NAOI Hiroyuki 直井弘之

… Alternative Names

直井弘之ナオイヒロユキ

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Researcher Number	10373101
Other IDs
Affiliation (Current)	2025: 和歌山工業高等専門学校, 電気情報工学科, 教授
Affiliation (based on the past Project Information) *help	2009 – 2014: 和歌山工業高等専門学校, 電気情報工学科, 准教授 2010: 立命館大学, COE推進機構, ポストドクトラルフェロー 2008: 立命館大学, COE推進機構, 研究員 2006: 立命館大学, COE推進機構, ポストドクトラルフェロー 2005 – 2006: 立命館大学, COE推進機構, 研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator In_xAl_<1-x>N / In_xGa_<1-x>N / 極性 / 熱的安定性 / RF-MBE / 熱処理 / InN Except Principal Investigator 窒化物半導体 / AlN / 窒化アルミニウム … More / p形ドーピング / 多重量子井戸 / p型ドーピング / 分子線エピタキシー法 / 窒化インジウム / RF-MBE / InN / 深紫外光源 / AlGaN / MOVPE / 組成変調 / 紫外光源 / 電子線励起 / GaN / ELO / 横方向成長 / 触媒作用 / ハイドライド気相エピタキシャル成長 / 紫外線発光 / ファセット制御 / EPD法 / 貫通転位 / AIN / エッチピット / 加工基板 / 選択横方向成長 / HVPE / ハイドライド気相成長法 / 結晶性 / キャリア濃度 / 窒素ラジカル / MIS構造 / InGaN / オーミックコンタクト / インターミキシング / ヘテロ界面 / 分子線エピタキシー / エピタキシャル成長 / 無極性 / ナノコラム / 光反射率 / ラジカルビーム / RHEED / その場観察 / 分子線エビタキシー法 / DERI法 / Seebeck係数 / サーモパワー / 窒化インジウムガリウム / ナノ構造 Less

Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.
- Principal Investigator
  
  MIYAKE Hideto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Mie University
High growth-rate hydride-vapor-phase of aluminum nitride
- Principal Investigator
  
  MIYAKE Hideto
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Mie University
RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University
熱処理によるInN系半導体の高品質化に関する研究Principal Investigator
- Principal Investigator
  
  直井弘之
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ritsumeikan University

All 2008 2007 Other

All Journal Article Presentation

[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoiuminescence2008
- Author(s)
  T.Akagi, K.Kosaka, S.Harui, D.Muto, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  J. Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi2007
- Author(s)
  M. Nods, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of a-plane InN grown on r-plane Sapphire by ECR-MBE2007
- Author(s)
  S.Watanabe, Y.Kumagai, A.Tsuyuguchi, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 955
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys2007
- Author(s)
  S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys2007
- Author(s)
  H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
- Journal Title
  
  stat. sol 244
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, and Y.Nanishi
- Journal Title
  
  Mater.Res.Soc.Symp.Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of In-rich InA1N films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J2007
- Author(s)
  H. Na, S. Takado, S. Sawada, M. Kurouchi, T. Akagi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 300
  
  Pages: 177-181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of a-plane (11-20) In-rich InGaN on r-plane (10-12) sapphire by RF-MBE2007
- Author(s)
  M.Noda, Y.Kumagai, S.Takado, D, Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE, phys2007
- Author(s)
  M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, H.Naoi, T.Araki, and Y.Nanishi
- Journal Title
  
  Mater.Res.Soc.Sump.Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN2007
- Author(s)
  H.Na, S.Takado, S.Sawada, M.Kurouchi, T.Akagi, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 177-181
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, Y.Nanishi
- Journal Title
  
  Material Research Society Symposium Proceedings 955
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
- Author(s)
  S.Watanabe,Y.Kumagai,A.Tsuyuguchi,H.Naoi,T.Araki,Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(c) 4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of In-rich InAIN films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H.Naoi, K.Fuiishima, S.Takado, M.Kurouchi, D.Muto, T.Araki, H.Na, and Y.Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of InN nanocolumns by RF-MBE2007
- Author(s)
  S.Nishikawa, Y.Nakao, H.Naoi, T.Araki, H.Na, Y.Nanishi
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 490-495
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
- Author(s)
  H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
- Journal Title
  
  phys. stat. sol.(b) 244
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
- Author(s)
  S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 955
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Soc. Symp. Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of InN nanocolumns by RF-MBE, J2007
- Author(s)
  S. Nishikawa, Y. Nakao, H. Naoi, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 301-302
  
  Pages: 490-495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] M.Noda, Y.Kumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi2007
- Author(s)
  M.Noda, Y.Itumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(c) 4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
- Author(s)
  H.Naoi, D.Muto, T.Hioka, Y.Hayakana, A.Suzuki, T.Araki, and Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(b) 224
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, T.Araki, H.Naoi, Y.Nanishi
- Journal Title
  
  Material Research Society Symposium Proceedings 955
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE, Mater2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
- Journal Title
  
  Res. Soc. Symp. Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Thermal and chemical stabilities of In- and N-polar InN surfaces
- Author(s)
  Hiroyuki Naoi
- Journal Title
  
  physica status solidi(b) (掲載予定)
- Data Source
  KAKENHI-PROJECT-17760261
[Presentation] Study on Growth of Mg-doped InN by RF-MBE and its Electrical Properties2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, T. Araki, and Y. Nanishi
- Organizer
  The 19th Indium Phosphide and Related Materials Conference(IPRM2007)
- Place of Presentation
  Kunibiki Messe(Matsue, Japan)
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on ECR-MBE Growth and Properties of A-plane InN on R-plane Sapphire2007
- Author(s)
  T. Araki, Y. Kumagai, S. Watanabe, T. Akagi. H. Naoi, Y. Nanishi
- Organizer
  International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  Grand America and Little America hotels(Salt Lake City, USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Fukumoto, K. M. Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, T. Araki, Y. Nanishi, and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growthof InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D.Fukuoka, T.Yamaguchi, S.Harui, T.Akagi, K.Hiramatsu, H.Miyake, H.Naoi, T.Araki, and Y.Nanishi
- Organizer
  International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Grand America and Little America hotels(SaltLake City,USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on ECR-MBE Growth and Properties of A-plane InN on R-plane Sapphire2007
- Author(s)
  T.Araki, Y.Iiumagai, S.Watanabe, T.Akagi, H.Naoi, Y.Nanishi
- Organizer
  International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Grand America and Little America hotels(SaltLake City,USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Polar and Non-polar Growth of InN and InGaN2007
- Author(s)
  Y. Nanishi, H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, Y. Kumagai, M. Noda, and T. Araki
- Organizer
  The 3rd Asia-Pacific Workshop on Widegap Semiconductors(APWS 2007)
- Place of Presentation
  Jeonju, Korea
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] 原子状水素照射によるRF-MBE成長InNの光学特性の変化2007
- Author(s)
  草塩卓矢、福田貴之、武藤大祐、野田光彦、赤木孝信、直井弘之、荒木努、名西〓之
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Infrared Cathodoluminescence measurements of InN films2007
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, H. Naoi, T. Araki. Y. Nanishi
- Organizer
  TMS 2007 ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  University of Notre Dame(Indiana, USA)
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on surface electron accumulation on A-plane InN by electrolyte-based capacitance-voltage measurements2007
- Author(s)
  M. Nods, S. Fukumoto, D. Muto, K. M. Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, H. Naoi, T. Araki, Y. Nanishi and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Infrared Cathodoluminescence measurements of InN films2007
- Author(s)
  T.Akagi, k.kosaka, S.Harui, H.Naoi, T.Araki, Y.Nanishi
- Organizer
  TMS 2007 ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  University of Notre Dame(Indiana,USA)
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on Growth of Mg-doped InN by RF-MBE and its Electrical Properties2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, T.Araki, and Y.Nanishi
- Organizer
  The 19th Indium Phosphide and Related Materials Conference (IPRM2007)
- Place of Presentation
  kunibiki Messe(Matsue,Japan)
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] 原子状水素照射によるRF-MBE成長InNの光学特性の変化2007
- Author(s)
  草塩卓矢、福田貴之、武藤大祐、野田光彦、赤木孝信、直井弘之、荒木努、名西憾之
- Organizer
  2007年 (平成19年) 秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道札幌市手稲区)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on surface electron accumulation on A-plane InN by electrolyte-basedcapacitance-voltage measurements2007
- Author(s)
  M.Noda, S.Fukumoto, D.Muto, k.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, H.Naoi, T.Araki, Y.Nanishi and W.Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Fukumoto, K.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, T.Araki, Y.Nanishi, and W.Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D. Fukuoka, T. Yamaguchi, S. Harui, T. Akagi, K. Hiramatsu, H. Miyake, H. Naoi, T. Araki, and Y. Nanishi
- Organizer
  International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  Grand America and Little America hotels(Salt Lake City, USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Fukumoto, K. M.Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, T. Araki, Y. Nanishi, and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PLANNED-18069012

1. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
2. HYUNSEOK Na (80411239)

# of Collaborated Projects: 2 results

# of Collaborated Products: 44 results
3. HIRAMATSU Kazumasa (50165205)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. NANISHI Yasushi (40268157)

# of Collaborated Projects: 2 results

# of Collaborated Products: 46 results
5. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 2 results

# of Collaborated Products: 46 results
6. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. MIYAKE Hideto (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. WANG Ke (60532223)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NAOI Hiroyuki 直井 弘之

直井 弘之 ナオイ ヒロユキ

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Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.

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High growth-rate hydride-vapor-phase of aluminum nitride

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RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

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Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

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熱処理によるInN系半導体の高品質化に関する研究Principal Investigator

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[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008

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[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoiuminescence2008

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[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008

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[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008

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[Journal Article] M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi2007

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[Journal Article] Microstructure of a-plane InN grown on r-plane Sapphire by ECR-MBE2007

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[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007

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[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys2007

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[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys2007

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[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007

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[Journal Article] Growth of In-rich InA1N films on(0001) sapphire by RF-MBE and their properties2007

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[Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J2007

NAOI Hiroyuki 直井弘之

直井弘之ナオイヒロユキ