Tsunoda Isao 角田功

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TSUNODA Isao 角田功

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Researcher Number	00585200
Other IDs
Affiliation (Current)	2025: 熊本高等専門学校, 電子情報システム工学系TEグループ, 准教授
Affiliation (based on the past Project Information) *help	2019: 熊本高等専門学校, 拠点化プロジェクト系先端研究コアグループ, 准教授 2017 – 2018: 熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授 2015: 熊本高等専門学校, その他部局等, 准教授 2014 – 2015: 熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Crystal engineering
Keywords	Principal Investigator ゲルマニウム / 低温結晶成長 / 結晶成長 / 電子・電気材料 / 非熱エネルギー / シリコンゲルマニウム / 半導体

Research Projects
(2 results)
Research Products
(36 results)

Low temperature formation of orientation controlled crystalline group IV semiconductor on insulating substrate by using metal induced crystallization methodPrincipal Investigator
- Principal Investigator
  
  TSUNODA Isao
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Technology, Kumamoto College
Development of low temperature formation for group IV crystalline semiconductor film on insulating substrate by catalytic crystallization methodPrincipal Investigator
- Principal Investigator
  
  TSUNODA Isao
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institute of Technology, Kumamoto College

All 2020 2019 2018 2017 2016 2015 2014 Other

All Journal Article Presentation Patent

[Journal Article] Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 oC2020
- Author(s)
  Taiki Nishijima, Satoshi Shimizu, Kinta Kusano, Kazuki Kudo, Masahiro Furuta, Yutaka Kusuda, Shinichi Motoyama, Nobuyuki Naka, Tomoko Numata, Kenichiro Takakura, and Isao Tsunoda
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 5 Pages: 055306-055306
- DOI
  10.1063/5.0004326
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06363
[Journal Article] Au induced low-temperature formation of perferentially (111)-oriented crystalline Ge on insulator2016
- Author(s)
  岡本　隼人，工藤　康平，野満　建至，高倉　健一郎，角田　功
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EJ10-04EJ10
- DOI
  10.7567/jjap.55.04ej10
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870815
[Journal Article] Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO22016
- Author(s)
  茂藤　健太，崎山　晋，岡本　隼人，原　英之，西村　浩人，高倉　健一郎，角田　功
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EJ06-04EJ06
- DOI
  10.7567/jjap.55.04ej06
- NAID
  210000146369
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870815
[Journal Article] 非晶質Ge薄膜のAu誘起成長に及ぼすTEOS-SiO2キャップ層の影響2015
- Author(s)
  工藤　和樹，草野　欽太，酒井　崇嗣，本山　慎一，楠田　豊，古田　真浩，中　庸行，沼田　朋子，高倉　健一郎，角田　功
- Journal Title
  
  信学技報
  
  Volume: 115 Pages: 41-44
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870815
[Journal Article] 面方位制御した結晶Ge薄膜の極低温誘起成長2015
- Author(s)
  野満　建至，岡本　隼人，工藤　康平，坂口　大成，高倉　健一郎，角田　功
- Journal Title
  
  信学技報
  
  Volume: 115 Pages: 45-48
- Data Source
  KAKENHI-PROJECT-26870815
[Patent] ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板2014
- Inventor(s)
  角田功、高倉健一郎、本山慎一、楠田豊、古田真浩
- Industrial Property Rights Holder
  （独）国立高等専門学校機構、ｻﾑｺ（株）
- Industrial Property Rights Type
  特許
- Filing Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 触媒結晶性変調法を用いた高品質Ge (111)の低温形成2019
- Author(s)
  角和章，清水昇，角田功
- Organizer
  2019年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Sn誘起横方向成長により低温形成した結晶GeSn/SiO2の評価2019
- Author(s)
  小川大輔，高倉健一郎，角田功
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Low Temperature (< 130℃) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC2019
- Author(s)
  Taiki Nishijima, Kinta Kusano, Kazuki Kudo, Masahiro Furuta, Yutaka Kusuda, Shinichi Motoyama, Nobuyuki Naka, Tomoko Numata and Isao Tsunoda
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Sn誘起成長法を用いた結晶Ge1-xSnx(x≧15%)の低温形成2019
- Author(s)
  小川大輔，高倉健一郎，角田功
- Organizer
  2019年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 電子線照射した非晶質Ge/SiO2のAu誘起横方向成長過程の評価2019
- Author(s)
  清水智，高倉健一郎，角田功
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Au結晶性を変調した非晶質Ge/Au/SiO2積層構造の低温固相成長2019
- Author(s)
  角和章，清水昇，角田功
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 非晶質Ge/SiO2のSn誘起横方向低温（≦200℃）固相成長2018
- Author(s)
  鹿子木嘉城、佐藤亮起、西嶋泰樹、小川大輔、高倉健一郎、角田功
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Au誘起横方向成長した結晶Ge内のAu濃度評価2018
- Author(s)
  濵崎健、坂井拓也、高倉健一郎、角田功
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Electron irradiation effect on Sn induced lateral crystallization for amorphous Ge on insulating substrate2018
- Author(s)
  鹿子木嘉城、西嶋泰樹、高倉健一郎、角田功
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Low temperature formation of Ge(111)/Au/SiO2 by two step annealing2018
- Author(s)
  清水昇、森貴礼、高倉健一郎、角田功
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Au誘起横方向成長により形成した低温結晶化Ge薄膜の結晶性評価2018
- Author(s)
  西嶋泰樹、濱崎健、草野欽太、高倉健一郎、角田功
- Organizer
  平成30年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 2段階熱処理による結晶Ge/Au/SiO2積層構造の低温形成2018
- Author(s)
  清水昇、森貴礼、岡本健人、坂井拓也、高倉健一郎、角田功
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Evaluation of Au concentration for Au induced lateral crystallized Ge on insulating substrate2018
- Author(s)
  濵崎健、坂井拓也、高倉健一郎、角田功
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Influence of Au film thickness on Au induced lateral crystallization for amorphous Ge on insulating substrate2017
- Author(s)
  坂井拓也、草野欽太、佐藤亮起、高倉健一郎、角田功
- Organizer
  36th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 非晶質Ge薄膜のAu誘起成長に及ぼすAu結晶性の影響2017
- Author(s)
  森貴礼、岡本健人、清水昇、坂井拓也、高倉健一郎、角田功
- Organizer
  平成２９年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] Catalyst dependence of metal induced lateral crystallization (MILC) for amorphous Ge on insulator2017
- Author(s)
  佐藤亮起、坂井拓也、高倉健一郎、角田功
- Organizer
  36th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 絶縁基板上における非晶質Ge薄膜のSn誘起横方向成長2017
- Author(s)
  佐藤亮起、城土卓巳、井芹健人、坂井拓也、高倉健一郎、角田功
- Organizer
  平成２９年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-17K06363
[Presentation] 非晶質SixGe1-x/SiO2のAu誘起成長に及ぼす圧縮応力の影響2016
- Author(s)
  草野　欽太，工藤　和樹，坂井　拓也，本山　慎一，楠田　豊，古田　真浩，中　庸行，沼田　朋子，高倉　健一郎，角田　功
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] Preferentially (111) Oriented Crystalline Ge by Low Temperature (~200 ℃) Au Induced Solid Phase Crystallization2016
- Author(s)
  工藤　康平，餅井　亮介，野満　建至，高倉　健一郎，角田　功
- Organizer
  8th International SiGe Technology and Device Meeting 2016
- Place of Presentation
  名古屋大学
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] Stress stimulation effect on Au induced lateral crystallization for amorphous Ge on insulating substrate2016
- Author(s)
  工藤　和樹，草野　欽太，坂口　大成，酒井　崇嗣，本山　慎一，楠田　豊，古田　真浩，中　庸行，沼田　朋子，高倉　健一郎，角田　功
- Organizer
  8th International SiGe Technology and Device Meeting 2016
- Place of Presentation
  名古屋大学
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 非晶質Ge薄膜のAu誘起成長に及ぼす熱処理温度の影響（２）－Au膜厚依存性－2015
- Author(s)
  工藤　康平，野満　建至，餅井　亮介，岡本　隼人，高倉　健一郎，角田　功
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 面方位制御した結晶Ge薄膜の極低温誘起成長2015
- Author(s)
  野満　建至，岡本　隼人，工藤　康平，坂口　大成，高倉　健一郎，角田　功
- Organizer
  電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨｼﾘｺﾝ材料・ﾃﾞﾊﾞｲｽ（SDM）研究会
- Place of Presentation
  大濱信泉記念館（沖縄県）
- Year and Date
  2015-04-29
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 非晶質Ge薄膜のAu誘起成長に及ぼすTEOS-SiO2キャップ層の影響2015
- Author(s)
  工藤　和樹，草野　欽太，酒井　崇嗣，本山　慎一，楠田　豊，古田　真浩，中　庸行，沼田　朋子，高倉　健一郎，角田　功
- Organizer
  電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨｼﾘｺﾝ材料・ﾃﾞﾊﾞｲｽ（SDM）研究会
- Place of Presentation
  大濱信泉記念館（沖縄県）
- Year and Date
  2015-04-29
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] Au induced low-temperature formation of perferentially (111)-oriented crystalline Ge on insulator2015
- Author(s)
  岡本　隼人，工藤　康平，野満　建至，高倉　健一郎，角田　功
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO22015
- Author(s)
  茂藤　健太，崎山　晋，岡本　隼人，原　英之，西村　浩人，高倉　健一郎，角田　功
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] TEOS内部応力を利用した非晶質Ge薄膜のAu誘起成長
- Author(s)
  酒井崇嗣, 草野欽太, 岡本隼人, 本山慎一, 楠田豊, 古田真浩, 中　庸行, 沼田朋子, 高倉健一郎, 角田　功
- Organizer
  平成26年度応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 非晶質 Ge/SiO2の Au 誘起横方向成長に及ぼす応力印加効果
- Author(s)
  酒井崇嗣、中嶋一敬、茂藤健太、本山慎一、楠田豊、古田真浩、中庸行、沼田朋子、高倉健一郎、角田功
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 絶縁膜上における非晶質Ge薄膜の【電子線＋金属触媒】誘起成長
- Author(s)
  茂藤健太, 岡本隼人, 崎山晋, 原英之, 西村浩人, 高倉健一郎, 角田功
- Organizer
  平成26年度応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 非晶質Ge薄膜のAu誘起低温成長による面方位制御
- Author(s)
  岡本隼人, 工藤康平, 高倉健一郎, 角田功
- Organizer
  平成26年度応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06 – 2014-12-07
- Data Source
  KAKENHI-PROJECT-26870815
[Presentation] 非晶質 Ge/SiO2の Au 誘起横方向成長に及ぼす電子線照射効果
- Author(s)
  茂藤健太、崎山晋、岡本隼人、酒井崇嗣、中嶋一敬、原英之、西村浩人、高倉健一郎、角田功
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26870815

Tsunoda Isao 角田 功

TSUNODA Isao 角田 功

Research Projects

Research Products

Low temperature formation of orientation controlled crystalline group IV semiconductor on insulating substrate by using metal induced crystallization methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of low temperature formation for group IV crystalline semiconductor film on insulating substrate by catalytic crystallization methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 oC2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Au induced low-temperature formation of perferentially (111)-oriented crystalline Ge on insulator2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO22016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] 非晶質Ge薄膜のAu誘起成長に及ぼすTEOS-SiO2キャップ層の影響2015

Author(s)

Journal Title

Data Source

[Journal Article] 面方位制御した結晶Ge薄膜の極低温誘起成長2015

Author(s)

Journal Title

Data Source

[Patent] ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板2014

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Presentation] 触媒結晶性変調法を用いた高品質Ge (111)の低温形成2019

Author(s)

Organizer

Data Source

[Presentation] Sn誘起横方向成長により低温形成した結晶GeSn/SiO2の評価2019

Author(s)

Organizer

Data Source

[Presentation] Low Temperature (< 130℃) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC2019

Author(s)

Organizer

Data Source

[Presentation] Sn誘起成長法を用いた結晶Ge1-xSnx(x≧15%)の低温形成2019

Author(s)

Organizer

Data Source

[Presentation] 電子線照射した非晶質Ge/SiO2のAu誘起横方向成長過程の評価2019

Author(s)

Organizer

Data Source

[Presentation] Au結晶性を変調した非晶質Ge/Au/SiO2積層構造の低温固相成長2019

Author(s)

Organizer

Data Source

[Presentation] 非晶質Ge/SiO2のSn誘起横方向低温（≦200℃）固相成長2018

Author(s)

Organizer

Data Source

[Presentation] Au誘起横方向成長した結晶Ge内のAu濃度評価2018

Author(s)

Organizer

Data Source

[Presentation] Electron irradiation effect on Sn induced lateral crystallization for amorphous Ge on insulating substrate2018

Author(s)

Tsunoda Isao 角田功

TSUNODA Isao 角田功