Nishimura Tomonori 西村知紀

… Alternative Names

西村知紀ニシムラトモノリ

Nishimura Tmonori 西村知紀

NISHIMURA Tomonori 西村知紀

Less

Researcher Number	10396781
Other IDs
Affiliation (Current)	2025: 東京大学, 大学院工学系研究科(工学部), 技術専門職員
Affiliation (based on the past Project Information) *help	2025: 東京大学, 大学院工学系研究科(工学部), 技術専門職員 2022 – 2023: 東京大学, 大学院工学系研究科(工学部), 技術専門職員 2017 – 2020: 東京大学, 大学院工学系研究科(工学部), 技術専門職員 2013 – 2015: 東京大学, 工学(系)研究科(研究院), 技術専門職員 2011: 東京大学, 大学院・工学系研究科(工学部), 技術専門職員 … More 2011: 東京大学, 大学院・工学系研究科, 技術専門職員 2010: 東京大学, 大学院・工学系研究科(工学部), 技術職員 2007: 東京大学, 大学院・工学系研究科, 技術職員 2006: 東京大学, 大学院工学系研究科, 技術職員 2005: 東京大学, 大学院・工学系研究科, 技術職員 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Structural/Functional materials Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator フェルミレベルピンニング / 仕事関数 / シリコン / 半導体 / 金属/半導体界面 / ゲルマニウム / MOSFET / 界面電荷 / 二次元半導体 / 金属半導体界面 … More / グラフェン / バンドアライメント / 界面 / 電子デバイス・機器 / コンタクト抵抗 / ショットキー障壁 / 電子デバイス・集積回路 / 有機半導体 / 半導体物性 … More Except Principal Investigator 酸素イオン伝導機構 / 極薄電解質臨界膜厚 / 薄膜測定 / イオン輸送機構 / 等価回路 / YSZ / インピーダンススペクトル / 酸素空孔 / 高誘電率絶縁膜 / 伝導キャリア / イオン電導 / 電解質膜中の電気伝導 / 電解質膜 / 固体電解質材料 / 極薄YSZ膜 / 結晶構造 / キャリア拡散 / 電子伝導 / イオン伝導 / 極薄電解質膜 / HfLaOx / Si-doped HfO2 / Ge / High-k膜 / ショットキーバリア高さ / 高圧酸化 / ESR / Fermi-level Pinning / GeO2 / Higher-k膜 / 構造相転移 / XPS / 界面ダイポール / 表面・界面物性 / 超薄膜 / 誘電体物性 / 電気・電子材料 Less

二次元半導体／絶縁膜界面の電荷生成・移動機構及びバンドアライメントに関する研究Principal Investigator
- Principal Investigator
  
  西村知紀
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  The University of Tokyo
二次元層状物質を用いた金属/Si，Ge界面のバンドアライメント決定機構の解明Principal Investigator
- Principal Investigator
  
  西村知紀
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  The University of Tokyo
Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Tokyo
  Tohoku University
Contact resistance lowering at metal/Ge interface by controlling metal property and interface structurePrincipal Investigator
- Principal Investigator
  
  Nishimura Tomonori
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Study of Fermi level pinning at metal/germanium interface and its alleviation mechanismPrincipal Investigator
- Principal Investigator
  
  Nishimura Tmonori
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Study of interface passivation effect on band alignment at metal/semiconductor interfacePrincipal Investigator
- Principal Investigator
  
  NISHIMURA Tomonori
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
単一グレイン有機薄膜トランジスタの形成技術と電気伝導機構に関する研究Principal Investigator
- Principal Investigator
  
  西村知紀
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  The University of Tokyo

[Journal Article] Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices2022
- Author(s)
  Tomonori Nishimura
- Journal Title
  
  Electronics
  
  Volume: 11 Issue: 15 Pages: 2419-2419
- DOI
  10.3390/electronics11152419
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K04212
[Journal Article] Understanding of Fermi level pinning at metal/germanium interface based on semiconductor structure2020
- Author(s)
  Luo Xuan、Nishimura Tomonori、Yajima Takeaki、Toriumi Akira
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 3 Pages: 031003-031003
- DOI
  10.35848/1882-0786/ab7713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06374
[Journal Article] Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature2020
- Author(s)
  Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBF03-SBBF03
- DOI
  10.35848/1347-4065/abd6dc
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01467
[Journal Article] Almost pinning-free bismuth/Ge and /Si interfaces2019
- Author(s)
  Nishimura Tomonori、Luo Xuan、Matsumoto Soshi、Yajima Takeaki、Toriumi Akira
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 9 Pages: 095013-095013
- DOI
  10.1063/1.5115535
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06374
[Journal Article] Reconsideration of Metal Work Function at Metal/Semiconductor Interface2017
- Author(s)
  Nishimura Tomonori, Yajima Takeaki, and Toriumi Akira
- Journal Title
  
  ECS Transactions
  
  Volume: 80 Issue: 4 Pages: 107-112
- DOI
  10.1149/08004.0107ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06374
[Journal Article] "Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing. "2014
- Author(s)
  Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 5 Pages: 051301-051301
- DOI
  10.7567/apex.7.051301
- NAID
  210000137073
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032, KAKENHI-PROJECT-25420320
[Journal Article] Counter Dipole Layer Formation in Multi-layer High-k Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_32011
- Author(s)
  T.Nishimura, C.H.Lee, T.Tabata, S.K.Wang, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 6 Pages: 064201-064201
- DOI
  10.1143/apex.4.064201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J09337, KAKENHI-PROJECT-22760244
[Journal Article] Interfacial Dipole at High-k Dielectrics/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics2011
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50
- NAID
  40018777874
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Interfacial Dipole at High-k Dielectric/SiO_2 Interface : X-ray PhotoelectronSpectroscopy Characteristics2011
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Torium
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Pages: 31502-31502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Pages: 61501-61501
- NAID
  10027015062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 171-180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 463-477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Desorption kinetics of GeO from GeO2/Ge structure2010
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio , A.Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Experimental Demonstration of Higher-k Phase HfO2 through Non equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 203-212
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3
- NAID
  210000014682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T, Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 33-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K.Kita, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions 19(2)
  
  Pages: 101-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 71404-71404
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Opportunities and challenges for Ge CMOS-Control of interfacing field on Ge is a key-2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Journal Title
  
  Microelectronic Engineering 86
  
  Pages: 1571-1576
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 165-173
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K. Nagashio, C. H. Lee, T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  MRS Symp. Proc.
  
  Volume: 1155 Pages: 6-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, C.H.Lee, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Materials Research Society Symposium Proceedings 1155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura and A. Toriumi
- Journal Title
  
  Appl. Surf. Sci.
  
  Volume: 254 Pages: 6100-6105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 1
- NAID
  10025080321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Appl.Phys.Exp 1
- NAID
  10025080321
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Internal Photoemission over HfO_2 and Hf_<1-x> Si_xO_2 High-k Insulating Barriers : Band Offset and Interfacial Dipole Characterization2008
- Author(s)
  J. Widiez, K. Kita, K. Tomida, T. Nishimura, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 47 Pages: 2410-2414
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Journal Title
  
  ECS Transaction 11(4)
  
  Pages: 461-469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 91 Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Eividence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Applied Physics Letter 91
  
  Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Threshold voltage control in pentacene TFTs by perfluoropentacene stack2006
- Author(s)
  T.Yokoyama, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2006 International Conference on Solid State Devices and Materials
  
  Pages: 936-937
- Data Source
  KAKENHI-PROJECT-17760559
[Journal Article] Reduction of bias-induced threshold voltage shift in pentacene field effect transistors by interface modification and molecular ordering.2006
- Author(s)
  C.B.Park, T.Nishimura, T.Yokoyama, K.Kita, A Toriumi
- Journal Title
  
  Extended Abstracts of 2006 International Conference on Solid State Devices and Materials
  
  Pages: 924-925
- NAID
  10022547191
- Data Source
  KAKENHI-PROJECT-17760559
[Journal Article] Performance Recovery of n-channel Perfluoropentacene Thin Film Transistors by High Vacuum Annealing2005
- Author(s)
  T.Yokoyama, T.Nishimura, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials
  
  Pages: 984-984
- Data Source
  KAKENHI-PROJECT-17760559
[Journal Article] Energy Level Consideration of Source/Channel/Drain for Performance Enhancements of N- and P-Channel Organic FETs2005
- Author(s)
  T.Yokoyama, T.Nishimura, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  IEEE Device Research Conference Conferrence Digest.
  
  Pages: 107-107
- Data Source
  KAKENHI-PROJECT-17760559
[Patent] 特許2007
- Inventor(s)
  鳥海明, 西村知紀
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2007-227480
- Filing Date
  2007-09-03
- Data Source
  KAKENHI-PROJECT-19106005
[Patent] 半導体装置及びその製造方法2007
- Inventor(s)
  鳥海明, 西村知紀
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2007-227480
- Filing Date
  2007-09-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 高対称相構造を有する低Y2O3濃度 YSZ 薄膜のイオン伝導特性2021
- Author(s)
  西村知紀，小島俊哉，長汐晃輔，丹羽正昭
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] Ion conductivity of low-Y2O3-content yttria-stabilized zirconia2020
- Author(s)
  Tomonori Nishimura, Toshiya Kojima, Kosuke Nagashio, Masaaki Niwa
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] YSZ極薄膜の高温インピーダンス解析2020
- Author(s)
  西村知紀、小島俊哉、長汐晃輔、丹羽正昭
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01467
[Presentation] Understanding and control of Fermi level pinning at metal/germanium interface2019
- Author(s)
  T. Nishimura, X. Luo, T. Yajima, and A. Toriumi
- Organizer
  IEEE Int.Interconnect Technology Conference and Materials for Advanced Metallization Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Schottky界面におけるTwo-band MIGS (metal induced gap states) モデル2019
- Author(s)
  西村知紀，矢嶋赳彬，鳥海　明
- Organizer
  2019年応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Silicide/Si 界面における弱いFermi-level pinningの起源2019
- Author(s)
  西村知紀，羅　シュアン，矢嶋赳彬，鳥海　明
- Organizer
  2019年応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Understanding and control of Fermi level pinning at metal/germanium interface2019
- Author(s)
  T. Nishimura, X. Luo, T. Yajima, and A. Toriumi
- Organizer
  International Interconnect Technology Conference & Materials for Advanced Metallization
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Further investigation of Fermi-level pinning on Ge from substrate side2018
- Author(s)
  T. Nishimura, X. Luo, T. Yajima, and A. Toriumi
- Organizer
  49th IEEE Semiconductor Interface Specialists Conference
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] 半導体界面における金属の仕事関数は真空で良いか？2018
- Author(s)
  西村知紀，羅　シュアン，矢嶋赳彬，鳥海　明
- Organizer
  電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface2018
- Author(s)
  西村知紀，矢嶋赳彬，鳥海　明
- Organizer
  2018年応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] 金属/Ge 界面のFermi-level pinningに及ぼすGe の基板面方位効果2018
- Author(s)
  西村知紀，羅　シュアン;，矢嶋赳彬，鳥海　明
- Organizer
  電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Generalized picture of work function of a metal with Schottky interface2017
- Author(s)
  T. Nishimura, T. Yajima, and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] Reconsideration of Metal Work Function at Metal/Semiconductor Interface2017
- Author(s)
  T. Nishimura, T. Yajima, and A. Toriumi
- Organizer
  Electrochemical Society Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06374
[Presentation] 界面ダイポール密度の制御による金属/Ge界面のフェルミレベルピンニング緩和の試み2016
- Author(s)
  西村知紀，矢嶋赳彬，鳥海明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420320
[Presentation] Design of Metals for Fermi-level Pinning Modulation at Ge/Metal Interfaces2016
- Author(s)
  T. Nishimura, T. Yajima, and A. Toriumi
- Organizer
  International SiGe Technology and Device Meeting 2016 (ISTDM2016) and 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII)
- Place of Presentation
  名古屋大学　（愛知県名古屋市）
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420320
[Presentation] Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface2013
- Author(s)
  T. Nishimura, T. Nakamura, T. Yajima, K. Nagashio and A.Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Kyushu University
- Data Source
  KAKENHI-PROJECT-25420320
[Presentation] Study of Strong Fermi Level Pinning at Metal/Germanium Interface Based on the Impact of Ultra-thin Insulator Insertion2013
- Author(s)
  T. Nishimura, T. Nakamura, and A. Toriumi
- Organizer
  6th International Symposium on Control of Semiconductor Interface
- Place of Presentation
  Fukuoka, Hilton Fukuoka sea hawk
- Data Source
  KAKENHI-PROJECT-25420320
[Presentation] Atomically Flat Germanium (111) Surface by Hydrogen Annealing2013
- Author(s)
  T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  San Francisco, California, U.S.
- Data Source
  KAKENHI-PROJECT-25420320
[Presentation] 熱処理雰囲気の違いによる結晶化HfO2薄膜相変態速度への影響2012
- Author(s)
  岩井貴雅, 中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Counter Dipole Layer Formation in SiO_2/High-k/SiO_2/Si Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  Silicon Nanoelectronics Workshop(2012)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2012-06-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] SiO2/high-k/SiO2/Siゲートスタック構造による界面ダイポール効果の打ち消し-カウンターダイポール効果の実証-2012
- Author(s)
  日比野真也, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] HfO2におけるcubic相からmonoclinic相への結晶相変態過程の速度論的解析2012
- Author(s)
  中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第17回研究会)
- Place of Presentation
  東レ総合研究センター(静岡県)(招待講演)
- Year and Date
  2012-01-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 速度論的考察に基づく良好なSiC/SiO2界面形成2012
- Author(s)
  中坪俊, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] HfO2のcubic相からmonoclinic相への相変態機構に及ぼす酸素の効果2012
- Author(s)
  中嶋泰大, 岩井貴雅, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology2012
- Author(s)
  K.Kita, S.K.Wang, T.Tabata, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39)
- Place of Presentation
  La Fonda Hotel, Santa Fe (U.S.A.)(招待講演)
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology(invited)2012
- Author(s)
  K. Kita, S. K. Wang, T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  39th Conf. Physics and Chemistry of Surfaces and Interfaces,(PCSI-39)
- Place of Presentation
  Santa Fe, USA
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Demonstration of Very High-k HfO2(k～50)by Suppressing Martensitic Transformation in Thin Dielectric Films2011
- Author(s)
  Y.Nakajima, K.Kita, T, Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A.Toriumi, C.H.Lee, S.K.Wang, T.Tabata, M.Yoshida, D.D.Zhao, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  2011 IEEE International Electron Device Meeting (IEDM2011)
- Place of Presentation
  Hilton Washington Hotel, Washington DC (U.S.A.)(招待講演)
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 1.2 nm-EOT Al2O3 /Ge Gate Stack with GeO X-free Interface2011
- Author(s)
  T.Tabata, C.H.Lee, T.Nishimura, S.K.Wang, K.Kita, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Transformation Kinetics of HfO_2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2011 Symposia on VLSI Technology
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k/GeMOSFETにおける移動度特性の向上2011
- Author(s)
  西村知紀,李忠賢,王盛凱,田畑俊行,長汐晃輔,喜多浩之,鳥海明
- Organizer
  第16回ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  Tokyo
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] GS-metal layer formation model at metal/Ge Schottky barrier diode interfa2011
- Author(s)
  T.Nishimura, A.Toriumi
- Organizer
  2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  米国,Arlington
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction2011
- Author(s)
  S.K.Wang, K.Kita, T, Nishimura, K.Nagashio, A, Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] MIGS-metal layer formation model at metal/Ge Schottky barrier diode interface2011
- Author(s)
  T. Nishimura and A. Toriumi
- Organizer
  2011 IEEE 42nd Semiconductor Interface Specialists Conference(SISC)
- Place of Presentation
  Arlington
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions2011
- Author(s)
  T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  名古屋
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 Symposia on VLSI Ttechnology
- Place of Presentation
  Rihga Royal Hotel Kyoto, (Kyoto)
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions2011
- Author(s)
  T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  Nagoya
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] 金属/Ge界面に導入した酸化膜と硫化膜がFermi-level pinningに与える影響の比較2011
- Author(s)
  西村知紀, 李忠賢, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  (震災の影響で予稿集のみ)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, and K. Nagashio
- Organizer
  2011 IEEE International Electron Device Mtg.(IEDM2011)
- Place of Presentation
  Washington DC, USA
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermodynamic Control of Interface Layer Formation in High-k Gate Stacs on 4H-SiC2011
- Author(s)
  S.Nakatsubo, T.Nishimura, K.Kita, K.Nagashio, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge界面に導入した酸化膜と硫化膜がFermi-level pinningに与える影響の比較2011
- Author(s)
  西村知紀,李忠賢,長汐晃輔,喜多浩之,鳥海明
- Organizer
  2011年春季第58回応用物理学関係
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] High-k/Ge MOSFETにおける移動度特性の向上2011
- Author(s)
  西村知紀, 李忠賢, 王盛凱, 田畑俊行, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  第16回ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  東京(東工大)
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Interfacial dipoles at high-k/SiO2 interface observed by X-ray Photoelectron Spectroscopy2010
- Author(s)
  竺立強, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面から脱離するGeOのTDSによる解析2010
- Author(s)
  王盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面反応の理解に基づいたGeO2膜物性の制御とGe-MOSFETの性能向上2010
- Author(s)
  喜多浩之, 王盛凱, 李忠賢, 吉田まほろ, 西村知紀, 長汐晃浦, 鳥海明
- Organizer
  電気気学会電子デバイス研究会 EDD-10-037
- Place of Presentation
  東京
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Long Range Pinning Interaction in Ultra-thin Insulator-inserted Metal/Germanium Junctions2010
- Author(s)
  T.Nishimura, K.Kita, K.Nagashio, A.Toriumi
- Organizer
  2010 Silicon Nanoelectronics Workshop
- Place of Presentation
  米国,Honolulu
- Year and Date
  2010-06-13
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Long Range Pinning Interaction in Ultra-thin Insulator-inserted Metal/Germanium Junctions2010
- Author(s)
  T. Nishimura, K. Kita, K. Nagashio, and A. Toriumi
- Organizer
  2010 Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu
- Year and Date
  2010-06-13
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] ヘテロ界面に於けるバンドオフセットの決定に向けたInternal Photo Emission法の詳細検討2010
- Author(s)
  鷹本靖欣, 西村知紀, 長汐晃輔, 喜之浩之, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] XPSで決定するHigh-k絶縁膜価電子帯エネルギー準位の定量的再検討2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Experimental Demonstration of Higher-k Phase HfO2 through non-equilibrium Thermal Treatment2010
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  217th ECS Mtg.
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Experimental Demonstration of Higher-k Phase Hf02 through Non-equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Ge CMOSの可能性と課題」(招待)2010
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃浦
- Organizer
  2010春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Internal Photo Emission測定における絶縁膜電界の決定方法2010
- Author(s)
  鷹本靖欣, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Electoron Mobility in High-k Ge MISFETs Goes up to Higher2010
- Author(s)
  T.Nishimura, C.H.Lee, S.K.Wang, T.Tabata, K.Kita, K.Nagashio, A.Toriumi
- Organizer
  2010 Symposia on VLSI Technology and Circuits
- Place of Presentation
  米国,Honolulu
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] Stability origin of metastable higher-k phase HfO2 at room temperature2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation2010
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, S.Wang, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks2010
- Author(s)
  F.I.Alzakia, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 極薄TiO2膜の挿入による金属/n-Ge接合におけるオーミック接合の形成2010
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T.Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] X-ray Photoelectron Spectroscopy Study of dipole Effects at High-k/SiO2 Interface2010
- Author(s)
  L..Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2 MISスタックのフラットバンド電圧に対するGeO2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy(TDS)Analysis2010
- Author(s)
  S.K.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K. Kita, L. Q. Zhu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  218th ECS Mtg.
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Electoron Mobility in High-k Ge MISFETs Goes up to Higher2010
- Author(s)
  T. Nishimura, C. H. Lee, S. K. Wang, T. Tabata, K. Kita, K. Nagashio, and A. Toriumi
- Organizer
  2010 Symposiaon VLSI Technology and
- Place of Presentation
  Honolulu
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-22760244
[Presentation] 高圧O2熱処理がGe/GeO2に及ぼす影響2010
- Author(s)
  吉田まほろ, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO2膜とGeO2/Ge界面の独立な制御-2010
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k材料固有のバンド端エネルギー準位のXPSによる定量的評価2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] UV分光エリプソメトリを用いた複素屈折率測定に基づくGe上GeO2薄膜の欠陥評価2010
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] TO-and LO-mode analyses in asymmetric stretching vibrations in ultra thinthermally grown GeO2 on Ge substrate2010
- Author(s)
  M.Yoshida, T.Nishimura, C.H.Lee, K.Kita, K.Nagashio , A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 低圧酸素雰囲気下におけるGe表面の活性酸化2010
- Author(s)
  王盛凱, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のアニール後に観測されるサブギャップ抑制のための高圧酸素圧力の定量化2009
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] X-ray Photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks2009
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Opportunities and Challenges for Ge CMOS-Control of interfacing fields on Ge is a key-"(invited)2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  INFOS2009
- Place of Presentation
  Cambridge, UK
- Year and Date
  2009-06-29
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO2 by Changing O2 Pressure in PDA Process2009
- Author(s)
  M.Yoshida, K.Kita, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K.Kita, S.K.Wang, M.Yoshida, C.H.Lee, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2からのGeO脱離における活性化エネルギーのTDSによる評価2009
- Author(s)
  王盛凱, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Ge-CMOSをめざした固相界面場制御」(招待)2009
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃輔
- Organizer
  2009年秋季70回応用物理学会学術講演会シンポジウム『シリコンナノエレクトロニクスの新展開』
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 180 isotope tracing of GeO Desorption from GeO2/Ge Structure2009
- Author(s)
  S.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge界面におけるショットキー障壁高さのGeO2導入効果-膜厚及び金属による違い-2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  MRS spring meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Kinetic Study of GeO Desorption from Ge/GeO2 system2009
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/ゲルマニウム界面のフェルミレベルピンニングとその制御性2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  ゲート絶縁薄膜、容量膜、機能膜およびメモリ技術(応用物理学会、シリコンテクノロジー分科会)、第113研究集会「ゲートスタック研究の進展-Ge系材料を中心に」との合同開催
- Place of Presentation
  東京
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality2009
- Author(s)
  C.H.Lee, T.Nishimura, N.Saido, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization"(invited)2009
- Author(s)
  K.Kita, C.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation2009
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge高圧酸化におけるGeO脱離抑制に対する全圧と分圧の違い2009
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] XPS Analysis of High-k/SiO2/Si Stacks through Grounded Gate Metal-Estimation of Energy Levels of Electronic Structures of High-k Dielectric Films2009
- Author(s)
  Y.Chikata, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference (SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-05
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Spectroscopic Ellipsometry Study on Defects Generation in GeO2/Ge stacks2009
- Author(s)
  K.Kita, M.Yoshida, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf.on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/ゲルマニウム接合におけるフェルミレベルピンニングの起源と制御2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2/Ge界面からのGeO脱離の抑制によるGeO2/Ge界面特性の向上2008
- Author(s)
  喜多浩之, 鈴木翔, 能村英之, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/絶縁膜およびGe/金属界面を制御したGe-MOSFET技術(依頼)2008
- Author(s)
  鳥海明, 喜多浩之, 西村知紀
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/極薄絶縁膜/Ge接合におけるショットキー障壁変調量の絶縁膜による違い2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2 and metal/Ge interfaces for metal source/drain Ge CMOS (Invited)2008
- Author(s)
  A. Toriumi, T. Nishimura, T. Takahashi, K. Kita
- Organizer
  2008 Materials Research Society Spring Metting
- Place of Presentation
  San Francisco
- Year and Date
  2008-03-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of High-k/Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization (Invited)2007
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  38th IEEE Semiconductor Interface Specialists Conference(SISC2007)
- Place of Presentation
  Arlington, USA
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/High-k膜の界面反応に着目した電気特性の制御2007
- Author(s)
  喜多浩之, 能村英幸, 鈴本翔, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会・シリコンテクノロジー分科会第93回研究集会「ゲートスタツク構造の新展開」
- Place of Presentation
  東広島
- Year and Date
  2007-06-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2/Ge and metal/Ge interfaces (Invited)2007
- Author(s)
  A. Toriumi, T. Nishimura, K. Kita
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge接合界面への極薄GeOxの導入によるフェルミレベルピンニングの緩和2007
- Author(s)
  西村知紀, 喜多浩之, 鳥海明
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interfacing Control of Dielectric Films and Metals on Germanium for CMOS Application (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura, T. Takahashi
- Organizer
  The 34th International Symposium on Compound Semiconductors
- Place of Presentation
  京都
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermally Robust Germanium MIS Gate Stacks with LaYO3 Dielectrics Films2007
- Author(s)
  T. Takahashi, Y. Zhao, T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Effect of Ultra-thin Al2O3 Insertion on Fermi-level Pinning at Metal/Ge Interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Fermi-Level Pinning at Metal/Germanium. Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS-Ge-intimate Material Selection and Interface Conscious Process Flow2007
- Author(s)
  T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, A. Toriumi
- Organizer
  2007 International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics2007
- Author(s)
  S. Suzuki, K. Kita, H. Nomura, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium2007
- Author(s)
  A. Toriumi, K. Kita and T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interface Properties of Ge with Dielectrics and Metals (Invited)2007
- Author(s)
  A. Toriumi, H. Nomura, S. Suzuki, T. Nishimura, K. Kita
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI)
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE): Interfacial Dipole and Band Diagram in Al/Hf(Si)O2/Si MOS Structure2007
- Author(s)
  J. Widiez, K. Kita, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSD)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Organizer
  212th Electrochemical Society Meeting
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19106005

1. TORIUMI Akira (50323530)

# of Collaborated Projects: 2 results

# of Collaborated Products: 106 results
2. KITA Koji (00343145)

# of Collaborated Projects: 2 results

# of Collaborated Products: 105 results
3. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
4. 内山潔 (80403327)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 蓮沼隆 (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. LEE Choong Hyun

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Nishimura Tomonori 西村 知紀

西村 知紀 ニシムラ トモノリ

Nishimura Tmonori 西村 知紀

NISHIMURA Tomonori 西村 知紀

Research Projects

Research Products

Co-Researchers

二次元半導体／絶縁膜界面の電荷生成・移動機構及びバンドアライメントに関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

二次元層状物質を用いた金属/Si，Ge界面のバンドアライメント決定機構の解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Contact resistance lowering at metal/Ge interface by controlling metal property and interface structurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of Fermi level pinning at metal/germanium interface and its alleviation mechanismPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of interface passivation effect on band alignment at metal/semiconductor interfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

単一グレイン有機薄膜トランジスタの形成技術と電気伝導機構に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Understanding of Fermi level pinning at metal/germanium interface based on semiconductor structure2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Almost pinning-free bismuth/Ge and /Si interfaces2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Reconsideration of Metal Work Function at Metal/Semiconductor Interface2017

Author(s)

Journal Title

DOI

Data Source

Nishimura Tomonori 西村知紀

西村知紀ニシムラトモノリ

Nishimura Tmonori 西村知紀

NISHIMURA Tomonori 西村知紀