Kishimoto Shigeru 岸本茂

… Alternative Names

Researcher Number	10186215
Other IDs
Affiliation (Current)	2019: 名古屋大学, 工学研究科, 助教
Affiliation (based on the past Project Information) *help	2012 – 2014: 名古屋大学, 工学(系)研究科(研究院), 助教 2010 – 2011: 名古屋大学, 工学研究科, 助教 2007 – 2011: 名古屋大学, 大学院・工学研究科, 助教 2005 – 2006: 名古屋大学, 大学院工学研究科, 助手 2005: Nagoya University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 … More
Review Section/Research Field	Principal Investigator 反応・分離工学 / Microdevices/Nanodevices Except Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / 物理計測・光学 / Science and Engineering / Electronic materials/Electric materials / 電子機器工学
Keywords	Principal Investigator カーボンナノチューブ / フレキシブルデバイス / AFM / 集積回路 / 国際情報交換 / 電気泳動 / 薄膜トランジスタ / 大気圧プラズマ / 酸素プラズマ Except Principal Investigator GaN HEMT … More

Fabrication of the flexible TFT using the atmospheric pressure PCVD growth nanotube and demonstration of MSI .Principal Investigator
- Principal Investigator
  
  KISHIMOTO Shigeru
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Nagoya University
Fabrication of normally-off GaN MISFETs for high-power application
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Study on carbon nanotube optoelectronics devices
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Fabrication and characterization of normally-off GaN HEMTs
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Fabrication and Characterization of GaN HEMTs with short gate length
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
微細パタン電極を用いた電気泳動によるカーボンナノチューブの吸着技術Principal Investigator
- Principal Investigator
  
  岸本茂
- Project Period (FY)
  2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  反応・分離工学
- Research Institution
  Nagoya University
Potential Profile Measurement of Semiconductor Devices Using Kelvin Probe Force Microscopy
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
Study of negative-ion kinetics in processing plasmas
- Principal Investigator
  
  KONO Akihiro
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Study of elementary processes for the lower laser level of the copper vapor laser
- Principal Investigator
  
  GOTO Toshio
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya University
銅スペクトルの分岐比を利用する光検出系の紫外分光感度較正法の研究
- Principal Investigator
  
  KONO Akihiro
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  物理計測・光学
- Research Institution
  Nagoya University
分光法による反応生プラズマ内の非発光ラジカル密度測定法の開発
- Principal Investigator
  
  GOTO Toshio
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
Study on ShortーPulsed UV Lasers Using New Longitudinal Excitation Techniques
- Principal Investigator
  
  GOTO Toshio
- Project Period (FY)
  1988 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子機器工学
- Research Institution
  Nagoya University

All 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation

[Journal Article] Effects of graphene thickness on the electrical properties of carbon2013
- Author(s)
  Masato Tamaoki, Shigeru Kishimoto, and Takashi Mizutani
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Pages: 33120-33120
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24510177
[Journal Article] Fabrication of Thin-Film Transistor Integrated Circuits on Flexible Substrate by Transfer Technique of Carbon Nanotube Network Using Poly(vinyl alcohol).2013
- Author(s)
  Satoshi Ishii, Mamoru Nishu, Shigeru Kishimoto, and Takashi Mizutani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Pages: 108001-108001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24510177
[Journal Article] Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer2013
- Author(s)
  S. Ishii, M. Tamaoki, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52, 035203 Issue: 3R Pages: 035203-035203
- DOI
  10.7567/jjap.52.035203
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24510177, KAKENHI-PROJECT-24760256
[Journal Article] Estimation of Height of Barrier Formed in Metallic Carbon Nanotube2012
- Author(s)
  Y. Okigawa, Y. Ohno, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2 Pages: 02BN01-02BN01
- DOI
  10.1143/jjap.51.02bn01
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum2012
- Author(s)
  H. Imaeda, S. Ishii, S. Kishimoto, Y. Ohno and T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2 Pages: 02BN06-02BN06
- DOI
  10.1143/jjap.51.02bn06
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical properties of the graphitic carbon contacts on carbon nanotube field effect transistors2012
- Author(s)
  M. Tamaoki, S. Kishimoto, Y. Ohno and T. Mizutani
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101, 033101 Pages: 1-3
- DOI
  10.1063/1.4737169
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24510177, KAKENHI-PROJECT-24681030
[Journal Article] Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition2011
- Author(s)
  S.Ishii, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gateoxide2011
- Author(s)
  Kishimoto, M. Kitamura
- Journal Title
  
  Solid State Electronics
  
  Volume: 62 Pages: 152-155
- DOI
  10.1016/j.sse.2011.04.017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Impact of fixed charges at interfaces on the operation of top-gate carbon nanotube field-effect transistors2011
- Author(s)
  Y.Ohno, N.Moriyama, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol
  
  Volume: (c)8 Pages: 567-569
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy2011
- Author(s)
  Y. Okigawa, S. Kishimoto, Y. Ohno, and T. Mizutani
- Journal Title
  
  Nanotechnol
  
  Volume: 22
- DOI
  10.1088/0957-4484/22/19/195202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Improvement in alignment of single-walled carbon nanotubes grown on quartz substrate2011
- Author(s)
  K.Hata, Y.Ohno, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol
  
  Volume: (c)8 Pages: 561-563
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors2011
- Author(s)
  S.Ishii, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Materials Express 1
  
  Pages: 285-290
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y. Nakashima, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, T. Mizutani
- Journal Title
  
  J. Nanosci. Nanotechnol 10
  
  Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO_2 gate insulator2010
- Author(s)
  S.Sugiura, Y.Hayashi, S.Kishimoto, T.Mizutani, et al.
- Journal Title
  
  Solid-State Electronics
  
  Volume: 54 Pages: 79-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Analysis of transient be havior of AlGaN/GaN MOSHFET2010
- Author(s)
  Y. Hayashi, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Pages: 1451-1456
- DOI
  10.1016/j.sse.2010.07.001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy2010
- Author(s)
  Y.Okigawa, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49, No.2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator2010
- Author(s)
  S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Pages: 79-83
- DOI
  10.1016/j.sse.2009.10.007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] AIGaN/GaN MOSHFETs with HfO2 gate oxide : A simulation study2010
- Author(s)
  Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
- Journal Title
  
  Solid State Electron.
  
  Volume: 54 Pages: 1367-1371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] AlGaN/GaN MOSHFETs with HfO_2 gate oxide : A simulation study2010
- Author(s)
  Y. Hayashi, S. Sugiura, S. Kishimoto, and T. Mizutani
- Journal Title
  
  Solid State Electron
  
  Volume: 54 Pages: 1367-1371
- DOI
  10.1016/j.sse.2010.03.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y.Nakashima, Y.Ohno, S.Kishimoto, M.Okochi, H.Honda, T.Mizutani
- Journal Title
  
  J.of Nanosci.and Nanotechnol.
  
  Volume: 10 Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  Y.Ono, S.Kishimoto, Y.Ohno, T.Mizutani
- Journal Title
  
  Nanotechnol.
  
  Volume: 21
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide -Semiconductor Inverters Realized by Controlling Interface Charges2010
- Author(s)
  N.Moriyama, Y.Ohno, K.Suzuki, S.Kishimoto, T.Mizutani
- Journal Title
  
  Appl.Phys.Exp.
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  Y. Ono, S. Kishimoto, Y. Ohno, and T. Mizutani
- Journal Title
  
  Nanotechnol
  
  Volume: 21
- DOI
  10.1088/0957-4484/21/20/205202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors2010
- Author(s)
  T. Mizutani, Y. Okigawa, Y. Ono, S. Kishimoto, and Y. Ohno
- Journal Title
  
  Applied Physics Express
  
  Volume: 3 Issue: 11 Pages: 115101-115101
- DOI
  10.1143/apex.3.115101
- ISSN
  1882-0778, 1882-0786
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy2010
- Author(s)
  Y. Okigawa, S. Kishimoto, Y. Ohno, T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.49,No.2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors2010
- Author(s)
  Y.Nakashima, Y.Ohno, S.Kishimoto, M.Okochi, H.Honda, T.Mizutani
- Journal Title
  
  J.Nanosci.Nanotechnol.
  
  Volume: 10 Pages: 3805-3809
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors2010
- Author(s)
  T.Mizutani, Y.Okigawa, Y.Ono, S.Kishimoto, Y.Ohno
- Journal Title
  
  Appl.Phys.Exp.
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Analysis of transient behavior of AlGaN/GaN MOSHFET2010
- Author(s)
  Y.Hayashi, S.Kishimoto, T.Mizutani
- Journal Title
  
  Solid State Electron.
  
  Volume: 54 Pages: 1451-1456
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360168
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto,Y. Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 106
- DOI
  10.1063/1.3234389
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T.Mizutani, H.Ohnaka, Y.Okigawa, S.Kishimoto, Y.Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition2009
- Author(s)
  T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto, Y. Ohno
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 106
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Potential Profile Measurement of Carbon Nanotube FETs Based on the Electrostatic Force Detection2008
- Author(s)
  Y. Okigawa, T. Umesaka, Y. Ohno, S. Kishimoto, T. Mizutani
- Journal Title
  
  NANO: Brief Reports and Reviews 3
  
  Pages: 51-54
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et. al
- Journal Title
  
  IEICE Trans. Electron. E91-C
  
  Pages: 1001-1003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1929-1931
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  IEICE Trans. Electron. E91-C
  
  Pages: 989-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer2008
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Journal Title
  
  phys. stat. sol. (c) Vol.5, No.6
  
  Pages: 1929-1931
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et al
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1923-1925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS2008
- Author(s)
  T. Mitsunaga, M. Kurouchi, S. Kishimoto, T. Mizutani, et. al
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 3032-3034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] High-density horizontally aligned growth of carbon nanotubes with Conanoparticles deposited by arc-discharge plasma method2008
- Author(s)
  D. Phokharatkul, Y. Ohno, H. Nakano, S. Kishimoto, T. Mizutani
- Journal Title
  
  Appl. Phys. Lett. 93
  
  Pages: 53112-53112
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide2008
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  phys. stat. sol.(c) Vol.5, No.6
  
  Pages: 1923-1925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Electrical properties of carbon nanotube FETs [invited paper]2008
- Author(s)
  T. Mizutani, Y. Ohno, S. Kishimoto
- Journal Title
  
  Proc. SPIE 7037
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant2007
- Author(s)
  Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani
- Journal Title
  
  phys. stat. sol.
  
  Volume: (b)244 Pages: 4002-4005
- DOI
  10.1002/pssb.200776124
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO_2 as gate oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Journal Title
  
  Electronics Letters Vol. 43, No. 17
  
  Pages: 952-953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Drain current DLTS of normally-off AlGaN/GaN HEMTs2007
- Author(s)
  T.Mizutani, A.Kawano, S.Kishimoto, K.Maeazawa
- Journal Title
  
  phys. stat. sol. (c) (印刷中)
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] AlGaN/GaN MIS-HEMTs with HfO2 Gate Insulator2007
- Author(s)
  A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, T. Mizutani, H. Ueno, T. Ueda, T. Tanaka
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2700-2703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, et. al.
- Journal Title
  
  Electronics Letters 43
  
  Pages: 952-953
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] AIGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation2007
- Author(s)
  T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 549-551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] Excitonic transition energies in single-walled carbon nanotubes: Depend ence on environmental dielectric constant2007
- Author(s)
  Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani
- Journal Title
  
  phys. stat. sol. (b) 244
  
  Pages: 4002-4005
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique2007
- Author(s)
  Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani
- Journal Title
  
  Nanotechnology
  
  Volume: 18
- DOI
  10.1088/0957-4484/18/41/415202
- Data Source
  KAKENHI-PLANNED-19054006
[Journal Article] AlGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation2007
- Author(s)
  T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
- Journal Title
  
  IEEE Electron Device Letters Vol. 28, No. 7
  
  Pages: 549-551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] A1GaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45,Part 1,No.4B
  
  Pages: 3368-3371
- Data Source
  KAKENHI-PROJECT-18206041
[Journal Article] AlGaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45 (to be published)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN HEMTs with inclined-gate-recess structure2006
- Author(s)
  Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45(to be published)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Deep levels in n-type AlGaN grown by hydride vapour phase epitaxy on sapphire characterized by deep level transient spectroscopy2005
- Author(s)
  J.Osaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.87
  
  Pages: 222112-222112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator2004
- Author(s)
  T.Sugimoto, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 279-282
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.84, No.12
  
  Pages: 2184-2186
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain Current DLTS of AlGaN-GaN MIS-HEMTs2004
- Author(s)
  T.Okino, M.Ochiai, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL vol.25, No.8
  
  Pages: 523-525
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.85,No.24
  
  Pages: 6028-6029
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.84, No.12
  
  Pages: 2184-2186
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain Current DLTS of AIGaN/GaN MIS-HEMTs2004
- Author(s)
  T.Okino, M.Ochiai, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL Vol.51, No.8
  
  Pages: 523-525
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS2004
- Author(s)
  T.Okino, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 271-274
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain Current DLTS of AlGaN/GaN MIS-HEMTs2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  IEEE EDL Vol.51,No.8
  
  Pages: 523-525
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator2004
- Author(s)
  T.Sugimoto, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184
  
  Pages: 279-282
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS2004
- Author(s)
  T.Okino, Y.Ohno, S.Kishimoto, K.Maezawa, J.Osaka, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184
  
  Pages: 271-274
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.85, No.24
  
  Pages: 6028-6029
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors2004
- Author(s)
  Y.Ohno, T.Nakao, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Applied Physics Letters Vol.84,No.12
  
  Pages: 2184-2186
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy2004
- Author(s)
  Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184 : Section 4
  
  Pages: 275-278
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184:Section 4
  
  Pages: 275-278
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy2004
- Author(s)
  K.Nakagami, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Appl.Phys.Lett. Vol.85, No.24
  
  Pages: 6028-6029
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors2003
- Author(s)
  T.Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part 1, No.2A
  
  Pages: 424-425
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2250-2253
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain current DLTS of AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, T.Okino, K.Kawada, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  phys.stat.sol.(a) Vol.200,No.1
  
  Pages: 195-198
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvin probe force microscopy2003
- Author(s)
  T.Xie, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2372-2375
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Study of Gate-Bias-Induced Current Collapse in AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, Y.Ohno, M.Akita, S.Kishimoto, K.Maezawa
- Journal Title
  
  IEEE Trans.Electron Devices Vol.50,No.10
  
  Pages: 2015-2020
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Study on Off-State Breakdown in AlGaN/GaN HEMTs2003
- Author(s)
  T.Nakao, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2335-2338
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of surface contact potential of AlGaN/GaN heterostructure and n-GaN by Kelvin probe force microscopy2003
- Author(s)
  T.Xie, S.Kishimoto, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2372-2375
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator2003
- Author(s)
  M.Ochiai, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part1, No.4B
  
  Pages: 2278-2280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Drain current DLTS of AlGaN/GaN HEMTs2003
- Author(s)
  T.Mizutani, T.Okino, K.Kawada, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  phys.stat.sol.(a) Vol.200, Is.1
  
  Pages: 195-198
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Study on Off-State Breakdown in AlGaN/GaN HEMTs2003
- Author(s)
  T.Nakao, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2335-2338
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator2003
- Author(s)
  M.Ochiai, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2278-2280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, No.4B
  
  Pages: 2250-2253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors2003
- Author(s)
  T.Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.2A
  
  Pages: 424-425
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Presentation] n型カーボンナノチューブ薄膜トランジスタのしきい値ばらつきの評価2014
- Author(s)
  安西智洋、岸本茂、大野雄高
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] 化学ドープn型カーボンナノチューブ薄膜トランジスタの伝導特性-大気の影響と安定性の向上-2014
- Author(s)
  安西智洋, 岸本茂, 大野雄高
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] プラスチック基板上におけるn型カーボンナノチューブ薄膜トランジスタの作製と評価2014
- Author(s)
  安西智洋, 岸本茂, 大野雄高
- Organizer
  電子情報通信学会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] Threshold voltage distribution of chemically doped n-type carbon nanotube thin-film transistors2014
- Author(s)
  安西智洋、岸本茂、大野雄高
- Organizer
  第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Place of Presentation
  名古屋大学
- Year and Date
  2014-09-05
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] ゲート先行プロセスによるAl2O3 AlGaN/GaN MOSHFET特性の改善2012
- Author(s)
  宮崎英志、岸本茂、水谷孝
- Organizer
  第59回春季応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaN MOSHFETの作製・評価2012
- Author(s)
  宮崎英志、岸本茂、水谷孝
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  一碧荘
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] i-GaN薄層挿入によるp-InGaN cap Normally-off型AlGaN/GaN HEMETのゲートリーク電流の低減2012
- Author(s)
  山田博之、岸本茂、水谷孝
- Organizer
  第59回春季応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments2011
- Author(s)
  E. Miyazaki, S. Kishimoto, and T. Mizutani
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Toba, Japan
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaNMOSFETの作製・評価2011
- Author(s)
  宮崎英志,合田祐司,岸本茂,水谷孝
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2011-05-20
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] (NH4) 2S処理によるAl2O3 AlGaN/GaN MOS FET特性の改善2011
- Author(s)
  宮崎英志,岸本茂,水谷孝
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments2011
- Author(s)
  E. Miyazaki, S. Kishimoto and T. Mizutani
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Gifu, Japan
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] NORMALLY-OFF MODE ALGAN/GAN HEMTS WITH P-INGAN CAP LAYER2011
- Author(s)
  T. Mizutani, X. Li, S. Kishimoto, and F. Nakamura
- Organizer
  WOCSDICE2011
- Place of Presentation
  Catania, Italy
- Year and Date
  2011-06-01
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] HfO2/AlGaN/GaN MOSFETの過渡応答解析2010
- Author(s)
  林慶寿,杉浦俊,岸本茂,水谷孝
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2010-01-14
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] THIN FILM TRANSISTORS USING PECVD-GROWN CARBON NANOTUBE NETWORK2010
- Author(s)
  T. Mizutani and S. Kishimoto
- Organizer
  2010A3 Symposium on Emerging Materials
- Place of Presentation
  Chon-ju, Korea
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Thin film transistors using PECVD-grown carbon nanotubes2010
- Author(s)
  T. Mizutani and S. Kishimoto
- Organizer
  The International Chemical Congress of Pasific Basin Societies
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2010-12-19
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Scanning gate microscopy measurement of CNT-FETs2009
- Author(s)
  Y.Okigawa, S.Kishimoto, Y.Ohno, T.Mizutani
- Organizer
  Tenth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Beijing, China
- Year and Date
  2009-06-21
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-Off Mode AlGaN/GaN HEMTs with p-InGaN Cap Layer2009
- Author(s)
  Xu Li, S. Kishimoto, F. Nakamura, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Heterostructure Microelectronics, 2009. 08. 25, Mielparque-Nagano, Nagano, Japan. Mielparque-Nagano, Nagano, Japan.
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] HfO2/AlGaN/GaN MOSFETのデバイスシミュレーション:過渡状態解2009
- Author(s)
  林慶寿,岸本茂,水谷孝
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学.
- Year and Date
  2009-09-07
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] AlGaN/GaN MOSFETs with Al2O3 Gate Oxide Deposited by Atomic Layer Deposition2009
- Author(s)
  E. Miyazaki, Y. Goda, S. Kishimoto, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Mielparque-Nagano, Nagano, Japan
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Control of carrier type in carbon nanotube FETs by high-k gate insulator2009
- Author(s)
  N.Moriyama, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  The 6th Korea-Japan Symposium on Carbon Nanotube
- Place of Presentation
  Culture Resort Festone, Ginowan, Okinawa JAPAN
- Year and Date
  2009-10-25
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Effects of HfO_2/AlGaN interface of HfO_2/AlGaN/GaN MOSFET studied by device simulation2009
- Author(s)
  Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
- Organizer
  8^<th> Topical Workshop on Heterostructure Microelectronics (TWHM 2009)
- Place of Presentation
  Mielparque-Nagano, Nagano, Japan
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Carrier-type conversion in carbon nanotube FETs by deposition of HfO22009
- Author(s)
  N.Moriyama, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  International Symposium on Carbon Nanotube Nanoelectronics
- Place of Presentation
  Matsushima, Japan
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Formation of catalyst nano-particles for growth of high-density horizontally aligned carbon nanotubes2009
- Author(s)
  K.Hata, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  International Symposium on Carbon Nanotube Nanoelectronics
- Place of Presentation
  Matsushima, Japan
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Effects of HfO2/AlGaN interface of HfO2/AlGaN/GaN MOSFET studied by device simulation2009
- Author(s)
  Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani
- Organizer
  8th Topical Workshop on Heterostructure Microelectronics
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PROJECT-21360168
[Presentation] Electrical characteristics of high-k gate insulator for carbon nanotube FETs2009
- Author(s)
  T.Kitamura, Y.Ohno, S.Kishimoto, T.Mizutani
- Organizer
  The 6th Korea-Japan Symposium on Carbon Nanotube
- Place of Presentation
  Culture Resort Festone, Ginowan, Okinawa JAPAN
- Year and Date
  2009-10-25
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Electrical properties of carbon nanotube FETs [invited]2008
- Author(s)
  T. Mizutani, Y. Ohno, S. Kishimoto
- Organizer
  The Seventh International Conference on Advanced Semiconductor Devices and Microsystems
- Place of Presentation
  Smolenice, Slovakia
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-performance n-type Carbon Nanotube FETs with Stability2008
- Author(s)
  N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Carbon Nanotube FETs with CNT Network Channel grown by Grid-inserted Plasma-enhanced CVD2008
- Author(s)
  Y. Ono, S. Kishimoto, Y. Ohno, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Influence of insulator deposition in carbon nanotube FETs2008
- Author(s)
  N. Moriyama, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  21st International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-density horizontally-aligned growth of carbon nanotubes for high-performance multi-channel nanotube FETs2008
- Author(s)
  Y. Ohno, D. Phokharatkul, H. Nakano, S. Kishimoto, T. Mizutani
- Organizer
  Ninth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition2008
- Author(s)
  T. Mizutani, S. Sugiura, S. Kishimoto, M. Kuroda, T. Ueda, T. Tanaka
- Organizer
  Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE 2008)
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Carbon Nanotube FETs with CNT Network Channel grown by Grid-inserted Plasma-enhanced CVD2008
- Author(s)
  Y. Ono, S. KishimotO, Y. Ohno, T. Mizutani
- Organizer
  21 st International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Carbon nanotube networks for thin-film transistors grown by grid-inserted plasma-enhanced chemical vapor deposition2008
- Author(s)
  T. Mizutani, S. Kishimoto, Y. Ono, Y. Ohno
- Organizer
  Ninth International Conference on the Science and Application of Nanotubes
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] High-density horizontally-aligned growth of carbon nanotubes for high-performance field-effect transistors2008
- Author(s)
  Y. Ohno, D. Phokharatkul, H. Nakano, S. Kishimoto, T. Mizutani
- Organizer
  2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Characterization of CNT-FET by Scanning Gate Microscopy2008
- Author(s)
  Y. Okigawa, Y. Ohno, S. Kishimoto, T. Mizutani
- Organizer
  The 5 th Japan-Korea Symposium on Carbon Nanotube (KJ 5)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PLANNED-19054006
[Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition2008
- Author(s)
  T. Mizutani, S. Sugiura, S. Kishimoto, et al
- Organizer
  Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOC SDICE 2008)
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Enhancement-Mode AlGaN/GaN HEMTs with Thin InGaN Cap Layer2007
- Author(s)
  M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
- Organizer
  7th Int'l Conference of Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] Normally-Off AlGaN/GaN MOSFETs with HfO2 Gate Oxide2007
- Author(s)
  S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
- Organizer
  7th Int'l Conference of Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-18206041
[Presentation] グラフェン電極CNT-FETにおけるグラフェン層厚さのI-V特性への影響
- Author(s)
  玉置聖人、岸本茂、水谷孝
- Organizer
  第43階フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Pd and Ti Overlayer Doping
- Author(s)
  石井聡、玉置聖人、岸本茂、水谷孝
- Organizer
  第43階フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-24510177
[Presentation] Pd, Ti被膜ドーピングによるCNTFETの伝導型制御
- Author(s)
  石井聡、玉置聖人、岸本茂、水谷孝
- Organizer
  第73回秋季応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-24510177

1. MIZUTANI Takashi (70273290)

# of Collaborated Projects: 6 results

# of Collaborated Products: 112 results
2. KONO Akihiro (40093025)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. OHNO Yutaka (10324451)

# of Collaborated Projects: 3 results

# of Collaborated Products: 70 results
4. GOTO Toshio (50023255)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. HIROMATSU Mineo (50199098)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. OSAKA Jiro (20377849)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. (MASAHITO Kurouchi (10452187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. HORI Masaru (80242824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. MAEZAWA Koichi (90301217)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SAWAKI Nobuhiko (70023330)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. 山田千樫 (70037266)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 広田栄治 (30011464)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 石井聡

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Kishimoto Shigeru 岸本 茂

KISHIMOTO Shigeru 岸本 茂

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Fabrication of the flexible TFT using the atmospheric pressure PCVD growth nanotube and demonstration of MSI .Principal Investigator

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微細パタン電極を用いた電気泳動によるカーボンナノチューブの吸着技術Principal Investigator

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[Journal Article] Effects of graphene thickness on the electrical properties of carbon2013

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[Journal Article] Fabrication of Thin-Film Transistor Integrated Circuits on Flexible Substrate by Transfer Technique of Carbon Nanotube Network Using Poly(vinyl alcohol).2013

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[Journal Article] Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer2013

Kishimoto Shigeru 岸本茂

KISHIMOTO Shigeru 岸本茂