Horio Kazushige 堀尾和重

… Alternative Names

HORIO KAZUSHIGE 堀尾和重

HORIO Kazushi 堀尾和重

HORIO Kazushige 堀尾和重

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Researcher Number	10165590
Other IDs
Affiliation (based on the past Project Information) *help	2016 – 2019: 芝浦工業大学, システム理工学部, 教授 2011 – 2013: 芝浦工業大学, システム工学部, 教授 2002 – 2006: 芝浦工業大学, システム工学部, 教授 1996 – 1997: 芝浦工業大学, システム工学部, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学
Keywords	Principal Investigator バッファ層 / 電流コラプス / GaN / device simulation / トラップ / HEMT / GaN HEMT / AlGaN / buffer layer / trap … More / gate lag / drain lag / current collapse / ゲートラグ / ドレインラグ / FET / デバイスシミュレーション / ２次元解析 / 耐圧 / フィールドプレート / マイクロ・ナノデバイス / 半導体物性 / 電子デバイス・機器 / 高誘電率膜 / 深いアクセプタ / 窒化ガリウム / 電流スランプ / 電解効果トランジスタ / A1GaN / MESFET / シミュレーション / gallium arsenide / cutoff frequency / energy transport model / heterojunction bipolar transistor / nonequilibrium carrier transport / ガリウムヒ素 / 遮断周波数特性 / エネルギー輸送モデル / ヘテロ接合バイポーラトランジスタ / キャリア非平衡輸送 / 計算機解析 / ガリウムナイトライド Less

Research Projects
(5 results)
Research Products
(101 results)

Reduction in current collapse and enhancement of breakdown voltage in GaN-based HEMTsPrincipal Investigator
- Principal Investigator
  
  Horio Kazushige
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shibaura Institute of Technology
Theoretical study on abnormal phenomena and degradation in GaN-based HEMTs and reuction method of themPrincipal Investigator
- Principal Investigator
  
  HORIO KAZUSHIGE
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shibaura Institute of Technology
Simulation of Widegap Semiconductor DevicesPrincipal Investigator
- Principal Investigator
  
  HORIO Kazushige
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shibaura Institute of Technology
Modeling of GaN-based Electron DevicesPrincipal Investigator
- Principal Investigator
  
  HORIO Kazushi
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shibaura Institute of Technology
Modeling of Nano-Scale Semiconductor DevicesPrincipal Investigator
- Principal Investigator
  
  HORIO Kazushige
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shibaura Institute of Technology

All 2019 2018 2017 2016 2014 2013 2012 2011 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer’s acceptor density2019
- Author(s)
  S. Akiyama, M. Kondo, L. Wada, and K. Horio
- Journal Title
  
  Jpn J. Appl. Phys
  
  Volume: 58 Issue: 6 Pages: 068003-068003
- DOI
  10.7567/1347-4065/ab1e8f
- NAID
  210000155899
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Analysis of breakdown voltages in AlGaN/GaN HEMTs with low-k/high-k double passivation layers2019
- Author(s)
  K. Nakamura, H. Hanawa, K. Horio
- Journal Title
  
  IEEE Trans. Device Mater. Rel.
  
  Volume: 19 Issue: 2 Pages: 298-303
- DOI
  10.1109/tdmr.2019.2903213
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Enhancement of breakdown voltage in AlGaN/GaN HEMTs: Field plate plus high-k passivation layer and high acceptor density in buffer layer2018
- Author(s)
  T. Kabemura, S. Ueda, Y. Kawada, and K. Horio
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 65 Issue: 9 Pages: 3848-3854
- DOI
  10.1109/ted.2018.2857774
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Analysis of reduction in lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer2018
- Author(s)
  Y. Saito, R. Tsurumaki, N. Noda and K. Horio
- Journal Title
  
  IEEE Trans. Device Mater. Rel.
  
  Volume: 18 Pages: 46-53
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN HEMTs with a high-k passivation layer2017
- Author(s)
  Y. Kawada, H. Hanawa and K. Horio
- Journal Title
  
  Jpn J. Appl. Phys
  
  Volume: 56 Pages: 108003-108003
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers2017
- Author(s)
  R. Tsurumaki, N. Noda and K. Horio
- Journal Title
  
  Microelectronics Reliability
  
  Volume: ７３ Pages: 36-41
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06314
[Journal Article] Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer2014
- Author(s)
  H. Hanawa, H. Onodera, A. Nakajima, K. Horio
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: vol.61, no.3 Pages: 769-775
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer2014
- Author(s)
  H. Hanawa, H. Onodera, A. Nakajima, and K. Horio
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 61 Pages: 769-775
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer2014
- Author(s)
  H. Hanawa, K. Horio
- Journal Title
  
  Phys. Status Solidi (a)
  
  Volume: vol.211, no.4 Pages: 784-787
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer2014
- Author(s)
  H. Hanawa and K. Horio
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 211 Pages: 784-787
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of lags and current collapse in source-field-plate AlGaN/GaN high electron mobility transistors2013
- Author(s)
  H. Hanawa, H. Onodera and K. Horio
- Journal Title
  
  Jpn J. Appl. Phys
  
  Volume: 52
- NAID
  210000142767
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of lags and current collapse in source-field-plate AlGaN/GaN high electron mobility transistors2013
- Author(s)
  H. Hanawa, H. Onodera, K. Horio
- Journal Title
  
  Jpn J. Appl. Phys.
  
  Volume: vol.52, no.8
- NAID
  210000142767
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Buffer-related gate lag in AlGaN/GaN HEMTs2012
- Author(s)
  A. Nakajima, K. Fujii, K. Horio
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: vol.9, no.7 Pages: 1658-1660
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs2012
- Author(s)
  K. Horio and H. Onodera
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Issue: 7 Pages: 1655-1657
- DOI
  10.1002/pssc.201100554
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small sized AlGaN/GaN high electron mobility transistors2012
- Author(s)
  H. Onodera, K. Horio
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: vol.27, no.8
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Buffer-related gate lag in AlGaN/GaN HEMTs2012
- Author(s)
  A. Nakajima, K. Fujii and K. Horio
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Issue: 7 Pages: 1658-1660
- DOI
  10.1002/pssc.201100636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs2012
- Author(s)
  K. Horio, H. Onodera
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: vol.9, no.7 Pages: 1655-1657
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small sized AlGaN/GaN high electron mobility transistors2012
- Author(s)
  H. Onodera and K. Horio
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 27 Issue: 8 Pages: 0850161-6
- DOI
  10.1088/0268-1242/27/8/085016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of backside-electrode and gate-field-plate effects on buffer-related current collapse in AlGaN/GaN high electron mobility transistors2011
- Author(s)
  K. Horio, H. Onodera, A. Nakajima
- Journal Title
  
  J. Appl. Phys.
  
  Volume: vol.109, no.11
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors2011
- Author(s)
  A. Nakajima, K. Fujii, K. Horio
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: vol.50, no.10
- NAID
  40019043757
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Analysis of backside-electrode and gate-field-plate effects on buffer-related current collapse in AlGaN/GaN high electron mobility transistors2011
- Author(s)
  K. Horio, H. Onodera and A. Nakajima
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 109 Pages: 1145081-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors2011
- Author(s)
  A. Nakajima, K. Fujii and K. Horio
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Pages: 1043031-6
- NAID
  40019043757
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560411
[Journal Article] Anaya's of buffer-related Tag phenomena and current collapse in Gan FETs2007
- Author(s)
  K.Itagaki, N.kobayashi, K.Horio
- Journal Title
  
  phys. stat. sol. (c) vol4,No.4
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Analysis of buffer-related lag phenomena and current collapse in GaN FETs2007
- Author(s)
  K.Itagaki, N.Kobayashi, K.Horio
- Journal Title
  
  phys.stat sol.(c) Vol.4
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Similarities of buffer-related lag phenomena and current slump between GaN MESFETs and AlGaN/GaN HEMTs2007
- Author(s)
  K.Horio, H.Takayanagi, K.Itagaki, A.Nakajima
- Journal Title
  
  Proceedings of the 3rd Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 140-145
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Analysis of buffer-related lag phenomena and current collapse in GaN FETs2007
- Author(s)
  K.Itagaki, N.Kobayashi, K.Horio
- Journal Title
  
  phys. stat sol. (c) Vol. 4
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Similarities of butter-related lag phencaeia and current stamp between Gan MESFETs and AlGaNiGan HEMTs2007
- Author(s)
  K.Horio, H.Takayanagi, K.Itagaki, A.Nakajima
- Journal Title
  
  Proceedings of the 3rd Asia-Pacific workshop on Widogap Semiconductors
  
  Pages: 140-145
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Numerical analysis of pulsed I-V curves and current compression in GaN FETs2006
- Author(s)
  K.Itagaki, H.Takayanagi, H.Nakano, K.Horio
- Journal Title
  
  Proceedings of Asia-Pacific Microwave Conference 2006
  
  Pages: 421-424
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Numerical simulation of drain-current transients and current compression in GaN MESFETs2006
- Author(s)
  H.Takayanagi, K.Itagaki, K.Horio
- Journal Title
  
  Proceedings of Nanotech 2006
  
  Pages: 55-58
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Numerical analysis of pulsed I-V curves and currents compression in Gan FETs2006
- Author(s)
  K.Itagaki, H.Takayanagi, H.Nakano, K.Horio
- Journal Title
  
  Proceedings of Asia-Pacific Microwave Conference 2006
  
  Pages: 421-424
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Numerical simulation of drain-current transients and current compression in GaN MESFETs2006
- Author(s)
  H.Takayanagi, K.Itagaki, K.Horio
- Journal Title
  
  Proceedings of Nanotech 2006 Vol. 3
  
  Pages: 55-58
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Deep-level effects on slow current transients and current collapse in GaN MESFETs2005
- Author(s)
  K.Yonemoto, K.Horio
- Journal Title
  
  Proceedings of the 13th Semi-conducting and Insulating Materials Conference (IEEE SIMX-XIII)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Buffer-trapping effects on drain lag and power compression in GaN FET2005
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  phys.stat.sol.(c) vol.2,no.7
  
  Pages: 2635-2638
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Deep-level effects on slow current transients and current collapse in GaN MESFETs2005
- Author(s)
  K.Yonemoto, K.Horio
- Journal Title
  
  Proceedings of IEEE SIMC-XIII (印刷中)
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Numerical analysis of pulsed I-V curves and current collapse in GaN FETs as affected by buffer trapping2005
- Author(s)
  H.Nakano, H.Takayanagi, K.Yonemoto, K.Horio
- Journal Title
  
  Proceedings of 2005 IEEE Compound Semiconductor IC Symposium
  
  Pages: 141-144
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Physics-Based Simulation of Buffer-Trapping Effects on Slow Current Transients and Current Collapse in Gan Field Effect Transistors2005
- Author(s)
  K.Horio, K.Yonemoto, H.Takayanagi, H.Nakano
- Journal Title
  
  J.Appl.Phys. Vol.98, No.12
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Buffer-trapping effects on drain lag and power compression in GaN FET2005
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  phys.stat.sol.(c) Vol.2(印刷中)
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Deep-level effects on slow current transients and current collapse in GaN MESFETs2005
- Author(s)
  K.Yonemoto, K.Horio
- Journal Title
  
  Proceedings of the 13^<th> Semi-conducting and Insulating Materials Conference(IEEE SIMC-XIII)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Numerical Analysis of Pulsed I-V Curves and Current Collapse in GaN FETs as Affected by Buffer Trapping2005
- Author(s)
  H.Nakano, H.Takayanagi, K.Yonemoto, K.Horio
- Journal Title
  
  Proceedings of IEEE Compound Semiconductor IC Symposium
  
  Pages: 141-144
- Data Source
  KAKENHI-PROJECT-17560317
[Journal Article] Buffer-trapping effects on drain lag and power compression in GaN FET2005
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  phys.stat.sol.(c) 2
  
  Pages: 2635-2638
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Simulation of power compression in GaAs and GaN MESFETs2004
- Author(s)
  K.Horio, Y.Kazami, D.Kasai
- Journal Title
  
  Proceedings of 2004 International Symposium of Signals, Systems and Electronics
  
  Pages: 116-119
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Analysis of drain lag and power compression in GaN MESFET2004
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004)
  
  Pages: 567-569
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Numerical analysis of current transients and power slump in GaAs and GaN FETs2004
- Author(s)
  K.Horio, Y.Kazami, D.Kasai, K.Yonemoto
- Journal Title
  
  Proceedings of 2004 Asia-Pacific Microwave Conference (APMC'04)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Analysis of drain lag and power compression in GaN MESFET2004
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  Proceedings of GAAS2004
  
  Pages: 567-569
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Analysis of drain lag and power compression in GaN MESFET2004
- Author(s)
  K.Horio, K.Yonemoto
- Journal Title
  
  Proceedings of 12^<th> European Gallium Arsenide and Other Semiconductor Application Symposium(GAAS 2004)
  
  Pages: 567-569
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Simulation of power compression in GaAs and GaN MESFETs2004
- Author(s)
  K.Horio, Y.Kazami, D.Kasai
- Journal Title
  
  Proceedings of 2004 International Symposium on Signals, Systems and Electronics(ISSSE'04)
  
  Pages: 116-119
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Simulation of power compression in GaAs and GaN MESFETs2004
- Author(s)
  K.Horio, Y.Kazami, D.Kasai
- Journal Title
  
  Proceedings of ISSSE'04
  
  Pages: 116-119
- Data Source
  KAKENHI-PROJECT-14550329
[Journal Article] Numerical analysis of current transients and power slump in GaAs and GaN FETs2004
- Author(s)
  K.Horio, Y Kazami, D.Kasai, K.Yonemoto
- Journal Title
  
  Proceedings of 2004 Asia-Pacific Microwave Conference(APMC'04)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550329
[Presentation] Gate-length dependence of gate lag, drain lag and current collapse in field-plate AlGaN/GaN HEMTs2019
- Author(s)
  T. Chiba, Y. Saito, R. Tsurumaki, and K. Horio
- Organizer
  13th International Conference of Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs: Dependence on deep-acceptor density in buffer layer2019
- Author(s)
  S. Akiyama, M. Kondo, L. Wada, and K. Horio
- Organizer
  2019 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of gate-length dependence of lags and current collapse in field-plate AlGaN/GaN HEMTs2019
- Author(s)
  T. Chiba, Y. Saito, R. Tsurumaki, and K. Horio
- Organizer
  2019 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Dependence of breakdown voltage enhancement on buffer acceptor density and gate-to-drain distance in AlGaN/GaN HEMTs with high-k passivation layer2019
- Author(s)
  R. Tomita, S. Ueda, Y. Kawada, and K. Horio
- Organizer
  2019 IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Dependence of breakdown voltage on gate-to-drain distance of AlGaN/GaN HEMTs with high-k passivation layer2019
- Author(s)
  R. Tomita, S. Ueda, Y. Kawada, and K. Horio
- Organizer
  43rd Workshop on Compound Semiconductors and Integrated Circuits
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown voltage of AlGaN/GaN HEMTs with high-k passivation layer and high acceptor density in buffer layer2019
- Author(s)
  S. Ueda, R. Tomita, Y. Kawada, and K. Horio
- Organizer
  2019 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Dependence of breakdown voltage enhancement on gate-to-drain distance of AlGaN/GaN HEMTs with high-k passivation layer2019
- Author(s)
  R. Tomita, S. Ueda, Y. Kawada, and K. Horio
- Organizer
  9tth Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] High average breakdown field between gate and drain in AlGaN/GaN HEMTs with high-k passivation layer2019
- Author(s)
  R. Tomita, S. Ueda, Y. Kawada, and K. Horio
- Organizer
  13th International Conference of Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown characteristics of AlGaN/GaN HEMTs with low-k/high-k double passivation layers2018
- Author(s)
  K. Nakano, H. Hanawa, K. Horio
- Organizer
  2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effect of acceptor density in buffer layer on breakdown characteristics of AlGaN/GaN HEMTs with high-k passivation layer2018
- Author(s)
  S. Ueda, Y. Kawada, and K. Horio
- Organizer
  42nd Workshop on Compound Semiconductor Devices and Integrated Circuits
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown voltages of field-plate AlGaN/GaN HEMTs with high-k passivation layer2018
- Author(s)
  T. Kabemura, H. Hanawa, and K. Horio
- Organizer
  2018 International Workshop on Nitride semiconductors (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Enhancement of breakdown voltage in AlGaN/GaN HEMTs: High-k passivation layer and high acceptor density in buffer layer2018
- Author(s)
  S. Ueda, Y. Kawada, and K. Horio
- Organizer
  2018 International Workshop on Nitride semiconductors (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Simulation of breakdown characteristics of AlGaN/GaN HEMTs with double passivation layers2018
- Author(s)
  K. Nakano, H. Hanawa, and K. Horio
- Organizer
  2018 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer2018
- Author(s)
  T. Kabemura, H. Hanawa, and K. Horio
- Organizer
  2018 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Breakdown voltage of AlGaN/GaN HEMTs with low-k/high-k double passivation layers2018
- Author(s)
  K. Nakano, H. Hanawa, K. Horio
- Organizer
  2018 IEEE Semiconductor Interface Specialists Conference (SISC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effect of deep-acceptor density in buffer layer on breakdown voltage of AlGaN/GaN HEMTs with high-k passivation layer2018
- Author(s)
  S. Ueda, Y. Kawada, and K. Horio
- Organizer
  2018 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown characteristics of AlGaN/GaN HEMTs with double passivation layers2018
- Author(s)
  K. Nakano, H. Hanawa, K. Horio
- Organizer
  IEEE WiPDA Asia 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Suppression of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer2017
- Author(s)
  Y. Saito, R. Tsurumaki, N. Noda and K. Horio
- Organizer
  European Microwave Integrated Circuits Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers2017
- Author(s)
  K. Horio and H. Hanawa
- Organizer
  2017 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Breakdown voltage enhancement in AlGaN/GaN HEMTs using double passivation layers with a high-k dielectric2017
- Author(s)
  K. Horio and H. Hanawa
- Organizer
  2017 IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer2017
- Author(s)
  Y. Kawada, H. Hanawa and K. Horio
- Organizer
  2017 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer2017
- Author(s)
  Y. Saito, R. Tsurumaki, N. Noda and K. Horio
- Organizer
  2017 TechConnect World Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effects of acceptors in a buffer layer on breakdown characteristics of AlGaN/GaN HEMTs with a high-k passivation layer2017
- Author(s)
  Y. Kawada, H. Hanawa and K. Horio
- Organizer
  12th International Conference of Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers2017
- Author(s)
  K. Horio and H. Hanawa
- Organizer
  12th International Conference of Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers using a high-k dielectric2017
- Author(s)
  K. Horio and H. Hanawa
- Organizer
  41st Workshop on Compound Semiconductor Devices and Integrated Circuits
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Similarities of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers2016
- Author(s)
  R. Tsurumaki, N. Noda and K. Horio
- Organizer
  2016 International Workshop on Nitride Semiconductors
- Place of Presentation
  Ｏｒｌａｎｄ，　ＵＳＡ
- Year and Date
  2016-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effects of buffer leakage on breakdown characteristics of AlGaN/GaN HEMTs with a high-k passivation layer2016
- Author(s)
  Y. Satoh, H. Hanawa and K. Horio
- Organizer
  2016 IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-12-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer2016
- Author(s)
  Y. Satoh, H. Hanawa and K. Horio
- Organizer
  European Microwave Integrated Circuits Conference 2016
- Place of Presentation
  London, UK
- Year and Date
  2016-10-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06314
[Presentation] Breakdown voltage enhancement in AlGaN/GaN HEMTs using a high-k passivation layer2013
- Author(s)
  K. Horio, H. Hanawa
- Organizer
  Proceedings of 37th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2013)
- Place of Presentation
  Rostok, Germany
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer2013
- Author(s)
  H. Hanawa, K. Horio
- Organizer
  Abstracts of the Tenth International Conference of Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, USA
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs2013
- Author(s)
  K. Horio, H. Onodera, T. Fukai
- Organizer
  Proceedings of Nanotech 2013
- Place of Presentation
  Washington, USA
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs2013
- Author(s)
  H. Hanawa, H. Onodera, A. Nakajima, K. Horio
- Organizer
  Proceedings of 2013 IEEE International Reliability Physics Symposium (IRPS 2013)
- Place of Presentation
  Monterey, USA
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Analysis of lags and current collapse in source-field-plate AlGaN/GaN HEMTs2012
- Author(s)
  H. Hanawa, H. Onodera, K. Horio
- Organizer
  Proceedings of 2012 International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan(MoP-ED-18)
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Analysis of breakdown characteristics in small-sized field-plate AlGaN/GaN HEMTs2012
- Author(s)
  H. Onodera, K. Horio
- Organizer
  Proceedings of 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012)
- Place of Presentation
  Porquerolles, France
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] ゲート及びソースフィールドプレートAlGaN/GaN HEMTのラグや電流コラプスの類似性2012
- Author(s)
  塙，小野寺，中島，堀尾
- Organizer
  ２０１２年電子情報通信学会総合大会
- Place of Presentation
  岡山大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs2012
- Author(s)
  H. Onodera, K. Horio
- Organizer
  Proceedings of the European Microwave Integrated Circuits Conference 2012
- Place of Presentation
  Amsterdam, Netherland
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] ソースフィールドプレート構造AlGaN/GaN HEMTにおける電流コラプスの解析2012
- Author(s)
  塙，小野寺，堀尾
- Organizer
  ２０１２年春季第５９回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] 微細AlGaN/GaN HEMTの耐圧特性に与えるバッファ層内不純物とフィールドプレートの影響の解析2012
- Author(s)
  小野寺，中島，堀尾
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  機会振興会館（東京都）
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] フィールドプレート構造微細AlGaN/GaN HEMTの耐圧特性の解析2012
- Author(s)
  小野寺，堀尾
- Organizer
  ２０１２年春季第５９回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Buffer-related gate lag in AlGaN/GaN HEMTs2011
- Author(s)
  A. Nakajima, K. Fujii, K. Horio
- Organizer
  Abstracts of the 16th Semiconducting and Insulating Materials Conference (SIMC-XVI)
- Place of Presentation
  Stockholm, Sweden(Tu3-24)
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] フィールドプレート構造微細AlGaN/GaN HEMTの耐圧特性の数値解析2011
- Author(s)
  小野寺，中島，堀尾
- Organizer
  平成２３年度電気関係学会東北支部連合大会
- Place of Presentation
  東北学院大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs2011
- Author(s)
  K. Horio, H. Onodera
- Organizer
  Abstracts of the 16th Semiconducting and Insulating Materials Conference (SIMC-XVI)
- Place of Presentation
  Stockholm, Sweden(Tu1-8)
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Effects of buffer traps on breakdown characteristics in field-plate AlGaN/GaN HEMTs2011
- Author(s)
  H. Onodera, A. Nakajima, K. Horio
- Organizer
  Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011)
- Place of Presentation
  Toba, Japan
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs2011
- Author(s)
  H. Onodera, A. Nakajima, K. Horio
- Organizer
  Proceedings of the European Microwave Integrated Circuits Conference 2011
- Place of Presentation
  Manchester, United Kingdom
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs2011
- Author(s)
  K. Horio
- Organizer
  2011 European Microwave Integrated Circuits Conference
- Place of Presentation
  Manchester, England
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Field-plate and back-electrode effects on lag and current collapse in AlGaN/GaN HEMTs2011
- Author(s)
  H. Onodera, A. Nakajima, K. Horio
- Organizer
  Proceedings of the 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011)
- Place of Presentation
  Toba, Japan
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Effects of buffer impurities and field plate on breakdown performance in small-sized AlGaN/GaN HEMTs2011
- Author(s)
  H. Onodera, A. Nakajima, K. Horio
- Organizer
  Abstracts of the 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, United Kingdom(J1.6)
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Analysis of lags and current collapse in source-field-plate AlGaN/GaN HEMTs
- Author(s)
  H. Hanawa, H. Onodera and K. Horio
- Organizer
  2012 International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] 高誘電率パシベーション膜を有するAlGaN/GaN HEMTの耐圧向上の解析
- Author(s)
  塙，中島，堀尾
- Organizer
  ２０１３年春季第６０回応用物理学関係連合講演会
- Place of Presentation
  神奈川大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs
- Author(s)
  H. Onodera and K. Horio
- Organizer
  2012 European Microwave Integrated Circuits Conference
- Place of Presentation
  Amsterdam, Netherland
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] ソースフィールドプレート構造AlGaN/GaN HEMTにおける電流コラプスの解析（２）
- Author(s)
  塙，小野寺，堀尾
- Organizer
  ２０１２年秋季第７３回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] Analysis of breakdown characteristics in small-sized field-plate AlGaN/GaN HEMTs
- Author(s)
  H. Onodera and K. Horio
- Organizer
  36th Workshop on Compound Semiconductor Devices and Integrated Circuits
- Place of Presentation
  Porquerolles, France
- Data Source
  KAKENHI-PROJECT-23560411
[Presentation] ソースフィールドプレート構造AlGaN/GaN HEMTのラグ現象，電流コラプス及び耐圧特性の解析
- Author(s)
  塙，小野寺，堀尾
- Organizer
  電子情報通信学会電子デバイス・マイクロ波研究会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23560411

Horio Kazushige 堀尾 和重

HORIO KAZUSHIGE 堀尾 和重

HORIO Kazushi 堀尾 和重

HORIO Kazushige 堀尾 和重

Research Projects

Research Products

Reduction in current collapse and enhancement of breakdown voltage in GaN-based HEMTsPrincipal Investigator

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Theoretical study on abnormal phenomena and degradation in GaN-based HEMTs and reuction method of themPrincipal Investigator

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Simulation of Widegap Semiconductor DevicesPrincipal Investigator

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Modeling of GaN-based Electron DevicesPrincipal Investigator

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Modeling of Nano-Scale Semiconductor DevicesPrincipal Investigator

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[Journal Article] Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer’s acceptor density2019

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NAID

Data Source

[Journal Article] Analysis of breakdown voltages in AlGaN/GaN HEMTs with low-k/high-k double passivation layers2019

Author(s)

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DOI

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[Journal Article] Enhancement of breakdown voltage in AlGaN/GaN HEMTs: Field plate plus high-k passivation layer and high acceptor density in buffer layer2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Analysis of reduction in lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer2018

Author(s)

Journal Title

Data Source

[Journal Article] Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN HEMTs with a high-k passivation layer2017

Author(s)

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[Journal Article] Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers2017

Author(s)

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[Journal Article] Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer2014

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[Journal Article] Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer2014

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[Journal Article] Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer2014

Author(s)

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Data Source

[Journal Article] Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer2014

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Horio Kazushige 堀尾和重

HORIO KAZUSHIGE 堀尾和重

HORIO Kazushi 堀尾和重

HORIO Kazushige 堀尾和重