YATABE ZENJI 谷田部然治

… Alternative Names

谷田部然治ヤタベゼンジ

Yatabe Zenji 谷田部然治

YATABE Zenji 谷田部然治

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Researcher Number	00621773
Other IDs	https://orcid.org/0000-0003-2069-6677
Affiliation (Current)	2025: 熊本大学, 半導体・デジタル研究教育機構, 准教授
Affiliation (based on the past Project Information) *help	2023: 熊本大学, 半導体・デジタル研究教育機構, 准教授 2020 – 2021: 熊本大学, 大学院先端科学研究部(工), 准教授 2019 – 2021: 熊本大学, 大学院先導機構, 助教 2015 – 2017: 熊本大学, 大学院先導機構, 助教 2015: 熊本大学, 学内共同利用施設等, 助教 2014: 北海道大学, 学内共同利用施設等, 特任助教 2013: 北海道大学, 量子集積エレクトロニクス研究センター, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 27:Chemical engineering and related fields / Electronic materials/Electric materials
Keywords	Principal Investigator 高電子移動度トランジスタ / 窒化物半導体 / 窒化ガリウム / 表面パッシベーション / ゲート絶縁膜 / ミストCVD / 界面準位 / 界面準位密度 / 非線形最小二乗法 / ミストCVD法 … More / トランジスタ / 電子準位 / 高周波デバイス / パワーデバイス / MIS / HEMT / MIS構造 … More Except Principal Investigator GaN / AlGaN / Hi-K dielectric / MIS / HEMT / AlGaN/GaN / Normally-off / 相互作用 / 流動現象 / 積分変換法 / スペクトル解析 / 分布 / 相転移 / 複雑流体 / ナノ材料 / 電子・電気材料 / 表面・界面物性 / 半導体物性 / エネルギー変換 / 高電子移動度トランジスタ / 低損傷プロセス / 多孔質構造 / 光電気化学 / 化学センサ / 窒化物半導体 Less

Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
- Principal Investigator
  
  ASUBAR JOEL
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Fukui
Gate insulator deposition process for GaN-based MOS devices using mist-CVD techniquePrincipal Investigator
- Principal Investigator
  
  谷田部然治
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kumamoto University
Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD methodPrincipal Investigator
- Principal Investigator
  
  Yatabe Zenji
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kumamoto University
Integral transformation method to investigate flow characteristics of polymer solution from the phase transition perspective
- Principal Investigator
  
  Hidema Ruri
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 27:Chemical engineering and related fields
- Research Institution
  Kobe University
Characterization and control of insulator/AlGaN interface for power device applicationPrincipal Investigator
- Principal Investigator
  
  Yatabe Zenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kumamoto University
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021
- Author(s)
  Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 129 Issue: 12 Pages: 121102-121102
- DOI
  10.1063/5.0039564
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PLANNED-16H06421
[Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique2021
- Author(s)
  Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, Kenta Naito, Tomohiro Motoyama, Zenji Yatabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 3 Pages: 031004-031004
- DOI
  10.35848/1882-0786/abe19e
- NAID
  120007160996
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
[Journal Article] Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers2020
- Author(s)
  Ruri Hidema, Zenji Yatabe, Hikari Takahashi, Ryusei Higashikawa, Hiroshi Suzuki
- Journal Title
  
  Soft Matter
  
  Volume: 16 Issue: 29 Pages: 6826-6833
- DOI
  10.1039/d0sm00887g
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K22083
[Journal Article] Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films2019
- Author(s)
  Zenji, Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 7 Pages: 070905-070905
- DOI
  10.7567/1347-4065/ab29e3
- NAID
  120006951248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04473
[Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018
- Author(s)
  T. Hashizume, K. Nishiguch, S. Kaneki, J. Kuzmik, Z. Yatabe
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 78 Pages: 85-95
- DOI
  10.1016/j.mssp.2017.09.028
- NAID
  120006456416
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017
- Author(s)
  R. Stoklas, D. Gregusova, M. Blaho, K. Frohlich, J. Novak, M. Matys, Z. Yatabe, P. Kordos, T. Hashizume
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 4 Pages: 045018-045018
- DOI
  10.1088/1361-6641/aa5fcb
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016
- Author(s)
  M. Matys, B. Adamowicz, A. Domanowska, A. Michalewicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 120 Issue: 22
- DOI
  10.1063/1.4971409
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04672, KAKENHI-PROJECT-15K18034
[Journal Article] Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge2016
- Author(s)
  T. Sato, Y. Kumazaki, H. Kida, A. Watanabe, Z. Yatabe and S. Matsuda
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 31 Issue: 1 Pages: 014012-014012
- DOI
  10.1088/0268-1242/31/1/014012
- NAID
  120005905606
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures2016
- Author(s)
  M. Matys, R. Stoklas, J. Kuzmik, B. Adamowicz, Z. Yatabe, T. Hashizume
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Issue: 20
- DOI
  10.1063/1.4952708
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Z. Yatabe, J. T. Asubar, and T. Hashizume2016
- Author(s)
  Insulated gate and surface passivation structures for GaN-based power transistors
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 49 Issue: 39 Pages: 1-19
- DOI
  10.1088/0022-3727/49/39/393001
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-15K18034
[Journal Article] Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching2016
- Author(s)
  Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EJ12-04EJ12
- DOI
  10.7567/jjap.55.04ej12
- NAID
  120005981365
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates2016
- Author(s)
  S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 16
- DOI
  10.1063/1.4965296
- NAID
  120006360059
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-15K18034
[Journal Article] Effects of surface charging and interface states on current stability of GaN HEMTs2015
- Author(s)
  T. Hashizume, Z. Yatabe, K. Nishiguchi
- Journal Title
  
  Proceedings of the 39th Workshop on Compound Semiconductor Devices and Integrated Circuits
  
  Volume: - Pages: 51-54
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode2015
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  ECS Electrochemical Letters
  
  Volume: 4 Issue: 5 Pages: H11-H13
- DOI
  10.1149/2.0031505eel
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Al2O3/AlGaN/GaN構造の界面電子準位評価2015
- Author(s)
  谷田部然治, 橋詰保
- Journal Title
  
  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
  
  Volume: 115 Pages: 1-4
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination2015
- Author(s)
  T. Sato, H. Kida, Y. Kumazaki, and Z. Yatabe
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 2 Pages: 161-166
- DOI
  10.1149/06902.0161ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-63 Pages: 63-66
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-170 Pages: 51-54
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching2014
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, and T. Sato
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: 141 Issue: 10 Pages: H705-H709
- DOI
  10.1149/2.1101410jes
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices2013
- Author(s)
  Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato
- Journal Title
  
  Applied Surface Science
  
  Volume: 279 Pages: 116-120
- DOI
  10.1016/j.apsusc.2013.04.046
- NAID
  120005322421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures2013
- Author(s)
  R. Jinbo, Y. Kumazaki, Z. Yatabe and T. Sato
- Journal Title
  
  ECS Transactions
  
  Volume: 50 Pages: 247-252
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: vol. 113, no. 39, ED2013-27 Pages: 61-64
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN自立基板上に作製したmist-Al2O3/n-GaN構造の評価2024
- Author(s)
  谷田部然治, 福光将也, ラズアンハディラ, 尾藤圭悟, 越智亮太, 中村有水, 佐藤威友
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] 1/f雑音の電子トラップ時定数分布2024
- Author(s)
  谷田部然治, 葛西誠也
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] Al2O3/AlGaN/GaN高電子移動度トランジスタの閾値変動と界面準位の関連性2023
- Author(s)
  福光将也, 谷田部然治
- Organizer
  2023年度(第76回)電気・情報関係学会九州支部連合大会
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] ゲート絶縁膜堆積プロセスとデバイス評価技術の開拓2023
- Author(s)
  谷田部然治
- Organizer
  電子情報通信学会北海道支部講演会
- Invited
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] ミストCVD法によるアモルファスAl2O3薄膜とmist-Al2O3/AlGaN/GaN MISキャパシタの界面評価2023
- Author(s)
  廣重輝, 尾藤圭悟, 橋本蓮, 石黒真輝, アスバルジョエル, 中村有水, 谷田部然治
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] GaN-based MOS-HEMTs with Mist Chemical Vapor Deposited Gate Insulator2023
- Author(s)
  Keigo Bito, Hikaru Hiroshige, Ren Hashimoto, Masaki Ishiguro, Joel T. Asubar, Yusui Nakamura, Zenji Yatabe
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] GaN-based MOS-HEMTs with Mist Chemical Vapor Deposited Insulator2023
- Author(s)
  K. Bito, H. Hiroshige, R. Hashimoto, M. Ishiguro, J. T. Asubar, Y. Nakamura, and Z. Yatabe
- Organizer
  14th international Conference on Nitride Semiconductors (ICNS 14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03971
[Presentation] 界面準位がワイドバンドギャップ半導体MOSキャパシタの容量-電圧特性に与える影響2023
- Author(s)
  福島匠, 谷田部然治
- Organizer
  第14回半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] 次世代パワー・高周波デバイスの実現に向けたワイドギャップ半導体界面の評価と制御2023
- Author(s)
  谷田部然治
- Organizer
  日本セラミックス協会 2024年年会
- Invited
- Data Source
  KAKENHI-PROJECT-23K03973
[Presentation] ミストCVD法により堆積したAl2O3絶縁膜の評価とmist-Al2O3/AlGaN/GaN MOS-HEMTへの応用2022
- Author(s)
  本山智洋, 浦野駿, バラトフアリ, 中村有水, 葛原正明, アスバルジョエル, 谷田部然治
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist-Al2O3とALD-Al2O3を絶縁膜としたAlGaN/GaN MIS-HEMTs2022
- Author(s)
  浦野駿, アスバルジョエル, ロウルイシャン, ムハンマドファリス, 石黒真輝, 永瀬樹, バラトフアリ, 本山智洋, 中村有水, 葛原正明, 谷田部然治
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法によるAl2O3絶縁膜を用いたAlGaN/GaN MIS-HEMTの作製と評価2021
- Author(s)
  本山智洋, Ali Baratov, Rui Shan Low, 浦野駿, 中村有水, 葛原正明, 谷田部然治, Joel T. Asubar
- Organizer
  第10回TIAパワーエレクトロニクス・サマースクール
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021
- Author(s)
  Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法により作製したAl2O3薄膜とGaN系MIS-HEMTへの応用2021
- Author(s)
  本山智洋, Ali Baratov, Rui Shan Low, 浦野駿, 中村有水, 葛原正明, Joel T. Asubar, 谷田部然治
- Organizer
  2021年日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021
- Author(s)
  M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Electrical properties of GaN-based MISHEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021
- Author(s)
  S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 溶液中の高分子の堅さと絡まり合いが局所粘度分布に与える影響2020
- Author(s)
  東川竜晟，日出間るり，谷田部然治，鈴木洋
- Organizer
  第68回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] 溶液中の高分子の絡まり合いが局所の粘度分布に与える影響2020
- Author(s)
  東川竜晟，日出間るり，谷田部然治，鈴木洋
- Organizer
  日本レオロジー学会第47年会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Characterization of mist-CVD deposited Al2O3 films on AlGaN/GaN heterostructures2020
- Author(s)
  Tomohiro Motoyama, Kenta Naito, Yusui Nakamura, Zenji Yatabe, Rui Shan Low, Itsuki Nagase, Ali Baratov, Hirokuni Tokuda, Masaaki Kuzuhara, Joel T. Asubar
- Organizer
  IEEE IMFEDK 2020 Satellite event
- Invited
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 高分子溶液および界面活性剤溶液の局所粘度測定と分布抽出2020
- Author(s)
  日出間るり，東川竜晟，谷田部然治，鈴木洋
- Organizer
  第68回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Mist-CVD法によるAl2O3絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性2020
- Author(s)
  ロールイシャン, 永瀬樹, バラトフアリ, アスバルジョエルタクラ, 徳田博邦, 葛原正明, 谷田部然治, 内藤健太, 本山智洋, 中村有水
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法による4-nm Al2O3ゲート絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性2020
- Author(s)
  Low Rui Shan, 河端晋作, Joel T. Asubar, 徳田博邦, 葛原正明, 谷田部然治, 内藤健太, 西村和樹, 中村有水
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Distribution of local viscosity of viscoelastic solutions measured by using optical tweezers2019
- Author(s)
  Ruri Hidema, Hikari Takahashi, Zenji Yatabe, Hiroshi Suzuki
- Organizer
  The 18th Asian Pacific Confederation of Chemical Engineering
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Calculating charge relaxation time distribution in a transistor device from noise spectrum2019
- Author(s)
  Zenji Yatabe, Joel T. Asubar, Seiya Kasai
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Formation of amorphous Al2O3 thin films by mist chemical vapor deposition2019
- Author(s)
  Kazuki Nishimura, Kenta Naito, Zenji Yatabe, Yusui Nakamura
- Organizer
  14th International Student Conference on Advanced Science and Technology 2019 (ICAST 2019)
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of AlxTi1-xOy thin films synthesized using mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Kazuki Nishimura, Yusui Nakamura
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of amorphous aluminium oxide thin films synthesized by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Organizer
  Compound Semiconductor Week 2019 (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of Al1-xTixOy thin films deposited by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Kazuki Nishimura, Yusui Nakamura
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 光ピンセットによる粘弾性流体の粘度測定と粘度分布の抽出2019
- Author(s)
  日出間るり，髙橋光，谷田部然治，鈴木洋
- Organizer
  第67回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Synthesis and characterization of AlTiO films by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Organizer
  Compound Semiconductor Week 2019 (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 光ピンセットによる粘弾性流体の局所粘度の分布測定2019
- Author(s)
  高橋光，日出間るり，谷田部然治，鈴木洋
- Organizer
  日本レオロジー学会第46年会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Al2O3 thin films deposited by mist-CVD for gate insulator application in GaN-based devices2019
- Author(s)
  Kenta Naito, Kazuki Nishimura, Zenji Yatabe, Joel T. Asubar, Yusui Nakamura
- Organizer
  The 4th Asian Applied Physics Conference (Asian-APC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist-chemical vapor deposition grown-single crystalline oxide semiconductors2017
- Author(s)
  Z. Yatabe, H. Tanoue, K. Okita, M. Takenouchi, T. Ishida, T. Tsuda, T. Mikuriya, S. Nagaoka, K. Sue, Y. Nakamura
- Organizer
  35th Samahang Pisika ng Pilipinas Physics Conference and Annual Meeting (SPP 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] ミストCVD法によるAlTiO薄膜の形成2017
- Author(s)
  津田貴昭, 西山光士, 谷田部然治, 須恵耕二, 中村有水
- Organizer
  平成29年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs2016
- Author(s)
  J. T. Asubar, H. Tokuda, M. Kuzuhara, Z. Yatabe, K. Nishiguchi, T. Hashizume
- Organizer
  The 34th SPP Physics Conference and Annual Meeting
- Place of Presentation
  University of the Philippines Visayas (Philippines))
- Year and Date
  2016-08-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors2016
- Author(s)
  谷田部然治, 堀祐臣, 馬万程, Joel T. Asubar, 赤澤正道, 佐藤威友橋詰保
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市)
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures2016
- Author(s)
  Z. Yatabe, J. T. Asubar, Y. Nakamura, T. Hashizume
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba (Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Size-controlled formation of high-aspect ratio porous nanostructures on GaN substrates utilizing photo-assisted electrochemical etching for photovoltaic applications2015
- Author(s)
  Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 裏面光照射電気化学法によるGaN陽極酸化表面の分析2015
- Author(s)
  枝元将彰, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Characterization and Control of Insulated Gate Interfaces for Normally-Off AlGaN/GaN HEMTs2015
- Author(s)
  Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 Compound Semiconductor Week (CSW 2015)
- Place of Presentation
  Santa Barbara (USA)
- Year and Date
  2015-06-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Z. Yatabe, J. Ohira, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process2015
- Author(s)
  Y. Kumazaki, T. Sato and Z. Yatabe
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center, Sapporo
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Characterization and control of GaN MOS interfaces for power transistor application2015
- Author(s)
  Tamotsu Hashizume, Zenji Yatabe
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
- Place of Presentation
  日本科学未来館 (東京都江東区)
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Characterization of Surface/Interface States for Stability Improvement of GaN-Based HEMTs2015
- Author(s)
  Tamotsu Hashizume, Zenji Yatabe
- Organizer
  2015 MRS Spring Meeting & Exhibit
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2015-04-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] 界面電子準位とGaNパワーデバイスの動作安定性2015
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治
- Organizer
  日本学術振興会半導体界面制御技術第154委員会第95回研究会
- Place of Presentation
  東京工業大学 (東京都港区)
- Year and Date
  2015-05-29
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki and Z. Yatabe
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Effects of surface charging and interface states on current stability of GaN HEMTs2015
- Author(s)
  T. Hashizume, Z. Yatabe, K. Nishiguchi
- Organizer
  39th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)
- Place of Presentation
  Smolenice (Slovakia)
- Year and Date
  2015-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Nature and origin of interface states at dielectric/III-N heterojunction interfaces2015
- Author(s)
  Maciej Matys, Boguslawa Adamowicz, Roman Stoklas, Masamichi Akazawa, Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Boston (USA)
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Al2O3/AlGaN/GaN構造の界面電子準位評価2015
- Author(s)
  谷田部然治, 橋詰保
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会/応用物理学会シリコンテクノロジー分科会第182回研究集会
- Place of Presentation
  名古屋大学 (愛知県名古屋市)
- Year and Date
  2015-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会/電気学会フィジカルセンサ/バイオ・マイクロシステム合同研究会
- Place of Presentation
  機会振興会館, 東京都芝区
- Year and Date
  2015-08-03
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki, Z. Yatabe
- Organizer
  228th ECS meeting
- Place of Presentation
  Hyatt Regency Phoenix and Phoenix Convention Center, Phoenix, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  豊橋技術科学大学, 豊橋市
- Year and Date
  2015-05-28
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Influence of the Oxygen-Plasma Treatment on the AlGaN/GaN MOSHFETs with HfO2 by ALD to Reduce Leakage Current2015
- Author(s)
  Roman Stoklas, Dagmar Gregusova, Michal Blaho, Karol Frohlich, Jozef Novak, Peter Kordos, Maciek Matys, Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 Compound Semiconductor Week (CSW 2015)
- Place of Presentation
  Santa Barbara (USA)
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Zenji Yatabe, Joji Ohira, Taketomo Sato, Tamotsu Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  ひだホテルプラザ (岐阜県高山市)
- Year and Date
  2015-08-23
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] High-selective etching of p-GaN layers on AlGaN/GaN heterostructures by electrochemical process2015
- Author(s)
  M. Edamoto, Y. Kumazaki, Z. Yatabe, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 界面・バルク電子準位がGaNトランジスタの動作特性に与える影響2014
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治, 佐藤威友
- Organizer
  第1回先進パワー半導体分科会研究会「ワイドギャップ半導体パワーデバイスの信頼性」
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法と裏面光照射法によるGaN多孔質ナノ構造の形成2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural and Optical Characterization of GaN Porous Structures Formed by Photo-assisted Electrochemical Process2013
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe and T. Sato
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質構造の形状制御と化学センサへの応用2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第49回応用物理学会北海道支部学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸コンベンションセンター（神戸市、兵庫県）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  静岡大学（静岡県浜松市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質ナノ構造の表面形状と光電気化学特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by Electrochemical Process2013
- Author(s)
  T. Sato, Y. Kumazaki, R. Jinbo and Z. Yatabe
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  32nd Electronic Materials Symposium (EMS32)
- Place of Presentation
  ラフォーレ修善寺（滋賀県守山市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と光電極特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大学（大阪府吹田市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Correlation between Structural and Optical Properties of GaN Porous Structures Formed by Photo-assisted Electrochemical Etching
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, T. Sato
- Organizer
  The International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw Congress Center (WROCLAW, POLAND)
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of III-V Semiconductor Porous Nanostructures
- Author(s)
  T. Sato, Y. Kumazaki, A. Watanabe, Z. Yatabe
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural control of GaN porous structures for high-sensitive chemical sensors
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, T. Sato
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of GaN Porous Structures Under UV-Light Irradiation for Photoelectrochemical Application
- Author(s)
  T. Sato, A. Watanabe, Y. Kumazaki, Z. Yatabe
- Organizer
  The 2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Moon Palace Resort (Cancun, Mexico)
- Year and Date
  2014-10-05 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] ドライエッチングがAl2O3/AlGaN/GaN MOS界面特性に与える影響
- Author(s)
  谷田部然治, 大平城二, 佐藤威友, 橋詰保
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] III-V族化合物半導体の電気化学エッチングと微細加工への応用
- Author(s)
  佐藤威友, 熊崎祐介, 渡部晃生，谷田部然治
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学堆積法によるCu2O/GaNヘテロ構造の形成と特性評価
- Author(s)
  熊崎祐介, 近江沙也夏, 谷田部然治, 佐藤威友
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural Properties and Control of GaN Porous Nanostructures Formed by Photo-assisted Electrochemical Process
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  The 7th International symposium on Surface Science
- Place of Presentation
  くにびきメッセ（島根県松江市）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第50回応用物理学会北海道支部学術講演会
- Place of Presentation
  旭川市勤労者福祉会館（北海道旭川市）
- Year and Date
  2015-01-09 – 2015-01-10
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成と形状制御の向上
- Author(s)
  熊崎祐介, 渡部晃生，谷田部然治, 佐藤威友
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングを用いた窒化物半導体多孔質構造の形成
- Author(s)
  渡部晃生，熊崎祐介，谷田部然治，佐藤威友
- Organizer
  2014年電気化学会秋期大会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-27 – 2014-09-28
- Data Source
  KAKENHI-PROJECT-25289079

1. ASUBAR JOEL (10574220)

# of Collaborated Projects: 3 results

# of Collaborated Products: 16 results
2. 中村有水 (00381004)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
3. SATO Taketomo (50343009)

# of Collaborated Projects: 1 results

# of Collaborated Products: 38 results
4. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. MOTOHISA Junichi (60212263)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. Hidema Ruri (20598172)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
7. 末吉哲郎 (20315287)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 鈴木洋 (90206524)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
9. 葛原正明 (20377469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 赤澤正道

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

YATABE ZENJI 谷田部 然治

谷田部 然治 ヤタベ ゼンジ

Yatabe Zenji 谷田部 然治

YATABE Zenji 谷田部 然治

Research Projects

Research Products

Co-Researchers

Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

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Gate insulator deposition process for GaN-based MOS devices using mist-CVD techniquePrincipal Investigator

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Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD methodPrincipal Investigator

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Integral transformation method to investigate flow characteristics of polymer solution from the phase transition perspective

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Characterization and control of insulator/AlGaN interface for power device applicationPrincipal Investigator

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Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors

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[Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021

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[Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique2021

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[Journal Article] Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers2020

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[Journal Article] Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films2019

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[Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018

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[Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017

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[Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016

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YATABE ZENJI 谷田部然治

谷田部然治ヤタベゼンジ

Yatabe Zenji 谷田部然治

YATABE Zenji 谷田部然治