YATSUO Tsutomu 八尾勉

Researcher Number	10399503
Affiliation (based on the past Project Information) *help	2017: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 2014: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 2011: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 2006 – 2007: 産業技術総合研究所, パワーエレクトロニクス研究センター, 招聘研究員
Review Section/Research Field	Except Principal Investigator Power engineering/Power conversion/Electric machinery / 電力工学・電気機器工学
Keywords	Except Principal Investigator ワイドバンドギャップ / パワーデバイス / SiC / パワーエレクトロニクス / 静電誘導トランジスタ / 高速半導体スイッチ / パルスパワー / ワイドバンドギャップ半導体 / 電力工学 / 炭化硅素 / 省エネルギー / 炭化珪素 / シリコンカーバイド

Pulse power application of SiC power devices with ultra-low loss and high switching speed
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Improvement in th e reli ability of super low power loss SiC static induction devices
- Principal Investigator
  
  YAN0 Koji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Research on the maximum performance of silicon carbide static induction devices
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  University of Yamanashi

All 2014 2013 2012 2011 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014
- Author(s)
  A. Takatsuka,Y.Tanaka,K.Yano,N.Matsumoto,T.Yatsuo,and K.Arai
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 899-902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560327
[Journal Article] 1270V, 1.21mΩcm2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Tanaka, K. Arai, T. Yatsuo
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, M.Okamoto, and K. Arai
- Journal Title
  
  Materials Science Forum
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩ cm^2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y.Tanaka, K.Yano, M.Okamoto, A.Tanaka, K.Arai, and T.Yatsuo
- Journal Title
  
  Materials Science Forum
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of furnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Arai
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors(BG-SITs)2007
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Fukuda, K. Arai
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 170-171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩcm2 SiC Buried gate static induction transistors(SiC-BGSITs)2007
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Arai, T. Yatsuo
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 227-228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] SiC埋め込みゲート型SITにおけるオン抵抗の温度特性2014
- Author(s)
  望月雄貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] 3kVノーマリーオフ型SiC-BGSITの設計2014
- Author(s)
  飯塚大臣、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフ型SiC-BGSITのターンオン性能の改善2013
- Author(s)
  勝俣公貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  SiC及び関連半導体研究台22回講演会
- Place of Presentation
  埼玉会館
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフSiC埋め込みゲートSITのスイッチング特性改善2012
- Author(s)
  中嶋　竜基、矢野　浩司、田中　保宣、八尾　勉、高塚　章夫
- Organizer
  SIC及び関連ワイドギャップ半導体研究会第２１回講演会
- Place of Presentation
  大阪市中央公会堂（大阪府）
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会(本大会は東日本震災のため中止になりましたが、予稿集は震災前に公表されています)
- Place of Presentation
  大阪大学
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] Application of SiC-BGSITs for DC-DC converters, European Silicon Carbide and Related Matterials2008
- Author(s)
  Y.Tanaka, K.Yano, A.Takatsuka, K.Arai, and T.Yatsuo
- Organizer
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] AraiShort circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, and K.
- Organizer
  European Silicon Carbide and Related Matterials
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Application of SiC-BGSITs for DC-DC converters2008
- Author(s)
  Y. Tanaka, K. Yano, A. Takatsuka, K. Arai, T. Yatsuo
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Short circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] 3.3 kV SiC Buried Gate Static Induction Transistors (SiC-BGSITs) With Ultra Low Specific On-Resistance
- Author(s)
  Yasunori TANAKA , Akio TAKATSUKA, Koji YANO, Norio MATSUMOTO, Tsutomu YATSUO
- Organizer
  European Conference Silicon Carbide & Related Materials
- Place of Presentation
  Grenoble,France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-24560327

1. TANAKA Yasunori (20357453)

# of Collaborated Projects: 5 results

# of Collaborated Products: 18 results
2. YANO Koji (90252014)

# of Collaborated Projects: 4 results

# of Collaborated Products: 18 results
3. YAMAMOTO Masayuki (00511320)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results

YATSUO Tsutomu 八尾 勉

Research Projects

Research Products

Co-Researchers

Pulse power application of SiC power devices with ultra-low loss and high switching speed

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Improvement in th e reli ability of super low power loss SiC static induction devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on the maximum performance of silicon carbide static induction devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014

Author(s)

Journal Title

Data Source

[Journal Article] 1270V, 1.21mΩcm2 SiC buried gate static induction transistors (SiC-BGSITs)2009

Author(s)

Journal Title

Data Source

[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors (BG-SITs)2009

Author(s)

Journal Title

Data Source

[Journal Article] 1270V, 1.21mΩ cm^2 SiC buried gate static induction transistors (SiC-BGSITs)2009

Author(s)

Journal Title

Data Source

[Journal Article] Three dimensional analysis of furnoff operation of SiC buried gate static induction transistors (BG-SITs)2009

Author(s)

Journal Title

Data Source

[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors(BG-SITs)2007

Author(s)

Journal Title

Data Source

[Journal Article] 1270V, 1.21mΩcm2 SiC Buried gate static induction transistors(SiC-BGSITs)2007

Author(s)

Journal Title

Data Source

[Presentation] SiC埋め込みゲート型SITにおけるオン抵抗の温度特性2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 3kVノーマリーオフ型SiC-BGSITの設計2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ゲートオーバードライブによるノーマリーオフ型SiC-BGSITのターンオン性能の改善2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] ゲートオーバードライブによるノーマリーオフSiC埋め込みゲートSITのスイッチング特性改善2012

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011

Author(s)

YATSUO Tsutomu 八尾勉