Kajikawa Yasutomo 梶川靖友

… Alternative Names

KAJIKAWA Yasutomo 梶川靖友

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Researcher Number	00294364
Other IDs
Affiliation (Current)	2025: 島根大学, その他部局等, 名誉教授
Affiliation (based on the past Project Information) *help	2005 – 2006: 島根大学, 総合理工学部, 助教授 1998 – 2000: 島根大学, 総合理工学部, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials
Keywords	Principal Investigator 分子線エピタキシー / 化合物半導体 / Annealing / Secondary Ion Mass Spectroscopy / X-ray diffraction / Molecular Beam Epitaxy / III-V Compound Semiconductor / 赤外分光 / 熱処理 / 二次イオン質量分析 … More / X線回折測定 / III-V族化合物半導体 / OPTICAL DEVICE / OPTICAL COMMUNICATION / CRYSTAL GROWTH / ALLOYED CRYSTAL / MOLECULAR BEAM EPITAXY / LASER DIODE / COMPOUND SEMICONDUCTOR / レーザーダイオード / 光デバイス / 光通信 / 結晶成長 / 混晶 / レーザダイオード Less

Research on materials for infrared semiconductor lasers used for detecting pollution gasesPrincipal Investigator
- Principal Investigator
  
  KAJIKAWA Yasutomo
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Shimane University
LONG-WAVELENGTH SEMICONDUCTOR LASERS FABRICATED ON GaAs SUBSTRATES USING NEW III-V ALLOYSPrincipal Investigator
- Principal Investigator
  
  KAJIKAWA Yasutomo
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  SHIMANE UNIVERSITY

All 2007 2006

All Journal Article

[Journal Article] Thallium incorporation during TlInAs growth by low-temperature MBE2007
- Author(s)
  M.Takushima, N.Kobayashi, Y.Yamashita, Y.Kajikawa, Y.Satou, Y.Tanaka, N.Sumida
- Journal Title
  
  Journal of Crystal Growth vol.301-302
  
  Pages: 117-120
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE2007
- Author(s)
  K.Ohnishi, T.Kanda, H.Kiriyama, Y.Kajikawa
- Journal Title
  
  Journal of Crystal Growth vol.301-302
  
  Pages: 113-116
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Thallium incorporation during TlInAs growth by low-temperature MBE2007
- Author(s)
  M.Takushima, N.Kobayashi, Y.Yamashita, Y.Kajikawa, Y.Satou, Y.Tanaka, N.Sumida
- Journal Title
  
  Journal of Crystal Growth vol.301-3021
  
  Pages: 117-120
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Properties of low-temperature grown InAs and their changes upon annealing2007
- Author(s)
  M.Shiba, R.Ikariyama, M.Takushima, Y.Kajikawa
- Journal Title
  
  Journal of Crystal Growth Vol.301-302
  
  Pages: 256-259
- NAID
  120005587463
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Properties of low-temperature grown InAs and their changes upon annealing2007
- Author(s)
  M.Shiba, R.Ikariyama, M.Takushima, Y.Kajikawa
- Journal Title
  
  Journal of Crystal Growth vol.301-302
  
  Pages: 256-259
- NAID
  120005587463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Effect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006
- Author(s)
  Y.Kajikawa, N.Nishimoto, D.Fujioka, K.Ichida
- Journal Title
  
  Japanese Journal of Applied Physics vol.45
  
  Pages: 2412-2416
- NAID
  40007227439
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy2006
- Author(s)
  梶川靖友, 小林信裕, 寺崎博喜
- Journal Title
  
  Materials Science and Engineering B 126
  
  Pages: 86-92
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Eaffect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006
- Author(s)
  Y.Kajikawa, N.Nishimoto, D.Fujioka, K.Ichida
- Journal Title
  
  Japanese Journal of Applied Physics vol.45 no.4A
  
  Pages: 2412-2416
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560285
[Journal Article] Effects rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006
- Author(s)
  梶川靖友, 西本尚己, 藤岡大輔, 市田桂也
- Journal Title
  
  Japanese Journal of Applied Physics 45(4A)(印刷中)
- NAID
  40007227439
- Data Source
  KAKENHI-PROJECT-17560285

1. MORITANI Akihiro (70029304)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. MIHASHI Yutaka

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. NAGAI Yutaka

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kajikawa Yasutomo 梶川 靖友

KAJIKAWA Yasutomo 梶川 靖友

Research Projects

Research Products

Co-Researchers

Research on materials for infrared semiconductor lasers used for detecting pollution gasesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

LONG-WAVELENGTH SEMICONDUCTOR LASERS FABRICATED ON GaAs SUBSTRATES USING NEW III-V ALLOYSPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Thallium incorporation during TlInAs growth by low-temperature MBE2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Effects of annealing on TlGaAs/GaAs single hetero structures and TlGaAs/GaAs multiple quantum well structures grown by low-temperature MBE2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Thallium incorporation during TlInAs growth by low-temperature MBE2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Properties of low-temperature grown InAs and their changes upon annealing2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Properties of low-temperature grown InAs and their changes upon annealing2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Effect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy2006

Author(s)

Journal Title

Data Source

[Journal Article] Eaffect of rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Effects rapid thermal annealing on photoluminescence properties of low-temperature grown InGaAs/GaAs multiple quantum wells2006

Author(s)

Journal Title

NAID

Data Source

Kajikawa Yasutomo 梶川靖友

KAJIKAWA Yasutomo 梶川靖友