Sato Masaru 佐藤勝

… Alternative Names

佐藤勝サトウマサル

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Researcher Number	10636682
Affiliation (Current)	2025: 北見工業大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2023: 北見工業大学, 工学部, 准教授 2019 – 2021: 北見工業大学, 工学部, 准教授 2015 – 2018: 北見工業大学, 工学部, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator トランジスタ / 配線 / 低消費電力 / LSI / 誘電体物性 / ナノ材料 / 表面・界面物性 / HfNx膜 / ZrNx膜 / TiNx膜 … More / 絶縁バリヤ / 拡散バリヤ / シリコン貫通ビア / 3次元集積回路 … More Except Principal Investigator 3次元集積回路 / LSI / 拡散バリヤ / 配向制御 / 集積回路 / Cu配向性 / 銅配線 / 3次元デバイス / 拡散バリア / エレクトロマイグレーション / 熱的安定性 / 構造解析 / 信頼性 / 下地材料 / Cu配線 / 拡散 / 表面・界面物性 / SiNx膜 / バリア絶縁膜 / シリコン貫通ビア / バリヤレス / 低温作製 / シリコン貫通ビア配線 / 絶縁膜 Less

次世代3次元LSIのための低消費電力を可能とする高機能裏面配線構造の検討Principal Investigator
- Principal Investigator
  
  佐藤勝
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kitami Institute of Technology
Innovative Elucidation in Structural Analysis of Ultrathin Barriers and Control of Copper Interconnect
- Principal Investigator
  
  Takeyama Mayumi B.
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kitami Institute of Technology
Orientation control applicable Cu interconnect on the cutting edge of 3D devices and 3D-LSI
- Principal Investigator
  
  Takeyama Mayumi B.
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kitami Institute of Technology
Development of new barrier material of interfacial-layer-free for ultrafine TSVPrincipal Investigator
- Principal Investigator
  
  Sato Masaru
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kitami Institute of Technology
Low temperature deposition of barrierless insulating film applicable to 3D and 2.5 D-IC
- Principal Investigator
  
  Takeyama Mayumi B.
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kitami Institute of Technology

All 2021 2020 2019 2018 2017 2016 2015

All Journal Article Presentation

[Journal Article] Structural analysis of TaWN ternary alloy film applicable to Cu orientation control2021
- Author(s)
  M. B. Takeyama, M. Yasuda, and M. Sato
- Journal Title
  
  J. J. A. P.
  
  Volume: 60 Issue: SB Pages: SBBC04-SBBC04
- DOI
  10.35848/1347-4065/abebbd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04223
[Journal Article] XRD and EBSD analysis of Cu film on randomly oriented ZrN x film as the underlying materials2020
- Author(s)
  Sato Masaru、Yasuda Mitsunobu、Takeyama Mayumi B.
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SL Pages: SLLD01-SLLD01
- DOI
  10.35848/1347-4065/ab7f57
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06337
[Journal Article] Relationship between TiN films with different orientations and their barrier properties2018
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149379
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06337
[Journal Article] Relationship between TiN films with different orientations and their barrier properties2018
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Journal Title
  
  J. Jpn. Appl. Phys
  
  Volume: 57
- NAID
  210000149379
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05975
[Journal Article] Growth of (111)-oriented Cu layer on thin TaWN films2017
- Author(s)
  Mayumi B. Takeyama and Masaru Sato
- Journal Title
  
  J. Jpn. Appl. Phys
  
  Volume: 56 Issue: 7S2 Pages: 07KC03-07KC03
- DOI
  10.7567/jjap.56.07kc03
- NAID
  210000148102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K05975
[Journal Article] Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI2016
- Author(s)
  M. Sato, M. B. Takeyama, A. Noya
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 2S Pages: 02BC21-02BC21
- DOI
  10.7567/jjap.55.02bc21
- NAID
  210000146090
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K05975
[Journal Article] Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics2016
- Author(s)
  Masaru Sato, Mayumi B. Takeyama, Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura, and Atsushi Noya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146285
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K05975
[Journal Article] Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics2016
- Author(s)
  M. Sato, M. B. Takeyama, Y. Nakata, Y. Kobayashi, T. Nakamura, A. Noya
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55
- NAID
  210000146285
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Barrier Properties of thin TaWN films in Cu(111)/TaWN/Si systems2020
- Author(s)
  M. B. Takeyama, M. Sato, and M. Yasuda
- Organizer
  The 2020 International Conference on Solid StateDevices and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04223
[Presentation] ZrN 膜上に成膜したCu(111)優先配向2020
- Author(s)
  佐藤　勝、安田　光伸、武山　真弓
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] Cu(111)高配向制御が可能な極薄TaWNバリヤの構造解析2020
- Author(s)
  武山真弓，佐藤　勝，安田光伸
- Organizer
  応用物理学会秋季大会
- Data Source
  KAKENHI-PROJECT-18K04223
[Presentation] Cu(111)配向制御のための極薄バリヤの構造評価2020
- Author(s)
  武山真弓，佐藤　勝，安田光伸
- Organizer
  電子情報通信学会ソサイエティ大会
- Data Source
  KAKENHI-PROJECT-18K04223
[Presentation] 極薄バリヤ上のCu(111)配向メカニズム2020
- Author(s)
  武山真弓，安田光伸，佐藤勝
- Organizer
  電子情報通信学会　電子部品材料研究会(CPM)
- Data Source
  KAKENHI-PROJECT-18K04223
[Presentation] RFスパッタ法によって室温成膜されたZrNx 膜の特性2019
- Author(s)
  佐藤　勝、武山　真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] RFスパッタ法によるTi 膜の低温作製2019
- Author(s)
  佐藤　勝、武山　真弓
- Organizer
  電子情報通信学会ソサイエティ大会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] 反応性スパッタ法によって得られたZrN 膜上のCu(111)高配向化2019
- Author(s)
  佐藤　勝、武山　真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature2019
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] Cu(111) preferential orientation on ZrNx films2019
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Organizer
  Advanced Metallization Conference 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] 低温作製されたTiNx膜の特性2018
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] 反応性スパッタ法によるTiNx膜の低温作2017
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 低温作製されたTiNx 膜の特性2017
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Characterization of TiHfN ternary alloy films as a new barrier2017
- Author(s)
  Mayumi B. Takeyama and Masaru Sato
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 組成の違いによるTiHfN合金膜のキャラクタリゼーション2017
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電気学会会　電子・情報・システム部門大会
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Relation between TiN films with different texture and its barrier properties2017
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Organizer
  Advanced Metallization Conference 2017: 27th Asian Session
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 反応性スパッタ法によるTiNx膜の低温作製2017
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] 組成の違いによるTiHfN合金膜のキャラクタリゼーション2017
- Author(s)
  佐藤勝、武山真弓
- Organizer
  電気学会電子・情報・システム部門大会
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] Relation between TiN films with different texture and its barrier properties2017
- Author(s)
  Masaru Sato and Mayumi B. Takeyama
- Organizer
  Advanced Metallization Conference 2017: 27th Asian Session
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] Characterization of TiHfN ternary alloy films as a new barrier2017
- Author(s)
  Mayumi B. Takeyama and Masaru Sato
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06337
[Presentation] 低温SiNx膜における表面ラジカル処理の効果2016
- Author(s)
  武山真弓、佐藤勝
- Organizer
  Cat-CVD研究会
- Place of Presentation
  北見工業大学（北海道北見市）
- Year and Date
  2016-07-08
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Barrierproperties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system2016
- Author(s)
  M. Sato, E. Aoyagi, and M. B. Takeyama
- Organizer
  Advanced Metallization Conference 2016: 26th Asian Session
- Place of Presentation
  東京大学（東京都）
- Year and Date
  2016-10-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 薄いHfNx膜上のCu(111)面高配向成長2016
- Author(s)
  佐藤勝、青柳英二、武山真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  愛媛大学（愛媛県松山市）
- Year and Date
  2016-07-22
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] The effect of the HfNx barrier thickness on the Cu grain orientation control2016
- Author(s)
  M. Sato, E. Aoyagi, and M. B. Takeyam
- Organizer
  2016 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center(茨城県つくば市）
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 低温作製されたSiNx膜の安定性2016
- Author(s)
  武山真弓、佐藤勝
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  愛媛大学（愛媛県松山市）
- Year and Date
  2016-07-22
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ナノ結晶HfNx膜上のCu膜の組織観察2016
- Author(s)
  佐藤　勝、武山真弓、青柳英二、野矢　厚
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  福岡県福岡市
- Year and Date
  2016-03-15
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Cuプラグに適用可能なTiHfN合金膜のバリヤ特性2016
- Author(s)
  佐藤勝、青柳英二、野矢厚、武山真弓
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  金沢工業大学（石川県野々市市）
- Year and Date
  2016-11-18
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 低温作製された窒化物薄膜の特性2016
- Author(s)
  武山真弓、佐藤　勝、小林靖志、中田義弘、中村友二、野矢　厚
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  東京都
- Year and Date
  2016-01-22
- Invited
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカル処理によって得られた薄いHfNx膜のバリヤ特性2016
- Author(s)
  佐藤勝、武山真弓
- Organizer
  Cat-CVD研究会
- Place of Presentation
  北見工業大学（北海道北見市）
- Year and Date
  2016-07-08
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカル処理を用いた低温TiNx膜の特性評価2016
- Author(s)
  佐藤　勝、武山真弓、野矢　厚
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  東京都
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 絶縁バリアとしてのSiNx膜の低温作製2015
- Author(s)
  武山真弓、佐藤　勝、小林靖志、中田義弘、中村友二、野矢　厚
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  青森県弘前市
- Year and Date
  2015-08-10
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカル処理によるHfNx膜の室温作製2015
- Author(s)
  佐藤　勝、武山真弓、野矢　厚
- Organizer
  電気・情報関係学会北海道支部連合大会
- Place of Presentation
  北海道北見市
- Year and Date
  2015-11-07
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカルを用いた表面窒化反応によるHfNx膜の低温作製2015
- Author(s)
  佐藤　勝、武山真弓、野矢　厚
- Organizer
  Cat-CVD研究会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-07-03
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカル反応を用いたHfNx膜の低温作製2015
- Author(s)
  佐藤　勝、武山真弓、野矢　厚
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  青森県弘前市
- Year and Date
  2015-08-10
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 室温成膜したSiNx膜の特性評価2015
- Author(s)
  佐藤　勝、武山真弓、小林靖志、中田義弘、中村友二、野矢　厚
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  新潟県長岡市
- Year and Date
  2015-11-06
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] ラジカル窒化による遷移金属窒化物の有用性2015
- Author(s)
  武山真弓、佐藤　勝、青柳英二、野矢　厚
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  新潟県長岡市
- Year and Date
  2015-11-06
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 室温堆積によるSiNx膜の特性評価2015
- Author(s)
  武山真弓、佐藤　勝、小林靖志、中田義弘、中村友二、野矢　厚
- Organizer
  Cat-CVD研究会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-07-03
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures2015
- Author(s)
  M. Sato, M. B. Takeyama, Y. Nakata, Y. Kobayashi, t. Nakamura, A. Noya
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  北海道札幌市
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05975
[Presentation] 窒化物薄膜の微細構造制御とラジカルを用いた低温での成膜方法2015
- Author(s)
  武山真弓、佐藤　勝、野矢　厚
- Organizer
  化学工学会
- Place of Presentation
  北海道札幌市
- Year and Date
  2015-09-09
- Invited
- Data Source
  KAKENHI-PROJECT-15K05975

1. Takeyama Mayumi B. (80236512)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
2. 野矢厚 (60133807)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
3. 横川慎二 (40718532)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 武山真弓

# of Collaborated Projects: 0 results

# of Collaborated Products: 46 results

Sato Masaru 佐藤 勝

佐藤 勝 サトウ マサル

Research Projects

Research Products

Co-Researchers

次世代3次元LSIのための低消費電力を可能とする高機能裏面配線構造の検討Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Innovative Elucidation in Structural Analysis of Ultrathin Barriers and Control of Copper Interconnect

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Orientation control applicable Cu interconnect on the cutting edge of 3D devices and 3D-LSI

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of new barrier material of interfacial-layer-free for ultrafine TSVPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Low temperature deposition of barrierless insulating film applicable to 3D and 2.5 D-IC

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Structural analysis of TaWN ternary alloy film applicable to Cu orientation control2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] XRD and EBSD analysis of Cu film on randomly oriented ZrN x film as the underlying materials2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Relationship between TiN films with different orientations and their barrier properties2018

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Relationship between TiN films with different orientations and their barrier properties2018

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Growth of (111)-oriented Cu layer on thin TaWN films2017

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics2016

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics2016

Author(s)

Journal Title

NAID

Data Source

[Presentation] Barrier Properties of thin TaWN films in Cu(111)/TaWN/Si systems2020

Author(s)

Organizer

Sato Masaru 佐藤勝

佐藤勝サトウマサル