OHSAWA Takashi 大澤隆

Researcher Number	10613391
Other IDs
Affiliation (based on the past Project Information) *help	2020 – 2022: 早稲田大学, 理工学術院(情報生産システム研究科・センター), 教授(任期付)
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 新機能メモリ / ニューロモルフィックシステム / アンデュアランス / 不揮発性メモリデバイス / ニューラルネットワーク / 閾値電圧ばらつき / MOSFET / トレーニング・プログラム / オペアンプ / オフセット電圧 / 不揮発性メモリ / イン・メモリ・コンピューティング / ディープ・ニューラル・ネットワーク

Research Projects
(1 results)
Research Products
(11 results)

Neural Network Engine based on a Blind Learning AlgorithmPrincipal Investigator
- Principal Investigator
  
  OHSAWA Takashi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Waseda University

All 2023 2022 2021 2020

All Journal Article Presentation

[Journal Article] A gate leakage current-powered loadless 4T SRAM with immunity against random dopant fluctuation and surface roughness in silicon-silicon dioxide interface2023
- Author(s)
  Yihan ZHU, Takashi OHSAWA
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1004-SC1004
- DOI
  10.35848/1347-4065/aca33b
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] A Binarized Spiking Neural Network Based on Auto-Reset LIF Neurons and Large Signal Synapses Using STT-MTJs2023
- Author(s)
  Haoyan LIU, Takashi OHSAWA
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: 4 Pages: 044501-044501
- DOI
  10.35848/1347-4065/acc9f4
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] A Fully Analog Deep Neural Network Inference Accelerator with Pipeline Registers Based on Master-Slave Switched Capacitors2023
- Author(s)
  Yaxin MEI, Takashi OHSAWA
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: vol. E106-C, no.9
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] A Loadless 4T SRAM Powered by Gate Leakage Current with a High Tolerance for Fluctuations in Device Parameters2022
- Author(s)
  Yihan ZHU, Takashi OHSAWA
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SC Pages: SC1053-SC1053
- DOI
  10.35848/1347-4065/ac44ce
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] A Low-Cost Training Method of ReRAM Inference Accelerator Chips for Binarized Neural Networks to Recover Accuracy Degradation due to Statistical Variabilities2022
- Author(s)
  Zian CHEN, Takashi OHSAWA
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E105.C Issue: 8 Pages: 375-384
- DOI
  10.1587/transele.2021ECP5040
- NAID
  130008149058
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2022-08-01
- Language
  English
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] Compact Model of Magnetic Tunnel Junctions for SPICE Simulation Based on Switching Probability2021
- Author(s)
  Haoyan LIU, Takashi OHSAWA
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E104.C Issue: 3 Pages: 121-127
- DOI
  10.1587/transele.2020ECP5011
- NAID
  130007993130
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2021-03-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] Co-Design of Binary Processing in Memory ReRAM Array andDNN Model Optimization Algorithm2020
- Author(s)
  Yue GUAN, Takashi OHSAWA
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E103-C NO. 11 Pages: 685-692
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04626
[Journal Article] Array Design of High-Density Emerging Memories Making Clamped Bit-Line Sense Amplifier Compatible with Dummy Cell Average Read Scheme2020
- Author(s)
  Ziyue ZHANG, Takashi OHSAWA
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E103.C Issue: 8 Pages: 372-380
- DOI
  10.1587/transele.2019ECP5039
- NAID
  130007883640
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2020-08-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04626
[Presentation] Spin-Transfer Torque Magnetic Tunnel Junction Model Based on Fokker-Planck Equation for Stochastic Circuit Simulations2022
- Author(s)
  Haoyan Liu, Takashi Ohsawa
- Organizer
  22nd IEEE International Conference on Nanotechnology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Presentation] Spin-Transfer Torque Magnetic Tunnel Junction Model Based on Fokker-Planck Equation for Stochastic Circuit Simulations2022
- Author(s)
  Haoyan LIU, Takashi OHSAWA
- Organizer
  22nd IEEE International Conference on Nanotechnology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626
[Presentation] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO2 Interface2022
- Author(s)
  Yihan ZHU, Takashi OHSAWA
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04626

OHSAWA Takashi 大澤 隆

Research Projects

Research Products

Neural Network Engine based on a Blind Learning AlgorithmPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] A gate leakage current-powered loadless 4T SRAM with immunity against random dopant fluctuation and surface roughness in silicon-silicon dioxide interface2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] A Binarized Spiking Neural Network Based on Auto-Reset LIF Neurons and Large Signal Synapses Using STT-MTJs2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] A Fully Analog Deep Neural Network Inference Accelerator with Pipeline Registers Based on Master-Slave Switched Capacitors2023

Author(s)

Journal Title

Data Source

[Journal Article] A Loadless 4T SRAM Powered by Gate Leakage Current with a High Tolerance for Fluctuations in Device Parameters2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] A Low-Cost Training Method of ReRAM Inference Accelerator Chips for Binarized Neural Networks to Recover Accuracy Degradation due to Statistical Variabilities2022

Author(s)

Journal Title

DOI

NAID

ISSN

Year and Date

Language

Data Source

[Journal Article] Compact Model of Magnetic Tunnel Junctions for SPICE Simulation Based on Switching Probability2021

Author(s)

Journal Title

DOI

NAID

ISSN

Year and Date

Language

Data Source

[Journal Article] Co-Design of Binary Processing in Memory ReRAM Array andDNN Model Optimization Algorithm2020

Author(s)

Journal Title

Data Source

[Journal Article] Array Design of High-Density Emerging Memories Making Clamped Bit-Line Sense Amplifier Compatible with Dummy Cell Average Read Scheme2020

Author(s)

Journal Title

DOI

NAID

ISSN

Year and Date

Language

Data Source

[Presentation] Spin-Transfer Torque Magnetic Tunnel Junction Model Based on Fokker-Planck Equation for Stochastic Circuit Simulations2022

Author(s)

Organizer

Data Source

[Presentation] Spin-Transfer Torque Magnetic Tunnel Junction Model Based on Fokker-Planck Equation for Stochastic Circuit Simulations2022

Author(s)

Organizer

Data Source

[Presentation] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO2 Interface2022

Author(s)

Organizer

Data Source

OHSAWA Takashi 大澤隆