KOSEMURA Daisuke 小瀬村大亮

… Alternative Names

小瀬村大亮コセムラダイスケ

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Researcher Number	00608284
Affiliation (Current)	2025: 明治大学, 研究・知財戦略機構, 研究推進員(客員研究員)
Affiliation (based on the past Project Information) *help	2014 – 2016: 明治大学, 公私立大学の部局等, 研究員 2014: 明治大学, 研究・知財戦略機構, 研究員 2013 – 2014: 明治大学, 研究・知財戦略機構, 客員研究員 2011 – 2013: 明治大学, 理工学部, 助教
Review Section/Research Field	Principal Investigator Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator フォノン変形ポテンシャル / 異方性応力 / パワーデバイス / 化合物半導体 / カソードルミネッセンス / ウルツ鉱構造 / フォノン / 表面増強ラマン分光法 / 液浸ラマン分光法 / 非極性面 … More / GaN / III-V化合物半導体 / ラマン散乱 / 応力 / シリコン / 光物性 / 半導体物性 / 結晶工学 / 偏光ラマン / SiGe / 歪Si / 近接場 / 原子間力顕微鏡 / ラマン分光法 / polarized-Raman / stress / strain / Si, SiGe / AFM Raman / tip-enhanced Raman … More Except Principal Investigator フォノン変形ポテンシャル / 異方性歪 / 有限要素法 / 歪 / 応力 / 電気・電子材料 / 国際情報交換 / 有限差分時間領域法（FDTD） / 有限要素法（FEM / 表面増強ラマン分光法 / 電子・電気材料 / 第一原理計算（ab initio） / 有限要素法（FEM） / フォノン変形ポテンシャル（PDPs） / 液浸ラマン分光法 / 応力・歪 / SiGe Less

Examination of anisotropic stress state evaluation in III-V compound semiconductors by oil-immersion Raman spectroscopyPrincipal Investigator
- Principal Investigator
  
  KOSEMURA Daisuke
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Meiji University
Multi-axial analysis of strain states introduced in nano area on Ge and SiGe super-thin films by Raman spectroscopy
- Principal Investigator
  
  OGURA ATSUSHI
- Project Period (FY)
  2012 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meiji University
Study of High-Spatial Resolution Strain Measurements in Semiconductor Devices Using Tip-Enhanced Raman SpectroscopyPrincipal Investigator
- Principal Investigator
  
  KOSEMURA Daisuke
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meiji University

All 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation Book

[Book] Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectrosopy2012
- Author(s)
  D. Kosemura, M. Tomita, K. Usuda, and A. Ogura
- Publisher
  InTech, Croatia
- Data Source
  KAKENHI-PROJECT-24360125
[Book] Advanced Aspects of Spectroscopy2012
- Author(s)
  D. Kosemura
- Total Pages
  32
- Publisher
  InTech, Croatia
- Data Source
  KAKENHI-PROJECT-23860051
[Journal Article] Examination of phonon deformation potentials for accurate strain measurements in silicon-germanium alloys with the whole composition range by Raman spectroscopy2016
- Author(s)
  D. Kosemura, S. Yamamoto, K. Takeuchi, K. Usuda, and A. Ogura
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 2 Pages: 026602-026602
- DOI
  10.7567/jjap.55.026602
- NAID
  210000146043
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Origin of additional broad peaks in Raman spectra　from thin germanium-rich silicon-germanium films2016
- Author(s)
  Kazuma Takeuchi、Daisuke Kosemura, Ryo Yokogawa, Koji Usuda, and Atsushi Ogura
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 7 Pages: 071301-071301
- DOI
  10.7567/apex.9.071301
- NAID
  210000137963
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 substrates2015
- Author(s)
  R. Imai, D. Kosemura, and A. Ogura
- Journal Title
  
  ECS Transactions
  
  Volume: TBD
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790049
[Journal Article] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transaction
  
  Volume: 66 Issue: 4 Pages: 39-45
- DOI
  10.1149/06604.0039ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Evaluation of Anisotropic Biaxial stress in Si1-xGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transactions
  
  Volume: TBD
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25790049
[Journal Article] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015
- Author(s)
  K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, and A. Ogura
- Journal Title
  
  ECS Transaction
  
  Volume: 69 Issue: 10 Pages: 81-87
- DOI
  10.1149/06910.0081ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy2014
- Author(s)
  A. Ogura and D. Kosemura
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 67-77
- DOI
  10.1149/06406.0067ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] Electrical field analysis of　metal-surface plasmon resonance using a biaxially strained Si substrate2014
- Author(s)
  Daisuke Kosemura,Siti Norhidayah binti CheMohd Yusoff and Atsushi Ogura
- Journal Title
  
  J. Raman Spectrosc.
  
  Volume: 45 Issue: 6 Pages: 414-417
- DOI
  10.1002/jrs.4478
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014
- Author(s)
  S. Yamamoto, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 841-847
- DOI
  10.1149/06406.0841ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-24360125, KAKENHI-PROJECT-25790049
[Journal Article] 高分解能ラマン分光測定による最先端LSIのひずみ評価2013
- Author(s)
  小椋厚志、小瀬村大亮
- Journal Title
  
  応用物理
  
  Volume: 82 Pages: 317-321
- NAID
  10031159922
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360125
[Journal Article] Measurement of Anisotropic Biaxial Stresses in Sil-xGex /Si Mesa Structures bu Oil-Immersion Raman Spectroscopy2013
- Author(s)
  D. Kosenura, M. Tonita. K. Usuda, T. Tezuka, and A. Ogura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CA05-04CA05
- DOI
  10.7567/jjap.52.04ca05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Iensor Evaluation of Anisotropic stress Relaxation in Mesa-shaped Sige Layer on Si Substpate by Electron Back Scattering Pattern Measureaent : Comparison between Raman Measurement and Finite Element Method Simulation2013
- Author(s)
  M, Tomita, M. Nagasaka, D. Kosemura, K. Usuda, T. Tezuka, and A. Ogura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CA06-04CA06
- DOI
  10.7567/jjap.52.04ca06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Super-Resolution Raman Spectroscopy by Digital Image Processing2013
- Author(s)
  M. Tomita. H. Hashiguchi, T. Yaiiaguchi, D. Kosemura, M. Takei, and A. Ogura
- Journal Title
  
  Journal of Spectroscopy
  
  Volume: 2013 Pages: 1-9
- DOI
  10.1155/2013/459032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-23860051
[Journal Article] Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method2013
- Author(s)
  K. Usuda, T. Tezuka, D. Kosemura, M. Tomita, and A. Ogura
- Journal Title
  
  Solid-State Electronics
  
  Volume: Vol.83 Pages: 46-49
- DOI
  10.1016/j.sse.2013.01.042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10247, KAKENHI-PROJECT-23860051
[Journal Article] Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance2012
- Author(s)
  Hiroki Hashiguchi, Munehisa Takei
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 17
- DOI
  10.1063/1.4761959
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09826, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Investigation of Phonon DeformationPotentials in Si_<1_x>Ge_x by Oil-ImmersionRaman Spectroscopy2012
- Author(s)
  D. Kosemura, K. Usuda, and A. Ogura
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111301-111301
- DOI
  10.1143/apex.5.111301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Evaluation of Anisotropic StrainRelaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura, M. Tomita, K. Usuda, and A.Ogura
- Journal Title
  
  Japanese Journal of AppliedPhysics
  
  Volume: 51 Issue: 2S Pages: 02BA03-02BA03
- DOI
  10.1143/jjap.51.02ba03
- NAID
  210000140194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Journal Article] Channel Strain Measurement in 32-nm-Node Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Raman Spectroscopy2012
- Author(s)
  Munehisa Takei
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 4S Pages: 04DA04-04DA04
- DOI
  10.1143/jjap.51.04da04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09826, KAKENHI-PROJECT-23860051, KAKENHI-PROJECT-24360125
[Presentation] 選択的イオン注入法で作製した一軸性歪Geの異方性応力評価2016
- Author(s)
  山本章太郎、武内一真、小瀬村大亮、此島詩織、澤野憲太郎、小椋厚志
- Organizer
  第63回応用物理学会春季学術講演
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropic Strain Evaluation Induced in Group IV Materials using Liquid-Immersion Raman Spectroscopy2016
- Author(s)
  A. Ogura, and D. Kosemura
- Organizer
  16th International Workshop on Junction Technology
- Place of Presentation
  Shanghai, China
- Year and Date
  2016-05-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] SiGe薄膜のラマンスペクトルに見られるブロードピークの起源の検討2016
- Author(s)
  武内一真、小瀬村大亮、横川凌、澤本直美、臼田宏治、小椋厚志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度歪SiGeメサ構造に印加された異方性2軸応力評価2015
- Author(s)
  山本章太郎、武内一真、富田基裕、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] Evaluation of Anisotropic Biaxial stress in Si1-xGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura
- Organizer
  ECS Meeting
- Place of Presentation
  Chicago, USA
- Year and Date
  2015-05-25
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015
- Author(s)
  K. Takeuchi, D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, and A. Ogura
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona
- Year and Date
  2015-10-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度SiGeにおけるフォノン変形ポテンシャルの導出2015
- Author(s)
  武内一真、小瀬村大亮、山本章太郎、富田基裕、臼田宏治、小椋厚志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 高Ge濃度SiGeにおけるフォノン変形ポテンシャルの導出2015
- Author(s)
  武内一真、小瀬村大亮, 山本章太郎, 富田基裕, 臼田宏治, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015
- Author(s)
  S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura
- Organizer
  227th ECS Meeting
- Place of Presentation
  Chicago, Illinois
- Year and Date
  2015-05-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 substrates2015
- Author(s)
  R. Imai, D. Kosemura, and A. Ogura
- Organizer
  ECS meeting
- Place of Presentation
  Chicago, USA
- Year and Date
  2015-05-25
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] EBSP法を用いた微細な全Ge濃度域における歪SiGeメサ構造に生じる応力緩和分布の評価2015
- Author(s)
  富田基裕、小瀬村大亮, 臼田宏治, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] EBSP法を用いたSiGe/Geナノワイヤー構造に生じる応力緩和分布の高空間分解能測定2015
- Author(s)
  富田基裕、武内一真、山本章太郎、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、愛知
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 局在プラズモン共鳴を用いたラマン分光法におけるひずみSi表面のAg粒子被覆率と信号増強の関係2015
- Author(s)
  木嶋隆浩、山本章太郎、横川凌、武内一真、村上達美、小瀬村大亮、小椋厚志
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 高Ge濃度歪SiGeメサ構造に印加された異方性2軸応力評価2015
- Author(s)
  山本章太郎、武内一真, 富田基裕, 小瀬村大亮, 臼田宏冶, 小椋厚志
- Organizer
  第６2回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 局在プラズモン共鳴を用いたトランジスタチャネル領域最表面のラマン評価2014
- Author(s)
  木嶋隆浩、小瀬村大亮、シティノルヒダヤー・ビンティ・チェモハマドユソフ、山本章太郎、今井亮佑、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 液浸ラマン分光法を用いたTO/LOフォノンスペクトル励起による高Ge濃度歪SiGeメサ構造の異方性2軸応力緩和の観測2014
- Author(s)
  山本章太郎、小瀬村大亮、富田基裕、武内一真、横川凌、臼田宏治、小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014
- Author(s)
  S. Yamamoto, D. Kosemura, S. N. C.M.Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-09
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 銀ナノ粒子による電場増強効果を用いたGaN最表面のラマン測定2014
- Author(s)
  今井亮佑、小瀬村大亮、永田晃基、シティノルヒダヤー・ビンティ・チェモハマドユソフ、木嶋隆浩、山本章太郎、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] Evaluation of Stress Relaxation in Strained SiGe Wire by Two-dimensional Super-resolution Raman S2014
- Author(s)
  Motohiro Tomita, Daisuke Kosemura, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura
- Organizer
  24nd International Conference on Raman Spectroscopy (23rd ICORS)
- Place of Presentation
  Yena, Germany
- Year and Date
  2014-08-11
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014
- Author(s)
  S. Yamamoto, D. Kosemura, M. Tomita, S. N. Che Mohd Yusoff, K. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura
- Organizer
  ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-09
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 液浸ラマン分光法を用いた TO/LOフォノンスペクトル励起による高 Ge濃度歪 SiGe メサ構造の異方性 2 軸応力緩和の観測2014
- Author(s)
  山本章太郎、小瀬村大亮，富田基裕，武内一真，横川　凌，臼田宏冶，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropoic Strain Evaluation in the Finite Si Area by Surface Plasmon Enhanced Raman Spectroscopy2014
- Author(s)
  A. Ogura and D. Kosemura
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06
- Invited
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Strain evaluation in the Si channels of transistors by surface-enhanced Raman spectroscopy2014
- Author(s)
  T. Kijima, D. Kosemura, S. N. Che Mohd Yusoff, S. Yamamoto, R. Imai, and A. Ogura
- Organizer
  International Conference on Raman Spectroscopy
- Place of Presentation
  Yena, Germany
- Year and Date
  2014-08-11
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 液浸ラマン分光法による選択的イオン注入により作製された一軸歪SiGe/Siの異方性2軸応力評価2014
- Author(s)
  山本章太郎、小瀬村大亮、富田基裕、武内一真、横川凌、米倉瑛介、澤野憲太郎、野平博司、小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] EBSP 法を用いた微細な歪 SiGe メサ構造に生じる応力緩和分布の Ge 濃度依存性評価2014
- Author(s)
  富田基裕、小瀬村大亮，臼田宏治，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy2014
- Author(s)
  A. Ogura and D. Kosemura
- Organizer
  ECS and SMEQ Joint International Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06
- Invited
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 液浸ラマン分光法による選択的イオン注入により作製された一軸歪 SiGe/Siの異方性 2軸応力評価2014
- Author(s)
  山本章太郎、小瀬村大亮，富田基裕，武内一真，横川　凌，米倉瑛介，澤野憲太郎，野平博司，小椋厚志
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] チップ増強ラマン分光法による歪Si評価2014
- Author(s)
  小瀬村大亮、富田基裕、シティノルヒダヤー・ビンティ・チェモハマドユソフ、後藤千絵、川口哲成、三澤真弓、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 表面増強ラマン分光法による歪SiGe薄膜のLO/TOフォノン励起2014
- Author(s)
  山本章太郎、小瀬村大亮、シティノルヒダヤー・ビンティ・チェモハマドユソフ、木嶋隆浩、今井亮佑、臼田宏治、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 表面増強ラマン散乱を用いた歪Si異方性二軸応力のパターンサイズ依存測定2014
- Author(s)
  岩崎竜平、永田晃基、小瀬村大亮、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-25790049
[Presentation] 舳構造歪SiGe層に生じる応力緩和分布のテンソル評価2013
- Author(s)
  富田基裕、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  舳構造歪SiGe層に生じる応力緩和分布のテンソル評価
- Place of Presentation
  神奈川県
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy2012
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  nternational Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore, India
- Year and Date
  2012-08-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Raman spectroscopy for strain measurement in state-of-the-art LSI2012
- Author(s)
  A. Ogura, D. Kosemura, M. Takei, and M.Tomita
- Organizer
  International Conference on Solid StateDevices and Materials
- Place of Presentation
  Kyoto
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Biaxial Stress Measurements in Mesa-shaped Strained Si Layers by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  Daisuke Kosemura, Motohiro Tomita, Koji Usuda, Atsushi Ogura
- Organizer
  International Symposium on "Development of Core Technologies for Green Nanoelectronics"
- Place of Presentation
  Tsukuba, Japna
- Year and Date
  2012-03-14
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 有限要素法による微細構造歪SSOI層の応力緩和に対する膜厚依存性の評価2012
- Author(s)
  富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] High-mobility and Low-parasitic Resistance Characteristics in Strained Ge Nanowire pMOSFETs with Metal Source/Drain Structure Formed by Doping-free Processes2012
- Author(s)
  Keiji Ikeda, Mizuki Ono, Daisuke Kosemura, Koji Usuda, Minoru Oda, Yuuichi Kamimuta, Toshifumi Irisawa, Yoshihiko Moriyama, Atsushi Ogura, Tsutomu Tezuka
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  Hawai
- Year and Date
  2012-06-14
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Anisotropic Biaxial Stress Evaluation in SiGe/Si Mesa Structures by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura, MダTomita, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Anisotropic Biaxial Stress Evaluation in SiGe/Si Mesa Structures by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Measurements of Anisotropic Biaxial Stresses in x=0.15 and 0.30 Si1-xGex Nanostructures by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method and NBD2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, T. Tezuka, and A. Ogura
- Organizer
  The 6th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 異方的SSOI層の軸分解ラマン測定2012
- Author(s)
  小瀬村大亮、富田基裕、臼田宏治、小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  山形大学
- Year and Date
  2012-09-02
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion hman method2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, A. Ogura, and T. Tezuka
- Organizer
  International SiGe Technology and Deice Meeting
- Place of Presentation
  Berkeley, CA
- Year and Date
  2012-06-04
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] ラマン分光法による超薄膜SOIフォノン閉じ込めの評価2012
- Author(s)
  武井宗久,橋口裕樹,小瀬村大亮,内藤大明。黒澤裕也,内田健,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 微細構造Si1-xGexに印加された異方性応力の加工形状およびGe濃度依存性2012
- Author(s)
  小瀬村大亮
- Organizer
  応用物理学会学術会議
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Evaluation of Anisotropic Stress Relaxation in Mesa-shaped Strained Si Layer by Super-resolution Raman Spectroscopy and FEM Simulation2012
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, T. Tezuka, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸技術および超解像技術を用いたラマン分光法の高空間分解能化2012
- Author(s)
  富田基裕、橋口祐樹、山口拓也、武井宗久、小瀬村大亮、小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  山形大学
- Year and Date
  2012-09-02
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Polarized Dependence of Intensity from Strained Si on Insulator in Tip-Enhanced Raman Spectroscopy2012
- Author(s)
  D. Kosemura
- Organizer
  International Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Evaluation of Strain relaxation at mesa edge of strained SiGe layer on Si by oil-immersion Raman spectroscopy, NBD, and FEM simulation2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, A. Ogura, and T. Tezuka
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped Strained Si Layers by FEM Simulation2012
- Author(s)
  Motohiro Tomita, Daisuke Kosemura, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura
- Organizer
  International Symposium on "Development of Core Technologies for Green Nanoelectronics"
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2012-03-14
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 局所表面プラズモン共鳴を用いたラマン分光法による歪Si基板の応力評価2012
- Author(s)
  橋口裕樹,武井宗久,小瀬村大亮,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Characterization ofanisotropic strain relaxation after mesaisolation for strained SGOI and SiGe/Si structure with newly developed high-NAand oil-immersion Raman method2012
- Author(s)
  K. Usuda, D. Kosemura, M. Tomita, A.Ogura, and T. Tezuka
- Organizer
  2012 Intl.SiGe Technology and Device Meeting
- Place of Presentation
  Berkley, USA
- Year and Date
  2012-06-01
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] EBSP法を用いたSiGe/Siメサ構造における異方性応力緩和評価2012
- Author(s)
  長坂将也,富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] TO phonon Excitation using Surface Enhanced Raman Scattering for Stress Evaluation2012
- Author(s)
  H. Hashiguchi, M. Takei, D. Kosemura, and A. Ogura
- Organizer
  International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] High-mobility and Low-parasitic Resistance Characteristics in Strained Ge Nanowire pMOSFETs with Metal Source/Drain Structure Formed by Doping-free Processes2012
- Author(s)
  K. Ikeda, M. Ono, D. Kosemura, K. Usuda, M. Oda, Y. Kamimuta, T. Irisawa, Y. Moriyama, A. Ogura, and T. Teuka
- Organizer
  Symposium on VLSI Technology and Circuit
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2012-06-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 有限要素法による微細構造歪SiGe層の異方性応力緩和評価2012
- Author(s)
  富田基裕、小瀬村大亮、臼田宏治、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 微細構造Sil-xGexに印加された異方性応力の加工形状およびGe濃度依存性2012
- Author(s)
  小瀬村大亮,富田基裕,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Measurements ofAnisotropic Biaxial Stresses in x=0.15 and0.30 Si1〓xGex Nanostructures by Oil-Immersion Raman Spectroscopy2012
- Author(s)
  D. Kosemura, M. Tomita, K. Usuda, T.Tezuka, and A. Ogura
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSP2012
- Author(s)
  M. Tomita, M. Nagasaka, D. Kosemura, K. Usuda, T. Tezuka。and A. Ogura
- Organizer
  International conference on Solid State Devices and Material
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] SSOI微細構造における異方性応力緩和の膜羣依存性評価2012
- Author(s)
  シテイノルヒダヤーチェモハマドユソフ,富田基裕,小瀬村大亮,臼田宏治,手塚勉,小椋厚志
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] TO Phonon Excitation Using Surface Enhanced Raman Scattering for Stress Evaluation2012
- Author(s)
  H. Hashiguchi, M. Takei, D. Kosemura, A.Ogura
- Organizer
  The 6th InternationalSymposium on Advanced Science andTechnology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Polarized Dependence of Intensity from Strained Si on Insulator in Tip-Enhanced RamanSpectroscopy2012
- Author(s)
  D. kosemura, J. M. Atkin, S. Berweger, R. L.Olmon, M. B. Raschke, A. Ogura
- Organizer
  International Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore, India
- Year and Date
  2012-08-13
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 高NA、油浸ラマン分光によるメサ分離ひずみSGOI層の異方性ひずみ評価2012
- Author(s)
  臼田宏治,小瀬村大亮,富田基裕,小椋厚志,手塚勉
- Organizer
  秋季応用物理学会
- Place of Presentation
  愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 液浸ラマン分光法による歪SiGeの異方性応力評価2012
- Author(s)
  小瀬村大亮、富田基裕、臼田宏治、小椋厚志
- Organizer
  春季応用物理学会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Polarization Dependence of Intensity from Strained Si on Insulator in Tip-Enhanced Raman Spectroscopy2012
- Author(s)
  D, Kosemura, J. M. Atkin, S. Berweger, R. L. Olmon, M. B. Raschke, and A. Ogura
- Organizer
  International Conference on Raman Spectroscopy
- Place of Presentation
  Bangalore, India
- Year and Date
  2012-08-14
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy2011
- Author(s)
  Daisuke Kosemura, Motohiro Tomita, Koji Usuda, Atsushi Ogura
- Organizer
  International Conference on Solid State Device and Materials
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] Channel Strain measurements in 32-nm-node CMOSFETs2011
- Author(s)
  Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura
- Organizer
  International Conference on Solid State Device and Materials
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-23860051
[Presentation] 液浸ラマン分光法による高Ge濃度圧縮歪SiGeメサ構造/Ge基板からのLO, TOフォノンスペクトルの観測
- Author(s)
  小瀬村大亮、富田基裕、臼田宏治、手塚勉、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Analysis of Electrical Field in Surface Enhanced Raman Spectroscopy Using Strained-Si Substrate
- Author(s)
  シティノルヒダヤーチェモハマドユソフ、小瀬村大亮、木嶋隆浩、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate
- Author(s)
  M. Tomita, D. Kosemura, K. Usuda, A. Ogura
- Organizer
  223rd ECS Meeting
- Place of Presentation
  Tront, Canada
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] Characterization of Anisotropic Strain Relaxation of Ge-Rich SGOI Nanowire Formed by the Two-Step Ge-Condensation Technique with High-NA and Oil-Immersion Raman Spectroscopy
- Author(s)
  K. Usuda, D. Kosemura, K. Ikeda, H. Hashiguti, M. Tomita, A. Ogura, T. Tezuka
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka、Japan
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 高Ge濃度SGOIワイヤーの異方性ひずみ評価
- Author(s)
  臼田宏治、池田圭司、小瀬村大亮、富田基裕、小椋厚志、手塚勉
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 表面増強ラマン分光法による歪SiGe薄膜のLO/TOフォノン励起
- Author(s)
  山本章太郎、小瀬村大亮、シティノルヒダヤーモハマドユソフ、木嶋隆浩、今井亮佑、臼田宏治、小椋厚志
- Organizer
  第６１回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-24360125
[Presentation] 有限要素法による異種の構造から導入される重畳応力の評価
- Author(s)
  富田基裕、小瀬村大亮、小椋厚志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-24360125

1. OGURA ATSUSHI (00386418)

# of Collaborated Projects: 1 results

# of Collaborated Products: 47 results
2. NUMASAWA Youichiro (50569837)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. SAWAMOTO Naomi (20595087)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
4. 廣沢一郎 (00360834)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. USUDA Koji

# of Collaborated Projects: 1 results

# of Collaborated Products: 34 results

KOSEMURA Daisuke 小瀬村 大亮

小瀬村 大亮 コセムラ ダイスケ

Research Projects

Research Products

Co-Researchers

Examination of anisotropic stress state evaluation in III-V compound semiconductors by oil-immersion Raman spectroscopyPrincipal Investigator

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Multi-axial analysis of strain states introduced in nano area on Ge and SiGe super-thin films by Raman spectroscopy

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Study of High-Spatial Resolution Strain Measurements in Semiconductor Devices Using Tip-Enhanced Raman SpectroscopyPrincipal Investigator

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[Book] Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectrosopy2012

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[Book] Advanced Aspects of Spectroscopy2012

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[Journal Article] Examination of phonon deformation potentials for accurate strain measurements in silicon-germanium alloys with the whole composition range by Raman spectroscopy2016

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DOI

NAID

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[Journal Article] Origin of additional broad peaks in Raman spectra from thin germanium-rich silicon-germanium films2016

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NAID

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[Journal Article] Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 substrates2015

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[Journal Article] Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge Mesa-Structure by Oil-immersion Raman Spectroscopy2015

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DOI

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[Journal Article] Evaluation of Anisotropic Biaxial stress in Si1-xGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy2015

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[Journal Article] Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge Substrate by oil-immersion Raman Spectroscopy2015

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[Journal Article] Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy2014

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[Journal Article] Electrical field analysis of metal-surface plasmon resonance using a biaxially strained Si substrate2014

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[Journal Article] Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy2014

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[Journal Article] 高分解能ラマン分光測定による最先端LSIのひずみ評価2013

Author(s)

Journal Title

KOSEMURA Daisuke 小瀬村大亮

小瀬村大亮コセムラダイスケ

[Journal Article] Origin of additional broad peaks in Raman spectra　from thin germanium-rich silicon-germanium films2016

[Journal Article] Electrical field analysis of　metal-surface plasmon resonance using a biaxially strained Si substrate2014