SUDA Yoshiyuki 須田良幸

Researcher Number	10226582
Other IDs
External Links
Affiliation (Current)	2025: 東京農工大学, 工学(系)研究科(研究院), 名誉教授
Affiliation (based on the past Project Information) *help	2018 – 2021: 東京農工大学, 工学(系)研究科(研究院), 名誉教授 2011 – 2017: 東京農工大学, 工学(系)研究科(研究院), 教授 2010 – 2012: 東京農工大学, 大学院・工学研究院, 教授 2008 – 2009: Tokyo University of Agriculture and Technology, 大学院・共生科学技術研究院, 教授 2007: Tokyo University of Agriculture and Technology, 総合情報メディアセンター, 教授 … More 2004: Tokyo University of Agriculture & Technology, Information Media Center, Professor, 総合情報メディアセンター, 教授 2002 – 2003: 東京農工大学, 総合情報メディアセンター, 教授 1995 – 2001: 東京農工大学, 工学部, 助教授 1992 – 1993: 東京農工大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Electronic materials/Electric materials / Electronic materials/Electric materials / 電子材料工学 Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / 電子デバイス・機器工学 / Electronic materials/Electric materials / 電子材料工学
Keywords	Principal Investigator PVCR / RTD / SiGe / 高速デバイス / 表面泳動 / 電子デバイス・機器 / 不揮発性メモリ / 半導体メモリ / High Speed Device / 歪緩和 … More / 共鳴トンネルデバイス / digital epitaxy / laser-induced excitation / disilane / silicon / atomic layr epitaxy / 反射型高速電子線回折 / レーザー励起 / ジシラン / シリコン / 原子層エピタキシ- / サファクタント / ゲルマニウム / エピタキシー / 仮想基板 / MIS / RRAM / 集積回路 / 共鳴トンネルダイオード / 量子エレクトロニクス / 電子デバイイス・機器 / Multiple Barrier / Quantum Well / Strain Relaxation / Resonant Tunneling Device / 多重障壁 / 量子井戸 / Triple Barrier / Relaxed Buffer / Strain Relief / Resonant Tunneling Diode / PVR / 3重障壁 / バッファー層 / migration / self-limiting / epitaxy / ディジタルエピタキシ- / マイグレーション / 自己停止 / エピタキシ- / surface excitation reaction / surface migration / electron-beam-induced excitation / ディジタル成長 / 表面励起 / 原子層エピキタキシー / ディジタルエピタキシー / 原子層エピタキシー / 表面励起反応 / デジタルエピタキシ- / 電子線励起 / 界面電位 / 先端機能デバイス / 界面準位 / ＳｉＣ / クロスポイント型配列 / ＰＮダイオード / 抵抗変化型メモリ / ヘテロ接合 / 90度転位 / 島状成長 / 緩和 / 平坦化 / 歪 / Ｇｅ成長 / ヘテロ成長 / SK成長 / Ge / 評価技術 / 作成 / 不揮発性 / メモリ / トンネル効果 / 抵抗変化型 / 半導体超微細化 / SiC / フラッシュメモリ / 電子トラップ / 酸化膜 / 抵抗変化型RAM / 3C-SiC / 不揮発性RAM / 抵抗変化型ランダムアクセスメモリ / シリコンカーバイド … More Except Principal Investigator visible luminescence / quantum confinement / シリコン光集積 / シリコン発光ダイオード / 可視発光 / 量子閉じ込め効果 / 多孔質シリコン / 量子効果デバイス / 半導体 / RTD / ラマン分光法 / 結晶成長 / ヘテロ接合 / スパッタエピタキシー / Sn析出 / Sn拡散 / スパッタエピタキシー法 / GeSn / GeSiSn / photonic integration / optical wave guide / quantum efficiency / silicon LED / nanocrystalline silicon / porous silicon / 量子効率 / 光導波路 / 発光効率 / シリコンナノクリスタル / ポーラスシリコン / ballistic electron emission / bistable memory / Si photonic integration / Si light-emiting diode / Si nanocrystallites / porous Si / シリコン発光素子 / コールドカソード / 弾道電子放出 / 双安定メモリ / シリコンナノクリスタリット / 量子サイズ効果 / シリコン微粒子 / 陽極化成 / エレクトロルミネッセンス / フオトルミネッセンス Less

Development of high-frequency devices using GeSiSn/GeSn quantum wells
- Principal Investigator
  
  TSUKAMOTO TAKAHIRO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Electro-Communications
High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering methodPrincipal Investigator
- Principal Investigator
  
  Suda Yoshiyuki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
Development of memory diode and its application to densest array memoryPrincipal Investigator
- Principal Investigator
  
  Suda Yoshiyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy MethodPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy MethodPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
High-Density New Two-Terminal Resistive Nonvolatile Memory Using SiC and Its Integration TechnologyPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
High-Density New Two-Terminal Resistive Nonvolatile MemoryUsing Silicon CarbidePrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology
Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated TechnologyPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  National University Corporation Tokyo University of Agriculture and Technology
Si/SiGe Multiple-Quantum-well Resonant Tunneling DevicePrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo University of Agriculture & Technology
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
- Principal Investigator
  
  KOSHIDA Nobuyoshi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo University of Agriculture & Technology
Sub-Atomic-Layr Epitaxy of Si/Ge SemiconductorsPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
- Principal Investigator
  
  KOSHIDA Nobuyoshi
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
多孔質シリコンの可視域発光に関する基礎的研究
- Principal Investigator
  
  KOSHIDA Nobuyoshi
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo University of Agriculture and Technology
Study on electron-beam-induced excitation on Si surfacesPrincipal Investigator
- Principal Investigator
  
  SUDA Yoshiyuki
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo University of Agriculture and Technology

[Book] 日本化学会編実験化学講座第27巻2004
- Author(s)
  須田良幸他
- Total Pages
  465
- Publisher
  丸善
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024
- Author(s)
  Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 9
- DOI
  10.1063/5.0180934
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245
[Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 125 Issue: 25 Pages: 14117-14121
- DOI
  10.1021/acs.jpcc.1c03567
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Thin Solid Films
  
  Volume: 726 Pages: 138646-138646
- DOI
  10.1016/j.tsf.2021.138646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020
- Author(s)
  Tsukamoto Takahiro、Kurihara Shota、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 41-46
- DOI
  10.1007/s13391-019-00185-0
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 9-13
- DOI
  10.1007/s13391-019-00179-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245, KAKENHI-PROJECT-19K04487
[Journal Article] Crystallinity control of SiC grown on Si by sputtering method2017
- Author(s)
  Ryosuke Watanabe, Takahiro Tsukamoto, Koichi Kamisako, Yoshiyuki Suda
- Journal Title
  
  J. Crystal Growth
  
  Volume: 463 Pages: 67-71
- DOI
  10.1016/j.jcrysgro.2017.01.042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiOx2016
- Author(s)
  Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 12 Pages: 124103-124103
- DOI
  10.7567/jjap.55.124103
- NAID
  210000147298
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/AlOx/n-SiC/n-Si構造の不揮発性pnメモリダイオードと低電圧動作2016
- Author(s)
  土屋充沙、塚本貴弘、須田良幸
- Journal Title
  
  信学技報
  
  Volume: 116 Pages: 17-20
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method2015
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Journal Title
  
  Journal of Materials Science
  
  Volume: 50 Issue: 12 Pages: 4366-4370
- DOI
  10.1007/s10853-015-8990-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630123, KAKENHI-PROJECT-25820121
[Journal Article] p-Cu2O/SiOx/n-SiC構造pnメモリダイオードの低温形成2014
- Author(s)
  山下敦史、塚本貴広、須田良幸
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 43-47
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors2014
- Author(s)
  Atsushi Yamashita, Yoshihiko Sato, Takahiro Tsukamoto, and Yoshiyuki Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 7 Pages: 074203-074203
- DOI
  10.7567/apex.7.074203
- NAID
  210000137173
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289099
[Journal Article] Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method2013
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Journal Title
  
  Applied Physics Letter
  
  Volume: 103 Issue: 17 Pages: 172103-172103
- DOI
  10.1063/1.4826501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630123, KAKENHI-PROJECT-25820121
[Journal Article] Electric-field-induced Al2O3/3C-SiC Resistance Memory2012
- Author(s)
  Nobuo Yamaguchi, Yoshiyuki Suda
- Journal Title
  
  Mater.Res.Soc.Proc.
  
  Volume: (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices2012
- Author(s)
  Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa and Manabu Kanazawa
- Journal Title
  
  Procedia Engineering
  
  Volume: 36 Pages: 396-403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656210
[Journal Article] Ge Flat Layer Growth on Heavily Phos- phorus-Doped Si (001) by Sputter Epitaxy2012
- Author(s)
  Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656210
[Journal Article] Al_2O_3/3C-SiC/n-Si Nonvolatile Resistance Memory2012
- Author(s)
  Nobuo Yamaguchi and Yoshiyuki Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51(assepted)
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] Electric-Field-Induced Al_2O_3/3C-SiC Resistance Memory2012
- Author(s)
  Nobuo Yamaguchi and Yoshiyuki Suda
- Journal Title
  
  Mater. Res. Soc. Proc.
  
  Volume: 1430
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy2012
- Author(s)
  Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 5R Pages: 055502-055502
- DOI
  10.1143/jjap.51.055502
- NAID
  210000140614
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656210
[Journal Article] Oxide Structure Dependence of SiO_2/SiO_x/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics2012
- Author(s)
  Yuichiro Yamaguchi, Masatsugu Shouji, and Yoshiyuki Suda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: (accepted)
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy2011
- Author(s)
  Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Harold M. H. Chong, Hiroshi Mizuta, and Yoshiyuki Suda
- Journal Title
  
  Appl. Phys.
  
  Volume: Express 4 Pages: 25701-25701
- NAID
  10027783571
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy2011
- Author(s)
  H.Hanafusa, N.Hirose, A.Kasamatsu, T.Mimura, T.Matsui, H.M.H.Chong, H.Mizuta, Y.Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10027783571
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360164
[Journal Article] 3C-SiC MIS抵抗変化型不揮発性半導体メモリー素子2008
- Author(s)
  須田良幸
- Journal Title
  
  vol.77
  
  Pages: 1107-1110
- NAID
  10024192381
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360156
[Journal Article] SiO_x/3C-SiC/Si MIS Nonvolatile Resistance Memory2008
- Author(s)
  Y. Suda, M. Shouji, and K. TAKADA
- Journal Title
  
  Appl. Phys. Express vol.1
  
  Pages: 714011-714013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360156
[Journal Article] Si0/3C-SiC/Si MIS Nonvolatile Resistance Memory2008
- Author(s)
  Y. Suda, M. Shouji, K. Takada
- Journal Title
  
  Applied Physics Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360156
[Journal Article] 3C-SiC MIS抵抗変化型不揮発性半導体メモリー素子2008
- Author(s)
  須田良幸
- Journal Title
  
  応用物理 77
  
  Pages: 11071110-11071110
- NAID
  10024192381
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360156
[Journal Article] Si_<1-x>Ge_x Alloy Semiconductor2004
- Author(s)
  Y.Suda
- Journal Title
  
  Functional Materials, Experimental Chemistry Series(ed by T.Osaka, T.Honma and Y.Ito)(Maruzen, Tokyo)(in Japanese) vol.27
  
  Pages: 68-79
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Ge Dot Array Formation Using Small Convex Position Anchors2004
- Author(s)
  D.Kitayama, T.Yoshizawa, Y.Suda
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 3822-3824
- NAID
  10013275931
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Artificially Size- and Position-Controlled Ge Dot Formation Using Patterned Si2004
- Author(s)
  Y.Suda, S.Kaechi, D.Kitayama, T.Yoshizawa
- Journal Title
  
  Thin Solid Films 464-465巻
  
  Pages: 190-193
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Artificially Size-and Position-Controlled Ge Dot Formation Using Patterned Si2004
- Author(s)
  Y.Suda, S.Kaechi, D.Kitayama, T.Yoshizawa
- Journal Title
  
  Thin Solid Films vol.464-465
  
  Pages: 190-193
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Si/Si_<1-x>Ge_x DW RTD Formed with New Triple-Layer Buffer2004
- Author(s)
  H.Maekawa, M.Shoji, Y.Suda
- Journal Title
  
  Materials Science in Semiconductor Processing 8
  
  Pages: 417-421
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Artificially Size- and Position-Controlled Ge Dot Formation Using Patterned Si2004
- Author(s)
  Y.Suda, S.Kaechi, D.Kitayama, T.Yoshizawa
- Journal Title
  
  Thin Solid Films 464-465
  
  Pages: 190-193
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Ge Dot Array Formation Using Small Convex Position Anchors2004
- Author(s)
  D.Kitayama, T.Yoshizawa, Y.Suda
- Journal Title
  
  Jpn.J.Appl.Phys. vol.43
  
  Pages: 3822-3824
- NAID
  10013275931
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Si/Si_<1-x>Ge_x DW RTD Formed with New Triple-Layer Buffer2004
- Author(s)
  H.Maekawa, M.Shoji, Y.Suda
- Journal Title
  
  Materials Science in Semiconductor Processing, vol.8
  
  Pages: 417-421
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Ge Dot Array Formation Using Small Convex Position Anchors2004
- Author(s)
  D.Kitayama, T.Yoshizawa, Y.Suda
- Journal Title
  
  Jpn.J.Appl.Phys. 43巻
  
  Pages: 3822-3824
- NAID
  10013275931
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Si/Si_<1-x>Ge_x DW RTD Formed with New Triple-Layer Buffer2004
- Author(s)
  H.Maekawa, M.Shoji, Y.Suda
- Journal Title
  
  Materials Science in Semiconductor Processing 8巻
  
  Pages: 417-421
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Artificially size - and position - controlled Ge dot formation using patterned Si2003
- Author(s)
  Y.Suda, S.Kaechi, D.Kitayama, T.Yoshizawa
- Journal Title
  
  Thin Solid Films (In press)
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Ge Dot Array Formation Using Small Convex Position Anchors2003
- Author(s)
  D.Kitayama, Y.Suda, T.Yoshizawa
- Journal Title
  
  Jpn.J.Appl.Phys. (In press)
- NAID
  10013275931
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Si Submonolayer and Monolayer Digital Growth Operation Technique Using Si_2H_6 as Atomically Controlled Growth Nanotechnology2003
- Author(s)
  Y.Suda, N.Hosoya, K.Miki
- Journal Title
  
  Appl.Surf.Sci. 216
  
  Pages: 424-430
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Si Submonolayer and Monolayer Digital Growth Operation Technique Using Si_2H_6 as Atomically Controlled Growth Nanotechnology2003
- Author(s)
  Y.Suda, N.Hosoya, K.Miki
- Journal Title
  
  Appl.Surf.Sci. vol.216
  
  Pages: 424-430
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] New Cu Fine Line Direct Drawing Method Using a STM-Electroplating (EP-STM) Combination System2003
- Author(s)
  Y.Suda, H.Tanaka, M.Sekiguchi
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 4887-4889
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Migration-induced Ge dot formation2003
- Author(s)
  S.Kaechi, D.Kitayama, Y.Suda
- Journal Title
  
  Extended Abstracts of International Conferrence on Solid State Devices and Materials
  
  Pages: 76-77
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] New Si Atomic-Layer-Controlled Growth Technique with Thermally-Cracked Hydride Molecule2002
- Author(s)
  Y.Suda, N.Hosoya, D.Shiratori
- Journal Title
  
  Journal of Crystal Growth Vol.237-239
  
  Pages: 1404-1409
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Si1-xGex/Si Triple Barrier RTD with a High Peak-to-Valley Ratio of ≧ 180 at RT2002
- Author(s)
  Y.Suda
- Journal Title
  
  Electrochemical Society Proceedings Volume vol.PV 2002-9
  
  Pages: 47-60
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] Si_<1-x>Ge_x/Si Triple Barrier RTD with a High Peak-to-Valley Ratio of ≧ 180 at RT2002
- Author(s)
  Y.Suda
- Journal Title
  
  Elctrochemical Society Proceedings Volume PV2002-9
  
  Pages: 47-60
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Sil-xGex/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer2002
- Author(s)
  Y.Suda, A.Meguro, H.Maekawa
- Journal Title
  
  Elctrochemical Society Proceedings Volume
  
  Pages: 118-127
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] New Si Atomic-Layer-Controlled Growth Technique with Thermally-Cracked Hydride Molecule2002
- Author(s)
  Y.Suda, N.Hosoya, D.Shiratori
- Journal Title
  
  Journal of Crystal Growth vol.237-239
  
  Pages: 1404-1409
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Si_<1-x>Ge_x/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer2002
- Author(s)
  Y.Suda, A.Meguro, H.Maekawa
- Journal Title
  
  Elctrochemical Society Proceedings Volume PV2002-17
  
  Pages: 118-127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Journal Article] High PVCR Si1-xGex/Si Electron-Tunneling RTD Using Multiple-Well and Annealed Thin Double-Layer Buffer2002
- Author(s)
  Y.Suda, A.Meguro, H.Maekawa
- Journal Title
  
  Electrochemical Society Proceedings Volume vol.PV 2002-17
  
  Pages: 118-127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Patent] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022
- Inventor(s)
  須田良幸、塚本貴広、本橋叡、出蔵恭平、大久保克己、八木拓馬、笠松章史、広瀬信光、松井敏明
- Industrial Property Rights Holder
  東京農工大学、情報通信研究機構
- Industrial Property Rights Type
  特許
- Acquisition Date
  2022
- Overseas
- Data Source
  KAKENHI-PROJECT-17H03245
[Patent] 半導体メモリ装置およびその製造方法2011
- Inventor(s)
  須田良幸、山口伸雄
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2011-176599
- Filing Date
  2011-08-12
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] 半導体メモリ装置及びその製造方法2011
- Inventor(s)
  須田良幸、山口伸雄
- Industrial Property Rights Holder
  東京農工大
- Filing Date
  2011-12-06
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] Semiconductor memory device2011
- Inventor(s)
  須田良幸
- Industrial Property Rights Holder
  東京農工大学
- Acquisition Date
  2011-10-04
- Overseas
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] 半導体メモリ装置及びその製造方法2010
- Inventor(s)
  須田良幸、野村秋成
- Industrial Property Rights Holder
  東京農工大
- Filing Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] 半導体メモリ装置及びその製造方法2010
- Inventor(s)
  須田良幸、野村彬成
- Industrial Property Rights Holder
  東京農工大学
- Filing Date
  2010-09-06
- Overseas
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] 半導体メモリ装置、及びその製造方法2009
- Inventor(s)
  須田良幸野村彬成
- Industrial Property Rights Holder
  東京農工大
- Filing Date
  2009-03-13
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置, 及びその製造方法2009
- Inventor(s)
  須田良幸、野村彬成
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2009-061883
- Filing Date
  2009-03-13
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2008
- Inventor(s)
  須田良幸、太田豊
- Industrial Property Rights Holder
  東京農工大学, 三洋半導体
- Filing Date
  2008-09-08
- Overseas
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2008
- Inventor(s)
  須田良幸、太田豊
- Industrial Property Rights Holder
  東京農工大学, 三洋半導体
- Filing Date
  2008-09-08
- Overseas
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2008
- Inventor(s)
  須田良幸太田豊
- Industrial Property Rights Holder
  東京農工大三洋半導体
- Filing Date
  2008-09-08
- Overseas
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] SiC不揮発性メモリの製造方法2008
- Inventor(s)
  須田良幸山口祐一郎
- Industrial Property Rights Holder
  東京農工大
- Filing Date
  2008-08-25
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2008
- Inventor(s)
  須田良幸太田
- Industrial Property Rights Holder
  東京農工大三洋半導体
- Filing Date
  2008-09-08
- Overseas
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] Semiconductor memory device2008
- Inventor(s)
  須田良幸、山口伸雄
- Industrial Property Rights Holder
  東京農工大学
- Filing Date
  2008-09-08
- Acquisition Date
  2011-10-04
- Overseas
- Data Source
  KAKENHI-PROJECT-21360164
[Patent] SiC不揮発性メモリの製造方法2008
- Inventor(s)
  須田良幸、山口祐一郎
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2008-215746
- Filing Date
  2008-08-25
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2007
- Inventor(s)
  須田良幸, 大田豊
- Industrial Property Rights Holder
  東京農工大三洋半導体
- Industrial Property Number
  2007-310663
- Filing Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2007
- Inventor(s)
  須田良幸, 大田豊
- Industrial Property Rights Holder
  東京農工大三洋半導体
- Industrial Property Number
  2007-310662
- Filing Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2007
- Inventor(s)
  須田良幸、太田豊
- Industrial Property Rights Holder
  東京農工大学, 三洋半導体
- Industrial Property Number
  2007-310663
- Filing Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体メモリ装置2007
- Inventor(s)
  須田良幸、太田豊
- Industrial Property Rights Holder
  東京農工大学, 三洋半導体
- Industrial Property Number
  2007-310662
- Filing Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-19360156
[Patent] 半導体装置の製造方法2005
- Inventor(s)
  須田良幸, 北山大祐, 高橋陽一
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2005-092673
- Filing Date
  2005-03-28
- Data Source
  KAKENHI-PROJECT-14350179
[Patent] 半導体薄膜製造方法2004
- Inventor(s)
  須田良幸
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2004-253128
- Filing Date
  2004-08-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350179
[Patent] 半導体薄膜製造方法2004
- Inventor(s)
  須田良幸
- Industrial Property Rights Holder
  東京農工大学
- Industrial Property Number
  2004-253128
- Filing Date
  2004-08-31
- Data Source
  KAKENHI-PROJECT-14350179
[Presentation] スパッタエピタキシー法により作製したGe/GeSnヘテロ構造におけるSn拡散2022
- Author(s)
  塚本貴広, 池野憲人, 広瀬信光, 笠松章史, 松井敏明, 須田良幸
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] Direct growth of patterned Ge on insulators using graphene2021
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  ISSS-9
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] グラフェンを用いた絶縁膜上におけるGe選択形成技術2021
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピタキシー法を用いたGe/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピキシー法を用いた Ge/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法を&用いたSiGe HEMTの製造技術と特性制御2019
- Author(s)
  青柳耀介、本橋叡、出蔵恭平、大久保克己、広瀬信光、笠松章史、松井敏明、塚本貴広、須田良幸
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Minoru Wakiya, Kazuaki Haneda, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  E-MRS Conference Fall meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Shota Kurihara, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  The 17th E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピタキシー法を用いた完全圧縮歪SiGe薄膜形成技術2019
- Author(s)
  野崎翔太、青柳耀介、広瀬信光、笠松章史、松井敏明、須田良幸
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] 格子定数整合GeSiSn/Ge系p-RTDの試作2018
- Author(s)
  栗原祥太、脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法を用いたSi/SiGe 正孔トンネル型RTDの作製技術と特性制御2018
- Author(s)
  脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法で作製した高電流密度のSi/SiGe 正孔トンネル型RTD2018
- Author(s)
  脇谷実、塚本貴広、須田良幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Formation of Lattice-Matched GeSiSn/Ge Quantum Well Structure by Sputter Epitaxy2017
- Author(s)
  Takahiro Tsukamoto, Kazuaki Haneda, Hiroto Iwamori, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] p-Cu2O/SiNx/n-SiC/n-Si構造の抵抗変化型不揮発性メモリダイオード2017
- Author(s)
  素村晃浩, 塚本貴広, 加藤格, 雑賀章浩, 須田良幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県、横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Effects of low-temperature GeSn buffer layer on Sn surface segregation during GeSn epitaxial growth2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  10th. International Conference On Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  Energy Materials Nanotechnology Meeting on Epitaxy
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] SiCxOyおよびSiOx電子捕獲層を用いた不揮発性pnメモリダイオードの特性制御SiCxOyおよびSiOx電子捕獲層を用いた不揮発性pnメモリダイオードの特性制御2017
- Author(s)
  土屋充沙，塚本貴広，加藤格，雑賀章浩，須田良幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県、横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] p-Cu2O/AlOx/n-SiC/n-Si構造の不揮発性pnメモリダイオードと低電圧動作2016
- Author(s)
  土屋充沙、塚本貴弘、須田良幸
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  首都大学東京（東京都、八王子市）
- Year and Date
  2016-07-23
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] p-Cu2O/AlOx/n-SiC/n-Si-structured nonvolatile pn memory diode with low switching voltages2016
- Author(s)
  Misa Tsuchiya, Tsukamoto Tsukamoto and Yoshiyuki Suda
- Organizer
  29th Int. Microprocesses and Nanotechnology Conf.
- Place of Presentation
  ANA Crowne Plaza Kyoto (Kyoto, Japan)
- Year and Date
  2016-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Au/CuOx/(CuxNiySiz)mOn/n-Si構造の抵抗変化型不揮発性メモリ2016
- Author(s)
  岩佐太陽、塚本貴広、須田良幸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都、目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] SiGe Sputter Epitaxy and Its Application to SiGe 2D Devices2015
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Takashi Mimura
- Organizer
  Collaborative Conference on Crystal Growth
- Place of Presentation
  Eaton Hotel (Hong Kong, China)
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] 抵抗変化型不揮発性メモリの探索2015
- Author(s)
  須田良幸
- Organizer
  De Novo Si Workshop
- Place of Presentation
  静岡大学（静岡県、浜松市）
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Effects of DC Sputtering Conditions on Formation of Ge Layers on Si Substrates by Sputter Epitaxy method2014
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda
- Organizer
  2014 Int. SiGe Technology and Device Meeting
- Place of Presentation
  Singapore, Singapore
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] SiGe Processes and Their Device Applications Using Sputter Epitaxy Method2014
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Sohei Fujimura, Satoshi Tamanyu, Akira Motohashi, Midori Ikeda, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura and Toshiaki Matsui
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Miyagi
- Invited
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method2013
- Author(s)
  Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
- Organizer
  8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Kyushu University, Fukuoka
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] スパッタエピタキシー法を用いたGe薄膜形成におけるボロンドープSi基板の効果2013
- Author(s)
  塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県、神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] Nobumitsu Hirose, Takashi Mimura*, and Toshiaki Matsui, SiGe Processes and Devices Using Sputter Epitaxy Method, Abs2013
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Akifumi Kasamatsu
- Organizer
  6th Int. Workshop New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Miyagi
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method2013
- Author(s)
  Takahiro Tsukamoto, Akifumi Kasamatsu*, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
- Organizer
  8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Kyushu University, Fukuoka
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] SiGe Processes and Devices Using Sputter Epitaxy Method2013
- Author(s)
  Yoshiyuki Suda, Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, and Toshiaki Matsui
- Organizer
  6th Int. Workshop New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Miyagi
- Invited
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method, Abs2013
- Author(s)
  Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
- Organizer
  8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Kyushu University, Fukuoka
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] スパッタエピタキシー法を用いたGe薄膜形成におけるボロンドープSi基板の効果2013
- Author(s)
  塚本貴広,広瀬信光,笠松章史,三村高志,松井敏明,須田良幸
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学,厚木
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] Electric-Field-Induced A_l2O_3/3C-SiC Resistance Memory2012
- Author(s)
  Nobuo Yamaguchi, Yoshiyuki Suda
- Organizer
  2012 Mater. Res. Soc. Spring Meeting
- Place of Presentation
  San Francisco, Marriott Marquis
- Year and Date
  2012-04-04
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッタSiC膜を用いた抵抗変化型MISメモリ2012
- Author(s)
  小松辰実、須田良幸
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛県、愛媛大学(発表決定)
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] Electric-Field-Induced Al_2O_3/3C-SiC Resistance Memory2012
- Author(s)
  Nobuo Yamaguchi, Yoshiyuki Suda
- Organizer
  2012 Mater.Res. Soc.Spring Meeting
- Place of Presentation
  Moscone West Convention Center, San Francisco, USA
- Year and Date
  2012-04-12
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 4H-SiC基板を用いた不揮発性メモリ2012
- Author(s)
  山田有季乃、須田良幸
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛県、愛媛大学(発表決定)
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッタエピタキシー法で形成したGe薄膜の平坦化機構2011
- Author(s)
  花房宏明、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形県山形大学
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] 浮遊金属の酸化による不揮発性SiCメモリの素子化2011
- Author(s)
  山口伸雄、須田良幸
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形県、山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 浮遊金属の酸化による不揮発性SiCメモリの素子化2011
- Author(s)
  山口伸雄、須田良幸
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形県山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices, Int2011
- Author(s)
  Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa and Manabu Kanazawa
- Organizer
  Union of Materials Research Soc
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2011-09-11
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] スパッタSiC膜を用いた抵抗変化型MISメモリ2011
- Author(s)
  岩崎慶士、須田良幸、井上直久
- Organizer
  2011電子情報通信学会総合大会
- Place of Presentation
  (DVDの発行をもって成立)
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 浮遊電極を用いた2端子抵抗変化型不揮発性メモリ2011
- Author(s)
  野村彬成、須田良幸
- Organizer
  2011電子情報通信学会総合大会
- Place of Presentation
  (DVDの発行をもって成立)
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッタエピタキシー法を用いたSiC膜の形成とメモリへの応用2011
- Author(s)
  小松辰実, 須田良幸
- Organizer
  東京農工大学・電気通信大学「ナノ未来材料とコヒーレント光科学」第8回合同シンポジウム
- Place of Presentation
  東京都東京農工大学
- Year and Date
  2011-12-10
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] Phosphorus Mediated Growth of Ge Layer on Si (001) Substrate2011
- Author(s)
  Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi, Kasamatsu, Takashi Mimura, Toshiaki Matsui, Harold M. H. Chong, Hiroshi Mizuta, and Yoshiyuki Suda
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Aichi Industry & Labor Center, Nagoya
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices2011
- Author(s)
  Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa, Manabu Kanazawa
- Organizer
  International Union of Materials Research Society(招待講演)
- Place of Presentation
  Taipei World Trade Center Nangang Exhibition Hall, Ｔａｉｐｅｉ, Taiwan
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] 浮遊金属の酸化を用いた不揮発性SiCメモリ2011
- Author(s)
  山口伸雄, 須田良幸
- Organizer
  東京農工大学・電気通信大学「ナノ未来材料とコヒーレント光科学」第8回合同シンポジウム
- Place of Presentation
  東京都東京農工大学
- Year and Date
  2011-12-10
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate2011
- Author(s)
  Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Harold M. H. Chong, Hiroshi Mizuta, and Yoshiyuki Suda
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Aichi Industry & Labor Center, Nagoya, Aichi
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] 浮遊電極を用いた2端子抵抗変化型不揮発性メモリ2011
- Author(s)
  野村彬成・須田良幸
- Organizer
  2011電子情報通信学会総合大会
- Place of Presentation
  2011年総合大会講演論文集のDVDの発行をもって成立
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッ.死ic膜を用いた抵抗変化型MISメモリ2011
- Author(s)
  岩崎慶士、須田良幸、井上直久
- Organizer
  2011電子情報通信学会総合大会
- Place of Presentation
  2011年総合大会講演論文集のDVDの発行をもって成立
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッタエピタキシー法で形成したGe薄膜の平坦化機構2011
- Author(s)
  花房宏明,広瀬信光,笠松章史,三村高志,松井敏明,須田良幸
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学,山形
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23656210
[Presentation] スパッタSiC膜を用いたMISメモリ2010
- Author(s)
  岩崎慶士、長谷川宏巳、井上直久、河村裕一、須田良幸
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県、東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 3C-SiC抵抗変化型不揮発メモリー2010
- Author(s)
  須田良幸
- Organizer
  薄膜第131委員会第253 回研究会
- Place of Presentation
  大阪府、メルパルク大阪
- Year and Date
  2010-12-09
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiCの赤外吸収(2)各種材料の測定2010
- Author(s)
  井上直久、須田良幸、岩崎慶士、菅谷孝夫、後藤安則、河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県、東海大学
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] Nonvolatile-Resistance-Memory Property of SiOx-capped 3C-SiC Ultrathin Films on Si(100) Prepared by Using Monomethylsilane2010
- Author(s)
  ローランドバンタクロ、山口祐一郎、齋藤英司、半田浩之、宮本優、鈴木康、須田良幸、末光眞希
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大、神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiCの赤外吸収(2)各種材料の測定2010
- Author(s)
  井上直久、須田良幸、岩崎慶士、菅谷孝夫、後藤安則、河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大、神奈川県
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 3c-SiC抵抗変化型不揮発メモリー2010
- Author(s)
  須田良幸
- Organizer
  薄膜第131委員会第253回研究会
- Place of Presentation
  大阪府招待講演
- Year and Date
  2010-12-09
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] Two-Terminal Nonvolatile Resistive Memory Having Floating Metal2010
- Author(s)
  A.Nomura, K.Iwasaki, Y.Suda
- Organizer
  東京農工大学・電気通信大学「ナノ未来材料とコヒーレント光科学」第7回合同シンポジウム
- Place of Presentation
  東京都
- Year and Date
  2010-12-11
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] スパッタSiC膜を用いたMISメモリ2010
- Author(s)
  岩崎慶士、長谷川宏巳、井上直久、河村裕一、須田良幸
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大、神奈川県
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 浮遊電極を用いた2端子型抵抗変化型不揮発性メモリ2009
- Author(s)
  野村彬成、山口祐一郎、須田良幸
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiC薄膜の赤外吸収2009
- Author(s)
  井上直久、須田良幸、長谷川宏巳、山口祐一郎、河村裕一、大山英典、高倉健一郎、井手亜貴子、菅谷孝夫、田久保嘉隆
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、茨城県
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] 浮遊電極を用いた2端子型抵抗変化型不揮発性メモリ2009
- Author(s)
  野村彬成、山口祐一郎、須田良幸
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県、富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiCを用いた2端子抵抗変化型不揮発性メモリ2009
- Author(s)
  須田良幸, 山口祐一郎
- Organizer
  第6回電通大・東京農工大合同シンポジウム
- Place of Presentation
  東京農工大、東京都
- Year and Date
  2009-12-05
- Data Source
  KAKENHI-PROJECT-21360164
[Presentation] SiO_2/SiO_x/3C-SiC/n-Si (001)Nonvolatile Resistance Memory Formedwith One-Stage Oxidation Process2008
- Author(s)
  Y. Yamaguchi, H. Hasegawa, Y. Suda
- Organizer
  214th ECS Meeting (PRiME 2008)
- Place of Presentation
  Hawaii
- Year and Date
  2008-10-15
- Data Source
  KAKENHI-PROJECT-19360156
[Presentation] SiO_2/SiO_x/SiC/Si MIS不揮発性抵抗変化型メモリの一段酸化形成技術2008
- Author(s)
  山口祐一郎、長谷川宏巳、須田良幸
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Data Source
  KAKENHI-PROJECT-19360156
[Presentation] SiO_2/SiO_x/3C-SiC/n-Si(001)Nonvolatile Resistance Memory Formed with One-Stage Oxidation Process2008
- Author(s)
  Y. Yamaguchi, H. Hasegawa, and Y. Suda
- Organizer
  214th ECS meeting
- Place of Presentation
  Hawaii
- Data Source
  KAKENHI-PROJECT-19360156
[Presentation] SiO_2/SiO_x/SiC/Si MIS不揮発性抵抗変化型メモリの一段酸化形成技術2008
- Author(s)
  山口祐一郎,長谷川宏巳,須田良幸
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市
- Year and Date
  2008-10-03
- Data Source
  KAKENHI-PROJECT-19360156
[Presentation] Al/AlOx/SiCxOy/SiC/n-Si Structured Resistive Nonvolatile Memory Formed by Autoxidation of Al
- Author(s)
  Kyohei. Kida, Takahiro Tsukamoto and Yoshiyuki Suda
- Organizer
  27th Int. Microprocesses and Nanotechnology Conf.
- Place of Presentation
  ヒルトン福岡シーホーク（福岡県、福岡市）
- Year and Date
  2014-11-04 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] Au/CuOx/NiOx/n-Si 2層金属酸化物構造の抵抗変化型不揮発性メモリ
- Author(s)
  岩佐太陽、塚本貴広、須田良幸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県、平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] スパッタエピタキシー法を用いたSi直上へのGeSn薄膜の形成
- Author(s)
  塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] Si直上Ge薄膜形成におけるスパッタ電力の効果と表面平坦化の試み
- Author(s)
  塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630123
[Presentation] p-Cu2O/SiOx/n-SiC pnダイオード構造抵抗変化型メモリの低温形成技術
- Author(s)
  山下敦史、塚本貴広、須田良幸
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（北海道、札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26289099
[Presentation] p-Cu2O/AlOx/n-SiC pnダイオード構造の抵抗変化型不揮発性メモリ
- Author(s)
  土屋充沙、山下敦史、塚本貴広、須田良幸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県、平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289099

1. KOSHIDA Nobuyoshi (50143631)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. TSUKAMOTO Takahiro (50640942)

# of Collaborated Projects: 4 results

# of Collaborated Products: 41 results
3. KOYAMA Hideki (40234918)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. 広瀬信光 (90212175)

# of Collaborated Projects: 2 results

# of Collaborated Products: 17 results
5. KOMODA Takuya

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SUDA Yoshiyuki 須田 良幸

Research Projects

Research Products

Co-Researchers

Development of high-frequency devices using GeSiSn/GeSn quantum wells

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High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering methodPrincipal Investigator

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Development of memory diode and its application to densest array memoryPrincipal Investigator

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Technology of Formation of Ge Virtual Substrates by Growth of Ge Flat Films Directly on Si Using Sputter Epitaxy MethodPrincipal Investigator

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Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy MethodPrincipal Investigator

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High-Density New Two-Terminal Resistive Nonvolatile Memory Using SiC and Its Integration TechnologyPrincipal Investigator

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High-Density New Two-Terminal Resistive Nonvolatile MemoryUsing Silicon CarbidePrincipal Investigator

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Si/SiGe Multiple-Barrier Resonant Tunneling Diode and Its Integrated TechnologyPrincipal Investigator

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Si/SiGe Multiple-Quantum-well Resonant Tunneling DevicePrincipal Investigator

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Development and Photonic Integration of Efficient and Stable Silicon-Based LED

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Sub-Atomic-Layr Epitaxy of Si/Ge SemiconductorsPrincipal Investigator

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Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration

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多孔質シリコンの可視域発光に関する基礎的研究

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SUDA Yoshiyuki 須田良幸

[Book] 日本化学会編実験化学講座第27巻2004