SUSAKI Wataru 須崎渉

Researcher Number	00268294
Affiliation (based on the past Project Information) *help	2003 – 2007: 大阪電気通信大学, 工学部, 教授 1998 – 1999: 大阪電気通信大学, 工学部, 教授 1997: Osaka Electro-Communication Univ., Electronics, Prof. ('95), 工学部・電子工学科, 教授 1995 – 1996: 大阪電気通信大学, 工学部, 教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment / Applied materials science/Crystal engineering
Keywords	Principal Investigator MBE / AlInAs / superlattice / InGaSb / InAs / GaSb / Type II / InGaAs / Infrared / Cascade laser … More / InP substrate / AlGaAsSb barrier layer / InGaAs super lattice / Miniband Transition / Super lattice laser / ミニバンド間遷移 / 赤外 / カスケードレーザ / InP基板 / AlGaAsSb障壁層 / InGaAs超格子 / ミニバンド遷移 / 超格子レーザ / doping / MBE with a water cooling System / infrared semiconductor laser / Type II bandstructure / Type I band structure / AlGaSb / InGaSb) / (InAs / quantum well / InGaAsSb / AlGaAsSb / GaSb based infrared laser / TypeII / ドーピング / 超格子 / 水冷式分子線成長法 / 赤外半導体レーザ / multiple reflecting film / diffusion / disorder / surface emitting / strained quantum well / heterostructure / micro laser / 多重反射膜 / 拡散 / ディスオーダ / 面発光 / 歪量子井戸 / ヘテロ構造 / マイクロレーザ … More Except Principal Investigator 4H-SiC / GaN / InGaN / GaP / InP / GaAs / InAs / radiation-resistance / semi-insulating semiconductor / silicon drift detector / X-ray fluorescence / X-ray detector / 耐放射線性 / 半絶縁性半導体 / Silicon Drift Detector / 蛍光X線 / X線検出素子 / Disordered superlattice / Properties of quantum optoelectronics / Self-formed quantum dot / 発光デバイス / 自己形成 / 量子構造 / 光励起発光 / 走査型トンネル顕微鏡 / キャリア局在 / 不規則量子構造 / 自己形成量ドット / InGaN相分離 / プラズマ励起InGaN成長 / プラズマ励起GaN成長 / GaN成長 / GaAs量子構造 / 不規則超格子 / 光量子物性 / 自然形成量子ドット Less

Investigation of high energy X-ray detectors to detect a trace of pollutant capable of operating at room temperature
- Principal Investigator
  
  MATSUURA Hideharu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Electro-Communication University
Infrared Semiconductor Laser by Subband Transition at 3μmwavelength BandPrincipal Investigator
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Electro-Communication University
室温動作赤外半導体レーザの長波長化に関する研究Principal Investigator
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Electro-Communication University
Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro LasersPrincipal Investigator
- Principal Investigator
  
  SUSAKI Wataru
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Electro-Communication University
Light-Emitting Devices with Self-Formation Disordered Quantum Dots
- Principal Investigator
  
  SASAKI Akio
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Electro-Communication University
  Kyoto University

All 2006 2005 2004 2003

All Journal Article

[Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2006
- Author(s)
  W.Susaki, S.Ukawa, M.Tanaka
- Journal Title
  
  physica stat.(c) 3
  
  Pages: 683-687
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2006
- Author(s)
  田中将士, 須崎渉
- Journal Title
  
  第53回応用物理学関係連合講演会講演予稿集
  
  Pages: 1224-1224
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2005
- Author(s)
  Wataru Susaki, Soichiro Ukawa, Masashi Tanaka
- Journal Title
  
  Extended Abst.t of 32^<nd> International Symposium on Compound Semiconductors, WeP17, Rust, German September, 2005. (to be published in Physica solidus state (a))
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2005
- Author(s)
  田中将士, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Spontaneous Recombination lifetime in Compressively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005
- Author(s)
  Masashi Tanaka, Wataru Susaki
- Journal Title
  
  Proc.EXTENDED ABSTRACTS OF THE 24th ELECTRONIC MATERIALS SYMPOSIUM (Matsuyama)
  
  Pages: 213-216
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005
- Author(s)
  釣田隆弘, 田中将士, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演予稿集
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザーのキャリヤ再結合寿命2005
- Author(s)
  田中将士, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演予稿集
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計2005
- Author(s)
  吉見哲生, 田中将士, 釣田隆弘, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] 自己励起ラマン散乱法によるサブバンド準位の解析2005
- Author(s)
  角田慎一, 釣田隆弘, 宇川聡一郎, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Spontaneous Recombination Lifetime in Complessively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005
- Author(s)
  M.Tanaka, W.Susaki
- Journal Title
  
  Ext.Abs.24th Electronic Materials Symposium
  
  Pages: 213-216
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005
- Author(s)
  釣田隆弘, 田中将士, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計2005
- Author(s)
  吉見哲生, 田中将士, 釣田隆弘, 須崎渉
- Journal Title
  
  平成17年電気関係学会関西支部連合大会講演予稿集
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Spontaneous Recombination Lifetime in Complessively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005
- Author(s)
  M.Tanaka, W.Susaki
- Journal Title
  
  Ext. Abs. 24^<th> Electronic Materials Symposium
  
  Pages: 213-216
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering at 300K2004
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno
- Journal Title
  
  Prooc. Sino-Japan Joint Meeting on Optical Science and Electromagnetic Theory(OFSET)
  
  Pages: 210-213
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Dependence of Band-Offset on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004
- Author(s)
  K.Hayakawa, T.Natsuhara, Xiang Gao, T.Uetsuji, W.Susaki
- Journal Title
  
  Proc. 31st International Stymposium on Compound Semiconductors
  
  Pages: 9-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔2〕2004
- Author(s)
  釣田隆弘, 百合誠志, 須崎渉
- Journal Title
  
  平成16年度電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2004
- Author(s)
  Wataru Susaki, Soichiro Ukawa, Satoshi Yokota, Nobuhito Ohno
- Journal Title
  
  Physica E 21
  
  Pages: 793-797
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Band-Offset Energy Dependence on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004
- Author(s)
  W.Susaki, K.Hayakawa, Xiang Gao, T.Natsuhara, T.Uetsuji
- Journal Title
  
  Proc.2004 International Conference on Molecular Beam Epitaxy
  
  Pages: 27-28
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Dependence of Band-Offset on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004
- Author(s)
  K.Hayakawa, T.Natsuhara, Xiang Gao, T.Uetsuji, W.Susaki
- Journal Title
  
  Proc.31^<st> International Symposium on Compound Semiconductors
  
  Pages: 9-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering at 300K2004
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno
- Journal Title
  
  Proc.Sino-Japan Joint Meeting on Optical Science and Electromagnetic Theory (OFSET)
  
  Pages: 210-213
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Band-Offset Energy Dependence on Sb Content in AlGaAs/GaAsSb Quantum Wells Grown on GaAs by MBE2004
- Author(s)
  W.Susaki, K.Hayakawa, Xiang Gao, T.Natsuhara, T.Uetsuji
- Journal Title
  
  Proc. 2004 International Conference on Molecular Beam Epitaxy
  
  Pages: 27-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Spontaneous Recombination Lifetime in complessively Strained InGaAs and InGaP quantum well lasers grown on GaAs substrates2004
- Author(s)
  W.Susaki, T.Ohashi, S.Yuri
- Journal Title
  
  Proc. 31st International Symposium on Compound Semiconductors
  
  Pages: 95-99
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Spontaneous recombination Lifetime in complessively Strained InGaAs and InGaP quantum well lasers grown on GaAs substrates2004
- Author(s)
  W.Susaki, T.Ohashi, S.Yuri
- Journal Title
  
  Proc.31^<st> International Symposium on Compound Semiconductors
  
  Pages: 95-99
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] サブバンド間遷移による超格子カスケードレーザの設計〔1〕2004
- Author(s)
  百合誠志, 釣田隆弘, 須崎渉
- Journal Title
  
  平成16年度電気関係学会関西支部連合大会講演論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
- Journal Title
  
  Ext.Abst. 2003 International Symposium on Compound Semiconductors
  
  Pages: 157-158
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
- Journal Title
  
  Ext. Abs. 22nd Electronic Materials Symposium
  
  Pages: 253-256
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Fabrication of the InGaAsSb/AlGaAs/AlGaAsSb quantum well for the 2μm wavelength lasers by MBE2003
- Author(s)
  K.Hamahara, Xiang Gao, M.Segawa, W.Susaki
- Journal Title
  
  Ext.Abs.22nd Electronic Materials Symposium
  
  Pages: 133-134
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] MBE fabrication of quantum well for 1.3μm GaAsSb/AlGaAs laser on GaAs by substrate temperature control2003
- Author(s)
  K.Hayakawa, T.Uetsuji, Xiang Gao, W.Susaki
- Journal Title
  
  Ext.Abs.22nd Electronic Materials Symposium
  
  Pages: 135-136
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] MBE fabrication of quantum well for 1.3μm GaAsSb/AlGaAs laser on GaAs by substrate temperature control2003
- Author(s)
  K.Hayakawa, T.Uetsuji, Xiang Gao, W.Susaki
- Journal Title
  
  Ext.Abs. 22nd Electronic Materials Symposium
  
  Pages: 135-136
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
- Journal Title
  
  Ext.Abs.22nd Electronic Materials Symposium
  
  Pages: 253-256
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Fabrication of the InGaAsSb/AlGaAs/AlGaAsSb quantum well for the 2μm wavelength lasers by MBE2003
- Author(s)
  K.Hamahara, Xiang.Gao, M.Segawa, W.Susaki
- Journal Title
  
  Ext. Abs. 22nd Electronic Materials Symposium
  
  Pages: 133-134
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360196
[Journal Article] Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering2003
- Author(s)
  W.Susaki, S.Ukawa, N.Ohno, H.Takeuchi, Y.Yamamoto, R.Hattori, A.Shima, Y.Mihashi
- Journal Title
  
  Ext.Abst.2003 International Symposium on Compound Semiconductors
  
  Pages: 157-158
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360196

1. MATSUURA Hideharu (60278588)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. SASAKI Akio (10025900)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. WAKAHARA Akihiro (00230912)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SHIBATA Noboru (90076836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. OHNO Nobuhito (20194251)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. TOMIOKA Akihiro (10211400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TANIGUCHI Kazuo (50076832)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. HAYAFUJI Norio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SUSAKI Wataru 須崎 渉

Research Projects

Research Products

Co-Researchers

Investigation of high energy X-ray detectors to detect a trace of pollutant capable of operating at room temperature

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Infrared Semiconductor Laser by Subband Transition at 3μmwavelength BandPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

室温動作赤外半導体レーザの長波長化に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro LasersPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Light-Emitting Devices with Self-Formation Disordered Quantum Dots

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2006

Author(s)

Journal Title

Data Source

[Journal Article] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs2005

Author(s)

Journal Title

Data Source

[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Spontaneous Recombination lifetime in Compressively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005

Author(s)

Journal Title

Data Source

[Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005

Author(s)

Journal Title

Data Source

[Journal Article] GaAs基板InGaAs圧縮歪量子井戸レーザーのキャリヤ再結合寿命2005

Author(s)

Journal Title

Data Source

[Journal Article] AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] 自己励起ラマン散乱法によるサブバンド準位の解析2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Spontaneous Recombination Lifetime in Complessively Strained InGaAs Quantum Well Lasers with InGaAsP and GaAs Barrier/Waveguide Layers2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] 3μm帯Injectorless Quantum-Cascade Laserの設計2005

SUSAKI Wataru 須崎渉