Kita Kouji 喜多浩之

… Alternative Names

KITA Koji 喜多浩之

KITA Kita 喜多浩之

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Researcher Number	00343145
Other IDs
Affiliation (Current)	2025: 東京大学, 大学院新領域創成科学研究科, 教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 東京大学, 大学院新領域創成科学研究科, 教授 2016 – 2021: 東京大学, 大学院工学系研究科(工学部), 准教授 2017: 東京大学, 大学院・工学系研究科, 准教授 2012 – 2015: 東京大学, 工学(系)研究科(研究院), 准教授 2009 – 2012: The University of Tokyo, 大学院・工学系研究科, 准教授 … More 2007 – 2008: The University of Tokyo, 大学院・工学系研究科, 講師 2005: 東京大学, 大学院工学系研究科, 助手 2002 – 2005: 東京大学, 大学院・工学系研究科, 助手 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Structural/Functional materials / Physical properties of metals/Metal-base materials / Inorganic materials/Physical properties / Science and Engineering / Physical properties of metals Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / 電子デバイス・機器工学
Keywords	Principal Investigator 表面・界面物性 / 電子・電気材料 / 電子デバイス・機器 / 半導体物性 / 省エネルギー / 欠陥準位 / 移動度 / 炭化ケイ素 / パワーデバイス / 電気・電子材料 … More / 電界効果 / 不揮発性メモリ / 界面磁気異方性 / 強磁性体 / 酸化物 / 先端機能デバイス / 絶縁膜 / 酸素欠損 / 光吸収 / ゲルマニウム / ナノ薄膜 / HfO2 / 強誘電体 / 応力印加 / 界面双極子 / 誘電体 / 熱処理 / イオン打ち込み / MOSFET / 窒化反応 / 閾値電圧 / 格子歪み / 欠陥構造 / 界面準位 / ゲート絶縁膜 / SiC / インピーダンス解析 / 界面準位密度 / 光照射 / 界面特性 / 電界効果トランジスタ / 熱酸化膜 / デバイスプロセス / 電界効果移動度 / 不揮発メモリ / 化学状態 / 垂直磁気異方性 / 磁性 / 界面制御 / 電界応答 / 印加電圧 / 垂直磁化 / エレクトロクロノミック / セラミックス / イオン伝導 / エレクトロクロミック / 表面界面物性 / 抵抗変化 / 酸化物薄膜 / 欠陥 / 結晶性 / 低電圧化 / 電流-電圧特性 / フォーミング / 抵抗スイッチング / 酸化ニッケル / 抵抗変化メモリー / 表面酸化過程 / 表面酸化渦程 / 表面酸化 / 酸化機構 / 分光エリプソメトリー / 一酸化ゲルマニウム / 二酸化ゲルマニウム / 初期酸化過程 / 律速過程 / 同位体ガス / 酸化イットリウム / 酸化ハフニウム / シリケート / 界面反応 / シリコン / 高誘電率絶縁膜 … More Except Principal Investigator High-k膜 / 表面・界面物性 / ナノ材料 / 計算物理 / 電子・電気材料 / amorphous / polarizability / germanium / silicon / lanthanum oxide / yttrium oxide / hafnium oxide / high-k dielectrics / MISキャパシタ / ゲート絶縁膜 / オフアクシススパッタリング / オープンサーキットポテンシャル / スパックリング / Open Circuit Potential法 / 分光エリプソメトリー / 斜入射X線反射率測定 / 原子状酸素 / 酸化レート / 界面制御 / 基板面方位 / 高誘電率膜 / 光学フォノン / シリケート / Y2O3 / HfO2 / 界面層 / Y_2O_3 on Ge / LaYO_3薄膜 / 遠赤外特性 / Y-doped HfO_2 / Y_2O_3 / La_2O_3 / HfO_2 / アモルファス / 分極率 / ゲルマニウム / シリコン / 酸化ランタン / 酸化イットリウム / 酸化ハフニウム / 高誘電率絶縁膜 / HfLaOx / Si-doped HfO2 / Ge / ショットキーバリア高さ / 高圧酸化 / ESR / Fermi-level Pinning / GeO2 / Higher-k膜 / 構造相転移 / XPS / 界面ダイポール / 超薄膜 / 誘電体物性 / 電気・電子材料 / 高圧アニール / FET / サブミクロン / 粒径 / モビリティ / 有機トランジスタ / ペンタセン / 有機薄膜 / miniaturization / grain / hysteresis / degradation / oganic / Mobility / TFT / Pentacene Less

Understanding of unique phenomena at SiC surface and interface for controlling its MOS interface characteristicsPrincipal Investigator
- Principal Investigator
  
  喜多浩之
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Lowering the thinning limit of ferroelectric Hf-based oxide nanometer film by applying tensile strain and suppressing interface reactionsPrincipal Investigator
- Principal Investigator
  
  喜多浩之
- Project Period (FY)
  2024 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Interface charge engineering for manipulation of band alignment at dielectric interfaces and demonstration of its impact on device characteristicsPrincipal Investigator
- Principal Investigator
  
  Kita Koji
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Clarification of the guideline to improve SiC MOSFET performance based on the structural deformation analysis near the thermally-oxidized interfacePrincipal Investigator
- Principal Investigator
  
  KITA KOJI
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Quasi-quantitative characterization of defect density in SiC substrate after thermal oxidation by photo-assited capacitance measurementPrincipal Investigator
- Principal Investigator
  
  Kita Koji
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Study on Limiting Factors of Electron Mobility in SiC MOS Inversion Channel with Improved Quality InterfacePrincipal Investigator
- Principal Investigator
  
  Kita Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Development of Materials Informatics to Predict Polarization at Oxide Hetero-Interfaces
- Principal Investigator
  
  Watanabe Takanobu
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Study on voltage-induced change of interface magnetic anisotropy at ferromagnetic-oxide interface toward ultralow power consuming non-volatile memoriesPrincipal Investigator
- Principal Investigator
  
  Koji Kita
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Physical properties of metals/Metal-base materials
- Research Institution
  The University of Tokyo
Study on voltage control of interface anisotropy energy at ferromagnetic - oxide interfacesPrincipal Investigator
- Principal Investigator
  
  KITA Koji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  The University of Tokyo
Application of proton conduction of nickel oxide nanostructures to electrochromic devicesPrincipal Investigator
- Principal Investigator
  
  KITA Koji
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  The University of Tokyo
抵抗変化メモリーにおける酸化物/電極界面の電気特性と酸化物内結果準位の相関の解明Principal Investigator
- Principal Investigator
  
  喜多浩之
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Study on Ge surface oxidation processes based on in-situ analysisPrincipal Investigator
- Principal Investigator
  
  KITA Koji
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  The University of Tokyo
高誘電率絶縁膜-シリコン界面における界面反応層の形成・消失過程の解明Principal Investigator
- Principal Investigator
  
  喜多浩之
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  The University of Tokyo
ナノ・プラスティックFETの研究開発
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Tokyo
Study of Interface Control in Ultra-thin High-k Film on Silicon Substrate
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo

[Book] Dielectric Materials and Metals for Nanoelectronics and Photonics 102012
- Author(s)
  Editors: S. Kar, S. Van Elshocht, K. Kita, and D. Misra
- Total Pages
  358
- Publisher
  The Electrochemical Society, Pennington, NJ, USA
- Data Source
  KAKENHI-PROJECT-22656142
[Book] Physicsand Technology of High-k Materials 9",The Electrochemical Society,Pennington, NJ, USA (2011
- Author(s)
  Editors: S. Kar , M. Houssa, S. VanElshocht, D. Misra, and K. Kita
- Publisher
  ECSTransactions
- Data Source
  KAKENHI-PROJECT-22656142
[Book] Chap. 11 :"Interface Properties of High-k Dielectrics on Germanium Advanced Gate Stacks for High-Mobility Semiconductors2007
- Author(s)
  A. Toriumi, K. Kita, M. Toyama and H. Nomura
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Materials Engineering of High-k Gate Dielectrics, "Dielectric Films for Advanced Microelectronics, " edited by M. Baklanov, M. Green and K. Maex2007
- Author(s)
  A. Toriumi, K. Kita
- Total Pages
  40
- Publisher
  John Wiley & Sons, Ltd
- Data Source
  KAKENHI-PROJECT-19106005
[Book] "Interface Properties of High-k Dielectrics on Germanium", in "Advanced Gate Stacks for High-Mobility Semiconductors", A. Dimoulas, E. Gusev, P.C. Mclntyre and M. Heyns (ed. )2007
- Author(s)
  A. Toriumi, K. Kita, M. Toyama, H. Nomura
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19686037
[Book] Materials Engineering of High-k Gate Dielectrics in "Dielectric Films for Advanced Microelectronics"(edited by M. Baklanov, M. Green and K. Maex)2007
- Author(s)
  A. Toriumi, K. Kita
- Publisher
  John Wiley & Sons, Ltd
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Interface Properties of High-k Dielectrics On Germanium, Advanced Gate Stacks for High-Mobility Semiconductors, " edited byA. Dimoulas, E. Gusev, P. AcIntyre, M. Heyns2007
- Author(s)
  A. Toriumi, K. Kita, M. Toyama, H. Nomura
- Total Pages
  11
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after crystallization process2024
- Author(s)
  Inoue Tatsuya, ONAYA Takashi, KITA Koji
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 5 Pages: 051003-051003
- DOI
  10.35848/1882-0786/ad379a
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)2024
- Author(s)
  Chu Qiao、Masunaga Masahiro、Shima Akio、Kita Koji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 3 Pages: 030901-030901
- DOI
  10.35848/1347-4065/ad2aa6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Verification of modulation mechanism of the interfacial dipole effect by changing the stacking sequence of monatomic layers in perovskite oxides2023
- Author(s)
  Tamura Atsushi, Kita Koji
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 134 Issue: 23
- DOI
  10.1063/5.0169529
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing2023
- Author(s)
  Hatmanto Adhi Dwi, Kita Koji
- Journal Title
  
  Solid State Phenomena
  
  Volume: 345 Pages: 131-136
- DOI
  10.4028/p-n0q5nl
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films2023
- Author(s)
  Onaya Takashi, Nabatame Toshihide, Nagata Takahiro, Tsukagoshi Kazuhito, Kim Jiyoung, Nam Chang-Yong, Tsai Esther H.R., Kita Koji
- Journal Title
  
  Solid-State Electronics
  
  Volume: 210 Pages: 108801-108801
- DOI
  10.1016/j.sse.2023.108801
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550, KAKENHI-PROJECT-20H02189
[Journal Article] Structural distortion in ferroelectric HfO2 - The factor that determines electric field-induced phase transformation2023
- Author(s)
  Nittayakasetwat Siri, Momiyama Haruki, Kita Koji
- Journal Title
  
  Solid-State Electronics
  
  Volume: 204 Pages: 108639-108639
- DOI
  10.1016/j.sse.2023.108639
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing2023
- Author(s)
  Yang Tianlin, Kita Koji
- Journal Title
  
  Solid-State Electronics
  
  Volume: 210 Pages: 108815-108815
- DOI
  10.1016/j.sse.2023.108815
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET2022
- Author(s)
  Tae-Hyeon Kil, Munetaka Noguchi, Hiroshi Watanabe, and Koji Kita
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 1 Pages: 92-95
- DOI
  10.1109/led.2021.3125945
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Characterization of deep traps in the near-interface oxide of widegap metal?oxide?semiconductor interfaces revealed by light irradiation and temperature change2022
- Author(s)
  Rimpei Hasegawa and Koji Kita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SH Pages: SH1006-SH1006
- DOI
  10.35848/1347-4065/ac6564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Unexpected fixed charge generation by an additional annealing after interface nitridation processes at the SiO2/4H-SiC (0001) interfaces2022
- Author(s)
  Kil Tae-Hyeon, Yang Tianlin, Kita Koji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SH Pages: SH1008-SH1008
- DOI
  10.35848/1347-4065/ac68cd
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Anomalous structural distortion - a possible origin for the waking-up of the spontaneous polarization in ferroelectric HfO22021
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 7 Pages: 070908-070908
- DOI
  10.35848/1347-4065/ac085c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Impacts of band alignment change after interface nitridation on the leakage current of SiO2/4H-SiC (0001) and (1-100) MOS capacitors2021
- Author(s)
  Tae-Hyeon Kil, Atsushi Tamura, Sumera Shimizu, and Koji Kita
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 8 Pages: 081005-081005
- DOI
  10.35848/1882-0786/ac16b9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771, KAKENHI-PROJECT-21H04550
[Journal Article] Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation2021
- Author(s)
  Atsushi Tamura, Seungwoo Jang, Young-Geun Park, Hanjin Lim, and Koji Kita
- Journal Title
  
  Solid-State Electronics
  
  Volume: 185 Pages: 108128-108128
- DOI
  10.1016/j.sse.2021.108128
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces2021
- Author(s)
  Tae-Hyeon Kil, Munetaka Noguchi, Hiroshi Watanabe and Koji Kita
- Journal Title
  
  Solid-State Electronics
  
  Volume: 183 Pages: 108115-108115
- DOI
  10.1016/j.sse.2021.108115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04550
[Journal Article] Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale2021
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Journal Title
  
  Solid-State Electronics
  
  Volume: 184 Pages: 108086-108086
- DOI
  10.1016/j.sse.2021.108086
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771, KAKENHI-PROJECT-21H04550
[Journal Article] Physical analysis of remained oxidation byproducts as the origins of lattice distortion at the surface of 4H-SiC by Fourier-transform infrared spectroscopy2020
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59 Issue: SM Pages: SMMA02-SMMA02
- DOI
  10.35848/1347-4065/ab7fe9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H-SiC (1-100)2020
- Author(s)
  Qiao Chu, Masato Noborio, Sumera Shimizu, and Koji Kita
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 116 Pages: 105147-105147
- DOI
  10.1016/j.mssp.2020.105147
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer in multilayered dielectric capacitors for energy harvesting2020
- Author(s)
  Takashi Hamaguchi and Koji Kita
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59 Issue: SM Pages: SMMA05-SMMA05
- DOI
  10.35848/1347-4065/ab8bbe
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Significant reduction of interface trap density of SiC PMOSFETs by post-oxidation H2O annealing processes with different oxygen partial pressures2020
- Author(s)
  Jun Koyanagi, Mizuki Nishida and Koji Kita
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59 Issue: SM Pages: SMMA06-SMMA06
- DOI
  10.35848/1347-4065/ab8e1f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Anomalous band alignment change of SiO2/4H-SiC (0001) and (000-1) MOS capacitors induced by NO-POA and its possible origin2020
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 116 Issue: 12
- DOI
  10.1063/1.5135606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Consideration on SiO2/4H-SiC Band Alignment Modulation by NO Annealing2020
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 3 Pages: 47-53
- DOI
  10.1149/09803.0047ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Similarity and difference of the impact of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface2019
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 12 Issue: 8 Pages: 085507-085507
- DOI
  10.7567/1882-0786/ab30d4
- NAID
  210000156788
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Study on the Effects of Post-Deposition Annealing on SiO2/β-Ga2O3 MOS Characteristics2019
- Author(s)
  Koji Kita, Eiki Suzuki, and Qin Mao
- Journal Title
  
  ECS Transactions
  
  Volume: 92 (1) Issue: 1 Pages: 59-63
- DOI
  10.1149/09201.0059ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Anomalous temperature dependence of Al2O3/SiO2 and Y2O3/SiO2 interface dipole layer strengths2019
- Author(s)
  Nittayakasetwat Siri、Kita Koji
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Issue: 8 Pages: 084105-084105
- DOI
  10.1063/1.5079926
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)2019
- Author(s)
  Hatmanto Adhi Dwi、Kita Koji
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 5 Pages: 055505-055505
- DOI
  10.7567/1882-0786/ab103e
- NAID
  210000135702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Significant Structural Distortion in the Surface Region of 4H-SiC Induced by Thermal Oxidation and Recovered by Ar Annealing2018
- Author(s)
  Kita Koji、Hatmanto Adhi Dwi
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Issue: 12 Pages: 63-67
- DOI
  10.1149/08612.0063ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face2018
- Author(s)
  Hirai Hirohisa、Kita Koji
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 17 Pages: 172103-172103
- DOI
  10.1063/1.5042038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry",2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 011201-011201
- DOI
  10.7567/apex.11.011201
- NAID
  210000136054
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Journal Article] Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation2018
- Author(s)
  Kita Koji、Nishida Mizuki、Sakuta Ryota、Hirai Hirohisa
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Issue: 2 Pages: 61-65
- DOI
  10.1149/08602.0061ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03771
[Journal Article] Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy2017
- Author(s)
  Hirohisa Hirai and Koji Kita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 15 Pages: 152104-152104
- DOI
  10.1063/1.4980093
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-15J10704
[Journal Article] Demonstration of Large Flatband Voltage Shift by Designing Al2O3/SiO2 Laminated Structures with Multiple Interface Dipole Layers2017
- Author(s)
  Koji Kita and Hironobu Kamata
- Journal Title
  
  ECS Transactions
  
  Volume: 80 (1) Issue: 1 Pages: 379-385
- DOI
  10.1149/08001.0379ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14227
[Journal Article] Effects of high-temperature diluted-H2 annealing on effective mobility of SiC MOSFETs estimated by split capacitance-voltage technique2017
- Author(s)
  Hirohisa Hirai and Koji Kita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 11 Pages: 1113021-4
- DOI
  10.7567/jjap.56.111302
- NAID
  210000148419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-15J10704
[Journal Article] Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors2017
- Author(s)
  Hironobu Kamata and Koji Kita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 10
- DOI
  10.1063/1.4978223
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-16K14227
[Journal Article] Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide2017
- Author(s)
  Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama, Kei Ishinoda
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 186-189
- DOI
  10.1016/j.mee.2017.05.042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-15J10704, KAKENHI-PROJECT-16K14227
[Journal Article] Difference of Near-Interface SiO2 Structures between O2-oxidation and H2O-oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics2017
- Author(s)
  Koji Kita, Hirohisa Hirai, and Kei Ishinoda
- Journal Title
  
  ECS Transactions
  
  Volume: 80 (7) Issue: 7 Pages: 123-128
- DOI
  10.1149/08007.0123ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-15J10704
[Journal Article] Opportunity of dipole layer formation at non-SiO 2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systems2017
- Author(s)
  Fei Jiayang、Kita Koji
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 225-229
- DOI
  10.1016/j.mee.2017.05.035
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17J10451, KAKENHI-PROJECT-16K14227
[Journal Article] Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions2017
- Author(s)
  Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, and Koji Kita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 16 Pages: 1629071-6
- DOI
  10.1063/1.4980059
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03979, KAKENHI-PROJECT-16K14227
[Journal Article] Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures2016
- Author(s)
  Yuki Fujino and Koji Kita
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 120 Issue: 8
- DOI
  10.1063/1.4961871
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-16K14227
[Journal Article] Effects of High-Temperature Diluted-H2 Annealing on Effective Mobility of 4H-SiC MOSFETs with Thermally-Grown SiO22016
- Author(s)
  Hirohisa Hirai and Koji Kita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04ER16-04ER16
- DOI
  10.7567/jjap.55.04er16
- NAID
  210000146430
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03969, KAKENHI-PROJECT-15J10704
[Journal Article] Understanding the impact of interface reaction on dipole strength at MgO/SiO2 and Y2O3/SiO2 interfaces2016
- Author(s)
  Jiayang Fei and Koji Kita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EB11-04EB11
- DOI
  10.7567/jjap.55.04eb11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03979, KAKENHI-PROJECT-26630291
[Journal Article] Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics2016
- Author(s)
  Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, Takanobu Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EB03-04EB03
- DOI
  10.7567/jjap.55.04eb03
- NAID
  210000146271
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03979
[Journal Article] Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements2015
- Author(s)
  Yuki Fujino and Koji Kita
- Journal Title
  
  ECS Transactions
  
  Volume: 69 (5) Issue: 5 Pages: 219-225
- DOI
  10.1149/06905.0219ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03969
[Journal Article] Fabrication of SiO2/4H-SiC (0001) Interface with Nearly-Ideal Capacitance-Voltage Characteristics by Thermal Oxidation2014
- Author(s)
  Richard Heihachiro Kikuchi and Koji Kita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 3 Pages: 032106-032106
- DOI
  10.1063/1.4891166
- NAID
  120005537750
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360287
[Journal Article] Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics2014
- Author(s)
  Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Issue: 2 Pages: 135-142
- DOI
  10.1149/06102.0135ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360287
[Journal Article] Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density2014
- Author(s)
  Koji Kita, Richard Heihachiro Kikuchi, Hirohisa Hirai, and Yuki Fujino
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 8 Pages: 23-28
- DOI
  10.1149/06408.0023ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360287, KAKENHI-PROJECT-26630291
[Journal Article] Conduction band offset at Ge02/Ge interface determined by internal photoemission and charge-corrected x-rav photoelectron spectroscopies2013
- Author(s)
  W. F. Zhang
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 10 Pages: 102106-1
- DOI
  10.1063/1.4794417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12F02061, KAKENHI-PROJECT-22656142, KAKENHI-PROJECT-25249032
[Journal Article] QuantitativeCharacterization of Band-Edge EnergyPositions in High-k Dielectrics byX-ray Photoelectron Spectroscopy2013
- Author(s)
  Y. Chikata, K. K i ta , T. Nishimura, K.Nagashio, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 52 Issue: 2R Pages: 21101-21101
- DOI
  10.7567/jjap.52.021101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142, KAKENHI-PROJECT-24656200
[Journal Article] Voltage-Induced Nonvolatile Change of Magnetic Anisotropy of CoFeB Ultrathin Films Stacked With Multivalent Oxides2013
- Author(s)
  Jiro Koba and Koji Kita
- Journal Title
  
  ECS Transactions
  
  Volume: 58 (5) Issue: 5 Pages: 127-133
- DOI
  10.1149/05805.0127ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360287
[Journal Article] Impact of Ta Diffusion on the Perpendicular Magnetic Anisotropy of Ta/CoFeB/MgO2013
- Author(s)
  Naruto Miyakawa, D. C. Woriedge, and Koji Kita
- Journal Title
  
  IEEE Magnetic Letters
  
  Volume: 4 Pages: 1000104-1000104
- DOI
  10.1109/lmag.2013.2240266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360287
[Journal Article] Electrci-field-control of magnetic anisotropy of Co_<0.6>Fe_<0.2>B_<0.2>/oxide stacks using reduced voltage2012
- Author(s)
  Koji Kita, David W. Abraham, Martin J. Gajek, and D. C. Worledge
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 3 Pages: 33919-33919
- DOI
  10.1063/1.4745901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360287
[Journal Article] Counter Dipole Layer Formation in Multi-layer High-k Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Counter DipoleLayer Formation in Multilayer High-kGate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51 Issue: 8R Pages: 81303-81303
- DOI
  10.1143/jjap.51.081303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142, KAKENHI-PROJECT-24656200
[Journal Article] Interfacial Dipole at High-k Dielectric/SiO_2 Interface : X-ray PhotoelectronSpectroscopy Characteristics2011
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Torium
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Pages: 31502-31502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Opportunity for Phase-controlled Higher-k HfO_22011
- Author(s)
  A. Toriumi, Y. Nakajima, and K. Kita
- Journal Title
  
  ECS-Trans.
  
  Volume: 41(7) Pages: 125-136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime2011
- Author(s)
  K.Tomida, K.Kita, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 11R Pages: 111502-111502
- DOI
  10.1143/jjap.50.111502
- NAID
  40019072737
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Interfacial Dipole at High-k Dielectrics/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics2011
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50
- NAID
  40018777874
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Higher-k Scalability and Leakage Current Reduction of SiO_2-Doped HfO_2 in Direct Tunneling Regime2011
- Author(s)
  K. Tomida, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Pages: 111502-111502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Study on Dipole Layer Formation between Two Oxides :Experimental Evidences and Possible Models2011
- Author(s)
  K . K i ta and A. Toriumi
- Journal Title
  
  MRS Proceedings
  
  Volume: 1331
- DOI
  10.1557/opl.2011.1519
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide semiconductor devices2010
- Author(s)
  Y.Zhao, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Letters
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027015062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Experimental Demonstration of Higher-k Phase HfO2 through Non equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 203-212
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Direct LaLuO3/Ge Gate Stack Formation by Interface Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(3) Pages: 375-382
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 3 Issue: 6 Pages: 61501-61501
- DOI
  10.1143/apex.3.061501
- NAID
  210000014682
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 171-180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers2010
- Author(s)
  K.Kita, A.Eika, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 315-322
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Thermodynamic analysis of moistureabsorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices2010
- Author(s)
  Y. Zhao, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 96 Pages: 242901-242901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 463-477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T, Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 33-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] GeO2/Ge界面制御によるGe-nMOSFETsの電子移動度の向上-Siユニバーサルカーブを超える移動度特性の実証-2010
- Author(s)
  李忠賢, 西村知紀, 喜多浩之, 長汐晃輔, 鳥海明
- Journal Title
  
  電子情報通信学会技術研究報告 109(408)
  
  Pages: 13-16
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Desorption kinetics of GeO from GeO_2/Ge structure2010
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3
- NAID
  210000014682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Pages: 61501-61501
- NAID
  10027015062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 463-477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Desorption kinetics of GeO from GeO2/Ge structure2010
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio , A.Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] GeO_2/Ge界面反応の理解に基づくGeO_2膜物性の劣化現象の制御2010
- Author(s)
  喜多浩之, 王盛凱, 李忠賢, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110(90) Pages: 55-60
- NAID
  110007890345
- Data Source
  KAKENHI-PROJECT-22656142
[Journal Article] GeO_2/Ge界面制御によるGe-nMOSFETsの電子移動度の向上-Siユニバーサルカーブを超える移動度特性の実証-2010
- Author(s)
  李忠賢, 西村知紀, 喜多浩之, 長汐晃輔, 鳥海明
- Journal Title
  
  電子情報通信学会技術研究報告 109(408)
  
  Pages: 13-16
- NAID
  110008001111
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality2009
- Author(s)
  C.H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, A. Toriumi
- Journal Title
  
  2009 IEEE International Electron Device Meeting (IEDM)
  
  Pages: 457-460
- NAID
  110008001111
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Origin of Electric Dipoles Formed at Highk/SiO_2 Interface2009
- Author(s)
  K. Kita and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett. 94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO2 Interface2009
- Author(s)
  K. Kita, A. Toriumi
- Journal Title
  
  Appl. Phys. Lett. 94
  
  Pages: 132902-132902
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 71404-71404
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Comprehensive Study of GeO_2 Oxidation, GeO Desorption and GeO_2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K.Kita, S.K.Wang, M.Yoshida, C.H.Lee, K.Nagashio, T.Nishimura, A.Toriumi
- Journal Title
  
  Technical Digest of 2009 IEEE International Electron Device Meetir 2009
  
  Pages: 693-696
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Comprehensive Study of GeO_2 Oxidation, GeO Desorption and GeO_2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K.Kita, S.K.Wang, M.Yoshida, C.H.Lee, K.Nagashio, T.Nishimura, A.Toriumi
- Journal Title
  
  Technical Digest of 2009 IEEE International Electron Device Meeting 2009
  
  Pages: 693-696
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, A. Toriumi
- Journal Title
  
  ECS Trans. 19(1)
  
  Pages: 165-173
- NAID
  210000014403
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, C.H.Lee, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Materials Research Society Symposium Proceedings 1155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] High Electron Mobility Ge n-Channel MOSFETs with GeO_2 grown by High Pressure Oxidation2009
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2009 International Conference on Solid State Devices and Materials 2009
  
  Pages: 1000-1001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, A. Toriumi
- Journal Title
  
  Appl. Phys. Express 2
  
  Pages: 71404-71404
- NAID
  210000014403
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Control of Properties of GeO_2 Films and Ge/GeO_2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K.Kita, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions 19(2)
  
  Pages: 101-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO_2 Interface2009
- Author(s)
  K. Kita, A. Toriumi
- Journal Title
  
  Appl.Phys.Lett 94
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] On the Origin of anomalous VTH shift in high-k MOSFETs2009
- Author(s)
  A.Toriumi, K.Kita
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 243-252
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K. Nagashio, C. H. Lee, T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  MRS Symp. Proc.
  
  Volume: 1155 Pages: 6-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dielectric and electrical properties of amorphous La1.xTaxOy films as higher-k gate insulators2009
- Author(s)
  Y.Zhao, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Journal of Applied Physics 105
  
  Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO_2 Interface2009
- Author(s)
  K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 1329032-1329032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Control of Properties of GeO2 Films and Ge/ GeO2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K. Kita, C.H. Lee, T. Nishimura, K. Nagashio, A. Toriumi
- Journal Title
  
  ECS Trans. 19(2)
  
  Pages: 101-116
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO2 Interface2009
- Author(s)
  K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Letter 94
  
  Pages: 132902-132902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K.Kita, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions 19(2)
  
  Pages: 101-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Band gap enhancement and electrical properties of La_2O_3 films doped with Y_2O_3 as high-k gate insulators2009
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 94 Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO_2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 165-173
- NAID
  10025087101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Origin of Electric Dipoles Formed at Highk/SiO_2 Interface2009
- Author(s)
  K. Kita and A. Toriumi
- Journal Title
  
  Appr. Phys. Lett. 94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] ^<18>O isotope tracing of GeO Desorption from GeO_2/Ge Structure2009
- Author(s)
  S.K.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2009 International Conference on Solid State Devices and Materials 2009
  
  Pages: 1002-1003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Control of Properties of GeO_2 Films and Ge/GeO_2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Journal Title
  
  ECS Transactions 19(2)
  
  Pages: 101-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Spectroscopic Ellipsometry Study on Defects Generation in GeO_2/Ge stacks2009
- Author(s)
  K.Kita, M.Yoshida, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2009 International Conference on Solid State Devices and Materials 2009
  
  Pages: 1008-1009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Opportunities and challenges for Ge CMOS-Control of interfacing field on Ge is a key-2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Journal Title
  
  Microelectronic Engineering 86
  
  Pages: 1571-1576
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 71404-71404
- NAID
  10025087101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 165-173
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dielectric and electrical properties of amorphous La_<1-x> Ta_xO_y films as higher-k gate insulators2009
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 105 Pages: 34103-34103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators2009
- Author(s)
  Y.Zhao, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Applied Physics Letter 94
  
  Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K. Kita, S.K. Wang, M. Yoshida, C.H. Lee, K. Nagashio, T. Nishimura, A. Toriumi
- Journal Title
  
  2009 IEEE International Electron Device Meeting (IEDM)
  
  Pages: 693-696
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, A. Toriumi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6100-6100
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Appl.Phys.Exp 1
- NAID
  10025080321
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Direct Evidence of GeO Volatilization from GeO_2/Ge and Imapact of Its Suppression on GeO_2/Ge Metal-Insulator-Semicondauctor CharacteristicsDirect Evidence of GeO Volatilization from GeO_2/Ge and Impact of Its Suppression on GeO_2/Ge Metal-Insulator-Semiconductor Characteristics2008
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4B)
  
  Pages: 2349-2354
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura and A. Toriumi
- Journal Title
  
  Appl. Surf. Sci.
  
  Volume: 254 Pages: 6100-6105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors2008
- Author(s)
  Tabata, C.H. Lee, K. Kita, A. Toriumi
- Journal Title
  
  ECS Trans. 16(5)
  
  Pages: 479-486
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Study of Kinetic Behaviors of GeO in GeO_2/Ge Stacks2008
- Author(s)
  K. Kita, C.H. Lee, T. Nishimura, K. Nadashio, and A. Toriumi
- Journal Title
  
  ECS Transactions 16(5)
  
  Pages: 187-194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Study of Kinetic Behaviors of GeO in GeO_2/Ge Stacks2008
- Author(s)
  K. Kita, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Journal Title
  
  ECS Transactions 16(5)
  
  Pages: 187-194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Impact of High Pressure _O_2 Annealing on Amorphous LaLuO_3/Ge MIS Caoacitors2008
- Author(s)
  T. Tabata, C. H. Lee, K-Kita, and A. Toriumi
- Journal Title
  
  ECS. Transactions 16(5)
  
  Pages: 479-486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks2008
- Author(s)
  K. Kita, C.H. Lee, T. Nishimura, K. Nagashio, A. Toriumi
- Journal Title
  
  ECS Trans. 16(5)
  
  Pages: 187-194
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Control of high-k/germanium interface properties through selection of high-kmaterials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, and A. Toriumi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6100-6107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 1
- NAID
  10025080321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of highk/germanium interface properties through selection of high-k materials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, and A. Toriumi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6100-6107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035003
[Journal Article] Internal Photoemission over HfO_2 and Hf_<1-x> Si_xO_2 High-k Insulating Barriers : Band Offset and Interfacial Dipole Characterization2008
- Author(s)
  J. Widiez, K. Kita, K. Tomida, T. Nishimura, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 47 Pages: 2410-2414
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal-Insulator-Semiconductor Characteristics2008
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2349-2349
- NAID
  210000064485
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as Highk Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  ECS Transaction 6(1)
  
  Pages: 141-148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Journal Title
  
  ECS Trans. 11(4)
  
  Pages: 461-469
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Eividence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Applied Physics Letter 91
  
  Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Journal Title
  
  ECS Transaction 11(4)
  
  Pages: 461-469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dramatic Improvement of GeO_2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi
- Journal Title
  
  ECS Transactions 11(4)
  
  Pages: 461-469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 91 Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Proof of Ge-Interfacing Concepts for Metal/ High-k/Ge CMOS -Ge-intimate Material Selection and Interface Conscious Process Flow2007
- Author(s)
  T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, A. Toriumi
- Journal Title
  
  2007 IEEE International Electron Device Meeting (IEDM)
  
  Pages: 697-700
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Ge/High-k膜の界面反応に着目した電気特性の制御2007
- Author(s)
  喜多浩之, 能村英幸, 鈴木翔, 高橋俊岳, 西村知紀, 鳥海明
- Journal Title
  
  電子情報通信学会技術研究報告 107(85)
  
  Pages: 85-90
- NAID
  110006343333
- Data Source
  KAKENHI-PROJECT-19686037
[Journal Article] Study of La-Induced Flat band Voltage Shift in Metal/HfLaO_x/SiO_2/Si Capacitors2007
- Author(s)
  Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 46(11) Pages: 7251-7255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno and A. Toriumi
- Journal Title
  
  ECS-Trans.
  
  Volume: 6(1) Pages: 141-148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Study of La-Induced Flatband Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors2007
- Author(s)
  Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics 46(11)
  
  Pages: 7251-7255
- NAID
  40015705092
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics Pt. 1 46(7)
  
  Pages: 4189-4192
- NAID
  40015465525
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] 分極率の制御による三次元系High-k膜の高誘電化へのアプローチ2006
- Author(s)
  喜多浩之, 他
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 第11回
  
  Pages: 233-238
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Doped HfO_2 for Higher-k Dielectrics2006
- Author(s)
  A.Toriumi, Y.Yamamoto, Y.Zhao, K.Tomida, K.Kita
- Journal Title
  
  ECS Transactions 1(to be published)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing2006
- Author(s)
  K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  International Conference on Microelectronics and Interfaces (ICMI'06)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Dielectric Properties of Metal-Doped HfO_2 for Higher-k Gate Insulators (invited paper)2006
- Author(s)
  K.Kita, K.Tomida, Y.Yamamoto, Y.Zhao, K.Kyuno, A.Toriumi
- Journal Title
  
  2006 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  
  Pages: 27-28
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon2006
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Applied Physics Letters 88(7)
  
  Pages: 72904-72904
- NAID
  10022542508
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Dielectric Properties of Metal-Doped HfO^2 for Higher-k Gate Insulators2006
- Author(s)
  K.Kita et al.
- Journal Title
  
  2006 International Meeting for Future of Electron Devices, Kansai 2006
  
  Pages: 27-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology of Higher-k Ternary Dielectric Films with Polarizability Engineering2006
- Author(s)
  K.Kita, Y.Yamamoto, K.Tomida, Y.Zhao, A.Toriumi
- Journal Title
  
  Ext.Abst. 11th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 233-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Doped HfO_2 for Higher-k Dielectrics2006
- Author(s)
  A.Toriumi, Y.Yamamoto, Y.Zhao, K.Tomida, K.Kita
- Journal Title
  
  ECS Transactions 1(出版予定)
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon2006
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 72904-72904
- NAID
  10022542508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Evolution of Leakage Paths in HfO_2/SiO_2 Stacked Gate Dielectrics : A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 86(6)
  
  Pages: 63510-63510
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] CVD-SiO^2膜のアニール効果のOCP法による評価2005
- Author(s)
  喜多浩之, 他
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 第10回
  
  Pages: 265-270
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology for La_2O_3-Based Ternary Higher-k Dielectrics2005
- Author(s)
  K.Kita, Yi Zhao, Y.Yamamoto, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials 2005
  
  Pages: 858-859
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] Ion-Implanted p/n Junction Characteristics p- and n-type Germanium2005
- Author(s)
  T.Nishimura, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 520-521
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Increase of YttiriumDoped HfO^2 through Structural Phase Transformation2005
- Author(s)
  K.Kita et al.
- Journal Title
  
  Appl. Phys. Lett. 86(7)
  
  Pages: 102906-102906
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] High Crystallization Temperature and Low Fixed Charge Density of HfLaOx Films2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  36th IEEE Semiconductor Interface Specialists Conference (SISC) 36
  
  Pages: 10-10
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] GIXR Analysis of High-k Multilayer Structure2005
- Author(s)
  H.Shimizu, K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 167-172
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Thermally Robust Y_2O_3/Ge MOS Capacitors2005
- Author(s)
  H.Nomura, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 858-859
- NAID
  10022543442
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Evolution of leakage paths in HfO_2/SiO_2 stacked gate dielectrics : A stable direct observation by ultrahigh vacuum conducting atomic force microscopy2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Letters 86(6)
  
  Pages: 63510-63510
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Effects of Germanium Surface Orientation on HfO_2/Ge Interface2005
- Author(s)
  M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 209-214
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology for La_2O_3-Based Ternary Higher-k Dielectrics2005
- Author(s)
  K.Kita, Yi Zhao, Y.Yamamoto, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 252-253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology for La2O_3-Based Ternary Higher-k Dielectrics2005
- Author(s)
  K.Kita, Yi Zhao, Y.Yamamoto, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials 2005
  
  Pages: 858-859
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Polarity Dependence of Leakage Current in HfO_2/SiO_2 Stacked Structures : An Observation by UHV-C-AFM2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 309-314
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon2005
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 546-547
- NAID
  10022542508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing2005
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys.Pt.1 44(8)
  
  Pages: 6131-6135
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Enhancement of Hf_<(1-x)>Si_xO_2 Film with High Temperature Annealing2005
- Author(s)
  K.Tomida, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 232-233
- NAID
  10022541528
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] A New Hf-based Dielectric Member, HfLaO_x, for Amorphous High-k Gate Insulators in Advanced CMOS2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 254-255
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing2005
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics Pt.1,44
  
  Pages: 6131-6135
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Far- and Mid- Infrared Absorption Study of HfO_2/SiO_2/Si System (invited paper)2005
- Author(s)
  A.Toriumi, K.Tomida, H.Shimizu, K.Kita, K.Kyuno
- Journal Title
  
  207th Meeting of the Electrochemical Society
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Pemittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Modification2005
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 102906-102906
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing2005
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics Pt.1,44
  
  Pages: 6131-6135
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] High Crystallization Temperature and Low Fixed Charge Density of HfLaO_x Films2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  36th IEEE Semiconductor Interface Specialists Conference (SISC) P-11
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Thermally Robust Y_2O_3/Ge MOS Capacitors2005
- Author(s)
  H.Nomura, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials 2005
  
  Pages: 858-859
- NAID
  10022543442
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] Design Methodology for La^2O^3-Based Ternary Hifher-k Dielectrics2005
- Author(s)
  K.Kita et al.
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials 2005
  
  Pages: 858-859
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity increase of yttrium-doped HfO_2 through structural phase transformation2005
- Author(s)
  K.Kita et al.
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 102906-102906
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Annealing Effects on CVD-SiO_2 Films Characterized by OCP Measurement2005
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 265-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Ge及びSi基板上のHfO^2薄膜の初期成長過程の違い2004
- Author(s)
  喜多浩之, 他
- Journal Title
  
  極薄シリコン酸化膜の形成・評価・信頼性,第9回薄膜・表面物理分科会・シリコンテクノロジー文化会共催特別研究会第9回
  
  Pages: 259-264
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Initial Growth Mechanism Difference between HfO_2 Films on Ge and Si Substrates2004
- Author(s)
  K.Kita, M.Sasagawa, M.Toyama, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 9th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides
  
  Pages: 259-264
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Sielectric Constant Increase of Yttium-Doped HfO^2 by Structural Phase Modification2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  Extended Abstracts of 2004 International Conference on Solid State Devices and Materials 2004
  
  Pages: 794-795
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Growth Mechanism Difference of Sputtered HfO^2 between on Ge and on Si2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  Applied Physics Lstters 85(1)
  
  Pages: 52-54
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by Open-Circuit Measurement2004
- Author(s)
  K.kita et al.
- Journal Title
  
  Extended Abstracts of 2004 International Conference on Solid State Devices and Materials 2004
  
  Pages: 786-787
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Growth Mechanism Difference of Sputtered HfO_2 between on Ge and on Si2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 85(1)
  
  Pages: 52-54
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Retarded Growth of Squtterfed HfO^2 films on Germanium2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  Integration of Advanced Micro and Nanoelectronic Devices-Critical Issues and Solutions, MRS Symp. Proc. 811
  
  Pages: 169-174
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Retarded Growth of Sputtered HfO_2 films on Germanium2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, MRS Symp.Proc. 811
  
  Pages: 169-174
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing2004
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 796-797
- NAID
  10022540167
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Transformation2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  35th IEEE Semiconductor Interface Specialists Conference
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2004 International Conference on Solid State Devices and Materials 2004
  
  Pages: 794-794
- NAID
  10022540160
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification2004
- Author(s)
  K Kita, K Kyuno, A Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 794-795
- NAID
  10022540160
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Oxidation Mechanism at HfO_2/Si Interface2004
- Author(s)
  H.Shimizu, K.Tomida, M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 9th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides
  
  Pages: 265-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Transformation2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  35th IEEE Semiconductor Interface Specialists Conference (SISC) LP-3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 Stacked Structures2004
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 788-789
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] IR Absorption Study of HfO_2 and HfO_2/Si Interface Ranging from 200cm^<-1> to 2000cm^<-1>2004
- Author(s)
  K.Tomida, H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, MRS Symp.Proc. 811
  
  Pages: 319-324
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by Open-Circuit Measurement2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 786-787
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount Si2004
- Author(s)
  K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 790-791
- NAID
  10022540150
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Growth mechanism difference of sputtered HfO_2 on Ge and on Si2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  Applied Physics Letters 85(1)
  
  Pages: 52-54
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing2004
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2004 International Conference on Solid State Devices and Materials 2004
  
  Pages: 796-796
- NAID
  10022540167
- Data Source
  KAKENHI-PROJECT-16760563
[Journal Article] Permittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Transformation2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 86(7)102906(2005).rface Specialists Conference (SISC) LP-3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface2004
- Author(s)
  M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 226-227
- NAID
  10022538299
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Increase of Yttrium-Doped HfO^2 through Structural Phase Transformation2004
- Author(s)
  K.Kita et al.
- Journal Title
  
  35th IEEE Semiconductor Interface Specialists Conference 2004
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Post-Deposition Annealing Effects on Interface States Generation in HfO_2/SiO_2/Si MOS Capacitors2004
- Author(s)
  M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 534-535
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement2003
- Author(s)
  K.Kita et al.
- Journal Title
  
  Japanese Journal of Applied Physics Pt.2, 42
- NAID
  10011259919
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO_2 Gate Dielectrics2003
- Author(s)
  K.Kita, M.Sasagawa, K.Tomida, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2003 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 292-293
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] A New CharacterizationTechnique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement,2003
- Author(s)
  K.Kita et al.
- Journal Title
  
  2003 Int. Conference on Characterization and Metrology for ULSI Technology, AIP Conf. Proc. 550
  
  Pages: 166-170
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Further EOT Scaling of Ge/HfO^2 over Si/HfO^2 MOS Systems2003
- Author(s)
  K.Kita et al.
- Journal Title
  
  Int. Workshop on Gate Insulator 2003
  
  Pages: 186-191
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement2003
- Author(s)
  K.Kita, M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys. 42,Pt.2(6B)
- NAID
  10011259919
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement2003
- Author(s)
  K.Kita, M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  2003 Int. Conference on Characterization and Metrology for ULSI Technology, AIP Conf.Proc. 550
  
  Pages: 166-170
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Further EOT Scaling of Ge/HfO_2 over Si/HfO_2 MOS Systems2003
- Author(s)
  K.Kita, M.Sasagawa, K.Tomida, M.Toyama, K.Kyuno, A.Toriumi
- Journal Title
  
  Int. Workshop on Gate Insulator (IWGI)
  
  Pages: 186-191
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Interface Oxidation Mechanism in HfO_2/Silicon System with Post-Deposition Annealing2003
- Author(s)
  H.Shimizu, M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst.Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 486-487
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO^2 Gate Dielectrics,2003
- Author(s)
  K.Kita et al.
- Journal Title
  
  Extended Abstracts of 2002 International Conference on Solid State Devices and Materials 2003
  
  Pages: 292-293
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement2002
- Author(s)
  K.Kita M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst.Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 66-67
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New Method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement2002
- Author(s)
  K.Kita et al.
- Journal Title
  
  Extended Abstracts of 2002 International Conference on Solid State Devices and Materials 2002
  
  Pages: 66-67
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 特許2005
- Inventor(s)
  鳥海明, 喜多浩之, 富田一行, 山本芳樹
- Industrial Property Rights Holder
  国立大学法人東京大学
- Filing Date
  2005-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 半導体装置及びその製造方法2004
- Inventor(s)
  鳥海明, 喜多浩之
- Industrial Property Rights Holder
  国立大学法人東京大学
- Industrial Property Number
  2004-250393
- Filing Date
  2004-08-30
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 特許2004
- Inventor(s)
  鳥海明, 喜多浩之
- Industrial Property Rights Holder
  国立大学法人東京大学
- Industrial Property Number
  2004-250393
- Filing Date
  2004-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Presentation] ペロブスカイト酸化物エピタキシャル薄膜における微視的および巨視的なバンドオフセットの値とリーク電流の大きさの関係2024
- Author(s)
  田村敦史, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Mechanism of Mechanical Stress-Induced Flat-band Voltage Change in 4H-SiC MOS Structure2024
- Author(s)
  Qiao Chu, Masahiro Masunaga, Akio Shima, and Koji Kita
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiO2との界面付近のβ-Ga2O3 中に酸素欠損が残存する原因の考察2024
- Author(s)
  片桐浩生, 女屋崇, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 絶縁膜中の希土類元素の濃度による4H-SiC/絶縁膜界面への窒素導入現象の変化とその原因の考察2024
- Author(s)
  中島辰海, 女屋崇, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 強誘電体HfxZr1?xO2/TiN の界面反応に起因する分極疲労抑制メカニズムに関する考察2024
- Author(s)
  女屋崇，生田目俊秀，長田貴弘，山下良之，塚越一仁，喜多浩之
- Organizer
  第29回電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 機械的な引張歪みの存在下での分極反転に伴うHfO2薄膜の残留分極値の増大現象とその起源の考察2024
- Author(s)
  井上辰哉, 女屋崇, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Investigating the Mechanism of SiO2/4H-SiC Interface Traps Passivation by Boron Incorporation through FT-IR Analysis of Near-Interface SiO22024
- Author(s)
  Runze Wang, Munetaka Noguchi, Shiro Hino, and Koji Kita
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 高温・低酸素分圧下アニールによる 4H-SiC 中の欠陥生成の FT-IR による検出2024
- Author(s)
  呂楚陽, 女屋崇, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] NOによるSiC/SiO2界面への窒素導入速度論に対する雰囲気効果の理解2024
- Author(s)
  佐々木琉, 女屋崇, 喜多浩之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 絶縁膜への希土類元素の導入による 4H-SiC/絶縁膜界面への窒素導入促進手法の検討2023
- Author(s)
  中島辰海, 女屋崇，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] アニール時の機械的歪み導入によるHfO2薄膜の強誘電相安定化効果2023
- Author(s)
  安田滉, 女屋崇, 喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Origin of Interface Dipole Modulation in Perovskite Oxide Epitaxial Stacks by Monatomic Layer Insertion Characterized by Lateral Force Microscopy2023
- Author(s)
  Atsushi Tamura, Takashi Onaya and Koji Kita
- Organizer
  23rd Conference on Insulating Films on Semiconductors (INFOS2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] The Influence of Boron Concentration on the Reduction of SiO2/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability2023
- Author(s)
  Runze Wang, Munetaka Noguchi, Hiroshi Watanabe, and Koji Kita
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] NO アニールによる 4H-SiC/SiO2界面への窒素導入反応における酸素分圧の影響の理解2023
- Author(s)
  佐々木琉, 女屋崇，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Effect of Oxygen Partial Pressure on Nitridation Kinetics at 4H-SiC/SiO2 Interface Using NO Annealing2023
- Author(s)
  Ryu Sasaki, Takashi Onaya, and Koji Kita
- Organizer
  2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 機械的な引張歪みの存在下での分極反転に伴うHfO2薄膜の残留分極値の増大現象とその歪み解放後の緩和現象2023
- Author(s)
  井上辰哉，女屋崇，喜多浩之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Structural Analysis of Boron Incorporated SiO2/4H-SiC MOS Interface with Reduced Trap Density2023
- Author(s)
  Runze Wang, Munetaka Noguchi, Shiro Hino, and Koji Kita
- Organizer
  2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiO2 成膜とアニールによる β-Ga2O3 表面近傍の酸素欠損の変化の検討2023
- Author(s)
  片桐浩生, 女屋崇，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 界面形成手法によるSiO2/β-Ga2O3(001)バンドアライメントの違いの考察2023
- Author(s)
  武田大樹、女屋崇、生田目俊秀、喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Manipulation of Local Band Alignment Distribution by Controlling the Stacking Sequence in Dipole Layer at Perovskite Oxide Interface Characterized by Conductive AFM2023
- Author(s)
  Atsushi Tamura, Takashi Onaya, and Koji Kita
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Improvement of Fatigue Properties of Ferroelectric HfxZr1-xO2 Thin Films Using Surface Oxidized TiN Bottom Electrode2023
- Author(s)
  T. Onaya, T. Nabatame, T. Nagata, Y. Yamashita, K. Tsukagoshi, Y. Morita, H. Ota, S. Migita, and K. Kita
- Organizer
  54th IEEE Semiconcuctor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Comparative Study on Local Lattice Distortion of 4H-SiC Surface Induced by Thermal Oxidation and Annealing in Ar Ambient2023
- Author(s)
  Chuyang Lyu, Takashi Onaya, and Koji Kita
- Organizer
  2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Remnant Polarization Enhancement in Ferroelectric HfO2 Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching2023
- Author(s)
  Tatsuya Inoue, Takashi Onaya, and Koji Kita
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET2023
- Author(s)
  Qiao Chu, Masahiro Masunaga, Akio Shima, and Koji Kita
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] ペロブスカイト酸化物エピタキシャル界面への原子層挿入による積層順序制御効果の検証2023
- Author(s)
  田村敦史, 喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 機械的な引張歪みの存在下での分極反転に伴うHfO2薄膜の残留分極値の増大の実証2023
- Author(s)
  井上辰哉, 女屋崇, 喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] N2雰囲気での高温窒化プロセスと O2雰囲気での低温アニール処理の組み合わせによる4H-SiC/SiO2界面品質の向上2023
- Author(s)
  Tianlin Yang, Takashi Onaya and Koji Kita
- Organizer
  応用物理学会先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-HfxZr1-xO2/TiN Interface Reaction During Field Cycling2023
- Author(s)
  Takashi Onaya, Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita, Kazuhito Tsukagoshi, and Koji Kita
- Organizer
  2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Impact of ALD-ZrO2 nucleation layers on leakage current properties and dielectric constant of ferroelectric HfxZr1-xO2 thin films2023
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Kazuhito Tsukagoshi, and Koji Kita
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Low-temperature post nitridation O2 annealing to reduce the fixed charge density while maintaining the high SiC surface N density2023
- Author(s)
  Tianlin Yang, Takashi Onaya, and Koji Kita
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Considerations on SiC Surface Oxidation and Nitridation Reactions to Form SiO2/4H-SiC MOS Interface for Advanced Power Devices2023
- Author(s)
  Koji Kita
- Organizer
  The 9th International Conference on Science and Technology, Universitas Gadjah Mada Annual Scientific Conferences Series (ICST UGM 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 4H-SiC/ゲート絶縁膜界面への窒素導入プロセスの低温化の検討2023
- Author(s)
  佐々木琉、中島辰海、女屋崇、喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Understandings of the kinetics of N-incorporation and N-removal reactions for the 4H-SiC surface using the SiC consumption rate as an essential factor2023
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing2023
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  23rd Conference on Insulating Films on Semiconductors (INFOS2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiO2/β-Ga2O3界面形成条件が与えるβ-Ga2O3表面近傍の酸素欠損量の違いの検討2023
- Author(s)
  片桐浩生，女屋崇，喜多浩之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Possible Origins of Mechanical Stress-Induced Anomalous Impact on Threshold Voltage of 4H-SiC (0001) MOSFET2023
- Author(s)
  Qiao Chu, Masahiro Masunaga, Akio Shima, and Koji Kita
- Organizer
  2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Design of Surface Oxidation and Nitridation Reactions on 4H-SiC for the Advanced SiC Gate Stack Formation Processes2023
- Author(s)
  Koji Kita
- Organizer
  244th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiO2/β-Ga2O3 MOS特性とその熱処理による変化2022
- Author(s)
  喜多浩之
- Organizer
  第83回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiC表面の酸化と窒化によるMOS界面形成の科学2022
- Author(s)
  喜多浩之
- Organizer
  第27回電子デバイス界面テクノロジー研究会ー材料・プロセス・デバイス特性の物理ー
- Invited
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Correlation between Dipole Layer Formation and Surface Terminating Crystal Face in Perovskite Oxide Epitaxial Stacks Clarified by Lateral Force Microscopy2022
- Author(s)
  Atsushi Tamura and Koji Kita
- Organizer
  2022 International Conferene on Solid State Devices and Materials (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 照射光の波長と測定温度によるC-V特性の違いを利用したSiC MOS界面近傍の深い準位の評価2022
- Author(s)
  長谷川凛平，喜多浩之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Investigation of SiO2/β-Ga2O3 (001) band alignment considering the effects of interface dipole layer formation2022
- Author(s)
  Daiki Takeda and Koji Kita
- Organizer
  The 4th International Woarkshop on Gallium Oxide and Its Related Materials (IWGO2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiO2/β-Ga2O3(001)のバンドダイアグラムの成膜後アニールによる変化の検討2022
- Author(s)
  武田大樹，喜多浩之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO2 structure in high-temperature N (+O ) annealing2022
- Author(s)
  Tianlin Yang，喜多浩之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 酸素アニールを用いた酸化ガリウムのMOS界面形成プロセス2022
- Author(s)
  喜多浩之，武田大樹
- Organizer
  ワイドギャップ半導体学会第9回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Kinetic Study of SiC Surface Nitridation in N2 Ambient with Simultaneous Oxidation in Passive and Active Oxidation Modes2022
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  The 9th International Conference on Control of Semiconductor Interfaces (ISCSI-IX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 4H-SiC surface nitridation kinetic model in high temperature N2 (+O2) annealing focusing on the effects of annealing temperature and O2 partial pressure2022
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  2022 International Conferene on Solid State Devices and Materials (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] SiC表面の酸化と窒化によるMOS界面形成の科学2022
- Author(s)
  喜多浩之
- Organizer
  第27回電子デバイス界面テクノロジー研究会ー材料・プロセス・デバイス特性の物理ー
- Invited
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] ペロブスカイト酸化物界面におけるダイポール層LaAlO3の原子層積層順序とダイポール方向の相関の水平力顕微鏡による検証2022
- Author(s)
  田村敦史，喜多浩之
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Clarification of Possible Factors to Determine Flat-Band Voltage in 4H-SiC Gate Stacks with Nitrogen Passivation Processes2022
- Author(s)
  Koji Kita
- Organizer
  241st ECS Meeting, in Symposium D02 "Dielectrics for Nanosystems 9: Materials Science, Processing, Reliability, and Manufacturing"
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 照射光の波長と測定温度によるC-V特性の違いを利用したSiC MOS界面近傍の深い準位の評価2022
- Author(s)
  長谷川凛平，喜多浩之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Study on the Electrical Characteristics and Band Diagrams of Ga2O3 MOS Gate Stacks2022
- Author(s)
  Koji Kita
- Organizer
  241st ECS Meeting, in Symposium D01 "Solid State Devices, Materials and Sensors: In Memory of Dolf Landheer"
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 高温アニールとγ線照射による4H-SiC/SiO2窒化界面構造の変化の違い2021
- Author(s)
  佐俣勇祐, 増永昌弘, 島明生, 桑名諒, 喜多浩之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 低温化によるキャリア捕獲時定数の増大に着目した4H-SiC MOS界面近傍欠陥の評価手法の検討2021
- Author(s)
  長谷川凛平, 喜多浩之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks2021
- Author(s)
  Koji Kita
- Organizer
  240th ECS Meeting, in Symposium G02 "Semiconductor Process Integration"
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Characterization of Deep Traps in Near-Interface Oxide of Widegap MOS Interfaces Revealed by Light Irradiation and Temperature Change2021
- Author(s)
  Rimpei Hasegawa and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation2021
- Author(s)
  Atsushi Tamura, Seungwoo Jang, Young-Geun Park, Hanjin Lim, and Koji Kita
- Organizer
  22th Conference on Insulating Films on Semiconductors (INFOS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Unexpected Fixed Charge Generation by an Additional Annealing after Interface Nitridation Processes at SiO2/4H-SiC (0001) MOS Interfaces2021
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] キャップ層を用いたアニールによるHfO2膜中歪み操作と強誘電相安定化効果の面内および面外方向へのX線回折を用いた評価2021
- Author(s)
  籾山陽紀, Siri Nittayakasetwat, 喜多浩之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] β-Ga2O3電子構造のUPS評価に基づくMOS界面固定電荷密度の正確な抽出2021
- Author(s)
  武田大樹, 喜多浩之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Positive VFB shift of 4H-SiC MOS capacitors induced by Al2O3/SiO2 interface dipole layer formation2021
- Author(s)
  Taehyeon Kil, Munetaka Noguchi, Hiroshi Watanabe, and Koji Kita
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces2021
- Author(s)
  Tae-Hyeon Kil, Munetaka Noguchi, Hiroshi Watanabe and Koji Kita
- Organizer
  22th Conference on Insulating Films on Semiconductors (INFOS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Positive threshold voltage shift of 4H-SiC MOSFET induced by Al2O3 /SiO2 interface dipole layer formation2021
- Author(s)
  Tae-Hyeon Kil, Munetaka Noguchi, Hiroshi Watanabe and Koji Kita
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] 予め高温N2+H2アニールを施した4H-SiC表面へのMOS形成プロセス2021
- Author(s)
  佐賀利浩, 喜多浩之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Considerations on competition between SiC surface nitridation and etching at SiO2/SiC interface induced by high-temperature N2 annealing2021
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Evidence of Ferroelectric HfO2 Phase transformation Induced by Electric Field Cycling Observed at a Macroscopic Scale2021
- Author(s)
  Siri Nittakayasetwat and Koji Kita
- Organizer
  22th Conference on Insulating Films on Semiconductors (INFOS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Characterization of SiO2/β-Ga2O3(001) MOS Band Diagram with Photoelectron Spectroscopy for the Correct Evaluation of Interface Fixed Charge Density2021
- Author(s)
  Daiki Takeda and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Characterization of Deep Traps in Near-Interface Oxide of Widegap MOS Interfaces Revealed by Light Irradiation and Temperature Change2021
- Author(s)
  Rimpei Hasegawa and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO2 interface in N2 and N2 /H2 ambient2021
- Author(s)
  Tianlin Yang and Koji Kita
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Direct Evidence of Electric Field driven Phase Transformation in the Waking-up Process of Ferroelectric HfO2 Characterized by Conventional X-ray Diffraction2021
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Manipulation of Interfacial Dipole Effect at Perovskite Oxide Heteroepitaxial Interface by Stacking Sequence of Monatomic Layers in LaAlO32021
- Author(s)
  Atsushi Tamura, Cheol Hyun An, Hanjin Lim, and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550
[Presentation] Unexpected Fixed Charge Generation by an Additional Annealing after Interface Nitridation Processes at SiO2/4H-SiC (0001) MOS Interfaces2021
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics2020
- Author(s)
  Qin Mao and Koji Kita
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Consideration on SiO2/4H-SiC Band Alignment Modulation by NO Annealing2020
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Organizer
  acific Rim Meeting on Electrochemical and Solid State Science (PRiME2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type well2020
- Author(s)
  Qiao Chu, Adhi Dwi Hatmanto, Masahiro Masunaga, Akio Shima and Koji Kita
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Si 面・C 面・a 面上に形成された 4H-SiC/SiO2窒化界面構造の安定性の比較2020
- Author(s)
  佐俣勇祐，喜多浩之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 光照射及び低温化により生じるヒステリシスの違いによって検出されるNO-POAと水蒸気POAを行ったp型SiC MOS界面特性の違い2020
- Author(s)
  長谷川凛平，喜多浩之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] ウェットPOA処理を用いて形成するp型4H-SiC (0001) MOS界面特性に与える酸素分圧及び温度による影響の考察2020
- Author(s)
  小柳潤，喜多浩之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 少量のCO共存下で進行するO2及びH2Oによる熱酸化に伴う酸化膜中欠陥形成機構の考察2020
- Author(s)
  劉洪波，喜多浩之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Al2O3/SiO2界面ダイポール層強度の温度依存性と各酸化物の密度の相関2020
- Author(s)
  濱口高志，喜多浩之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Relationship between the Waking-up Effect and Structural Distortion in Ferroelectric HfO2 characterized by X-ray Diffraction2020
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 水蒸気アニールがp型SiC MOSキャパシタのDitとVFB安定性に与える効果の雰囲気中の酸素分圧による違い2019
- Author(s)
  小柳潤，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 結晶面の異なる 4H-SiC MOS 界面からのArアニールによるN原子脱離過程2019
- Author(s)
  佐俣勇祐，喜多浩之
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] NO-POAによるSiO2/4H-SiC MOSキャパシタの異常なバンドアライメント変化とその起源2019
- Author(s)
  Tae-Hyeon Kil，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Similarity and Difference of the Impact of Ion Implantation and Thermal Oxidation on the Lattice Structure of 4H-SiC Surfaces2019
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 低温H2O-POAとH2-POAの組合わせによる4H-SiC pチャネルMOSFETの特性向上2019
- Author(s)
  小柳潤，喜多浩之
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 異なる結晶面上の4H-SiC/SiO2窒化界面からのArアニールによるN原子脱離過程2019
- Author(s)
  佐俣勇祐，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Improvement of Channel Characteristics of 4H-SiC PMOSFET by Low Temperature Wet-POA with H2-annealing2019
- Author(s)
  Jun Koyanagi and Koji Kita
- Organizer
  2019 International Conference on Silicon Carbide and Related Materials (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Investigation on the Factors to Determine the Efficiency of Energy Harvesting Method with Multilayered Dielectric Capacitors in Temperature Fluctuating Environment2019
- Author(s)
  Takashi Hamaguchi and Koji Kita
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 温度変動に伴う酸化膜キャパシタの蓄積電荷量の変動に対する界面ダイポール層の温度依存性の寄与の検証2019
- Author(s)
  濱口高志，喜多浩之
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Physical Analysis of Remained Oxidation Byproducts as the Origins of Lattice Distortion at 4H-SiC Surface2019
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Experimentally Observed Temperature Induced Changes in Interface Dipole Layer Strengths in high‐k/SiO2 and high‐k/high‐k Systems2019
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Organizer
  2019 International Conference on Insulating Films on Semiconductors (INFOS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Suppression of VFB Instability of p-type 4H-SiC (0001) MOS capacitor by H2O-POA without O2 Introduction2019
- Author(s)
  Jun Koyanagi and Koji Kita
- Organizer
  2019 International Workshop on Dielectric Thin Films for Future Electron Devies: Science and Technology (IWDTF2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Formation of Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Manipulate Its Strength2019
- Author(s)
  Koji Kita
- Organizer
  SEMI Technology Symposium, S2 Advanced Materials & Technologies for Emerging Devices, SEMICON Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts2019
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Significant effects on SiO2/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes2019
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] An anomalous negative shift of flat-band voltage of NO annealed SiO2/4H-SiC MOS capacitors2019
- Author(s)
  Tae-Hyeon Kil, Atsushi Tamura, and Koji Kita
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Investigation of Thermal Oxidation-induced Lattice Distortion at the Surface of 4H-SiC and Its Origins2019
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2019 International Workshop on Dielectric Thin Films for Future Electron Devies: Science and Technology (IWDTF2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Anomalous band alignment change of SiO2/4H-SiC MOS capacitors induced by NO-POA and its possible origin2019
- Author(s)
  Tae-Hyeon Kil and Koji Kita
- Organizer
  2019 International Conference on Silicon Carbide and Related Materials (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Anomalous Change of Band Alignment of SiO2/4H‐SiC (0001) Stacks Induced by the Nitrogen Introduction to the Interface2019
- Author(s)
  Tae-Hyeon Kil, Atsushi Tamura and Koji Kita
- Organizer
  2019 International Conference on Insulating Films on Semiconductors (INFOS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] SiO2/4H-SiC界面窒化後のH2OアニールがMOSFET特性に与える効果2019
- Author(s)
  西田水輝，喜多浩之
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 4H-SiCの水蒸気酸化反応の特徴とそのMOS界面特性に与える効果の理解2019
- Author(s)
  喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Difference of Temperature Effects on Al2O3/SiO2 Interface Dipole Layer Strength by SiO2 Growth Methods2019
- Author(s)
  Takashi Hamaguchi and Koji Kita
- Organizer
  2019 International Workshop on Dielectric Thin Films for Future Electron Devies: Science and Technology (IWDTF2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 温度変動による界面ダイポール層強度の変化の環境発電への応用可能性の検討2018
- Author(s)
  濱口高志，喜多浩之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Al2O3/SiO2, MgO/SiO2, MgO/Al2O3各界面におけるダイポール起因のVFBシフトの温度依存性の違い2018
- Author(s)
  濱口高志，喜多浩之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Study on interface dipole layer strength change by temperature in high-k/SiO2and high-k/high-k systems and its possible origin2018
- Author(s)
  Takashi Hamaguchi, Siri Nittayakasetwat, and Koji Kita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Recovery of Local Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) by Post-Oxidation Annealing2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Photo-assisted CV測定で評価するNITにみるNO-POAとwet-POA界面特性の違い2018
- Author(s)
  西田水輝，作田良太，平井悠久，喜多浩之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Introduction and Recovery of Thermal-oxidation-induced Lattice Distortion at the Surface of 4H-SiC (0001)2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures / 26th International Colloquium on Scanning Probe Microscopy (ACSIN-14/ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Consideration on the effective dipole length in Al2O3/SiO2 and Y2O3/SiO2 interface dipole layers via temperature dependences of their dipole strength2018
- Author(s)
  Siri Nittayakasetwat, and Koji Kita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Reduction of SiO2/4H-SiC Interface Defects by H2O-PostNitridation-Annealing2018
- Author(s)
  Mizuki Nishida, Ryota Sakuta, Hirohisa Hirai, and Koji Kita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Thermal-oxidation-induced lattice distortion at 4H-SiC (0001) surface and its recovery by Ar annealing2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Introduction and recovery of local lattice distortion at the surface of thermally-oxidized 4H-SiC (0001)2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2018 European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Photo-assisted CV測定で評価するNITにみるNO-POAとwet-POA界面特性の違い2018
- Author(s)
  西田水輝，作田良太，平井悠久，喜多浩之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation2018
- Author(s)
  Koji Kita, Mizuki Nishida, Ryota Sakuta, and Hirohisa Hirai
- Organizer
  2018 Americas International Meeting on Electrochemistry and Solid State Science (AiMES2018), ECS & SMEQ Joint International Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 熱酸化により4H-SiC（0001）表面に誘起される格子歪みの原因に関する動力学的な考察2018
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  第5回先進パワー半導体分科会講演会
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Significant Structural Distortion in the Surface Region of 4H-SiC Induced by Thermal Oxidation and Recovered by Ar Annealing2018
- Author(s)
  Koji Kita and Adhi Dwi Hatmanto
- Organizer
  2018 Americas International Meeting on Electrochemistry and Solid State Science (AiMES2018), ECS & SMEQ Joint International Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] 窒化処理後に低温ウェット酸化処理をした4H-SiC MOS構造における界面準位密度とウェット酸化膜成長量の関係性2018
- Author(s)
  作田良太，西田水輝，平井悠久，喜多浩之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Significant Improvement of p-type 4H-SiC MOS Interface Characteristics by Low Temperature Post-Oxidation Annealing in H2O + O2 Ambient2018
- Author(s)
  Jun Koyanagi, Mizuki Nishida, and Koji Kita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] Combination of NO-annealing with H2O-annealing at low temperature to reduce SiO2/4H-SiC (0001) interface defect density2018
- Author(s)
  Mizuki Nishida, Ryota Sakuta, Hirohisa Hirai, Koji Kita
- Organizer
  2018 European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03771
[Presentation] SiC MOSキャパシタにおけるバイアス印加時のVFB安定性に低温ウェット酸化が与える効果2018
- Author(s)
  小柳潤，平井悠久，喜多浩之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Temperatures Induced Anomalous Change in Effective Charges of Al2O3/SiO2 Interface Dipole Layer2017
- Author(s)
  Siri Nittayakasetwat and Koji Kita
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices (2017 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 異種元素導入（La, N）による4H-SiC上のSiO(N)成長速度と元素分布の変化2017
- Author(s)
  作田良太，平井悠久，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Kinetics of Enhanced Oxide Growth on 4H-SiC in O2 and H2O Coexisting Ambient2017
- Author(s)
  Kei Ishinoda and Koji Kita
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Investigation of Origins of the Critically Different MOS Interface Characteristics between Dry-oxidized and Wet-Oxidized Silicon Carbide2017
- Author(s)
  Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama and Kei Ishinoda
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Oxidation-induced Lattice Distortion at 4H-SiC (0001) Surface Characterized by Surface Sensitive In-plane X-ray Diffractometry2017
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Difference of Near-Interface SiO2 Structures between O2-oxidation and H2O-oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics2017
- Author(s)
  Koji Kita, Hirohisa Hirai, and Kei Ishinoda
- Organizer
  232nd The Electrochemical Society (ECS) Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC m面上にドライ+ウェット酸化プロセスにより形成されたMOS界面の界面準位密度および電気的ストレスに対する安定性のウェット酸化条件による変化2017
- Author(s)
  黒山滉平，平井悠久，山本建策，林真理子，細川徳一，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Consideration on the interfacial dipole layer formation at non-SiO2 oxide interfaces in the examples of MgO/Al2O3 and HfO2/Al2O32017
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 4H-SiC MOSキャパシタにおける遅い欠陥準位の光照射により観測されるC-V特性ヒステリシス解析による評価2017
- Author(s)
  西田水輝，喜多浩之
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Lattice Distortion Existing Locally on the Surface of Thermally Oxidaized 4H-SiC (0001)2017
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC MOS界面特性の制御のための熱酸化プロセスの設計2017
- Author(s)
  喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Investigation of Origins of the Critically Different MOS Interface Characteristics between Dry-oxidized and Wet-Oxidized Silicon Carbide2017
- Author(s)
  Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama and Kei Ishinoda
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 4H-SiC MOS界面特性の制御のための熱酸化プロセスの設計2017
- Author(s)
  喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，神奈川県横浜市
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 希土類元素存在下でのSiC/SiO2界面での酸窒化の促進2017
- Author(s)
  作田良太，平井悠久，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Control of thermal oxidation of 4H-SiC (0001) to enhance MOSFET channel mobility by tuning partial pressures of oxidants (O2 and H2O) and oxidation temperature2017
- Author(s)
  Hirohisa Hirai, Kei Ishinoda and Koji Kita
- Organizer
  48th IEEE Semiconductor Interface Specialists Conference (SISC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Change of SiO(N) Thermal Growth Kinetics and Element Distribution on 4H-SiC by Foreign Elements (La and N) Introduction2017
- Author(s)
  Ryota Sakuta, Hirohisa Hirai and Koji Kita
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices (2017 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC熱酸化に伴う基板表面領域における酸素原子侵入とそれに対する酸化条件の影響2017
- Author(s)
  平井悠久，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Al2O3/SiO2界面のダイポール層の生成・抑制の制御 -界面の組成急峻性の与える効果-2017
- Author(s)
  鎌田啓伸，喜多浩之
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 酸化レートの変化からみた4H-SiC Si面ウェット酸化雰囲気中に共存する酸素の役割2017
- Author(s)
  石野田圭，平井悠久，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] ダイポール層の選択的発現を利用したAl2O3/SiO2の繰り返し構造における大きなフラットバンド電圧シフト2017
- Author(s)
  鎌田啓伸，喜多浩之
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― 第22回研究会
- Place of Presentation
  東レ総合研修センター，静岡県三島市
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Interface-Selective Low-Temperature Wet-O2 Annealing to Enhance 4H-SiC (0001) MOSFET Mobility by Improving Near Interface SiO2 Quality2017
- Author(s)
  Hirohisa Hirai, Kei Ishinoda and Koji Kita
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Al2O3/SiO2界面のダイポール層の発現と抑制を決定づける因子の実験的検討2017
- Author(s)
  鎌田啓伸，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] In-Plane X-ray Diffractometry Study on Thermal Oxidation-induced Anomalous Lattice Distortion at 4H-SiC Surfaces2017
- Author(s)
  Adhi Dwi Hatmanto and Koji Kita
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices (2017 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Control Their Formation2017
- Author(s)
  Koji Kita, Hironobu Kamata, and Jiayang Fei
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Opportunity for dipole layer formation at an non-SiO2 dielectric interface - MgO/Al2O32017
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] O2共存H2O雰囲気での界面近傍酸化膜成長による4H-SiC MOSFET移動度の向上2017
- Author(s)
  平井悠久，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Anomalous temperature dependence of dipole layer strength at the Al2O3/SiO2 interface2017
- Author(s)
  iri Nittayakasetwa, Hironobu Kamata and Koji Kita
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Interface-Selective Low-Temperature Wet-O2 Annealing to Enhance 4H-SiC (0001) MOSFET Mobility by Improving Near Interface SiO2 Quality2017
- Author(s)
  Hirohisa Hirai, Kei Ishinoda and Koji Kita
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Opportunity of dipole layer formationat non-SiO2 dielectric interfaces in two cases: multi-cation systems and multi-anion systems2017
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 4H-SiC C面上MOS界面特性のウェット酸化による酸化膜成長量依存性にみられる界面欠陥減少過程と膜中欠陥変化過程の速度的差異2017
- Author(s)
  平井悠久，喜多浩之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Evaluation of Deep Trap and Near-interface Oxide Trap Density at SiO2/SiC Interface by Photo-assisted CV Measurement2017
- Author(s)
  Mizuki Nishida, Hirohisa Hirai and Koji Kita
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices (2017 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Demonstration of Large Flatband Voltage Shift by Designing Al2O3/SiO2 Laminated Structures with Multiple Interface Dipole Layers2017
- Author(s)
  Koji Kita and Hironobu Kamata
- Organizer
  232nd The Electrochemical Society (ECS) Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Demonstration of a large Vfb shift induced by selectively formed multiple dipole layers in Al2O3/SiO2 laminated dielectric stacks2017
- Author(s)
  Hironobu Kamata and Koji Kita
- Organizer
  48th IEEE Semiconductor Interface Specialists Conference (SISC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Opportunities to Design Thermal Oxidation and Post-OxidationProcesses to Control 4H-SiC MOS Interface Characteristics2016
- Author(s)
  Koji Kita
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場，茨城県つくば市
- Year and Date
  2016-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] ウェット酸化雰囲気に共存する酸素の効果の理解に基づく4H-SiC 各結晶面のウェット酸化プロセスの設計2016
- Author(s)
  平井悠久，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第３回講演会
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Consideration on the Origin of Dipole Layer Formation at Dielectric Interfaces with Different Anions2016
- Author(s)
  Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, Koji Kita
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-15H03979
[Presentation] Design of Al2O3/SiO2 Laminated Stacks with Mutiple Interface Dipole Layers to Induce Large Flatband Voltage Shifts of MOS Capacitors2016
- Author(s)
  Hironobu Kamata and Koji Kita
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場，茨城県つくば市
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Opportunities to Design Thermal Oxidation and Post-Oxidation Processes to Control 4H-SiC MOS Interface Characteristics2016
- Author(s)
  Koji Kita
- Organizer
  International Conference of Solid State Device and Materials 2016
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2016-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Enhancement of voltage-induced magnetic anisotropy change by preventing ferromagnetic surface oxidation in CoFeB/Al2O3 and CoFeB/ZrO2 stacks2016
- Author(s)
  Ryusuke Oishi and Koji Kita
- Organizer
  2016 Joint MMM -Intermag Conference
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] Impacts on 4H-SiC MOSFET Mobility of High Temperatue Annealing in Oxidizing Or Inert Ambient before Gate Oxide Growth2016
- Author(s)
  Hirohisa Hirai and Koji Kita
- Organizer
  International Conference of Solid State Device and Materials 2016
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Study on Dipole Layer Formation and its Origin at Al2O3/AlFxOy and Al2O3/AlNxOy Multi-anion Dielectric Interfaces by considering Anion Areal Density and Valence Differences2016
- Author(s)
  Jiayang Fei, Ryota Kunugi, Takanobu Watanabe and Koji Kita
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場，茨城県つくば市
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] Study on the Guideline to Control Dry and Wet Oxidation Conditions to Improve 4H-SiC (000-1) C-face MOS Interface Characteristics2016
- Author(s)
  Hiroyuki Kajifusa and Koji Kita
- Organizer
  International Conference of Solid State Device and Materials 2016
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 酸化性および還元性雰囲気におけるゲート酸化膜成長前の高温熱処理がSiC MOSFET移動度に与える影響2016
- Author(s)
  平井悠久，喜多浩之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟県新潟市）
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Control of SiC thermal oxidation processes for the improvement of MOSFET performance2016
- Author(s)
  Koji Kita, Hirohisa Hirai, Yuki Fujino and Hiroyuki Kajifusa
- Organizer
  229th Meeting of the Electrochemical Society
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2016-05-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC MOSFET移動度に対する熱酸化による基板特性劣化とダメージ層除去効果の競合2016
- Author(s)
  平井悠久，作田良太，喜多浩之
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Impact of Sacrificial Cosumption of Substrate By Thermal Oxidation on Electron Mobility of 4H-SiC MOSFETs2016
- Author(s)
  Koji Kita and Hirohisa Hirai
- Organizer
  Pacific Rim Meeting on Electrochemcal and Solid State Science / 230th ECS Meeting
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC m 面ウェット酸化によるMOS 界面の電気特性と界面近傍SiO2 微視的構造の特徴の相関2016
- Author(s)
  黒山滉平，平井悠久，山本建策，林真理子，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第３回講演会
- Place of Presentation
  つくば国際会議場，茨城県つくば市
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 4H-SiC MOSキャパシタ界面近傍における電子と正孔の膜中トラップ密度分布の比較2016
- Author(s)
  藤野雄貴，喜多浩之
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 界面近傍のSiO2微視的構造とMOS界面の電気特性から見た4H-SiC m面のウェット酸化により形成されたMOS界面の特徴2016
- Author(s)
  黒山滉平，平井悠久，山本建策，林真理子，喜多浩之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] ウェット酸化条件の制御による4H-SiC C面上MOS界面特性への影響2016
- Author(s)
  梶房裕之，喜多浩之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Consideration on the Origin of Dipole Layer Formation at Dielectric Interfaces with Different Anions (Fluorine, Oxygen and Nitrogen)2016
- Author(s)
  Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, and Koji Kita
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K14227
[Presentation] 4H-SiC C面における高温・低O2分圧下ドライ酸化によるMOS界面特性の制御2016
- Author(s)
  梶房裕之，喜多浩之
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC C 面(000-1)のドライ及びウェット酸化条件によるMOS 界面特性への影響の理解2016
- Author(s)
  梶房裕之，喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第３回講演会
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] 4H-SiC m面上に形成された熱酸化膜の界面近傍における微視的構造の特徴の赤外分光法による解析2016
- Author(s)
  黒山滉平，平井悠久，山本建策，金村髙司，喜多浩之
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Different effects between Al- and Zr-insertion on voltage control of PMA at CoFeB/oxide interface2016
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] Anomalous Flatband Voltage Shift of AlFxOy/Al2O3 MOS Capacitors: Dipole Layer Formation at Dielectric Interfaces with Different Anions2016
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15H03979
[Presentation] 4H-SiCの熱酸化過程の理解に基づくMOS特性の制御とその課題2016
- Author(s)
  喜多浩之
- Organizer
  第35回電子材料シンポジウム(EMS-35)
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県守山市）
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures2015
- Author(s)
  Yuki Fujino and Koji Kita
- Organizer
  2015 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  札幌コンベンションセンター（北海道札幌市）
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] ４H-SiC/SiO2界面に対する高温ドライ酸化および高温希釈水素POAの効果2015
- Author(s)
  平井悠久, 喜多浩之
- Organizer
  応用物理学会先進パワー半導体分科会第2回講演会
- Place of Presentation
  大阪国際交流センター（大阪府大阪市）
- Year and Date
  2015-11-09
- Invited
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements2015
- Author(s)
  Yuki Fujino and Koji Kita
- Organizer
  228th Meeting of the Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics2015
- Author(s)
  Kosuke Shimura, Ryota Kunugi, Atsushi Ogura, Shinichi Satoh, Jiayang Fei, Koji Kita, and Takanobu Watanabe
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center, Sapporo
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03979
[Presentation] Effects of High-Temperature Diluted-H2 Annealing on Effective Mobility of 4H-SiC MOSFETs with Thermally-Grown SiO22015
- Author(s)
  Hirohisa Hirai and Koji Kita
- Organizer
  2015 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  札幌コンベンションセンター（北海道札幌市）
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Removal of Near-Interface Oxide Traps at SiO2/SiC Interface by Post-Oxidation Annealing in Reducing Ambient2015
- Author(s)
  Hiroyuki Kajifusa and Koji Kita
- Organizer
  2015 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  札幌コンベンションセンター（北海道札幌市）
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Extraction of electron effective mobility of 4H‐SiC MOS inversion channel with thermally‐grown SiO2 by high‐frequency split C‐V technique2015
- Author(s)
  Hirohisa Hirai and Koji Kita
- Organizer
  2015 Int. Conf. on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Effects of Chemical States at Interface on Electric Field Effects of CoFeB/MOx stacks2015
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] Combination of High‐temperature Oxidation and Low‐temperature O2‐Annealing toward Nearly‐Ideal MOS Characteristics on 4H‐SiC (0001)2015
- Author(s)
  Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai
- Organizer
  2015 Int. Conf. on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03969
[Presentation] Understanding on the Impact of Interface Reactions on Dipole Strengths at MgO/SiO2 and Y2O3/SiO2 Interfaces2015
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center, Sapporo
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03979
[Presentation] Consideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO2 Interfaces2015
- Author(s)
  Jiayang Fei and Koji Kita
- Organizer
  2015 International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology (IWDTF 2015)
- Place of Presentation
  日本科学未来館
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03979
[Presentation] Voltage-Induced Nonvolatile Change of Magnetic Anisotropy of CoFeB Ultrathin Films Stacked With Multivalent Oxides2013
- Author(s)
  Jiro Koba and Koji Kita
- Organizer
  224th ECS Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Internal Photo-emission 法によるGeO2/Ge 界面における伝導帯バンドオフセットの決定2013
- Author(s)
  張文峰, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第60回春季応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学，厚木
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Characterization of VoltageControl of Magnetic Anisotropy up to 8MV/cm by Using Substrate BiasStructure2013
- Author(s)
  J. Koba, T. Kuribara, N. Miyakawa, andK. Kita
- Organizer
  12th Joint MMM/IntermagConference, BF-05
- Place of Presentation
  米国 Chicago 市
- Year and Date
  2013-01-13
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] 「Internal Photo-emission法によるGeO/Ge 界面における伝導帯バンドオフセットの決定」2013
- Author(s)
  張文峰, 西村知紀, 長汐晃輔, 喜多浩之,鳥海明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(厚木)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] TiOx/CoFeB/Taスタックの磁気異方性の電界による不揮発な制御の実証2013
- Author(s)
  古場治朗，喜多浩之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス，京都府京田辺市
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Characterization of Voltage Control of Magnetic Anisotropy Up to 8 MV/cm by Using Substrate Bias Structure2013
- Author(s)
  Jiro Koba, Nartuo Miyakawa, and Koji Kita
- Organizer
  12th Joint MMM/Intermag Conference
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Voltage-Induced Nonvolatile Change of Magnetic Anisotropy in TiOx/CoFeB/Ta2013
- Author(s)
  Jiro Koba and Koji Kita
- Organizer
  2013 International Conference on Solid State Device and Materials
- Place of Presentation
  ヒルトン福岡シーホーク，福岡県福岡市
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Enhanced Voltage Control of Magnetic Anisotropy of Ta/CoFeB/MgO by Suppression of Ta Diffusion and CoFeB Surface Oxidation2013
- Author(s)
  N. Miyakawa, D. C. Worledge, and K. Kita
- Organizer
  12th Joint MMM/Intermag Conference
- Place of Presentation
  シカゴ, 米国
- Year and Date
  2013-01-15
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] MOx/CoFeB 界面磁気異方性の様々なMに対して普遍的な電圧応答2013
- Author(s)
  栗原隆帆,古場治朗,宮川成人,喜多浩之
- Organizer
  第60回応用物理学会春季学術講演会 29a-A8-2
- Place of Presentation
  神奈川工科大学(厚木)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] XPS によるGeO2/Ge 界面の価電子帯バンドオフセットの決定2013
- Author(s)
  張文峰, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第60回春季応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学，厚木
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] MOx/CoFeB界面磁気異方性の様々なMに対して普遍的な電圧応答2013
- Author(s)
  栗原隆帆，古場治朗，宮川成人，喜多浩之
- Organizer
  第60回春季応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学，厚木
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Characterization of Voltage Control of Magnetic Anisotropy Up to 8 MV/cm by Using Substrate Bias Structure2013
- Author(s)
  J. Koba, N. Miyakawa, and K. Kita
- Organizer
  12th Joint MMM/Intermag Conference
- Place of Presentation
  シカゴ, 米国
- Year and Date
  2013-01-15
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] MOX/COFeB界面磁気異方性の様々なMに対して普遍的な電圧応答2013
- Author(s)
  栗原隆帆, 古場治朗, 宮川成人, 喜多浩之
- Organizer
  第60回春季応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学, 厚木
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] 誘電体/COFeB界面の磁気異方性とその電圧応答に与える誘電体中アニオン種の効果2013
- Author(s)
  宮川成人, 栗原隆帆, 喜多浩之
- Organizer
  第60回春季応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学, 厚木
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] 熱処理雰囲気の違いによる結晶化HfO2薄膜相変態速度への影響2012
- Author(s)
  岩井貴雅, 中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] CoFeB表面酸化量による磁気異方性エネルギーの電界応答性の違い2012
- Author(s)
  宮川成人, D.C. Worledge, 喜多浩之
- Organizer
  第73回秋季応用物理学会学術講演会
- Place of Presentation
  松山大学, 松山
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Voltage Control of Magnetic Anisotropy of CoFeB Thin Films Stacked with Various Oxides2012
- Author(s)
  J. Koba, T. Kuribara, N. Miyakawa, and K. Kita
- Organizer
  Int. Conf. of Asian Union of Magnetic Society 2012
- Place of Presentation
  奈良県新公会堂, 奈良
- Year and Date
  2012-10-05
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Challenges and Opportunities in Voltage Control of Magnetic Anisotropy of Ultrathin Ferromagnetic Metals for Future Spintronics2012
- Author(s)
  Koji Kita and D. C. Worledge
- Organizer
  International Conference on Emerging Advanced Nanomaterials
- Place of Presentation
  Brisbane, Australia
- Invited
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Control of Ge/High-kInterface for Ge CMOS Technology2012
- Author(s)
  K. Kita, T. Nishimura, K. Nagashio, andA. Toriumi
- Organizer
  39thConference on the Physics and Chemistryof Surfaces and Interfaces (PCSI-39)(招待講演)(
- Place of Presentation
  米国SantaFe 市
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Challengesand Opportunities in Voltage Control ofMagnetic Anisotropy of UltrathinFerromagnetic Metals for FutureSpintronics2012
- Author(s)
  K. Kita and D. C. Worledge
- Organizer
  International Conferenceon Emerging Advanced Nanomaterials(ICEAN2012)
- Place of Presentation
  オーストラリア,Brisbane 市) 招待講演
- Year and Date
  2012-10-22
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] SiO2/high-k/SiO2/Siゲートスタック構造による界面ダイポール効果の打ち消し-カウンターダイポール効果の実証-2012
- Author(s)
  日比野真也, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] HfO2におけるcubic相からmonoclinic相への結晶相変態過程の速度論的解析2012
- Author(s)
  中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第17回研究会)
- Place of Presentation
  東レ総合研究センター(静岡県)(招待講演)
- Year and Date
  2012-01-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 速度論的考察に基づく良好なSiC/SiO2界面形成2012
- Author(s)
  中坪俊, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy2012
- Author(s)
  Weng F. Zhang, Tomonori Nishimura, Kosuke Nagashio, Koji Kita and Akira Toriumi
- Organizer
  2012 Pacific Rim Meeting on Electrochemical and Solid-State Science
- Place of Presentation
  Honolulou, USA
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] HfO2のcubic相からmonoclinic相への相変態機構に及ぼす酸素の効果2012
- Author(s)
  中嶋泰大, 岩井貴雅, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] ECセル用Ta_2O_5薄膜へのプロトン導入法による導電性の変化2012
- Author(s)
  小橋啓史, 喜多浩之
- Organizer
  電気化学会第79回大会
- Place of Presentation
  浜松アクトシティ(静岡県浜松市)
- Year and Date
  2012-03-31
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] AlN/Ge MISゲートスタックにおける高圧窒素アニールの効果2012
- Author(s)
  田畑俊行, 李忠賢, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interface DipoleConcellation in SiO/High-k/SiO2/SiGate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K.Kita and A. Toriumi
- Organizer
  2012 Pacific Rim Meetingon Electrochemical and Solid-StateScience (PRiME 2012)
- Place of Presentation
  米国 Honolulu 市
- Year and Date
  2012-10-09
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] CoFeB薄膜の磁気異方性およびその電界制御性の酸化物による違い2012
- Author(s)
  古場治朗, 栗原隆帆, 宮川成人, 喜多浩之
- Organizer
  第73回秋季応用物理学会学術講演会
- Place of Presentation
  松山大学, 松山
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Challenges and Opportunities in Voltage Control of Magnetic Anisotropy of Ultrathin Ferromagnetic Metals for Future Spintronics2012
- Author(s)
  Koji Kita and D. C. Worledge
- Organizer
  International Conference on Emerging Advanced Nanomaterials (ICEAN2012)
- Place of Presentation
  ブリスベン, オーストラリア(招待講演)
- Year and Date
  2012-10-22
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Interface Dipole Cancellation in SiO2/High-k/SiO2/Si Gate Stacks2012
- Author(s)
  Shinji Hibino, Tomonori Nishimura, Kosuke Nagashio, Koji Kita and Akira Toriumi
- Organizer
  2012 Pacific Rim Meeting on Electrochemical and Solid-State Science
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Study on Interface Magnetic Anisotropy Deterioration Mechanisms in Ta/CoFeB/MgO stacks2012
- Author(s)
  Naruto Miyakawa, D. C. Worledge, and Koji Kita
- Organizer
  2012 Int. Conf. on Solid State Device and Physics
- Place of Presentation
  京都国際会館, 京都
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology2012
- Author(s)
  K.Kita, S.K.Wang, T.Tabata, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39)
- Place of Presentation
  La Fonda Hotel, Santa Fe (U.S.A.)(招待講演)
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology(invited)2012
- Author(s)
  K. Kita, S. K. Wang, T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  39th Conf. Physics and Chemistry of Surfaces and Interfaces,(PCSI-39)
- Place of Presentation
  Santa Fe, USA
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology2012
- Author(s)
  K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39)
- Place of Presentation
  米国SantaFe, NM(招待講演)
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Counter Dipole Layer Formation in SiO_2/High-k/SiO_2/Si Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  Silicon Nanoelectronics Workshop(2012)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2012-06-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「EC セル用 Ta薄膜へのプロトン導入法による導電性の変化」電気化学会2012
- Author(s)
  小橋啓史,喜多浩之
- Organizer
  第79回大会
- Place of Presentation
  浜松市
- Year and Date
  2012-03-31
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] ConductionBand-offset in GeO/Ge Stack Determinedby Internal PhotoemissionSpectroscopy2012
- Author(s)
  W. Zhang, T. Nishimura, K. Nagashio, K.Kita and A. Toriumi
- Organizer
  2012 Pacific Rim Meetingon Electrochemical and Solid-StateScience (PRiME 2012), (
- Place of Presentation
  米国 Honolulu 市
- Year and Date
  2012-10-09
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Study on DipoleLayer Formation between Two Oxides :Experimental Evidences and PossibleModels2011
- Author(s)
  K. Kita and A. Toriumi
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  米国 San Francisco 市
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Electric-field InducedChange of Magnetic Anisotropy inCoFeB/Oxide Stacks2011
- Author(s)
  K. Kita, D. W. Abraham, M. J. Gajek, andD. C. Worledge
- Organizer
  56th Conference onMagnetism and Magnetic Materials (MMM)(
- Place of Presentation
  米国 Scottsda
- Year and Date
  2011-11-02
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] CMOS ゲートスタック応用へ向けたGeO/Ge 界面反応の理解2011
- Author(s)
  喜多浩之,西村知紀,長汐晃輔,鳥海明
- Organizer
  第31回表面科学学術講演会
- Place of Presentation
  京都江戸川区
- Year and Date
  2011-12-17
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Thermodynamic Control of Interface Layer Formation in High-k Gate Stacs on 4H-SiC2011
- Author(s)
  S.Nakatsubo, T.Nishimura, K.Kita, K.Nagashio, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] lnterface Layer Scavenging and Defect Generation in LaLuO3/Ge MIS Gate Stack2011
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Demonstration of Very High-k HfO2(k～50)by Suppressing Martensitic Transformation in Thin Dielectric Films2011
- Author(s)
  Y.Nakajima, K.Kita, T, Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A.Toriumi, C.H.Lee, S.K.Wang, T.Tabata, M.Yoshida, D.D.Zhao, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  2011 IEEE International Electron Device Meeting (IEDM2011)
- Place of Presentation
  Hilton Washington Hotel, Washington DC (U.S.A.)(招待講演)
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Transformation Kinetics of HfO_2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2011 Symposia on VLSI Technology
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 Symposia on VLSI Ttechnology
- Place of Presentation
  Rihga Royal Hotel Kyoto, (Kyoto)
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, and K. Nagashio
- Organizer
  2011 IEEE International Electron Device Mtg.(IEDM2011)
- Place of Presentation
  Washington DC, USA
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] ElectricElectric-field Induced Change of Magnetic Anisotropy in CoFeB/Oxide Stacks2011
- Author(s)
  Koji Kita, D.W.Abraham, M.J.Gajek, D.C.Worledge
- Organizer
  56th Conference on Magnetism and Magnetic Materials (MMM)
- Place of Presentation
  米国Scottsdale, AZ
- Year and Date
  2011-11-02
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Opportunities for Phase-controlled Higher-k HfO22011
- Author(s)
  A.Toriumi, Y.Nakajima, K.Kita
- Organizer
  220th ECS Meeting
- Place of Presentation
  Westin Boston Waterfront, Boston (U.S.A.)(招待講演)
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 1.2 nm-EOT Al2O3 /Ge Gate Stack with GeO X-free Interface2011
- Author(s)
  T.Tabata, C.H.Lee, T.Nishimura, S.K.Wang, K.Kita, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Study on Dipole Layer Formation between Two Oxides : Experimental Evidences and Possible Models2011
- Author(s)
  K.Kita, A.Toriumi
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  米国San Francisco, CA(招待講演)
- Year and Date
  2011-04-27
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction2011
- Author(s)
  S.K.Wang, K.Kita, T, Nishimura, K.Nagashio, A, Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] CMOSゲートスタック応用へ向けたGeO_2/Ge界面反応の理解2011
- Author(s)
  喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第31回表面科学学術講演会
- Place of Presentation
  タワーホール船堀(東京都江戸川区)(招待講演)
- Year and Date
  2011-12-17
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Understanding of GeO2 Material Properties for Advanced Ge MIS Stacks2010
- Author(s)
  Koji Kita
- Organizer
  The 41th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  San Diego, USA 招待講演
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-13
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] XPSで決定するHigh-k絶縁膜価電子帯エネルギー準位の定量的再検討2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO_2/Ge界面反応の理解に基づくGeO_2膜物性の劣化現象の制御2010
- Author(s)
  喜多浩之, 王盛凱, 李忠賢, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  応用物理学会シリコンテクノロジー分科会/電気通信学会合同研究会「ゲート絶縁薄膜,容量膜,機能膜およびメモリ技術」
- Place of Presentation
  東京大学,目黒区
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Experimental Demonstration of Higher-k Phase Hf02 through Non-equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO2膜とGeO2/Ge界面の独立な制御-2010
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 高圧O2熱処理がGe/GeO2に及ぼす影響2010
- Author(s)
  吉田まほろ, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks2010
- Author(s)
  F.I.Alzakia, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 低圧酸素雰囲気下におけるGe表面の活性酸化2010
- Author(s)
  王盛凱, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K. Kita, L. Q. Zhu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  218th ECS Mtg.
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Resistiveswitching in NiO bilayer films withdifferent crystallinity layers2010
- Author(s)
  K. Kita, A. Eika, T. Nishimura, K.Nagashio, and A. Toriumi
- Organizer
  The217th Electrochemical Society Meeting
- Place of Presentation
  カナダ Vancouver
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] High-k材料固有のバンド端エネルギー準位のXPSによる定量的評価2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] UV分光エリプソメトリを用いた複素屈折率測定に基づくGe上GeO2薄膜の欠陥評価2010
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面から脱離するGeOのTDSによる解析2010
- Author(s)
  王盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 高圧O_2熱処理がGe/GeO_2に及ぼす影響2010
- Author(s)
  吉田まほろ, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Resistiveswitching in NiO bilayer films withdifferent crystallinity layers2010
- Author(s)
  K. Kita, A. Eika, T. Nishimura, K.Nagashio, and A. Toriumi
- Organizer
  International Symposium on TechnologyEvolution for Silicon Nano-Electronics(ISTESNE) (
- Place of Presentation
  東京工業大学,目黒区
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Formation of Dipole Layers at Oxide lnterfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, USA 招待講演
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Formation ofDipole Layers at Oxide lnterfaces inHigh-k Gate Stacks2010
- Author(s)
  K. Kita, L. Q. Zhu T. Nishimura, K.Nagashio, and A. Toriumi
- Organizer
  The 218thElectrochemical Society Meeting
- Place of Presentation
  米国 Las Vegas
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] 極薄TiO2膜の挿入による金属/n-Ge接合におけるオーミック接合の形成2010
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] X-ray Photoelectron Spectroscopy Study of dipole Effects at High-k/SiO2 Interface2010
- Author(s)
  L..Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy(TDS)Analysis2010
- Author(s)
  S.K.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面から脱離するGeOのTDSによる解析2010
- Author(s)
  王盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理ー」
- Place of Presentation
  三島市
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] X-ray Photoelectron Spectroscopy Study of Dipole Effects at High-k/SiO_2 Interface2010
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  三島市
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] GeO2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO2膜とGeO2/Ge界面の独立な制御-2010
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] UV分光エリプソメトリを用いた複素屈折率測定に基づくGe上GeO2薄膜の欠陥評価2010
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理ー」
- Place of Presentation
  三島市
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] GeO_2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO_2膜とGeO_2/Ge界面の独立な制御-2010
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] TO-and LO-mode analyses in asymmetric stretching vibrations in ultra thinthermally grown GeO2 on Ge substrate2010
- Author(s)
  M.Yoshida, T.Nishimura, C.H.Lee, K.Kita, K.Nagashio , A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「High-k/SiO2界面に形成されるダイポールの起源」(招待)2010
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  ゲートスタック研究-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-23
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interfacial dipoles at high-k/SiO2 interface observed by X-ray Photoelectron Spectroscopy2010
- Author(s)
  竺立強, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO_2MISスタックのフラットバンド電圧に対するGeO_2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Internal Photo Emission測定における絶縁膜電界の決定方法2010
- Author(s)
  鷹本靖欣, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Stability origin of metastable higher-k phase HfO2 at room temperature2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation2010
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, S.Wang, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2 MISスタックのフラットバンド電圧に対するGeO2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T. Tabata, C. H. Lee, K. Kita, and A. Toriumi
- Organizer
  218th ECS Mtg.
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-13
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k/SiO_2界面に形成されるダイポールの起源2010
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  三島市
- Year and Date
  2010-01-23
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] 高圧O2熱処理がGe/GeO2に及ぼす影響2010
- Author(s)
  吉田まほろ, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2 MISスタックのフラットバンド電圧に対するGeO2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] XPS による GeO2/Ge 界面の価電子帯バンドオフセットの決定2010
- Author(s)
  張文峰, 西村知紀, 長汐晃輔, 喜多浩之,鳥海明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(厚木)
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Resistive switching in NiO bilayer films with different crystallinity layers2010
- Author(s)
  K.Kita, A.Eika, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  The 217th The Electrochemical Society Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Ge/GeO2界面反応の理解に基づいたGeO2膜物性の制御とGe-MOSFETの性能向上2010
- Author(s)
  喜多浩之, 王盛凱, 李忠賢, 吉田まほろ, 西村知紀, 長汐晃浦, 鳥海明
- Organizer
  電気気学会電子デバイス研究会 EDD-10-037
- Place of Presentation
  東京
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Experimental Demonstration of Higher-k Phase HfO2 through non-equilibrium Thermal Treatment2010
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  217th ECS Mtg.
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Ge CMOSの可能性と課題」(招待)2010
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃浦
- Organizer
  2010春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Understanding of GeOMaterial Properties for Advanced Ge MISStacks2010
- Author(s)
  K. Kita
- Organizer
  The 41th IEEE SemiconductorInterface Specialists Conference(SISC)
- Place of Presentation
  米国 SanDiego
- Year and Date
  2010-12-08
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] Ge/GeO_2界面から脱離するGeOのTDSによる解析2010
- Author(s)
  王盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  三島市
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T.Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Resistive switching in NiO bilayer films with different crystallinity layers2010
- Author(s)
  K.Kita, A.Eika, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
- Place of Presentation
  東京工業大学,目黒区
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-22656142
[Presentation] GeO2 MISスタックのフラットバンド電圧に対するGeO_2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] Interfacial dipoles at high-k/SiO_2 interface observed by X-ray Photoelectron Spectroscopy2010
- Author(s)
  竺立強, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第57回応用物群関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] UV分光エリプソメトリを用いた複素屈折率測定に基づくGe上GeO_2薄膜の欠陥評価2010
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  三島市
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 低圧酸素雰囲気下におけるGe表面の活性酸化2010
- Author(s)
  王盛凱, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Properties of GeO_2 Films and Ge/GeO_2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco(USA)
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 高圧酸化によるGeO2膜中欠陥の抑制効果の分光エリプソメトリーによる観察2009
- Author(s)
  喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] X-ray Photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks2009
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO_2からのGeO脱離における活性化エネルギーのTDSによる評価2009
- Author(s)
  王盛凱, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 「Ge-CMOSをめざした固相界面場制御」(招待)2009
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃輔
- Organizer
  2009年秋季70回応用物理学会学術講演会シンポジウム『シリコンナノエレクトロニクスの新展開』
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 180 isotope tracing of GeO Desorption from GeO2/Ge Structure2009
- Author(s)
  S.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  MRS spring meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] GeO2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the Origin of Anomalous VTH Shift in high-k MOSFETs2009
- Author(s)
  A. Toriumi and K. Kita
- Organizer
  215th ECS Mtg.
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge高圧酸化におけるGeO脱離抑制に対する全圧と分圧の違い2009
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 高圧酸化によるGeO_2膜中欠陥の抑制効果の分光エリプソメトリーによる観察2009
- Author(s)
  喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  平成21年春季第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ge高圧酸化におけるGeO脱離抑制に対する全圧と分圧の違い2009
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のアニール後に観測されるサブギャップ抑制のための高圧酸素圧力の定量化2009
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO_2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Kinetic Study of GeO Desorption from Ge/GeO2 System2009
- Author(s)
  S.K. Wang, K. Kita, C.H. Lee, T. Tabata, K. Nagashio, T. Nishimura, A. Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlingnton
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO2 by Changing O2 Pressure in PDA Process2009
- Author(s)
  M.Yoshida, K.Kita, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2からのGeO脱離における活性化エネルギーのTDSによる評価2009
- Author(s)
  王盛凱, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Local GeO2 Doping at LaLuO3/Ge Interface for Direct High-k/Ge Gate Stacks2009
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Spectroscopic Ellipsometry Study on Defects Generation in GeO_2/Ge stacks2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Spectroscopic Ellipsometry Study on Defects Generation in GeO2/Ge stacks2009
- Author(s)
  K. Kita, M. Yoshida, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Kinetic Study of GeO Desorption from Ge/GeO2 system2009
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO_2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] "Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization"(invited)2009
- Author(s)
  K.Kita, C.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Study of La-doped GeO2 Films from Defect Annihilation Viewpoint2009
- Author(s)
  T.Tabata, K.Kita, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Opportunities and Challenges for Ge CMOS-Control of interfacing fields on Ge is a key-"(invited)2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  INFOS2009
- Place of Presentation
  Cambridge, UK
- Year and Date
  2009-06-29
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Kinetic Study of GeO Desorption from Ge/GeO_2 System2009
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlingnton(USA)
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation2009
- Author(s)
  C.H. Lee, T. Nishimura, T. Tabata, K. Nagashio, K. Kita, A. Toriumi
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] On the Origin of Anomalous VTH Shift in high-k MOSFETs2009
- Author(s)
  A. Toriumi, K. Kita
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge界面におけるショットキー障壁高さのGeO2導入効果-膜厚及び金属による違い-2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO2 by Changing O2 Pressure in PDA Process2009
- Author(s)
  M. Yoshida, K. Kita, K. Nagashio, T. Nishimura, A. Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlingnton
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ge/GeO_2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco(USA)
- Year and Date
  2009-05-27
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO_2 by Changing O_2 Pressure in PDA Process2009
- Author(s)
  吉田まほろ, 喜多浩之, 長汐晃輔, 西村知紀, 鳥海明
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlingnton(USA)
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ge/GeO2からのGeO脱離における活性化エネルギーのTDSによる評価2009
- Author(s)
  王盛凱, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] X-ray photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks2009
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] 金属/ゲルマニウム界面のフェルミレベルピンニングとその制御性2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  ゲート絶縁薄膜、容量膜、機能膜およびメモリ技術(応用物理学会、シリコンテクノロジー分科会)、第113研究集会「ゲートスタック研究の進展-Ge系材料を中心に」との合同開催
- Place of Presentation
  東京
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality2009
- Author(s)
  C.H.Lee, T.Nishimura, N.Saido, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のアニール後に観測されるサブギャップ抑制のための高圧酸素圧力の定量化2009
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation2009
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 18O isotope tracing of GeO Desorption from GeO2/Ge Structure2009
- Author(s)
  S.K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] XPS Analysis of High-k/SiO2/Si Stacks through Grounded Gate Metal-Estimation of Energy Levels of Electronic Structures of High-k Dielectric Films2009
- Author(s)
  Y.Chikata, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference (SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-05
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the Origin of Anomalous VTH Shift in high-k MOSFETs2009
- Author(s)
  鳥海明, 喜多浩之
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco(USA)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] Spectroscopic Ellipsometry Study on Defects Generation in GeO2/Ge stacks2009
- Author(s)
  K.Kita, M.Yoshida, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf.on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 高圧酸化によるGeO_2膜中欠陥の抑制効果の分光エリプソメトリーによる観察2009
- Author(s)
  喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  平成21年春季第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] GeO_2膜のアニール後に観測されるサブギャップ抑制のための高圧酸素圧力の定量化2009
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K.Kita, S.K.Wang, M.Yoshida, C.H.Lee, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Properties of GeO_2 Films and Ge/GeO_2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K.Kita, C.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco(USA)
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] "On the Origin of Anomalous VTH Shift in high-k MOSFETs"(invited)2009
- Author(s)
  A.Toriumi, K.Kita
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K. Kita, C. Lee, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  米国San Francisco市
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] GeO2/Ge界面からのGeO脱離の抑制によるGeO2/Ge界面特性の向上2008
- Author(s)
  喜多浩之, 鈴木翔, 能村英幸, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会第13回ゲートスタック研究会
- Place of Presentation
  三島市
- Year and Date
  2008-01-14
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Intrinsic Origin of Electric Dipoles Formed at High-k/SiO_2 Interface2008
- Author(s)
  K. Kita and A. Toriumi
- Organizer
  2010 IEEE International Electron Device Mtg.(IEDM)
- Place of Presentation
  San Diego, USA
- Year and Date
  2008-12-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO_2/Ge界面からのGeO脱離の抑制によるGeO_2/Ge界面特性の向上2008
- Author(s)
  喜多浩之, 鈴木翔, 能村英幸, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会第13回ゲートスタック研究会
- Place of Presentation
  三島市
- Year and Date
  2008-01-14
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Study of Kinetic Behaviors of GeO in GeO_2/Ge Stacks2008
- Author(s)
  K. Kita, C.H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science(PRIME)
- Place of Presentation
  米国Honolulu市(招待講演)
- Year and Date
  2008-10-15
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Study of Kinetic Behaviors of GeO in GeO_2/Ge Stacks2008
- Author(s)
  K. Kita, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRIME)
- Place of Presentation
  米国Honolulu市(招待講演)
- Year and Date
  2008-10-15
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] アモルファス希土類High-k膜LaLuO3の基本特性とGeMISへの適用2008
- Author(s)
  田畑俊行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 次世代High-k絶縁膜へ向けた三元系酸化物の材科設計(依頼)2008
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Study of Electron Mobility of Ge n-MOSFETs with High Pressure Oxidized GeO_22008
- Author(s)
  T. Nishimura, C.H. Lee, K. Kita, K. Nagashio, and A. Toriumi
- Organizer
  2008 International Workshop on Dielectric Thin Film for Future ULSI Devices(IWDTF2008)
- Place of Presentation
  東京
- Year and Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 熱処理によるGeO2膜の劣化過程の分光エリプソメトリーによる観察2008
- Author(s)
  喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Intrinsic Origin of Electric Dipoles Formed at Highk/SiO_2 Interface2008
- Author(s)
  K. Kita and A. Toriumi
- Organizer
  2008 IEEE International Electron Device Meeting (IEDM)
- Place of Presentation
  米国San Francisco市
- Year and Date
  2008-12-19
- Data Source
  KAKENHI-PROJECT-20035003
[Presentation] 金属/ゲルマニウム接合におけるフェルミレベルピンニングの起源と制御2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2/Ge界面からのGeO脱離の抑制によるGeO2/Ge界面特性の向上2008
- Author(s)
  喜多浩之, 鈴木翔, 能村英之, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2 and metal/Ge interfaces for metal source/drain Ge CMOS (Invited)2008
- Author(s)
  A. Toriumi, T. Nishimura, T. Takahashi, K. Kita
- Organizer
  2008 Materials Research Society Spring Metting
- Place of Presentation
  San Francisco
- Year and Date
  2008-03-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of interface properties high-k/Ge with GeO_2 interface layer (招待講演)2008
- Author(s)
  K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2008 International Conference on Solid State Device and Materials (SSDM)
- Place of Presentation
  つくば市
- Year and Date
  2008-09-24
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 微量SiO2添加に伴うHfO2の正方晶構造安定化の起源に関する考察2008
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 熱処理によるGeO_2膜の劣化過程の分光エリプソメトリーによる観察2008
- Author(s)
  喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  平成20年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Control of interface properties of high-k/Ge with GeO2 interface layer2008
- Author(s)
  K. Kita, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2008-09-24
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 次世代High-k絶縁膜へ向けた三元系酸化物の材料設計2008
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野市
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ge/絶縁膜およびGe/金属界面を制御したGe-MOSFET技術(依頼)2008
- Author(s)
  鳥海明, 喜多浩之, 西村知紀
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/極薄絶縁膜/Ge接合におけるショットキー障壁変調量の絶縁膜による違い2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/絶縁膜およびGe/金属界面を制御したGe-MOSFET技術2008
- Author(s)
  鳥海明, 喜多浩之
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Phase Controlled HfO_2 for Higher-k Dielectrics2008
- Author(s)
  A. Toriumi, K. Kita, S. Migita and Y. Watanabe
- Organizer
  Higher-k Workshop
- Place of Presentation
  Stanford Univ., USA
- Year and Date
  2008-08-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the Control of GeO2/Ge and Metal/Ge Interfaces for Metal Source/drain Ge CMOS2008
- Author(s)
  A. Toriumi, T. Nishimura, K. Kita, T. Takahashi
- Organizer
  2007 Materials Research Society Spring Meeting
- Place of Presentation
  米国San Francisco市
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks2008
- Author(s)
  K. Kita, C.H. Lee, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science
- Place of Presentation
  米国Honolulu市
- Year and Date
  2008-10-15
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 基板加熱スパッタリング法により成膜されたHfO2薄膜の誘電緩和とその起源(若手奨励賞のため招待)2008
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Study of Electron Mobility of Ge n-MOSFETs with High Pressure Oxidized GeO22008
- Author(s)
  T. Nishimura, C.H. Lee, K. Kita, K. Nagashio, A. Toriumi
- Organizer
  2008 International Workshop on Dielectric Thin Film for Future ULSI Devices
- Place of Presentation
  東京
- Year and Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] 金属/Ge接合界面への極薄GeOxの導入によるフェルミレベルピンニングの緩和2007
- Author(s)
  西村知紀, 喜多浩之, 鳥海明
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of High-k / Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilizaiton2007
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, A. Toriumi
- Organizer
  Fifth International Symposium on Control of Semiconductor Interface
- Place of Presentation
  八王子市
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Interfacing Control of Dielectric Films and Metals on Germanium for CMOS Application (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura, T. Takahashi
- Organizer
  The 34th International Symposium on Compound Semiconductors
- Place of Presentation
  京都
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermally Robust Germanium MIS Gate Stacks with LaYO3 Dielectrics Films2007
- Author(s)
  T. Takahashi, Y. Zhao, T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Organizer
  212th Meeting of The Electrochemical Society
- Place of Presentation
  米国
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota, M. Hirose
- Organizer
  2007 International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Fermi-Level Pinning at Metal/Germanium. Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics2007
- Author(s)
  S. Suzuki, K. Kita, H. Nomura, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 基板加熱スパッタによるHfO2膜の結晶化促進と著しい誘電分散の出現2007
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  応用物理学会秋季訓演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium2007
- Author(s)
  A. Toriumi, K. Kita and T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interface Properties of Ge with Dielectrics and Metals (Invited)2007
- Author(s)
  A. Toriumi, H. Nomura, S. Suzuki, T. Nishimura, K. Kita
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI)
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE): Interfacial Dipole and Band Diagram in Al/Hf(Si)O2/Si MOS Structure2007
- Author(s)
  J. Widiez, K. Kita, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSD)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of High-k / Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilizaiton (招待講演)2007
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, and A. Toriumi
- Organizer
  Fifth International Symposium on Control of Semiconductor Interface(ISCSI-V)
- Place of Presentation
  八王子市
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Control of High-k/Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization (Invited)2007
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  38th IEEE Semiconductor Interface Specialists Conference(SISC2007)
- Place of Presentation
  Arlington, USA
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2/Ge and metal/Ge interfaces (Invited)2007
- Author(s)
  A. Toriumi, T. Nishimura, K. Kita
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Effect of Ultra-thin Al2O3 Insertion on Fermi-level Pinning at Metal/Ge Interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as Highk Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Organizer
  211th Meeting of The Electrochemical Society (ECS)
- Place of Presentation
  Chicago, USA
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS-Ge-intimate Material Selection and Interface Conscious Process Flow2007
- Author(s)
  T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, A. Toriumi
- Organizer
  2007 International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS-Ge-intimate Material Selection and Interface Conscious Process Flow2007
- Author(s)
  T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita and A. Toriumi
- Organizer
  2007 International Electron Device Meeting
- Place of Presentation
  Washington, D.C.
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS2007
- Author(s)
  A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota and M. Hirose
- Organizer
  2007 International Electron Device Mtg.(IEDM)
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics2007
- Author(s)
  S. Suzuki, K. Kita, H. Nomura, T. Nishimura, and A. Toriumi
- Organizer
  2007 International Conference on Solid State Device and Materials (SSDM)
- Place of Presentation
  つくば市
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ternary High-k Dielectrics for Advanced CMOS2007
- Author(s)
  A. Toriumi and K. Kita
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/High-k絶縁膜の界面反応に着目した電気特性の制御2007
- Author(s)
  喜多浩之, 能村英幸, 鈴木翔, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会シリコンテクノロジー分科会第93回研究集会「ゲートスタック構造の新展開」
- Place of Presentation
  東広島市
- Year and Date
  2007-06-08
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ternary High-k Dielectrics for Advanced CMOS (Invited)2007
- Author(s)
  A. Toriumi, K. Kita
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Dramatic Improvement of GeO_2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura and A. Toriumi
- Organizer
  212th Meeting of The Electrochemical Society (ECS)
- Place of Presentation
  Washington, D.C.
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics2007
- Author(s)
  S. Suzuki, K. Kita, H. Nomura, T. Nishimura, A. Toriumi
- Organizer
  2007 International Conference on Solid State Device and Materials
- Place of Presentation
  つくば市
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19686037
[Presentation] Ge/High-k膜の界面反応に着目した電気特性の制御2007
- Author(s)
  喜多浩之, 能村英幸, 鈴本翔, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会・シリコンテクノロジー分科会第93回研究集会「ゲートスタツク構造の新展開」
- Place of Presentation
  東広島
- Year and Date
  2007-06-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Origin of Structural Phase Transformation of SiO2-doped HfO22007
- Author(s)
  K. Tomida, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. ishimura, K. Kita, A. Toriumi
- Organizer
  38th IEEE Semiconductor Interface Specialists Conference International (SISC2007)
- Place of Presentation
  Arlington, USA
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Organizer
  212th Electrochemical Society Meeting
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] CoFeB と遷移金属酸化物MOx の界面磁気異方性の電界応答性に遷移金属元素M の性質が与える影響
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Quantitative Characterization of Border Traps with Widely-Spread Time Constant in SiC MOS Capacitors by Transient Capacitance Measurements
- Author(s)
  Yuki Fujino, Richard Heihachiro Kikuchi, Hirohisa Hirai and Koji Kita
- Organizer
  2014 Int. Conf. on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  つくば国際会議場（つくば市）
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] CoFeB と遷移金属酸化物MOx の界面磁気異方性の電界応答性に遷移金属元素M の性質が与える影響
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] 種々の温度における容量の過渡応答(C-t特性)に基づくSiC MOS界面近傍の膜中トラップ密度の定量化
- Author(s)
  藤野雄貴，菊地リチャード平八郎，喜多浩之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] CoFeB/MOx界面磁気異方性とその電界応答性の変化に与える金属元素Mの選択の効果
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics
- Author(s)
  Koji Kita, Richard Heihachiro Kikuchi, and Hirohisa Hirai
- Organizer
  225th ECS Meeting
- Place of Presentation
  Orlando, USA
- Year and Date
  2014-05-11 – 2014-05-16
- Invited
- Data Source
  KAKENHI-PROJECT-24360287
[Presentation] Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density
- Author(s)
  Koji Kita, Richard Heihachiro Kikuchi, Hirohisa Hirai, and Yuki Fujino
- Organizer
  226th ECS Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-05 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] CoFeB/MOx界面磁気異方性とその電界応答性の変化に与える金属元素Mの選択の効果
- Author(s)
  大石竜輔，喜多浩之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26630291
[Presentation] SiC MOS界面近傍の膜中欠陥モデルを用いた容量の過渡応答による遅い準位の定量的解析手法の提案
- Author(s)
  藤野雄貴，菊地リチャード平八郎，平井悠久，喜多浩之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360287

1. TORIUMI Akira (50323530)

# of Collaborated Projects: 3 results

# of Collaborated Products: 196 results
2. NISHIMURA Tomonori (10396781)

# of Collaborated Projects: 2 results

# of Collaborated Products: 105 results
3. KYUNO Kentaro (40251467)

# of Collaborated Projects: 1 results

# of Collaborated Products: 41 results
4. Watanabe Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
5. FEI Jiayang

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
6. HASHIMOTO Shuichiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TOMITA Motohiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. SHIMURA Kosuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. KUNUGI Ryota

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
10. NAKANE Koki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. NAKAGAWA Nobuhiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. TAKAHASHI Okuto

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. PEREA CAUSIN Marc

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. ZHANG Wenfeng

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Kita Kouji 喜多 浩之

KITA Koji 喜多 浩之

KITA Kita 喜多 浩之

Research Projects

Research Products

Co-Researchers

Understanding of unique phenomena at SiC surface and interface for controlling its MOS interface characteristicsPrincipal Investigator

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Lowering the thinning limit of ferroelectric Hf-based oxide nanometer film by applying tensile strain and suppressing interface reactionsPrincipal Investigator

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Interface charge engineering for manipulation of band alignment at dielectric interfaces and demonstration of its impact on device characteristicsPrincipal Investigator

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Clarification of the guideline to improve SiC MOSFET performance based on the structural deformation analysis near the thermally-oxidized interfacePrincipal Investigator

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Quasi-quantitative characterization of defect density in SiC substrate after thermal oxidation by photo-assited capacitance measurementPrincipal Investigator

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Study on Limiting Factors of Electron Mobility in SiC MOS Inversion Channel with Improved Quality InterfacePrincipal Investigator

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Development of Materials Informatics to Predict Polarization at Oxide Hetero-Interfaces

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Study on voltage-induced change of interface magnetic anisotropy at ferromagnetic-oxide interface toward ultralow power consuming non-volatile memoriesPrincipal Investigator

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Study on voltage control of interface anisotropy energy at ferromagnetic - oxide interfacesPrincipal Investigator

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Application of proton conduction of nickel oxide nanostructures to electrochromic devicesPrincipal Investigator

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抵抗変化メモリーにおける酸化物/電極界面の電気特性と酸化物内結果準位の相関の解明Principal Investigator

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Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films

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Study on Ge surface oxidation processes based on in-situ analysisPrincipal Investigator

Principal Investigator

Kita Kouji 喜多浩之

KITA Koji 喜多浩之

KITA Kita 喜多浩之