Omura Ichiro 大村一郎

… Alternative Names

大村一郎オオムライチロウ

OMURA Ichiro 大村一郎

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Researcher Number	10510670
Other IDs
Affiliation (Current)	2025: 九州工業大学, 大学院生命体工学研究科, 教授
Affiliation (based on the past Project Information) *help	2023: 九州工業大学, 大学院生命体工学研究科, 教授 2017 – 2020: 九州工業大学, 大学院生命体工学研究科, 教授 2015 – 2016: 九州工業大学, 大学院工学研究院, 教授 2012: 九州工業大学, 工学(系)研究科(研究院), 教授 2012: 九州工業大学, 工学研究院, 教授 2010 – 2011: 九州工業大学, 大学院・工学研究院, 教授
Review Section/Research Field	Principal Investigator Basic Section 21010:Power engineering-related / Power engineering/Power conversion/Electric machinery / Power engineering/Power conversion/Electric machinery Except Principal Investigator Basic Section 21010:Power engineering-related / Power engineering/Power conversion/Electric machinery
Keywords	Principal Investigator パワー半導体 / 窒化ガリウム（GaN） / TCADシミュレーション / コラプス現象 / GaNパワー半導体 / PiNダイオード / パワー / IGBT / バイポーラ / パワー半導体デバイス … More / 終端構造 / ワイドバンドギャップ / 不純物活性化 / ダイヤモンド / pip構造 / RESURF構造 / 超高耐圧パワー素子 / 二酸化炭素排出削減 / 省エネルギー / 電子デバイス・機器 / 電力用ダイオード / パワーエレクトロニクス … More Except Principal Investigator 予知保全 / 電流センサー / ダブルパルス試験 / パワーサイクル試験 / 電流センサ / 簡易モジュール / パワーモジュール / 故障解析 / 温度分布 / 超音波 / 超音波顕微鏡 / 信頼性 / 熱解析 / パワーデバイス Less

Extremely low energy loss bipolar power semiconductor devicePrincipal Investigator
- Principal Investigator
  
  大村一郎
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  Kyushu Institute of Technology
インフラ設備用パワー半導体モジュールの遠隔異常監視機能の開発
- Principal Investigator
  
  附田正則
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  Kyushu Institute of Technology
Diamond Power Electronics: Innovative Device TechnologyPrincipal Investigator
- Principal Investigator
  
  Omura Ichiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  Kyushu Institute of Technology
窒化ガリウムパワー半導体素子の信頼性に関する研究Principal Investigator
- Principal Investigator
  
  大村一郎
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  Kyushu Institute of Technology
Temperature distribution imaging for power devices by ultrasonic wave
- Principal Investigator
  
  Watanabe Akihiko
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  Kyushu Institute of Technology
Innovative Low Loss Semiconductor Rectifier with Pulsed Carrier Injection MechanismPrincipal Investigator
- Principal Investigator
  
  OMURA Ichiro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  Kyushu Institute of Technology

All 2018 2013 2012 2011 2010

All Journal Article Presentation Patent

[Journal Article] Role of Simulation Technology for the Progress in Power Devices and Their Applications2013
- Author(s)
  Hiromichi Ohashi, Ichiro Omura
- Journal Title
  
  IEEE TRANSACTION ON ELECTRON DEVICES
  
  Volume: Vol.60, No.2 Issue: 2 Pages: 528-536
- DOI
  10.1109/ted.2012.2228272
- NAID
  120005841742
- URL
  http://dx.doi.org/
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360118
[Journal Article] IGBT Scaling Principle Toward CMOS Compatible Wafer Processes2012
- Author(s)
  Masahiro Tanaka, Ichiro Omura
- Journal Title
  
  Solid-State Electronics
  
  Volume: vol.80 Pages: 118-123
- DOI
  10.1016/j.sse.2012.10.020
- NAID
  120005841745
- URL
  http://dx.doi.org/
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360118
[Journal Article] Structure Oriented Compact Model for Advanced Trench IGBTs without Fitting Parameters for Extreme Condition: part I2011
- Author(s)
  Masahiro Tanaka, Ichiro Omura
- Journal Title
  
  Microelectronics Reliability
  
  Volume: vol.51 Issue: 9-11 Pages: 1933-1937
- DOI
  10.1016/j.microrel.2011.07.050
- URL
  http://dx.doi.org/
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 高電圧絶縁ゲート型電力用半導体装置2012
- Inventor(s)
  大村一郎、田中雅浩、三木大和
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Number
  2012-123462
- Filing Date
  2012-05-30
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2012
- Inventor(s)
  大村一郎、松本泰明、津田基裕、
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Rights Type
  特許
- Filing Date
  2012-05-14
- Overseas
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2012
- Inventor(s)
  大村一郎、松本泰明、津田基裕、附田正則
- Industrial Property Rights Holder
  九州工業大学
- Filing Date
  2012-05-17
- Overseas
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2012
- Inventor(s)
  大村一郎、松本泰明、津田基裕、附田正則
- Industrial Property Rights Holder
  九州工業大学
- Filing Date
  2012-05-14
- Overseas
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 高電圧電力用半導体装置2012
- Inventor(s)
  大村一郎、瀬戸康太、附田正則
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Number
  2012-123461
- Filing Date
  2012-05-30
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 高電圧絶縁ゲート型電力用半導体装置およびその製造方法2012
- Inventor(s)
  大村一郎、田中雅浩、附田正則、三木大和
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Number
  2012-195347
- Filing Date
  2012-09-05
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2012
- Inventor(s)
  大村一郎、松本泰明、津田基裕、
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Rights Type
  特許
- Filing Date
  2012-05-17
- Overseas
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 高電圧絶縁ゲート型電力用半導体装置2012
- Inventor(s)
  大村一郎、田中雅浩、附田正則、
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-195347
- Filing Date
  2012-09-05
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2011
- Inventor(s)
  大村一郎、松本泰明、津田基裕、附田正則
- Industrial Property Rights Holder
  九州工業大学
- Patent Publication Number
  2012-243918
- Filing Date
  2011-05-18
- Data Source
  KAKENHI-PROJECT-22360118
[Patent] 半導体装置及び駆動方法2011
- Inventor(s)
  大村一郎, 松本泰明, 津田基裕, 附田正則
- Industrial Property Rights Holder
  国立大学法人九州工業大学
- Industrial Property Number
  2011-111883
- Filing Date
  2011-05-18
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Prospects of reliable GaN technology in power devices2018
- Author(s)
  Giorgia Longobardi, Ichiro Omura
- Organizer
  BIT’s 4th Annual World Congress of Smart Materials-2018 (WCSM-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17F17809
[Presentation] 「高耐圧パワーデバイス用スケールダウン・テストヘッドの開発」2013
- Author(s)
  松吉峻、附田正則（ICSEAD）、平井秀敏、大村一郎
- Organizer
  電子情報通信学会
- Place of Presentation
  熊本、日本
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] 高耐圧パワーデバイス用スケールダウン・テストヘッドの開発2013
- Author(s)
  松吉峻、附田正則(ICSEAD)、平井秀敏、大村一郎
- Organizer
  電子情報通信学会 IEICE Technical Report EE2012-46
- Place of Presentation
  熊本
- Year and Date
  2013-01-24
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Lateral Power Devices: from LDMOS, LIGBT to GaN2012
- Author(s)
  Ichiro Omura
- Organizer
  2012 International Symposium on VLSI Technology
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Universal Trench Edge Termination Design2012
- Author(s)
  Kota Seto, Ryu Kamibaba, Masanori Tsukuda and Ichiro Omura
- Organizer
  Proc. Of ISPSD
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] “Universal Trench Edge Termination Design”2012
- Author(s)
  Kota Seto, Ryu Kamibaba, Masanori Tsukuda, Ichiro Omura
- Organizer
  The 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD’12)
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Semiconductor Power Switches: Principles and the Future2012
- Author(s)
  Ichiro Omura
- Organizer
  Proc. Of ISPSD
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Scattering Parameter Approach to Power MOSFET Design for EMI2012
- Author(s)
  Masanori Tsukuda, Keiichiro Kawakami and Ichiro Omura
- Organizer
  Proc. Of ISPSD
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] “Lateral Power Devices: from LDMOS, LIGBT to GaN”2012
- Author(s)
  Ichiro Omura
- Organizer
  2012　International Symposium on VLSI Technology, Systems and Applications VLSI Design, Automation and Test
- Place of Presentation
  Hsinchu, Taiwan
- Invited
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility2012
- Author(s)
  Masahiro Tanaka and Ichiro Omura
- Organizer
  Proc. Of ISPSD
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] “Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility”2012
- Author(s)
  Masahiro Tanaka, Ichiro Omura
- Organizer
  The 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD’12)
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] “Scattering Parameter Approach to Power MOSFET Design for EMI”2012
- Author(s)
  Masanori Tsukuda, Keiichiro Kawakami, Ichiro Omura
- Organizer
  The 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD’12)
- Place of Presentation
  Bruges, Belgium
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Ultra Low Loss Trench Gate PCI-PiN Diode with V_F<350mV2011
- Author(s)
  Motohiro Tsuda, Yasuaki Matsumoto, Ichiro Omura
- Organizer
  The 23rd International Symposium on Power Semicon ductor Devices & IC's
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Ultra Low Loss Trench Gate PCI-PiN Diode with VF<350mV2011
- Author(s)
  Motohiro Tsuda, Yasuaki Matsumoto, Ichiro Omura
- Organizer
  he 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD'11)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Challenge to the Barrier of Conduction Loss in PiN Diode toward VF<300 mV with Pulsed Carrier Injection Concept2010
- Author(s)
  Yasuaki Matumoto, Kenichi Takahama, Ichiro Omura
- Organizer
  The 22^<nd> International Symposium on Power Semiconductor Devices and ICs (ISPSD'10)
- Place of Presentation
  Hiroshima, Japan
- Data Source
  KAKENHI-PROJECT-22360118
[Presentation] Challenge to the Barrier of Conduction Loss in PiN Diode toward VF<300 mV with Pulsed Carrier Injection Concept2010
- Author(s)
  Yasuaki Matumoto, Kenichi Takahama, Ichiro Omura
- Organizer
  The 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD'10)
- Place of Presentation
  Hiroshima, Japan
- Data Source
  KAKENHI-PROJECT-22360118

1. Watanabe Akihiko (80363406)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. 附田正則 (00579154)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. 長谷川一徳 (80712637)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. LONGOBARDI GIORGIA

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Omura Ichiro 大村 一郎

大村 一郎 オオムラ イチロウ

OMURA Ichiro 大村 一郎

Research Projects

Research Products

Co-Researchers

Extremely low energy loss bipolar power semiconductor devicePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

インフラ設備用パワー半導体モジュールの遠隔異常監視機能の開発

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Diamond Power Electronics: Innovative Device TechnologyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

窒化ガリウムパワー半導体素子の信頼性に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Temperature distribution imaging for power devices by ultrasonic wave

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Innovative Low Loss Semiconductor Rectifier with Pulsed Carrier Injection MechanismPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Role of Simulation Technology for the Progress in Power Devices and Their Applications2013

Author(s)

Journal Title

DOI

NAID

URL

Data Source

[Journal Article] IGBT Scaling Principle Toward CMOS Compatible Wafer Processes2012

Author(s)

Journal Title

DOI

NAID

URL

Data Source

[Journal Article] Structure Oriented Compact Model for Advanced Trench IGBTs without Fitting Parameters for Extreme Condition: part I2011

Author(s)

Journal Title

DOI

URL

Data Source

[Patent] 高電圧絶縁ゲート型電力用半導体装置2012

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Patent] 半導体装置及び駆動方法2012

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 半導体装置及び駆動方法2012

Inventor(s)

Industrial Property Rights Holder

Filing Date

Data Source

[Patent] 半導体装置及び駆動方法2012

Omura Ichiro 大村一郎

大村一郎オオムライチロウ

OMURA Ichiro 大村一郎