YATABE ZENJI 谷田部然治

… Alternative Names

Yatabe Zenji 谷田部然治

YATABE Zenji 谷田部然治

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Researcher Number	00621773
Other IDs	https://orcid.org/0000-0003-2069-6677
Affiliation (Current)	2024: 熊本大学, 半導体・デジタル研究教育機構, 准教授
Affiliation (based on the past Project Information) *help	2023: 熊本大学, 半導体・デジタル研究教育機構, 准教授 2020 – 2021: 熊本大学, 大学院先端科学研究部(工), 准教授 2019 – 2021: 熊本大学, 大学院先導機構, 助教 2015 – 2017: 熊本大学, 大学院先導機構, 助教 2015: 熊本大学, 学内共同利用施設等, 助教 2014: 北海道大学, 学内共同利用施設等, 特任助教 2013: 北海道大学, 量子集積エレクトロニクス研究センター, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 27:Chemical engineering and related fields / Electronic materials/Electric materials
Keywords	Principal Investigator 高電子移動度トランジスタ / 窒化ガリウム / ゲート絶縁膜 / ミストCVD / 窒化物半導体 / 界面準位密度 / トランジスタ / 電子準位 / 高周波デバイス / パワーデバイス … More / 表面パッシベーション / MIS / HEMT / 界面準位 / MIS構造 … More Except Principal Investigator HEMT / GaN / AlGaN / Hi-K dielectric / Normally-off / 相互作用 / 流動現象 / 積分変換法 / スペクトル解析 / 分布 / 相転移 / 複雑流体 / ナノ材料 / 電子・電気材料 / 表面・界面物性 / 半導体物性 / エネルギー変換 / 高電子移動度トランジスタ / 低損傷プロセス / 多孔質構造 / 光電気化学 / 化学センサ / 窒化物半導体 Less

Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
- Principal Investigator
  
  ASUBAR JOEL
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Fukui
Gate insulator deposition process for GaN-based MOS devices using mist-CVD techniquePrincipal Investigator
- Principal Investigator
  
  谷田部然治
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kumamoto University
Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD methodPrincipal Investigator
- Principal Investigator
  
  Yatabe Zenji
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kumamoto University
Integral transformation method to investigate flow characteristics of polymer solution from the phase transition perspective
- Principal Investigator
  
  Hidema Ruri
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 27:Chemical engineering and related fields
- Research Institution
  Kobe University
Characterization and control of insulator/AlGaN interface for power device applicationPrincipal Investigator
- Principal Investigator
  
  Yatabe Zenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kumamoto University
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021
- Author(s)
  Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 129 Issue: 12 Pages: 121102-121102
- DOI
  10.1063/5.0039564
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PLANNED-16H06421
[Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique2021
- Author(s)
  Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, Kenta Naito, Tomohiro Motoyama, Zenji Yatabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 3 Pages: 031004-031004
- DOI
  10.35848/1882-0786/abe19e
- NAID
  120007160996
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
[Journal Article] Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers2020
- Author(s)
  Ruri Hidema, Zenji Yatabe, Hikari Takahashi, Ryusei Higashikawa, Hiroshi Suzuki
- Journal Title
  
  Soft Matter
  
  Volume: 16 Issue: 29 Pages: 6826-6833
- DOI
  10.1039/d0sm00887g
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K22083
[Journal Article] Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films2019
- Author(s)
  Zenji, Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 7 Pages: 070905-070905
- DOI
  10.7567/1347-4065/ab29e3
- NAID
  120006951248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04473
[Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018
- Author(s)
  T. Hashizume, K. Nishiguch, S. Kaneki, J. Kuzmik, Z. Yatabe
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 78 Pages: 85-95
- DOI
  10.1016/j.mssp.2017.09.028
- NAID
  120006456416
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017
- Author(s)
  R. Stoklas, D. Gregusova, M. Blaho, K. Frohlich, J. Novak, M. Matys, Z. Yatabe, P. Kordos, T. Hashizume
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 4 Pages: 045018-045018
- DOI
  10.1088/1361-6641/aa5fcb
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034, KAKENHI-PLANNED-16H06421
[Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016
- Author(s)
  M. Matys, B. Adamowicz, A. Domanowska, A. Michalewicz, R. Stoklas, M. Akazawa, Z. Yatabe, and T. Hashizume
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 120 Issue: 22
- DOI
  10.1063/1.4971409
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04672, KAKENHI-PROJECT-15K18034
[Journal Article] Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge2016
- Author(s)
  T. Sato, Y. Kumazaki, H. Kida, A. Watanabe, Z. Yatabe and S. Matsuda
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 31 Issue: 1 Pages: 014012-014012
- DOI
  10.1088/0268-1242/31/1/014012
- NAID
  120005905606
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures2016
- Author(s)
  M. Matys, R. Stoklas, J. Kuzmik, B. Adamowicz, Z. Yatabe, T. Hashizume
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Issue: 20
- DOI
  10.1063/1.4952708
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Z. Yatabe, J. T. Asubar, and T. Hashizume2016
- Author(s)
  Insulated gate and surface passivation structures for GaN-based power transistors
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 49 Issue: 39 Pages: 1-19
- DOI
  10.1088/0022-3727/49/39/393001
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-15K18034
[Journal Article] Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching2016
- Author(s)
  Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EJ12-04EJ12
- DOI
  10.7567/jjap.55.04ej12
- NAID
  120005981365
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates2016
- Author(s)
  S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar and T. Hashizume
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 16
- DOI
  10.1063/1.4965296
- NAID
  120006360059
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-15K18034
[Journal Article] Effects of surface charging and interface states on current stability of GaN HEMTs2015
- Author(s)
  T. Hashizume, Z. Yatabe, K. Nishiguchi
- Journal Title
  
  Proceedings of the 39th Workshop on Compound Semiconductor Devices and Integrated Circuits
  
  Volume: - Pages: 51-54
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode2015
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  ECS Electrochemical Letters
  
  Volume: 4 Issue: 5 Pages: H11-H13
- DOI
  10.1149/2.0031505eel
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Al2O3/AlGaN/GaN構造の界面電子準位評価2015
- Author(s)
  谷田部然治, 橋詰保
- Journal Title
  
  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
  
  Volume: 115 Pages: 1-4
- Data Source
  KAKENHI-PROJECT-15K18034
[Journal Article] Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination2015
- Author(s)
  T. Sato, H. Kida, Y. Kumazaki, and Z. Yatabe
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 2 Pages: 161-166
- DOI
  10.1149/06902.0161ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-63 Pages: 63-66
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-170 Pages: 51-54
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching2014
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, and T. Sato
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: 141 Issue: 10 Pages: H705-H709
- DOI
  10.1149/2.1101410jes
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices2013
- Author(s)
  Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato
- Journal Title
  
  Applied Surface Science
  
  Volume: 279 Pages: 116-120
- DOI
  10.1016/j.apsusc.2013.04.046
- NAID
  120005322421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures2013
- Author(s)
  R. Jinbo, Y. Kumazaki, Z. Yatabe and T. Sato
- Journal Title
  
  ECS Transactions
  
  Volume: 50 Pages: 247-252
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: vol. 113, no. 39, ED2013-27 Pages: 61-64
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] ミストCVD法により堆積したAl2O3絶縁膜の評価とmist-Al2O3/AlGaN/GaN MOS-HEMTへの応用2022
- Author(s)
  本山智洋, 浦野駿, バラトフアリ, 中村有水, 葛原正明, アスバルジョエル, 谷田部然治
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist-Al2O3とALD-Al2O3を絶縁膜としたAlGaN/GaN MIS-HEMTs2022
- Author(s)
  浦野駿, アスバルジョエル, ロウルイシャン, ムハンマドファリス, 石黒真輝, 永瀬樹, バラトフアリ, 本山智洋, 中村有水, 葛原正明, 谷田部然治
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法によるAl2O3絶縁膜を用いたAlGaN/GaN MIS-HEMTの作製と評価2021
- Author(s)
  本山智洋, Ali Baratov, Rui Shan Low, 浦野駿, 中村有水, 葛原正明, 谷田部然治, Joel T. Asubar
- Organizer
  第10回TIAパワーエレクトロニクス・サマースクール
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021
- Author(s)
  Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法により作製したAl2O3薄膜とGaN系MIS-HEMTへの応用2021
- Author(s)
  本山智洋, Ali Baratov, Rui Shan Low, 浦野駿, 中村有水, 葛原正明, Joel T. Asubar, 谷田部然治
- Organizer
  2021年日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021
- Author(s)
  M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Electrical properties of GaN-based MISHEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021
- Author(s)
  S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
- Organizer
  The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 溶液中の高分子の堅さと絡まり合いが局所粘度分布に与える影響2020
- Author(s)
  東川竜晟，日出間るり，谷田部然治，鈴木洋
- Organizer
  第68回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] 溶液中の高分子の絡まり合いが局所の粘度分布に与える影響2020
- Author(s)
  東川竜晟，日出間るり，谷田部然治，鈴木洋
- Organizer
  日本レオロジー学会第47年会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Characterization of mist-CVD deposited Al2O3 films on AlGaN/GaN heterostructures2020
- Author(s)
  Tomohiro Motoyama, Kenta Naito, Yusui Nakamura, Zenji Yatabe, Rui Shan Low, Itsuki Nagase, Ali Baratov, Hirokuni Tokuda, Masaaki Kuzuhara, Joel T. Asubar
- Organizer
  IEEE IMFEDK 2020 Satellite event
- Invited
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 高分子溶液および界面活性剤溶液の局所粘度測定と分布抽出2020
- Author(s)
  日出間るり，東川竜晟，谷田部然治，鈴木洋
- Organizer
  第68回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Mist-CVD法によるAl2O3絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性2020
- Author(s)
  ロールイシャン, 永瀬樹, バラトフアリ, アスバルジョエルタクラ, 徳田博邦, 葛原正明, 谷田部然治, 内藤健太, 本山智洋, 中村有水
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] ミストCVD法による4-nm Al2O3ゲート絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性2020
- Author(s)
  Low Rui Shan, 河端晋作, Joel T. Asubar, 徳田博邦, 葛原正明, 谷田部然治, 内藤健太, 西村和樹, 中村有水
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Distribution of local viscosity of viscoelastic solutions measured by using optical tweezers2019
- Author(s)
  Ruri Hidema, Hikari Takahashi, Zenji Yatabe, Hiroshi Suzuki
- Organizer
  The 18th Asian Pacific Confederation of Chemical Engineering
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Calculating charge relaxation time distribution in a transistor device from noise spectrum2019
- Author(s)
  Zenji Yatabe, Joel T. Asubar, Seiya Kasai
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Formation of amorphous Al2O3 thin films by mist chemical vapor deposition2019
- Author(s)
  Kazuki Nishimura, Kenta Naito, Zenji Yatabe, Yusui Nakamura
- Organizer
  14th International Student Conference on Advanced Science and Technology 2019 (ICAST 2019)
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of AlxTi1-xOy thin films synthesized using mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Kazuki Nishimura, Yusui Nakamura
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of amorphous aluminium oxide thin films synthesized by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Organizer
  Compound Semiconductor Week 2019 (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Characterization of Al1-xTixOy thin films deposited by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Kazuki Nishimura, Yusui Nakamura
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 光ピンセットによる粘弾性流体の粘度測定と粘度分布の抽出2019
- Author(s)
  日出間るり，髙橋光，谷田部然治，鈴木洋
- Organizer
  第67回レオロジー討論会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Synthesis and characterization of AlTiO films by mist-CVD2019
- Author(s)
  Zenji Yatabe, Koshi Nishiyama, Takaaki Tsuda, Kazuki Nishimura, Yusui Nakamura
- Organizer
  Compound Semiconductor Week 2019 (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] 光ピンセットによる粘弾性流体の局所粘度の分布測定2019
- Author(s)
  高橋光，日出間るり，谷田部然治，鈴木洋
- Organizer
  日本レオロジー学会第46年会
- Data Source
  KAKENHI-PROJECT-19K22083
[Presentation] Al2O3 thin films deposited by mist-CVD for gate insulator application in GaN-based devices2019
- Author(s)
  Kenta Naito, Kazuki Nishimura, Zenji Yatabe, Joel T. Asubar, Yusui Nakamura
- Organizer
  The 4th Asian Applied Physics Conference (Asian-APC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04473
[Presentation] Mist-chemical vapor deposition grown-single crystalline oxide semiconductors2017
- Author(s)
  Z. Yatabe, H. Tanoue, K. Okita, M. Takenouchi, T. Ishida, T. Tsuda, T. Mikuriya, S. Nagaoka, K. Sue, Y. Nakamura
- Organizer
  35th Samahang Pisika ng Pilipinas Physics Conference and Annual Meeting (SPP 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] ミストCVD法によるAlTiO薄膜の形成2017
- Author(s)
  津田貴昭, 西山光士, 谷田部然治, 須恵耕二, 中村有水
- Organizer
  平成29年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs2016
- Author(s)
  J. T. Asubar, H. Tokuda, M. Kuzuhara, Z. Yatabe, K. Nishiguchi, T. Hashizume
- Organizer
  The 34th SPP Physics Conference and Annual Meeting
- Place of Presentation
  University of the Philippines Visayas (Philippines))
- Year and Date
  2016-08-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors2016
- Author(s)
  谷田部然治, 堀祐臣, 馬万程, Joel T. Asubar, 赤澤正道, 佐藤威友橋詰保
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市)
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures2016
- Author(s)
  Z. Yatabe, J. T. Asubar, Y. Nakamura, T. Hashizume
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba (Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Size-controlled formation of high-aspect ratio porous nanostructures on GaN substrates utilizing photo-assisted electrochemical etching for photovoltaic applications2015
- Author(s)
  Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 裏面光照射電気化学法によるGaN陽極酸化表面の分析2015
- Author(s)
  枝元将彰, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Characterization and Control of Insulated Gate Interfaces for Normally-Off AlGaN/GaN HEMTs2015
- Author(s)
  Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 Compound Semiconductor Week (CSW 2015)
- Place of Presentation
  Santa Barbara (USA)
- Year and Date
  2015-06-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Z. Yatabe, J. Ohira, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process2015
- Author(s)
  Y. Kumazaki, T. Sato and Z. Yatabe
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center, Sapporo
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Characterization and control of GaN MOS interfaces for power transistor application2015
- Author(s)
  Tamotsu Hashizume, Zenji Yatabe
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
- Place of Presentation
  日本科学未来館 (東京都江東区)
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Characterization of Surface/Interface States for Stability Improvement of GaN-Based HEMTs2015
- Author(s)
  Tamotsu Hashizume, Zenji Yatabe
- Organizer
  2015 MRS Spring Meeting & Exhibit
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2015-04-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] 界面電子準位とGaNパワーデバイスの動作安定性2015
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治
- Organizer
  日本学術振興会半導体界面制御技術第154委員会第95回研究会
- Place of Presentation
  東京工業大学 (東京都港区)
- Year and Date
  2015-05-29
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki and Z. Yatabe
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Effects of surface charging and interface states on current stability of GaN HEMTs2015
- Author(s)
  T. Hashizume, Z. Yatabe, K. Nishiguchi
- Organizer
  39th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)
- Place of Presentation
  Smolenice (Slovakia)
- Year and Date
  2015-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Nature and origin of interface states at dielectric/III-N heterojunction interfaces2015
- Author(s)
  Maciej Matys, Boguslawa Adamowicz, Roman Stoklas, Masamichi Akazawa, Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Boston (USA)
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Al2O3/AlGaN/GaN構造の界面電子準位評価2015
- Author(s)
  谷田部然治, 橋詰保
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会/応用物理学会シリコンテクノロジー分科会第182回研究集会
- Place of Presentation
  名古屋大学 (愛知県名古屋市)
- Year and Date
  2015-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会/電気学会フィジカルセンサ/バイオ・マイクロシステム合同研究会
- Place of Presentation
  機会振興会館, 東京都芝区
- Year and Date
  2015-08-03
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki, Z. Yatabe
- Organizer
  228th ECS meeting
- Place of Presentation
  Hyatt Regency Phoenix and Phoenix Convention Center, Phoenix, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  豊橋技術科学大学, 豊橋市
- Year and Date
  2015-05-28
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Influence of the Oxygen-Plasma Treatment on the AlGaN/GaN MOSHFETs with HfO2 by ALD to Reduce Leakage Current2015
- Author(s)
  Roman Stoklas, Dagmar Gregusova, Michal Blaho, Karol Frohlich, Jozef Novak, Peter Kordos, Maciek Matys, Zenji Yatabe, Tamotsu Hashizume
- Organizer
  2015 Compound Semiconductor Week (CSW 2015)
- Place of Presentation
  Santa Barbara (USA)
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Zenji Yatabe, Joji Ohira, Taketomo Sato, Tamotsu Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  ひだホテルプラザ (岐阜県高山市)
- Year and Date
  2015-08-23
- Data Source
  KAKENHI-PROJECT-15K18034
[Presentation] High-selective etching of p-GaN layers on AlGaN/GaN heterostructures by electrochemical process2015
- Author(s)
  M. Edamoto, Y. Kumazaki, Z. Yatabe, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 界面・バルク電子準位がGaNトランジスタの動作特性に与える影響2014
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治, 佐藤威友
- Organizer
  第1回先進パワー半導体分科会研究会「ワイドギャップ半導体パワーデバイスの信頼性」
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法と裏面光照射法によるGaN多孔質ナノ構造の形成2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural and Optical Characterization of GaN Porous Structures Formed by Photo-assisted Electrochemical Process2013
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe and T. Sato
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質構造の形状制御と化学センサへの応用2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第49回応用物理学会北海道支部学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸コンベンションセンター（神戸市、兵庫県）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  静岡大学（静岡県浜松市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質ナノ構造の表面形状と光電気化学特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by Electrochemical Process2013
- Author(s)
  T. Sato, Y. Kumazaki, R. Jinbo and Z. Yatabe
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  32nd Electronic Materials Symposium (EMS32)
- Place of Presentation
  ラフォーレ修善寺（滋賀県守山市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と光電極特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大学（大阪府吹田市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Correlation between Structural and Optical Properties of GaN Porous Structures Formed by Photo-assisted Electrochemical Etching
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, T. Sato
- Organizer
  The International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw Congress Center (WROCLAW, POLAND)
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of III-V Semiconductor Porous Nanostructures
- Author(s)
  T. Sato, Y. Kumazaki, A. Watanabe, Z. Yatabe
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural control of GaN porous structures for high-sensitive chemical sensors
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, T. Sato
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of GaN Porous Structures Under UV-Light Irradiation for Photoelectrochemical Application
- Author(s)
  T. Sato, A. Watanabe, Y. Kumazaki, Z. Yatabe
- Organizer
  The 2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Moon Palace Resort (Cancun, Mexico)
- Year and Date
  2014-10-05 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] ドライエッチングがAl2O3/AlGaN/GaN MOS界面特性に与える影響
- Author(s)
  谷田部然治, 大平城二, 佐藤威友, 橋詰保
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] III-V族化合物半導体の電気化学エッチングと微細加工への応用
- Author(s)
  佐藤威友, 熊崎祐介, 渡部晃生，谷田部然治
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学堆積法によるCu2O/GaNヘテロ構造の形成と特性評価
- Author(s)
  熊崎祐介, 近江沙也夏, 谷田部然治, 佐藤威友
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural Properties and Control of GaN Porous Nanostructures Formed by Photo-assisted Electrochemical Process
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  The 7th International symposium on Surface Science
- Place of Presentation
  くにびきメッセ（島根県松江市）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第50回応用物理学会北海道支部学術講演会
- Place of Presentation
  旭川市勤労者福祉会館（北海道旭川市）
- Year and Date
  2015-01-09 – 2015-01-10
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成と形状制御の向上
- Author(s)
  熊崎祐介, 渡部晃生，谷田部然治, 佐藤威友
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングを用いた窒化物半導体多孔質構造の形成
- Author(s)
  渡部晃生，熊崎祐介，谷田部然治，佐藤威友
- Organizer
  2014年電気化学会秋期大会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-27 – 2014-09-28
- Data Source
  KAKENHI-PROJECT-25289079

1. ASUBAR JOEL (10574220)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
2. 中村有水 (00381004)

# of Collaborated Projects: 2 results

# of Collaborated Products: 18 results
3. SATO Taketomo (50343009)

# of Collaborated Projects: 1 results

# of Collaborated Products: 38 results
4. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. MOTOHISA Junichi (60212263)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. Hidema Ruri (20598172)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
7. 末吉哲郎 (20315287)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 鈴木洋 (90206524)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
9. 葛原正明 (20377469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 赤澤正道

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

YATABE ZENJI 谷田部 然治

Yatabe Zenji 谷田部 然治

YATABE Zenji 谷田部 然治

Research Projects

Research Products

Co-Researchers

Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

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Gate insulator deposition process for GaN-based MOS devices using mist-CVD techniquePrincipal Investigator

Principal Investigator

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Review Section

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Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD methodPrincipal Investigator

Principal Investigator

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Review Section

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Integral transformation method to investigate flow characteristics of polymer solution from the phase transition perspective

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Review Section

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Characterization and control of insulator/AlGaN interface for power device applicationPrincipal Investigator

Principal Investigator

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Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors

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[Journal Article] Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation2021

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[Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique2021

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NAID

Data Source

[Journal Article] Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers2020

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[Journal Article] Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films2019

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NAID

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[Journal Article] State of the art on gate insulation and surface passivation for GaN-based power HEMTs2018

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NAID

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[Journal Article] Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction2017

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[Journal Article] On the origin of interface states at oxide/III-nitride heterojunction interfaces2016

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YATABE ZENJI 谷田部然治

Yatabe Zenji 谷田部然治

YATABE Zenji 谷田部然治