• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Kubo Toshiharu  久保 俊晴

ORCIDConnect your ORCID iD *help
… Alternative Names

Toshiharu Kubo  久保 俊晴

KUBO Toshiharu  久保 俊晴

久保 俊晴  クボ トシハル

Less
Researcher Number 10422338
Other IDs
Affiliation (Current) 2025: 名古屋工業大学, 工学(系)研究科(研究院), 准教授
Affiliation (based on the past Project Information) *help 2023 – 2024: 名古屋工業大学, 工学(系)研究科(研究院), 准教授
2019 – 2021: 名古屋工業大学, 工学(系)研究科(研究院), 准教授
2011: 名古屋工業大学, 大学院・工学研究科, 助教
2009: 北海道大学, 量子集積エレクトロニクス研究センター, 非常勤研究員
2007: 東京大学, 大学院・工学系研究科, 研究機関研究員
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Except Principal Investigator
Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords
Principal Investigator
MOS構造 / 緩衝層 / GaN on Si / 歪超格子 / Si / 縦型デバイス / Si基板 / GaN / 極微細金属パターン付き基板 / EBSD … More / ラマン分光 / アニーリング / 極微細金属パターン / グラフェン膜 / ラ マ ン 分光 / ア ニ ー リ ン グ / 極微細金属パ タ ー ン / 金属凝集法 / グ ラ フ ェ ン 膜 / 電子ビーム露光 / 金属凝集 / FET / グラフェン … More
Except Principal Investigator
電気化学酸化 / 電流コラプス / HEMT / 多重台形チャネル / AlInN / 窒素空孔 / ドライエッチング / ICP / ALD / へテロ接合 / 界面準位 / MMC / C-V / AlGaN / GaN / トランジスタ / 絶縁膜 / 電子準位 / 表面・界面 / 窒化ガリウム / コーティング / 中性子照射 / 増殖材料 / トリチウム / ブランケット Less
  • Research Projects

    (4 results)
  • Research Products

    (11 results)
  • Co-Researchers

    (10 People)
  •  Si基板上GaN縦型パワーデバイスの低抵抗および高耐圧化に関する研究Principal Investigator

    • Principal Investigator
      久保 俊晴
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Nagoya Institute of Technology
  •  Fabrication of high-performance and low-power-consumption graphene FETs using substrates with ultra-fine metal patternsPrincipal Investigator

    • Principal Investigator
      Toshiharu Kubo
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Nagoya Institute of Technology
  •  Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  Tritium behavior in breeding materials and permeation barrier coatings for fusion blanket

    • Principal Investigator
      TERAI Takayuki
    • Project Period (FY)
      2007 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo

All 2023 2021 2020 2019 2010 2009

All Journal Article Presentation

  • [Journal Article] Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films2021

    • Author(s)
      Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 11 Pages: 116503-116503

    • DOI

      10.35848/1882-0786/ac30ed

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Journal Article] Variation of surface potentials of Si-doped Al_xGa_1-xN (0 < x < 0.87) grown on AlN/sapphire template by metal-organic vapor phase epitaxy2010

    • Author(s)
      T. Kubo, H. Taketomi, H. Miyake, K. Hiramatsu, and T. Hashizume
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Issue: 2 Pages: 21004-21004

    • DOI

      10.1143/apex.3.021004

    • Data Source
      KAKENHI-PROJECT-21246007
  • [Journal Article] Variation of surface potentials of Si-doped Al_xGa_<1-x>N(0<x<0.87)grown on AlN/sapphire template by metal-organic vapor phase epitaxy2010

    • Author(s)
      T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
    • Journal Title

      Appl.Phys.Express 3(論文番号021004-1-3)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Presentation] 電流狭窄層に高抵抗歪超格子層を用いたSi基板上AlGaN/GaN縦型デバイス2023

    • Author(s)
      久保俊晴、小池貴也、神谷俊輝、江川孝志
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26158
  • [Presentation] 転写フリーグラフェンの結晶性に及ぼすNi金属触媒の結晶性の効果II2021

    • Author(s)
      高橋明空、芝南々子、久保俊晴、三好実人、江川孝志
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Presentation] 微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェン膜の作製2021

    • Author(s)
      高橋明空、加藤一朗、久保俊晴、三好実人、江川孝志
    • Organizer
      第69回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Presentation] 転写フリーグラフェンFETの電気特性に対する Ni金属触媒の結晶性の効果2020

    • Author(s)
      小林幹, ドルジダウガ ビルグーン, 高橋明空, 久保俊晴, 三好実人, 江川孝志
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Presentation] 触媒金属凝集法を用いて作製した転写フリー多層膜グラフェンの光応答特性の評価22019

    • Author(s)
      Dorjdagva Bilguun, 小林幹, 久保俊晴, 三好実人, 江川孝志
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Presentation] 転写フリーグラェンの結晶性に及ぼすNi金属触媒の結晶性の効果2019

    • Author(s)
      小林幹, Dorjdagva Bilguun, 久保俊晴, 三好実人, 江川孝志
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04531
  • [Presentation] Chemical and Electronic Properties of MOVPE-grown Al_xGa_<1-x>N Surfaces(0.25<x<0.68)2009

    • Author(s)
      T.Kubo, K.Sugawara, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-21246007
  • [Presentation] Characterization of Schottky interface properties and deep levels of Al_xGa_<1-x>N(0.25<x<0.68)grown by MOVPE2009

    • Author(s)
      K.Sugawara, T.Kubo, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-21246007
  • 1.  TERAI Takayuki (90175472)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 2.  AKIHIRO Suzuki (80332188)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  TANAKA Teruya (30353444)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  HOSHINO Tsuyoshi (80370469)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  SHIMURA Kenichiro (90391292)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 7.  SATO Taketomo (50343009)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  KOGA Hiroaki (80519413)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  AKAZAWA Masamichi (30212400)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  三好 実人 (30635199)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi