NEISHI Koji 根石浩司

Researcher Number	00404020
Other IDs	https://orcid.org/0000-0003-4088-1829
Affiliation (based on the past Project Information) *help	2014: 東北大学, 大学院工学研究科, 助教 2007 – 2008: 東北大学, 大学院・工学研究科, 助教 2006: 東北大学, 大学院工学研究科, 助手
Review Section/Research Field	Except Principal Investigator Structural/Functional materials
Keywords	Except Principal Investigator 電解促進拡散 / 対数成長則 / 電界促進拡散 / バリア層 / リフロー / 界面 / 半導体 / 配線 / 薄膜 / 銅合金 … More / 転位すべり / 破壊 / 双晶 / 変形 / マグネシウム Less

Principles for the development of a diffusion barrier layer to overcome the process limitations of multi-layer interconnects for semiconductor devices
- Principal Investigator
  
  KOIKE Junichi
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Tohoku University
Role of Deformation twinning on the deformation and fracture of magnesium alloys
- Principal Investigator
  
  KOIKE Junichi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Tohoku University

All 2011 2010

All Journal Article Presentation Patent

[Journal Article] Effects of adsorbed moisture in SiO_2 substrates on the formation of a Mn oxide layer by chemical vapor deposition2011
- Author(s)
  N.M.Phuong, K.Neishi, Y.Sutou, J.Koike
- Journal Title
  
  J.Physical Chemistry C
  
  Volume: 115 Issue: 34 Pages: 16731-16738
- DOI
  10.1021/jp201299w
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22226012
[Journal Article] Structure and electronic properties of a Mn oxide diffusion barrier layer formed by chemical vapor deposition2011
- Author(s)
  V.K.Dixit, K.Neishi, N.Akao, J.Koike
- Journal Title
  
  IEEE Trans.Device and Materials Reliability
  
  Volume: (accepted)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22226012
[Journal Article] Structural and electronic properties of a Mn oxide diffusion barrier layer formed by chemical vapor deposition2011
- Author(s)
  V.K.Dixit, K.Neishi, N.Akao, J.Koike
- Journal Title
  
  IEEE Trans.Device and Materials Reliability
  
  Volume: 11 Issue: 2 Pages: 295-302
- DOI
  10.1109/tdmr.2011.2141671
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22226012
[Journal Article] Effects of water desorption from SiO2 substrates on the thickness of manganese oxide diffusion barrier layer formed by chemical vapor deposition2010
- Author(s)
  K.Matsumoto, K.Neishi, H.Itoh, H.Miyoshi, H.Sato, S.Hosaka, J.Koike
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] 半導体装置の製造方法、半導体装置、電子機器、半導体製造装置及び記憶媒体2010
- Inventor(s)
  松本賢治、伊藤仁、佐藤浩、小池淳一、根石浩司
- Industrial Property Rights Holder
  東北大学、東京エレクトロン
- Filing Date
  2010-07-12
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法2010
- Inventor(s)
  根石浩司、小池淳一、柴富昭洋
- Industrial Property Rights Holder
  東北大学、先端配線材料研究所
- Industrial Property Number
  2010-016550
- Filing Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] 成膜方法、前処理装置及び処理系統2010
- Inventor(s)
  松本賢治、保坂重敏、根石浩司、小池淳一
- Industrial Property Rights Holder
  東北大学、東京エレクトロン
- Filing Date
  2010-06-15
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] 成膜方法、前処理装置及び処理系統2010
- Inventor(s)
  松本賢治、保坂重敏、根石浩司、小池淳一
- Industrial Property Rights Holder
  東北大学、東京エレクトロン
- Filing Date
  2010-06-16
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] 半導体装置の製造方法、半導体装置、電子機器、半導体製造装置及び記憶媒体2010
- Inventor(s)
  松本賢治、伊藤仁、佐藤浩、小池淳一、根石浩司
- Industrial Property Rights Holder
  東北大学、東京エレクトロン
- Filing Date
  2010-07-27
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] Contact plug structure, semiconductor device, and method for forming contact plug2010
- Inventor(s)
  小池淳一、柴富昭洋、根石浩司
- Industrial Property Rights Holder
  東北大学、先端配線材料研究所
- Filing Date
  2010-09-07
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Patent] 金属酸化膜の成膜方法、酸化マンガンの成膜方法及びコンピュータ読み取り可能な記憶媒体2010
- Inventor(s)
  松本賢治、根石浩司、小池淳一
- Industrial Property Rights Holder
  東北大学、東京エレクトロン
- Filing Date
  2010-09-17
- Overseas
- Data Source
  KAKENHI-PROJECT-22226012
[Presentation] Novel Cu alloy interconnections for advanced semiconductors and displays2010
- Author(s)
  J.Koike, S.M.Chung, K.Neishi, Y.Sutou
- Organizer
  2010 i-SEDEX
- Place of Presentation
  Seoul, Korea(招待)
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-22226012

1. KOIKE Junichi (10261588)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
2. 山崎仁丈 (30292246)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SUTOU Yuji (80375196)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. ANDO Daisuke (50615820)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NEISHI Koji 根石 浩司

Research Projects

Research Products

Co-Researchers

Principles for the development of a diffusion barrier layer to overcome the process limitations of multi-layer interconnects for semiconductor devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Role of Deformation twinning on the deformation and fracture of magnesium alloys

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Effects of adsorbed moisture in SiO_2 substrates on the formation of a Mn oxide layer by chemical vapor deposition2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Structure and electronic properties of a Mn oxide diffusion barrier layer formed by chemical vapor deposition2011

Author(s)

Journal Title

Data Source

[Journal Article] Structural and electronic properties of a Mn oxide diffusion barrier layer formed by chemical vapor deposition2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effects of water desorption from SiO2 substrates on the thickness of manganese oxide diffusion barrier layer formed by chemical vapor deposition2010

Author(s)

Journal Title

Data Source

[Patent] 半導体装置の製造方法、半導体装置、電子機器、半導体製造装置及び記憶媒体2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法2010

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Patent] 成膜方法、前処理装置及び処理系統2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] 成膜方法、前処理装置及び処理系統2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] 半導体装置の製造方法、半導体装置、電子機器、半導体製造装置及び記憶媒体2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] Contact plug structure, semiconductor device, and method for forming contact plug2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] 金属酸化膜の成膜方法、酸化マンガンの成膜方法及びコンピュータ読み取り可能な記憶媒体2010

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Presentation] Novel Cu alloy interconnections for advanced semiconductors and displays2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

NEISHI Koji 根石浩司