Okuda Takafumi 奥田貴史

Researcher Number	00783036
Other IDs
Affiliation (based on the past Project Information) *help	2016 – 2019: 京都大学, 工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment
Keywords	Principal Investigator 回路シミュレーション / デバイスモデリング / 高周波動作 / 電力変換回路 / パワープロセッシング / 炭化珪素トランジスタ / パワーエレクトロニクス / 高周波電力変換回路 / 寄生インダクタンス / 駆動回路 … More / デバイスモデル / SiCデバイス / SiC / スイッチング特性 / ベース駆動回路 / バイポーラトランジスタ / 炭化珪素 Less

Research Projects
(2 results)
Research Products
(25 results)

炭化珪素デバイスの高速スイッチング特性に注目したMHz級高周波電力変換器Principal Investigator
- Principal Investigator
  
  奥田貴史
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kyoto University
Device modeling of SiC bipolar junction transistors and fabrication of high-frequency power convertersPrincipal Investigator
- Principal Investigator
  
  Okuda Takafumi
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyoto University

All 2020 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Measurement of internal magnetic flux density distribution in air-core toroidal transformer under high-frequency excitation2020
- Author(s)
  K. Hashimoto, T. Okuda, T. Hikihara
- Journal Title
  
  Review of Scientific Instruments
  
  Volume: 91 Pages: 044703-044703
- NAID
  120006865715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13802
[Journal Article] A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors2018
- Author(s)
  Okuda Takafumi、Kimoto Tsunenobu、Suda Jun
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FR04-04FR04
- DOI
  10.7567/jjap.57.04fr04
- NAID
  210000149010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06890
[Journal Article] Stabilization of mode in imbalanced operation of matrix converter by time-delayed feedback control2018
- Author(s)
  Sanchez Manuel、Okuda Takafumi、Hikihara Takashi
- Journal Title
  
  International Journal of Circuit Theory and Applications
  
  Volume: 46 Issue: 12 Pages: 2420-2433
- DOI
  10.1002/cta.2556
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13802
[Journal Article] Skew Calibration with High-Power and High-Speed Pulse Generator for Oscilloscope2018
- Author(s)
  Takafumi Okuda and Takashi Hikihara
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems
  
  Volume: 138 Issue: 1 Pages: 37-40
- DOI
  10.1541/ieejeiss.138.37
- NAID
  130006301480
- ISSN
  0385-4221, 1348-8155
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06890
[Journal Article] Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance2018
- Author(s)
  Maeda Ryosuke、Okuda Takafumi、Hikihara Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FF01-04FF01
- DOI
  10.7567/jjap.57.04ff01
- NAID
  210000148915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] SiC MOSFETを用いた高周波直流昇圧回路に関する検討2019
- Author(s)
  奥田貴史，引原隆士
- Organizer
  先進パワー半導体分科会第14回研究会
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] MOSFETのためのディジタルアクティブゲートドライバに関する一検討2019
- Author(s)
  高山創，奥田貴史，引原隆士
- Organizer
  2019年電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] 空芯トランスの内部磁束密度分布測定系の開発2019
- Author(s)
  橋本和樹，奥田貴史，引原隆士
- Organizer
  先進パワー半導体分科会第14回研究会
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs2018
- Author(s)
  Takafumi Okuda and Takashi Hikihara
- Organizer
  The 2018 International Power Electronics Conference -ECCE- Asia
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] 表面電位に基づくSiC MOSFETのデバイスモデル作成と高周波スイッチング回路への応用2018
- Author(s)
  前田凌佑，奥田貴史，引原隆士
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] 漏れインダクタンス低減によるSiC MOSFETを用いたフライバックコンバータの10 MHz 駆動2018
- Author(s)
  橋本和樹，奥田貴史，引原隆士
- Organizer
  電気学会全国大会
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] A Flyback Converter with SiC Power MOSFET Operating at 10 MHz: Reducing Leakage Inductance for Improvement of Switching Behaviors2018
- Author(s)
  Kazuki Hashimoto, Takafumi Okuda, and Takashi Hikihara
- Organizer
  The 2018 International Power Electronics Conference -ECCE- Asia
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13802
[Presentation] SiCバイポーラトランジスタの1 MHzスイッチング特性2017
- Author(s)
  奥田貴史，引原隆士
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] GaN FET搭載ゲートドライバによるSiC MOSFETの20 MHz駆動2017
- Author(s)
  奥田貴史，引原隆士
- Organizer
  電気学会全国大会
- Place of Presentation
  富山大学
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] 高温環境下におけるSiC SBDの動特性のモデリング2017
- Author(s)
  前田凌佑，奥田貴史，引原隆士
- Organizer
  電気学会産業応用部門大会
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] SiC SBD接合容量モデルの高周波領域における精度検証2017
- Author(s)
  前田凌佑，奥田貴史，引原隆士
- Organizer
  電気学会全国大会
- Place of Presentation
  富山大学
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] A Study on Origin of Oscillation of Voltage Waveforms in Flyback Converter2017
- Author(s)
  Kazuki Hashimoto, Takafumi Okuda, and Takashi Hikihara
- Organizer
  2017 Taiwan and Japan Conference on Circuits and Systems
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] フライバックコンバータの電圧波形の振動に関する一検討2017
- Author(s)
  橋本和樹，奥田貴史，引原隆士
- Organizer
  電気学会産業応用部門大会
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] Investigations on Electrical Characteristics of 1-kV pnp SiC BJTs Compared with npn SiC BJT2017
- Author(s)
  Takafumi Okuda, Tsunenobu Kimoto, and Jun Suda
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] Direct Drive of a Buck Converter by Delta-Sigma Modulation at 13.56-MHz Sampling2017
- Author(s)
  Yuhei Sadanda, Takafumi Okuda, Takashi Hikihara
- Organizer
  IEEE Workshop on Control and Modeling for Power Electronics, Stanford, California
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] Analysis of Dynamic Characteristics of SiC SBD at High Switching Frequency Based on Junction Capacitance2017
- Author(s)
  Ryosuke Maeda, Takafumi Okuda, and Takashi Hikihara
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] Analysis of Transient Behavior of SiC Power MOSFETs Based on Surface Potential Model and Its Application to Boost Converter2016
- Author(s)
  Takafumi Okuda, Yohei Nakamura, Michihiro Shintani, Takashi Sato, and Takashi Hikihara
- Organizer
  4th IEEE Workshop on Wide Bandgap Power Devices and Applications
- Place of Presentation
  Arkansas, United States of America
- Year and Date
  2016-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] 大電力高速パルス生成器によるオシロスコープのスキュー補正2016
- Author(s)
  奥田貴史，引原隆士
- Organizer
  電気学会電子回路研究会
- Place of Presentation
  東京理科大学
- Year and Date
  2016-12-14
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] Impact of Annealing Temperature on Surface Passivation of SiC Epitaxial Layers with Deposited SiO2 Followed by POCl3 Annealing2016
- Author(s)
  Takafumi Okuda, Takuma Kobayashi, Tsunenobu Kimoto, and Jun Suda
- Organizer
  4th IEEE Workshop on Wide Bandgap Power Devices and Applications
- Place of Presentation
  Arkansas, United States of America
- Year and Date
  2016-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06890
[Presentation] 表面ポテンシャルモデルを用いたSiCパワーMOSFETの過渡解析および昇圧回路への応用2016
- Author(s)
  奥田貴史, 中村洋平, 新谷道広, 佐藤高史, 引原隆士
- Organizer
  平成28年電気学会産業応用部門大会
- Place of Presentation
  群馬大学
- Year and Date
  2016-08-30
- Data Source
  KAKENHI-PROJECT-16H06890

Okuda Takafumi 奥田 貴史

Research Projects

Research Products

炭化珪素デバイスの高速スイッチング特性に注目したMHz級高周波電力変換器Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Device modeling of SiC bipolar junction transistors and fabrication of high-frequency power convertersPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Measurement of internal magnetic flux density distribution in air-core toroidal transformer under high-frequency excitation2020

Author(s)

Journal Title

NAID

Data Source

[Journal Article] A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Stabilization of mode in imbalanced operation of matrix converter by time-delayed feedback control2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Skew Calibration with High-Power and High-Speed Pulse Generator for Oscilloscope2018

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Journal Article] Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Presentation] SiC MOSFETを用いた高周波直流昇圧回路に関する検討2019

Author(s)

Organizer

Data Source

[Presentation] MOSFETのためのディジタルアクティブゲートドライバに関する一検討2019

Author(s)

Organizer

Data Source

[Presentation] 空芯トランスの内部磁束密度分布測定系の開発2019

Author(s)

Organizer

Data Source

[Presentation] Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs2018

Author(s)

Organizer

Data Source

[Presentation] 表面電位に基づくSiC MOSFETのデバイスモデル作成と高周波スイッチング回路への応用2018

Author(s)

Organizer

Data Source

[Presentation] 漏れインダクタンス低減によるSiC MOSFETを用いたフライバックコンバータの10 MHz 駆動2018

Author(s)

Organizer

Data Source

[Presentation] A Flyback Converter with SiC Power MOSFET Operating at 10 MHz: Reducing Leakage Inductance for Improvement of Switching Behaviors2018

Author(s)

Organizer

Data Source

[Presentation] SiCバイポーラトランジスタの1 MHzスイッチング特性2017

Author(s)

Organizer

Data Source

[Presentation] GaN FET搭載ゲートドライバによるSiC MOSFETの20 MHz駆動2017

Author(s)

Organizer

Okuda Takafumi 奥田貴史