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LEE Hyunjae  李 賢宰

ORCIDConnect your ORCID iD *help
Researcher Number 10584063
Affiliation (based on the past Project Information) *help 2011: 東北大学, 学際科学国際高等研究センター, 寄附研究部門研究員
2010: 東北大学, 学際科学国際高等研究センター, 寄附研究部門教員
Review Section/Research Field
Except Principal Investigator
Applied materials science/Crystal engineering
Keywords
Except Principal Investigator
窒化 / ケミカルリフトオフ / CrN / InGaN / AlGaN / GaN / 発光ダイオード(LED) / ケミカル・リフト・オフ / 紫外LED / LED / 窒化物半導体
  • Research Projects

    (1 results)
  • Research Products

    (19 results)
  • Co-Researchers

    (4 People)
  •  Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University

All 2011 2010 2009

All Journal Article Presentation

  • [Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0. 67)2011

    • Author(s)
      Jeong, M ; Lee, HS ; Han, SK ; Shin, EJ ; Hong, SK ; Lee, JY ; Song, JH ; Yao, T
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 208 Pages: 2737-2740

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

    • Author(s)
      Cho, Y ; Choi, S ; Kil, GS ; Lee, HJ ; Yao, T ; Yoo, J ; Kwon, J ; Chang, J
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 325 Pages: 85-89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Misoriented grains with a preferential orientation in a-plane oriented GaN layers2011

    • Author(s)
      Tokumoto, Y ; Lee, HJ ; Ohno, Y ; Yao, T ; Yonenaga, I
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 334 Pages: 80-83

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

    • Author(s)
      Cho, Y; Choi, S; Kil, GS; Lee, HJ; Yao, T; Yoo, J; Kwon, J; Chang, J
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 325 Issue: 1 Pages: 85-88

    • DOI

      10.1016/j.jcrysgro.2011.04.034

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)2011

    • Author(s)
      Jeong, M; Lee, HS; Han, SK; Shin, EJ; Hong, SK; Lee, JY; Song, JH; Yao, T
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 208 Issue: 12 Pages: 2737-2740

    • DOI

      10.1002/pssa.201127307

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

    • Author(s)
      Lee, SW ; Ha, JS ; Lee, HJ ; Lee, HJ ; Goto, H ; Hanada, T ; Goto, T ; Fujii, K ; Cho, MW ; Yao, T
    • Journal Title

      JOURNAL OF PHYSICS D-APPLIED PHYSICS

      Volume: 43 Pages: 175101-175101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010

    • Author(s)
      Jung, M ; Chang, J ; Lee, H ; Ha, JS ; Park, JS ; Park, S ; Fujii, K ; Yao, T ; Kil, GS ; Lee, S ; Cho, M ; Whang, S
    • Journal Title

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

      Volume: 28 Pages: 623-626

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

    • Author(s)
      Lee, SW; Ha, JS; Lee, HJ; Lee, HJ; Goto, H; Hanada, T; Goto, T; Fujii, K; Cho, MW; Yao, T
    • Journal Title

      JOURNAL OF PHYSICS D-APPHED PHYSICS

      Volume: 43 Pages: 175101-175101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Use of Polytypes to Control Crystallographic Orientation of GaN2010

    • Author(s)
      Lee, HJ ; Yao, T ; Kim, C ; Chang, J
    • Journal Title

      CRYSTAL GROWTH & DESIGN

      Volume: 10 Pages: 5307-5311

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

    • Author(s)
      Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
    • Journal Title

      Applied Surface Science

      Volume: 255 Pages: 8582-8586

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

    • Author(s)
      Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K. Cho MW. Yao T
    • Journal Title

      Applied Physics Letters 94

      Pages: 82105-82105

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

    • Author(s)
      Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 470-473

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

    • Author(s)
      Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters

      Volume: 94 Pages: 2420108-2420108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

    • Author(s)
      Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 470-473

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

    • Author(s)
      Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters 94

      Pages: 242108-242108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

    • Author(s)
      Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters

      Volume: 94 Pages: 82105-82105

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

    • Author(s)
      Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
    • Journal Title

      Applied Surface Science 255

      Pages: 8582-8586

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Presentation] Growth of free-standing GaN substrates (Invited)2010

    • Author(s)
      HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K. Fujii, and T. Yao
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      The Moscone Center, San Francisco, USA
    • Year and Date
      2010-01-25
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Presentation] Growth of free-standing GaN substrates(Invited)2010

    • Author(s)
      HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K Fujii, T Yao
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      The Moscone Center, San Francisco, USA
    • Year and Date
      2010-01-25
    • Data Source
      KAKENHI-PROJECT-21360001
  • 1.  YAO Takafumi (60230182)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 19 results
  • 2.  GOTO Takenari (10004342)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 3.  FUJII Katsushi (80444016)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 4.  小池 佳代 (80532423)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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