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Fukuchi Atsushi  福地 厚

Researcher Number 00748890
Other IDs
  • ORCIDhttps://orcid.org/0000-0003-2529-8897
Affiliation (based on the past Project Information) *help 2023: 北海道大学, 情報科学研究院, 助教
2019 – 2021: 北海道大学, 情報科学研究院, 助教
2016 – 2018: 北海道大学, 情報科学研究科, 助教
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Except Principal Investigator
Electron device/Electronic equipment
Keywords
Principal Investigator
ニューロモルフィックデバイス / 非線形伝導現象 / 酸化物薄膜 / ルテニウム酸化物 / 抵抗変化型メモリ / エピタキシャル薄膜 / 強相関電子系 / 抵抗変化メモリ / 金属絶縁体転移 / 強相関電子系非平衡相転移 … More / 人工知能素子 / 非平衡相転移 / 量子相転移 / 薄膜 / 金属酸化物 / シナプス素子 / 酸化タンタル / プローブ顕微鏡 / 人工シナプス / 走査型プローブ顕微鏡法 / 抵抗スイッチング / アモルファス酸化物 / メモリスタ / マイクロ・ナノデバイス / ナノ材料 / 先端機能デバイス / 電子・電気材料 / 強相関エレクトロニクス / 強相関電子材料 / モット転移 / 固相エピタキシャル成長法 / エピタキシャル成長 / 酸化物エレクトロニクス … More
Except Principal Investigator
その場計測技術 / 先端機能デバイス / ナノ材料 / 電子デバイス・機器 / 電子・電気材料 / 電子顕微鏡 / 抵抗変化メモリ Less
  • Research Projects

    (4 results)
  • Research Products

    (247 results)
  • Co-Researchers

    (5 People)
  •  Giant modulation of the speed of nonlinear quantum phase transitions in strongly correlated materials via chemical bonding force engineering and its application to emergent neuromorphic devicesPrincipal Investigator

    • Principal Investigator
      福地 厚
    • Project Period (FY)
      2023 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Hokkaido University
  •  Proposal of high-performance materials for artificial synapses via atomic-scale observations of resistive switching oxidesPrincipal Investigator

    • Principal Investigator
      Fukuchi Atsushi
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Hokkaido University
  •  Study on ReRAM circuit operation using in-situ TEM for development of artificial neurons

    • Principal Investigator
      Arita Masashi
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido University
  •  Development of purely-electronic resistive switching devices based on field-induced Mott transitionPrincipal Investigator

    • Principal Investigator
      Fukuchi Atsushi
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Book

  • [Book] Memristor and Memristive Neural Networks2018

    • Author(s)
      Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi
    • Total Pages
      314
    • Publisher
      In Tech
    • ISBN
      9789535139485
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Journal Article] Preface2024

    • Author(s)
      Atsushi Tsurumaki-Fukuchi、Takayoshi Katase、Toshio Kamiya
    • Journal Title

      J. Ceram. Soc. Japan

      Volume: 132 Issue: 7 Pages: P7-1-P7-3

    • DOI

      10.2109/jcersj2.132.P7-1

    • ISSN
      1348-6535, 1882-0743
    • Year and Date
      2024-07-01
    • Language
      English
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Journal Article] Significant effects of epitaxial strain on the nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition2023

    • Author(s)
      Tsubaki Keiji、Arita Masashi、Katase Takayoshi、Kamiya Toshio、Tsurumaki-Fukuchi Atsushi、Takahashi Yasuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 63 Issue: 1 Pages: 01SP03-01SP03

    • DOI

      10.35848/1347-4065/acf2a3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Journal Article] Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics2023

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Katase Takayoshi、Ohta Hiromichi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 15 Issue: 13 Pages: 16842-16852

    • DOI

      10.1021/acsami.2c21568

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K03919, KAKENHI-PLANNED-19H05791
  • [Journal Article] Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition2023

    • Author(s)
      Tsubaki Keiji、Tsurumaki‐Fukuchi Atsushi、Katase Takayoshi、Kamiya Toshio、Arita Masashi、Takahashi Yasuo
    • Journal Title

      Advanced Electronic Materials

      Volume: 9 Issue: 6

    • DOI

      10.1002/aelm.202201303

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Journal Article] Initial electrical properties of tantalum oxide resistive memories influenced by oxygen defect concentrations2021

    • Author(s)
      Li Yuanlin、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: SC Pages: SCCE03-SCCE03

    • DOI

      10.35848/1347-4065/abec5e

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Charge-offset stability of single-electron devices based on single-layered Fe nanodot array2021

    • Author(s)
      Gyakushi Takayuki、Asai Yuki、Honjo Shusaku、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      AIP Advances

      Volume: 11 Issue: 3 Pages: 035230-035230

    • DOI

      10.1063/5.0040241

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Nanoscale Probing of Field-Driven Ion Migration in TaO<sub>x </sub> for Neuromorphic Memristor Applications2021

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Katase Takayoshi、Ohta Hiromichi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ECS Transactions

      Volume: 104 Issue: 4 Pages: 93-101

    • DOI

      10.1149/10404.0093ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Filamentary switching of ReRAM investigated by in-situ TEM2020

    • Author(s)
      Arita Masashi、Tsurumaki-Fukuchi Atsushi、Takahashi Yasuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SG0803-SG0803

    • DOI

      10.35848/1347-4065/ab709d

    • NAID

      120007000861

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Initial states and analogue switching behaviors of two major tantalum oxide resistive memories2020

    • Author(s)
      Li Yuanlin、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Morie Takashi、Takahashi Yasuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 4 Pages: 044004-044004

    • DOI

      10.35848/1347-4065/ab8022

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO42020

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Tsubaki Keiji、Katase Takayoshi、Kamiya Toshio、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 12 Issue: 25 Pages: 28368-28374

    • DOI

      10.1021/acsami.0c05181

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Initialization process of Cu-based WOx conductive bridge RAM investigated via in situ transmission electron microscopy2020

    • Author(s)
      Muto Satoshi、Sakai Shinya、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SI Pages: SIIE01-SIIE01

    • DOI

      10.35848/1347-4065/ab79eb

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Periodic Coulomb blockade oscillations observed in single-layered Fe nanodot array2020

    • Author(s)
      Gyakushi Takayuki、Asai Yuki、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      Thin Solid Films

      Volume: 704 Pages: 138012-138012

    • DOI

      10.1016/j.tsf.2020.138012

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Journal Article] Tunnel magnetocapacitance in Fe/MgF2 single nanogranular layered films2020

    • Author(s)
      Msiska Robin、Honjo Shusaku、Asai Yuki、Arita Masashi、Tsurumaki-Fukuchi Atsushi、Takahashi Yasuo、Hoshino Norihisa、Akutagawa Tomoyuki、Kitakami Osamu、Fujioka Masaya、Nishii Junji、Kaiju Hideo
    • Journal Title

      Applied Physics Letters

      Volume: 116 Issue: 8 Pages: 082401-082401

    • DOI

      10.1063/1.5139702

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484, KAKENHI-PROJECT-19K22093, KAKENHI-PROJECT-17H06154, KAKENHI-PROJECT-17H03376, KAKENHI-PROJECT-18H01485, KAKENHI-PROJECT-19H00886, KAKENHI-ORGANIZER-20H05862
  • [Journal Article] Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx2019

    • Author(s)
      Atsushi Tsurumaki-Fukuchi, Yusuke Tsuta, Masashi Arita, and Yasuo Takahashi
    • Journal Title

      Physica Status Solidi (RRL) - Rapid Research Letters

      Volume: 13 Issue: 7 Pages: 1900136-1900136

    • DOI

      10.1002/pssr.201900136

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-19K04484
  • [Journal Article] Characteristics of Si Single-Electron Transistor under Illumination2019

    • Author(s)
      Takahashi Yasuo、Sinohara Michito、Arita Masashi、Tsurumaki-Fukuchi Atsushi、Fujiwara Akira、Ono Yukinori、Nishiguchi Katsuhiko、Inokawa Hiroshi
    • Journal Title

      ECS Transactions

      Volume: 92 Issue: 4 Pages: 47-56

    • DOI

      10.1149/09204.0047ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04484, KAKENHI-PROJECT-18H05258
  • [Journal Article] Double-Gate Single-Electron Transistor Characteristics of Single-Layer Fe-MgF2 Granular Films2018

    • Author(s)
      T. Gyakushi, Y. Asai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Proc. 30th Internat. Microproc. Nanotechnol. Conf.

      Volume: -

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Memristor and Memristive Neural Networks, A. James (Ed.), Chap. 4

      Volume: - Pages: 63-91

    • DOI

      10.5772/intechopen.69024

    • ISBN
      9789535139478, 9789535139485
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, S. Yoneda
    • Journal Title

      Proc. 2018 IEEE 10th International Memory Workshop

      Volume: - Pages: 106-109

    • DOI

      10.1109/imw.2018.8388844

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Multilevel memory characteristics of Ta/Ta2O5-δ ReRAM for the Application of Neural Network2018

    • Author(s)
      Y. Li, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    • Journal Title

      Proc. 18th International Symposium on Advanced Fuluid Information

      Volume: - Pages: 98-99

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性2018

    • Author(s)
      浅井佑基,本庄周作,瘧師貴幸,福地厚,有田正志,高橋庸夫
    • Journal Title

      信学技報

      Volume: 117 (ED2017-104) Pages: 1-6

    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] EELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt2018

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Nakagawa Ryosuke、Arita Masashi、Takahashi Yasuo
    • Journal Title

      MRS Advances

      Volume: - Issue: 33 Pages: 1-6

    • DOI

      10.1557/adv.2018.12

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator2018

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gr&ouml;nroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    • Journal Title

      Proc. 2018 Silicon Nanoelectronics Workshop

      Volume: - Pages: 1-2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Abstract Book of the 7th International Symposium on Transparent on Conductive Materials

      Volume: - Pages: 123-123

    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices2018

    • Author(s)
      A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Extended Abstract of the 2018 Internat. Conf. Sol. Stat. Dev. Materials

      Volume: - Pages: 95-96

    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx2018

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Nakagawa Ryosuke、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 6 Pages: 5609-5617

    • DOI

      10.1021/acsami.7b15384

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] In-situ electron microscopy to investigate resistive RAM operations2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Abst. Collaborative Conference on Materials Research 2018

      Volume: - Pages: 23-24

    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films2018

    • Author(s)
      Asai Yuki、Honjo Shusaku 、Gyakushi Takayuki、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      IEICE Technical Report

      Volume: 117 Pages: 1-6

    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Journal Article] In-situ TEM of Nanoscale ReRAM Devices2018

    • Author(s)
      有田正志,福地厚,高橋庸夫
    • Journal Title

      Vacuum and Surface Science

      Volume: 61 Issue: 12 Pages: 766-771

    • DOI

      10.1380/vss.61.766

    • NAID

      130007528739

    • ISSN
      2433-5835, 2433-5843
    • Year and Date
      2018-12-10
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Analog memory devices for time-domain weighted-sum calculation circuits2018

    • Author(s)
      K. Yamashita, M. Harada, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    • Journal Title

      Proc. 18th International Symposium on Advanced Fuluid Information

      Volume: - Pages: 100-101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Shape change dynamics of Cu filament in double layer CBRAM2018

    • Author(s)
      R. Ishikawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura
    • Journal Title

      Proc. 30th Internat. Microproc. Nanotechnol. Conf.

      Volume: -

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices2017

    • Author(s)
      Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon
    • Journal Title

      Journal of Electroceramics

      Volume: - Issue: 1-4 Pages: 73-93

    • DOI

      10.1007/s10832-017-0069-y

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339, KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-15H01706
  • [Journal Article] Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films2017

    • Author(s)
      Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Proc. 29th Internat. Microproc. Nanotechnol. Conf. (MNC 2017)

      Volume: --

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM2017

    • Author(s)
      M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Ext. Abst. 2017 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM2017)

      Volume: -- Pages: 39-40

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Observation of Conductive Filament in CBRAM at Switching Moment2017

    • Author(s)
      Muto Satoshi、Yonesaka Ryota、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 10 Pages: 895-902

    • DOI

      10.1149/08010.0895ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-16H04339
  • [Journal Article] In-situElectron Microscopy of Cu Movement in MoOx/Al2O3Bilayer CBRAM during Cyclic Switching2017

    • Author(s)
      Ishikawa Ryusuke、Hirata Shuichiro、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo、Kudo Masaki、Matsumura Syo
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 10 Pages: 903-910

    • DOI

      10.1149/08010.0903ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] Associative Search Using Pseudo-Analog Memristors2017

    • Author(s)
      Mika Laiho, Mika Gronroos, Jussi H. Poikonen, Eero Lehtonen, Reon Katsumura, Atsushi T.-Fukuchi, Masashi Arita, and Yasuo Takahashi
    • Journal Title

      IEEE International Symposium on Circuits & Systems (ISCAS-2017)

      Volume: - Pages: 1-4

    • DOI

      10.1109/iscas.2017.8050986

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] (Invited) Evaluation of Coupled Triple Quantum Dots with Compact Device Structure2017

    • Author(s)
      Takahashi Yasuo、Uchida Takafumi、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Fujiwara Akira
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 4 Pages: 173-180

    • DOI

      10.1149/08004.0173ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K18073, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] RRAM Device Operation Investigated using In-situ TEM2017

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Proc. Non-Volatile Memory Technology Symposium 2017 (NVMTS2017)

      Volume: -- Pages: 34-35

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Evaluation of Multilevel Memory Capability of ReRAM Using Ta2O5 Insulator and Different Electrode Materials2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    • Journal Title

      Proc. 2017 Silicon Nanoelectronics Workshop (SNW 2017)

      Volume: -- Pages: 85-86

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM2017

    • Author(s)
      S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Proc. 29th Internat. Microproc. Nanotechnol. Conf. (MNC 2017)

      Volume: --

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    • Journal Title

      Proc. 14th Internat. Conf. Flow Dynamics (ICFD2017)

      Volume: --

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Study on lateral ReRAM by the use of in-situ TEM2016

    • Author(s)
      R. Yonesaka, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Proc. 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

      Volume: - Pages: 790-791

    • DOI

      10.1109/nano.2016.7751428

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Analog memory operated by MOSFET and MoOx Resistive Random Access Memory2016

    • Author(s)
      M. Jo, R. Katsumura, A. T. Fukuchi, M. Arita1, Y. Takahashi1, H. Ando, T. Morie, S. Samukawa
    • Journal Title

      Proc. of 16th Int. Symp. on Advanced Fluid Information (AFI-2016)

      Volume: - Pages: 58-59

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Analog memory characteristics of 1T1R MoOx resistive random access memory2016

    • Author(s)
      M. Jo, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie
    • Journal Title

      Proc. 2016 Silicon Nanoelectronics Workshop (SNW 2016)

      Volume: - Pages: 78-79

    • DOI

      10.1109/snw.2016.7577993

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles2016

    • Author(s)
      M. Arita, Y. Ohno, Y. Murakami, K. Takamizawa, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Nanoscale

      Volume: 8 Issue: 31 Pages: 14754-14766

    • DOI

      10.1039/c6nr02602h

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H04339
  • [Journal Article] Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping2016

    • Author(s)
      T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Issue: 23 Pages: 234502-234502

    • DOI

      10.1063/1.4972197

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15J01747, KAKENHI-PROJECT-16K18073
  • [Journal Article] Spike-based Neural Learning Hardware Using a Resistance Change Memory Device toward Brain-like Systems with Nanostructures2016

    • Author(s)
      H. Ando, K. Tomizaki, T. Tohara, T. Morie, A. T. Fukuchi, M. Arita, Y. Takahashi, and S. Samukawa
    • Journal Title

      Proc. of 16th Int. Symp. on Advanced Fluid Information (AFI-2016)

      Volume: - Pages: 64-65

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Fabrication of single-electron transistor made of Fe-dot film and its characteristics2016

    • Author(s)
      S. Honjo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Journal Title

      Proc. MNC2016

      Volume: -

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Journal Article] Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy2016

    • Author(s)
      M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Journal Title

      Extended Abstract of the 2016 Internat. Conf. Sol. Stat. Dev. Mater.

      Volume: - Pages: 87-88

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 侵入型陽イオン拡散現象を利用した室温転移Ca2RuO4薄膜の作製2024

    • Author(s)
      福地 厚 、片瀬 貴義、神谷 利夫
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] 原子平坦アモルファス TaOx薄膜を用いた電子シナプス素子動作原理の直接観察2024

    • Author(s)
      福地 厚 、片瀬 貴義、太田 裕道
    • Organizer
      日本表面真空学会東北・北海道支部令和5年度学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] Ruddlesden-Popper構造Ca2RuO4薄膜における陽イオンインターカレーション型反応の観測と室温電流誘起相転移の実現2023

    • Author(s)
      福地 厚、片瀬 貴義、神谷 利夫
    • Organizer
      第43回電子材料研究討論会
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] Ca2RuO4薄膜が示す電流誘起転移型の非線形伝導現象に対する基板エピタキシャル応力の影響2023

    • Author(s)
      椿 啓司、福地 厚、有田 正志、片瀬 貴義、神谷 利夫、高橋 庸夫
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] Epitaxial strain engineering of nonlinear transport phenomena in an electrically tunable Mott insulator Ca2RuO42023

    • Author(s)
      Keiji Tsubaki、Atsushi Tsurumaki-Fukuchi、Takayoshi Katase、Toshio Kamiya、Masashi Arita、Yasuo Takahashi
    • Organizer
      The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] Nonthermal Mott Resistive Switching in Ca2RuO4 Thin Films with Independence from the Temperature-Driven Transition Characteristics2023

    • Author(s)
      Atsushi Fukuchi 、Keiji Tsubaki 、Takayoshi Katase、 Toshio Kamiya
    • Organizer
      Advanced Materials Research GRAND MEETING MRM2023/IUMRS-ICA2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03919
  • [Presentation] 金属ナノドットアレイデバイスにおける電気特性のアレイサイズ依存性2022

    • Author(s)
      瘧師 貴幸, 天野 郁馬, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第57回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 金属マルチドット単電子デバイスの電気特性のデバイスサイズ依存性2022

    • Author(s)
      瘧師 貴幸, 天野 郁馬, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Cu系抵抗変化メモリへの電圧印加に伴うCuの移動2022

    • Author(s)
      中島 励, 久保 玲央, 福地 厚, 有田 正志
    • Organizer
      第57回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Cu Movement in MoOx/Al2O3 Double Layer CBRAM Studied by In‐situ TEM2021

    • Author(s)
      M. Arita, R. Ishikawa, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      MEMRISYS 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4薄膜における非線形伝導現象の高速化と不連続転移の観測2021

    • Author(s)
      福地 厚, 椿 啓司, 高橋 庸夫, 片瀬 貴義, 神谷 利夫, 有田 正志
    • Organizer
      日本物理学会2021年秋季大会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] ReRAM スイッチのその場TEM 観察による動作機構解明2021

    • Author(s)
      有田 正志, 福地 厚, 高橋 庸夫
    • Organizer
      日本学術振興会 R025 先進薄膜表面機能創成委員会 第6 回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 熱酸化およびスパッタ製膜SiO2上に形成したFeナノドットアレイの単電子特性2021

    • Author(s)
      天野 郁馬, 瘧師 貴幸, 谷澤 涼太, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Fast and Reliable Resistance Switching in Ca2RuO4 Thin Films Driven by the Current-Induced Phase Transition2021

    • Author(s)
      Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Masashi Arita
    • Organizer
      2021 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Nanoscale Probing of Field-Driven Ion Migration in TaOx for Neuromorphic Memristor Applications2021

    • Author(s)
      A. Tsurumaki-Fukuchi, T. Katase, H. Ohta, M. Arita, Y. Takahashi
    • Organizer
      240th ECS Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 2次元磁気グラニュラーの光インピーダンス特性2021

    • Author(s)
      山内 一弘, 本庄 周作, 浅井 佑基, 有田 正志, 福地 厚, 高橋 庸夫, 海住 英生
    • Organizer
      日本物理学会2021年秋季大会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots2021

    • Author(s)
      Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi
    • Organizer
      2021 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Probe Microscopy Analysis of Neuromorphic Resistive Memory Functions of Amorphous Oxide Semiconductors2021

    • Author(s)
      A. Tsurumaki-Fukuchi, T. Katase, H. Ohta, M. Arita, Y. Takahashi
    • Organizer
      12th International Conference on the Science and Technology for Advanced Ceramics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Current-Driven Metal-Insulator Transition Observed in Epitaxial Thin Films of the Mott Semiconductor Ca2RuO42021

    • Author(s)
      K. Tsubaki, T. Ishida, Y. Takahashi, T. Katase, T. Kamiya, A. Tsurumaki-Fukuchi, M. Arita
    • Organizer
      12th International Conference on the Science and Technology for Advanced Ceramics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 異なるSiO2下地層上に形成したナノドットアレイの電気特性比較2021

    • Author(s)
      谷澤 涼太, 天野 郁馬, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Pristine Characteristics of Ta-O Resistive Memories Stacked with Various Scavenging Electrodes2021

    • Author(s)
      M. Arita, Y. Li, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      12th International Conference on the Science and Technology for Advanced Ceramics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 二層型MoOx/Al2O3 CBRAM中のCu移動のTEMその場観察2021

    • Author(s)
      有田 正志, 石川 竜介, 福地 厚, 高橋 庸夫
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaOx for Neuromorphic Computing2021

    • Author(s)
      Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, Yasuo Takahashi
    • Organizer
      Material Research Meeting 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] In Situ TEM of Unipolar‐Like CBRAM Operation2021

    • Author(s)
      S. Muto, N. Fujita, T. Nakajima, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      MEMRISYS 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 単層Feナノドットアレイ単電子デバイスのオフセットチャージ安定性2021

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 本庄 周作, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4薄膜における電流誘起抵抗転移のRu欠損量依存性2021

    • Author(s)
      福地 厚, 椿 啓司, 石田 典輝, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Charge-Offset Stability of Fe Nanodot Device Embedded in an Insulating MgF22021

    • Author(s)
      T. Gyakushi, Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      12th International Conference on the Science and Technology for Advanced Ceramics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Two-Step Current-Induced Transition in Ca2RuO4 Thin Films Observed in the Time-Resolved Resistive Switching Characteristics2021

    • Author(s)
      Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Masashi Arita
    • Organizer
      Material Research Meeting 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Solid-Phase Epitaxial Growth of Ca2RuO4 Thin Films with Current-Induced Metal-Insulator Transition2021

    • Author(s)
      Keiji Tsubaki, Tenki Ishida, Yasuo Takahashi, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, and Masashi Arita
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Feナノドットアレイの電気伝導特性の下地層依存性2021

    • Author(s)
      谷澤 涼太, 天野 郁馬, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第56回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4エピタキシャル薄膜における電流誘起非線形伝導現象の高速化2021

    • Author(s)
      椿 啓司, 福地 厚, 高橋 庸夫, 片瀬 貴義, 神谷 利夫, 有田 正志
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 原子平坦アモルファス薄膜を用いたTaOxのアナログメモリ動作過程の直接観察2021

    • Author(s)
      福地 厚, 片瀬 貴義, 太田 裕道, 有田 正志, 高橋 庸夫
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Feナノドットアレイの電気伝導特性の下地層依存2020

    • Author(s)
      天野 郁馬, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Double-Gate Single-Electron Devices Formed by Single-Layered Fe Nanodot Array2020

    • Author(s)
      T. Gyakushi, Y. Asai, B. Byun, I. Amano, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      2020 Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4薄膜における電流/電場誘起金属絶縁体転移の観測2020

    • Author(s)
      福地 厚, 椿 啓司, 石田 典輝, 有田 正志, 片瀬 貴義, 神谷 利夫, 高橋 庸夫
    • Organizer
      日本物理学会第75回年次大会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Failure and Recovery of Double-Layer CBRAM Studied by In-Situ TEM2020

    • Author(s)
      S. Muto, T. Nakajima, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      2020 International Conference on Solid State Devices and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Combinations of Electrode and Intrinsic Oxygen Vacancy Concentration for Resistive Switching in Tantalum Oxide2020

    • Author(s)
      Y. Li, A. Tsurumaki-Fukuchi, M. Arita and Y. Takahashi
    • Organizer
      The 33rd International Microprocesses and Nanotechnology Conference (MNC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 電流誘起型金属絶縁体転移物質Ca2RuO4薄膜が示す高い安定性を持った抵抗スイッチング動作2020

    • Author(s)
      椿 啓司, 石田 典輝, 福地 厚, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 絶縁層へのCu導入がCBRAMに与える影響のTEM内評価2020

    • Author(s)
      武藤 恵, 中島 励, 藤田 順, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] ゲート電圧とSetパルス電圧により制御したMOSFET付TaOx系ReRAMのアナログ動作2020

    • Author(s)
      木村 大志, 李 遠霖, 福地 厚, 有田 正志, 遠藤 和彦, 森江 隆, 高橋 庸夫
    • Organizer
      第55回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] SiO2上のFeナノドットアレイの電気伝導特性の表面依存2020

    • Author(s)
      天野 郁馬, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第55回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] In-situ TEM観察に向けた平面型CBRAMの微小ギャップの制御2020

    • Author(s)
      藤田 順, 武藤 恵, 中島 励, 福地 厚, 有田 正志, 高橋 康夫
    • Organizer
      第55回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4エピタキシャル薄膜が示す電流誘起絶縁体-金属転移とその抵抗変化特性2020

    • Author(s)
      福地 厚, 椿 啓司, 石田 典輝, 片瀬 貴義, 神谷 利夫, 高橋 庸夫, 有田 正志
    • Organizer
      第40 回電子材料研究討論会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Dependence of Transport Characteristics of Fe Nanodot Array on the Underlayer Surface2020

    • Author(s)
      I. Amano, T. Gyakushi, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      The 33rd International Microprocesses and Nanotechnology Conference (MNC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] マルチドット単電子デバイスにおけるドットの三次元構造によるゲート容量の不均一化2020

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 卞 範模, 天野 郁馬, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] デジタル型/アナログ型抵抗変化特性を示すCBRAMのその場構造解析2020

    • Author(s)
      武藤 恵, 中島 励, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Feナノドットアレイを用いたダブルゲート単電子デバイスの作製と評価2020

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 卞 範模, 天野 郁馬, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] VCMとECMに基づいたTa2O5-δ抵抗変化型メモリの初期特性と多値動作2020

    • Author(s)
      李 遠霖, 福地 厚, 有田 正志, 高橋 庸夫, 森江 隆
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ca2RuO4エピタキシャル薄膜における非線形伝導現象2020

    • Author(s)
      福地 厚, 椿 啓司, 石田 典輝, 高橋 庸夫, 片瀬 貴義, 神谷 利夫, 有田 正志
    • Organizer
      日本物理学会 2020年秋季大会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ta2O5ReRAMデバイスのパルスによる多値動作のばらつき評価2020

    • Author(s)
      有馬 克紀, 李 遠霖, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第55回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Current-Induced Insulator-to-Metal Transition of Ca2RuO4 Thin Films Observed in Local Electrical Measurements2020

    • Author(s)
      K. Tsubaki, T. Ishida, Y. Takahashi, T. Katase, T. Kamiya, A. Tsurumaki-Fukuchi, and M. Arita
    • Organizer
      The 33rd International Microprocesses and Nanotechnology Conference (MNC2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 電流誘起金属絶縁体転移を示すCa2RuO4薄膜の電流-電圧特性の評価2020

    • Author(s)
      椿 啓司, 福地 厚, 石田 典輝, 有田 正志, 片瀬 貴義, 神谷 利夫, 高橋 庸夫
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Characteristics of Si Single-Electron Transistor under Illumination2019

    • Author(s)
      Y. Takahashi, M. Sinohara, M. Arita, A. Tsurumaki-Fukuchi, A. Fujiwara, Y. Ono, K. Nishiguchi, and H. Inokawa
    • Organizer
      The 236th ECS Meeting 2019年10月16日
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Operation analysis of resistive switching of CBRAM using in-situ TEM2019

    • Author(s)
      Y. Takahashi, A. Tsurumaki-Fukuchi, and M. Arita
    • Organizer
      2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 7)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Ag/WOx/Pt平面型CBRAMにおける金属イオン移動のTEMその場観察2019

    • Author(s)
      酒井 慎弥, 武藤 恵, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 抵抗変化メモリデバイスのナノスケールTEMその場解析2019

    • Author(s)
      有田 正志, 福地 厚, 高橋 庸夫
    • Organizer
      日本セラミックス協会東北北海道支部 第 27 回北海道地区セミナー
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] In-situ TEM of CBRAM at Initial Decrease in Resistance2019

    • Author(s)
      S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      The 6th International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC6)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 単層FeMgF2グラニュー単電子トンジスタにおける等周期クーロン振動の解析2019

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Systematic Control of Current Transport in Metal/Oxide Schottky Junctions Using Highly Uniform Layers of TaOx2019

    • Author(s)
      Atsushi FUKUCHI, Yusuke TSUTA, Masashi ARITA, and Yasuo TAKAHASHI
    • Organizer
      Materials Research Meeting 2019 (MRM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 低電流動作時のCu/MoOx/Al2O3 CBRAMにおけるCu-CFの観察2019

    • Author(s)
      石川 竜介, 有馬 克紀, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 界面エンジニアリング効果によるPt/Nb:SrTiO3接合の伝導特性の制御2019

    • Author(s)
      蔦佑輔,福地厚,有田正志,高橋庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Experimental and Theoretical Study on Tunnel Magnetocapacitance in Fe/MgF2 Nanogranular Films2019

    • Author(s)
      Robin MSISKA, Shusaku HONJO, Yuki ASAI, Masashi ARITA, Atsushi TSURUMAKI-FUKUCHI, Yasuo TAKAHASHI, Norihisa HOSHINO, Tomoyuki AKUTAGAWA, Osamu KITAKAMI, Masaya FUJIOKA, Junji NISHII, and Hideo KAIJU
    • Organizer
      The 6th Japan-Korea International Symposium on Materials Science and Technology 2019 (JKMST2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Failure and Recovery of Double-Layer CBRAM Studied by In-Situ TEM2019

    • Author(s)
      M. Arita, R. Ishikawa, K. Arima, A. Tsurumaki-Fukuchi, Y. Takahashi, M. Kudo, and S. Matsumura
    • Organizer
      2019 International Conference on Solid State Devices and Materials (SSDM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 電子デバイス評価のためのin-situ TEM試料の 作製と評価2019

    • Author(s)
      有馬 克紀, 石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      日本顕微鏡学会第75回学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] CBRAMのフォーミング過程におけるTEMその場観察2019

    • Author(s)
      武藤 恵, 酒井 慎弥, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 40nm CMOS技術により作製したTa-O系抵抗変化メモリにおける導電フィラメント周辺の酸素分布2019

    • Author(s)
      有田 正志, 福地 厚, 高橋 庸夫, 村岡俊作, 伊藤 理, 米田 慎一
    • Organizer
      電子情報通信学会 集積回路研究会(ICD)
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Observation of field-Induced resistive phase transition in Ca2RuO4 thin films2019

    • Author(s)
      Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, and Yasuo Takahashi
    • Organizer
      The 26th International Workshop on Oxide Electronics (iWOE26)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 高抵抗動作を目指したCu上部電極型Ta2O5-d抵抗変化多値メモリ2019

    • Author(s)
      李 遠霖, 福地 厚, 有田 正志, 高橋 庸夫, 森江 隆
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 単層FeMgF2グラニュー単電子トンジスタにおける等周期クロ振動の解析2019

    • Author(s)
      瘧師貴幸,浅井佑基,福地厚,有田正志,高橋庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 低電流動作時のCu/MoOx/Al2O3 CBRAMにおけるCu-CFの観察2019

    • Author(s)
      石川竜介,有馬克紀,福地厚,有田正志,高橋庸夫,工藤昌輝,松村晶
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Ag/WOx/Pt平面型CBRAMにおける金属イオン移動のTEMその場観察2019

    • Author(s)
      酒井慎弥,武藤恵,福地厚,有田正志,高橋庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜単電子トランジスタにおける等周期クーロン振動特性の解析2019

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] CBRAMのフォーミング過程におけるTEMその場観察2019

    • Author(s)
      武藤恵,酒井慎弥,福地厚,有田正志,高橋庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 高抵抗動作を目指したCu上部電極型Ta2O5-δ抵抗変化多値メモリ2019

    • Author(s)
      李遠霖,福地厚,有田正志,高橋庸夫,森江隆
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ TEM observation of Cu-WOX CBRAM during gradual resistance decrease for the initialization2019

    • Author(s)
      Satoshi Muto, Shinya Sakai, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi
    • Organizer
      The 32nd International Microprocesses and Nanotechnology Conference (MNC2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Switching Current of Ta2O5 Based Resistive Analog Memories2019

    • Author(s)
      Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, and Takashi Morie
    • Organizer
      2019 Silicon Nanoelectronics Workshop (SNW-2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] AI 応用を念頭においた抵抗変化メモリ動作の TEM その場観察2019

    • Author(s)
      工藤 昌輝, 松村 晶, 宮崎 宣幸, 遠堂 敬史, 大多 亮, 有田 正志, 福地 厚, 高橋 庸夫
    • Organizer
      2019年度微細構造解析プラットフォームシンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Fast and uniform interface reactions of tantalum oxide and their applications into memory devices2019

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      The 2019 Collaborative Conference on Materials Research (CCMR2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] CuとTaを上部電極に用いたTa2O5-δ多値抵抗変化メモリの特性評価2019

    • Author(s)
      李 遠霖, 福地 厚, 有田 正志, 森江 隆, 高橋庸夫
    • Organizer
      電子情報通信学会電子デバイス研究
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Metal-Insulator Transition in Ca2RuO4 Thin Films with a High Sensitivity to Electrical Stimuli2019

    • Author(s)
      Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, and Yasuo Takahashi
    • Organizer
      The 3rd Workshop on Functional Materials Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Double-gate Single-electron Transistor Formed by Fe Nanodot Array2019

    • Author(s)
      T. Gyakushi, Y. Asai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, and S. Samukawa
    • Organizer
      The 16th International Conference on Flow Dynamics (ICFD2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Fast and uniform interface reactions of tantalum oxide and their applications into memory devices2019

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 2019 Collaborative Conference on Materials Research (CCMR2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Investigation of LSI Architecture and Analog Memory Devices for Brain-like Systems2019

    • Author(s)
      K. Yamashita, M. Harada, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, and S. Samukawa
    • Organizer
      The 16th International Conference on Flow Dynamics (ICFD2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 固相エピタキシャル成長Ca2RuO4薄膜における電流依存金属絶縁体転移の観測2019

    • Author(s)
      椿 啓司, 福地 厚, 片瀬 貴義, 神谷 利夫, 有田 正志, 高橋 庸夫
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process2019

    • Author(s)
      M. Arita, A. T.-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, and S. Yoneda
    • Organizer
      2019 International Conference on Solid State Devices and Materials (SSDM2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜単電子トランジスタにおける等周期クーロン振動特性の解析2019

    • Author(s)
      瘧師貴幸,浅井佑基,福地厚,有田正志,高橋庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Nanoscale filaments in Ta-O resistive RAM bit array: microscopy analysis and switching property2019

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, S. Muraoka, S. Ito, S. Yoneda
    • Organizer
      2019 IEEE 11th International Memory Workshop (IMW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04484
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの多値特性2018

    • Author(s)
      福本 泰士,有田 正志,福地 厚,高橋 庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Cu上部電極を用いたTa2O5-d 抵抗変化型多値メモリ特性の実現2018

    • Author(s)
      李 遠霖, 勝村 玲音, M. Gr&ouml;nroos, 福地 厚, 有田 正志, 高橋 庸夫, 安藤 秀幸, 森江 隆
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] In-situ TEM investigation on instability of ReRAM switching2018

    • Author(s)
      S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      EMRS 2018 Spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Cu/MoOx/Al2O3 CBRAMの微小領域におけるフィラメント形状観察2018

    • Author(s)
      石川竜介,福地厚,有田 正志,高橋庸夫,工藤昌輝,松村晶
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 電流測定TEMその場観察に向けた電極作製2018

    • Author(s)
      石川竜介,有馬克紀,福地厚,有田正志,高橋庸夫,工藤昌輝,松村晶
    • Organizer
      日本顕微鏡学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, and S. Yoneda
    • Organizer
      2018 IEEE 10th International Memory Workshop (IMW 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性2018

    • Author(s)
      浅井佑基,本庄周作,瘧師貴幸,福地厚,有田正志,高橋庸夫
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Cu上部電極を用いたTa2O5-δ抵抗変化型多値メモリ特性の実現2018

    • Author(s)
      李遠霖,勝村玲音,Mika Gronroos,福地厚,有田正志,高橋庸夫,安藤秀幸,森江隆
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      7th International Symposium on Transparent on Conductive Materials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの多値特性2018

    • Author(s)
      福本 泰士、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Observations on the interfacial redox reactions in metal-oxide memristive devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      EMN Meeting on Titanium-Oxides
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Analog memory devices for time-domain weighted-sum calculation circuits2018

    • Author(s)
      K. Yamashita, M. Harada, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    • Organizer
      the 15th International Conference on Flow Dynamics (ICFD2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Study on interfacial redox reactions of tantalum as a good scavenger material in ReRAM devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 2018 International Conference on Solid State Devices and Materials (SSDM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 酸素欠陥を導入したTa2O5-δ抵抗変化型多値メモリ特性の検討2018

    • Author(s)
      李 遠霖、勝村 玲音、Mika Gronroos、福地 厚、有田 正志、高橋 庸夫、安藤 秀幸、森江 隆
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 固相エピタキシャル成長法による金属性Ca2RuO4薄膜の作製2018

    • Author(s)
      安田 将太、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] CBRAMの動作不安定性に関するTEMその場観察2018

    • Author(s)
      武藤恵,酒井慎弥,福地厚,有田正志,高橋庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ダブルゲートFe-MgF2単電子トランジスタの作製と評価2018

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Multilevel memory characteristics of Ta/Ta2O5-δ ReRAM for the application of neural network2018

    • Author(s)
      Y. Li, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    • Organizer
      15th International Conference on Flow Dynamics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 単層Fe-MgF2 グラニュラー薄膜を用いた単電子トランジスタの特性評価2018

    • Author(s)
      浅井 佑基, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] TaOx界面層を用いたPt/Nb:SrTiO3接合の伝導特性制2018

    • Author(s)
      蔦佑輔, 福地厚, 有田正志, 高橋庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ electron microscopy to investigate resistive RAM operations2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      Collaborative Conference on Materials Research
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] CBRAMの動作不安定性に関するTEMその場観察2018

    • Author(s)
      武藤 恵、酒井 慎弥、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Shape change dynamics of Cu filament in double layer CBRAM2018

    • Author(s)
      R. Ishikawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura
    • Organizer
      30th Internat. Microprocesses and Nanotechno. Conf.
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] TaOx界面層を用いたPt/Nb:SrTiO3接合の伝導特性制御2018

    • Author(s)
      蔦 佑輔, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Study on tunnel magnetocapacitance in Fe/MgF2 Nanogranular films2018

    • Author(s)
      R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, and H. Kaiju
    • Organizer
      第4回マテリアルズ・インフォマティクス基礎研究会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices2018

    • Author(s)
      A. Tsurumaki‐Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      2018 Internat. Conf. Sol. Stat. Dev. Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 7th International Symposium on Transparent on Conductive Materials (TCM2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Double-Gate Single-Electron Transistor Characteristics of Single-Layer Fe-MgF2 Granular Films2018

    • Author(s)
      T. Gyakushi, Y. Asai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      30th Internat. Microprocesses and Nanotechno. Conf.
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ TEM investigation on instability of ReRAM switching2018

    • Author(s)
      S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      EMRS 2018 Spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Analog memory devices for time-domain weighted-sum calculation circuits2018

    • Author(s)
      K. Yamashita, M. Harada, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    • Organizer
      15th International Conference on Flow Dynamics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Multilevel memory characteristics of Ta/Ta2O5-d ReRAM for the application of neural network2018

    • Author(s)
      Y. Li, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie, and S. Samukawa
    • Organizer
      the 15th International Conference on Flow Dynamics (ICFD2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Shape change dynamics of Cu filament in double layer CBRAM2018

    • Author(s)
      R. Ishikawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, and S. Matsumura
    • Organizer
      the 31st International Microprocesses and Nanotechnology Conference (MNC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, S. Yoneda
    • Organizer
      2018 IEEE 10th International Memory Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 固相エピタキシャル成長法による常圧成長Ca2RuO4薄膜の伝導特性2018

    • Author(s)
      安田将太,福地厚,有田正志,高橋庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 固相エピタキシャル成長法による常圧成長Ca2RuO4薄膜の伝導特性2018

    • Author(s)
      安田 将太、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] In-situ electron microscopy to investigate resistive RAM operations2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, and Y. Takahashi
    • Organizer
      the 2018 Collaborative Conference on Materials Research (CCMR2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 電流経路TEM観察のための簡易型EBACシステムの試作2018

    • Author(s)
      藤田 順, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      日本顕微鏡学会第74回学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 酸素欠陥を導入したTa2O5-δ抵抗変化型多値メモリ特性の検討2018

    • Author(s)
      李遠霖,勝村玲音,Mika Gronroos,福地厚,有田正志,高橋庸夫,安藤秀幸,森江隆
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Double-gate single-electron transistor characteristics of single-layer Fe-MgF2 granular films2018

    • Author(s)
      T. Gyakushi, Y. Asai, A. Tsurumaki-Fukuchi, M. Arita and Y. Takahashi
    • Organizer
      the 31st International Microprocesses and Nanotechnology Conference (MNC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Investigation for Multilevel Memory Capability of ReRAM using Ta2O5-δ Insulator2018

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gr&ouml;nroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    • Organizer
      2018 Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性2018

    • Author(s)
      浅井 佑基、本庄 周作、瘧師 貴幸、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Observations on the interfacial redox reactions in metal-oxide memristive devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      EMN Meeting on Titanium-Oxides
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Cu/MoOx/Al2O3 CBRAMの微小領域におけるフィラメント形状観察2018

    • Author(s)
      石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 固相エピタキシャル成長法による金属性Ca2RuO4薄膜の作製2018

    • Author(s)
      安田将太,福地厚,有田正志,高橋庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Investigation for multilevel memory vapability of ReRAM using Ta2O5-d insulator2018

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gr&ouml;nroos, A. Tsurumaki-Fukuchi, M. Arita, H. Ando, T. Morie, and Y. Takahashi
    • Organizer
      2018 Silicon Nanoelectronics Workshop (SNW2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Tunnel Magnetocapacitance in Single-layered Fe/MgF2 Granular Films2018

    • Author(s)
      R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, and H. Kaiju
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 電流経路TEM観察のための簡易型EBACシステムの試作2018

    • Author(s)
      藤田順,福地厚,有田正志,高橋庸夫
    • Organizer
      日本顕微鏡学会 第74回学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 金属/酸化物接合における界面金属層による酸素欠陥生成効果の評価2017

    • Author(s)
      中川 良祐、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] In-Situ Electron Microscopy of Cu Movement in MoOx/Al2O3 Bilayer CBRAM during Cyclic Switching Process2017

    • Author(s)
      R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura
    • Organizer
      232nd ECS Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 異なる上部電極を有するTa2O5抵抗変化型メモリの多値特性評価2017

    • Author(s)
      勝村 玲音,李 遠霖,Mika Gronroos,福地 厚,有田 正志,高橋 庸夫,安藤 秀幸,森江 隆
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-Situ Electron Microscopy of Cu Movement in MoOx/Al2O3 Bilayer CBRAM during Cyclic Switching Process2017

    • Author(s)
      R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, and S. Matsumura
    • Organizer
      the 232nd ECS Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, and T. Morie
    • Organizer
      the 14th International Conference on Flow Dynamics (ICFD2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi, S. Samukawa
    • Organizer
      14th Internat. Conf. Flow Dynamics (ICFD2016)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Evaluation of Multilevel Memory Capability of ReRAM Using Ta2O5 Insulator and Different Electrode Materials2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Andoh, T. Morie, Y. Takahashi
    • Organizer
      2017 Silicon Nanoel. Workshop (SNW-2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Evaluation of Multilevel Memory Capability of ReRAM Using Ta2O52017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gr&ouml;nroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Ando, T. Morie, and Y. Takahashi
    • Organizer
      Silicon Nanoelectronics Workshop 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの電気特性評価2017

    • Author(s)
      福本 泰士, 勝村 玲音, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films2017

    • Author(s)
      Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      29th Internat. Microproc. Nanotechnol. Conf. (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 多並列接続Cu-MoOx-Al抵抗変化型メモリのアナログメモリ動作2017

    • Author(s)
      原田 將敬,安藤 秀幸,森江 隆,勝村 玲音,福地 厚,有田 正志,高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ナノギャップ型抵抗変化メモリにおけるギャップ間金属移動の動的観察2017

    • Author(s)
      武藤 恵、酒井 慎弥、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      平成29年度日本顕微鏡学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films2017

    • Author(s)
      Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM2017

    • Author(s)
      M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, Y. Takahashi
    • Organizer
      2017 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Observation of Conductive Filament in CBRAM at Switching Moment2017

    • Author(s)
      S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      232nd ECS Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM2017

    • Author(s)
      M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, and Y. Takahashi
    • Organizer
      2017 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Observation of Conductive Filament in CBRAM at Switching Moment2017

    • Author(s)
      S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 232nd ECS Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Evaluation of Coupled Triple Quantum Dots with Compact Device Structure2017

    • Author(s)
      Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, and A. Fujiwara
    • Organizer
      the 232nd ECS Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Ag/WOx/Pt平面型抵抗変化メモリのTEMその場観察2017

    • Author(s)
      酒井慎弥,武藤恵,福地厚,有田正志,高橋庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 超平坦a-TaOx薄膜を用いた抵抗変化メモリ動作における導電性フィラメントの直接観察2017

    • Author(s)
      福地 厚,有田 正志,片瀬 貴義,太田 裕道,高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ナノスケールReRAM/CBRAMデバイスのIn-situ TEM解析2017

    • Author(s)
      高橋 庸夫、福地 厚、有田 正志
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM2017

    • Author(s)
      S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      29th Internat. Microproc. Nanotechnol. Conf. (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ナノスケールReRAM/CBRAMデバイスのIn-situ TEM解析2017

    • Author(s)
      高橋庸夫,福地厚,有田正志
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 金属/酸化物接合における界面金属層による酸素欠陥生成効果の評価2017

    • Author(s)
      中川良祐,福地厚,有田正志,高橋庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Investigations on Oxygen Scavenging Effect at Metal/Oxide Interfaces for Reliable Memory Applications2017

    • Author(s)
      R. Nakagawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      2017 MRS Fall Meeting & Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Microstructural Evolution during Switching Operation of Resistive RAM2017

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      BIT's 5th Annual Conference of AnalytiX
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Year and Date
      2017-03-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] RRAM Device Operation Investigated using In-situ TEM2017

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      Non-Volatile Memory Technol. Symp. 2017 (NVMTS2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Investigations on Oxygen Scavenging Effect at Metal/Oxide Interfaces for Reliable Memory Applications2017

    • Author(s)
      R. Nakagawa, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      2017 MRS Fall Meeting & Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] ナノギャップ型抵抗変化メモリにおけるギャップ間金属移動の動的観察2017

    • Author(s)
      武藤恵,酒井慎弥,福地厚,有田正志,高橋庸夫
    • Organizer
      日本顕微鏡学会北海道支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの電気特性評価2017

    • Author(s)
      福本 泰士,勝村 玲音,福地 厚,有田 正志,高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM2017

    • Author(s)
      S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Fe-絶縁体グラニュラーデバイスの電気特性2017

    • Author(s)
      有田正志,福地厚,高橋庸夫
    • Organizer
      電子工学研究所共同研究プロジェクト研究会
    • Place of Presentation
      静岡大学,浜松
    • Year and Date
      2017-03-03
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Ag/WOx/Pt平面型抵抗変化メモリのTEMその場観察2017

    • Author(s)
      酒井 慎弥、武藤 恵、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] RRAM Device Operation Investigated using In-situ TEM2017

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, and Y. Takahashi
    • Organizer
      Non-Volatile Memory Technology Symposium 2017 (NVMTS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] MoOx/Al2O3CBRAMの繰返しスイッチ過程におけるCu移動の直接観察2017

    • Author(s)
      平田 周一郎, 石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Fe-MgF2グラニュラー膜における単電子トランジスタ特性の評価2017

    • Author(s)
      浅井 佑基、本庄 周作、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Fe-MgF2グラニュラー膜における単電子トランジスタ特性の評価2017

    • Author(s)
      浅井佑基,本庄周作,福地,有田正志,高橋庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ TEM法によるMoOx/Al2O3 抵抗変化メモリのデバイス劣化観察2017

    • Author(s)
      石川竜介,平田周一郎,福地厚,有田正志,高橋庸夫
    • Organizer
      日本顕微鏡学会 第73回学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] MoOx/Al2O3 CBRAMの繰返しスイッチ過程におけるCu移動の直接観察2017

    • Author(s)
      平田 周一郎,石川 竜介,福地 厚,有田 正志,高橋 庸夫,工藤 昌輝,松村 晶
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Evaluation of Coupled Triple Quantum Dots with Compact Device Structure2017

    • Author(s)
      Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara
    • Organizer
      232nd ECS Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] In-situ TEM法によるMoOx/Al2O3 抵抗変化メモリのデバイス劣化観察2017

    • Author(s)
      石川 竜介、平田 周一郎、福地 厚、 有田 正志、高橋 庸夫
    • Organizer
      第73回日本顕微鏡学会学術講演会
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 反応性スパッタ法により作製したTiOx 薄膜の電気特性評価2017

    • Author(s)
      福本 泰士,有田 正志,福地 厚,高橋 庸夫
    • Organizer
      第52回応用物理学会北海道支部学術講演会
    • Place of Presentation
      北見工大,北見
    • Year and Date
      2017-01-07
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 超平坦a-TaOx薄膜を用いた抵抗変化メモリ動作における導電性フィラメントの直接観察2017

    • Author(s)
      福地 厚, 有田 正志, 片瀬 貴義, 太田 裕道, 高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] 次世代半導体メモリ実現に向けたTEMその場観察を用いた故障メカニズム解析法の確立2017

    • Author(s)
      工藤昌輝,松村晶,宮崎宣幸,遠堂敬史,大多亮,有田正志,福地厚,高橋庸夫
    • Organizer
      日本顕微鏡学会 第73回学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Associative Search Using Pseudo-Analog Memristors2017

    • Author(s)
      M. Laiho, M. Gronroos, J. H. Poikonen, E. Lehtonen , R. Katsumura, A. T.-Fukuchi, M. Arita, Y. Takahashii
    • Organizer
      2017 IEEE Internat. Symp. Circuits & Systems (ISCAS-2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 酸素欠陥導入層を用いた抵抗変化メモリにおける界面反応過程の評価2017

    • Author(s)
      中川 良祐,福地 厚,有田 正志,高橋 庸夫
    • Organizer
      第52回応用物理学会北海道支部学術講演会
    • Place of Presentation
      北見工大,北見
    • Year and Date
      2017-01-07
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Conductive filament in CBRAM having double insulator layer of MoOx/Al2O3 investigated by in-situ TEM2016

    • Author(s)
      S. Hirata, A. Takahashi, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      EMRS 2016 Spring Meeting
    • Place of Presentation
      Lille Grand Palais, Lille, France
    • Year and Date
      2016-05-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Ta/Ta2O5抵抗変化型メモリの多値・アナログメモリ動作の検討2016

    • Author(s)
      勝村玲音,Mika Gronroos,福地厚,有田正志,高橋庸夫,安藤秀幸,森江隆
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Study on lateral ReRAM by the use of in-situ TEM2016

    • Author(s)
      R. Yonesaka, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi
    • Organizer
      16th Internat. Conf. Nanotechnol. (IEEE Nano)
    • Place of Presentation
      Sendai International Center, Sendai
    • Year and Date
      2016-08-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Cu/WOx平面型抵抗変化メモリのTEMその場観察2016

    • Author(s)
      武藤恵,米坂瞭太,福地厚,有田正志,髙橋庸夫
    • Organizer
      日本顕微鏡学会 第72回学術講演会
    • Place of Presentation
      仙台国際センター,仙台
    • Year and Date
      2016-06-15
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] MoOx/Al2O3抵抗変化型メモリの導電フィラメントと抵抗変化のTEMその場観察2016

    • Author(s)
      平田周一郎,高橋謙仁,福地厚,有田正志,髙橋庸夫
    • Organizer
      日本顕微鏡学会 第72回学術講演会
    • Place of Presentation
      仙台国際センター,仙台
    • Year and Date
      2016-06-15
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Spike-Based Neural Learning Hardware Using a Resistance Change Memory Device Toward Brain-Like Systems with Nanostructures2016

    • Author(s)
      H. Ando, K. Tomizaki, T. Tohara, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    • Organizer
      13th International Conference on Flow Dynamics (ICFD2016)
    • Place of Presentation
      Sendai International Center, Sendai
    • Year and Date
      2016-10-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Analog memory characteristics of resistance random access memories,2016

    • Author(s)
      M. Jo, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Andoh, T. Morie
    • Organizer
      EMRS 2016 Spring Meeting
    • Place of Presentation
      Lille Grand Palais, Lille, France
    • Year and Date
      2016-05-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Analog memory characteristics of 1T1R MoOx resistive random access memory2016

    • Author(s)
      M. Jo, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie
    • Organizer
      2016 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI, USA
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy2016

    • Author(s)
      M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Internat. Cong. Center, Tsukuba
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy2016

    • Author(s)
      M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      2016 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM)
    • Place of Presentation
      Tsukuba Internat. Cong. Center, Tsukuba
    • Year and Date
      2016-09-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Ananlog Memory Operated by MOSFET and MoOx Resistive Random Access Memory2016

    • Author(s)
      M. Jo, R. Katsumura, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie, S. Samukawa
    • Organizer
      13th International Conference on Flow Dynamics (ICFD2016)
    • Place of Presentation
      Sendai International Center, Sendai
    • Year and Date
      2016-10-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] ナノドットアレイデバイスのためのアナログメモリ素子制御の検討2016

    • Author(s)
      曹民圭,勝村玲音,福地厚,有田正志,高橋庸夫,安藤秀幸,森江隆
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] Investigation of resistive switching memory effect in a-TaOx films with atomically flat surface2016

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, T. Katase, H. Ohta
    • Organizer
      24th International Colloquium on Scanning Probe Microscopy
    • Place of Presentation
      Hawaii Convention Center, Honolulu, HI, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K18073
  • [Presentation] Investigation of resistive switching memory effect in a-TaOx films with atomically flat surface2016

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, T. Katase, H. Ohta, Y. Takahashi
    • Organizer
      24th International Colloquium on Scanning Probe Microscopy
    • Place of Presentation
      Hawaii Convention Center, Honolulu, HI, USA
    • Year and Date
      2016-12-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 高均一TaOx薄膜を用いた抵抗変化動作の局所的評価2016

    • Author(s)
      福地厚,有田正志,片瀬貴義,太田 裕道,高橋 庸夫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 抵抗変化型メモリ素子を用いたスパイクタイミングによるニューラル学習回路2016

    • Author(s)
      安藤 秀幸, 富崎 和正, 森江 隆, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      電気学会 電子・情報・システム部門大会
    • Place of Presentation
      神戸大,神戸
    • Year and Date
      2016-09-02
    • Data Source
      KAKENHI-PROJECT-16H04339
  • [Presentation] 高均一TaOx薄膜を用いた抵抗変化動作の局所的評価2016

    • Author(s)
      福地 厚, 有田 正志, 片瀬 貴義, 太田 裕道, 高橋 庸夫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Data Source
      KAKENHI-PROJECT-16K18073
  • 1.  Arita Masashi (20222755)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 171 results
  • 2.  高橋 庸夫 (90374610)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 172 results
  • 3.  MUTO Satoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 12 results
  • 4.  ISHIKAWA Ryusuke
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 10 results
  • 5.  OHNO Takeo
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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