INOUE Masataka 井上正崇

… Alternative Names

井上正崇イノウエマサタカ

井上正嵩

Less

Researcher Number	20029325
Other IDs
External Links
Affiliation (Current)	2025: 大阪工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2011 – 2013: 大阪工業大学, 工学部, 教授 2006 – 2008: 大阪工業大学, 工学部, 教授 1998 – 2001: Electrical Engineering, Osaka Institute of Technology, Professor, 工学部, 教授 1996 – 2000: 大阪工業大学, 電気工学科, 教授 1994 – 1996: 大阪工業大学, 工学部, 教授 … More 1989 – 1992: 大阪工業大学, 工学部, 教授 1990: 大阪工業大学, 教授 1990: Osaka Institute of Technology, Faculty of Engineering, Professor, 工学部 1986 – 1987: 大阪工業大学, 工学部, 教授 1985: 大阪工業大学, 工, 助教授 Less
Review Section/Research Field	Principal Investigator Measurement engineering / Applied materials Except Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment
Keywords	Principal Investigator ヘテロ接合 / 量子効果 / InAs / AlGaSb / MBE / ヘテロ構造 / メゾスコピック構造 / ballistic / curvature / negative resistance … More / heterostructure / diode / sub-terahertz / terahertz / 二乗検波 / lnAs / 量子井戸構造 / AlSb / バリスティック / 検出感度 / 負性抵抗 / AIGaSb / ダイオード / サブテラヘルツ / テラヘルツ / High speed Device / Heterostructure / 分子線エピタキシ- / 高速電子輸送 / 高速デバイス / フォノン / 2次元電子 / 1次元電子 / インジウム砒素 / 擬1次元電子輸送 / メゾスコピックデバイス / インジウムヒ素 / 低次元電子輸送 … More Except Principal Investigator InAs / AlGaSb / 量子細線 / spin-splitting / SPIN-FET / クロライド法 / トランジスタ / 有機伝導体 / Rashba effect / spin・splitting / SPIN・FET / spin-slitting / Rashba効果 / type-II heterostructure / single electron devices / AFM oxidation / atomic force microscope / quantum effect devices / バンド間トンネル / 共鳴トンネル / 原子間力顕微鏡 / タイプII / 単一電子デバイス / AFM酸化 / 原子間力顕微鏡(AFM) / 量子効果デバイス / SET modeling / Photon assisted tunneling / Binary decision diagram / SOI-MOS device / Quantum dot detector / Single electron memory / Quantum dot / Single electron transistor / トンネル現象 / インジウム砒素(InAs) / 単電子トランジスタ(SET) / 分割ゲート構造 / テラヘルツ光 / 帯電効果 / 量子箱 / 単電子素子 / 単電子回路シミュレータ / 非対照ターンスケール / 単電子FETメモリー / シングルエレクトロン多数決論理システム / InAs系 / InAs量子ドット / サブバンド間遷移 / 単電子多数決論理システム / 単電子回路シュミレーター / 非対称ターンスケール / SET寸法スケーリング / FETメモリー / ヘテロ接合界面・表面層原子配列 / EL2欠陥 / ホット・エレクトロン輸送 / 2次元電子ガス / 表面保護膜 / 広バンド・ギャップ化合物半導体 / 混晶半導体表面安定化 / 欠陥分布 / レーザーCVD / 表面準位密度 / ホット・ルミネッセンス / 有効質量 / High-kゲート絶縁膜 / InAsヘテロ構造 / 高速・低消費電力 / セルフスイッチングダイオード / High-kゲート / III-V MOSFET / ヘテロ接合トランジスタ / 高速・低消費電力素子 / 高誘電率ゲート / インジウムヒ素 / 半導体ヘテロ構造 / MOSFET / 化合物半導体 / 整流特性 / 量子ポイントコンタクト / High-k / 量子ナノ構造 / テラヘルツ波 / AIGaSbヘテロ構造 / 回路応用 / 磁気抵抗 / 3分岐構造 / 整流効果 / AlGaSb ヘテロ構造 / 整流デバイス / バリスティック / 量子化コンダクタンス / 微粒子 / アンダーソン局在 / 量子ホール効果 / 電荷KTB転移 / エッジ電流 / 2次元電子系 / 量子ホ-ル効果 / 非局所抵抗 / バリスティック伝導 / メゾスコピック / STM / AB効果 / エッジ状態 / 量子化ホ-ル効果 / 超格子 / 非局所的量子伝導 Less

Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substrates
- Principal Investigator
  
  MAEMOTO TOSHIHIKO
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
High-sensitive Terahertz technology using semiconductor quantum nanostructures
- Principal Investigator
  
  MAEMOTO Toshihiko
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructuresPrincipal Investigator
- Principal Investigator
  
  INOUE Masataka
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Measurement engineering
- Research Institution
  Osaka Institute of Technology
Developmert of spintronics devices using InAs-based heterostructures
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology
Development of InAs-based quantum-effect devices operative at room temperature
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology
InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator
- Principal Investigator
  
  井上正崇
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka Institute of Technology
Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems
- Principal Investigator
  
  SAKAKI Hiroyuki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tokyo
InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator
- Principal Investigator
  
  井上正崇
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka Institute of Technology
InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator
- Principal Investigator
  
  井上正崇
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka Institute of Technology
量子干渉効果ディバイスの基礎
- Principal Investigator
  
  邑瀬和生
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
量子干渉効果ディバイスの基礎
- Principal Investigator
  
  邑瀬和生
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
量子干渉効果ディバイスの基礎
- Principal Investigator
  
  邑瀬和生
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
Control and Device Application of 2D Electrons and Holes in Polytype HeterostructuresPrincipal Investigator
- Principal Investigator
  
  INOUE Masataka
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Osaka Institute of Technology
混晶の物性とその制御・設計に関する研究
- Principal Investigator
  
  犬石嘉雄
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  Kinki University
混晶の物性とその制御・設計に関する研究
- Principal Investigator
  
  犬石嘉雄
- Project Period (FY)
  1986
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  Kinki University
半導体2次元電子ガスと超高周波音波との相互作用Principal Investigator
- Principal Investigator
  
  井上正崇
- Project Period (FY)
  1985
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  Osaka Institute of Technology

All 2012 2011 2008 2007 2006 Other

All Journal Article Presentation Book

[Book] 高周波半導体材料・デバイスの新展開2006
- Author(s)
  佐々誠彦, 井上正崇
- Total Pages
  12
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18560421
[Book] 高周波半導体材料・デバイスの新展開(第11編, 第1章 2.InAs系ヘテロ接合デバイスとMBE成長技術)2006
- Author(s)
  佐々誠彦, 井上正崇
- Total Pages
  12
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 114-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano -diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices Kansai
  
  Volume: 1巻 Pages: 114-115
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices, Kansai
  
  Volume: 1巻 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AIGaSb Ballistic Devices2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Phys.Stat.Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb three-terminal ballistic junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, K. Fujiwara, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.107, No.473-474
  
  Pages: 29-32
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_<2 >Gate Insulators2008
- Author(s)
  K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  Proc. Of the 2008 International Meeting for Future of Electron Devices, Kansai c
  
  Pages: 73-74
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  J. of Physics: Conf. Ser. 109 012023
  
  Pages: 1-3
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics : Conf. Ser. 109
  
  Pages: 12023-12023
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in lnAsIAlGaSb Ballistic Devices2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Phys. Stat. Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron "Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices"2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto,S. Sasa, and M. Inoue
- Journal Title
  
  phys. Stat. sol. c 5
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fuiiwara, N, Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of the 2008 International Meeting for Future of Electron Devices, Kansai
  
  Pages: 73-74
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics: Conf. Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions2008
- Author(s)
  M Koyama, T Inoue, N Amano, T Maemoto, S Sasa and M.Inoue
- Journal Title
  
  Journal of Phys 109
  
  Pages: 120231-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AIGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  J.of Physics:Conf.Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristjcs of eiectron mobility and velocity in lnAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Ballistic transport and rectification effects in lnAs/AlGaSb mesoscopic stricture2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.520-521
  
  Pages: 67-71
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic rectification effects in lnAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 577-578
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertzwaves2007
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Proc. of the 2007 International Meeting for Future of Electron Devices 5
  
  Pages: 81-82
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Investigation of Sb-Based Diode Structures for Detecting Subterahertz Waves2007
- Author(s)
  T. lnoue, N. Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser, A 52
  
  Pages: 25-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and veloclty in InAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Improved Stability of High-Performance ZnO/ZnMgO Hetero.MISFETs2007
- Author(s)
  S.Sasa, T.Hayafuji, M.Kawasaki, K.Koike, M.Yano, M.Inoue
- Journal Title
  
  Electron Device Letters, IEEE 28
  
  Pages: 543-545
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic rectification effects in InAs/AlGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser. A 51
  
  Pages: 15-19
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic rectification effects in InAs/AIGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and velocity in InAs/AIGaSb HFETs with high-k gate insulators2007
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 1391-1392
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  T.Maemoto, M.Koyama, M.Furukawa, H.Takahashi, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics Conference Series Vol.38
  
  Pages: 112-115
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and Characterization of InAs Mesoscopic Devices2006
- Author(s)
  M.Koyama, M.Furukawa, H.Ishii, M.Nakai, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Springer Proceedings in Physics Vol.110
  
  Pages: 7-10
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] High-Performance ZnO/ZnMgO Field-Effect Transistors using a Hetero-Metal-Insulator-Semiconductor Structure2006
- Author(s)
  S.Sasa, M.Ozaki, K.Koike, M.Yano, M.Inoue
- Journal Title
  
  Appl.Phys.Lett. vol.89
  
  Pages: 53502-53504
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron Transport properties in InAs/AlGaSb Ballistic Rectifiers2006
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of the 2006 International Meeting for Future of Electron Devices,Kansai
  
  Pages: 85-86
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Memories of the Osaka Institute of Technology,Series A Vol.51
  
  Pages: 15-19
- NAID
  110006162463
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.403
  
  Pages: 19-22
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of Int. Mtg. on Future Electron Devices Kansai 2006
  
  Pages: 85-86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport in InAs field effect and mesoscopic devices2006
- Author(s)
  M.Koyama, M.Furukawa, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc.of 12th Int.Conf.on Narrow Gap Semicond.,Inst.Phys.Conf.Ser. Vol.187
  
  Pages: 445-449
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  phys. Stat. sol.c 印刷中
  
  Pages: 0-0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March Meeting 2012
- Place of Presentation
  ボストンコンベンションセンター（アメリカ）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平，西坂和一，前元利彦，佐々誠彦，井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  関西大学100周年記念会館，大阪
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March meeting 2012
- Place of Presentation
  Boston, Massachusetts, USA
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
  Y. Kimura, Y. Sun, T. Maemoto, S. Sasa , S. Kasai and M. Inoue
- Organizer
  25th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kobe Meriken Park Oriental Hotel, Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平, 西坂和一, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  大阪府吹田市
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
  Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  25^<th> International Microprocess and Nanotechnology Conference
- Place of Presentation
  Kobe, Hyogo, Japan
- Year and Date
  2012-10-31
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  24^<th> Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2011-10-26
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  24th Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
  ANAホテル京都（京都府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Proceedings of the 2011 International Meeting for Future of Electron Devices
- Place of Presentation
  関西大学（大阪府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2011 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 高誘電率材料を用いたInAs/AlGaSb HEMT の作製と評価2008
- Author(s)
  藤原健司,塩路真広,天野直樹,小山政俊,前元利彦,佐々誠彦,井上正崇
- Organizer
  2008 年秋季第70 回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators2008
- Author(s)
  T. Maemoto, K. Fujiwara, T. Inoue, N. Amano, M. Koyama, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2008
- Place of Presentation
  New Orleans, USA
- Year and Date
  2008-03-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  2008 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2008-05-02
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2008
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Rust,Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] 高誘電率材料を用いたInAs/AIGaSb HEMTの作製と評価2008
- Author(s)
  藤原健司, 塩路真広, 天野直樹, 小山政俊, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2008年秋季第70回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and Characrerization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Nonlinear Electron Transport properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa, and M.Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology 2007
- Place of Presentation
  Waikaloa,Hawaii,USA
- Year and Date
  2007-12-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] InAs/AlGaSb量子細線を有するT字型3分岐構造における電子輸送特性2007
- Author(s)
  小山政俊, 中島貴史, 井上達也, 天野直樹, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学,北海道
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors
- Place of Presentation
  Tokyo Univ., Japan
- Year and Date
  2007-07-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic rectification in four-terminal InAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2007
- Place of Presentation
  Denver, USA
- Year and Date
  2007-03-07
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabrication and Characterization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  Hawaii, USA
- Year and Date
  2007-12-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2007
- Place of Presentation
  Osaka Univ., Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves(2)2007
- Author(s)
  T. Inoue, H. Takahashi, T. Maemoto, S. Sasa, M. lnoue
- Organizer
  JSAP Annual meeting
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2007-03-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Field characteristics of electron mobility and velocity in InAs/AlGaSb HFETs with high-k gate insulators2006
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic Rectification effects in InAs/AlGaSb Nano-structures2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabricatior and characterization of Sb-based diode structures for detectinc, subterahertz waves2006
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  IEICE Technical meetings
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-12-08
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear electron transport properties in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2006
- Place of Presentation
  Kyoto Univ., Japan
- Year and Date
  2006-04-21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421

1. SASA Shigehiko (50278561)

# of Collaborated Projects: 7 results

# of Collaborated Products: 67 results
2. MAEMOTO Toshihiko (80280072)

# of Collaborated Projects: 3 results

# of Collaborated Products: 63 results
3. 邑瀬和生 (50028164)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. 川路紳治 (00080440)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. 荒川泰彦 (30134638)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. 小林俊一 (90029471)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
7. 浜口智尋 (40029004)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. 矢野満明 (40200563)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 犬石嘉雄 (90028902)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. 白藤純嗣 (70029065)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. 新井夫差子 (10010927)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. 赤崎勇 (20144115)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. 長谷川文夫 (70143170)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. IWAI Yoshio (60079530)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SAKAKI Hiroyuki (90013226)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. TANIGUCHI Kenji (20192180)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. TSUBOUCHI Kazuo (30006283)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. AMEMIYA Yoshihito (80250489)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. HOU Koichiro (60211538)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 佐々木亘 (90011436)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

INOUE Masataka 井上 正崇

井上 正崇 イノウエ マサタカ

井上 正嵩

Research Projects

Research Products

Co-Researchers

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Institution

InAs系ヘテロ極微構造における量子輸送現象とデバイス応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Control and Device Application of 2D Electrons and Holes in Polytype HeterostructuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Institution

半導体2次元電子ガスと超高周波音波との相互作用Principal Investigator

Principal Investigator

Project Period (FY)

INOUE Masataka 井上正崇

井上正崇イノウエマサタカ

井上正嵩