SEKIGUCHI Takashi 関口隆史

… Alternative Names

関口隆史

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Researcher Number	00179334
Other IDs
Affiliation (Current)	2025: 筑波大学, 数理物質系, 教授
Affiliation (based on the past Project Information) *help	2011: 物資・材料研究機構, 半導体材料センター, グループリーダー 2011: 物質・材料研究機構, グループリーダー 2009 – 2011: 物質・材料研究機構, 半導体材料センター, グループリーダー 2000: 東北大, 金属材料研究所, 助手 1999: 東北大学, 金属材料研究所, 助教授 … More 1997 – 1998: 東北大学, 金属材料研究所, 助手 1992 – 1993: 東北大学, 金属材料研究所, 助手 1986: 東北大学, 金属材料研究所, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials / Inorganic materials/Physical properties Except Principal Investigator Applied materials / Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator GaAs / InGaAs / ZnO / Cathodoluminescence / Si / InGaAsP / カソードルミネッセンス / bonded Si / Quantum wire / Quantum dots … More / nanostructure / Semiconductor / 量子ドット / Diamond / 量子構造 / 半導体 / SiGe / Hetero Structure / Strain / Band Gap / Alloy Semiconductors / 準安定状態 / ヘテロ構造 / 格子歪 / バンドギャップ / 混晶半導体 / 欠陥 / 結晶成長 / 重水 / FTIR / カソートルミネッセンス … More Except Principal Investigator 原子状水素 / 磁化分布 / 磁壁 / 磁区観察 / ローレンツ電子顕微鏡法 / 透過型走査電子顕微鏡 / 位相差電子顕微鏡法 / AlGaN / カソードルミネッセンス / フォトルミネッセンス / 発光 / 水蒸気プラズマ処理 / 水素プラズマ処理 / InGaN / 環境保全 / 水素 / 発光増大 / プラズマ処理 / 青色発光 / GaN系半導体 / 白色発光ダイオード / 照明 / 格子不整合 / MBE / 量子効率 / ホール測定 / 赤外受光素子 / 種結晶 / 鉄シリサイド / MOCVD / マイクロチャネルエピタキシー / 半導体シリサイド / 新機能材料 Less

Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors
- Principal Investigator
  
  SUEMASU Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tsukuba
Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices
- Principal Investigator
  
  KAMIURA Yoichi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Okayama University
同位元素添加単結晶を用いた電子スピン共鳴法と発光測定による酸化亜鉛の欠陥分析Principal Investigator
- Principal Investigator
  
  関口隆史
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Tohoku University
Characterization of Nano-electric Structure of Materials by Weak Excitation CathodoluminescencePrincipal Investigator
- Principal Investigator
  
  SEKIGUCHI Takashi
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  TOHOKU UNIVERSITY
Cathodoluminescence Study of the Locaal Fluctuation of Band Gaps in AlloySemiconductor FilmsPrincipal Investigator
- Principal Investigator
  
  SEKIGUCHI Takashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  TOHOKU UNIVERSITY
位相差電子顕微鏡による磁区観察法の開発
- Principal Investigator
  
  渡辺伝次郎
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  Applied materials
- Research Institution
  Tohoku University

All 2011 2010 Other

All Journal Article Presentation

[Journal Article] Minority-carrier diffusion length, minority-carrier lifetime and photoresponsivity in β-FeSi2 layers grown by molecular-beam epitaxy2011
- Author(s)
  K.Akutsu, H.Kawakami, M.Suzuno, T.Yaguchi, K.Jiptner, J.Chen, T.Sekiguchi, T.Ootsuka, T.Suemasu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 109 Issue: 12 Pages: 1-6
- DOI
  10.1063/1.3596565
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J03500, KAKENHI-PROJECT-21360002
[Journal Article] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC2011
- Author(s)
  H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Suemasu
- Journal Title
  
  Physics Procedia
  
  Volume: 11 Pages: 23-26
- DOI
  10.1016/j.phpro.2011.01.029
- Data Source
  KAKENHI-PROJECT-21360002
[Journal Article] Effect of introducing β-FeSi_2 template layers on the defect density and minority carrier diffusion length in Si nearby p-β-FeSi_2/n-Si heterointerface2011
- Author(s)
  H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 4R Pages: 1-4
- DOI
  10.1143/jjap.50.041303
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] Si基板上にエピ成長したβ-FeSi_2薄膜のSEM/EBSD/EBIC評価2011
- Author(s)
  カロリンイプトナー, 川上英輝, 陳君, 末益崇, 関口隆
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] Characterization of epitaxial β-FeSi_2 thin films on Si substrate by SEM, EBIC and EBSD imaging2011
- Author(s)
  K. Jiptner, H. Kawakami, J. Chen, T. Suemasu and T. Sekiguchi
- Organizer
  21st International Photovoltaic Science and Engineering Conference (PVSEC)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2011-11-01
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] MBE法によるSi基板へのβ-FeSi_2膜の成長とEBICによる拡散長評価2010
- Author(s)
  川上英輝, 鈴野光史, 阿久津恵一, 陳君, 殷福星, 関口隆史, 末益崇
- Organizer
  第57回応用物理学関係連合講演会
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] MBE法で形成したβ-FeSi_2膜のEBICによる拡散長評価2010
- Author(s)
  川上英輝, 鈴野光史, 阿久津恵一, 陳君, Karolin Jiptner, 関口隆史, 末益崇
- Organizer
  第71回応用物理学会学術講演会
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC2010
- Author(s)
  H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Suemasu
- Organizer
  APAC Silicide
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2010-07-24
- Data Source
  KAKENHI-PROJECT-21360002
[Presentation] Enhancement of photoresponsivity, minority-carrier diffusion length and lifetime in β-FeSi_2 films grown by atomic hydrogen-assisted molecular beam epitaxy
- Author(s)
  H. Kawakami, M. Suzuno, K. Akutsu, T. Yaguchi, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu
- Organizer
  Asian School-Conference on Physics and Technology of Nanostructured Materials
- Place of Presentation
  Vladivostok, Russia
- Data Source
  KAKENHI-PROJECT-21360002

1. SUEMASU Takashi (40282339)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
2. AKIYAMA Kensuke (70426360)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. KAMIURA Yoichi (30033244)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YAMASHITA Yoshifumi (80251354)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. ISHIYAMA Takeshi (40314653)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 末澤正志 (00005919)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 渡辺伝次郎 (50004239)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KITAZAWA Koichi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TOMIZAWA Jyun'ichiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 井上雅夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SEKIGUCHI Takashi 関口 隆史

関口 隆史

Research Projects

Research Products

Co-Researchers

Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

同位元素添加単結晶を用いた電子スピン共鳴法と発光測定による酸化亜鉛の欠陥分析Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Characterization of Nano-electric Structure of Materials by Weak Excitation CathodoluminescencePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Cathodoluminescence Study of the Locaal Fluctuation of Band Gaps in AlloySemiconductor FilmsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

位相差電子顕微鏡による磁区観察法の開発

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Minority-carrier diffusion length, minority-carrier lifetime and photoresponsivity in β-FeSi2 layers grown by molecular-beam epitaxy2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effect of introducing β-FeSi_2 template layers on the defect density and minority carrier diffusion length in Si nearby p-β-FeSi_2/n-Si heterointerface2011

Author(s)

Journal Title

DOI

Data Source

[Presentation] Si基板上にエピ成長したβ-FeSi_2薄膜のSEM/EBSD/EBIC評価2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Characterization of epitaxial β-FeSi_2 thin films on Si substrate by SEM, EBIC and EBSD imaging2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] MBE法によるSi基板へのβ-FeSi_2膜の成長とEBICによる拡散長評価2010

Author(s)

Organizer

Year and Date

Data Source

[Presentation] MBE法で形成したβ-FeSi_2膜のEBICによる拡散長評価2010

Author(s)

Organizer

Year and Date

Data Source

[Presentation] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC2010

Author(s)

SEKIGUCHI Takashi 関口隆史

関口隆史