Matsumoto Tsubasa 松本翼

Researcher Number	00739568
Other IDs
Affiliation (Current)	2025: 金沢大学, ナノマテリアル研究所, 准教授
Affiliation (based on the past Project Information) *help	2020 – 2023: 金沢大学, ナノマテリアル研究所, 准教授 2019: 金沢大学, ナノマテリアル研究所, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator パワーデバイス / MOSFET / ダイヤモンド / 炭素固溶反応 / CVD / エッチング / 半導体 / 高周波 / 反転層 / MOS

Development of atomic-level structure fabrication technique for diamond MOSFETs with high mobility and high voltagePrincipal Investigator
- Principal Investigator
  
  Matsumoto Tsubasa
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanazawa University
Development of low-loss inversion channel diamond MOSFET using nitrogen dopingPrincipal Investigator
- Principal Investigator
  
  Matsumoto Tsubasa
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kanazawa University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation

[Journal Article] Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films2024
- Author(s)
  Matsushima Yuki、Mura Mikiya、Matsumoto Tsubasa、Ichikawa Kimiyoshi、Hayashi Kan、Yamasaki Satoshi、Inokuma Takao、Yoshikawa Taro、Makino Toshiharu、Tokuda Norio
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 145 Pages: 111116-111116
- DOI
  10.1016/j.diamond.2024.111116
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01363
[Journal Article] Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth2022
- Author(s)
  Kobayashi Kazuki、Zhang Xufang、Makino Toshiharu、Matsumoto Tsubasa、Inokuma Takao、Yamasaki Satoshi、Nebel Christoph E.、Tokuda Norio
- Journal Title
  
  Applied Surface Science
  
  Volume: 593 Pages: 153340-153340
- DOI
  10.1016/j.apsusc.2022.153340
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-21H01363
[Journal Article] Mechanical damage-free surface planarization of single-crystal diamond based on carbon solid solution into nickel2021
- Author(s)
  Sakauchi Kazuto、Nagai Masatsugu、Tabakoya Taira、Nakamura Yuto、Yamasaki Satoshi、Nebel Christoph E.、Zhang Xufang、Matsumoto Tsubasa、Inokuma Takao、Tokuda Norio
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 116 Pages: 108390-108390
- DOI
  10.1016/j.diamond.2021.108390
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15042, KAKENHI-PROJECT-18KK0383
[Journal Article] Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body2021
- Author(s)
  Matsumoto Tsubasa、Yamakawa Tomoya、Kato Hiromitsu、Makino Toshiharu、Ogura Masahiko、Zhang Xufang、Inokuma Takao、Yamasaki Satoshi、Tokuda Norio
- Journal Title
  
  Applied Physics Letters
  
  Volume: 119 Issue: 24 Pages: 242105-242105
- DOI
  10.1063/5.0075964
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01363, KAKENHI-PROJECT-18KK0383
[Journal Article] Inversion channel MOSFET on heteroepitaxially grown free-standing diamond2021
- Author(s)
  Zhang Xufang、Matsumoto Tsubasa、Nakano Yuta、Noguchi Hitoshi、Kato Hiromitsu、Makino Toshiharu、Takeuchi Daisuke、Ogura Masahiko、Yamasaki Satoshi、Nebel Christoph E.、Inokuma Takao、Tokuda Norio
- Journal Title
  
  Carbon
  
  Volume: 175 Pages: 615-619
- DOI
  10.1016/j.carbon.2020.11.072
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042, KAKENHI-PROJECT-20K14773
[Journal Article] Insight into Al2O3/diamond interface states with high-temperature conductance method2020
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 9 Pages: 092104-092104
- DOI
  10.1063/5.0021785
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773, KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042
[Journal Article] Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method2020
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, and Norio Tokuda
- Journal Title
  
  CARBON
  
  Volume: 168 Pages: 659-664
- DOI
  10.1016/j.carbon.2020.07.019
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K14773, KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042
[Journal Article] Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations2019
- Author(s)
  Matsumoto Tsubasa、Kato Hiromitsu、Makino Toshiharu、Ogura Masahiko、Takeuchi Daisuke、Yamasaki Satoshi、Inokuma Takao、Tokuda Norio
- Journal Title
  
  Applied Physics Letters
  
  Volume: 114 Issue: 24 Pages: 242101-242101
- DOI
  10.1063/1.5100328
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K15042, KAKENHI-PROJECT-17H02786
[Presentation] n型ダイヤモンド半導体における不純物濃度と接触抵抗の関係2024
- Author(s)
  松本翼，村光希哉，松島優希，宮崎泰一，林寛1，市川公善1，牧野俊晴2，猪熊孝夫1，　山崎聡1，徳田規夫
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Proposal of inversion channel diamond MOSFET with drift layer-free for low-loss and high-voltage2024
- Author(s)
  Tsubasa Matsumoto, Kai Sato, Yuto Nakamura, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Traore Aboulaye, Kimiyoshi Ichikawa, Kan Hayashi, Takako Inokuma, Satoshi Yamasaki, Norio Tokuda
- Organizer
  Hasselt Diamond Workshop 2024 - SBDD XXVIII
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] New structure of inversion channel diamond MOSFET for high power operation2024
- Author(s)
  Tsubasa Matsumoto, Kai Sato, Yuto Nakamura, Traore Aboulaye, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Kimiyoshi Ichikawa, Kan Hayashi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda
- Organizer
  Kanazawa Diamond Workshop 2024
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Advances in diamond MOSFET technologies2023
- Author(s)
  Norio Tokuda, Kazuki Kobayashi, Kan Hayashi, Kimiyoshi Ichikawa, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Xufang Zhang1†, Hiromitsu Kato2, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi2, Christoph E. Nebel
- Organizer
  E-MRS 2023 Spring Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] 高濃度窒素ドーピングによる接触抵抗低減とダイヤモンド(100) p+-i-n+ダイオードの実証2023
- Author(s)
  松島優希, 村光希哉, 松本翼, 市川公善, 林寛, 山崎聡, 猪熊孝夫, 徳田規夫
- Organizer
  第37回　ダイヤモンドシンポジウム
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Evaluation of Contact Resistance of Diamond MOSFETs2023
- Author(s)
  Kai Sato1, Kimiyoshi Ichikawa1, Kan Hayashi1, Hiromitsu Kato2 , Toshiharu Makino2 Masahiko Ogura2, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1, Tsubasa Matsumoto
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Lateral growth over holes on diamond (111) substrate2023
- Author(s)
  Kouryou Morishita1, Kimiyoshi Ichikawa2, Kan Hayashi1,2, Tsubasa Matsumoto, Satoshi Yamasaki2, Takao Inokuma1,2, Norio Tokuda
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Fabrication of PIN Diodes with Heavily Nitrogen Doped Diamond Film2023
- Author(s)
  Yuki Matsushima, Mikiya Mura, Tsubasa Matsumoto, Kimiyoshi Ichikawa, Kan Hayashi1,2, Satoshi Yamasaki2, Takao Inokuma1, Norio Tokuda
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] ダイヤモンドMOSFETにおけるドリフト抵抗フリー構造の提案2023
- Author(s)
  松本翼、佐藤解、中村勇斗、Traore Aboulaye、牧野俊晴、加藤宙光3、小倉政彦3 、市川公善1 、林寛1 、猪熊孝夫1 、山﨑聡1 、德田規夫
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Fabrication of Schottky-pn diodes using lightly nitrogen doped diamond film2023
- Author(s)
  Shota Abe1, Kai Sato1, Yuki Matsushima1, Kimiyoshi Ichikawa2, Kan Hayashi, Satoshi Yamasaki, Takao Inokuma, Norio Tokuda, Tsubasa Matsumoto
- Organizer
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Niの炭素固溶反応による平坦化技術を応用した埋込ソース・ドレイン構造を有するMOSFETの作製と実証2023
- Author(s)
  加納翼1　佐藤解1　林寛1,2　市川公善2　吉川太朗2　猪熊孝夫1　山崎聡, 徳田規夫, 松本翼
- Organizer
  第37回　ダイヤモンドシンポジウム
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] Diamond MOSFET for Next-Generation Power Devices2021
- Author(s)
  Tsubasa Matsumoto, Tomoya Yamakawa, Xufang Zhang, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda
- Organizer
  3D PEIM'2021 symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] チャネル部追成長による反転層ダイヤモンドMOSFETの電気特性改善2021
- Author(s)
  山河智哉，松本翼，猪熊孝夫，山崎聡，張　旭芳, 加藤宙光, 小倉政彦, 牧野俊晴, C.E.Nebel, 徳田規夫
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01363
[Presentation] ダイヤモンドデバイスとMOS界面の現状2020
- Author(s)
  松本翼、桜井海匡、加藤宙光、牧野俊晴、小倉政彦、竹内大輔、山崎聡、猪熊孝夫、徳田規夫
- Organizer
  第25回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－
- Invited
- Data Source
  KAKENHI-PROJECT-19K15042
[Presentation] ダイヤモンドデバイスとMOS界面の現状2020
- Author(s)
  松本翼,　桜井海匡,加藤宙光,　牧野俊晴,　小倉政彦,　竹内大輔,　山崎聡,　猪熊孝夫,　徳田規夫
- Organizer
  電子デバイス界面テクノロジー研究会（第25回研究会）
- Data Source
  KAKENHI-PROJECT-19K15042
[Presentation] Recent progress for inversion channel mobility improvement in diamond MOSFETs2019
- Author(s)
  T.Matsumoto,　U.Sakurai, T.Yamakawa, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Yamasaki, T.Inokuma, N.Tokuda,
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15042
[Presentation] 水素プラズマ処理導入によるダイヤモンド(111)MOS構造の界面準位密度低減とMOSFETのチャネル移動度向上2019
- Author(s)
  桜井海匡，松本翼，長井雅嗣，加藤宙光，牧野俊晴，小倉政彦，竹内大輔，山崎聡，猪熊孝夫，C. E. Nebel，德田規夫
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15042
[Presentation] 窒素ドープボディを用いた反転層ダイヤモンドMOSFETの特性2019
- Author(s)
  松本翼、桜井海匡，山河智哉、加藤宙光、牧野俊晴、小倉政彦、竹内大輔、猪熊孝夫、山崎聡、徳田規夫
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15042

1. TOKUDA Norio

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
2. 張旭芳

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Matsumoto Tsubasa 松本 翼

Research Projects

Research Products

Co-Researchers

Development of atomic-level structure fabrication technique for diamond MOSFETs with high mobility and high voltagePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of low-loss inversion channel diamond MOSFET using nitrogen dopingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Mechanical damage-free surface planarization of single-crystal diamond based on carbon solid solution into nickel2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Inversion channel MOSFET on heteroepitaxially grown free-standing diamond2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Insight into Al2O3/diamond interface states with high-temperature conductance method2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations2019

Author(s)

Journal Title

DOI

Data Source

[Presentation] n型ダイヤモンド半導体における不純物濃度と接触抵抗の関係2024

Author(s)

Organizer

Data Source

[Presentation] Proposal of inversion channel diamond MOSFET with drift layer-free for low-loss and high-voltage2024

Author(s)

Organizer

Data Source

[Presentation] New structure of inversion channel diamond MOSFET for high power operation2024

Author(s)

Organizer

Data Source

[Presentation] Advances in diamond MOSFET technologies2023

Author(s)

Organizer

Data Source

[Presentation] 高濃度窒素ドーピングによる 接触抵抗低減とダイヤモンド(100) p+-i-n+ダイオードの実証2023

Author(s)

Organizer

Data Source

[Presentation] Evaluation of Contact Resistance of Diamond MOSFETs2023

Author(s)

Organizer

Data Source

Matsumoto Tsubasa 松本翼

[Presentation] 高濃度窒素ドーピングによる接触抵抗低減とダイヤモンド(100) p+-i-n+ダイオードの実証2023

[Presentation] Niの炭素固溶反応による平坦化技術を応用した埋込ソース・ドレイン構造を有するMOSFETの作製と実証2023