OHMORI Kenji 大毛利健治

Researcher Number	00421438
Other IDs
Affiliation (based on the past Project Information) *help	2007 – 2009: Waseda University, ナノ理工学研究機構, 准教授
Review Section/Research Field	Principal Investigator Science and Engineering / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator メタルゲート / high-k絶縁膜 / ゲートスタック / ショットキー障壁 / Niシリサイド / メタル・ソース・ドレイン / 極浅接合 / MOSFET / アモルファス / 偏析 … More / Mo(モリブデン) / Ru(ルテニウム) / Mo / Ru / TiM / 金属ガラス / C添加 / 特性ばらつき / 仕事関数 / 金属電極 / コンビナトリアル手法 Less

超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究Principal Investigator
- Principal Investigator
  
  大毛利健治
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発Principal Investigator
- Principal Investigator
  
  大毛利健治
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
Nano-scale control of metal/high-k dielectric gate stack structuresPrincipal Investigator
- Principal Investigator
  
  OHMORI Kenji
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Waseda University

All 2010 2009 2008 2007

All Journal Article Presentation Patent

[Journal Article] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Journal Title
  
  ECS Transactions 13(未定(印刷中))
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026014
[Journal Article] Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electronbeaminduced cur rent technique2008
- Author(s)
  T. Sekiguchi, J. Chen, N. Fukata, K. Ohmori, T. Chikyow, et.al.
- Journal Title
  
  Solid State Phenomena 131-133
  
  Pages: 449-454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035013
[Journal Article] Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Journal Title
  
  ECS Transactions 13(未定)(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760027
[Journal Article] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates2008
- Author(s)
  K. Ohmori, T. Matsuki, D. Ishikawa, K. Shiraishi, et.al.
- Journal Title
  
  Technical Digest of International Electron Devices Meeting
  
  Pages: 409-412
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760027
[Journal Article] Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Journal Title
  
  ECS Transactions 13
  
  Pages: 201-201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760027
[Journal Article] Pliant epitaxial ionic oxides on silicon2008
- Author(s)
  D. Kukuruznyak, H. Reichert, K. Ohmori, P. Ahmet, T. Chikyow
- Journal Title
  
  Advanced Materials 20
  
  Pages: 3827-3831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760027
[Journal Article] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates2008
- Author(s)
  K. Ohmori, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, T. Chikyow, K. Shiraishi, Y. Nara, K. Yamada
- Journal Title
  
  Technical Digest of International Electron Devices Meeting
  
  Pages: 409-409
- Data Source
  KAKENHI-PROJECT-19760027
[Journal Article] Pliant epitaxial ionic oxides on silicon2008
- Author(s)
  Dmitry Kukuruznyak, Harald Reichert, Kenji Ohmori, Parhat Ahmet, Toyohiro Chikyow
- Journal Title
  
  Advanced Materials 20
  
  Pages: 3827-3827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760027
[Patent] Siナノワイヤのシリサイドの形成方法2010
- Inventor(s)
  山田啓作、大毛利健治, 他
- Industrial Property Rights Holder
  早稲田大学、東工大
- Industrial Property Number
  2010-079972
- Filing Date
  2010-03-31
- Data Source
  KAKENHI-PROJECT-20035013
[Patent] 金属電極及びこれを用いた半導体素子2008
- Inventor(s)
  大毛利健治、知京豊裕
- Industrial Property Rights Holder
  早稲田大学、物質・材料研究機構
- Filing Date
  2008-12-08
- Data Source
  KAKENHI-PROJECT-19760027
[Patent] 金属電極及びこれを用いた半導体素子2008
- Inventor(s)
  大毛利健治、知京豊裕
- Industrial Property Rights Holder
  早稲田大学、NIMS
- Filing Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-19760027
[Patent] 金属電極及びこれを用いたCMOS回路2007
- Inventor(s)
  大毛利健治、知京豊裕
- Industrial Property Rights Holder
  早稲田大学物質・材料研究機構
- Industrial Property Number
  2007-317614
- Filing Date
  2007-12-07
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Siナノワイヤトランジスタの電気特性の断面形状依存性2010
- Author(s)
  佐藤創志、新井英明、角嶋邦之、大毛利健治、岩井洋、山田啓作, 他
- Organizer
  春期第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Siナノワイヤトランジスタの作製プロセスと電気特性の断面形状依存性2010
- Author(s)
  佐藤創志、新井英朗、角嶋邦之、大毛利健治、山田啓作、岩井洋, 他
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  静岡県三島市
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] 熱処理による電界印加HfSiON膜のダメージ回復における窒素添加効果2009
- Author(s)
  菊地裕樹、田村知大、林倫弘、大毛利健治、蓮沼隆、山部紀久夫
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] バイアス印加硬X線光電子分光法による界面電子状態の高感度観測2009
- Author(s)
  山下良之、大毛利健治、上田茂典、吉川英樹、知京豊裕、小林啓介
- Organizer
  物理学会第64回年次大会
- Place of Presentation
  立教学院池袋キャンパス
- Year and Date
  2009-03-27
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Hole注入によるしきい値電圧劣化の成分分離2009
- Author(s)
  田村知大、大毛利健治、蓮沼隆、山部紀久夫、他
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Fabrication of Gatearound Si Nanowire Transistors for Characterizing Carrier Transport2009
- Author(s)
  Kenji Ohmori, S. Sato, H. Kamimura, H. Iwai. K. Yamada, et.al.
- Organizer
  Mini-colloquium for Nano CMOS and Nanowire 2009
- Place of Presentation
  Tokyo Institute of Technology
- Year and Date
  2009-02-21
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] 金属/high-k絶縁膜構造トランジスタにおいて金属結晶が閾値電圧ばらつきに及ぼす影響とその抑制2009
- Author(s)
  大毛利健治、松木武雄、石川大、諸岡哲、網中敏夫、杉田義博、知京豊裕、白石賢二、奈良安雄、山田啓作
- Organizer
  DM研究会「IEDM特集(先端CMOSデバイス・プロセス)技術」
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位測定2009
- Author(s)
  佐藤創志、上村英之、角嶋邦之、大毛利健治、山田啓作、岩井洋、他
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] HfSiOxにおけるしきい値電圧経時劣化の成分分離2009
- Author(s)
  田村知大、林倫弘、菊地裕樹、大毛利健治、蓮沼隆、山部紀久夫
- Organizer
  ゲートスタック研究会
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Effect of carrier transport on threshold voltage variability in Si MOSFET2009
- Author(s)
  K.Ohmori, Y.Ohkura, K.Shiraishi, K.Yamada
- Organizer
  The 14th International Conference of Modulated Semiconductor Structures(MSS-14)
- Place of Presentation
  Kobe,Japan
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Fabrication of Si nanowira FETs and their Characteristics2009
- Author(s)
  K.Kakushima, S.Sato, K.Ohmori, H.Iwai, K.Yamada
- Organizer
  G-COE PRICE International Symposium on Silicon Nanodevices in 2030 : Prospects by World' s Leading Scientists
- Place of Presentation
  Tokyo Institute of Technology
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] 熱処理による電界印加HfSiON膜のダメ-ジ回復における窒素添加効果2009
- Author(s)
  菊地裕樹、田村知大、林倫弘、大毛利健治、蓮沼隆、山部紀久夫
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] 金属/high-k絶縁膜構造MOSFETの閾値電圧ばらつきと金属の結晶性制御によるその低減2009
- Author(s)
  大毛利健治、松木武雄、石川大、諸岡哲、網中敏夫、杉田義博、知京豊裕、白石賢二、奈良安雄、山田啓作
- Organizer
  ゲートスタック研究会
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration2009
- Author(s)
  S.Sato, K.Kaushima, K.Ohmori, K.Yamada, N.Iwai, et al.
- Organizer
  39th European Solid-State Device Research Conference(ESSDERC)
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] PDA温度がHfSiOxの電気的特性経時劣化へ与える影響2008
- Author(s)
  田村知大、林倫弘、大毛利健治、蓮沼隆、山部紀久夫
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] アモルファス金属材料のLSIへの応用2008
- Author(s)
  山田啓作、大毛利健治、知京豊裕
- Organizer
  早稲田大学ナノテクノロジーフォーラム・「金属ガラス」イノベーションフォーラム
- Place of Presentation
  早稲田大学
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] HfSiOxにおけるしきい値電圧経時劣化の成分分離2008
- Author(s)
  田村知大、林倫弘、菊地裕樹、大毛利健治、蓮沼隆、山部紀久夫
- Organizer
  ゲートスタック研究会
- Place of Presentation
  静岡県三島市
- Year and Date
  2008-01-23
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack2008
- Author(s)
  Kao-Shuo Chang, Martin Green, John Suehle, Jason Hattrick-Simpers, Ichiro Takeuchi, Kenji Ohmori, T. Chikyow, Stefan De Gendt, Prashant Majhi
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Relation between solubility of silicon in high-koxides and the effect of Fermi level pinning2008
- Author(s)
  N. Umezawa, K. Shiraishi, K. Kakushima, H. lwai, K. Ohmori, et.al.
- Organizer
  213th Meeting of the Electrochemical Society
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2008-05-18
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates2008
- Author(s)
  K. Ohmori, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, T. Chikyow, K. Shiraishi, Y. Nara, K. Yamada
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  San Francisco, USA,
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Influence of Hole Trapping on Threshold Voltage Shift in HfSiOx Films2008
- Author(s)
  Chihiro Tamura, Tomohiro Hayashi, Kenji Ohmori, Ryu Hasunuma, and Kikuo Yamabe
- Organizer
  International workshop on Dielectric Thin Films for Future ULSI Devices(IWDTF)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack2008
- Author(s)
  (Invited) Kao-Shuo Chang, Martin Green, John Suehle, Jason Hattrick-Simpers, Ichiro Takeuchi, Kenji Ohmori, T. Chikyow, Stefan De Gendt, Prashant Majhi
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-02-20
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究2008
- Author(s)
  佐藤創志、大毛利健治、角嶋邦之、山田啓作、岩井洋、他
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Influence of Hole Trapping on Threshold Voltage Shift in HfSiOx Films2008
- Author(s)
  C: Tamura, T. Hayashi, K. Ohmori, R. Hasunuma, K. Yamabe
- Organizer
  International workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] 金属/high-k絶縁膜構造トランジスタにおいて金属結晶が閾値電圧ばらつきに及ぼす影響とその抑制2008
- Author(s)
  大毛利健治、松木武雄、白石賢二、奈良安雄、山田啓作、他
- Organizer
  SDM研究会
- Place of Presentation
  東京
- Year and Date
  2008-01-26
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  (Invited) K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] 金属/high-k絶縁膜構造MOSFETの閾値電圧ばらつきと金属の結晶性制御によるその低減2008
- Author(s)
  大毛利健治、松木武雄、白石賢二、奈良安雄、山田啓作、他
- Organizer
  ゲートスタック研究会
- Place of Presentation
  静岡県三島市
- Year and Date
  2008-01-23
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Redu ction by Controlling Crystalline Structures and Grains in the Metal Gates2008
- Author(s)
  K. Ohmori, K. Shiraishi, Y. Nara, K. Yamada, et.al.
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  San Francisco. USA
- Year and Date
  2008-12-15
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning2008
- Author(s)
  N. Umezawa, K. Shiraishi, K. Kakushima, H. Iwai, K. Ohmori, K. Yamada, T. Chikyow
- Organizer
  213th Meeting of the Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] ハイスループット材料合成と電子デバイスへの応用2007
- Author(s)
  大毛利健治
- Organizer
  日本学術振興会第151委員会公開シンポジウム「ナノ・ハイスループット材料開発への挑戦」
- Place of Presentation
  化学会館ホール
- Year and Date
  2007-09-29
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes2007
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa,Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-12-11
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] C添加による金属ゲート材料の結晶構造制御とアモルファス化2007
- Author(s)
  大毛利健治、細井卓治、渡部平司、山田啓作、知京豊裕
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] ハイスループット材料合成と電子デバイスへの応用2007
- Author(s)
  大毛利健治
- Organizer
  日本学術振興会第151委員会公開シンポジウム「ナノ・ハイスループット材料開発への挑戦」
- Place of Presentation
  化学会館ホール
- Year and Date
  2007-09-29
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] ハイスループット材料合成と電子デバイスへの応用2007
- Author(s)
  大毛利健治
- Organizer
  日本学術振興会第151委員会公開シンポジウム「ナノ・ハイスループット材料開発への挑戦」
- Place of Presentation
  化学会館ホール
- Year and Date
  2007-09-29
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes2007
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-12-11
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] C添加による金属ゲート材料の結晶構造制御とアモルファス化2007
- Author(s)
  大毛利健治、細井卓治、渡部平司、山田啓作、知京豊裕
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] C添加による金属ゲート材料の結晶構造制御とアモルファス化2007
- Author(s)
  大毛利健治、細井卓治、渡部平司、山田啓作、知京豊裕
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Landscape of Combinatorial Materials Exploration and Materials Informatics2007
- Author(s)
  Chikyow Toyohiro, T. Nagata, N. Umezawa, M. Yoshitake, K. Ohmori, T. Yamada, M. Lippma and H. Koinuma
- Organizer
  2007 MRS Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2007-11-26
- Data Source
  KAKENHI-PROJECT-19760027
[Presentation] Landscape of Combinatorial Materials Exploration and Materials Informatics2007
- Author(s)
  Chikyow Toyohiro, T. Nagata, N. Umezawa, M. Yoshitake, K. Ohmori, T. Yamada, M. Lippma and H. Koinuma
- Organizer
  2007 MRS Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2007-11-26
- Data Source
  KAKENHI-PROJECT-19026014

1. 山田啓作 (30386734)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
2. 知京豊裕 (10354333)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results

OHMORI Kenji 大毛利 健治

Research Projects

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Co-Researchers

超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究Principal Investigator

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新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発Principal Investigator

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Nano-scale control of metal/high-k dielectric gate stack structuresPrincipal Investigator

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[Journal Article] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

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[Journal Article] Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electronbeaminduced cur rent technique2008

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[Journal Article] Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

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[Journal Article] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates2008

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[Journal Article] Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

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[Journal Article] Pliant epitaxial ionic oxides on silicon2008

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[Journal Article] Impact of Additional Factors in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structures and Grains in the Metal Gates2008

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[Journal Article] Pliant epitaxial ionic oxides on silicon2008

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[Patent] Siナノワイヤのシリサイドの形成方法2010

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[Patent] 金属電極及びこれを用いた半導体素子2008

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[Patent] 金属電極及びこれを用いた半導体素子2008

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[Patent] 金属電極及びこれを用いたCMOS回路2007

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[Presentation] Siナノワイヤトランジスタの電気特性の断面形状依存性2010

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OHMORI Kenji 大毛利健治