Nishiguchi Katsuhiko 西口克彦

… Alternative Names

NISHIGUCHI Katsuhiko 西口克彦

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Researcher Number	00393760
Other IDs
Affiliation (Current)	2025: 日本電信電話株式会社NTT物性科学基礎研究所, フロンティア機能物性研究部, 特別研究員
Affiliation (based on the past Project Information) *help	2014: 日本電信電話株式会社, NTT物性科学基礎研究所量子電子物性研究部, 主任研究員 2011: 日本電信電話株式会社NTT物性科学基礎研究所, 特別研究員 2010 – 2011: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 特別研究員 2009: 日本電信電話(株), 物性科学基礎研究所, 研究主任 2007 – 2009: NTT Basic Research Laboratories, Physical Science Laboratry, Research scientist … More 2007 – 2008: 日本電信電話(株), 物性科学基礎研究所, 研究員 2005 – 2007: NTT物性科学基礎研究所, 量子電子物性研究部, 研究員 2004 – 2006: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 研究員 Less
Review Section/Research Field	Except Principal Investigator Microdevices/Nanodevices / Electron device/Electronic equipment / Science and Engineering
Keywords	Except Principal Investigator 電子デバイス・機器 / 少数電子素子 / シリコン / フレキシブル論理ゲート / 揺らぎ許容デバイス / 省エネルギー / 先端機能デバイス / 量子ドット / Flexible Logic Gats / Integrated Devices … More / Silicon / Nano Materials / Electron Devices&Systems / Low Power Consumption / Quantum Dots / Device with Few Electron Regime / 集積化デバイス / ナノ材料 / single-electron turnstile / acceptor / dopant / single electron / donor / 単電子ターンスタイル / アクセプタ / ドーパント / 単一電子 / ドナー / ドーパントエンジニアリング / 単一ドーパント / 少数電子デバイス / マイクロナノデバイス / 抵抗変化メモリ / 量子情報処理デバイス / フレキシブルデバイス / 省エネルギーデバイス / 抵抗変化素子 / ナノ物性制御 / マイクロ・ナノデバイス / ナノ・マイクロ科学 / 単一電子制御 / シングルドーパント / 集積回路 / 単電子転送 / 単電子デバイス / 低消費電力 / 単量子デバイス Less

Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM
- Principal Investigator
  
  TAKAHASHI Yasuo
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hokkaido University
Silicon Single-Dopant Electronics
- Principal Investigator
  
  ONO Yukinori
- Project Period (FY)
  2008 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  NTT Basic Research Laboratories
シリコンナノドットを用いた論理機能選択デバイス
- Principal Investigator
  
  TAKAHASHI Yasuo
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Studies on single-electron devices and circuits based on silicon integrated circuit process
- Principal Investigator
  
  INOKAWA Hiroshi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Shizuoka University
Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array
- Principal Investigator
  
  TAKAHASHI Yasuo
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Hokkaido University
Control of single electrons using bonor levels in silicon
- Principal Investigator
  
  ONO Yukinori
- Project Period (FY)
  2004 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  NTT Basic Research Laboratories

All 2014 2011 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation Book Patent

[Book] Silicon Single-Electron Devices, in" Device Applications of Silicon Nanocrystals and Nanostructures eds2009
- Author(s)
  Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokaw, N. Koshida
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-20241036
[Book] Device Applications of Silicon Nanocrystals and Nanostructures(Silicon Single-Electron Devices)2009
- Author(s)
  Y.Takahashi, Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-20241036
[Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.)2009
- Author(s)
  Yasuo Takahashi, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19310093
[Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology2008
- Author(s)
  Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Katsuhiko Nishiguchi, Akira Fujiwara
- Publisher
  Wiley-VCH
- Data Source
  KAKENHI-PROJECT-19310093
[Book] Information Technology II (volume 4) of Nanotechnology2008
- Author(s)
  Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, A. Fujiwara
- Total Pages
  23
- Publisher
  Wiley-VCH Verlag
- Data Source
  KAKENHI-PROJECT-20241036
[Book] Information Technology II (volume 4) of Nanotechnology(Single-electron transistor and its logic application)2008
- Author(s)
  Y.Ono, K.Nishiguchi, H.Inokawa, Y.Takahashi, A.Fujiwara
- Publisher
  Wiley-VCH Verlag
- Data Source
  KAKENHI-PROJECT-20241036
[Book] Single-electron transistor and its logic application, in "Information Technology II(volume 4) of Nanotechnology"2008
- Author(s)
  Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi and A. Fujiwara
- Publisher
  Wiley-VCH Verlag
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Single-electron thermal noise2014
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara
- Journal Title
  
  Nanotechnology
  
  Volume: 25 Issue: 27 Pages: 275201-275201
- DOI
  10.1088/0957-4484/25/27/275201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360128
[Journal Article] Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers2011
- Author(s)
  H. Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, M. Notomi
- Journal Title
  
  Optics Express
  
  Volume: Vol.19, No.25 Pages: 2525-2562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Single-electron counting statistics of shot noise in nanowire Si MOSFETs2011
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.98, No.19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.98, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Slngle-electron counting statistics of shot noise in nanowire Simetal-oxide-semiconductor field-effect transistors2011
- Author(s)
  K.Nishiguchi
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.98 Issue: 19
- DOI
  10.1063/1.3589373
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor-field-effect transistors2011
- Author(s)
  J.Noborisaka, K.Nishiguchi, Y.Ono, H.Kageshima, A.Fujiwara
- Journal Title
  
  Appl.Phys.Lett. Vol.98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors2010
- Author(s)
  J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.96, No.11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Resonant escape over an oscillating barrier in a single-electron ratchet transfer2010
- Author(s)
  S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
- Journal Title
  
  Phys. Rev. B
  
  Volume: Vol.82, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009
- Author(s)
  M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
- Journal Title
  
  Applied Physics Letters Vol.94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009
- Author(s)
  M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
- Journal Title
  
  Appl.Phys.Lett. Vol.94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009
- Author(s)
  M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.94, No.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures2009
- Author(s)
  K.Takashina, K.Nishiguchi, Y.Ono, A.Fujiwara, T.Fujisawa, Y.Hirayama, K.Muraki
- Journal Title
  
  Applied Physics Letters Vol.94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures2009
- Author(s)
  K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.94, No.14
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature2009
- Author(s)
  K Nishiguchi, A Fujiwara
- Journal Title
  
  Nanotechnology Vol.20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors2008
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Phys. Lett Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Silicon Single-Charge Transfer Devices2008
- Author(s)
  小野, 藤原, 西口, 高橋, 猪川
- Journal Title
  
  Journal of Physics and Chemistry of Solid 69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2008
- Author(s)
  Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Sur. Sci
  
  Volume: Vol.254, No.19 Pages: 6252-6256
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Silicon Single-Charge Transfer Devices2008
- Author(s)
  Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, H. Inokawa
- Journal Title
  
  Journal of Physics and Chemistry of Solid 69
  
  Pages: 702-707
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor2008
- Author(s)
  Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
- Journal Title
  
  Appl. Phys. Lett Vol.93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  K. Nishiguchi
- Journal Title
  
  Appl. Phys. Lett. 92
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Silicon single-charge transfer devices2008
- Author(s)
  Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa
- Journal Title
  
  J. Phys. Chem. Solids 69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Silicon singlecharge transfer devices2008
- Author(s)
  Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa
- Journal Title
  
  J. Phys. Chem. Solid Vol.69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
- Journal Title
  
  Applied Physics Letters 92
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  西口, 小野, 藤原, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor2008
- Author(s)
  2. K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.47
  
  Pages: 8305-8310
- NAID
  40016346937
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors2008
- Author(s)
  K. Nishiguchi
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Journal Title
  
  Appl. Phys. Lett Vol.92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on sigle electrons using nano field-effect transistors,2008
- Author(s)
  西口, 小野, 藤原, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor2008
- Author(s)
  Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi
- Journal Title
  
  Jpn. J. Appl. Phys Vol.47
  
  Pages: 8305-8310
- NAID
  40016346937
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  西口克彦
- Journal Title
  
  Applied Physics Letters 92
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  A. Fujiwara, K. Nishiguchi, and Y. Ono
- Journal Title
  
  Appl. Phys. Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008
- Author(s)
  S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: Vol.93, No.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Phys. Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Silicon Single-Charge Transfer Devices2008
- Author(s)
  小野, 藤原, 西口, 高橋, 猪川
- Journal Title
  
  Journal of Physics and Chemistry of Solid 69
  
  Pages: 702-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Single-electron-resolution electrometer based on field-effect transistor2008
- Author(s)
  K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.47, No.11 Pages: 8305-8310
- NAID
  40016346937
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008
- Author(s)
  K.Nishiguchi
- Journal Title
  
  Appl.Phys.Lett. 92
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor2008
- Author(s)
  S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett. Vol.93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2008
- Author(s)
  Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
- Journal Title
  
  Appl. Sur. Science Vol.254
  
  Pages: 6252-6256
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor2008
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Jpn.J.Appl.Phys. 47
  
  Pages: 8305-8310
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs2008
- Author(s)
  Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono, Hiroaki Satoh
- Journal Title
  
  IEEJ Trans. EIS Vol.128
  
  Pages: 905-911
- NAID
  10021132673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor2007
- Author(s)
  W.C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N.J. Wu
- Journal Title
  
  IEICE Trans. Electron Vol.E90C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310093
[Journal Article] Fast All-Optical Switching using Ion-Implanted Silicon Photonic Crystal Nanocavities2007
- Author(s)
  T. Tanabe, K. Nishiguchi, A. Shinya, E. Kuramochi, H. Inokawa, M. Notomi
- Journal Title
  
  Applied Physics Letters 90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Conductance modulation by individual acceptors in Si nano-scale field-effect transistors2007
- Author(s)
  小野, 西口, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long retention of gain-cell dynamic random access memory with undoped memory node2007
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  EEE Electron Device Letters Vol.28,No.1
  
  Pages: 48-50
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors2007
- Author(s)
  W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu
- Journal Title
  
  IEICE Transactions of Electron E90-C, No. 5
  
  Pages: 943-948
- NAID
  110007519656
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long-retention gain cell dynamic random-access memory using undoped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2007
- Author(s)
  西口, 藤原, 小野, 猪川, 高橋
- Journal Title
  
  IEEE Electron Device Letter 28
  
  Pages: 48-50
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors2007
- Author(s)
  W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu
- Journal Title
  
  IEICE Trans. Electron. E-90C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Infrared detection with silicon nano transistors2007
- Author(s)
  西口克彦
- Journal Title
  
  Applied Physics Letters 90
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors2007
- Author(s)
  W. C. Zhang, 西口, 小野, 藤原, 山口, 猪川, 高橋, N. J. Wu
- Journal Title
  
  IEICE Transactions of Electron E90-C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors2007
- Author(s)
  田辺, 西口, 新家, 倉持, 猪川, 納富
- Journal Title
  
  Applied Physics Letters 90
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Infrared detection with silicon nano transistors2007
- Author(s)
  西口, 小野, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Identification of single and coupled acceptors in silicon nano field-effect transistors2007
- Author(s)
  M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett. 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Conductance modulation by individual acceptors in Si nano-scale field-effect transistors2007
- Author(s)
  小野, 西口, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] シリコントランジスタにおける不純物伝導2007
- Author(s)
  小野, J.F.Morizur, 西口, 高品, 山口, 平塚, 堀口, 猪川, 高橋
- Journal Title
  
  日本学術振興会151委員会・平成19年1月研究会「シリコン系デバイス・材料の新展開」
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long retention of gain-cell dynamic random access memory with undoped memory node2007
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  EEE Electron Device Letters Vol.28, No.1
  
  Pages: 48-50
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Infrared detection with silicon nano transistors2007
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi
- Journal Title
  
  Applied Physics Letters 90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long retention of gain-cell dynamic random access memory with undoped memory node2007
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  EEE Electron Device Letters Vol. 28, No. 1
  
  Pages: 48-50
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Long-retention gain cell dynamic random-access memory using undoped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2007
- Author(s)
  K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 48-50
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors2007
- Author(s)
  W.C. Zhang, 西口, 小野, 藤原, 山口, 猪川, 高橋, N.J. Wu
- Journal Title
  
  IEICE Transactions of Electron E90-C
  
  Pages: 943-948
- NAID
  110007519656
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026001
[Journal Article] Conductance modulation by individual acceptors in Si nano-scale field-effect transistors2007
- Author(s)
  Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi
- Journal Title
  
  Applied Physics Letters 90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long-retention gain cell dynamic random-access memory using undoped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2007
- Author(s)
  西口克彦
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 48-50
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Infrared detection with silicon nano transistors2007
- Author(s)
  西口, 小野, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Single-Electron Transfer in Silicon : Towards Single-Dopant Electronics2006
- Author(s)
  小野, 藤原, 西口, 堀口, 高橋, 猪川
- Journal Title
  
  Collected Papers of Quantum Nanoelectronics Workshop of The 3rd International Symposium on Ubiquitous Knowledge Network Environment
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] アンドープSOI-MOSFETを用いたデータ保持特性の長いゲインセルDRAM2006
- Author(s)
  西口, 藤原, 小野, 山口, 猪川, 高橋
- Journal Title
  
  応用物理学会シリコンテクノロジー研究集会「次世代デバイスへのブレークスルー=三次元化の試み」 85
  
  Pages: 40-44
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature-operating data processing circuit using single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  西口克彦
- Journal Title
  
  Applied Physics Letters 88
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K2006
- Author(s)
  小野, J.-F.Morizur, 西口, 高品, 山口, 平塚, 堀口, 猪川, 高橋
- Journal Title
  
  Physical Review B 96
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Long-retention gain-cell DRAM using undoped SOI MOSFET2006
- Author(s)
  西口, 藤原, 小野, 猪川, 高橋
- Journal Title
  
  2006 Silicon Nanoelectronics Workshop
  
  Pages: 101-102
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] リンドープNチャネルSOI MOSFET伝導特性のドーパント濃度依存性(2)2006
- Author(s)
  小野, 西口, 高品, 堀口, 高橋, 猪川
- Journal Title
  
  春季応用物理学会 2
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors, Multiple-Valued and Mixed-Mode Logic2006
- Author(s)
  出川, 青木, 樋口, 猪川, 西口, 高橋
- Journal Title
  
  Proceedings of the 35th IEEE International Symposium on Multiple-Valued Logi
  
  Pages: 19-24
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Applied Physice Letters Vol. 88, No. 18
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] アンドープSOI-MOSFETを用いたデータ保持特性の長いゲインセルDRAM2006
- Author(s)
  西口, 小野, 藤原, 山口, 猪川, 高橋
- Journal Title
  
  秋季応用物理学会 2
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Transfer and detection of single-electron using metal-oxide-semiconductor field-effect transistors2006
- Author(s)
  W.C.Zhang, 西口, 小野, 藤原, 猪川, 高橋, N.J.Wu
- Journal Title
  
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
- NAID
  110007519656
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors, Multiple-Valued and Mixed-Mode Logic2006
- Author(s)
  K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, K. Nishiguchi, Y. Takahashi
- Journal Title
  
  Proceedings of the 36th IEEE International Symposium on Multiple-Valued Logic (IEEE Computer Society)
  
  Pages: 19-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Applied Physics Letters Vol.88,No.18
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Metal-Oxide-Semiconductor-Based Single-Electronics2006
- Author(s)
  猪川, 西口, 藤原, 小野, 高橋
- Journal Title
  
  The 5-th annual International Conference on Global Research and Education
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] シリコン単電子デバイスの集積化と新展開2006
- Author(s)
  猪川, 西口, 藤原, 小野, 高橋
- Journal Title
  
  電気学会電子・情報・システム部門大会
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor-technology2006
- Author(s)
  西口, 藤原, 小野, 猪川, 高橋
- Journal Title
  
  2006 Silicon Nanoelectronics Workshop
  
  Pages: 23-24
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature-operating data processing circuit based on single-electron transfer and detection with melal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Applied Physics Letters Vol.88, No.18
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Room-temperature-operating data processing circuit using single electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  西口, 藤原, 小野, 猪川, 高橋
- Journal Title
  
  Applied Physics Letters 88
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] シリコン単電子デバイス2006
- Author(s)
  西口, 藤原, 小野, 山口, 猪川, 高橋
- Journal Title
  
  第3回オープンワークショップ「バイオとナノテクノロジーの融合研究」
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Impurity conduction and its control in SOI MOSFETs towards silicon single-dopant electronics2006
- Author(s)
  小野, 西口, 藤原, 堀口, 猪川, 高橋
- Journal Title
  
  2006 Silicon Nanoelectronics Workshop
  
  Pages: 111-112
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] リンドープSOI MOSFETにおける不純物伝導2006
- Author(s)
  小野, 西口, 高品, 山口, 猪川, 堀口, 高橋
- Journal Title
  
  秋季応用物理学会 2
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] 室温動作可能なMOSFET技術による単一電子伝送と検出を利用した情報処理回路2006
- Author(s)
  西口, 小野, 藤原, 猪川, 高橋
- Journal Title
  
  春季応用物理学会 2
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature-Fabrication using SOI and measurements of its characteristics-2006
- Author(s)
  K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, Y. Takahashi
- Journal Title
  
  IEICE Technical Report Vol.105, No.549
  
  Pages: 23-28
- NAID
  110004078849
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] FET技術を利用した単一電子転送・検出シリコンデバイスとその応用2006
- Author(s)
  西口, 猪川, 小野, 藤原, 高橋
- Journal Title
  
  電子情報通信学会技術研究報告 ED2005-226 105-No.549
  
  Pages: 23-28
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Room-temperature-operating data processing circuit using single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology2006
- Author(s)
  K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi
- Journal Title
  
  Applied Physics Letters 88
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K2006
- Author(s)
  Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, Hi. Yamaguchi, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi
- Journal Title
  
  Physical Review B 74
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires2005
- Author(s)
  西口克彦
- Journal Title
  
  Japanese Journal of Applied Physics 44
  
  Pages: 7717-7719
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires2005
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44,No.10
  
  Pages: 7717-7719
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Manipulation and detection of single electrons for future information processing2005
- Author(s)
  Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa, Y.Takahashi
- Journal Title
  
  Applied Physics Letters Vol.97, No.3
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Single-Electron Devices : and Circuits Based on MOS Processes2005
- Author(s)
  猪川, 小野, 藤原, 西口, 高橋
- Journal Title
  
  2005 TND Technical Forum
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistors2005
- Author(s)
  Y.Ono, K.Nishiguchi, H.Inokawa, S.Horiguchi, Y.Takahashi
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, No.4B(to be published)
- NAID
  10015704970
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Back-gate effect on Coulomb Blockade in silicon-on-insulator trench wires2005
- Author(s)
  西口, Olever Crauste, 生津, 堀口, 小野, 藤原, 高橋, 猪川
- Journal Title
  
  Japanese Journal of Applied Physics 44
  
  Pages: 7717-7719
- NAID
  130004766081
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] SOIトレンチ構造・単一電子素子におけるクーロンブロッケイドへの基板電圧効果2005
- Author(s)
  西口, O.Crauste, 生津, 堀口, 小野, 藤原, 高橋, 猪川
- Journal Title
  
  第66回応用物理学会学術講演会講演予稿集 No.2
  
  Pages: 748-748
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires2005
- Author(s)
  Katsuhiko Nishiguchi
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, No.10
  
  Pages: 7717-7719
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] リンドープNチャネルSOI MOSFET伝導特性のドーパント濃度依存性2005
- Author(s)
  小野, 西口, 堀口, 高橋, 猪川
- Journal Title
  
  第66回応用物理学会学術講演会講演予稿集 No.2
  
  Pages: 737-737
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires2005
- Author(s)
  K. Nishiguchi, Oliver Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa
- Journal Title
  
  Japanese Journal of Applied Physics 44
  
  Pages: 7717-7719
- NAID
  130004766081
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor2005
- Author(s)
  Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, Y. Takahashi
- Journal Title
  
  Japanese Journal of Applied Physics 44
  
  Pages: 2588-2591
- NAID
  10015704970
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Journal Article] Multilevel memory using an electrically formed single-electron box2004
- Author(s)
  K.Nishiguchi, H.Inokawa, Y.Ono, A.Fujiwara, Y.Takahashi
- Journal Title
  
  Applied Physics Letters Vol.85, No.7
  
  Pages: 1277-1279
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Multilevel memory using an electrically formed single-electron box2004
- Author(s)
  K.Nishiguchi
- Journal Title
  
  Applied Physics Letters Vol.85,No.7
  
  Pages: 1277-1279
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206038
[Journal Article] Multilevel memory using an electrically formed single-electron box2004
- Author(s)
  K. Nishiguchi
- Journal Title
  
  Applied Physics Letters Vol.85, No.7
  
  Pages: 1277-1279
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Patent] 半導体装置2004
- Inventor(s)
  小野行徳, 西口克彦, 猪川洋
- Industrial Property Rights Holder
  NTT
- Industrial Property Number
  2004-238091
- Filing Date
  2004-08-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Single dopant effects in silicon nano transistors2010
- Author(s)
  Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
- Organizer
  Single Dopant Control
- Place of Presentation
  Leiden, Netherlands
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single dopant effects in silicon nano transistors2010
- Author(s)
  Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
- Organizer
  Single Dopant Control
- Place of Presentation
  Leiden, Netherlands(招待講演)
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single dopant effects in silicon nano transistors2010
- Author(s)
  Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
- Organizer
  2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era
- Place of Presentation
  southampton, UK
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single dopant effects in silicon nano transistors2010
- Author(s)
  Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
- Organizer
  2010 International Symposium on Atom-scale Silicon HybridNanotechnologies for 'More-than-Moore'& 'Beyond CMOS' Era
- Place of Presentation
  Southampton, UK(招待講演)
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Fabrication of triple-dot single-electron transistor and its single-electron- transfer operation2009
- Author(s)
  M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J. -B. Choi
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  Kaanapali, Hawaii
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Identification of single dopants in nanowire MOSFETs2009
- Author(s)
  Y.Ono, M.Khalafalla, S.Horiguchi, K.Nishiguchi, A.Fujiwara
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sendai(招待講演)
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single-electron counting statistics of shot noise in nanowire Si MOSFETs2009
- Author(s)
  K. Nishiguchi
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier2009
- Author(s)
  K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, K. Muraki
- Organizer
  International Symposium on Nanoscale Transport and Technology, (ISNTT-2009)
- Place of Presentation
  Atsugi, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Detection and position analysis of sinle and coupled acceptors in silicon nano field-effect transistors2009
- Author(s)
  M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara
- Organizer
  International Symposium on Nanoscale Transport and Technology, (ISNTT-2009)
- Place of Presentation
  Atsugi, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Detection and position analysis of sinle and coupled acceptors in silicon nano field-effect transistors2009
- Author(s)
  M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
- Organizer
  2009 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Identification of single dopants in nanowire MOSFETs2009
- Author(s)
  Y.Ono, M.Khalafalla, S.Horiguchi, K.Nishiguchi, A.Fujiwara :
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single-Dopant Effect in Si MOSFETs2008
- Author(s)
  Y. Ono, M.A.H. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  The IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Single-dopant effect in Si MOSFETs2008
- Author(s)
  Y. Ono, M. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] シリコンナノドットを用いた論理機能選択デバイス2008
- Author(s)
  高橋、有田、藤原、西口、開澤
- Organizer
  特定領域研究「ポストスケール」第2回成果報告会
- Place of Presentation
  秋葉原コンベンションホール
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Single-dopant effect in Si MOSFETs2008
- Author(s)
  Y.Ono, M.Khalafalla, A.Fujiwara, K.Nishiguchi, K.Takashina, S.Horiguchi, Y.Takahashi, H.Inokawa
- Organizer
  IEEE Nanotechonology Materials and Devices Conference 2008
- Place of Presentation
  Kyoto(招待講演)
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Single-electron devices and their circuit applications2008
- Author(s)
  A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, Y. Takahashi : (invited)
- Organizer
  2008 Tera-level nanodevices (TND) Technical Forum
- Place of Presentation
  Korea
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Escape dynamics of electron in a single-electron ratchet using silicon nanowire MOSFETs2008
- Author(s)
  S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Ito, A. Fujiwara
- Organizer
  IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Escape dynamics of electrons in a single-electron ratchet using silicon nanowire MOSFETs2008
- Author(s)
  Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
- Organizer
  The IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier2008
- Author(s)
  K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa
- Organizer
  IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Hopping conduction in buried-channel SOI MOSFETs with shallow impurities2007
- Author(s)
  Y. Ono, J.-F. Morizur, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, K. Hiratsuka, S. Horiguchi, H. Inokawa, Y. Takahashi
- Organizer
  International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction, (NNCI 2007)
- Place of Presentation
  Atsugi
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Dopant-mediated charge transport in boron-doped nano MOSFETs2007
- Author(s)
  Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, H. Yamaguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
- Organizer
  2007 Silicon Nanoelectronics Workshop (SNW-07)
- Place of Presentation
  Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2007
- Author(s)
  Y. One, M. Khalafalla, K. Nishiguchi, K. Takashina, and A. Fujiwara
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Dopant-mediated charge transport in boron-doped nano MOSFETs2007
- Author(s)
  小野, M. Khalafalla, 西口, 高品, 山口, 藤原, 堀口, 猪川, 高橋
- Organizer
  2007 Silicon Nanoelectronics Workshop(SNW-07)
- Place of Presentation
  京都リガロイヤルホテル
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Room-temperature-operating single-electron devices using silicon nanowire MOSFET2007
- Author(s)
  Katsuhiko Nishiguchi
- Organizer
  2007Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Gyeongju,Korea
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs2007
- Author(s)
  H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, H. Satoh
- Organizer
  The 6th International Conference on Global Research and Education
- Place of Presentation
  Hamamatsu
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Room-temperatureoperating single-electron devices using silicon nanowire MOSFET2007
- Author(s)
  Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
- Organizer
  2007 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Influence of doping concentration on current characteristics of phosphorous-doped n-channel SOI MOSFETs (II)2007
- Author(s)
  Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, S. Horiguchi, Y. Takahashi
- Organizer
  The 54th Spring Meeting of The Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Aoyama Gakuinn Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs2007
- Author(s)
  猪川, 藤原, 西口, 小野, 佐藤
- Organizer
  The 6th International Conference on Global Research and Education
- Place of Presentation
  浜松:静岡大学
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effet Transistors2007
- Author(s)
  猪川, 藤原, 西口, 小野
- Organizer
  2007 Int. Conf. Solid State Devices and Materials (SSDM07)
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs2007
- Author(s)
  Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Organizer
  2007 Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics2007
- Author(s)
  小野, M.A.H. Khalafalla, 西口, 高品, 藤原, 堀口, 猪川, 高橋
- Organizer
  The Fifth International Symposium on Control of Semiconductor Interface
- Place of Presentation
  首都大学東京(八王子)
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Recent Progress in Integration of Silicon Single-Electron Devices2007
- Author(s)
  H. Inokawa, K. Nishiguchi, Y. Ono, A. Fujiwara, Y. Takahashi
- Organizer
  The 4th International Symposium on Ubiquitous Knowledge Network Environment
- Place of Presentation
  Sapporo (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] A simple test structure for extracting capacitances in nanometer-scale MOSFETs2007
- Author(s)
  H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh
- Organizer
  The 6-th annual International Conference on Global Research and Education
- Place of Presentation
  Inter-Academia, Hamamatsu
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Low-energy electron emission using a Si/SiO_2/Si cathode for nano-decomposition2007
- Author(s)
  西口, 永瀬, 山口, 藤原, 山口
- Organizer
  20th International Microprocesses and Nanotechnology Conference(MNC2007)
- Place of Presentation
  京都国際会館
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors2007
- Author(s)
  Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
- Organizer
  2007 Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19310093
[Presentation] シリコン・ナノトランジスタを用いた赤外線検出2007
- Author(s)
  西口, 克彦
- Organizer
  春季応用物理学会
- Place of Presentation
  青山学院大
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Dopant-mediated charge transport in boron-doped nano MOSFETs2007
- Author(s)
  小野, M. Khalafalla, 西口, 高品, 山口, 藤原, 堀口, 猪川, 高橋
- Organizer
  2007 Silicon Nanoelectronics Workshop (SNW-07)
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-19026001
[Presentation] Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics2007
- Author(s)
  Y. Ono, M. A. H. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
- Organizer
  The Fifth International Symposium on Control of Semiconductor Interface, (ISCSI-5)
- Place of Presentation
  Hachioji (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Infrared detection with silicon nano-transistors2007
- Author(s)
  K. Nishiguchi, A. Fujiwara, Y. Ono, H. Yamaguchi, H. Inokawa, Y. Takahashi
- Organizer
  The 54th Spring Meeting of The Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Aoyama Gakuinn Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Single-electron ratchet using silicon nanowie MOSFET2007
- Author(s)
  A. Fujiwara, K. Nishiguchi, and Y. Ono
- Organizer
  International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures
- Place of Presentation
  Genova Magazzini del Cotone, Italy
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Single-electron circuit for stochastic data processing using nano-MOSFETs2007
- Author(s)
  西口, 藤原
- Organizer
  International Electron Devices Meeting(LEDM)
- Place of Presentation
  Hilton, Washington, DC
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] 室温動作可能なMOSFET技術による単一電子伝送と検出を利用した情報処理回路2006
- Author(s)
  西口, 克彦
- Organizer
  春季応用物理学会
- Place of Presentation
  武蔵工大
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Long-retention gain-cell DRAM using undoped SOI MOSFET2006
- Author(s)
  西口, 克彦
- Organizer
  2006 Silicon Nanoelectronics Workshop (SNW-06)
- Place of Presentation
  Waikiki, Hawaii
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] アンドープSOI-MOSFETを用いたデータ保持特性の長いゲインセルDRAM2006
- Author(s)
  西口, 克彦
- Organizer
  秋季応用物理学会
- Place of Presentation
  立命館大
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] A High-Density Ternary Content-Addressable Memory Using Single-Electron Transistors2006
- Author(s)
  K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, K. Nishiguchi, Y. Takahashi
- Organizer
  The 36th IEEE International Symposium on Multiple-Valued Logic
- Place of Presentation
  Singapore
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor-technology2006
- Author(s)
  西口, 克彦
- Organizer
  2006 Silicon Nanoelectronics Workshop (SNW-06)
- Place of Presentation
  Waikiki, Hawaii
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Single-Electron Transistor in Silicon: Towards Single-Dopant Electronics2006
- Author(s)
  Y. Ono, A. Fujiwara, K. Nishiguchi, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  The 3rd International Symposium on Ubiquitous Knowledge Network Environment
- Place of Presentation
  Sapporo (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Transfer and detection of single-electron using metal-oxide-semiconductor field-effect transistors2006
- Author(s)
  W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi, N. J. Wu
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Sendai
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] MOSFET技術を利用した単一電子転送・検出シリコンデバイスとその応用2006
- Author(s)
  西口, 克彦
- Organizer
  電子情報通信学会技術報告電子デバイス研究会
- Place of Presentation
  北海道大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Infrared detection with silicon nano transistors2006
- Author(s)
  K.Nishiguchi
- Organizer
  2006 International Conference on Solid State Devices and Materials
- Place of Presentation
  Yokohama
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Influence of doping concentration on current characteristics of phosphorous-doped n-channel SOI MOSFETs2006
- Author(s)
  Y. Ono, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  The 53th Spring Meeting of The Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Musashi Institute of Technology
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Long-retention gain-cell DRAM using undoped SOI MOSFETs2006
- Author(s)
  K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi
- Organizer
  The 67th Autumn Meeting of The Japan Society of Applied Physics
- Place of Presentation
  Ritsumeikan Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Impurity conduction and its control in SOI MOSFETs towards silicon single-dopant electronics2006
- Author(s)
  Y. Ono, K. Nishiguchi, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
- Organizer
  2006 Silicon Nanoelectronics Workshop (SNW-06)
- Place of Presentation
  Waikiki, Hawaii (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Influence of doping concentration on current characteristics of phosphorous-doped n-channel SOI MOSFETs2006
- Author(s)
  Y. Ono, K. Nishiguchi, K. Takashina, H. Yamaguchi, H. Inokawa, S. Horiguchi, Y. Takahashi
- Organizer
  The 67th Autumn Meeting of The Japan Society of Applied Physics
- Place of Presentation
  Ritsumeikan Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Room-temperature operating data processing circuit based on single-electron transfer and detection with MOSFET technology2006
- Author(s)
  K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, Y. Takahashi
- Organizer
  The 53th Spring Meeting of The Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Musashi Institute of Technology
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Long-retention gain-cell DRAM using undoped SOI MOSFET2006
- Author(s)
  K. Nishiguchi
- Organizer
  2006 Silicon Nanoelectronics Workshop
- Place of Presentation
  Hawaii, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect-transistor technology.2006
- Author(s)
  K.Nishiguchi
- Organizer
  2006 Silicon Nanoelectronics Workshop
- Place of Presentation
  Hawaii,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Room-temperature operation of data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect-transistor technology.2006
- Author(s)
  K. Nishiguchi
- Organizer
  2006 Silicon Nanoelectronics Workshop
- Place of Presentation
  Hawaii, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Long-retention gain-cell DRAM using undoped SOI MOSFET2006
- Author(s)
  K.Nishiguchi
- Organizer
  2006 Silicon Nanoelectronics Workshop
- Place of Presentation
  Hawaii,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Back-gate effect on Coulomb blockade in SOI trench wires2005
- Author(s)
  K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, H. Inokawa
- Organizer
  The 66rh Autumn Meeting of The Japan Society of Applied Physics
- Place of Presentation
  Tokushima Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Silicon-based Single-Electron Devices2005
- Author(s)
  Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa
- Organizer
  4th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Awaji Island (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] SOI トレンチ構造・単一電子素子におけるクーロンブロッケイドへの基板電圧効果2005
- Author(s)
  西口, 克彦
- Organizer
  秋季応用物理学会
- Place of Presentation
  徳島大学
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Single-Electron Devices: and Circuits Based on MOS Processes2005
- Author(s)
  H. Inokawa, Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi
- Organizer
  2005 TND Technical Forum
- Place of Presentation
  Seoul, Korea (invited)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Back-gate effect on Coulomb blockade in SOI trench wires2005
- Author(s)
  K.Nishiguchi
- Organizer
  2005 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Back-gate effect to Coulomb blockade in SOI trench wires2005
- Author(s)
  西口, 克彦
- Organizer
  2005 Silicon Nanoelectronics Workshop (SNW-05)
- Place of Presentation
  Kyoto Royal Hotel
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Influence of doping concentration on current characteristics of phosphorous-doped n-channel SOI MOSFETs2005
- Author(s)
  Y. Ono, K. nishiguchi, S. Horiguchi, Y. Takahashi, H. Inokawa
- Organizer
  The 66rh Autumn Meeting of The Japan Society of Applied Physics
- Place of Presentation
  Tokushima Univ.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17201029
[Presentation] Room-temperature single-electron transfer and detection with silicon nanodevices2004
- Author(s)
  K. Nishiguchi
- Organizer
  IEEE International Electron Devices Meeting
- Place of Presentation
  San San Francisco, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206038
[Presentation] Room- temperature single-electron transfer and detection with silicon nanodevices2004
- Author(s)
  K.Nishiguchi
- Organizer
  IEEE International Electron Devices Meeting
- Place of Presentation
  San Francisco,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206038

1. TAKAHASHI Yasuo (90374610)

# of Collaborated Projects: 4 results

# of Collaborated Products: 73 results
2. FUJIWARA Akira (70393759)

# of Collaborated Projects: 4 results

# of Collaborated Products: 36 results
3. ARITA Masashi (20222755)

# of Collaborated Projects: 3 results

# of Collaborated Products: 1 results
4. INOKAWA Hiroshi (50393757)

# of Collaborated Projects: 3 results

# of Collaborated Products: 82 results
5. ONO Yukinori (80374073)

# of Collaborated Projects: 3 results

# of Collaborated Products: 47 results
6. TSUCHIYA Toshiaki (20304248)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. HORIGUCHI Seiji (60375219)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
8. YAMAGUCHI Toru (30393763)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. MOHAMMED Khalafalla (70463627)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. AMEMIYA Yoshihito (80250489)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Nishiguchi Katsuhiko 西口 克彦

NISHIGUCHI Katsuhiko 西口 克彦

Research Projects

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Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM

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Silicon Single-Dopant Electronics

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シリコンナノドットを用いた論理機能選択デバイス

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Studies on single-electron devices and circuits based on silicon integrated circuit process

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Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

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Control of single electrons using bonor levels in silicon

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[Book] Silicon Single-Electron Devices, in" Device Applications of Silicon Nanocrystals and Nanostructures eds2009

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[Book] Device Applications of Silicon Nanocrystals and Nanostructures(Silicon Single-Electron Devices)2009

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[Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.)2009

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[Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology2008

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[Book] Information Technology II (volume 4) of Nanotechnology2008

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[Book] Information Technology II (volume 4) of Nanotechnology(Single-electron transistor and its logic application)2008

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[Book] Single-electron transistor and its logic application, in "Information Technology II(volume 4) of Nanotechnology"2008

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[Journal Article] Single-electron thermal noise2014

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[Journal Article] Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers2011

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[Journal Article] Single-electron counting statistics of shot noise in nanowire Si MOSFETs2011

Nishiguchi Katsuhiko 西口克彦

NISHIGUCHI Katsuhiko 西口克彦