Yin You インユウ

… Alternative Names

YIN You インユウ

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Researcher Number	10520124
Other IDs
Affiliation (Current)	2025: 群馬大学, 大学院理工学府, 教授
Affiliation (based on the past Project Information) *help	2021 – 2025: 群馬大学, 大学院理工学府, 教授 2020: 群馬大学, 大学院理工学府, 准教授 2016: 群馬大学, 理工学研究科, 助教 2014 – 2015: 群馬大学, 大学院理工学府, 助教 2013: 群馬大学, 理工学研究院, 助教 2009 – 2012: Gunma University, 大学院・工学研究科, 助教
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment / Microdevices/Nanodevices Except Principal Investigator Basic Section 60040:Computer system-related
Keywords	Principal Investigator 人工知能 / シナプス素子 / 高速 / 不揮発メモリ / 相変化メモリ / MIMダイオード / 光レクテナ / 太陽光発電 / 多機能 / ニューロン素子 … More / 人工知能素子 / ニューロン / シナプス / 発火機能 / 学習機能 / 超格子 / 超高速 / 相変化 / 人工シナプス / 高速化 / 相変化材料 / バラツキ / 材料工学 / パルス工学 / 新相変化材料 / 高信頼性 / アモルファス化 / 結晶化 / 制御 / カルコゲナイド / 多値記録 / 不揮発性メモリ / ナノワイヤ / 電子線描画 / 縮小化 / ナノ / 低消費電力 / 微細化 … More Except Principal Investigator 計算機システム / 相変化メモリ / 高信頼化 / 低電力化 / ニューラルネット / 誤差許容計算 / メモリシステム Less

原子移動制御を用いた超高性能な革新的脳型情報処理素子の創製とその応用展開Principal Investigator
- Principal Investigator
  
  インユウ
- Project Period (FY)
  2025 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Gunma University
Optical rectenna with high photoelectric conversion efficiency using innovative I-V asymmetry-enhanced MIM diodePrincipal Investigator
- Principal Investigator
  
  インユウ
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Gunma University
Artificial neuron with all functions using only one functional materialPrincipal Investigator
- Principal Investigator
  
  インユウ
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Gunma University
Ultrafast Superlattice Phase-change Artificial SynapsePrincipal Investigator
- Principal Investigator
  
  Yin You
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Gunma University
Write latency reduction on PCM for approximate computing
- Principal Investigator
  
  Kazuteru NAMBA
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 60040:Computer system-related
- Research Institution
  Chiba University
Fast and reliable multilevel phase-change memory for practical applicationPrincipal Investigator
- Principal Investigator
  
  Yin You
- Project Period (FY)
  2012 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Gunma University
Research on nano wire phase-change memoryPrincipal Investigator
- Principal Investigator
  
  YIN You
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Gunma University

All 2024 2023 2022 2021 2016 2015 2014 2013 2012 2011 2010 2009 Other

All Journal Article Presentation

[Journal Article] Characterization of undoped and N-Ti codoped Zn5Sb3Te chalcogenides2023
- Author(s)
  Fujiwara Takao、Niiyama Koji、Yin You
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SG Pages: SG1023-SG1023
- DOI
  10.35848/1347-4065/acbda5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K18788, KAKENHI-PROJECT-21H01382
[Journal Article] N-Doped GeTe for Phase-Change Device with High Reliability2023
- Author(s)
  S. Yahagi, and Y. Yin
- Journal Title
  
  Journal of Mechanical and Electrical Intelligent System
  
  Volume: 6 Pages: 10-14
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01382
[Journal Article] N-Doped GeTe for Phase-Change Device with High Reliability2023
- Author(s)
  S. Yahagi, and Y. Yin
- Journal Title
  
  Journal of Mechanical and Electrical Intelligent System
  
  Volume: 6 Pages: 10-14
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K18788
[Journal Article] Braille recognition by E-skin system based on binary memristive neural network2023
- Author(s)
  Liu Y. H.、Wang J. J.、Wang H. Z.、Liu S.、Wu Y. C.、Hu S. G.、Yu Q.、Liu Z.、Chen T. P.、Yin Y.、Liu Y.
- Journal Title
  
  Scientific Reports
  
  Volume: 13 Issue: 1
- DOI
  10.1038/s41598-023-31934-9
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Journal Article] Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse2021
- Author(s)
  Y. Yin
- Journal Title
  
  Journal of Mechanical and Electrical Intelligent System
  
  Volume: 4 Pages: 13-18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01382
[Journal Article] Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film2016
- Author(s)
  Y. Yin, S. Iwashita, S. Hosaka, T. Wang, J. Li, Y. Liu, and Q. Yu
- Journal Title
  
  Appl. Surf. Sci.
  
  Volume: 369 Pages: 348-353
- DOI
  10.1016/j.apsusc.2016.02.057
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory2016
- Author(s)
  Y. Yin, Y. Zhang, Y. Takehana, R. Kobayashi, H. Zhang, and S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 6S1 Pages: 06GG07-06GG07
- DOI
  10.7567/jjap.55.06gg07
- NAID
  210000146629
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Localization of Joule heating in phase-change memory with incorporated nanostructures and nanolayer for reducing reset current2015
- Author(s)
  Y. Yin, and T. Wang
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 62 Issue: 7 Pages: 2184-2189
- DOI
  10.1109/ted.2015.2429689
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Flexible one diode-one phase change memory array enabled by block copolymer self-assembly2015
- Author(s)
  B. Mun, B. You, S. Yang, H. Yoo, J. Kim, W. Park, Y. Yin, M. Byun, Y. Jung, and K. Lee
- Journal Title
  
  ACS Nano
  
  Volume: 9 Issue: 4 Pages: 4120-4128
- DOI
  10.1021/acsnano.5b00230
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-change Nanostructures with an Extremely Low Switching Current2015
- Author(s)
  W. I. Park, J. M. Kim, J. W. Jeong, Y. H. Hur,Y. J. Choi, S.-H. Kwon,S. Hong, Y. Yin, Y. S. Jung, and K. H. Kim
- Journal Title
  
  Chemistry of Materials
  
  Volume: 27 Issue: 7 Pages: 2673-2677
- DOI
  10.1021/acs.chemmater.5b00542
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Oxygen-doped Sb2Te3 for high-performance phase-change memory2015
- Author(s)
  Y. Yin, S. Morioka, S. Kozaki, R. Satoh, and S. Hosaka
- Journal Title
  
  Appl. Surf. Sci.
  
  Volume: 349 Pages: 230-234
- DOI
  10.1016/j.apsusc.2015.04.229
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] The Dependence of Crystallization on Temperature in the Nanosecond Timescale for GeTe-based Fast Phase-Change Resistor2015
- Author(s)
  H. Zhang, Y. Zhang, Y. Yin, and S. Hosaka
- Journal Title
  
  Chemical Physics Letters
  
  Volume: 650 Pages: 102-106
- DOI
  10.1016/j.cplett.2016.03.002
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Ultra-multilevel-storage phase‐change memory2014
- Author(s)
  Y. Yin, S. Hosaka
- Journal Title
  
  Advanced Materials Research
  
  Volume: 936 Pages: 599-602
- DOI
  10.4028/www.scientific.net/amr.936.599
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Electron beam lithography for fabrication of nano phase-change memory2014
- Author(s)
  Y. Yin, T. Itagawa, and S. Hosaka
- Journal Title
  
  Applied Mechanics and Materials
  
  Volume: 481 Pages: 30-35
- DOI
  10.4028/www.scientific.net/amm.481.30
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory2014
- Author(s)
  R. I. Alip, Z. Mohamad, Y. Yin, and S. Hosaka
- Journal Title
  
  Int. J. of Nanotechnology
  
  Volume: 11 Issue: 5/6/7/8 Pages: 389-395
- DOI
  10.1504/ijnt.2014.060556
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Recrystallization process controlled by staircase pulse in phase change memory2014
- Author(s)
  Y. Yin, R. Kobayashi, S. Hosaka
- Journal Title
  
  Microelectron. Eng,
  
  Volume: 113 Pages: 61-65
- DOI
  10.1016/j.mee.2013.07.009
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] TiSiN films by reactive RF magnetron co-sputtering for ultra-low-current phase-change memory2014
- Author(s)
  Y. Yin, and S. Hosaka
- Journal Title
  
  Applied Mechanics and Materials
  
  Volume: 392 Pages: 702-706
- DOI
  10.4028/www.scientific.net/amm.392.702
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Controlled crystallization process of phase-change memory device by a separate heater structure2014
- Author(s)
  R. Alip, Z. Mohamad, Y. Yin, and S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 596 Pages: 107-110
- DOI
  10.4028/www.scientific.net/kem.596.107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Volume-change-free GeTeN film for high-performance phase-change memory2013
- Author(s)
  Y. Yin, H. Zhang, S. Hosaka, Y. Liu, and Q. Yu
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 46 Issue: 50 Pages: 5053111-5
- DOI
  10.1088/0022-3727/46/50/505311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction2013
- Author(s)
  W. I. Park, B. K. You, B. H. Mun, H. K. Seo, J. Y. Lee, S. Hosaka, Y. Yin, C. Ross, K. J. Lee, Y. S. Jung
- Journal Title
  
  ACS Nano
  
  Volume: 7 Issue: 3 Pages: 2651-2658
- DOI
  10.1021/nn4000176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] A novel phase-change memory with a separate heater characterized by constant resistance for multilevel storage2013
- Author(s)
  R. I. Alip, R. Kobayashi, Y. Zhang, Z. Mohamad, Y. Yin, and S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 534 Pages: 136-140
- DOI
  10.4028/www.scientific.net/kem.534.136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Multi-level storage in lateral phase-change memory : from 3 to 16 resistance levels2013
- Author(s)
  Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, and S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 534 Pages: 131-135
- DOI
  10.4028/www.scientific.net/kem.534.131
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Current density enhancement nano-contact phase-change memory for low writing current2013
- Author(s)
  Y. Yin, S. Hosaka, W. I. Park, Y. S. Jung, K. J. Lee, B. K. You, Y. Liu, and Q. Yu
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 103 Issue: 3 Pages: 0331161-5
- DOI
  10.1063/1.4816080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686042
[Journal Article] Material engineering for low power consumption and multi-level storage in lateral phase-change memory2012
- Author(s)
  Y. Yin, R. I. Alip, Y. Zhang, S. Hosaka
- Journal Title
  
  Advanced Materials Research
  
  Volume: 490-495 Pages: 3286-3290
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Large-Area2012
- Author(s)
  J. Yoon, H. Jeong, S. Hong, Y. Yin, H. Moon, S. Jeong, J. Han, Y. Kim, Y. Kim, Heon Lee, S Kim, J. Lee
- Journal Title
  
  Scalable Fabrication of Conical TiN/GST/TiN Nanoarray for Low-Power Phase Change Memory Journal of Materials Chemistry
  
  Volume: 22 Pages: 1347-1351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Controllable crystallization in phase-change memory for low-power multilevel storage2012
- Author(s)
  Y. Yin, S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: (印刷中)
- NAID
  40019317143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Large-Area, Scalable Fabrication of Conical TiN/GST/TiN Nanoarray for Low-Power Phase Change Memory2012
- Author(s)
  J.Yoon, H.Jeong, S.Hong, Y.Yin, H.Moon, S.Jeong, J.Han, Y.Kim, Y.Kim, Heon Lee, S Kim, J.Lee
- Journal Title
  
  Journal of Materials Chemistry
  
  Volume: 22 Issue: 4 Pages: 1347-1351
- DOI
  10.1039/c1jm14190b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Controlled promotion of crystallization for application to multilevel phase-change memory2012
- Author(s)
  Y. Yin, and S. Hosaka
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 100 Issue: 25 Pages: 2535031-4
- DOI
  10.1063/1.4730439
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Controllable crystallization in phase-change memory for low-power multilevel storage2012
- Author(s)
  Y. Yin, and S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 6R Pages: 0641011-4
- DOI
  10.1143/jjap.51.064101
- NAID
  40019317143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Low-reset current ring confined-chalcogenide phase-change memory2012
- Author(s)
  Y. Yin and S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 10R Pages: 1042021-5
- DOI
  10.1143/jjap.51.104202
- NAID
  40019455840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Influence of phase-change materials and additional layer on performance of lateral phase-change memories2012
- Author(s)
  Y. Yin, SHosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 497 Pages: 106-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Crystal growth suppression by N-doping into chalcogenide for application to next-generation phase-change memory2012
- Author(s)
  Y. Yin, S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 497 Pages: 101-105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Random-access multilevel storage in phase-change memory by staircase-like pulse programming2012
- Author(s)
  R. Kobayashi, T. Noguchi, Y. Yin, S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 497 Pages: 111-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Controllable crystallization in phase-change memory for low-power multilevel storage2012
- Author(s)
  Y.Yin, S.Hosaka
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: (印刷中)
- NAID
  40019317143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Material engineering for low power consumption and multi-level storage in lateral phase-change memory2012
- Author(s)
  Y. Yin, R. I. Alip, Y. Zhang, and S. Hosaka
- Journal Title
  
  Advanced Materials Research
  
  Volume: 490-495 Pages: 3286-3290
- DOI
  10.4028/www.scientific.net/amr.490-495.3286
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360003, KAKENHI-PROJECT-24686042
[Journal Article] Proposed phase-change memory with a step-like channel for high-performance multi-state storage2011
- Author(s)
  Y. Yin, S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 459 Pages: 145-150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Possibility of freely achievable multilevel storage of phase-change memory by staircase-shaped pulse programming2011
- Author(s)
  Y. Yin, T. Noguchi, S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50 Pages: 1-3
- NAID
  40019043762
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Large resistance ratio for high reliability of multi-Level storage in phase-change memory2011
- Author(s)
  Y. Yin, T. Noguchi, H. Ohno, S. Hosaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: 459 Pages: 140-144
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Multilevel storage in lateral phase-change memory by promotion of nanocrystallization2011
- Author(s)
  Y. Yin, S. Hosaka
- Journal Title
  
  Microelectron, Eng
  
  Volume: 88 Pages: 2794-2796
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Possibility of forming 18-nm-pitch ultrahigh density fine dot arrays for 2 Tbit/in.2 patterned media using 30-keV electron beam lithography2010
- Author(s)
  S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 49 Pages: 1-3
- NAID
  40017085096
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Multi-level-storage in N-doped Sb2Te3 based lateral phase-change memory with an additional top TiN layer2009
- Author(s)
  Y.Yin, K.Ota, T.Noguchi, H.Ohno, H.Sone, S.Hosaka
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  210000066574
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Multi-level-storage in N-doped Sb2Te3 based lateral phase-change memory with an additional top TiN layer2009
- Author(s)
  Y. Yin, K. Ota, T. Noguchi, H. Ohno, H. Sone, S. Hosaka
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 48 Pages: 1-4
- NAID
  210000066574
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Programming margin enlargement by material engineering for multi-level storage in phase-change memory2009
- Author(s)
  Y. Yin, T. Noguchi, H. Ohno, S. Hosaka
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 95 Pages: 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Programming margin enlargement by material engineering for multi-level storage in phase-change memory2009
- Author(s)
  Y.Yin, T.Noguchi, H.Ohno, S.Hosaka
- Journal Title
  
  Appl.Phys.Lett. 95
  
  Pages: 1335031-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Journal Article] Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory2009
- Author(s)
  Y. Yin, T. Noguchi, K. Ota, N. Higano, H. Sone, S. Hosaka
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 152 Pages: 1-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device2024
- Author(s)
  Y. Yin, and K. Niiyama
- Organizer
  2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] N-O Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device2024
- Author(s)
  Y. Yin, and K. Niiyama
- Organizer
  2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] High-Performance Chalcogenide-based Phase-Change Memory Technology2024
- Author(s)
  Y. Yin
- Organizer
  2024 IEEE the 13th International Conference on Communications, Circuits, and Systems (ICCCAS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Doped Chalcogenides for High-Performance Phase Change Devices2023
- Author(s)
  Y. Yin, M. Miuchi, S. Yahagi, and T. Fujiwara
- Organizer
  2023 IEEE 15th International Conference on ASIC (ASICON 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] First-Principles Study of O-Doped GeTe/Sb2Te3 Superlattice2023
- Author(s)
  M. Miuchi, R. Shirakawa, E. Sawai, S. Yahagi, and Y. Yin
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Doped Chalcogenides for High-Performance Phase Change Devices2023
- Author(s)
  Y. Yin, M. Miuchi, S. Yahagi, and T. Fujiwara
- Organizer
  2023 IEEE 15th International Conference on ASIC (ASICON 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Doping O into Conventional GeTe/Sb2Te3 Superlattice for Functional Material of Artificial Synapse2023
- Author(s)
  M. Miuchi, E. Sawai, S Yahagi, and Y. Yin
- Organizer
  The 7th International Conference on Technology and Social Science 2023 (ICTSS2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] O-Doped GeTe Chalcogenide for High-Performance Phase-Change Device2023
- Author(s)
  S. Yahagi, M. Miuchi, S. Yoshimoto, T. Miyata, T. Fujiwara, and Y. Yin
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] O-Doped GeTe Chalcogenide for High-Performance Phase-Change Device2023
- Author(s)
  S. Yahagi, M. Miuchi, S. Yoshimoto, T. Miyata, T. Fujiwara, and Y. Yin
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability2022
- Author(s)
  Y. Yin, T. Fujiwara, K. Niiyama and S. Yahagi
- Organizer
  11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] N-Doped GeTe for Highly Reliable Phase-Change Device2022
- Author(s)
  S. Yahagi and Y. Yin
- Organizer
  11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Recent Progress in Phase Change Materials and Devices2022
- Author(s)
  Y. Yin, K. Niiyama, T. Fujiwara, R. Shirakawa, S. Yahagi and M. Miuchi
- Organizer
  2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] N-Doped GeTe for Highly Reliable Phase-Change Device2022
- Author(s)
  S. Yahagi and Y. Yin
- Organizer
  11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] N-Ti Codoped Zn5Sb3Te1 Chalcogenide for Artificial Synaptic Functional Material2022
- Author(s)
  T. Fujiwara, K. Niiyama and Y. Yin
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Recent Progress in Phase Change Materials and Devices2022
- Author(s)
  Y. Yin, K. Niiyama, T. Fujiwara, R. Shirakawa, S. Yahagi and M. Miuchi
- Organizer
  2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] Undoped and Doped Zn5Sb3Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability2022
- Author(s)
  Y. Yin, T. Fujiwara, K. Niiyama and S. Yahagi
- Organizer
  11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] N-Ti Codoped Zn5Sb3Te1 Chalcogenide for Artificial Synaptic Functional Material2022
- Author(s)
  T. Fujiwara, K. Niiyama and Y. Yin
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18788
[Presentation] Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current2021
- Author(s)
  R. Shirakawa and Y. Yin
- Organizer
  International Conference on Technology and Social Science 2021 (ICTSS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] N-O Co-Doped Sb2Te3 Chalcogenide for High Performance Artificial Synaptic Device2021
- Author(s)
  Y. Yin, K. Niiyama and T. Fujiwara
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Doped Sb2Te3 Phase-Change Materials for High Performance Artificial Synaptic Device2021
- Author(s)
  Y. Yin, K. Niiyama, W. Matsuhashi and T. Fujiwara
- Organizer
  International Conference on Technology and Social Science 2021 (ICTSS2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] N-O co-doped Sb2Te3 chalcogenide memristive material2021
- Author(s)
  K. Niiyama and Y. Yin
- Organizer
  The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] C-N-codoped Sb2Te3 chalcogenides for high-performance phase-change devices2021
- Author(s)
  Y. Yin
- Organizer
  The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Pulse programming method for phase-change artificial synapse2021
- Author(s)
  Y. Yin
- Organizer
  The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Structural analysis for lowering writing current of phase-change device with nanostructure by finite element method2021
- Author(s)
  R. Shirakawa and Y. Yin
- Organizer
  The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Chalcogenides for Their Application to Phase-Change-Memory-Based Synaptic Devices2021
- Author(s)
  Y. Yin, K. Niiyama, W. Matsuhashi, R. Shirakawa, T. Fujiwara, and K. Sawao
- Organizer
  2021 IEEE 14th International Conference on ASIC (ASICON 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01382
[Presentation] Resistance Control for Multilevel Storage in Phase-Change Memory by Pulse Engineering2016
- Author(s)
  Y. Yin and S. Hosaka
- Organizer
  The 7th IEEE international Nanoelectronics Conference 2016 (INEC 2016)
- Place of Presentation
  Chengdu, China
- Year and Date
  2016-05-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Multilevel Storage in Lateral Phase-Change Memory2016
- Author(s)
  Y. Yin
- Organizer
  2016 International Workshop on Information Storage / 10th International Symposium on Optical Storage (IWIS/ISOS 2016)
- Place of Presentation
  Changzhou, China
- Year and Date
  2016-04-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Advanced Nanofabrication and its Application to Nano Phase-Change Memory for Reducing Writing Current2016
- Author(s)
  Y. Yin, D. Nishijo, K. Sawao, K. Ohyama, T. Akahane, T. Komori, M. Huda, H. Zhang, and S. Hosaka
- Organizer
  2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016)
- Place of Presentation
  Hangzhou, China
- Year and Date
  2016-10-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Fast switching and resistance control in chalcogenide-based memory device2016
- Author(s)
  Y. Yin and S. Hosaka
- Organizer
  The Collaborative Conference on Crystal Growth (3CG 2016)
- Place of Presentation
  San Sebastian, Spain
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Multilevel Storage in Lateral Phase-Change Memory2016
- Author(s)
  Y. Yin
- Organizer
  2016 International Workshop on Information Storage / 10th International Symposium on Optical Storage (IWIS/ISOS 2016)
- Place of Presentation
  Changzhou, Jiangsu
- Year and Date
  2016-04-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Nano Phase-Change Memory Array2016
- Author(s)
  Y. Yin
- Organizer
  3rd International Symposium of Gunma University Medical Innovation (GUMI) and 8th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  kiryu, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Crystal growth control in chalcogenide and its application to multilevel storage in phase-change memory2015
- Author(s)
  Y. Yin
- Organizer
  The Collaborative Conference on Crystal Growth (3CG 2015)
- Place of Presentation
  Hongkong
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge1Sb4Te7-Based Phase-Change Memories2015
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  The 11th International Conference on ASIC (ASICON 2015)
- Place of Presentation
  Chengdu, China
- Year and Date
  2015-11-03
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current2015
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015)
- Place of Presentation
  Beijing, China
- Year and Date
  2015-09-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array2015
- Author(s)
  Y. Yin, S. Hosaka
- Organizer
  8th International Conference on Materials for Advanced Technologies (ICMAT2015)
- Place of Presentation
  Suntec, Singapore
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Oxygen-Doped Sb2Te3 for Low-Power-Consumption Phase-Change Memory2015
- Author(s)
  Y. Yin, S. Morioka, R. Satoh, S. Kozaki, S. Hosaka
- Organizer
  8th International Conference on Materials for Advanced Technologies (ICMAT2015)
- Place of Presentation
  Suntec, Singapore
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory2015
- Author(s)
  Y. Yin, Y. Zhang, Y. Takehana, R. Kobayashi, H. Zhang and S. Hosaka
- Organizer
  28th International Microprocesses and Nanotechnology Conference (MNC 2015)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory2014
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Kiryu, Japan
- Year and Date
  2014-12-05
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] N-doped GeTe for High-Performance Phase-Change Memory2014
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014)
- Place of Presentation
  Adelaide, Australia
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures2014
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014)
- Place of Presentation
  Adelaide, Australia
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory2014
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Kiryu, Japan
- Year and Date
  2014-12-05
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory2014
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Kiryu, Japan
- Year and Date
  2014-12-05
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Low Volume-Change High- Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe2013
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  2013 MRS Spring Meeting, San Francisco, California
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2013-04-02
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory2013
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  5th International Conference on Mechanical and Electrical Technology (ICMET 2013)
- Place of Presentation
  Chengdu, China
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Nano-contact phase-change memory2013
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  5th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Kiryu, Gunma, Japan
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory2013
- Author(s)
  Y. Yin, Y. Zhang, and S. Hosaka
- Organizer
  2013 MRS Spring Meeting, San Francisco, California
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2013-04-02
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Staircase pulse programming for recrystallization control in phase-change memory2013
- Author(s)
  Y. Yin, R. Kobayashi, Y. Zhang, R. I. Alip, and S. Hosaka
- Organizer
  the 39th International Micro & Nano Engineering Conference (MNE 2013)
- Place of Presentation
  London, UK
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Electron Beam Lithography for Fabrication of Nano Phase-Change Memory2013
- Author(s)
  Y. Yin, T. Itagawa, and S. Hosaka
- Organizer
  2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013)
- Place of Presentation
  Singapore
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Multilevel Storage in Lateral Phase-Change Memory2012
- Author(s)
  Y.Yin, S.Hosaka
- Organizer
  2012 International Conference on Mechatronics and Intelligent Materials
- Place of Presentation
  Gunma, Japan
- Year and Date
  2012-05-18
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Low stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory2012
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  the 38th International Micro & Nano Engineering Conference (MNE 2012)
- Place of Presentation
  Toulouse, France
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Current-driven crystallization promotion for multilevel storage ill phase-change memory2012
- Author(s)
  Y. Yin, R. I. Alip, and S. Hosaka
- Organizer
  The 24th Symposium on Phase Change Oriented Science (PCOS 2012)
- Place of Presentation
  Shizuoka, Japan
- Year and Date
  2012-11-29
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure2012
- Author(s)
  R. Alip, Z. Mohamad, Y. Yin, and S. Hosaka
- Organizer
  4th International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Gunma, Japan
- Year and Date
  2012-12-07
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Controlled promotion of crystallization for multilevel phase-change memory2012
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  the 38th International Micro & Nano Engineering Conference (MNE 2012)
- Place of Presentation
  Toulouse, France
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Multi-Level Storage Phase-Change Memory2012
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  2012 International Conference on Mechatronics and Intelligent Materials
- Place of Presentation
  Guilin, China
- Year and Date
  2012-05-18
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Fast Operation and Resistance Control in GeTe Based Lateral Phase Change Memory2012
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  4th International Conference on Advanced Micro-Device Engineering (XMDE)
- Place of Presentation
  Gunma, Japan
- Year and Date
  2012-12-07
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Random access multi-levels phase changing using pulse modulation2011
- Author(s)
  S.Hosaka, T.Noguchi, S.Kobayashi, R.I.B. Alip, Y.Yin
- Organizer
  the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011)
- Place of Presentation
  Atami, Japan
- Year and Date
  2011-11-18
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage2011
- Author(s)
  R.I.Alip, R.Kobayashi, Y.Zhang, Y.Yin, S.Hosaka
- Organizer
  3nd International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Gunma, Japan
- Year and Date
  2011-12-08
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Electron Beam Lithography for 10-nm-Wide Nanowire Phase-change Memory2011
- Author(s)
  Y.Yin, T.Itagawa, S.Hosaka
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  Francisco, USA
- Year and Date
  2011-04-26
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording2011
- Author(s)
  Y. Yin, M. Huda, T. Akahane, S. Hosaka
- Organizer
  the International Conference on Nanoscience and Technology
- Place of Presentation
  Beijing, China
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory2011
- Author(s)
  Y. Yin, S. Hosaka
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2011-04-27
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-Level Storage in Lateral Phase-Change Memory : from 3 to 16 Resistance Levels2011
- Author(s)
  Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, S. Hosaka
- Organizer
  3nd International Conference on Advanced Micro-Device Engineering (AMDE)
- Place of Presentation
  Gunma, Japan
- Year and Date
  2011-12-08
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory2011
- Author(s)
  Y.Yin, S.Hosaka
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  Francisco, USA
- Year and Date
  2011-04-27
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory2011
- Author(s)
  Y. Yin, T. Itagawa, S. Hosaka
- Organizer
  2011 MRS Spring Meeting
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2011-04-26
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] 10-nm-Order-Wide Nanowire Phase-Change Memory2011
- Author(s)
  Y. Yin, T. Itagawa, S. Hosaka
- Organizer
  the International Conference on Nanoscience and Technology
- Place of Presentation
  Beijing, China.
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] 10-nm-Order-Wide Nanowire Phase-Change Memory2011
- Author(s)
  Y.Yin, T.Itagawa, S.Hosaka
- Organizer
  the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011)
- Place of Presentation
  Beijing, China
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-level storage in phase-change memory : from multi-layer to single layer2010
- Author(s)
  Y.Yin, S.Hosaka
- Organizer
  The 22nd Symposium on Phase Change Optical Information Storage(PCOS2010)
- Place of Presentation
  Atami, Japan
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-levels phase change memory using pulse modulation2010
- Author(s)
  S. Hosaka, T. Noguchi, Y. Yin
- Organizer
  Int. symposium EPCOS
- Place of Presentation
  Milano, Italy.
- Year and Date
  2010-09-07
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-levels phase change memory using pulse modulation2010
- Author(s)
  S.Hosaka, T.Noguchi, Y.Yin
- Organizer
  EPCOS 2010
- Place of Presentation
  Milano, Italy
- Year and Date
  2010-09-07
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-Level Storage in Lateral Phase-Change Memory2009
- Author(s)
  Y.Yin, T.Noguchi, H.Ohno, K.Ota, S.Hosaka
- Organizer
  ChinaNANO 2009
- Place of Presentation
  北京国際会議中心(中国北京)
- Year and Date
  2009-09-04
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Material engineering in phase-change memory for low power consumption and multi-level storage2009
- Author(s)
  Y. Yin, T. Noguchi, H. Ohno, S. Hosaka
- Organizer
  the 5th International Conference on Electron Devices and Solid State Circuits
- Place of Presentation
  Xian, China
- Year and Date
  2009-11-26
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Material engineering in phase-change memory for low power consumption and multi-level storage2009
- Author(s)
  Y.Yin, T.Noguchi, H.Ohno, S.Hosaka
- Organizer
  the 5th Interna-tional Conference on Electron Devices and Solid State Circuits
- Place of Presentation
  Xian Ana Grand Castle Hotel(中国西安市)
- Year and Date
  2009-11-26
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Multi-Level Storage in Lateral Phase-Change Memory2009
- Author(s)
  Y. Yin, T. Noguchi, H. Ohno, K. Ota, S. Hosaka
- Organizer
  the International Conference on Nanoscience and Technology
- Place of Presentation
  Beijing, China.
- Year and Date
  2009-09-04
- Data Source
  KAKENHI-PROJECT-21710135
[Presentation] Ultra-Multilevel-Storage Phase-Change Memory
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  2014 International Conference on Materials Science and Engineering Technology (MSET 2014)
- Place of Presentation
  Shanghai, China
- Year and Date
  2014-07-28 – 2014-07-29
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory
- Author(s)
  Y. Yin, S. Iwashita, and S. Hosaka
- Organizer
  The International Conference on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2014-09-08 – 2014-09-10
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  27th International Microprocesses and Nanotechnology Conference (MNC 2014)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory
- Author(s)
  Y. Yin, S. Iwashita, and S. Hosaka
- Organizer
  27th International Microprocesses and Nanotechnology Conference (MNC 2014)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN)
- Place of Presentation
  Jakarta, Indonesia
- Year and Date
  2014-08-15 – 2014-08-16
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory
- Author(s)
  Y. Yin, S. Iwashita, and S. Hosaka
- Organizer
  the 40th International Micro & Nano Engineering Conference (MNE 2014)
- Place of Presentation
  Lausanne, Switzerland
- Year and Date
  2014-09-23 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-24686042
[Presentation] Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory
- Author(s)
  Y. Yin, and S. Hosaka
- Organizer
  2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014)
- Place of Presentation
  Guilin, China
- Year and Date
  2014-10-28 – 2014-10-31
- Data Source
  KAKENHI-PROJECT-24686042

1. Kazuteru NAMBA (60359594)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. HOSAKA Sumio

# of Collaborated Projects: 1 results

# of Collaborated Products: 51 results
3. ZHANG Yulong

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
4. IWASHITA Shota

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results

Yin You イン ユウ

YIN You イン ユウ

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原子移動制御を用いた超高性能な革新的脳型情報処理素子の創製とその応用展開Principal Investigator

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Optical rectenna with high photoelectric conversion efficiency using innovative I-V asymmetry-enhanced MIM diodePrincipal Investigator

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Artificial neuron with all functions using only one functional materialPrincipal Investigator

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Ultrafast Superlattice Phase-change Artificial SynapsePrincipal Investigator

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Write latency reduction on PCM for approximate computing

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Fast and reliable multilevel phase-change memory for practical applicationPrincipal Investigator

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Research on nano wire phase-change memoryPrincipal Investigator

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[Journal Article] Characterization of undoped and N-Ti codoped Zn5Sb3Te chalcogenides2023

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[Journal Article] N-Doped GeTe for Phase-Change Device with High Reliability2023

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[Journal Article] N-Doped GeTe for Phase-Change Device with High Reliability2023

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[Journal Article] Braille recognition by E-skin system based on binary memristive neural network2023

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[Journal Article] Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse2021

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[Journal Article] Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film2016

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[Journal Article] Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory2016

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Yin You インユウ

YIN You インユウ