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TANIWAKI Masafumi  谷脇 雅文

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… Alternative Names

谷脇 雅文  タニワキ マサフミ

TANIWAKI M  谷脇 雅文

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Researcher Number 20133712
External Links
Affiliation (based on the past Project Information) *help 2012: 高知工科大学, 環境理工学群, 教授
2010 – 2012: 高知工科大学, 工学部, 教授
2002 – 2006: 高知工科大学, 工学部, 教授
2000: 高知工科大学, 工学部, 教授
1997 – 1998: 高知工科大学, 工学部, 教授
1996: 北海道大学, 工学部, 助教授
1988: Department of Electronic Engineering, Faculty of Engineering Hokkaido University, 工学部, 助手
Review Section/Research Field
Principal Investigator
Physical properties of metals / Structural/Functional materials / Applied materials science/Crystal engineering / Physical properties of metals / Physical properties of metals
Except Principal Investigator
Science and Engineering
Keywords
Principal Investigator
GaSb / イオン注入 / 自己組織化 / ボイド / イオン照射 / 相変態 / 化合物半導体 / 非晶質 / インジウムリン / インジウムリン アンチモン … More / 電子顕微鏡 / ナノファブリケイション / ナノセル / イオンビーム / 点欠陥 / 半導体 / ナノ構造 / FIB / ガリウムアンチモン / 電気抵抗 / インジウムアンチモン / 岩塩型 / ガリウムヒ素 / 高温超伝導 / ジョセフソン接合 / 薄膜 / 照射欠陥 / レーザーアブレイション / FE-TEM / YBCO / 格子欠陥 / 原子空孔 / 格子間原子 / 半導体超微細化 / InSb / セル状構造 / ナノファブリケーション / 表面 / TEM / 照射損傷 / ナノテクノロジー / セル構造 / ion implantation / void / point defect / cellular structure / nano fabrication / surface / semiconductor / 非晶質合金 / メスバウアー効果 / 電子構造 / 熱的安定性 / Amorphous alloy / Mossbauer effect / Electronic structure … More
Except Principal Investigator
水素吸蔵合金 / イオン注入 / 初期活性化 / 表面ナノ構造 / 表層改質 / イオンビーム / 表面改質 / 表面活性化 / 水素拡散能 / 水素化物 / 表面被膜 / 活性化エネルギー Less
  • Research Projects

    (9 results)
  • Research Products

    (93 results)
  • Co-Researchers

    (13 People)
  •  Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defectsPrincipal Investigator

    • Principal Investigator
      TANIWAKI Masafumi
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Physical properties of metals
    • Research Institution
      Kochi University of Technology
  •  超微細セル状表面構造を高機能デバイスに利用するための基礎的研究Principal Investigator

    • Principal Investigator
      谷脇 雅文
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Physical properties of metals
    • Research Institution
      Kochi University of Technology
  •  Formation of honeycomb structure by ion implantation- clarification of the mechanism and its application to nano-fabricationPrincipal Investigator

    • Principal Investigator
      TANIWAKI Masafumi
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Physical properties of metals
    • Research Institution
      Kochi University of Technology
  •  イオンミキシング法による水素吸蔵合金の表層ナノ構造の改質

    • Principal Investigator
      渡辺 精一
    • Project Period (FY)
      2000
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  イオン注入による水素吸蔵合金の表層ナノ構造の改質

    • Principal Investigator
      大貫 惣明
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  高温超伝導ジョセフソン素子の新しい形成法-電界放射型透過電子顕微鏡の利用-Principal Investigator

    • Principal Investigator
      谷脇 雅文
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kochi University of Technology
  •  低温イオン注入誘起相変態現象の探索と機構の解明Principal Investigator

    • Principal Investigator
      谷脇 雅文
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kochi University of Technology
  •  化合物半導体における低温イオン注入誘起相変態の研究Principal Investigator

    • Principal Investigator
      谷脇 雅文
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Structural/Functional materials
    • Research Institution
      Kochi University of Technology
      Hokkaido University
  •  The study on the electronic structure and the crystallization process of metal-metal amorphous alloysPrincipal Investigator

    • Principal Investigator
      TANIWAKI M
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Physical properties of metals
    • Research Institution
      Hokkaido University

All 2013 2012 2011 2010 2007 2006 2004 2003 2002

All Journal Article Presentation

  • [Journal Article] 集束イオンビームによるゲルマニウム表面ナノセル構造の作製2013

    • Author(s)
      森田憲治, 新田紀子, 谷脇雅文
    • Journal Title

      日本金属学会誌

      Volume: 77 Pages: 64-69

    • NAID

      10031155985

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Beam flux dependence of ion-irradiation-induced porous structures in III-V compound semiconductors2013

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, K. Sato, Q. Xu, T. Yoshiie, M. Taniwaki, and A. Hatta
    • Journal Title

      Radiation Effects and Defects in Solids

      Volume: 168 Pages: 247-252

    • DOI

      10.1080/10420150.2012.737329

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268, KAKENHI-PROJECT-24760539
  • [Journal Article] Beam flux dependence of ion-irradiation-induced porous structures in III -V compound semiconductors2013

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, K. Sato, Q. Xu, T. Yoshiie, M. Taniwaki, and A. Hatta
    • Journal Title

      Radiation Effects and Defects in Solids

      Volume: 168 Pages: 247-252

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013

    • Author(s)
      H. Kanbe, M. Tada, T. Kochigahama and M. Taniwaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • NAID

      210000141720

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013

    • Author(s)
      Hiroshi Kanbe, Masanori Tada, Takuya Kochigahama, Masafumi Taniwaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 1R Pages: 011201-011201

    • DOI

      10.7567/jjap.52.011201

    • NAID

      210000141720

    • ISSN
      0021-4922, 1347-4065
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Nanocell fabrication on GaSb at room temperature and cryogenic temperature2012

    • Author(s)
      N. Nitta, K. Yokoyama, and M. Taniwaki
    • Journal Title

      AIP Conference Proceedings

      Volume: (accepted)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Nanocell fabrication on GaSb at room temperature and cryogenic temperature2012

    • Author(s)
      Noriko Nitta, Kazuhiro Yokoyama and Masafumi Taniwaki
    • Journal Title

      AIP Conf. Proc.

      Volume: 1496 Pages: 280-283

    • DOI

      10.1063/1.4766543

    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Nanocell fabrication on GaSb at room temperature and cryogenic temperatur2012

    • Author(s)
      N. Nitta, K. Yokoyama and M. Taniwaki
    • Journal Title

      AIP Conf. Proc.

      Volume: 1496 Pages: 280-283

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Secondary defects induced by ion and electron irradiation of GaSb2011

    • Author(s)
      N.Nitta, E.Taguchi, H.Yasuda, H.Mori, Y.Hayashi, T.Yoshiie, M.Taniwaki
    • Journal Title

      Philosophical Magazine Letters

      Volume: 91 Pages: 223-228

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Void formation and structure change induced by heavy ion irradiation in GaSb and InSb2011

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie and M. Taniwaki, and H. Mori
    • Journal Title

      Mater. Trans.

      Volume: 51 Pages: 1059-1063

    • NAID

      10027018029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Nano-Cell Fabrication on InSb Utilizing Point Defects Behavior Induced by Focused Ion Beam2011

    • Author(s)
      Sayo Morita, Noriko Nitta, Masafumi Taniwaki a
    • Journal Title

      Surface & Coatings Technology

      Volume: (掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Fabrication of Tetragonal and Close-Packed Nano-cell Two-Dimensional Lattices by Ga+ beam on InSb Surface2011

    • Author(s)
      K.Takahashi, O.Ishikawa, K.Yokoyama, M.Taniwaki, N.Nitta
    • Journal Title

      AIP Conference Proceedings 1321, Ion Implantation Technology 2010, edited by J.Matsuo, M.Kase, T.Aoki, and T.Seki

      Pages: 282-285

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60keV Sn ions2011

    • Author(s)
      G.T.Dang, T.Kawaharamura, N.Nitta, T.Hirao, T.Yoshiie, M.Taniwaki
    • Journal Title

      J.Appl.Phys.

      Volume: 109

    • DOI

      10.1063/1.3598068

    • NAID

      120004920368

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Characteristics of ZnO Wafers Implanted with 60 keV Sn+ Ions at Room Temperature and at 110 K2011

    • Author(s)
      G.T.Dang, T.Kaharamura, T.Hirao, N.Nitta, M.Taniwakia
    • Journal Title

      AIP Conference Proceedings 1321, Ion Implantation Technology 2010, edited by J.Matsuo, M.Kase, T.Aoki, and T.Seki

      Pages: 270-273

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature2011

    • Author(s)
      N.Nitta, T.Hasegawa, H.Yasuda, Y.Hayashi, T.Yoshiie, M.Taniwaki
    • Journal Title

      Materials Transactions

      Volume: 52 Pages: 127-129

    • NAID

      10027837397

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Characteristics of ZnO wafers implanted with 60 keV Sn+ ions at room temperature and at 110 K2011

    • Author(s)
      K, G. T. Dang, T. Kawaharamura, T. Hirao, N. Nitta and M. Taniwaki
    • Journal Title

      AIP Conference Proceedings

      Volume: 1321 Pages: 270-273

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Secondary defects induced by ion and electron irradiation of GaSb2011

    • Author(s)
      N. Nitta, E. Taguchi, H. Yasuda, H. Mori, Y. Hayashi, T. Yoshiie and M. Taniwaki
    • Journal Title

      Phil. Mag. Lett.

      Volume: 91 Pages: 223-228

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Void formation and structure change induced by heavy ion irradiation in GaSb and InSb2011

    • Author(s)
      N.Nitta, T.Hasegawa, H.Yasuda, Y.Hayashi, T.Yoshiie, M.Taniwaki, H.Mori
    • Journal Title

      Materials Transactions

      Volume: 51 Pages: 1059-1063

    • NAID

      10027018029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Formation of defect dtructure on Ge surface by ion irradiation at controlled Substrate Temperature2011

    • Author(s)
      Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie and M. Taniwaki
    • Journal Title

      Materials Transactions

      Volume: 52 Pages: 127-129

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO2011

    • Author(s)
      Giang T.Dang, Hiroshi Kanbe, Toshiyuki Kawaharamura, Masafumi Taniwaki
    • Journal Title

      J.Appl.Phys.

      Volume: 110

    • DOI

      10.1063/1.3653273

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn ions2011

    • Author(s)
      G. T. Dang, T. Kawaharamura, N. Nitta, T. Hirao, T. Yoshiie and M. Taniwaki
    • Journal Title

      TJ. Appl. Phys

      Volume: 109 Pages: 123516-123516

    • NAID

      120004920368

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Nano-cell fabrication on InSb utilizing point defects behavior induced by focused ion beam2011

    • Author(s)
      S. Morita, N. Nitta and M. Taniwaki
    • Journal Title

      Ssurface and Cotings Technology

      Volume: 206 Pages: 792-796

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Fabrication of tetragonal and close-packed nano-cell two-dimensional lattices by Ga+ beam on InSb Surface2010

    • Author(s)
      K. Takahashi, O. Ishikawa, K. Yokoyama, M. Taniwaki, and N. Nitta
    • Journal Title

      AIP Conference Proceedings

      Volume: 1321 Pages: 282-285

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Water Bonding2010

    • Author(s)
      H.Kanbe, M.Hirose, T.Ito, M.Taniwaki
    • Journal Title

      J.Electronic Materials

      Volume: 39 Pages: 1248-1254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding2010

    • Author(s)
      H. Kanbe, M. Hirose, T. Ito and M. Taniwaki
    • Journal Title

      Journal of Electronic Materials

      Volume: Volume 39, Issue 8 Pages: 1248-1255

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Void formation and structure change induced by heavy ion irradiation in GaSb and InSb2010

    • Author(s)
      N. Nitta, T. Hasegawa, H. Yasuda, Y. Hayashi, T. Yoshiie, M. Taniwaki, and H. Mori
    • Journal Title

      Mater. Trans.

      Volume: 51 Pages: 1059-1063

    • NAID

      10027018029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Journal Article] Kinetic Monte Carlo simulation of void swelling in GaSb irradiated with Sn at low temperature2007

    • Author(s)
      T.Yoshiie, N.Nitta, M.Taniwaki
    • Journal Title

      Nucl. Instrum. Methods B 255

      Pages: 120-123

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Nano-fabrication utilizing point defects induced by ion-implantation2007

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Surface and Coatings Technology

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Formation of metastable Fe-Cu alloy nanoparticles by ion implantation2006

    • Author(s)
      N.Hayashi, T.Moriwaki, M.Taniwaki, I.Sakamoto, A.Tanoue, T.Toriyama, H.Wakabayashi
    • Journal Title

      Thin Solid Films 505

      Pages: 152-156

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Development of Nano-fabrication Technique Utilizing Self-organizational Behavior of Point Defects Induced by Ion Irradiation2006

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Physica B 376-377

      Pages: 872-876

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Formation of Cellular Structure on GaSb Surface by Ion-Implantation2006

    • Author(s)
      N.Nitta, M.Taniwaki, Y.Hayashi, T.Yoshiie
    • Journal Title

      The 16th International Microscopy Congress Proceedings 3

      Pages: 1976-1976

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Cellular Structure Formed by Ion-Implantation Induced Point Defect2006

    • Author(s)
      N.Nitta, M.Taniwaki, Y.Hayashi, T.Yoshiie
    • Journal Title

      Physica B 376-377

      Pages: 881-885

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Development of Nano-fabrication Technique Utilizing Self-Organizational Behavior of Point Defects Induced by Ion Irradiation2006

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Physica B 376-377

      Pages: 872-876

    • Data Source
      KAKENHI-PROJECT-17656205
  • [Journal Article] Search for new materials showing self-organized formation of cellular structure by ion implantation2004

    • Author(s)
      M.Taniwaki, N.Nitta, Y.Satoh, Y.Hayashi, T.Yoshiie
    • Journal Title

      KURRI Progress Report 2003 2003

      Pages: 60-60

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Search for new materials showing self-organized formation of cellular structure by ion implantation2004

    • Author(s)
      M.Taniwaki, N.Nitta, Y.Satoh, Y.Hayashi, T.Yoshiie
    • Journal Title

      KURRI Progress Report 200 2003

      Pages: 60-60

    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] イオン注入による半導体微細セル構造の自己組織化的形成2004

    • Author(s)
      新田紀子, 谷脇雅文
    • Journal Title

      まてりあ 43巻12号

      Pages: 1014-1014

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Search for New Materials Showing Self-Organized Formation of Cellular Structure by Ion-Implantation2004

    • Author(s)
      M.Taniwaki, N.Nitta, Y.Hayashi, Y.Satoh, T.Yoshiie
    • Journal Title

      KURRI Progress Report 2003

      Pages: 60-60

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Self-Organized Formation of Cellular structure on Semiconductors by Ion-Implantation2004

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Materia Japan 43

      Pages: 1014-1014

    • NAID

      10014238976

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Novel Nano-Fabrication Technique Utilizing Ion Beam2003

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Nuclear Instruments and Methods B 206

      Pages: 482-485

    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Novel Nano-Fabrication Technique Utilizing Ion Beam2003

    • Author(s)
      N.Nitta, M.Taniwaki
    • Journal Title

      Nucl.Instrum.Methods B 206

      Pages: 482-485

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Proposal of New Nano-Fabrication Technique Utilizing Ion Beam2003

    • Author(s)
      N.Nitta, M.Taniwaki, Y.Hayashi, Y.Satoh, T.Yoshiie
    • Journal Title

      KURRI Progress Report 2002

      Pages: 76-76

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Proposal of New Nano-Fabrication Technique Utilizing Ion Beam2003

    • Author(s)
      N.Nitta, M Taniwaki, Y.Hayashi, Y.Satoh, T.Yoshiie
    • Journal Title

      KURRI Progress Report 2002

      Pages: 76-76

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Formation of Cellular Defect Structure on GaSb Ion-implanted at a Low Temperature2002

    • Author(s)
      N.Nitta, M.Taniwaki, Y.Hayashi, T.Yoshiie
    • Journal Title

      Journal of Applied.Phyics 92巻

      Pages: 1799-1802

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation2002

    • Author(s)
      N.Nitta, M.Taniwaki, T.Suzuki, Y.Hayashi, Y.Satoh, T.Yoshiie
    • Journal Title

      Mater.Trans. 43

      Pages: 674-680

    • NAID

      10012322315

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Formation of Cellular Defect Structure on GaSb Ion-implanted at a Low Temperature2002

    • Author(s)
      N.Nitta, M.Taniwaki, Y.Hayashi, T.Yoshiie
    • Journal Title

      J.Appl.Phys. 92

      Pages: 1799-1802

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Journal Article] Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation2002

    • Author(s)
      N.Nitta, M.Taniwaki, T.Suzuki, Y, Hayashi, Y.Satoh, T.Yoshiie
    • Journal Title

      Materials Transactions 43巻

      Pages: 674-680

    • NAID

      10012322315

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350343
  • [Presentation] Fabrication of Josephson-Junction utilizing nanocell on compound semiconductor GaSb2013

    • Author(s)
      K. Shigematsu, K. Becchaku, K. Morita, K. Yokoyama, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of nano-cell structure on InSb surface filled with heterogeneous material2013

    • Author(s)
      K. Betchaku, K. Nakauchi, O. Ishikawa, N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nnomaterials
    • Place of Presentation
      ソレント(イタリア)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Optical property and crystallographical structure of metal doped TiO2 thin films fabricated by pulsed laser deposition2013

    • Author(s)
      T . Nishiuchi, A. Sakamoto, N. Kawadu, M. Ikeuchi, K. Hayashi, H. Tomozawa, S. Kusuno, N. Nishimura, R. Kodama, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of Josephson junction utilizing nanocell on compound semiconductor GaSb2013

    • Author(s)
      K. Shigematsu, K. Betchaku, K. Morita, K. Yokoyama , N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nnomaterials
    • Place of Presentation
      ソレント(イタリア)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] イオン照射誘起化合物半導体ポーラス構造の加速電圧依存性2013

    • Author(s)
      新田紀子, 西内大貴, 谷脇雅文, 八田章光
    • Organizer
      日本金属学会第148回春期大会
    • Place of Presentation
      東京理科大学
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Optical property and crystallographical structure of metal doped TiO22013

    • Author(s)
      T. Nishiuchi, S. Ayumi, N. Kawadu, M. Ikeuchi, K. Hayashi, H. Tomozawa, N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nnomaterials
    • Place of Presentation
      ソレント(イタリア)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication and characterization of environmentally conscionable semiconductor b-FeSi22013

    • Author(s)
      N. Nishioka, M. Okamoto, N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nnomaterials
    • Place of Presentation
      ソレント(イタリア)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication and characterization of environmentally conscionable semiconductor β-FeSi22013

    • Author(s)
      N. Nishioka, M. Okamoto, N. Nitta and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] イオン照射誘起化合物半導体ポーラス構造の加速電圧依存性2013

    • Author(s)
      新田紀子, 西内大貴, 谷脇雅文, 八田章光
    • Organizer
      日本金属学会
    • Place of Presentation
      東京理科大(東京神楽坂)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of nano-cell structure on InSb surface filled with heterogeneous material2013

    • Author(s)
      K. Becchaku, N. Nitta, and M. Taniwaki
    • Organizer
      Third International Conference on Multifunctional, Hybrid and Nanomaterials
    • Place of Presentation
      Hilton Sorrento Palace Hotel, Sorremto, Italy
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 電子デバイスを目指した充填ナノセルの形成2012

    • Author(s)
      別役和秀, 中内和也, 西岡誠剛, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 電子デバイスを目指した充填ナノセルの形成2012

    • Author(s)
      別役 和秀 中内 和也 西岡 誠剛 新田 紀子 谷脇 雅文
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大(松山)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] ジョセフソン接合のバリア層を指向したFIB によるGaSb 表面ナノセル構造の作製2012

    • Author(s)
      重松晃次, 別役和秀, 森田憲治, 横山和弘, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of nanocell lattice on semiconductor utilizing point defects movement induced by ion irradiation2012

    • Author(s)
      M. Taniwaki and N. Nitta
    • Organizer
      XI International Conference on Nanostructure Materials (Nano2012)
    • Place of Presentation
      Rodos Palace International Convention Center, Rodos, Greece
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Nano-cell fabrication on GaSb and InSb compound semiconductors by focused ion beam at room temperature2012

    • Author(s)
      M. Taniwaki, O. Ishikawa, K. Yokoyama and N. Nitta
    • Organizer
      19 th International Conference on Ion Implantation Technology (IIT 2012)
    • Place of Presentation
      Congress Center , Valladolid, Spain
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of nanocell lattice on semiconductor utilizing point defects movement induced by ion irradiation2012

    • Author(s)
      M. Taniwaki and N. Nitta
    • Organizer
      XI International Conference on Nanostructure Materials (Nano2012)
    • Place of Presentation
      XI International Conference on Nanostructure Materials (Nano2012)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] ジョセフソン接合のバリア層を指向したFIBによるGaSb表面ナノセル構造の作製2012

    • Author(s)
      重松 晃次 別役 和秀 森田 憲治 横山 和弘 新田 紀子 谷脇 雅文
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大(松山)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 環境半導体β-FeSi2薄膜の作製と評価2012

    • Author(s)
      西岡 誠剛 新田 紀子 谷脇 雅文
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大(松山)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム法によるGe表面ナノセル構造の作製2012

    • Author(s)
      森田 憲治 新田 紀子 谷脇 雅文
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大(松山)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム法によるGe 表面ナノセル構造の作製2012

    • Author(s)
      森田憲治, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 低エネルギー電子照射によるナノ結晶形成の照射温度依存性2012

    • Author(s)
      新田 紀子 西内 大貴 谷脇 雅文 八田 章光 保田 英洋
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大(松山)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 環境半導体β-FeSi2 薄膜の作製と評価2012

    • Author(s)
      西岡誠剛, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] いくつかの半導体に見られる特異なイオン照射挙動とこれを利用した新しい微細構造作製技術2012

    • Author(s)
      谷脇 雅文
    • Organizer
      材料照射効果と応用ワークショップ
    • Place of Presentation
      京都大学原子炉実験所
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of ordered nano-cell structure on Ge surface by FIB2012

    • Author(s)
      K. Morita, N. Nitta and M. Taniwaki
    • Organizer
      25th International Conference on Atomic Collisions in Solids (ICACS25)
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Characterization of hydrothermal bulk ZnO implanted at room temperature with 60 keV Sn^+ ions2011

    • Author(s)
      Giang T.Dang, T.Kawaharamura, N.Nitta, T.Hirao, T. Yoshiie, M.Taniwaki
    • Organizer
      11th International Workshop on Plasma-Based Ion Implantation and Deposition (PBII&D 2011)
    • Place of Presentation
      Harbin (China)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Characterization of hydrothermal bulk ZnO implanted at room temperature with 60 keV Sn+ ions2011

    • Author(s)
      Giang T. Dang, T. Kawaharamura, N. Nitta, T. Hirao, T. Yoshiie and M. Taniwaki
    • Organizer
      11th International Workshop on Plasma-Based Ion Implantation and Deposition (PBII&D 2011)
    • Place of Presentation
      Harbin (China)
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム法によるGaSbナノセル構造の作製2011

    • Author(s)
      政本泰佑, 石川修, 森田憲治, 横山和弘, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] FIBによる化合物半導体GaSb表面微細構造の作製2011

    • Author(s)
      横山和弘 石川 修 高橋和之 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビームによるInSb表面ナノセル構造の作製2011

    • Author(s)
      石川修, 横山和弘, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Photoluminescence mechanisms of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 K to 296 K2011

    • Author(s)
      Giang T. Dang, Hiroshi Kanbe and Masafumi Taniwaki
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 不純物ドープしたTiO2の構造と光学特性2011

    • Author(s)
      谷脇雅文 河津直紀
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビームによる化合物半導体GaSbセル構造の制御2011

    • Author(s)
      横山和弘, 高橋和之, 森田憲治, 石川修, 政本泰佑, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム法によるGaSb ナノセル構造の作製2011

    • Author(s)
      政本泰佑, 石川修, 森田憲治, 横山和弘,新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Evaluation of nano-cell lattice on semiconductor surface fabricated by FIB2011

    • Author(s)
      M.Taniwaki, O. Ishikawa, K. Yokoyama, K. Takahashi and N.Nitta
    • Organizer
      The 17th international conference on surface modification of materials by ion beams
    • Place of Presentation
      Harbin (China)
    • Year and Date
      2011-09-15
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] FIB によるInSb 表面ナノセル構造の作製2011

    • Author(s)
      石川修, 横山和弘, 高橋和之, 森田憲治,政本泰祐,新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] レーザーアブレーション法によるFe-Si系半導体薄膜の作製と分析2011

    • Author(s)
      横田正博,山本知起 新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム によるInSb 表面ナノセル構造 の作製2011

    • Author(s)
      石川 修 横山和弘 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] レーザーアブレーション法によるFe-Si系半導体薄膜の作製と分析2011

    • Author(s)
      横田正博, 山本知起, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] FIBによるInSb表面ナノセル構造の作製2011

    • Author(s)
      石川修, 横山和弘, 高橋和之, 森田憲治, 政本泰祐, 新田紀子, 谷脇雅文
    • Organizer
      日本金属学会第146回秋期大会
    • Place of Presentation
      沖縄コンベンションセンター
    • Year and Date
      2011-11-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビームによる化合物半導体GaSb セル構造の制御2011

    • Author(s)
      横山和弘, 高橋和之, 森田憲治石川修,政本泰佑, 新田紀子, 谷脇雅文
    • Organizer
      日本材料科学会四国支部第20回講演大会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] 集束イオンビーム法によるInSb表面微細構造作製条件の検討2010

    • Author(s)
      石川修, 横山和弘, 高橋和之, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-25
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Photoluminescence of ZnO wafers implanted with 60 keV Sn^+ ions to doses from 2×10^<14> to 1.5×10^<15> cm^<-3> at 112K and room temperature2010

    • Author(s)
      G.T.Dang, T.Kawaharamura, T.Hirao, N.Nitta, M.Taniwaki
    • Organizer
      18th Int.Conf.on Ion Implantation Technology
    • Place of Presentation
      京都大学
    • Year and Date
      2010-06-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] イオン照射によりGaSb及びInSbに形成される構造のフラックス依存性2010

    • Author(s)
      長谷川季也, 新田紀子, 保田英洋, 佐藤紘一, 徐〓, 義家敏正, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-26
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] レーザーアブレーション法によるFe-Si系半導体薄膜の作製と分析2010

    • Author(s)
      山本知起, 横田正博, 山川智弘, 岡真由美, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-27
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] FIBによる化合物半導体GASb稠密ナノセル構造の作製2010

    • Author(s)
      横山和弘, 石川修, 高橋和之, 谷脇雅文
    • Organizer
      日本金属学会第147回秋期大会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-27
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Fabrication of Tetragonal and Close-Packed Nano-cell Structureon Compound Semiconductor Surface2010

    • Author(s)
      K.Takahashi, O.Ishikawa, K.Yokoyama, M.Taniwaki, N.Nitta
    • Organizer
      18th Int.Conf.on Ion Implantation Technology
    • Place of Presentation
      京都大学
    • Year and Date
      2010-06-08
    • Data Source
      KAKENHI-PROJECT-22360268
  • [Presentation] Photoluminescence of ZnO wafers implanted with 60keV Sn^+ ions to doses from 2×10^<14> to 1.5×10^<15> cm^<-3> at 112K and room temperature2010

    • Author(s)
      G.T.Dang, T.Kawaharamura, T.Hirao, N.Nitta, M.Taniwaki
    • Organizer
      18^<th> Int.Conf.on Ion Implantation Technology
    • Place of Presentation
      京都大学
    • Year and Date
      2010-07-07
    • Data Source
      KAKENHI-PROJECT-22360268
  • 1.  YOSHIIE Toshimasa (20124844)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 26 results
  • 2.  KANBE Hiroshi (10299373)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 6 results
  • 3.  MAEDA Toshihiko (50399169)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  NITTA Noriko (80412443)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 65 results
  • 5.  鈴木 朝夫 (80016782)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  大貫 惣明 (10142697)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  須田 孝徳 (50301940)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  渡辺 精一 (60241353)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  兜森 俊樹
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  XU Qiu (90273531)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  SATOH Yuhki (20211948)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 12.  MAEDA M (80001105)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  徐 ぎょう
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results

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