INOUE Shigeru 井上茂

Researcher Number	10470113
Affiliation (based on the past Project Information) *help	2012: 東京大学, 生産技術研究所, その他 2008 – 2011: The University of Tokyo, 生産技術研究所, 特任助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Inorganic materials/Physical properties
Keywords	Principal Investigator 表面プラズモン / III族窒化物 / III族窒化物半導体 / FBAR / 結晶成長

Research Projects
(3 results)
Research Products
(12 results)

III族窒化物半導体／金属量子多層構造による高温域熱電変換素子の開発Principal Investigator
- Principal Investigator
  
  井上茂
- Project Period (FY)
  2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  The University of Tokyo
Improvement in efficiencies of light emitting devices by surface plasmonPrincipal Investigator
- Principal Investigator
  
  INOUE Shigeru
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Fabrication of single crystalline FBAR by the use of pulsed sputtering depositionPrincipal Investigator
- Principal Investigator
  
  INOUE Shigeru
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo

All 2012 2011 2009

All Journal Article Presentation

[Journal Article] 金属基板上への窒化物半導体低温成長2012
- Author(s)
  井上茂, 太田実雄, 小林篤, 藤岡洋
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 38巻 Pages: 249-254
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686031
[Journal Article] Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers2009
- Author(s)
  岡本浩一郎, 井上茂, 中野貴之, 太田実雄, 藤岡洋
- Journal Title
  
  Journal of Crystal Growth 311巻
  
  Pages: 1311-1315
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760209
[Journal Article] Epitaxial growth of GaN on single crystal Mo substrates using HfN buffer layers2009
- Author(s)
  岡本浩一郎, 井上茂, 中野貴之, 太田実雄, 藤岡洋
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 1311-1315
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760209
[Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012
- Author(s)
  丹所昂平,井上茂,太田実雄,藤岡洋
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22686031
[Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012
- Author(s)
  丹所昂平, 井上茂, 太田実雄, 藤岡洋
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22686031
[Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011
- Author(s)
  丹所昂平,田村和也,井上茂,太田実雄,藤岡洋
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22686031
[Presentation] フルカラーInGaN発光ダイオードの作製と評価2011
- Author(s)
  田村和也,太田実雄,丹所昂平,小林篤,井上茂,藤岡洋
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-22686031
[Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011
- Author(s)
  丹所昂平, 田村和也, 井上茂, 太田実雄, 藤岡洋
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22686031
[Presentation] GaN/HfN/Si(110)ヘテロ構造の作製と界面の評価2009
- Author(s)
  宋顕成, 井上茂, 太田実雄, 藤岡洋, 伊勢村雅士
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20760209
[Presentation] Rh(111)基板上へエピタキシャル成長したAlGaNの面内配向関係2009
- Author(s)
  岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋大学
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-20760209
[Presentation] Rh(111)基板上ヘエピタキシャル成長したAlGaNの面内配向関係2009
- Author(s)
  岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋大学
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PROJECT-20760209
[Presentation] GaN/HfN/Si(110)へテロ構造の作製と界面の評価2009
- Author(s)
  宋顕成, 井上茂, 太田実雄, 藤岡洋, 伊勢村雅士
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20760209

INOUE Shigeru 井上 茂

Research Projects

Research Products

III族窒化物半導体／金属量子多層構造による高温域熱電変換素子の開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Improvement in efficiencies of light emitting devices by surface plasmonPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of single crystalline FBAR by the use of pulsed sputtering depositionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] 金属基板上への窒化物半導体低温成長2012

Author(s)

Journal Title

Data Source

[Journal Article] Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers2009

Author(s)

Journal Title

Data Source

[Journal Article] Epitaxial growth of GaN on single crystal Mo substrates using HfN buffer layers2009

Author(s)

Journal Title

Data Source

[Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] フルカラーInGaN発光ダイオードの作製と評価2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] GaN/HfN/Si(110)ヘテロ構造の作製と界面の評価2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Rh(111)基板上へエピタキシャル成長したAlGaNの面内配向関係2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Rh(111)基板上ヘエピタキシャル成長したAlGaNの面内配向関係2009

Author(s)

Organizer

Place of Presentation

Year and Date

INOUE Shigeru 井上茂