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AOKI Takeshi  青木 彪

ORCIDConnect your ORCID iD *help
Researcher Number 10023186
External Links
Affiliation (based on the past Project Information) *help 2000 – 2002: 東京工芸大学, 工学部, 教授
1991 – 1995: 東京工芸大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子材料工学
Keywords
Principal Investigator
フォトルミネッセンス / 水素エッチング / ECRプラズマCVD / CVD / TFT / アモルファス-微結晶相転移 / 光電特性 / 太陽電池 / 光電感度 / 水素ラジカル照射 … More / ゲルマニウム / ECR Plasma / Germanium / lifetime / photoluminescence / microcrystal / amorphous / nanocrystal / ECR / 優先配向 / 励起子 / エピタキシャル / ECRプラズマ / 寿命 / 微結晶 / アモルファス / ナノクリスタル / light degradation effects / surface field effect mobility / HALL mobilty / optoelectronic parameter / amorphous-microcrystalline phase transition / ECR plasma CVD / Ge films / フォトルミネッセンス特性 / 電子衝撃 / ion charge up / ゲートしきい値電圧 / ホール移動度 / プラズマ制御 / ECRプラズマ(P)CVD / 光劣化効果 / 表面電界効果移動度 / HALL移動度 / アモルファス・微結晶相転移 / ゲルマニウム膜 / Amorphous-microcrystalline transition / Hydrogen etching / Ion irradiation / Electron irradiation / Atomic hydrogen irradiation / Optoelectronic properties / ECR PCVD / Hydrogenated amorphous Ge (a-Ge : H) / 局在準位密度 / CPM / 非晶質ゲルマニウム / 水素希釈度 / 基板温度 / 微結晶化 / イオン・電子照射 / 水素化アモルファスゲルマニウム / イオン照射 / 電子照射 / 水素化非晶質Ge(a-Ge:H) / アモルファス半導体 Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (3 People)
  •  Fabrication of high performance nano-crystalline germanium films using ultra-clean ECR plasma CVDPrincipal Investigator

    • Principal Investigator
      AOKI Takeshi
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOKYO INSTITUTE OF POLYTECHNICS
  •  Film growth of high quality microcrystalline germanium by ECR plasma CVDPrincipal Investigator

    • Principal Investigator
      AOKI Takeshi
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Polytechnic University
  •  高効率太陽電池用狭バンドギャップ・アモルファス半導体の高品質成膜法Principal Investigator

    • Principal Investigator
      青木 彪
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Polytechnic University
  •  Deposition of Narrow Bandgap Amorphous Semiconductor for High Efficiendy Solar CellsPrincipal Investigator

    • Principal Investigator
      AOKI Takeshi
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Tokyo Institute of Polytechnics
  • 1.  NISHIKAWA Yasuo (90228172)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 2.  飯塚 昌之 (80024280)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  KOBAYASHI Shi-ichi (60277944)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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