Takahashi Mitsue 高橋光恵

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TAKAHASHI Mitsue 高橋光恵

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Researcher Number	00415704
Other IDs	https://orcid.org/0000-0003-2639-8742
Affiliation (Current)	2026: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2008: National Institute of Advanced Industrial Science and Technology, エレクトロニクス研究部門, 研究員 2007: National Institute of Advanced Industrial Science and Technology, エレクトロニクス研究部門, 研究員 2006: 独立行政法人産業技術総合研究所, エレクトロニクス研究部門, 研究員
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator 強誘電体 / 集積回路 / 電子デバイス

Study of fabrication processes of ferroelectric-gate FET for lowering the operation voltagePrincipal Investigator
- Principal Investigator
  
  TAKAHASHI Mitsue
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2007

All Presentation

[Presentation] Pt/SrBi2Ta2O9/HfO2/Si 強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007
- Author(s)
  堀内健史、大橋憲太郎、Shouyu Wang、Qiu-Hong Li、高橋光恵、酒井滋樹
- Organizer
  (社) 日本セラミックス協会北陸支部平成19年度秋季研究発表会
- Place of Presentation
  金沢工業大学, 石川県
- Year and Date
  2007-11-16
- Data Source
  KAKENHI-PROJECT-18686032
[Presentation] Pt/SrBi2Ta2O9/HfO2/Si MFIS FETへのSiN 層挿入の効果2007
- Author(s)
  堀内健史、高橋光恵、Shouyu Wang、Qiu-Hong Li、齊藤丈靖、大橋憲太郎、酒井滋樹
- Organizer
  第24回強誘電体応用会議 (FMA-24)
- Place of Presentation
  コープイン京都, 京都府
- Year and Date
  2007-05-26
- Data Source
  KAKENHI-PROJECT-18686032
[Presentation] Pt/SrBiTa209/HfO2/Si強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007
- Author(s)
  堀内健史, 大橋憲太郎, Shouyu Wang, Qiu-Hong Li, 高橋光恵, 酒井滋樹
- Organizer
  (社)日本セラミックス協会北陸支部平成19年度秋季研究発表会
- Place of Presentation
  金沢工業大学,石川県
- Year and Date
  2007-11-16
- Data Source
  KAKENHI-PROJECT-18686032

1. HORIUCHI Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results

Takahashi Mitsue 高橋光恵

TAKAHASHI Mitsue 高橋光恵

Research Projects

Research Products

Co-Researchers

Study of fabrication processes of ferroelectric-gate FET for lowering the operation voltagePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Presentation] Pt/SrBi2Ta2O9/HfO2/Si 強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Pt/SrBi2Ta2O9/HfO2/Si MFIS FETへのSiN 層挿入の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Pt/SrBiTa209/HfO2/Si強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Takahashi Mitsue 高橋 光恵

TAKAHASHI Mitsue 高橋 光恵

Research Projects

Research Products

Co-Researchers

Study of fabrication processes of ferroelectric-gate FET for lowering the operation voltagePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Presentation] Pt/SrBi2Ta2O9/HfO2/Si 強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Pt/SrBi2Ta2O9/HfO2/Si MFIS FETへのSiN 層挿入の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Pt/SrBiTa209/HfO2/Si強誘電体ゲートトランジスタへのシリコン表面窒化の効果2007

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Takahashi Mitsue 高橋光恵

TAKAHASHI Mitsue 高橋光恵