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TAKANO Yasushi  高野 泰

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… Alternative Names

高野 泰  タカノ ヤスシ

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Researcher Number 00197120
Other IDs
Affiliation (Current) 2025: 静岡大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help 2007: Shizuoka University, Engineering, Associate professor
2006: 静岡大学, 工学部, 助教授
2000 – 2002: 静岡大学, 工学部, 助教授
1991 – 1993: 静岡大学, 工学部, 助教授
1989 – 1990: 豊橋技術科学大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Applied materials science/Crystal engineering
Except Principal Investigator
Electronic materials/Electric materials / 物理計測・光学 / 電子材料工学
Keywords
Principal Investigator
cross-hatched pattern / クロスハッチパターン / MOCVD / gallium phosphide / nano dot / optoelectronic integrated circuit / crystal growth / compound semiconductor / Si substrate / metalorganic vapor phase epitaxy … More / 有機金属気相成長法 / ガリウムリン / ナノドット / 光電子集積回路 / 結晶成長 / 化合物半導体 / シリコン基板 / 有機金属気相成長 / transmission electron microscopy / misoriented substrate / dislocation / gallium arsenic substrate / graded layer / indium gallium arsenic / TEM / 透過電子顕微鏡観察 / オフ基板 / 転位 / GaAs基板 / グレーデッド層 / InGaAs … More
Except Principal Investigator
ヘテロエピタキシャル成長 / シリコン基板上インジウムりん / シリコン基板上ガリウム砒素 / 集束イオンビーム / シリコン基板上アルミニウムりん / 分子線エピタキシー / 化合物半導体 / 光配線 / 自己組織化 / 結合重み / ニュ-ロデバイス / ゲルマニウム基板上ガリウム砒素 / 有機金属気相成長法 / High Quality / Dislocation Density / Organometallic Vapor Phase Epitax / Selective Growth / Nitride / Compound Semiconductor / 高品位化 / 高品位 / 転位密度 / 選択成長 / 窒化物 / GaAs on Si / Hetero-epitaxy / Optoelectronic Integrated Circuit / Self-Organization / Synaptic Connection / Variable Synaptic Weight / Neural Network / Neuro-device / アナログ重み / ニュ-ロン / 神経回路網 / ヘテロエピタキシ- / 光電子集積回路 / 可変シナプス結合重み / シナプス結合 / ニュ-ラルネットワ-ク / ゲルマニウム基板上ガリウム石比素 / シリコン基板上ガリウム石比素 / バッファ層 / 減圧成長 / 混晶 / ヘテロ成長 / 短周期超格子 / 教師有り学習 / 適応デバイス / ニュ-ロコンピュ-ティング / ガリウムりん基板上インジウムりん / ガリウム砒素基板上インジウムりん / 分子線エピタキシ- / 2段階成長法 / 分子線エピタキシ-法 / ガリウムひ素 / インジウムりん Less
  • Research Projects

    (10 results)
  • Research Products

    (6 results)
  • Co-Researchers

    (5 People)
  •  Crystal of growth of compound semiconductor lattice-matched with Si substratePrincipal Investigator

    • Principal Investigator
      TAKANO Yasushi
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Shizuoka University
  •  Realization of homogeneous dislocation distribution in a buffer layer by self-organizationPrincipal Investigator

    • Principal Investigator
      TAKANO Yasushi
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Shizuoka University
  •  Improvement of GaN epi-layer quality and reduction of dislocation density by selective growth method using buried metal

    • Principal Investigator
      FUKE Shunro
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Shizuoka Uhiversity
  •  化合物半導体-Si系ヘテロエピタキシーの初期原子層制御と転位低減化に関する研究

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体薄膜結晶のヘテロ成長における結晶性の性御

    • Principal Investigator
      FUKE Shunro
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Shizuoka University
  •  化合物半導体-Si系ヘテロエピタキシーの初期原子層制御と転位低減化に関する研究

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体ーSi系ヘテロエピタキシ-の初期原子層制御と転位低減化に関する研究

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  光電子ニュ-ロデバイスの研究

    • Principal Investigator
      米津 宏雄
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  InPーGaAsヘテロ系エピタキシャル成長の初期過程制御と高品質化に関する研究

    • Principal Investigator
      PAK Kangsa
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Toyohashi University of Technology
  •  Basic Research on Optoelectronic Devices for Neural Networks

    • Principal Investigator
      YONEZU Hiroo
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      物理計測・光学
    • Research Institution
      Toyohashi Institute of Technology

All 2008 2007 2006 Other

All Presentation

  • [Presentation] MOVPE法によるSi基板上平坦GaP成長2008

    • Author(s)
      岡本拓也、渡邉聖、高野泰, 他
    • Organizer
      題55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] Growth of flat GaP layer on Si substrates using MOVPE2008

    • Author(s)
      T. Okamoto, S. Watanabe, H. Masuda, K. Noda, S. Fukuda, S. Fuke, Y. Takano
    • Organizer
      The 55th Spring Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      College of Science and Technology, Nihon University
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] Initial growth of GaP layers on Si substrates by MOVPE2007

    • Author(s)
      S. Watanabe, K. Morizumi, S. Fuke, Y. Takano
    • Organizer
      The 54th Spring Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      Aoyama Gakuin University, Sagamihara Campus
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] Epitaxial growth of GaP layers on Si substrates by MOVPE2006

    • Author(s)
      S. Watanabe, K. Morizumi, S. Fuke, Y. Takano
    • Organizer
      The 67th Autumn Meeting ; The Japan Society of Applied Physics
    • Place of Presentation
      Ritsumeikan University
    • Year and Date
      2006-08-31
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] 「研究成果報告書概要(和文)」より

    • Author(s)
      高野泰, 他
    • Organizer
      題55回応用物理学関係連合講演会
    • Data Source
      KAKENHI-PROJECT-18560008
  • [Presentation] 「研究成果報告書概要(和文)」より

    • Author(s)
      高野泰, 他
    • Organizer
      題55回応用物理学関係連合講演会
    • Data Source
      KAKENHI-PROJECT-18560008
  • 1.  PAK Kangsa (10124736)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 2.  YONEZU Hiroo (90191668)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 3.  FUKE Shunro (00022236)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 3 results
  • 4.  SUMIYA Masatomo (20293607)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 5.  今井 哲二 (50143714)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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