Tadatomo Kazuyuki 只友一行

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TADATOMO Kazuyuki 只友一行

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Researcher Number	10379927
Other IDs
Affiliation (based on the past Project Information) *help	2021: 山口大学, その他部局等, 名誉教授 2017 – 2020: 山口大学, 大学院創成科学研究科, 教授 2016: 山口大学, 創成科学研究科, 教授 2016: 山口大学, 自然科学研究科, 教授 2013 – 2015: 山口大学, 理工学研究科, 教授 2008 – 2010: Yamaguchi University, 大学院・理工学研究科, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator サファイア基板 / MOVPE / 半極性面 / GaN / 研磨 / GaN基板 / 積層欠陥 / 転位 / HVPE / 結晶成長 / 無極性面 / 発光ダイオード / LED … More Except Principal Investigator … More 窒化物半導体 / トランジスタ / 高電子移動度トランジスタ / 破壊電界 / 耐圧 / HEMT / 電力増幅 / 高出力 / 電力利得 / 無線電力伝送 / 電力増幅器 / AlGaN/GaN / 準ミリ波 / 電子デバイス・機器 / 基板 / パワーデバイス / 漏れ電流 / 半絶縁性 / GaN / 抵抗率 / バッファ層 / 半絶縁性基板 / リーク電流 / 絶縁破壊 / 表面プラズモン / LED / InGaN/GaN / 量子井戸 / 発光ダイオード / 光デバイス / プラズモニクス Less

Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies
- Principal Investigator
  
  Kuzuhara Masaaki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kwansei Gakuin University
  University of Fukui
Study on lateral breakdown field in GaN-based transistors
- Principal Investigator
  
  Kuzuhara Masaaki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui
Development of fundamental technologies for highly efficient plasmonic optical and electronic devices
- Principal Investigator
  
  Okamoto Koichi
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu University
Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substratePrincipal Investigator
- Principal Investigator
  
  Tadatomo Kazuyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodesPrincipal Investigator
- Principal Investigator
  
  TADATOMO Kazuyuki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University

All 2019 2018 2017 2016 2015 2014 2013 2011 2010 2009 2008 Other

All Journal Article Presentation Patent

[Journal Article] Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada
- Journal Title
  
  SPIE Proceedings
  
  Volume: 10124 Pages: 101240R-101240R
- DOI
  10.1117/12.2249589
- Data Source
  KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26289109
[Journal Article] Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO2017
- Author(s)
  N. Okada, N. Morishita, A. Mori, T. Tsukada, K. Tateishi, K. Okamoto, K. Tadatomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289109
[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA07-05FA07
- DOI
  10.7567/jjap.55.05fa07
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016
- Author(s)
  Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo,
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 253 Issue: 1 Pages: 36-45
- DOI
  10.1002/pssb.201552271
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate2015
- Author(s)
  S. Takeuchi, T. Uchiyama, T. Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1142-1148
- DOI
  10.1002/pssb.201451562
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction2015
- Author(s)
  T. Arauchi, S. Takeuchi, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1149-1154
- DOI
  10.1002/pssb.201451564
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2014
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
- Journal Title
  
  Lecture Notes in Electrical Engineering
  
  Volume: 306 Pages: 23-30
- DOI
  10.1007/978-3-319-05711-8_3
- ISBN
  9783319057101, 9783319057118
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Fabrication of free standing {20-21} GaN substrates by HVPE using SiO2 masked GaN templates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 3-4 Pages: 401-404
- DOI
  10.1002/pssc.201300484
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo,
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 3 Pages: 035502-035502
- DOI
  10.7567/jjap.53.035502
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes2011
- Author(s)
  K.Tadatomo, N.Okada
- Journal Title
  
  Proceedings of SPIE Vol.7954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes2011
- Author(s)
  Kazuyuki Tadatomo
- Journal Title
  
  Proceedings of SPIE
  
  Volume: 7954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates2010
- Author(s)
  N.Okada, H.Oshita, A.Kurisu, K.Tadatomo
- Journal Title
  
  Japanese Journal of Applied Physics Vol.50
- NAID
  210000070128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Characterization of semipolar (11-22) GaN on c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO2 mask2010
- Author(s)
  A.Kurisu, K.Murakami, Y.Abe, N.Okada, K.Tadatomo
- Journal Title
  
  Physica Status Solidi (c) Vol.7
  
  Pages: 2059-2062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] サファイア基板上への新しい結晶成長技術 -照明用発光ダイオードの高効率化への取り組み-2009
- Author(s)
  只友一行, 他
- Journal Title
  
  応用電子物性分科会研究例会資料 15
  
  Pages: 148-152
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] サファイア加工基板のGaN成長の新展開2009
- Author(s)
  只友一行, 他
- Journal Title
  
  応用物理 79
  
  Pages: 59-63
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth of Semiconductor (11-22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate2009
- Author(s)
  N.Okada, A.Kurisu, K.Murakami, K.Tadatomo
- Journal Title
  
  Applied Physics Express Vol.2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of a-plane Sapphire2008
- Author(s)
  N.Okada, Y.Kawashima, K.Tadatomo
- Journal Title
  
  Applied Physics Express Vol.1
- NAID
  10025082981
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 窒化ガリウム結晶自立基板の製造方法2014
- Inventor(s)
  橋本健宏, 古家大士, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学, 株式会社トクヤマ
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-033208
- Filing Date
  2014-02-24
- Data Source
  KAKENHI-PROJECT-25289088
[Patent] 窒化ガリウム結晶積層基板及びその製造方法2011
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  株式会社トクヤマ,国立大学法人山口大学
- Industrial Property Number
  2011-049487
- Filing Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 窒化ガリウム結晶積層基板及びその製造方法2011
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  トクヤマ,山口大学
- Filing Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2011-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Number
  2011-053393
- Filing Date
  2011-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板及びその製造方法2010
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板およびその製造方法2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-08-20
- Overseas
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] サファイア基板の製造方法および半導体装置2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-02-09
- Overseas
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板およびその製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Filing Date
  2009-08-20
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-03-09
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] GaN-on-GaN HEMTs with high breakdown critical fields2019
- Author(s)
  A. Aoai, K. Suzuki, A. Tamamoto, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
- Organizer
  Topical Workshop on Heterostructure Microelectronics 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00761
[Presentation] Study on breakdown field in Fe-doped semi-insulating GaN substrates2018
- Author(s)
  A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
- Organizer
  IWN-2018, ThP-ED-2
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04347
[Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018
- Author(s)
  A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara, K. Nojima, N. Ishibashi, N. Okada, and K. Tadatomo
- Organizer
  IMFEDK 2018, Kyoto
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04347
[Presentation] Fe添加した半絶縁性GaN基板の絶縁破壊電界評価2018
- Author(s)
  青合充樹、鈴木孝介、J.T.Asubar、徳田博邦、岡田成仁、只友一行、葛原正明
- Organizer
  第79回応用物理学会秋季講演会、21a-331-1、　名古屋
- Data Source
  KAKENHI-PROJECT-16H04347
[Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018
- Author(s)
  K. Suzuki, A. Aoai, J. T. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, and M. Kuzuhara
- Organizer
  WOCSDICE 2018, Bucharest, Romania
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04347
[Presentation] Plasmonic Light-Emitting Diodes with Thin p-Type Layer and Localized-Ag Layer Embedded by ITO2015
- Author(s)
  N. Okada, T. Tsukada, K. Tadatomo, K. Okamoto
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
- Place of Presentation
  Pacifico Yokohama
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Fabrication of semipolar free standing GaN Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices 2015
- Place of Presentation
  京都大学芝蘭会館（京都府京都市）
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] HVPEによるGaN非極性基板作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔
- Organizer
  日本学術振興会第162委員会第94回研究会
- Place of Presentation
  主婦会館（東京都千代田区）
- Year and Date
  2015-07-24
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Efficient InGaN-based Plasmonic Light-Emitting Diodes with Thin p-type Layers2015
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, T. Tsukada, N. Okada, K. Tadatomo
- Organizer
  The 10th Asia-Pacific Conference on Near-field Optics (APNFO10)
- Place of Presentation
  Hokkaido, japan
- Year and Date
  2015-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] サファイア加工基板上への半極性{20-2-1}GaNの成長2015
- Author(s)
  永利圭，岡村泰仁，岡田成仁，只友一行
- Organizer
  2015年度応用物理・物理系学会中四国支部合同学術講演会
- Place of Presentation
  徳島大学（徳島県徳島市）
- Year and Date
  2015-08-01
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] 半極性自立GaN基板の作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔, 古家大士, 橋本健宏
- Organizer
  日本結晶成長学会ナノエピ分科会第７回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-05-07
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  CLEO-PR 2015
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
- Author(s)
  内山星郎，竹内正太郎，荒内琢士，橋本健宏，山根啓輔，岡田成仁，今井康彦，木村滋，只友一行，酒井朗
- Organizer
  2015年秋季第76回応用物理学会関係連合学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] HVPEの成長条件が厚膜{20-21}GaNの結晶性に与える影響2014
- Author(s)
  橋本健宏, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（相模原市）
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2013
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, and K. Tadatomo
- Organizer
  International Symposium on Optomechatronic Technologies 2013 (ISOT2013)
- Place of Presentation
  Jeju Island, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Advancement in future applications with III-Nitrides by fusion technology between epitaxy and prosessing2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
- Organizer
  Workshop on Ultra-Precision Processing for III-Nitride (WUPP for III-Nitride)
- Place of Presentation
  Santa Barbara, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, ａｎｄ K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes2011
- Author(s)
  只友一行
- Organizer
  SPIE Photonics West 2011
- Place of Presentation
  San Francisco, USA.
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes2011
- Author(s)
  Kazuyuki Tadatomo
- Organizer
  Workshop on Frontier Photonics and Electronic Materials and Devices, 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada, Spain
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes, Workshop on Frontier Photonics and Electronic Materials and Devices2011
- Author(s)
  只友一行
- Organizer
  2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada, Spain.
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes2011
- Author(s)
  Kazuyuki Tadatomo
- Organizer
  SPIE Photonics West 2011
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] サファイア加工基板上の窒化物半導体成長2010
- Author(s)
  只友一行
- Organizer
  (財)科学技術交流財団分野別研究会LED応用研究会(第2回)
- Place of Presentation
  名城大学,愛知県
- Year and Date
  2010-10-19
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] サファイア加工基板を用いた非極性面GaN成長とその成長機構2010
- Author(s)
  只友一行
- Organizer
  第146回KASTECセミナー
- Place of Presentation
  九州大学,福岡県
- Year and Date
  2010-12-16
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] サファイア加工基板を用いたGaN面方位制御技術2010
- Author(s)
  只友一行
- Organizer
  国立大学法人三重大学第24回CUTEセミナー
- Place of Presentation
  三重県,三重大学
- Year and Date
  2010-11-25
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] サファイア加工基板上の窒化物半導体成長2010
- Author(s)
  只友一行
- Organizer
  (財)科学技術交流財団分野別研究会LED応用研究会(第2回)
- Place of Presentation
  愛知県,名城大学
- Year and Date
  2010-10-19
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] サファイア加工基板を使った非極性面GaNのMOVPE成長2009
- Author(s)
  只友-行
- Organizer
  日本学術振興会161委員会/162委員会合同研究会
- Place of Presentation
  鳥羽市, 三重県
- Year and Date
  2009-03-13
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] Fabrication of InGaN based plasmonic LED with thin p-type layer
- Author(s)
  T. Tsukada, K. Yamane, N. Okada, K. Tadatomo, K. Tateishi, K. Okamoto
- Organizer
  15th International Union of Materials Research Societies, International Conference in Asia (IUMRS-ICA)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Plasmonic light-emitting diodes with thin p-type layer and localized-Ag layer embedded by ITO
- Author(s)
  N. Okada, T. Tsukada, K. Tadatomo, K. Okamoto
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15)
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] HVPE成長した半極性｛20-21｝面GaNと｛20-2-1｝面GaNの結晶性比較
- Author(s)
  橋本健宏，稲垣卓志，中尾洸太，山根啓輔，岡田成仁，只友一行
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌市, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] 局在プラズモンを用いたInGaN系LEDの作製と評価
- Author(s)
  塚田哲朗、岡田成仁、只友一行、立石和隆、岡本晃一
- Organizer
  第75回応用物理学会関係連合学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Free standing GaN substrate grown on patterned sapphire substrate
- Author(s)
  K. Tadatomo K. Yamane, N. Okada
- Organizer
  PolarCoN Summer Seminar 2014
- Place of Presentation
  Bensheim, Germany
- Year and Date
  2014-09-24 – 2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Efficient InGaN-based Plasmonic Light-Emitting Diodes with Thin p-type Layers
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, T. Tsukada, N. Okada, K. Tadatomo
- Organizer
  The 10th Asia-Pacific Conference on Near-field Optics (APNFO10)
- Place of Presentation
  Hakodate, Japan
- Year and Date
  2015-07-07 – 2015-07-10
- Data Source
  KAKENHI-PROJECT-26289109

1. OKADA Narihito (70510684)

# of Collaborated Projects: 3 results

# of Collaborated Products: 31 results
2. Kuzuhara Masaaki (20377469)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
3. ASUBAR JOEL (10574220)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
4. KUWANO Noroyoki (50038022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. YAMADA Youichi (00251033)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. SAKAI Akira (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. Okamoto Koichi (50467453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
8. 山根啓輔 (80610815)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
9. 山本あき勇 (90210517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 分島彰男 (80588575)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 川上養一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
12. 船戸充

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Tadatomo Kazuyuki 只友 一行

TADATOMO Kazuyuki 只友 一行

Research Projects

Research Products

Co-Researchers

Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies

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Study on lateral breakdown field in GaN-based transistors

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Development of fundamental technologies for highly efficient plasmonic optical and electronic devices

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Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substratePrincipal Investigator

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Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodesPrincipal Investigator

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[Journal Article] Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region2017

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[Journal Article] Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO2017

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[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016

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[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016

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[Journal Article] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate2015

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[Journal Article] Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction2015

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[Journal Article] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2014

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[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014

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[Journal Article] Fabrication of free standing {20-21} GaN substrates by HVPE using SiO2 masked GaN templates2014

Author(s)

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DOI

Data Source

[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014

Tadatomo Kazuyuki 只友一行

TADATOMO Kazuyuki 只友一行