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PAK Kangsa  朴 康司

ORCIDConnect your ORCID iD *help
Researcher Number 10124736
External Links
Affiliation (based on the past Project Information) *help 2010 – 2011: 豊橋技術科学大学, 大学院・工学研究科, 准教授
2009: Toyohashi University of Technology, 工学部, 准教授
2002 – 2003: 豊橋技術科学大学, 工学部, 助教授
1997 – 1998: 豊橋技術科学大学, 工学部, 助教授
1989 – 1993: 豊橋技術科学大学, 工学部, 助教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / 電子材料工学
Except Principal Investigator
電子デバイス・機器工学 / 物理計測・光学
Keywords
Principal Investigator
集束イオンビーム / ヘテロエピタキシャル成長 / 分子線エピタキシー / シリコン基板上インジウムりん / FIB / 化合物半導体 / 選択成長 / シリコン基板上アルミニウムりん / ゲルマニウム基板上ガリウム砒素 / シリコン基板上ガリウム砒素 … More / Gallium compounds / Molecular beam epitaxy / Doping / Selective epitaxy / Semiconducting gallium arsenide / Focused ion beam / マスクレス / GaAs / Ga化合物 / ドーピング / 選択エピタキシー / GaAs半導体 / 両性不純物 / 不純物ドーピング / 不純物ドー / ガリウムヒ素 / ゲルマニウム基板上ガリウム石比素 / シリコン基板上ガリウム石比素 / ガリウムりん基板上インジウムりん / ガリウム砒素基板上インジウムりん / 分子線エピタキシ- / 2段階成長法 / 分子線エピタキシ-法 / 有機金属気相成長法 / ガリウムひ素 / インジウムりん … More
Except Principal Investigator
自己組織化 / 結合重み / 光配線 / 適応デバイス / 光電子集積回路 / ヘテロエピタキシー / ニューロデバイス / ニューロコンピューティング / ニュ-ロデバイス / analog integrated circuit / target tracking / optical flow / motion detection / local adaptation / vision chip / retina / vision / 視覚情報処理 / 特徴抽出 / 適応機能 / シリコン網膜 / ニューロ・チップ / ターゲット・トラッキング / オプティカル・フロー / 動き検出 / 局所明暗順応 / ビジョン・チップ / 網膜機能 / 視覚機能 / GaAs on Si / Hetero-epitaxy / Optoelectronic Integrated Circuit / Self-Organization / Synaptic Connection / Variable Synaptic Weight / Neural Network / Neuro-device / アナログ重み / ニュ-ロン / 神経回路網 / シリコン基板上ガリウム砒素 / ヘテロエピタキシ- / 可変シナプス結合重み / シナプス結合 / ニュ-ラルネットワ-ク / 光配線素子 / ニューロチップ / 短周期超格子 / 教師有り学習 / ニュ-ロコンピュ-ティング Less
  • Research Projects

    (11 results)
  • Research Products

    (14 results)
  • Co-Researchers

    (11 People)
  •  In-situ micro-structure fabrication of semiconductor device using maskless selective growth with FIBPrincipal Investigator

    • Principal Investigator
      PAK Kangsa
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Toyohashi University of Technology
  •  A study on maskless selective epitaxy of compound semiconductor using low energy FIBPrincipal Investigator

    • Principal Investigator
      PAK Kangsa
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Toyohashi University of Technology
  •  Research on a vision chip based on biological systems

    • Principal Investigator
      YONEZU Hiroo
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体-Si系ヘテロエピタキシーの初期原子層制御と転位低減化に関する研究Principal Investigator

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体-Si系ヘテロエピタキシーの初期原子層制御と転位低減化に関する研究Principal Investigator

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  光電子ニューロデバイスの研究

    • Principal Investigator
      米津 宏雄
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体ーSi系ヘテロエピタキシ-の初期原子層制御と転位低減化に関する研究Principal Investigator

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  光電子ニュ-ロデバイスの研究

    • Principal Investigator
      米津 宏雄
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  光電子ニューロデバイスの研究

    • Principal Investigator
      米津 宏雄
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Toyohashi University of Technology
  •  InPーGaAsヘテロ系エピタキシャル成長の初期過程制御と高品質化に関する研究Principal Investigator

    • Principal Investigator
      朴 康司
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Toyohashi University of Technology
  •  Basic Research on Optoelectronic Devices for Neural Networks

    • Principal Investigator
      YONEZU Hiroo
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      物理計測・光学
    • Research Institution
      Toyohashi Institute of Technology

All 2011 2010 2009 2005 2004 2003 2002

All Journal Article Presentation

  • [Journal Article] Maskless selective growth and in-situ Beryllium-doping of GaAs grown by Low-energy focused ion beam2005

    • Author(s)
      E.M.Kim, T.Nishiyama, K.Numata, S.Itoh, T.Gotoh, K.Pak
    • Journal Title

      Journal of Crystal Growth (in print)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] Maskless selective growth and in-situ Beryllium-doping of GaAs grown by Low-energy focused ion beam2005

    • Author(s)
      E.M.Kim, T.Nishiyama, K.Numata, S.Itoh, T.Gotoh, K.Pak
    • Journal Title

      Journal of Crystal Growth 印刷中

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] The Doping Study on Maskless Selective Direct Growth of GaAs using Low Energy Focused Ion Beam2004

    • Author(s)
      T.Nishiyama, E.M.Kim, K.Numata, K.Pak
    • Journal Title

      Japanese Journal of Applied Physics vol.43, No.6A

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] The Doping Study on Maskless Selective Direct Growth of GaAs Using Low Energy Focused Ion Beam2004

    • Author(s)
      T.Nishiyama, E.M.Kim, K.Numata, K.Pak
    • Journal Title

      Japanese Journal of Applied Physics 43・6A

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] Maskless selective growth and doping of GaAs using a low energy focused ion beam for in-situ micro-device structures fabrication, and its evaluation2003

    • Author(s)
      T.Nishiyama, E.M.Kim, K.Numata, K.Pak
    • Journal Title

      Technical Report of IEICE.ED2003-32, CPM2003-31, SDM2003-32

      Pages: 87-91

    • NAID

      110003175053

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] 低エネルギー集束イオンビームを用いたGaAsのマスクレス選択成長におけるドーピングと評価2003

    • Author(s)
      西山友和, 金恩美, 沼田和俊, 朴康司
    • Journal Title

      電子情報通信学会 信学技報 CPM2003-31

      Pages: 87-91

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] Maskless selective direct growth and doping of GaAs using a Ga-Sn low Energy focused ion beam for in-situ micro-device structure fabrication2002

    • Author(s)
      D.H.Cho, Y.Suzuki, M.Tanaka, M.Hachiro, K.Pak
    • Journal Title

      Journal of Crystal Growth 237-239

      Pages: 1455-1459

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Journal Article] Maskless selective direct growth and doping of GaAs using a Ga-Sn low Energy focused ion beam for in-situ micro-device structure fabrication2002

    • Author(s)
      D.H.Cho, Y.Suzuki, M.Tanaka, M.Tanaka, M.Hachiro, K.Pak
    • Journal Title

      Journal of Crystal Growth vol237-239

      Pages: 1455-1459

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14550298
  • [Presentation] Study of maskless selective growth and evaluation of GaAs using a low energy Sn-Ga focused ion beam2011

    • Author(s)
      M. Mokhtar, M. Ishikawa, M. Hisada and K. Pak
    • Organizer
      30^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560327
  • [Presentation] Study of maskless selective growth and evaluation of GaAs using a low energy Sn-Ga focused ion beam2011

    • Author(s)
      M.Mokhtar, M.Ishikawa, M.Hisada, K.Pak
    • Organizer
      30^h Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560327
  • [Presentation] A study of in-situ doping on maskless selective growth of GaAs using a low energy Sn-Ga focused ion beam2010

    • Author(s)
      H.Takeda, M.Mokhtar, M.Ishikawa, K.Pak
    • Organizer
      29^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Shuzenji, Izu, Shizuoka, Japan
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21560327
  • [Presentation] A study of in-situ doping on maskless selective growth of GaAs using a low energy Sn-Ga focused ion beam2010

    • Author(s)
      H. Takeda, M. Mokhtar, M. Ishikawa, and Pak
    • Organizer
      29^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21560327
  • [Presentation] Maskless selective growth and doping of n-GaAs using a low energy Sn-Ga focused ion beam2009

    • Author(s)
      T. Suzuki, K. Nobuhara, H. Takeda, M. Mokhtar, K. Pak
    • Organizer
      28^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PROJECT-21560327
  • [Presentation] Maskless selective growth and doping of n-GaAs using a low energy Sn-Ga focused ionbeam2009

    • Author(s)
      T. Suzuki, K. Nobuhara, H. Takeda, M. Mokhtar and K. Pak
    • Organizer
      28^<th> Electronic Material Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PROJECT-21560327
  • 1.  YONEZU Hiroo (90191668)
    # of Collaborated Projects: 9 results
    # of Collaborated Products: 0 results
  • 2.  TAKANO Yasushi (00197120)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 3.  ISHIDA Makoto (30126924)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  大島 直樹 (70252319)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  崔 坪
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  辛 長〓
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  孫 炳基
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  SOHN Pyong-Ki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  SHIN Jang-Kyu
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  SHIN Pyong-Choi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  辛 長奎
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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