OGURA ATSUSHI 小椋厚志

… Alternative Names

小椋厚志オグラアツシ

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Researcher Number	00386418
Other IDs
Affiliation (Current)	2025: 明治大学, 理工学部, 専任教授
Affiliation (based on the past Project Information) *help	2016: 明治大学, 公私立大学の部局等, 教授 2012 – 2016: 明治大学, 理工学部, 教授 2009: Meiji University, 理工学部, 教授 2007 – 2008: Meiji University, 理工学部, 准教授
Review Section/Research Field	Principal Investigator Science and Engineering / Electronic materials/Electric materials Except Principal Investigator Power engineering/Power conversion/Electric machinery
Keywords	Principal Investigator 物性実験 / マイコロナノデバイス / 半導体物性 / フォノン変形ポテンシャル / 異方性歪 / 有限要素法 / 歪 / 応力 / 電気・電子材料 / 国際情報交換 … More / 有限差分時間領域法（FDTD） / 有限要素法（FEM / 表面増強ラマン分光法 / 電子・電気材料 / 第一原理計算（ab initio） / 有限要素法（FEM） / フォノン変形ポテンシャル（PDPs） / 液浸ラマン分光法 / 応力・歪 / SiGe … More Except Principal Investigator 分子 / 水素貯蔵 / 貯蔵 / 変換 / 発生 / 電気エネルギー / 太陽光発電 / 自然エネルギー / 燃料電池 / 天然由来分子 / エネルギー貯蔵 / 再生可能エネルギー / 太陽電池 Less

Energy strage system with recycled hydrogen carriers
- Principal Investigator
  
  Ohshita Yoshio
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  Toyota Technological Institute
Multi-axial analysis of strain states introduced in nano area on Ge and SiGe super-thin films by Raman spectroscopyPrincipal Investigator
- Principal Investigator
  
  OGURA ATSUSHI
- Project Period (FY)
  2012 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meiji University
LSIプロセスによりシリコン結晶に導入された結晶歪の精密分布測定に関する研究Principal Investigator
- Principal Investigator
  
  小椋厚志
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Meiji University
シリコン最表面の微小領域に導入された結晶歪の精密分布測定に関する研究Principal Investigator
- Principal Investigator
  
  小椋厚志
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Meiji University

All 2017 2016 2015 2014 2013 2012 2010 2009 2008 2007 Other

All Journal Article Presentation Book Patent

[Book] Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectrosopy2012
- Author(s)
  D. Kosemura, M. Tomita, K. Usuda, and A. Ogura
- Publisher
  InTech, Croatia
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] In-Plane Biaxial Strain Evaluation Induced in Ge1-XSnx Films Using Oil-Immersion Raman Spectroscopy2016
- Author(s)
  K. Takeuchi, K. Suda, R. Suzuki, R. Yokogawa, N. Sawamoto, K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 8 Pages: 589-597
- DOI
  10.1149/07508.0589ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Examination of phonon deformation potentials for accurate strain measurements in silicon-germanium alloys with the whole composition range by Raman spectroscopy2016
- Author(s)
  D. Kosemura, S. Yamamoto, K. Takeuchi, K. Usuda, and A. Ogura
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 2 Pages: 026602-026602
- DOI
  10.7567/jjap.55.026602
- NAID
  210000146043
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Origin of additional broad peaks in Raman spectra　from thin germanium-rich silicon-germanium films2016
- Author(s)
  Kazuma Takeuchi、Daisuke Kosemura, Ryo Yokogawa, Koji Usuda, and Atsushi Ogura
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 7 Pages: 071301-071301
- DOI
  10.7567/apex.9.071301
- NAID
  210000137963
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy2016
- Author(s)
  Kazuma Takeuchi, Kohei Suda, Ryo Yokogawa, Koji Usuda, Naomi Sawamoto and Atsushi Ogura
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 55 Issue: 9 Pages: 095502-095502
- DOI
  10.7567/jjap.55.095502
- NAID
  210000147055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transaction
  
  Volume: 66 Issue: 4 Pages: 39-45
- DOI
  10.1149/06604.0039ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015
- Author(s)
  K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, and A. Ogura
- Journal Title
  
  ECS Transaction
  
  Volume: 69 Issue: 10 Pages: 81-87
- DOI
  10.1149/06910.0081ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy2014
- Author(s)
  A. Ogura and D. Kosemura
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 67-77
- DOI
  10.1149/06406.0067ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] Electrical field analysis of　metal-surface plasmon resonance using a biaxially strained Si substrate2014
- Author(s)
  Daisuke Kosemura,Siti Norhidayah binti CheMohd Yusoff and Atsushi Ogura
- Journal Title
  
  J. Raman Spectrosc.
  
  Volume: 45 Issue: 6 Pages: 414-417
- DOI
  10.1002/jrs.4478
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014
- Author(s)
  S. Yamamoto, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 841-847
- DOI
  10.1149/06406.0841ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] 高分解能ラマン分光測定による最先端LSIのひずみ評価2013
- Author(s)
  小椋厚志、小瀬村大亮
- Journal Title
  
  応用物理
  
  Volume: 82 Pages: 317-321
- NAID
  10031159922
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Measurement of Anisotropic Biaxial Stresses in Sil-xGex /Si Mesa Structures bu Oil-Immersion Raman Spectroscopy2013
- Author(s)
  D. Kosenura, M. Tonita. K. Usuda, T. Tezuka, and A. Ogura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CA05-04CA05
- DOI
  10.7567/jjap.52.04ca05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance2012
- Author(s)
  Hiroki Hashiguchi, Munehisa Takei
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 17
- DOI
  10.1063/1.4761959
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09826, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Investigation of Phonon DeformationPotentials in Si_<1_x>Ge_x by Oil-ImmersionRaman Spectroscopy2012
- Author(s)
  D. Kosemura, K. Usuda, and A. Ogura
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111301-111301
- DOI
  10.1143/apex.5.111301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Evaluation of Anisotropic StrainRelaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura, M. Tomita, K. Usuda, and A.Ogura
- Journal Title
  
  Japanese Journal of AppliedPhysics
  
  Volume: 51 Issue: 2S Pages: 02BA03-02BA03
- DOI
  10.1143/jjap.51.02ba03
- NAID
  210000140194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Channel Strain Measurement in 32-nm-Node Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Raman Spectroscopy2012
- Author(s)
  Munehisa Takei
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 4S Pages: 04DA04-04DA04
- DOI
  10.1143/jjap.51.04da04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09826, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal-Oxide-Semiconductor Field-Effect Transistors and Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors2009
- Author(s)
  Tetsuro Hayashida, Atsushi Ogura, 他
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  210000066790
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Study on the Degradation of p-n Diode Characteristics Caused by Small Angle Grain Boundary in Multi-Crystalline Silicon Substrate for Solar Cells2009
- Author(s)
  Tomihisa Tabana, Atsushi Ogura, 他
- Journal Title
  
  Jpn.J.Appl.Phys 48
- NAID
  210000067693
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Improvement of CVD SiO2 by Post Deposition Microwave Plasma Treatment2009
- Author(s)
  Kohki Nagata, A.Ogura, 他
- Journal Title
  
  ECS Transactions 19
  
  Pages: 55-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate2009
- Author(s)
  Daisuke Kosemura, Atsushi Ogura, 他
- Journal Title
  
  Study of Strain Induction for Metal-Oxide-Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] UV-Raman Spectroscopy Study on SiO2/Si Interface2009
- Author(s)
  Maki Hattori, Atsushi Ogura, 他
- Journal Title
  
  ECS Transactions 1
  
  Pages: 45-51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation of local strain in Si using UV-Raman spectroscopy2009
- Author(s)
  Atsushi Ogura, 他
- Journal Title
  
  Materials Science and Engineering B 159-160
  
  Pages: 206-211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Channel-Stress Enhancement for Scaled pMOSFETs by using Damascene Gate with Top-Cut Compressive Stress Liner and eSiGe2009
- Author(s)
  Satoru Mayuzumi, Atsushi Ogura, 他
- Journal Title
  
  IEEE Trans. Electron Devices 56
  
  Pages: 620-626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Tempera ture Dependences of Sputtered Titanium Nitride Gate Work Func tion and Their Effect on Device Characteristics2008
- Author(s)
  Yongxun Liu, Atsushi Ogura, 他
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2433-2437
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] UV-ラマン分光法によるSiの高空間分解能ひずみ評価2008
- Author(s)
  小椋厚志
- Journal Title
  
  応用物理 77(校正中)
- NAID
  10024191821
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026013
[Journal Article] W-CVD using(i-C3H7C5H4)2WH22008
- Author(s)
  A. Ogura, 他
- Journal Title
  
  J. Vacume Science & Tech. 26
  
  Pages: 561-564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation of Si_3N_4/Si interface by UV Raman spectroscopy2008
- Author(s)
  Atsushi Ogura, 他
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6229-6231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Characterization of Strain for High Performance Metal-Oxide-Semiconductor Field-Effect-Transistor2008
- Author(s)
  Disuke Kosemura, Atsushi Ogurat
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2538-2543
- NAID
  210000064529
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate2008
- Author(s)
  Atsushi Ogura, 他
- Journal Title
  
  Solid State Electronics. 52
  
  Pages: 1845-1848
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation and Control of Strain in Si Induced by Patterned Si N Stressor2008
- Author(s)
  Atsushi Ogura, 他
- Journal Title
  
  Electrochemical and Solid-State Letters 12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035012
[Journal Article] Evaluation of Si_3N_4/Si interface by UV Raman spectroscopy2008
- Author(s)
  A. Ogura, T. Yoshida, 他
- Journal Title
  
  Applied Surface Science (校正中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026013
[Patent] アニール装置及びこれを用いたアニール方法2009
- Inventor(s)
  小椋厚志
- Industrial Property Rights Holder
  明治大学
- Acquisition Date
  2009-04-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] X線回折によるGe1-xSnx薄膜の組成深さ分布非破壊測定2017
- Author(s)
  廣沢一郎、須田耕平, 澤本直美, 町田英明, 石川真人, 須藤弘, 大下祥雄, 小椋厚志
- Organizer
  第30回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  柏
- Year and Date
  2017-01-08
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 選択的イオン注入法で作製した一軸性歪Geの異方性応力評価2016
- Author(s)
  山本章太郎、武内一真、小瀬村大亮、此島詩織、澤野憲太郎、小椋厚志
- Organizer
  第63回応用物理学会春季学術講演
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] In-Plane Biaxial Strain Evaluation Induced in Ge1-XSnx Films Using Oil-Immersion Raman Spectroscopy2016
- Author(s)
  K. Takeuchi, K. Suda, R. Suzuki, R. Yokogawa, N. Sawamoto, K. Usuda, and A. Ogura
- Organizer
  230th ECS Meeting/Passific Rim Meeting 2016
- Place of Presentation
  Honolulu, HI
- Year and Date
  2016-10-06
- Invited
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropic Strain Evaluation Induced in Group IV Materials using Liquid-Immersion Raman Spectroscopy2016
- Author(s)
  A. Ogura, and D. Kosemura
- Organizer
  16th International Workshop on Junction Technology
- Place of Presentation
  Shanghai, China
- Year and Date
  2016-05-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] SiGe薄膜のラマンスペクトルに見られるブロードピークの起源の検討2016
- Author(s)
  武内一真、小瀬村大亮、横川凌、澤本直美、臼田宏治、小椋厚志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 分子動力学法および分子軌道法を用いたSiGe混晶内のフォノン再現に関する考察2016
- Author(s)
  富田基裕、小椋厚志、渡邉孝信
- Organizer
  第63回応用物理学会春季学術講演
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法による歪Ge1-xSnxのフォノン変形ポテンシャル導出2016
- Author(s)
  武内一真、須田耕平、山本章太郎、横川凌、小椋厚志
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法によるSi基板上歪Si:C薄膜に印加された応力評価2016
- Author(s)
  山本章太郎、武内一真、石原聖也、小椋厚志
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 用いたGe1-xSnxメサ構造における異方性2軸応力評価2016
- Author(s)
  村上達海、武内一真、横川凌、須田耕平、石原聖也、小椋厚志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015
- Author(s)
  K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, and A. Ogura
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona
- Year and Date
  2015-10-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法によるGe基板上Ge1-xSnx薄膜の応力評価2015
- Author(s)
  武内一真、山本章太郎、横川凌、澤本直美、須田耕平、石原聖也、小椋厚志
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、愛知
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度SiGeにおけるフォノン変形ポテンシャルの導出2015
- Author(s)
  武内一真、小瀬村大亮, 山本章太郎, 富田基裕, 臼田宏治, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura
- Organizer
  227th ECS Meeting
- Place of Presentation
  Chicago, Illinois
- Year and Date
  2015-05-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] EBSP法を用いた微細な全Ge濃度域における歪SiGeメサ構造に生じる応力緩和分布の評価2015
- Author(s)
  富田基裕、小瀬村大亮, 臼田宏治, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] EBSP法を用いたSiGe/Geナノワイヤー構造に生じる応力緩和分布の高空間分解能測定2015
- Author(s)
  富田基裕、武内一真、山本章太郎、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、愛知
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 分子動力学法および分子軌道法を用いたSiGe混晶内の原子間ポテンシャルに関する考察2015
- Author(s)
  富田基裕、小椋厚志、渡邉孝信
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、愛知
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度歪SiGeメサ構造に印加された異方性2軸応力評価2015
- Author(s)
  山本章太郎、武内一真, 富田基裕, 小瀬村大亮, 臼田宏冶, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014
- Author(s)
  S. Yamamoto, D. Kosemura, S. N. C.M.Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-09
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Stress Relaxation in Strained SiGe Wire by Two-dimensional Super-resolution Raman S2014
- Author(s)
  Motohiro Tomita, Daisuke Kosemura, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura
- Organizer
  24nd International Conference on Raman Spectroscopy (23rd ICORS)
- Place of Presentation
  Yena, Germany
- Year and Date
  2014-08-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法を用いた TO/LOフォノンスペクトル励起による高 Ge濃度歪 SiGe メサ構造の異方性 2 軸応力緩和の観測2014
- Author(s)
  山本章太郎、小瀬村大亮，富田基裕，武内一真，横川　凌，臼田宏冶，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropoic Strain Evaluation in the Finite Si Area by Surface Plasmon Enhanced Raman Spectroscopy2014
- Author(s)
  A. Ogura and D. Kosemura
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06
- Invited
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] EBSP 法を用いた微細な歪 SiGe メサ構造に生じる応力緩和分布の Ge 濃度依存性評価2014
- Author(s)
  富田基裕、小瀬村大亮，臼田宏治，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法による選択的イオン注入により作製された一軸歪 SiGe/Siの異方性 2軸応力評価2014
- Author(s)
  山本章太郎、小瀬村大亮，富田基裕，武内一真，横川　凌，米倉瑛介，澤野憲太郎，野平博司，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] プラズマ励起ALD SiN 膜構造における応力評価2013
- Author(s)
  長坂将也、永田晃基、山口拓也、小椋厚志、陰地宏、孫珍永、広沢一郎、渡部佳優、廣田良浩
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  神奈川県
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 舳構造歪SiGe層に生じる応力緩和分布のテンソル評価2013
- Author(s)
  富田基裕、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  舳構造歪SiGe層に生じる応力緩和分布のテンソル評価
- Place of Presentation
  神奈川県
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy2012
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  nternational Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore, India
- Year and Date
  2012-08-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 有限要素法による微細構造歪SSOI層の応力緩和に対する膜厚依存性の評価2012
- Author(s)
  富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropic Biaxial Stress Evaluation in SiGe/Si Mesa Structures by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura, MダTomita, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion hman method2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, A. Ogura, and T. Tezuka
- Organizer
  International SiGe Technology and Deice Meeting
- Place of Presentation
  Berkeley, CA
- Year and Date
  2012-06-04
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] ラマン分光法による超薄膜SOIフォノン閉じ込めの評価2012
- Author(s)
  武井宗久,橋口裕樹,小瀬村大亮,内藤大明。黒澤裕也,内田健,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy and FEM Simulation2012
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Strain relaxation at mesa edge of strained SiGe layer on Si by oil-immersion Raman spectroscopy, NBD, and FEM simulation2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, A. Ogura, and T. Tezuka
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 局所表面プラズモン共鳴を用いたラマン分光法による歪Si基板の応力評価2012
- Author(s)
  橋口裕樹,武井宗久,小瀬村大亮,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] EBSP法を用いたSiGe/Siメサ構造における異方性応力緩和評価2012
- Author(s)
  長坂将也,富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] TO phonon Excitation using Surface Enhanced Raman Scattering for Stress Evaluation2012
- Author(s)
  H. Hashiguchi, M. Takei, D. Kosemura, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] High-mobility and Low-parasitic Resistance Characteristics in Strained Ge Nanowire pMOSFETs with Metal Source/Drain Structure Formed by Doping-free Processes2012
- Author(s)
  K. Ikeda, M. Ono, D. Kosemura, K. Usuda, M. Oda, Y. Kamimuta, T. Irisawa, Y. Moriyama, A. Ogura, and T. Teuka
- Organizer
  Symposium on VLSI Technology and Circuit
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2012-06-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Strain Evaluation in the State-of-・the-art CMOS Devices2012
- Author(s)
  A. Ogura
- Organizer
  Annual World Congress ofNano-S&T 2012
- Place of Presentation
  Qingdao, China(招待講演)
- Year and Date
  2012-10-27
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 微細構造Sil-xGexに印加された異方性応力の加工形状およびGe濃度依存性2012
- Author(s)
  小瀬村大亮,富田基裕,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSP2012
- Author(s)
  M. Tomita, M. Nagasaka, D. Kosemura, K. Usuda, T. Tezuka。and A. Ogura
- Organizer
  International conference on Solid State Devices and Material
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] SSOI微細構造における異方性応力緩和の膜羣依存性評価2012
- Author(s)
  シテイノルヒダヤーチェモハマドユソフ,富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Raman Spectroscopy for strain measurement in state-of-the-art LSI2012
- Author(s)
  A. Ogura
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto, Japan(招待講演)
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高NA、油浸ラマン分光によるメサ分離ひずみSGOI層の異方性ひずみ評価2012
- Author(s)
  臼田宏治,小瀬村大亮,富田基裕,小椋厚志,手塚勉
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Polarization Dependence of Intensity from Strained Si on Insulator in Tip-Enhanced Raman Spectroscopy2012
- Author(s)
  D, Kosemura, J. M. Atkin, S. Berweger, R. L. Olmon, M. B. Raschke, and A. Ogura
- Organizer
  International Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore, India
- Year and Date
  2012-08-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Material Exploration of ZrO2-Based Dielectric Thin Films for DRAM Capacitors by Composition-Spread Film Method2010
- Author(s)
  Yuji Kiyota, Atsushi Ogura, 他
- Organizer
  The 4th Global COE International Symposium on "Practical Chemical Wisdom"～ Joint Symposium with MANA, NIMS ～Advanced Materials Design at Nano-and Mesoscales toward Practical Chemical Wisdom
- Place of Presentation
  Tokyo
- Year and Date
  2010-01-14
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] UV-Raman spectroscopy study on SiO2/Si interface2009
- Author(s)
  Maki Hattori, Atsushi Ogura, 他
- Organizer
  215th Electrochemical Society Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Improvement of CVD SiO2 by post deposition microwave plasma treatment2009
- Author(s)
  Kouki Nagata, Atsushi Ogura, 他
- Organizer
  215th Electrochemical Society Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2009-05-28
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography2009
- Author(s)
  Takayoshi Shimura, Atsushi Ogura, 他
- Organizer
  13th International Conference on Defects -Recognition, Imaging and Physics in Semiconductors (DRIPXIII)
- Place of Presentation
  Wheering, West Virginia
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] GeSbTe-thin film formation by CVD for next generation memory(PCRAM : Phase Change RAM) materials2009
- Author(s)
  Hideaki Machida, Atsushi Ogura, 他
- Organizer
  Advanced Metallization Conference 19th Asian Session
- Place of Presentation
  Tokyo
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy2009
- Author(s)
  Munehisa Takei, Atsushi Ogura, 他
- Organizer
  2009 Materials Research Society Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Impact of adequate selection of channel direction on(001) and (110) waferorientation for strained nanowire transistors2009
- Author(s)
  A.Seike, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Electron-phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature2009
- Author(s)
  I.Tsuchida, Atsushi Ogura, 他
- Organizer
  216th Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of Multi-crystalline Silicon Substrates for Solar Cells by Raman Spectroscopy2009
- Author(s)
  Tomihisa Tachibana, Atsushi Ogura, 他
- Organizer
  216th Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Demonstration of Transconductance Enhancement on (110) and (100) Strained-nanowire FETs2009
- Author(s)
  A.Seike, Atsushi Ogura, 他
- Organizer
  216th Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Photoluminescence analysis of impurity precipitation on small angle grain boundaries in multi-crystalline Silicon2009
- Author(s)
  Michio Tajima, Atsushi Ogura, 他
- Organizer
  20th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
- Place of Presentation
  Vail, Co
- Year and Date
  2009-08-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Experimental investigation of electron-phonon scattering effect2009
- Author(s)
  I.Tsuchida, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Recombination velocities at grain boundaries in polycrystalline silicon2009
- Author(s)
  Yoshio Ohshita, Atsushi Ogura, 他
- Organizer
  19th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
- Place of Presentation
  Vail, Co
- Year and Date
  2009-08-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET2009
- Author(s)
  Tetsurou Hayashida, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of Strain and Crystal Quality in Si during Shallow Trench Isolation Process Using UV-Raman Spectroscopy2009
- Author(s)
  Daisuke Kosemura, Atsushi Ogura, 他
- Organizer
  13th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- Place of Presentation
  Wheering, West Virginia
- Year and Date
  2009-09-14
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell2009
- Author(s)
  Daisuke Kosemura, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of interfacial Layer for Restraint of Fermi Level Pinning2009
- Author(s)
  Yuta Iwashita, Atsushi Ogura, 他
- Organizer
  22nd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Sapporo
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy2009
- Author(s)
  Munehisa Takei, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Detail analysis of Σ9 grain boundaries in multi-crystalline silicon substrates for solar cell2009
- Author(s)
  Junichi Masuda, Atsushi Ogura, 他
- Organizer
  19th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
- Place of Presentation
  Vail, Co
- Year and Date
  2009-08-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of anisotropic biaxial stress using an immersion Evaluation of anisotropic biaxial stress using an immersion lens by Raman analysis based on the polarization rules2009
- Author(s)
  Daisuke Kosemura, Atsushi Ogura, 他
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of multi-crystalline silicon substrates for solar cells by Raman spectroscopy2009
- Author(s)
  Michio Tajima, Atsushi Ogura, 他
- Organizer
  13th Intemational Conference on Defects -Recognition, Imaging and Physics in Semiconductors (DRIPXIII)
- Place of Presentation
  Wheering, West Virginia
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Investigation of Structural Defects in Strained Si Wafers by Syn chrotron X-rav Tonoeranhv2008
- Author(s)
  Takayoshi Shimura, Atsushi Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of multi-crystalline silicon substrates with p-n diode array2008
- Author(s)
  T. Tachibana, A. Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Denver, USA
- Year and Date
  2008-08-05
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Micro-Raman study of channel strain in high performance pFE Ts with compressive stress liner and eSiGe using damascene gate technolog2008
- Author(s)
  M. Takei, A. Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-13
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Study of Stress Effect on Replacement Gate Technology with C ompressive Stress Liner and eSiGe for pFETs2008
- Author(s)
  S. Yamakawa, A. Ogura, 他
- Organizer
  2008 International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  Hakone, Japan
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] S Evaluation and control of strain in Si induced by patterned Si N stressor2008
- Author(s)
  H. Saito, A. Ogura, 他
- Organizer
  213th Electrochemical Society Meeting I
- Place of Presentation
  Phonix, USA
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Behaviors of ultra thin SiGe layer by annealing2008
- Author(s)
  Yu Yamamoto, Atsushi Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-13
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy2008
- Author(s)
  D. Kosemura, A. Ogura, 他
- Organizer
  21th International Conference on Raman Spe ctroscopy
- Place of Presentation
  Uxbridge, Great Britein
- Year and Date
  2008-08-20
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of local strain in Si using UV-Raman spectro scopy2008
- Author(s)
  Atsushi Ogura
- Organizer
  Euro-MRS 2008, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications,
- Place of Presentation
  Strasbourg, France
- Year and Date
  2008-05-27
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] SiN膜により導入された歪の熱処理特性の評価2008
- Author(s)
  斉藤博之、小椋厚志, 他
- Organizer
  春季応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋校
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19026013
[Presentation] The in-situ measurement of thermal expansion coefficient of thin SiGe layer on Si (001) by XRD2008
- Author(s)
  Hirotaka Kurozaki, Atsushi Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-11
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Suppression of SiC Surface Roughening during High Temperatur e Annealing by Atmospheric Control2008
- Author(s)
  S. Kinoshita, A. Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-13
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Channel-Stress Study on Gate-Size Effects for Damascene-Gate p MOSFETs with Top-Cut Compressive Stress Liner and eSiGe2008
- Author(s)
  S. Mayuzumi, A. Ogura, 他
- Organizer
  2008 Symposium on VLSI Technology and c ircuit.
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-06-18
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Study on Stress Memorization by Argon Implantation and Annea ling2008
- Author(s)
  M. Hino, A. Ogura, 他
- Organizer
  214th Electrochemical Society Meeting
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-10-13
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Application of Synchrotron X-ray Diffraction2008
- Author(s)
  T. Shimura, A. Ogura, 他
- Organizer
  213th Electrochemical Society Meeting
- Place of Presentation
  Phonix, USA
- Year and Date
  2008-05-19
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-ray Photoelectron Spectroscopy2008
- Author(s)
  K. Tsutsui, A. Ogura, 他
- Organizer
  ESSDERC2008
- Place of Presentation
  Edinburgh, Great Britein
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] A Comparative Study of the Electrical Characteristics of Sputter ed TiN. Gate Planar MOSFETs and FinFETs2008
- Author(s)
  T. Hayashida, A. Ogura, 他
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices : Scieince and Technology
- Place of Presentation
  Tokyo
- Year and Date
  2008-11-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Chemical Vapor deposition using Pt (PF3) 4 and Ni (PF3) 42008
- Author(s)
  M. Ishikawa, A. Ogura, 他
- Organizer
  213th Electrochemical Society Meeting
- Place of Presentation
  Phonix, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] 透明ダミーゲートを有したMOSFETチャネル領域に導入された歪のUVラマン解析2008
- Author(s)
  小瀬村大亮、小椋厚志, 他
- Organizer
  春季応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋校
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19026013
[Presentation] Application of Synchrotron X-ray Diffraction Methods to Gate S tacks of Advanced MOS devices2008
- Author(s)
  T. Shimura, Atsushi Ogura, 他
- Organizer
  213th Electrochemical Society Meeting
- Place of Presentation
  Arizona, USA
- Year and Date
  2008-05-19
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Ion Beam Irradiation to Type IV Collagen for Biologic Reactivity2008
- Author(s)
  Yuichiro Shiga, Atsushi Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Study of Strain Introduction in the Channel of MOSFET with T ransparent Dummy Gate and Si_3N_4 Stressor2008
- Author(s)
  Daisuke Kosemura, Atsushi Ogura, 他
- Organizer
  5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-13
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Transconductance Enhancement by Utilizing Pattern Depe ndent Oxidation in Silicon Nanowire Field-Effect Transis tors.2008
- Author(s)
  A. Seike, A. Ogura, 他
- Organizer
  213th Electrochemical Society Meeting
- Place of Presentation
  Phonix, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Transconductance Enhancement of Strained <110> and <100> S Nanowire Channel Field-Effect Transistors2008
- Author(s)
  I. Tsuchida, A. Ogura, 他
- Organizer
  214th Electrochemical Society Meeting
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors2008
- Author(s)
  A. Seike, A. Ogura, 他
- Organizer
  2008 International Workshop on Dielectric T hin Films for Future ULSI Devices : Scieince and Technology
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-11-10
- Data Source
  KAKENHI-PROJECT-20035012
[Presentation] 高移動度LSIに用いられるSiN歪印加膜の密度評価2007
- Author(s)
  斉藤博之、小椋厚志, 他
- Organizer
  秋季応用物理学関係連合講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19026013
[Presentation] SiNパターン膜により導入されたSOI表面の歪分布評価2007
- Author(s)
  小瀬村大亮、小椋厚志, 他
- Organizer
  秋季応用物理学関係連合講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19026013
[Presentation] 液浸ラマン分光法による高Ge濃度圧縮歪SiGeメサ構造/Ge基板からのLO, TOフォノンスペクトルの観測
- Author(s)
  小瀬村大亮、富田基裕、臼田宏治、手塚勉、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Analysis of Electrical Field in Surface Enhanced Raman Spectroscopy Using Strained-Si Substrate
- Author(s)
  シティノルヒダヤーチェモハマドユソフ、小瀬村大亮、木嶋隆浩、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, A. Ogura
- Organizer
  223rd ECS Meeting
- Place of Presentation
  Tront, Canada
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Characterization of Anisotropic Strain Relaxation of Ge-Rich SGOI Nanowire Formed by the Two-Step Ge-Condensation Technique with High-NA and Oil-Immersion Raman Spectroscopy
- Author(s)
  K. Usuda, D. Kosemura, K. Ikeda, H. Hashiguti, M. Tomita, A. Ogura, T. Tezuka
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka、Japan
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度SGOIワイヤーの異方性ひずみ評価
- Author(s)
  臼田宏治、池田圭司、小瀬村大亮、富田基裕、小椋厚志、手塚勉
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 表面増強ラマン分光法による歪SiGe薄膜のLO/TOフォノン励起
- Author(s)
  山本章太郎、小瀬村大亮、シティノルヒダヤーモハマドユソフ、木嶋隆浩、今井亮佑、臼田宏治、小椋厚志
- Organizer
  第６１回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 有限要素法による異種の構造から導入される重畳応力の評価
- Author(s)
  富田基裕、小瀬村大亮、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125

1. NUMASAWA Youichiro (50569837)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. SAWAMOTO Naomi (20595087)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
3. Ohshita Yoshio (10329849)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 廣沢一郎 (00360834)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
5. 小瀬村大亮 (00608284)

# of Collaborated Projects: 1 results

# of Collaborated Products: 49 results
6. 高田俊和 (20500458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 町田英明 (30535670)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. USUDA Koji

# of Collaborated Projects: 1 results

# of Collaborated Products: 37 results
9. 木村正和

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OGURA ATSUSHI 小椋 厚志

小椋 厚志 オグラ アツシ

Research Projects

Research Products

Co-Researchers

Energy strage system with recycled hydrogen carriers

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Multi-axial analysis of strain states introduced in nano area on Ge and SiGe super-thin films by Raman spectroscopyPrincipal Investigator

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LSIプロセスによりシリコン結晶に導入された結晶歪の精密分布測定に関する研究Principal Investigator

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シリコン最表面の微小領域に導入された結晶歪の精密分布測定に関する研究Principal Investigator

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[Book] Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectrosopy2012

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Data Source

[Journal Article] In-Plane Biaxial Strain Evaluation Induced in Ge1-XSnx Films Using Oil-Immersion Raman Spectroscopy2016

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DOI

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[Journal Article] Examination of phonon deformation potentials for accurate strain measurements in silicon-germanium alloys with the whole composition range by Raman spectroscopy2016

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DOI

NAID

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[Journal Article] Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon-germanium films2016

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DOI

NAID

Data Source

[Journal Article] Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy2016

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DOI

NAID

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[Journal Article] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015

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DOI

Data Source

[Journal Article] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015

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[Journal Article] Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy2014

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[Journal Article] Electrical field analysis of metal-surface plasmon resonance using a biaxially strained Si substrate2014

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[Journal Article] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014

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DOI

OGURA ATSUSHI 小椋厚志

小椋厚志オグラアツシ

[Journal Article] Origin of additional broad peaks in Raman spectra　from thin germanium-rich silicon-germanium films2016

[Journal Article] Electrical field analysis of　metal-surface plasmon resonance using a biaxially strained Si substrate2014