OKAMOTO Hiroshi 岡本浩

Researcher Number	00513342
Other IDs
Affiliation (based on the past Project Information) *help	2011 – 2021: 弘前大学, 理工学研究科, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials / Crystal engineering
Keywords	Principal Investigator ナノドット / 量子ドット / GeSn / Bi / Ge / 半導体ナノ構造 / サーファクタント / Sn / IV族半導体 / 低温形成 … More / Ⅳ族ナノドット / ビスマス / ゲルマニウム / Ⅳ族半導体 / DLTS法 / DLTS … More Except Principal Investigator 六方晶窒化ホウ素 / 分子線エピタキシー / GaN / MBE / BN / 半導体物性 / 結晶成長 / 半導体 / 金属基板 / ガラス基板 / 窒化ホウ素 / 窒化物半導体 / ＭＩＳ構造 / MIS構造 / ラジカル酸化 / 誘電体物性 / ゲルマニウム / 金属ジャーマネイト / 原子層堆積法 / プラズマ酸化 / MOS構造 / 超薄膜 / 表面・界面物性 / 誘電体薄膜 / 分子線エピタキシー装置 / 機械的転写 / GaN系薄膜 / 六方晶BN Less

将来の革新デバイスに向けたBi・Sn媒介GeSnナノドット形成技術の研究Principal Investigator
- Principal Investigator
  
  岡本浩
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hirosaki University
Growth of GaN-based devices on metal and glass substrates using layered BN
- Principal Investigator
  
  Kobayashi Yasuyuki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Hirosaki University
Semimetal (metal) mediated group-IV-semiconductor nanostructure formation and its application for next-generation fundamental device technologiesPrincipal Investigator
- Principal Investigator
  
  Okamoto Hiroshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University
Mechanical transfer of GaN-based devices using layered BN
- Principal Investigator
  
  Kobayashi Yasuyuki
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Hirosaki University
Study of low-temperature formation of group IV nanodots made by use of Bi surfactant and its device applicationPrincipal Investigator
- Principal Investigator
  
  Hiroshi Okamoto
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University
Research on high-k germanates and their direct formations on germanium substrates at low-temperature
- Principal Investigator
  
  Fukuda Yukio
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science, Suwa
Study of the property of low-defect-density quantum dots for the purpose of developing high efficiency optical devices.Principal Investigator
- Principal Investigator
  
  OKAMOTO Hiroshi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation Patent

[Journal Article] Low-temperature formation of GeSn nanodots by Sn mediation2019
- Author(s)
  Hiroshi Okamoto, Kensuke Takita, Kazuto Tsushima, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, and Hideki Gotoh
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 未定（Accepted for publication）
- NAID
  210000156276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06338
[Journal Article] Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation2019
- Author(s)
  Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, and Hiroshi Okamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 未定（Accepted for publication）
- NAID
  210000156275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06338
[Journal Article] Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth2016
- Author(s)
  Hiroshi Okamoto
- Journal Title
  
  Journal of Advances in Nanomaterials
  
  Volume: 1 Issue: 2 Pages: 82-94
- DOI
  10.22606/jan.2016.12005
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26420264
[Journal Article] Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition2016
- Author(s)
  Y. Fukuda, D. Yamada, T. Yokohira, K. Yanachi, C. Yamamoto, B. Yoo, J. Yamanaka, T. Sato, T. Takamatsu, and H. Okamoto
- Journal Title
  
  Journal of Vacuum Science & Technology A
  
  Volume: 34 Issue: 2
- DOI
  10.1116/1.4932039
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420281
[Journal Article] Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique2015
- Author(s)
  T. Iwasaki, T. Ono, Y. Otani, Y. Fukuda, and H. Okamoto
- Journal Title
  
  Electronics and Communications in Japan
  
  Volume: 98 Issue: 6 Pages: 8-15
- DOI
  10.1002/ecj.11655
- NAID
  210000188429
- Data Source
  KAKENHI-PROJECT-26420281
[Journal Article] Deep level transient spectroscopy characterization of In(Ga)As-quantum dots fabricated using Bi as a surfactant2014
- Author(s)
  H. Okamoto, S. Suzuki, H. Narita, T. Tawara, K. Tateno, and H. Gotoh
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol. 53 Issue: 6S Pages: 06JG11-06JG11
- DOI
  10.7567/jjap.53.06jg11
- NAID
  210000144119
- Data Source
  KAKENHI-PROJECT-23560354
[Journal Article] Deep level transient spectroscopy (DLTS) characterization of In(Ga)As-quantum dots fabricated using Bi as a surfactant2014
- Author(s)
  H. Okamoto, S. Suzuki, H. Narita, T. Tawara, K. Tateno, and H. Gotoh
- Journal Title
  
  Japanese Journal of applied physics
  
  Volume: 未定
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560354
[Journal Article] DLTS Evaluation of Near-Interface Traps in Ge-MIS Structures Fabricated by ECR-Plasma Techniques2013
- Author(s)
  岡本浩, 成田英史, 佐藤真哉, 岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems
  
  Volume: 133 Issue: 8 Pages: 1481-1484
- DOI
  10.1541/ieejeiss.133.1481
- NAID
  10031189039
- ISSN
  0385-4221, 1348-8155
- Language
  Japanese
- Data Source
  KAKENHI-PROJECT-23560354
[Journal Article] ECRプラズマ法によって作製したGe-MIS構造における界面近傍トラップのDLTS評価2013
- Author(s)
  岡本浩、成田英史、佐藤真哉、岩崎拓郎、小野俊郎、王谷洋平、福田幸夫
- Journal Title
  
  電気学会論文誌C
  
  Volume: Vol. 133
- NAID
  10031189039
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560354
[Journal Article] Distinctive Feature of Ripening During Growth Interruption of InGaAs Quantum Dot Epitaxy Using Bi as a Surfactant2011
- Author(s)
  H. Okamoto, T. Tawara, T. Tateno, H. Gotoh, H. Kamada, and T. Sogawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol. 50 Issue: 6S Pages: 06GH07-06GH07
- DOI
  10.1143/jjap.50.06gh07
- NAID
  210000070725
- Data Source
  KAKENHI-PROJECT-23560354
[Patent] ナノ構造の製造方法2014
- Inventor(s)
  俵毅彦、舘野功太、章国強、後藤秀樹、岡本浩
- Industrial Property Rights Holder
  俵毅彦、舘野功太、章国強、後藤秀樹、岡本浩
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-123112
- Filing Date
  2014-06-16
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Plasma-assisted MBE Grown h-BN Thin Films on Glass Substrates2022
- Author(s)
  N. Hatakeyama, T. Azuhata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura, and Y. Kobayashi
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] MBEによるガラス基板上h-BN薄膜の膜厚評価2021
- Author(s)
  畠山直樹、小豆畑敬、中澤日出樹、岡本浩、廣木正伸、熊倉一英、小林康之
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] 真空蒸着法によるMOSキャパシタの作製2020
- Author(s)
  前田猛，岡本浩
- Organizer
  応用物理学会東北支部第75 回学術講演会
- Data Source
  KAKENHI-PROJECT-20K04557
[Presentation] MBEによるAlN/h-BNバッファ層上GaN薄膜のエピタキシャル成長2020
- Author(s)
  原田文矢、中澤日出樹、岡本　浩、廣木正伸、熊倉一英、小林康之
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] Plasma-assisted Molecular Beam Epitaxy Growth of GaN Thin Films on Sapphire Substrates Using h-BN/AlN Buffer Layers2019
- Author(s)
  Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] MBEによるガラス基板上BN薄膜成長2019
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] ガラス基板上MBE成長BN薄膜のラマン散乱2019
- Author(s)
  小林康之、小豆畑敬、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] Bi-mediated formation of Ge nanodots fabricated by vacuum evaporation2018
- Author(s)
  Kazuto Tsushima, Kensuke Takita, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, and Hiroshi Okamoto
- Organizer
  電気関係学会東北支部連合大会Student Session
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 真空蒸着法によるBi媒介Geナノドットの形成機構の検討2018
- Author(s)
  対馬和都，滝田健介，中澤日出樹，俵毅彦，舘野功太，章国強，後藤秀樹，池田高之，水野誠一郎，岡本浩
- Organizer
  電子情報通信学会技術研究報告(CPM2018-12)
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 真空蒸着と低温アニールによるSn媒介GeSnナノドット形成2018
- Author(s)
  対馬和都，滝田健介，俵毅彦，舘野功太，章国強，後藤秀樹，岡本浩
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] h-BN/AlNバッファ層を用いたサファイア基板上GaN薄膜のMBE成長2018
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] Low-Temperature Formation of GeSn Nanodots by Tin Mediation2018
- Author(s)
  Hiroshi Okamoto, Kensuke Takita, Kazuto Tsushima, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, and Hideki Gotoh
- Organizer
  31st International Microprocesses and Nanotechnology Conference (MNC2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] Study on the Formation Mechanism of Bismuth-Mediated Ge Nanodots Fabricated by Vacuum Evaporation2018
- Author(s)
  Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, and Hiroshi Okamoto
- Organizer
  31st International Microprocesses and Nanotechnology Conference (MNC2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] MBEによるh-BNバッファ層を用いた(0001)サファイア基板上GaN成長2018
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy2018
- Author(s)
  Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] p-Ge基板上にALD堆積したAl2O3への酸素ラジカル照射の及ぼす影響2017
- Author(s)
  王谷洋平、山田大地、白倉麻依、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  平成29年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 真空蒸着と低温アニールによるBi媒介Geナノドット形成-１2017
- Author(s)
  滝田健介、対馬和都、遠田義晴、俵毅彦、舘野功太、章国強、後藤秀樹、池田高之、水野誠一郎、岡本浩
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜市パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] 原子層堆積法によりGe基板上に形成したAl2O3への酸素ラジカル照射がAl2O3/p-Ge界面特性に及ぼす影響2017
- Author(s)
  山田大地、王谷洋平、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] Alジャーマネイト絶縁層を有するn型基板Ge-MIS構造の電気的特性評価2017
- Author(s)
  上西理加, 山田大地, 王谷洋平, 福田幸夫, 岡本浩
- Organizer
  応用物理学会東北支部第72回学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy2017
- Author(s)
  Y. Kobayashi, T. Kimura, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] 真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価2017
- Author(s)
  滝田健介，対馬和都, 遠田義晴, 俵毅彦，舘野功太，章国強，後藤秀樹，岡本浩
- Organizer
  平成29年度電気関係学会東北支部連合大会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 真空蒸着と低温アニールによるBi媒介Geナノドット形成-32017
- Author(s)
  対馬和都、滝田健介、俵毅彦、舘野功太、章国強、後藤秀樹、池田高之、水野誠一郎、岡本浩
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 真空蒸着と低温アニールによるBi媒介Geナノドット形成-22017
- Author(s)
  対馬和都、滝田健介、中澤日出樹、遠田義晴、俵毅彦、舘野功太、章国強、後藤秀樹、岡本浩
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜市パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] RE-ALD形成Al2O3/GeO2/p-Ge MOSキャパシタの電気的特性に及ぼすゲート電極金属の影響 -２2017
- Author(s)
  長浜優、山田大地、王谷洋平、福田幸夫、岡本浩
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] MBEによる(0001)サファイア基板上BN薄膜成長2017
- Author(s)
  小林康之、木村拓磨、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] Formation of Al and Hf Germanates as Interlayers between High-κ Dielectrics and Ge Substrates by Radical-Enhanced Atomic Layer Deposition2017
- Author(s)
  D. Yamada, Y. Otani, C. Yamamoto, J. Yamanaka, T. Sato, H. Okamoto, Y. Fukuda
- Organizer
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] Biを媒介したIn(Ga)As並びにGeナノドットの自己形成2017
- Author(s)
  岡本浩、俵毅彦、舘野功太、章国強、後藤秀樹
- Organizer
  電子情報通信学会技術研究報告（電子情報通信学会研究会）
- Invited
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] Effects of gate-electrode metals and postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition2016
- Author(s)
  Yukio Fukuda, Daichi Yamada, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Hiroshi Okamoto
- Organizer
  ALD 2016 Ireland
- Place of Presentation
  Dublin Convention Center, Dublin
- Year and Date
  2016-07-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] ラジカル援用原子層堆積法で形成したAl2O3/GeO2/p-Ge基板上のゲート電極金属が電気的特性に及ぼす影響2016
- Author(s)
  山田大地、王谷洋平、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  応用物理学会北陸・信越支部第3回有機・無機エレクトロニクスシンポジウム
- Place of Presentation
  石川県政記念しいのき迎賓館
- Year and Date
  2016-07-15
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Self-organized nanostructure formation of III-V and grope IV semiconductors by using bismuth2016
- Author(s)
  Hiroshi Okamoto
- Organizer
  Collaborative Conference on 3D and Materials Research (CC3DMR)
- Place of Presentation
  Incheon/Seoul, Korea
- Year and Date
  2016-06-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition2016
- Author(s)
  Hiroshi Okamoto, Daichi Yamada, Hidefumi Narita, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, and Yukio Fukuda
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Year and Date
  2016-01-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Effects of electrode metal and thermal treatment on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition2016
- Author(s)
  Yukio Fukuda, Daichi Yamada, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Hiroshi Okamoto
- Organizer
  16th International Conference on Atomic Layer Deposition (ALD 2016)
- Place of Presentation
  Dublin, Ireland
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Radical-enhanced ALD法によるGe-MIS構造の欠陥評価価(2);熱処理効果2016
- Author(s)
  成田英史、山田大地、福田幸夫、岡本浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] REALD形成Al2O3/GeO2/p-Ge MOSキャパシターの電気的特性に及ぼすゲート電極金属の影響2016
- Author(s)
  山田大地, 王谷洋平,　山本千綾，山中淳二，佐藤哲也, 岡本浩，福田幸夫
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical enhanced atomic layer deposition2016
- Author(s)
  H. Okamoto, D. Yamada, H. Narita, Y. Otani, C. Yamamoto, J. Yamanaka, T. Sato, and Y. Fukuda
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] REALD形成Al2O3/GeO2/p-GeMOSキャパシターの電気的特性に及ぼすゲート電極金属の影響2016
- Author(s)
  山田大地、王谷洋平、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Radical-enhanced ALD法によるGe-MIS構造の欠陥評価(2)2016
- Author(s)
  成田英史、山田大地、福田幸夫、岡本浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Role of low-energy ion irradiation in the formation of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition2015
- Author(s)
  T. Yokohira, K. Yanachi, D. Yamada, C. Yamamoto, B. Yoo, J. Yamanaka, T. Sato, T. Takamatsu, H. Okamoto, and Y. Fukuda
- Organizer
  The 13th International Symposium on Sputtering and Plasma Process
- Place of Presentation
  Kyoto　Research Park
- Year and Date
  2015-07-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Formation mechanism of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition2015
- Author(s)
  Hiroshi Okamoto, Tomoya Yokohira, Kosei Yanachi, Chiaya Yamamoto, Byeonghaku Yoo, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Hidefumi Narita, and Yukio Fukuda
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Year and Date
  2015-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Radical-enhanced ALD法によるGe-MIS構造の欠陥評価2015
- Author(s)
  成田英史、山田大地、福田幸夫、鹿糠洋介、岡本浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Radical-enhanced ALD法によって形成したAlジャーマネイト/Ge界面とその近傍の欠陥評価2015
- Author(s)
  成田英史、山田大地、福田幸夫、鹿糠洋介、岡本浩
- Organizer
  電子通信情報学会電子部品・材料研究会(CPM)
- Place of Presentation
  弘前大学
- Year and Date
  2015-08-10
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Bi プレディポジションによる Ge ナノドットの石英基板上への低温形成2015
- Author(s)
  鈴木良優, 滝田健介, 俵毅彦, 舘野功太, 章国強, 後藤秀樹, 岡本浩
- Organizer
  応用物理学会東北支部第７０回学術講演会
- Place of Presentation
  ホテルアップルランド(青森県平川市)
- Year and Date
  2015-12-03
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Radical-Enhanced ALD法によって形成したAlジャーマネイト/Ge界面とその近傍の欠陥評価2015
- Author(s)
  成田英史、山田大地、福田幸夫、鹿糠洋介、岡本浩
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  弘前大学(弘前市)
- Year and Date
  2015-08-10
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Radical-enhanced ALD法によるGe-MIS構造の欠陥評価2015
- Author(s)
  成田英史、山田大地、福田幸夫、鹿糠洋介、岡本浩
- Organizer
  第76 回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26420264
[Presentation] Biサーファクタントを用いたGeナノドットの低温形成2014
- Author(s)
  岡本浩、林一稀、小林弓華、俵毅彦、舘野功太、章国強、後藤秀樹
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] ALD法によるAlジャーマネイト絶縁層を用いたGe-MIS構造における界面近傍トラップのDLTS評価2014
- Author(s)
  成田英史, 福田幸夫, 王谷洋平, 梁池昂生, 花田毅広, 石崎博基, 岡本浩
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学(19p-PG2-6)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] Biサーファクタントを用いたGeナノドットの低温形成2014
- Author(s)
  岡本浩, 林一稀, 小林弓華, 俵毅彦, 舘野功太, 章国強, 後藤秀樹
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学(18p-F6-7)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] ALD法によるAlジャーマネイト絶縁層を用いたGe-MIS構造における界面近傍トラップのDLTS評価2014
- Author(s)
  成田英史，福田幸夫，王谷洋平，梁池昂生, 花田毅広, 石崎博基，岡本浩
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS Characterization of In(Ga)As-quantum DotsFabricated using Bi as a Surfactant2013
- Author(s)
  H. Okamoto, S. Suzuki, H. Narita, T. Tawara, K. Tateno, and H.Gotoh
- Organizer
  26th Int. Microprocesses and Nanotechnology Conf. (MNC 2013)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS法によるECRプラズマ法GeNx/Geの界面近傍トラップに対する熱処理効果の評価II2013
- Author(s)
  成田英史，岩崎拓郎，福田幸夫，王谷洋平，小野俊郎，岡本浩
- Organizer
  第74 回応用物理学会学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] Biサーファクタントを用いたIn(Ga)As量子ドットのDLTS評価2013
- Author(s)
  鈴木聡一郎, 岡本浩, 舘野功太, 俵毅彦, 後藤秀樹, 寒川哲臣
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(29a-PB7-4)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS Characterization of In(Ga)As-quantum DotsFabricated using Bi as a Surfactant2013
- Author(s)
  H. Okamoto, S. Suzuki, H. Narita, T. Tawara, K. Tateno, and H.Gotoh
- Organizer
  26th Int. Microprocesses and Nanotechnology Conf. (MNC 2013)
- Place of Presentation
  Sapporo, Japan(8D-9-2)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS法によるECRプラズマ法GeNx/Geの界面近傍トラップに対する熱処理効果の評価II2013
- Author(s)
  成田英史, 岩崎拓郎, 福田幸夫, 王谷洋平, 小野俊郎, 岡本浩
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(18p-P9-6)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS法によるECRプラズマ法GeNx/Geの界面近傍トラップに対する熱処理効果の評価2012
- Author(s)
  成田英史, 佐藤真哉, 岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫,岡本浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学(11a-PB1-6)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] ECRプラズマ法によって作製したGe-MIS構造における界面近傍トラップのDLTS評価2012
- Author(s)
  岡本浩, 成田英史, 佐藤真哉, 岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫
- Organizer
  平成24年電気学会電子・情報・システム部門大会
- Place of Presentation
  弘前大学(講演論文集、MC6-8, pp,1276-1279)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] In(Ga)As積層量子ドット構造のDLTS評価2011
- Author(s)
  鈴木聡一郎，佐藤真哉，岩崎拓郎，俵毅彦，舘野功太，後藤秀樹，寒川哲臣，岡本　浩
- Organizer
  平成23年度電気関係学会東北支部連合大会
- Place of Presentation
  東北学院大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] In(Ga)As積層量子ドット構造におけるキャリア注入／放出特性のDLTS評価2011
- Author(s)
  鈴木聡一郎、佐藤真哉、岩崎拓郎、俵毅彦、舘野功太、後藤秀樹、寒川哲臣、岡本浩
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  弘前大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] In(Ga)As積層量子ドット構造におけるキャリア注入/放出特性のDLTS評価2011
- Author(s)
  鈴木聡一郎, 佐藤真哉, 岩崎拓郎, 俵毅彦, 舘野功太, 後藤秀樹, 寒川哲臣, 岡本浩
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  弘前大学(vol.111, no.176, CPM2011-57, pp. 7-10)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] In(Ga)As積層量子ドット構造のDLTS評価2011
- Author(s)
  鈴木聡一郎, 佐藤真哉, 岩崎拓郎, 俵毅彦, 舘野功太, 後藤秀樹,寒川哲臣,岡本浩
- Organizer
  平成23年度電気関係学会東北支部連合大会
- Place of Presentation
  東北学院大学(講演論文集2F19,p. 230)
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] Biｻｰﾌｧｸﾀﾝﾄを用いたIn(Ga)As量子ﾄﾞｯﾄのDLTS評価
- Author(s)
  鈴木聡一郎，岡本浩，舘野功太，俵毅彦，後藤秀樹，寒川哲臣
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] DLTS 法によるECR プラズマ法GeNx/Ge の界面近傍トラップに対する熱処理効果の評価
- Author(s)
  成田英史，佐藤真哉，岩崎拓郎，小野俊郎，王谷洋平，福田幸夫，岡本浩
- Organizer
  第73 回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] ECRプラズマ法によって作製したGe-MIS構造における界面近傍トラップのDLTS評価
- Author(s)
  岡本浩, 成田英史, 佐藤真哉, 岩崎拓郎, 小野俊郎, 王谷洋平, 福田幸夫
- Organizer
  平成２４年電気学会電子・情報・システム部門大会
- Place of Presentation
  弘前大学
- Data Source
  KAKENHI-PROJECT-23560354
[Presentation] Radical-Enhanced ALD法によるGe基板上Alジャーマネイトの形成機構に関する検討
- Author(s)
  横平知也、梁池昂生、柳炳學、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Formation mechanism of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition
- Author(s)
  H. Okamoto, T. Yokohira, K. Yanachi, C. Yamamoto, B. Yoo, J. Yamanaka, T. Takamatsu, H. Narita, and Y. Fukuda
- Organizer
  The 8th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-26420281

1. TAWARA Takehiko (40393798)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
2. Kobayashi Yasuyuki (90393727)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
3. 中澤日出樹 (90344613)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
4. 遠田義晴 (20232986)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
5. TATENO Kouta (20393796)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. ZANG Guoqiang (90402247)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
7. Fukuda Yukio (50367546)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
8. 王谷洋平 (40434485)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
9. 佐藤哲也 (60252011)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
10. 伊高健治 (40422399)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 小豆畑敬 (20277867)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
12. KUMAKURA KAZUHIDE

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
13. HIROKI MASANOBU

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
14. SUZUKI Yoshihiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
15. TAKITA Kensuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
16. TUSHIMA Kazuto

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

OKAMOTO Hiroshi 岡本 浩

Research Projects

Research Products

Co-Researchers

将来の革新デバイスに向けたBi・Sn媒介GeSnナノドット形成技術の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of GaN-based devices on metal and glass substrates using layered BN

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Semimetal (metal) mediated group-IV-semiconductor nanostructure formation and its application for next-generation fundamental device technologiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Mechanical transfer of GaN-based devices using layered BN

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of low-temperature formation of group IV nanodots made by use of Bi surfactant and its device applicationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on high-k germanates and their direct formations on germanium substrates at low-temperature

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of the property of low-defect-density quantum dots for the purpose of developing high efficiency optical devices.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Low-temperature formation of GeSn nanodots by Sn mediation2019

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Study on the formation mechanism of bismuth-mediated Ge nanodots fabricated by vacuum evaporation2019

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Deep level transient spectroscopy characterization of In(Ga)As-quantum dots fabricated using Bi as a surfactant2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Deep level transient spectroscopy (DLTS) characterization of In(Ga)As-quantum dots fabricated using Bi as a surfactant2014

Author(s)

OKAMOTO Hiroshi 岡本浩