ERYU Osamu 江龍修

… Alternative Names

江龍修エリュウオサム

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Researcher Number	10223679
Other IDs
External Links
Affiliation (Current)	2025: 藤田医科大学, その他部局等, 教授
Affiliation (based on the past Project Information) *help	2014 – 2016: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2012: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2008 – 2012: Nagoya Institute of Technology, 工学研究科, 教授 2004: Nagoya Institute of Technology, Faculty of Engineering, Assistant Professor, 電気情報, 助教授 1999 – 2001: 名古屋工業大学, 工学部, 助教授 … More 1997: Nagoya Institute of Technology, Dept.of Engineering, Assoc.professor, 工学部, 助教授 1996: 名古屋工業大学, 工学部・電気情報工学科, 講師 1993 – 1996: 名古屋工業大学, 工学部, 講師 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Production engineering/Processing studies / Nano/Microsystems / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / 機械工作・生産工学
Keywords	Principal Investigator レーザード-ピング / パルスレーザード-ピング / SAW modeling / Finite Element Modeling / SAW device / Chemical Bath Deposition / zinc oxide / ZnO / piezoelectric / graphene-based biosensor … More / SiC / ショットキー接触 / 単結晶刀具 / 切削加工 / 刃物センサ / 元素ドーピング / 切削・研削加工 / 劈開性制御 / ドーピング / 単結晶成長 / SiC単結晶刀具 / 希土類元素エルビウム(Er) / 半導体シリコン(Si) / Er発光 / 希士類元素Er / Er発光センター / 非熱平衡高速結晶成長 … More Except Principal Investigator MBE / SIMS / ohmic contact / excimer laser / laser doping / Silicon carbide / エキシマ・レーザー / Alアルミニウム / オーミック電極 / レーザー・プロセス / 炭化珪素 / Surface roughness / X-ray photo spectroscopy / Diamond single crystal / Silicon carbide single crystal / GaAs semiconductor / Quartz plate / TiO_2 photocatalyst / Polishing machine with UV rays / FT-IR分析 / 分子動力学シミュレーション / 研磨加工 / 酸化膜 / SiC単結晶 / 紫外光線 / TiO_2固体光触媒 / 表面粗さ / XPS分析 / ダイヤモンド単結晶 / SiC単結晶基板 / GaAs基板 / 石英基板 / TiO2光触媒 / 紫外光照射研磨装置 / photoluminescence / luminescence decay lifetime / solid phase epitaxial crystallization / ion co-implantation / oxygen / erbium / ESRセンター / 広がり抵抗 / フォトルミネセンス / 蛍光寿命 / 固相エピタキシャル成長 / イオン共注入 / 酸素 / エルビウム / Titanium / aluminum / Photo-responsivity / UV sensor / W タングステン / エキシマレーザー / Tiチタン / 分光感度 / UVセンサ / レーザー・ドーピング / laser ablation / ohmic electrode / Tungsten / Nickel / Aluminum / Niニッケル / 炭化ケイ素 / Wタングステン / Alアルミウニム / レーザー・ドープ Less

皮膚の湿度を解析するためのピエゾエレクトリックセンサの開発Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Nano/Microsystems
- Research Institution
  Nagoya Institute of Technology
Precision cutting of metal by the newly tools with the Schottky contactPrincipal Investigator
- Principal Investigator
  
  ERYU Osamu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Nagoya Institute of Technology
単結晶刀具の為のSiC結晶成長の研究Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Nagoya Institute of Technology
Development of ultra-precision processing technology of novel semiconductor substrate applied to devices with nano-structure
- Principal Investigator
  
  WATANABE Junji
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  機械工作・生産工学
- Research Institution
  Kumamoto University
Fabrication of Infrared Light Emitting Diodes on Er-doped Si Substrates
- Principal Investigator
  
  NAKASHIMA Kenshiro
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
Fabrication of UV-Sensitive SiC Diode by Laser Processing
- Principal Investigator
  
  NAKASHIMA Kentare
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
レーザード-ピング法による高品位赤外発光Si基板の形成Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
Low-Temperature Processing Technology of SiC Devices
- Principal Investigator
  
  NAKASHIMA Kenshiro
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
希土類元素添加赤外発光シリコン中の酸素原子挙動Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
希士類元素パルスレーザード-ピングSiの高温短時間熱処理による高輝度発光化Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
イオンビーム誘起高密度電子励起結晶構造変化Principal Investigator
- Principal Investigator
  
  江龍修
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Institute of Technology

All 2012 2011 2010 2009 2008 2005 2004 2002

All Journal Article Presentation Book

[Book] SiCパワーデバイス最新技術2010
- Author(s)
  江龍修, 他34名
- Total Pages
  314
- Publisher
  サイエンス&テクノロジー
- Data Source
  KAKENHI-PROJECT-22360061
[Book] SiCパワーデバイス最新技術2010
- Author(s)
  分担執筆江龍修他34名
- Total Pages
  314
- Data Source
  KAKENHI-PROJECT-22360061
[Journal Article] The atomic step induced by off angle CMP influences the electrical properties of the SiC surface2012
- Author(s)
  Yayoi Tanaka, Takao Kanda, Kazuyuki Nagatoshi, Masamiichi Yoshimura and Osamu Eryu
- Journal Title
  
  Silicon Carbide and Related Materials 2011
  
  Volume: Part 1 Pages: 569-572
- Data Source
  KAKENHI-PROJECT-22360061
[Journal Article]2009
- Author(s)
  発行者吉田隆, 分担執筆者江龍修, 他56名
- Journal Title
  
  次世代パワー半導体(株式会社エヌ・ティー・エス)
  
  Pages: 47-56
- Data Source
  KAKENHI-PROJECT-20656025
[Journal Article] Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs2009
- Author(s)
  T.Ohshima, S.Onoda, T.Kamada, K.Hotta, K.Kawata, O.Eryu
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 781-784
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656025
[Journal Article] Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing2009
- Author(s)
  K.Hotta, K.Hirose, Y.Tanaka, K.Kawata, O.Eryu
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 823-826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656025
[Journal Article] High precision chemical mechanical polishing of highly-boron-doped Si wafer used for epitaxial substrate2005
- Author(s)
  J.Watanabe, G.Yu, O.Eryu, I.Koshiyama, K.Izumi, M.Umeno, K.Nakashima
- Journal Title
  
  Precision Engineering Vol.29 No.2
  
  Pages: 151-156
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205026
[Journal Article] High precision chemical mechanical polishing of highly-boron-doped Si wafer used for epitaxial substrate2005
- Author(s)
  J.Watanabe, G.Yu, O.Eryu, I.Koshiyama, K.Izumi, M.Umeno, K.Nakashima
- Journal Title
  
  Precision Engineering 29巻2号
  
  Pages: 151-156
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205026
[Journal Article] SiC単結晶の固体触媒応用研磨技術の検討2004
- Author(s)
  渡邉純二, 横峯和幸, 川向尚, 峠睦, 黒田規敬, 江龍修
- Journal Title
  
  2004年度砥粒加工学会学術講演会講演論文集
  
  Pages: 69-70
- Data Source
  KAKENHI-PROJECT-14205026
[Journal Article] 加工表面の分析評価に基づいたSiC半導体の加工メカニズムの研究2002
- Author(s)
  渡邉純二, 黒田規敬, 藤本誠, 江龍修
- Journal Title
  
  2002年度精密工学会秋季大会学術講演会講演論文集
  
  Pages: 140-140
- NAID
  130007001948
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205026
[Journal Article] Evaluation of Surfaces of Single SiC Crystal Polished with Various Kinds of Particles2002
- Author(s)
  J.Watanabe, M.Fujimoto, Y.Matsumoto, N.Kuroda, O.Eryu
- Journal Title
  
  Proceedings of the Fifth International Symposium on Advances in Abrasive Technology
  
  Pages: 175-180
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205026
[Presentation] SiCの加工技術2012
- Author(s)
  江龍　修
- Organizer
  応用物理学会第21回 SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪市中央公会堂
- Invited
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] 金属加工製品の上位価値を創成する工具イノベーション2012
- Author(s)
  江龍修
- Organizer
  日本MOT学会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2012-03-01
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SiCの加工技術2012
- Author(s)
  江龍修
- Organizer
  応用物理学会第21回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪市中央公会堂
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] 省エネルギー、省電力のための半導体デバイスの先端加工技術半導体デバイス加工総論2011
- Author(s)
  江龍修
- Organizer
  日本機械学会
- Place of Presentation
  日本機械学会会議室(東京)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] 省エネルギー、省電力のための半導体デバイスの先端加工技術、半導体デバイス加工総論2011
- Author(s)
  江龍修
- Organizer
  日本機械学会招待講演
- Place of Presentation
  日本機械学会会議室
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SiC加工表面の非接触評価2011
- Author(s)
  江龍修
- Organizer
  応用物理学会
- Place of Presentation
  京都テルサ大会議室(招待講演)
- Year and Date
  2011-06-23
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SiC加工表面の非接触評価2011
- Author(s)
  江龍修
- Organizer
  応用物理学会表面分科会招待講演
- Place of Presentation
  京都テルサ大会議室
- Year and Date
  2011-06-23
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SiCの研磨技術-原子・電子から見た表面2010
- Author(s)
  江龍修
- Organizer
  砥粒加工学会
- Place of Presentation
  新東工業(株)豊川製作所
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SBDによる表面原子ステップが及ぼす電気特性評価2010
- Author(s)
  田中弥生, 神田隆生, 永利一幸, 江龍修
- Organizer
  応用物理学会関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] パワーデバイス用SiCの最先端研磨技術とその評価技術2010
- Author(s)
  江龍修
- Organizer
  砥粒加工学会
- Place of Presentation
  ニコン相模原製作所
- Year and Date
  2010-12-08
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] SiCの研磨技術一原子・電子から見た表面2010
- Author(s)
  江龍修
- Organizer
  砥粒加工学会招待講演
- Place of Presentation
  新東工業(株)豊川製作所
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] パワーデバイス用SiCの最先端研磨技術とその評価技術2010
- Author(s)
  江龍修
- Organizer
  砥粒加工学会招待講演
- Place of Presentation
  ニコン相模原製作所
- Year and Date
  2010-12-08
- Data Source
  KAKENHI-PROJECT-22360061
[Presentation] 電気的特性に及ぼす表面原子ステップの影響2009
- Author(s)
  田中弥生, 神田隆生, 永利一幸, 江龍修
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] Siウエハを用いたSiC基板のCMPに及ぼすOの影響2009
- Author(s)
  松嶋拓矢, 永利一幸, 江龍修
- Organizer
  応用物理学会SiC及び関連ワイドバンドギャップ半導体研究会
- Place of Presentation
  神戸国際会議場
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] 光励起を用いたSiC加工表面の非接触評価2009
- Author(s)
  西尾和真, 永利一幸, 江龍修
- Organizer
  応用物理学会SiC及び関連ワイドバンドギャップ半導体研究会
- Place of Presentation
  神戸国際会議場
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] 表面原子ステップがSBD電気的特性に与える影響2009
- Author(s)
  田中弥生, 神田隆生, 永利一幸, 江龍修
- Organizer
  応用物理学会SiC及び関連ワイドバンドギャップ半導体研究会
- Place of Presentation
  神戸国際会議場
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] 単結晶Siウエハを用いたSiC基板のCMP加工2009
- Author(s)
  松嶋拓矢, 永利一幸, 江龍修
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20656025
[Presentation] 中小企業との連携による新素材(SiC)切削ツールのイノベーション2008
- Author(s)
  江龍修
- Organizer
  MOT国際シンポジウム
- Place of Presentation
  名古屋工業大学
- Year and Date
  2008-11-28
- Data Source
  KAKENHI-PROJECT-20656025

1. NAKASHIMA Kenshiro (80024305)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. PERFETTI CLAIRE

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. ABE Koji (30314074)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. WATANABE Junji (40281076)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. TOUGE Mutsumi (00107731)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. MATSUMOTO Yasumichi (80114172)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
7. KURODA Noritaka (40005963)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
8. OBUCHI Yoshifumi (10176993)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SHIMADA Shoichi (20029317)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 菱田有二

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. HISHIDA Y

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ERYU Osamu 江龍 修

江龍 修 エリュウ オサム

Research Projects

Research Products

Co-Researchers

皮膚の湿度を解析するためのピエゾエレクトリックセンサの開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Precision cutting of metal by the newly tools with the Schottky contactPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

単結晶刀具の為のSiC結晶成長の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of ultra-precision processing technology of novel semiconductor substrate applied to devices with nano-structure

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of Infrared Light Emitting Diodes on Er-doped Si Substrates

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of UV-Sensitive SiC Diode by Laser Processing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

レーザード-ピング法による高品位赤外発光Si基板の形成Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Low-Temperature Processing Technology of SiC Devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

希土類元素添加赤外発光シリコン中の酸素原子挙動Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

希士類元素パルスレーザード-ピングSiの高温短時間熱処理による高輝度発光化Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

イオンビーム誘起高密度電子励起結晶構造変化Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] SiCパワーデバイス最新技術2010

Author(s)

Total Pages

Publisher

Data Source

[Book] SiCパワーデバイス最新技術2010

Author(s)

Total Pages

Data Source

ERYU Osamu 江龍修

江龍修エリュウオサム