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NOMURA Shigeru  野村 滋

ORCIDConnect your ORCID iD *help
… Alternative Names

野村 滋  ノムラ シゲル

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Researcher Number 10002859
External Links
Affiliation (based on the past Project Information) *help 1998 – 2002: 室蘭工業大学, 工学部, 教授
1996: 室蘭工業大学, 工学部, 教授
1994: 室蘭工業大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子デバイス・機器工学
Except Principal Investigator
Electronic materials/Electric materials
Keywords
Principal Investigator
急速熱処理 / NITROUS OXIDE GAS / DEVICE PROCESS / SILICON TECHNOLOGY / RAPID THERMAL PROCESSING / ULTRATHIN SILICON OXYNITRIDE FILM / シリコンテクノロジー / デバイスプロセス / 一酸化二窒素ガス / 極薄シリコン酸窒化膜 … More / 絶縁破壊特性 / 電子捕獲 / 極薄シリコン酸化膜 / シリコン酸窒化膜 / 酸窒化膜 / 界面準位密度 / 一酸化二窒素 / シリコン酸化膜 … More
Except Principal Investigator
MOS STRUCTURE / QUANTUM CONFINEMENT / QUANTUM TUNNELING / QUANTUM WELL / GERMANIUM / MOS構造 / 量子閉じ込め効果 / 量子トンネル伝導 / 量子井戸 / ナノ結晶 / ゲルマニウム / NANOCRYSTAL / NANOCRYTAL Less
  • Research Projects

    (5 results)
  • Co-Researchers

    (2 People)
  •  SELF-FORMATION OF GERMANIUM NANOCRYSTALS AND ITS APPLICATION TO SELF-ADAPTIVE NEURAL DEVICES

    • Principal Investigator
      FUKUDA Hisashi
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      MURORAN INSTITUTE OF TECHNOLOGY
  •  SELF-FORMATION OF GERMANIUM NANOCRYSTALS AND ITS APPLICATION TO SELF-ADAPTIVE NEURAL DEVICES

    • Principal Investigator
      FUKUDA Hisashi
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      MURORAN INSTITUTE OF TECHNOLOGY
  •  Formation of High Quality Ultrathin Oxynitride Films by Rapid Thermal Oxidation in a Nitrous Oxide Gas AmbientPrincipal Investigator

    • Principal Investigator
      NOMURA Shigeru
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Muroran Institute of Technology
  •  N_2O酸窒化急速熱処理による高性能極薄シリコン酸化膜の形成Principal Investigator

    • Principal Investigator
      野村 滋
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Muroran Institute of Technology
  •  N_2O酸窒化急速熱処理による高性能極薄シリコン酸化膜の形成Principal Investigator

    • Principal Investigator
      野村 滋
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Muroran Institute of Technology
  • 1.  FUKUDA Hisashi (10261380)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  遠藤 敏明 (60002903)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results

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