EGAWA Takashi 江川孝志

… Alternative Names

江川孝志エガワタカシ

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Researcher Number	00232934
Other IDs
Affiliation (Current)	2025: 名古屋工業大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2012 – 2013: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2011: 名古屋工業大学, 工学研究科, 教授 2006 – 2008: Nagoya Institute of Technology, Graduate School of Engineering, Professor, 工学研究科, 教授 2005: 名古屋工業大学, 大学院工学研究科, 教授 2004: 名古屋工業大学, 大学院・工学研究科, 教授 … More 2003: 名古屋工業大学, 極微デバイス機能システム研究センター, 教授 1999 – 2002: Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Professor, 極微構造デバイス研究センター, 教授 1993 – 1998: 名古屋工業大学, 極微構造デバイス研究センター, 助教授 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Applied optics/Quantum optical engineering / Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials / Applied optics/Quantum optical engineering / エネルギー学一般・原子力学 / Science and Engineering
Keywords	Principal Investigator 有機金属気相成長法 / 有機金属気相成長 / MOCVD / 発光ダイオード / 量子井戸 / 面発光レーザー / Cavity / Si / LED / Multi quantum well … More / an / distributed Bragg reflector / Vertical cavity surface emitting laser / P型窒化ガリウム / n型窒化ガリウム / 束縛励起子 / 自由励起子 / InGaNダブルヘテロ構造 / AlGaN / 反射率 / クラック / 歪超格子 / 共振器 / シリコン / 多重量子井戸 / 窒化ガリウム / 分布型ブラッグ反射鏡 / 面発光型レーザー / 表面平坦性 / 成長速度 / CL / 暗点欠陥密度 / マイグレーション / AlGaN/GaN / HEMT / ノーマリオフ / 選択再成長 / GaN / 二次元電子ガス / ヘテロ接合 / ショットキーダイオード / 高電子移動度トランジスター / X線回折 / フォトルミネッセンス / 窒化物半導体 / 四元混晶半導体 / ヘテロ量子界面 / 半導体多層膜 / シリコン上面発光レーザー / 応力 / 転位 / 光・電子集積回路 / 半導体多層膜反射鏡 / AlGaP中間層 / AlGaAs / シリコン上レーザー … More Except Principal Investigator GaAs / GaN / 転位 / AlGaAs / Si基板 / 有機金属気相成長 / Si / opt-electronic integrated circuit / optical waveguide / porous silicon / 多孔性シリコン / 導波路 / 光電子集積回路 / 光導波路 / 多孔質シリコン / Si MESFET / Si electronic device / Si light emitting device / Si tandem solar cell / Si laser / GaN on Si substrate / GaAs on Si substrate / Heteroepitaxy / 直列抵抗 / 発光ダイオード(LED) / GaN中間層 / AlGaN / 有機金属気相成長(MOCVD) / エピタキシャルリフトオフ(ELO) / Si上ヘテロエピタキシー / Si上タンデム太陽電池 / Si上LED / Si上レーザー / GaAs on Si / Si上のヘテロエピタキシー / 転位の不活性化 / 高効率Si上タンデム太陽電池 / Si上青・緑色LED / 大面積Si上GaN基板 / GaN on Si / CaAs on Si / シリコン上化合物半導体 / Quantum well structure / Self-formed / Dislocation / Laser on Si / Lifetest / Island / Metalorganic chemical vapor deposition / Droplet epitaxy / シリコン上ガリウム砒素 / 有機金属気相成長法 / 熱処理 / 量子井戸レーザー / 寿命 / ピニング効果 / 暗線欠陥 / 量子井戸構造 / 自己形成 / シリコン上レーザー / 寿命試験 / 島状結晶 / ドロップレット / minority carrier lifetime / stress / dislocation / thermal cycle annealing / Si substrate / tandem solar cell / III-V on Si / 応力緩和 / 転位低減 / レーザ照射 / GaAs-on-Si / タイデム太陽電池 / 3端子出力 / 少数キャリア寿命 / 応力 / 熱サイクルアニール / タンデム太陽電池 / プラズマパッシベーション / GaInN LED / 量子ドットレーザ / GaAs系レーザ / 多波長発光素子 / 多層膜反射鏡 / 欠陥不活性化 / ウエハ接着 / Si基板上GaN / Si基板上GaAs / 半導体レーザ / 発光ダイオード / ヘテロエピタキシ Less

Study on GaN-based normally-off device on Si substrate using selective area growthPrincipal Investigator
- Principal Investigator
  
  EGAWA Takashi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
Study on quaternary GaN-based optoelectronic devices on large diameter Si substratePrincipal Investigator
- Principal Investigator
  
  EGAWA Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
Research on Fundamentals of Opt-Electronic Integral Circuit on Silicon Substrate
- Principal Investigator
  
  JIMBO Takashi, 邵春林
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
多波長光デバイス集積化のための異種材料一体化技術
- Principal Investigator
  
  神保孝志
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya Institute of Technology
Heteroepitaxy of GaAs and GaN on Si and their device applications
- Principal Investigator
  
  UMENO Masayoshi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  CHUBU UNIVERSITY
  Nagoya Institute of Technology
Study on GaN-based blue vertical cavity surface emitting laser on SiPrincipal Investigator
- Principal Investigator
  
  EGAWA Takashi
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Nagoya Institute of Technology
シリコン基板上の室温連続発振面発光レーザーに関する研究Principal Investigator
- Principal Investigator
  
  江川孝志
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Nagoya Institute of Technology
Studies on high-efficiency and low-cost compound semiconductor/Si tandem solar cell
- Principal Investigator
  
  UMENO Masayoshi
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  エネルギー学一般・原子力学
- Research Institution
  Nagoya Institute of Technology
Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate
- Principal Investigator
  
  UMENO Masayoshi
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Nagoya Institute of Technology
選択成長法を用いたシリコン基板上の面発光レーザーに関する研究Principal Investigator
- Principal Investigator
  
  江川孝志
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology

All 2014 2013 2012 2011 2008 2007 2006

All Journal Article Presentation Book Patent

[Book] 技術シーズを活用した研究開発テーマの発掘2013
- Author(s)
  江川孝志, 他
- Total Pages
  854
- Publisher
  技術情報協会
- Data Source
  KAKENHI-PROJECT-23360154
[Book] 高周波半導体材料・デバイスの新展開2006
- Author(s)
  江川孝志, 他26名
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] High Drain Current Density E-Mode Al_2O_3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×10^<8> V^<2>Ω^<-1>cm^<-2>)2013
- Author(s)
  J. J. Freedsman, T. Kubo, T. Egawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: Vol. 60, No. 10 Pages: 3079-3083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence2013
- Author(s)
  A. F. Wilson, A. Wakejima, T. Egawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: Vol. 6
- NAID
  10031174343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon w　ith Buffer Thickness Dependence2013
- Author(s)
  A. F. Wilson, A. Wakejima, T. Egawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 6
- NAID
  10031174343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×108 V2Ω-1cm-2)2013
- Author(s)
  J. J. Freedsman, T. Kubo, T. Egawa
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 60 Pages: 3079-3083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias2013
- Author(s)
  A. F. Wilson, A. Wakejima, T. Egawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: Vol. 6
- NAID
  10031193080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Origin and Appearance of Defective Pits in the Gate-Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si2013
- Author(s)
  A. F. Wilson, A. Wakejima, T. Egawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: Vol. 6
- NAID
  40019884090
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers2012
- Author(s)
  J. J. Freedsman, T. Kubo and T. Egawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101 Issue: 1
- DOI
  10.1063/1.4733359
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate2012
- Author(s)
  S. L. Selvaraj, A. Watanabe, A. Wakejima and T. Egawa
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 33 Issue: 10 Pages: 1375-1377
- DOI
  10.1109/led.2012.2207367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers2012
- Author(s)
  J. J. Freedsman, T. Kubo, T. Egawa
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol. 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate2012
- Author(s)
  S. L. Selvaraj, A. Watanabe, A. Wakejima, T. Egawa
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: Vol. 33, No. 10 Pages: 1375-1377
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Si基板上AlGaN/GaNヘテロ構造に関する研究2011
- Author(s)
  江川孝志
- Journal Title
  
  J.Vac.Soc.Jpn.
  
  Volume: 54巻 Pages: 47-51
- NAID
  10029319310
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate2011
- Author(s)
  S. L. Selvaraj, A. Watanabe, T. Egawa
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol. 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate2011
- Author(s)
  S.L.Selvaraj, A.Watanabe, T.Egawa
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98巻 Issue: 25
- DOI
  10.1063/1.3602919
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si2011
- Author(s)
  I.B.Rowena, S.L.Selvaraj, T.Egawa
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: 32巻 Issue: 11 Pages: 1534-1536
- DOI
  10.1109/led.2011.2166052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si2011
- Author(s)
  I. B. Rowena, S. L. Selvaraj, T. Egawa
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: Vol. 32, No. 11 Pages: 1534-1536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360154
[Journal Article] Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPE2008
- Author(s)
  T. Ito, Y. Nomura, S. L. Selvaraj and T. Egawa
- Journal Title
  
  J. Crystal Growth Vol.310
  
  Pages: 4896-4899
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes2008
- Author(s)
  J. C. Zhang, Y. H. Zhu, T. Egawa, S.Sumita, M. Miyoshi and M. Tanaka
- Journal Title
  
  Appl. Phys. Lett. Vol.92, No.19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] AlInN-based ultraviolet photodiode grwon by metal organic chemical vapor deposition2008
- Author(s)
  S. Senda, H. Jiang and T. Egawa
- Journal Title
  
  Appl. Phys. Lett. Vol.92, No.20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Trap states in n-GaN grown on AlN/sapphire template by MOVPE2008
- Author(s)
  T. Ito, M. Yoshikawa, A. Watanabe andT. Egawa
- Journal Title
  
  phys. Stat. Sol. (c)5, No.9
  
  Pages: 2998-3000
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates2008
- Author(s)
  K. Orita, Y. Takase, Y. Fukushima, M. Usuda, T. Ueda, S. Takigawa, T. Tanaka, D. Ueda and T. Egawa
- Journal Title
  
  IEEE J. Quantum Electronics Vol.44, No.10
  
  Pages: 984-989
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] AlN/AlGaN/GaN MIS-HEMTs with recessed source/drain Ohmic contact2008
- Author(s)
  S. L. Selvaraj, T. Ito, Y. Terada and T. Egawa
- Journal Title
  
  phys. Stat. Sol. (c)5, No.9
  
  Pages: 2988-2990
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures2008
- Author(s)
  M. Miyoshi, Y. Kuraoka, M. Tanaka and T. Egawa
- Journal Title
  
  Applied Physics Express Vol.1, No.8
- NAID
  10025081817
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emittng diodes2007
- Author(s)
  J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi and M. Tanaka
- Journal Title
  
  ,Appl. Phys. Lett. Vol.91, No.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics2007
- Author(s)
  S. L. Selvaraj, T. Ito, Y. Terada and T. Egawa
- Journal Title
  
  Appl. Phys. Lett. Vol.90, No.17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN/GaN high-electron-mobility transistors on 4 in. silicon2006
- Author(s)
  S. L. Selvaraj, T. Egawa
- Journal Title
  
  Appl. Phys. Lett. Vol.89, No.19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Al composition dependent properties of quaternary AlInGaN Schottky diodes2006
- Author(s)
  Y.Liu, H.Jiang, T.Egawa, B.Zhang, H.Ishikawa
- Journal Title
  
  J. Appl. Phys Vo1.99, No.12
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate2006
- Author(s)
  Y. Liu, T. Egawa H. Jiang, B. Zhang and H. Ishikawa
- Journal Title
  
  Jpn. J. Appl. Phys Vol.45, No.7
  
  Pages: 5728-5731
- NAID
  10017999632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Novel Quaternary A1InGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate2006
- Author(s)
  Y.Liu, T.Egawa H.Jiang, B.Zhang, H.Ishikawa
- Journal Title
  
  Jpn. J. Appl. Phys Vol.45, No.7
  
  Pages: 5728-5731
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Al composition dependent properties of quaternary AlInGaN Schottky diodes2006
- Author(s)
  Y. Liu, H. Jiang, T. Egawa, B. Zhang and H. Ishikawa
- Journal Title
  
  J. Appl. Phys Vol.99, No.12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Patent] ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のＭＩＳ型ノーマリオフＨＥＭＴ素子2014
- Inventor(s)
  江川孝志
- Industrial Property Rights Holder
  江川孝志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-067737
- Filing Date
  2014-03-28
- Data Source
  KAKENHI-PROJECT-23360154
[Patent] ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のMIS型ノーマリオフHEMT素子2014
- Inventor(s)
  江川孝志
- Industrial Property Rights Holder
  名古屋工業大学, 高橋実
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-067737
- Filing Date
  2014-03-28
- Data Source
  KAKENHI-PROJECT-23360154
[Patent] 半導体素子およびその製造方法2012
- Inventor(s)
  江川孝志, 小田修
- Industrial Property Rights Holder
  名古屋工業大学, 高橋実
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-052987
- Filing Date
  2012-03-09
- Data Source
  KAKENHI-PROJECT-23360154
[Patent] 半導体積層構造およびこれを用いた半導体素子2012
- Inventor(s)
  江川孝志
- Industrial Property Rights Holder
  名古屋工業大学, 高橋実
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-135627
- Filing Date
  2012-06-15
- Data Source
  KAKENHI-PROJECT-23360154
[Patent] 半導体積層構造およびこれを用いた半導体素子2012
- Inventor(s)
  江川孝志
- Industrial Property Rights Holder
  名古屋工業大学, 高橋実
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-162720
- Filing Date
  2012-07-23
- Data Source
  KAKENHI-PROJECT-23360154
[Patent] 半導体装置およびその製造方法2008
- Inventor(s)
  江川孝志、山本信幸、杉本重幸
- Industrial Property Rights Holder
  国立大学法人名古屋工業大学、中部電力株式会社
- Industrial Property Number
  2008-178786
- Filing Date
  2008-07-09
- Overseas
- Data Source
  KAKENHI-PROJECT-18360169
[Patent] 発光素子2007
- Inventor(s)
  江川孝志、角谷茂明、柴田智彦、三好実人、田中光浩
- Industrial Property Rights Holder
  国立大学法人名古屋工業大学、日本ガイシ(株)
- Industrial Property Number
  2007-002511
- Filing Date
  2007-01-10
- Overseas
- Data Source
  KAKENHI-PROJECT-18360169
[Patent] 発光素子2006
- Inventor(s)
  江川孝志、伊藤統夫
- Industrial Property Rights Holder
  国立大学法人名古屋工業大学、同和鉱業(株)
- Industrial Property Number
  2006-209136
- Filing Date
  2006-07-31
- Overseas
- Data Source
  KAKENHI-PROJECT-18360169
[Presentation] Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode2013
- Author(s)
  T. Narita, Y. Fujimoto, A. Wakejima and T. Egawa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Demonstration of Enhancement-mode Operation in AlGaN/GaN MOS-HEMT on Si by utilizing ALD Al2O3 layer2013
- Author(s)
  J. J. Freedsman, T. Kubo and T. Egawa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode2013
- Author(s)
  T. Narita, Y. Fujimoto, A. Wakejima, T. Egawa
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  ヒルトン福岡シーホーク
- Year and Date
  2013-09-27
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 2000mm Si (111) Substrate2013
- Author(s)
  T. Egawa
- Organizer
  35th IEEE Compound Semiconductor IC (CSIC) Symposium
- Place of Presentation
  モントレー
- Year and Date
  2013-10-14
- Invited
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 2000mm Si (111) Substrate2013
- Author(s)
  T. Egawa
- Organizer
  35th IEEE Compound Semiconductor IC Symposium
- Place of Presentation
  米国
- Invited
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] GaN Based MIS-Type HEMT Devices Grown by MOCVD on Si2013
- Author(s)
  J. J. Freedsman, T. Egawa
- Organizer
  International Conference on Thin Films & Applications
- Place of Presentation
  インド
- Year and Date
  2013-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Demonstration of Enhancement-mode Operation in AlGaN/GaN MOS-HEMT on Si by utilizing ALD Al2O3 layer2013
- Author(s)
  J. J. Freedsman, T. Kubo, T. Egawa
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  ヒルトン福岡シーホーク,口頭発表
- Year and Date
  2013-09-25
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Investigation of trapping properties in AlGaN/GaN HEMT heterostructures grown on silicon with thick buffer layers2012
- Author(s)
  J. J. Freedsman, T. Kubo and T. Egawa
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Investigation of trapping properties in AlGaN/GaN HEMT heterostructures grown on silicon with thick buffer layers2012
- Author(s)
  J. J. Freedsman, T. Kubo, T. Egawa
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都,ポスター
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Effect of Buffer Thickness on Degradation of AlGaN/GaN HEMTs on Si2012
- Author(s)
  W. A. Frank, A. Wakejima, T. Egawa
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si2012
- Author(s)
  T. Egawa
- Organizer
  2012 IEEE International Electron Devices Meeting
- Place of Presentation
  サンフランシスコ
- Year and Date
  2012-12-12
- Invited
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] 1.4 kV Breakdown Voltgae for MOCVD grown AlGaN/GaN HEMTs on Si Substrate2012
- Author(s)
  S. L. Selvaraj, A. Watanabe, A. Wakejima and T. Egawa
- Organizer
  Device research conference
- Place of Presentation
  ペンシルベニア州立大学
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] 1.4 kV Breakdown Voltgae for MOCVD grown AlGaN/GaN HEMTs on Si Substrate2012
- Author(s)
  S. L. Selvaraj, A. Watanabe, A. Wakejima, T. Egawa
- Organizer
  Device research conference
- Place of Presentation
  ペンシルベニア州立大学,ポスター
- Year and Date
  2012-06-18
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] MOCVD grown AlGaN/GaN transistors on Si substrate for High Breakdown Applications2011
- Author(s)
  S.L.Selvaraj, T.Egawa
- Organizer
  HeteroSiC-WASMPE 2011
- Place of Presentation
  Tours(フランス)(招待講演)
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate2011
- Author(s)
  S. L. Selvaraj, A. Watanabe, T. Egawa
- Organizer
  Device research conference
- Place of Presentation
  カリフォルニア州・サンタバーバラ
- Year and Date
  2011-06-21
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Deep Pits and Their Influence on the Device Performance for MOCVD Grown AlGaN/GaN HEMTS on Si Substrate2011
- Author(s)
  S. L. Selvaraj, A, Watanabe, T. Egawa
- Organizer
  9th International Conference on Nitride Semiconductors ( ICNS-9 )
- Place of Presentation
  イギリス, グラスゴー
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate2011
- Author(s)
  S.L.Selvaraj, A.Watanabe, T.Egawa
- Organizer
  Device research conference
- Place of Presentation
  サンタバーバラ(米国)
- Year and Date
  2011-06-21
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] MOCVD grown AlGaN/GaN transistors on Si substrate for High Breakdown Applications2011
- Author(s)
  S. L. Selvaraj, T. Egawa
- Organizer
  HeteroSiC-WASMPE 2011 (HeteroSiC-Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications 2011)
- Place of Presentation
  Toursフランス
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] Deep Pits and Their Influence on the Device Performance for MOCVD Grown AlGaN/GaN HEMTS on Si Substrate2011
- Author(s)
  L.Selvaraj, A, Watanabe, T.Egawa
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23360154
[Presentation] GaN-Based LEDs Grown on Si by MOCVD2008
- Author(s)
  T. Egawa
- Organizer
  Materials research society (MRS) spring meeting
- Place of Presentation
  サンフランシスコ
- Year and Date
  2008-03-26
- Data Source
  KAKENHI-PROJECT-18360169
[Presentation] Present status of MQW InGaN-based LED on Si substrate2007
- Author(s)
  T. Egawa
- Organizer
  First International Conference on White LEDs and Solid State Lighting
- Place of Presentation
  東京
- Year and Date
  2007-11-28
- Data Source
  KAKENHI-PROJECT-18360169
[Presentation] Highly Efficient GaN-Based LEDs with Photonic Crystals Replicated from Patterned Si Substrates2006
- Author(s)
  T. Egawa
- Organizer
  2006 IEEE International Electron Devices Meeting
- Place of Presentation
  サンフランシスコ
- Year and Date
  2006-12-13
- Data Source
  KAKENHI-PROJECT-18360169
[Presentation] Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate2006
- Author(s)
  T. Egawa
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  京都
- Year and Date
  2006-10-23
- Data Source
  KAKENHI-PROJECT-18360169

1. JIMBO Takashi (80093087)

# of Collaborated Projects: 10 results

# of Collaborated Products: 0 results
2. UMENO Masayoshi (90023077)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
3. ISHIKAWA Hiroyasu (20303696)

# of Collaborated Projects: 5 results

# of Collaborated Products: 4 results
4. SOGA Tetsuo (20197007)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. SHAO Chunlin (20242828)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. 林靖彦 (50314084)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. IDO Toshiyuki (60023256)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. WAKITA Kouichi (20301640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. MATSUMOTO Koh

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

EGAWA Takashi 江川 孝志

江川 孝志 エガワ タカシ

Research Projects

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Co-Researchers

Study on GaN-based normally-off device on Si substrate using selective area growthPrincipal Investigator

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Study on quaternary GaN-based optoelectronic devices on large diameter Si substratePrincipal Investigator

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Research on Fundamentals of Opt-Electronic Integral Circuit on Silicon Substrate

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多波長光デバイス集積化のための異種材料一体化技術

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Review Section

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Heteroepitaxy of GaAs and GaN on Si and their device applications

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Study on GaN-based blue vertical cavity surface emitting laser on SiPrincipal Investigator

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シリコン基板上の室温連続発振面発光レーザーに関する研究Principal Investigator

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Studies on high-efficiency and low-cost compound semiconductor/Si tandem solar cell

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Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate

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選択成長法を用いたシリコン基板上の面発光レーザーに関する研究Principal Investigator

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[Book] 技術シーズを活用した研究開発テーマの発掘2013

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[Book] 高周波半導体材料・デバイスの新展開2006

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[Journal Article] High Drain Current Density E-Mode Al_2O_3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×10^<8> V^<2>Ω^<-1>cm^<-2>)2013

Author(s)

Journal Title

Data Source

[Journal Article] Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence2013

Author(s)

EGAWA Takashi 江川孝志

江川孝志エガワタカシ

[Journal Article] Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon w　ith Buffer Thickness Dependence2013