LEE Hyunjae 李賢宰

Researcher Number	10584063
Affiliation (based on the past Project Information) *help	2011: 東北大学, 学際科学国際高等研究センター, 寄附研究部門研究員 2010: 東北大学, 学際科学国際高等研究センター, 寄附研究部門教員
Review Section/Research Field	Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Except Principal Investigator ケミカル・リフト・オフ / 窒化物半導体 / LED / 窒化 / InGaN / GaN / AlGaN / ケミカルリフトオフ / 発光ダイオード(LED) / 紫外LED / CrN

Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs
- Principal Investigator
  
  YAO Takafumi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University

All 2011 2010 2009

All Journal Article Presentation

[Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011
- Author(s)
  Cho, Y; Choi, S; Kil, GS; Lee, HJ; Yao, T; Yoo, J; Kwon, J; Chang, J
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: 325 Pages: 85-88
- DOI
  10.1016/j.jcrysgro.2011.04.034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0. 67)2011
- Author(s)
  Jeong, M ; Lee, HS ; Han, SK ; Shin, EJ ; Hong, SK ; Lee, JY ; Song, JH ; Yao, T
- Journal Title
  
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  
  Volume: 208 Pages: 2737-2740
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011
- Author(s)
  Cho, Y ; Choi, S ; Kil, GS ; Lee, HJ ; Yao, T ; Yoo, J ; Kwon, J ; Chang, J
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: 325 Pages: 85-89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Misoriented grains with a preferential orientation in a-plane oriented GaN layers2011
- Author(s)
  Tokumoto, Y ; Lee, HJ ; Ohno, Y ; Yao, T ; Yonenaga, I
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: 334 Pages: 80-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)2011
- Author(s)
  Jeong, M; Lee, HS; Han, SK; Shin, EJ; Hong, SK; Lee, JY; Song, JH; Yao, T
- Journal Title
  
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  
  Volume: 208 Pages: 2737-2740
- DOI
  10.1002/pssa.201127307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
- Author(s)
  Lee, SW ; Ha, JS ; Lee, HJ ; Lee, HJ ; Goto, H ; Hanada, T ; Goto, T ; Fujii, K ; Cho, MW ; Yao, T
- Journal Title
  
  JOURNAL OF PHYSICS D-APPLIED PHYSICS
  
  Volume: 43 Pages: 175101-175101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010
- Author(s)
  Jung, M ; Chang, J ; Lee, H ; Ha, JS ; Park, JS ; Park, S ; Fujii, K ; Yao, T ; Kil, GS ; Lee, S ; Cho, M ; Whang, S
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  
  Volume: 28 Pages: 623-626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Use of Polytypes to Control Crystallographic Orientation of GaN2010
- Author(s)
  Lee, HJ ; Yao, T ; Kim, C ; Chang, J
- Journal Title
  
  CRYSTAL GROWTH & DESIGN
  
  Volume: 10 Pages: 5307-5311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
- Author(s)
  Lee, SW; Ha, JS; Lee, HJ; Lee, HJ; Goto, H; Hanada, T; Goto, T; Fujii, K; Cho, MW; Yao, T
- Journal Title
  
  JOURNAL OF PHYSICS D-APPHED PHYSICS
  
  Volume: 43 Pages: 175101-175101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009
- Author(s)
  Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 470-473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
- Author(s)
  Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
- Journal Title
  
  Applied Surface Science
  
  Volume: 255 Pages: 8582-8586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
- Author(s)
  Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
- Journal Title
  
  Applied Surface Science 255
  
  Pages: 8582-8586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009
- Author(s)
  Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 311 Pages: 470-473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009
- Author(s)
  Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 242108-242108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K. Cho MW. Yao T
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 82105-82105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009
- Author(s)
  Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters
  
  Volume: 94 Pages: 82105-82105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009
- Author(s)
  Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
- Journal Title
  
  Applied Physics Letters
  
  Volume: 94 Pages: 2420108-2420108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Growth of free-standing GaN substrates (Invited)2010
- Author(s)
  HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K. Fujii, and T. Yao
- Organizer
  SPIE Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21360001
[Presentation] Growth of free-standing GaN substrates(Invited)2010
- Author(s)
  HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K Fujii, T Yao
- Organizer
  SPIE Photonics West
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PROJECT-21360001

1. YAO Takafumi (60230182)

# of Collaborated Projects: 1 results

# of Collaborated Products: 19 results
2. GOTO Takenari (10004342)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
3. FUJII Katsushi (80444016)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
4. 小池佳代 (80532423)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

LEE Hyunjae 李 賢宰

Research Projects

Research Products

Co-Researchers

Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0. 67)2011

Author(s)

Journal Title

Data Source

[Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

Author(s)

Journal Title

Data Source

[Journal Article] Misoriented grains with a preferential orientation in a-plane oriented GaN layers2011

Author(s)

Journal Title

Data Source

[Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

Author(s)

Journal Title

Data Source

[Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010

Author(s)

Journal Title

Data Source

[Journal Article] Use of Polytypes to Control Crystallographic Orientation of GaN2010

Author(s)

Journal Title

Data Source

[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

Author(s)

Journal Title

Data Source

[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

Author(s)

Journal Title

Data Source

[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

Author(s)

Journal Title

Data Source

[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

Author(s)

Journal Title

Data Source

[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

Author(s)

Journal Title

Data Source

[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

Author(s)

Journal Title

Data Source

[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

Author(s)

Journal Title

Data Source

[Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

Author(s)

Journal Title

Data Source

[Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

Author(s)

Journal Title

Data Source

LEE Hyunjae 李賢宰