• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

FUKE Shuro  福家 俊郎

ORCIDConnect your ORCID iD *help
… Alternative Names

FUKE Shunro  福家 俊郎

福家 俊郎  フケ シユンロウ

Less
Researcher Number 00022236
Other IDs
Affiliation (based on the past Project Information) *help 2006 – 2007: 静岡大学, 工学部, 教授
2000 – 2002: 静岡大学, 工学部, 教授
1990 – 1992: 静岡大学, 工学部, 教授
1987: 静岡大学, 工学部, 助教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Applied materials science/Crystal engineering / Applied materials science/Crystal engineering
Keywords
Principal Investigator
化合物半導体 / ヘテロ成長 / 減圧成長 / 混晶 / 不純物効果 / バッファ層 / High Quality / Dislocation Density / Organometallic Vapor Phase Epitax / Selective Growth … More / Nitride / Compound Semiconductor / 高品位化 / 高品位 / 転位密度 / 有機金属気相成長法 / 選択成長 / 窒化物 / SIMS分析 / 表面形態 / 格子歪緩和 … More
Except Principal Investigator
cross-hatched pattern / クロスハッチパターン / MOCVD / gallium phosphide / nano dot / optoelectronic integrated circuit / crystal growth / compound semiconductor / Si substrate / metalorganic vapor phase epitaxy / 有機金属気相成長法 / ガリウムリン / ナノドット / 光電子集積回路 / 結晶成長 / 化合物半導体 / シリコン基板 / 有機金属気相成長 / transmission electron microscopy / misoriented substrate / dislocation / gallium arsenic substrate / graded layer / indium gallium arsenic / TEM / 透過電子顕微鏡観察 / オフ基板 / 転位 / GaAs基板 / グレーデッド層 / InGaAs / III-V化合物半導体 / 気相成長 / 不純物ドーピング効果 / II-VI化合物半導体 / ヘテロエピタキシャル成長 Less
  • Research Projects

    (7 results)
  • Research Products

    (3 results)
  • Co-Researchers

    (3 People)
  •  Crystal of growth of compound semiconductor lattice-matched with Si substrate

    • Principal Investigator
      TAKANO Yasushi
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Shizuoka University
  •  Realization of homogeneous dislocation distribution in a buffer layer by self-organization

    • Principal Investigator
      TAKANO Yasushi
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Shizuoka University
  •  Improvement of GaN epi-layer quality and reduction of dislocation density by selective growth method using buried metalPrincipal Investigator

    • Principal Investigator
      FUKE Shunro
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Shizuoka Uhiversity
  •  化合物半導体薄膜結晶のヘテロ成長における結晶性の性御Principal Investigator

    • Principal Investigator
      福家 俊郎
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Shizuoka University
  •  化合物半導体薄膜結晶のヘテロ成長における結晶性の制御Principal Investigator

    • Principal Investigator
      福家 俊郎
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Shizuoka University
  •  化合物半導体薄膜結晶のヘテロ成長における結晶性の制御Principal Investigator

    • Principal Investigator
      福家 俊郎
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Shizuoka University
  •  H_2輸送法におけるII-VI化合物半導体結晶成長における不純物効果と成長機構の研究

    • Principal Investigator
      今井 哲二
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Shizuoka University

All 2008 2007 2006

All Presentation

  • [Presentation] Growth of flat GaP layer on Si substrates using MOVPE2008

    • Author(s)
      T. Okamoto, S. Watanabe, H. Masuda, K. Noda, S. Fukuda, S. Fuke, Y. Takano
    • Organizer
      The 55th Spring Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      College of Science and Technology, Nihon University
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] Initial growth of GaP layers on Si substrates by MOVPE2007

    • Author(s)
      S. Watanabe, K. Morizumi, S. Fuke, Y. Takano
    • Organizer
      The 54th Spring Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      Aoyama Gakuin University, Sagamihara Campus
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] Epitaxial growth of GaP layers on Si substrates by MOVPE2006

    • Author(s)
      S. Watanabe, K. Morizumi, S. Fuke, Y. Takano
    • Organizer
      The 67th Autumn Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      2006-08-31
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • 1.  TAKANO Yasushi (00197120)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 3 results
  • 2.  今井 哲二 (50143714)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 3.  SUMIYA Masatomo (20293607)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi