Enta Yoshiharu 遠田義晴

… Alternative Names

ENTA YOSHIHARU 遠田義晴

ENTA Yoshiharu 遠田義春

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Researcher Number	20232986
Other IDs
External Links
Affiliation (Current)	2025: 弘前大学, 理工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2024: 弘前大学, 理工学研究科, 准教授 2015 – 2021: 弘前大学, 理工学研究科, 准教授 2009 – 2011: Hirosaki University, 大学院・理工学研究科, 准教授 2009 – 2011: 弘前大学, 理工学部, 准教授 2008 – 2009: 弘前大学, 理工学研究科, 准教授 1999 – 2000: Faculty of Science, Hirosaki University, Associate Prof., 理工学部, 助教授 1993 – 1998: Univ., RIEC, Assistant, 電気通信研究所, 助手
Review Section/Research Field	Principal Investigator 表面界面物性 / Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related / Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related / Nanomaterials engineering / Electronic materials/Electric materials Except Principal Investigator Thin film/Surface and interfacial physical properties / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / 電子デバイス・機器工学 … More / 表面界面物性 / Electronic materials/Electric materials / Applied materials science/Crystal engineering / 計測・制御工学 / 電子材料工学 Less
Keywords	Principal Investigator 光電子分光 / シリコン酸化膜 / その場観察 / リアルタイム / Si(100) / 還元反応 / 電子線照射 / RHEED / 熱脱離 / 放射光 … More / 半導体 / 表面準位 / 振動 / 結晶成長 / 気相励起 / 絶縁膜 / SiC / 界面 / 新奇形成法 / 量子ドット / ナノ構造形成 / 電子顕微鏡 / ナノ構造 / ボイド / photoelectron oscillation / real-time measurement / in-situ observation / oscillation / photoelectron spectroscopy / epitaxial growth / Si (100) / 光電子強度 / 紫外光電子分光 / 薄膜成長 / ウェット酸化 / ドライ酸化 / ゲート酸化膜 / リアルタイム測定 / 酸化速度 / 内殻準位 / 熱酸化 / 内殼準位 / シリコン / 光電子強度振動 / ジシラン / 膜厚測定 … More Except Principal Investigator 赤外分光 / 半導体 / CVD / ナノドット / 多重内部反射 / 固液界面 / GeSn / Bi / Ge / 量子ドット / 半導体ナノ構造 / シリコン / hydrogen desorption / Si (100) / Multiple internal reflection / その場観察 / 半導体表面 / 放射光 / エッチング / 酸化 / 反応機構 / 電極反応 / Sn / IV族半導体 / Large-diameter Si wafer / In-line monitoring / organic materials / surface contamination / Infrared spectroscopy / Semiconductor / インライン・モニタリング / 大口径ウェーハ / インライン・モニタ / 有機物 / 表面汚染 / disilane / silane / silicon carbide / doping / gas-source MBE / silicon epitaxy / 脱離 / 吸着 / ガスソース MBE / アセチレン / 酸化過程 / 水素 / ホスフィン / ジシラン / シラン / 炭化ケイ素 / 水素脱離 / ドーピング / ガスソースMBE / シリコンエピタキシー / Photodecomposition / Layred structure / Synchrotron radiation / Ultraviolet light / Ultra-thin film / Organometallic compound / Photo-induced catalytic reaction / 光分解反応 / 層状構造 / 紫外光 / 超薄膜 / 有機金属 / 光触媒反応 / photoelectron oscillation / gas-source epitaxy / in-situ observation / photoelectron spectroscopy / epitaxial growth / light-assisted process / 光電子分光 / Si(100) / 光電子強度振動 / 気相成長 / 水素脱離反応 / 紫外光電子分光 / 半導体結晶成長 / 光励起プロセス / Semiconductor fabrication process / Solid-liquid interface / In-situ monitoring / Atomic scale monitoring / Semiconductor surface / infrared reflection Spectroscopy / 表面処理 / 大気酸化 / 評価装置 / 原子制御 / 半導体プロセス / 原子制御計測 / 赤外反射分光 / Photo-Induced Reaction / Semiconductor Surface / Low-Temperature Process / Dielectric Film / Synchrotron Radiation / 放射光励起 / 光励起反応 / 低温薄膜形成 / 高誘電体薄膜 / ナノリボン / 金属 / 電子物性 / 表面終端 / 表面微細加工 / ステップ / エピタキシャルグラフェン / グラフェン / Siスペーサ層 / ナノ構造 / Geドット / 量子構造 / ナノリング / SiGe / 多重反射 Less

複合励起分子を用いた炭化ケイ素表面絶縁膜のリアルタイム反応制御と高品質化Principal Investigator
- Principal Investigator
  
  遠田義晴
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hirosaki University
将来の革新デバイスに向けたBi・Sn媒介GeSnナノドット形成技術の研究
- Principal Investigator
  
  岡本浩
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hirosaki University
Quantum-dots formation in a buried interface by external-electron-energy injectionPrincipal Investigator
- Principal Investigator
  
  ENTA Yoshiharu
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
- Research Institution
  Hirosaki University
Semimetal (metal) mediated group-IV-semiconductor nanostructure formation and its application for next-generation fundamental device technologies
- Principal Investigator
  
  Okamoto Hiroshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University
Formation and reaction control of silicon nanostructures by vacuum thermal decompositionPrincipal Investigator
- Principal Investigator
  
  ENTA YOSHIHARU
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Nanomaterials engineering
- Research Institution
  Hirosaki University
STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBON
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Reaction mechanism of nano-scale silicon-insulator thin films by real-time observationPrincipal Investigator
- Principal Investigator
  
  ENTA Yoshiharu
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University
新奇量子構造SiGeナノハットおよびナノリングの自己組織的形成
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
リアルタイム光電子分光法によるシリコン熱酸化過程の研究Principal Investigator
- Principal Investigator
  
  遠田義晴
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Hirosaki University
赤外反射分光法による半導体電極-溶液界面反応機構の研究
- Principal Investigator
  
  庭野道夫
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tohoku University
Developmental Research of an Apparatus for In-line Monitoring of Contamination on Si Wafer Surface
- Principal Investigator
  
  NIWANO Michio
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tohoku University
赤外反射分光法による半導体電極-溶液界面反応機構の研究
- Principal Investigator
  
  HIWANO Michio
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
リアルタイム光電子分光による半導体表面準位の新解析法Principal Investigator
- Principal Investigator
  
  遠田義晴
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Tohoku University
Surface chemistry of hydrogen on Si surfaces
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  TOHOKU UNIVERSITY
In-situ Observation of Atomic Layr Epitaxy by Photoelectron OscillationPrincipal Investigator
- Principal Investigator
  
  ENTA Yoshiharu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
The Study of Synchrotron-Radiation-Stimulated Surface Chemical Reactiions on Semiconductors by Surface Electron Spectroscopy
- Principal Investigator
  
  SUEMITSU Maki, 宮本信雄
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Fabrication of Multi-Layred Thin Film Structure by Photo-induced Catalytic Reactions of Organometallic Compounds
- Principal Investigator
  
  NIWANO Michio
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
角度分解光電子強度の周期的振動による単原子層結晶成長制御に関する研究Principal Investigator
- Principal Investigator
  
  遠田義晴
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of Atomic-Scale, Infrared Reflection Spectroscopic Techniques for Characterization of Semiconductor Surfaces
- Principal Investigator
  
  NIWANO Michio
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  計測・制御工学
- Research Institution
  Tohoku University
Low-Temperature Deposition of Dielectric Films Using Synchrotron Radiation-Assisted Gas-Source CVD
- Principal Investigator
  
  HIWANO Michio
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University

All 2022 2021 2020 2019 2018 2017 2016 2015 2012 2011 2010 2009 Other

All Journal Article Presentation

[Journal Article] Annealing-induced void formation in SiO2 layers on Si substrates: Influence of surface orientation and hydrocarbon exposure2022
- Author(s)
  Enta Yoshiharu、Masuda Yusuke、Akimoto Kyota
- Journal Title
  
  Surface Science
  
  Volume: 719 Pages: 122029-122029
- DOI
  10.1016/j.susc.2022.122029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K03694
[Journal Article] Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition2022
- Author(s)
  Sasaki Yuya、Osanai Hiroya、Ohtani Yusuke、Murono Yuta、Sato Masayoshi、Kobayashi Yasuyuki、Enta Yoshiharu、Suzuki Yushi、Nakazawa Hideki
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 123 Pages: 108878-108878
- DOI
  10.1016/j.diamond.2022.108878
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K03694, KAKENHI-PROJECT-21K04858
[Journal Article] Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen2022
- Author(s)
  Nakazawa Hideki、Nakamura Kazuki、Osanai Hiroya、Sasaki Yuya、Koriyama Haruto、Kobayashi Yasuyuki、Enta Yoshiharu、Suzuki Yushi、Suemitsu Maki
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 122 Pages: 108809-108809
- DOI
  10.1016/j.diamond.2021.108809
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K03694, KAKENHI-PROJECT-21K04858
[Journal Article] Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films2022
- Author(s)
  Osanai Hiroya、Nakamura Kazuki、Sasaki Yuya、Koriyama Haruto、Kobayashi Yasuyuki、Enta Yoshiharu、Suzuki Yushi、Suemitsu Maki、Nakazawa Hideki
- Journal Title
  
  Thin Solid Films
  
  Volume: 745 Pages: 139100-139100
- DOI
  10.1016/j.tsf.2022.139100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K03694, KAKENHI-PROJECT-21K04858
[Journal Article] Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition2021
- Author(s)
  Nakamura K.、Ohashi H.、Enta Y.、Kobayashi Y.、Suzuki Y.、Suemitsu M.、Nakazawa H.
- Journal Title
  
  Thin Solid Films
  
  Volume: 736 Pages: 138923-138923
- DOI
  10.1016/j.tsf.2021.138923
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K03694
[Journal Article] Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon2019
- Author(s)
  Narita Syunki、Nara Yuki、Enta Yoshiharu、Nakazawa Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SI Pages: SIIA16-SIIA16
- DOI
  10.7567/1347-4065/ab2536
- NAID
  210000156707
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K03694
[Journal Article] Activation Energy of Thermal Desorption of Silicon Oxide Layers on Silicon Substrates2017
- Author(s)
  Yoshiharu Enta, Shodai Osanai, Takahito Ogasawara
- Journal Title
  
  Surface Science
  
  Volume: 656 Pages: 96-100
- DOI
  10.1016/j.susc.2016.10.007
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition2017
- Author(s)
  Nakazawa Hideki、Magara Kohei、Takami Takahiro、Ogasawara Haruka、Enta Yoshiharu、Suzuki Yushi
- Journal Title
  
  Thin Solid Films
  
  Volume: 636 Pages: 177-182
- DOI
  10.1016/j.tsf.2017.05.046
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04618, KAKENHI-PROJECT-15K06432
[Journal Article] Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas2017
- Author(s)
  Yoshiharu Enta, Makoto Wada, Mariko Arita, Takahiro Takami
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 印刷中 Pages: 63-67
- DOI
  10.1016/j.mssp.2016.10.025
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Angle-Resolved and Resonant Photoemission Study of the Valence Bands of α-La(0001) on W(110)2016
- Author(s)
  Yoshiharu Enta, Osamu Morimoto, Hiroo Kato, Yasuo Sakisaka
- Journal Title
  
  World Journal of Condensed Matter Physics
  
  Volume: 6 Issue: 01 Pages: 17-26
- DOI
  10.4236/wjcmp.2016.61003
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Interfacial Structure of Oxynitride Layer on Si(100) with Plasma-Excited N2O2016
- Author(s)
  Y. Enta
- Journal Title
  
  International Journal of Applied and Natural Sciences
  
  Volume: 5-1 Pages: 63-68
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Structural and electrical properties and current-voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition2016
- Author(s)
  Masato Tsuchiya, Kazuki Murakami, Kohei Magara, Kazuki Nakamura, Haruka Ohashi, Kengo Tokuda, Takahiro Takami, Haruka Ogasawara, Yoshiharu Enta, Yushi Suzuki, Satoshi Ando, and Hideki Nakazawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 6 Pages: 065502-065502
- DOI
  10.7567/jjap.55.065502
- NAID
  210000146590
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates2016
- Author(s)
  S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 460 Pages: 27-36
- DOI
  10.1016/j.jcrysgro.2016.12.068
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Ring structures formed inside voids in SiO2 layer on Si(100) during thermal decomposition2016
- Author(s)
  Yoshiharu Enta, Shodai Osanai, Taichi Yoshida
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 2 Pages: 028004-028004
- DOI
  10.7567/jjap.55.028004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition2016
- Author(s)
  Hideki Nakazawa, Saori Okuno, Kohei Magara, Kazuki Nakamura, Soushi Miura, Yoshiharu Enta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 1255011-9
- DOI
  10.7567/jjap.55.125501
- NAID
  210000147302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04618, KAKENHI-PROJECT-15K06432
[Journal Article] シリコン酸窒化膜の内殻準位異常シフトに対する表面吸着種の影響2015
- Author(s)
  高見貴弘、和田誠、遠田義晴
- Journal Title
  
  電子情報通信学会技術研究報告書
  
  Volume: 115-179 Pages: 71-74
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Dry-Oxidation Rate of Si(100) Surface up to 2 nm-Oxide Thickness2015
- Author(s)
  Y. Enta, M. Arita, M. Wada
- Journal Title
  
  International Journal of Applied and Natural Sciences
  
  Volume: 4-6 Pages: 51-56
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K04618
[Journal Article] Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition2012
- Author(s)
  H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T. Abe
- Journal Title
  
  apanese Journal of Applied Physics
  
  Volume: 51 Pages: 15603-15603
- NAID
  40019137978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Initial thermal oxidation of Si(100) investigated by Si 2p core-level photoemission2011
- Author(s)
  Y.Enta
- Journal Title
  
  Photon Factory Activity Report 2010
  
  Volume: 28B Pages: 57-57
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si2011
- Author(s)
  Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, and Maki Suemitsu
- Journal Title
  
  Appled Phsics Express
  
  Volume: 4巻
- NAID
  10030153776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si2011
- Author(s)
  Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu
- Journal Title
  
  Appled Phsics Express
  
  Volume: 4
- NAID
  10030153776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] シリコン酸化膜の不均一な熱分解2011
- Author(s)
  遠田義晴, 小川可乃, 永井孝幸
- Journal Title
  
  電子情報通信学会技術研究報告書
  
  Volume: 111巻 Pages: 61-64
- NAID
  110008801099
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] シリコン酸化膜の不均一な熱分解2011
- Author(s)
  遠田義晴
- Journal Title
  
  電子情報通信学会技術研究報告書
  
  Volume: 111 Pages: 61-64
- NAID
  110008801099
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface2011
- Author(s)
  K. Imaizumi, H. Hanada, R. Takahashi, E. Saito, H. Fukidome, Y. Enta, Y. Teraoka, A. Yoshigoe, M. Suemitsu
- Journal Title
  
  apanese Journal of Applied Physics
  
  Volume: 50 Pages: 70105-70105
- NAID
  210000070788
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si2011
- Author(s)
  H. Fukidome, S. Abe, R. Takahashi, K. Imaizumi, S. Inomata, H. Handa, E. Saito, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita, S. Ito, M. Suemitsu
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Pages: 115104-115104
- NAID
  10030153776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Control of Epitaxy of Graphene by Crystallographic Orientation of Si Substrate toward Device Applications2011
- Author(s)
  H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H.-C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, M. Suemitsu, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita
- Journal Title
  
  Journal of Materials Chemistry
  
  Volume: 21 Pages: 17242-17248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure2010
- Author(s)
  H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 19 Pages: 1387-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission2010
- Author(s)
  Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 235 Pages: 12008-12008
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission2010
- Author(s)
  Y. Enta, H. Nakazawa, S. Sato, H. Kato, and Y. Sakisaka
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 235巻 Pages: 12008-12013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission2010
- Author(s)
  Y.Enta, H.Nakazawa, S.Sato, H.Kato, Y.Sakisaka
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 235 Pages: 12008-12013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission2010
- Author(s)
  Y.Enta
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 235 Pages: 12008-12008
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition2009
- Author(s)
  H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 48 Pages: 116002-116002
- NAID
  40016844227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Journal Article] Epitaxial of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
- Author(s)
  T.Ide, Y. Kawai, H. Handa, H. Fukidome, M. Kotsugi, T. Ohkochi, Y. Enta, T. Kinoshita, A.Yoshigoe, Y. Teraoka, M. Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: (印刷中)
- NAID
  210000140718
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] 4H-SiC(0001)-Si面およびC面上SiO2薄膜の真空熱脱離2022
- Author(s)
  佐藤聖能、室野優太、喜多直人、遠田義晴
- Organizer
  令和３年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 青色Zr系金属ガラスの深さ元素分析による高濃度Cu層の存在2022
- Author(s)
  増田悠右、工藤竜太、遠田義晴、富樫望
- Organizer
  令和３年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] プラズマ化学気相成長法により作製したSiおよびN添加DLC膜特性への水素およびAr希釈の効果2021
- Author(s)
  佐々木祐弥、長内公哉、大谷優介、室野優太、佐藤聖能、小林康之、遠田義晴、鈴木裕史、中澤日出樹
- Organizer
  第８２回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 電子線照射によるシリコン酸化膜の還元に伴う表面変形2021
- Author(s)
  秋元恭汰、藤森敬典、遠田義晴
- Organizer
  第６８回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] SiC基板表面の低温熱酸化：面方位による酸素圧力依存性の差異2021
- Author(s)
  室野優太、佐藤聖能、郡山春人、遠田義晴
- Organizer
  第８２回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] ポストアニールが窒素添加水素化DLC膜の機械的・光学的・電気的特性に及ぼす影響2021
- Author(s)
  長内公哉、室野優太、佐藤聖能、小林康之、遠田義晴、鈴木裕史、中澤日出樹
- Organizer
  第３４回ダイヤモンドシンポジウム
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] Annealing Effects on the Properties of Hydrogenated Diamond-Like Carbon Films Doped with Silicon and Nitrogen2021
- Author(s)
  H. Nakazawa, K. Nakamura, H. Osanai, H. Koriyama, Y. Kobayashi, Y. Enta, Y. Suzuki, M. Suemitsu
- Organizer
  14th International Conference on New Diamond and Nano Carbons 2020/2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] SiC基板表面の低温熱酸化速度―酸化圧力依存性―2021
- Author(s)
  室野優太、佐藤聖能、郡山春人、遠田義晴
- Organizer
  第６８回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] シリコン酸化膜の電子線照射による還元に伴う表面変形の照射条件依存性2021
- Author(s)
  秋元恭汰、藤森敬典、遠田義晴
- Organizer
  第８２回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] プラズマ化学気相成長法によるSi及びN添加ダイヤモンドライクカーボン膜の光学的特性および電気的特性に及ぼすH2及びAr希釈の効果2021
- Author(s)
  佐々木祐弥、長内公哉、大谷優介、室野優太、佐藤聖能、小林康之、遠田義晴、鈴木裕史、中澤日出樹
- Organizer
  電子情報通信学会　電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] Influence of Hydrogen Gas Flow Ratio on the Properties of Silicon and Nitrogen Doped Diamond-Like Carbon Films by Plasma-Enhanced Chemical Vapor Deposition2021
- Author(s)
  H. Osanai, Y. Sasaki, Y. Ohtani, Y. Murono, M. Sato, Y. Kobayashi, Y. Enta, Y. Suzuki, H. Nakazawa
- Organizer
  14th International Conference on New Diamond and Nano Carbons 2020/2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] シリコン酸化膜の電子線照射による還元反応と微細構造形成2020
- Author(s)
  藤森敬典、増田悠右、遠田義晴
- Organizer
  令和元年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 窒素添加ダイヤモンドライクカーボン膜特性へのポストアニール効果2020
- Author(s)
  長内公哉、中村和樹、郡山春人、小林康之、遠田義晴、鈴木裕史、中澤日出樹
- Organizer
  ２０２０年日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 走査型オージェ電子顕微鏡によるZr系金属ガラス表面の腐食2020
- Author(s)
  小野大樹、遠田義晴、富樫望
- Organizer
  令和元年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 4H-SiC基板の低温熱酸化2020
- Author(s)
  郡山春人、室野優太、遠田義晴
- Organizer
  令和元年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 窒素添加DLC膜特性へのアニール効果2020
- Author(s)
  長内公哉、中村和樹、郡山春人、小林康之、遠田義晴、鈴木裕史、中澤日出樹
- Organizer
  令和元年度日本表面真空学会東北・北海道支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] ポストアニールが窒素添加DLC膜特性に及ぼす効果2020
- Author(s)
  長内公哉、中村和樹、小林康之、遠田義晴、鈴木裕史、末光眞希、中澤日出樹
- Organizer
  第６７回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 1000℃以下でのSiC表面の熱酸化速度2020
- Author(s)
  室野優太、郡山春人、遠田義晴
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 電子線照射熱反応によるシリコン酸化膜の局所的分解反応2020
- Author(s)
  秋元恭汰、藤森敬典、遠田義晴
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] Si基板上SiO2薄膜の電子線照射による還元反応：還元過程の時間発展2019
- Author(s)
  藤森敬典、千田陽介、増田悠右、氏家夏樹、遠田義晴
- Organizer
  第８０回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 4H-SiC表面の低温熱酸化：Si面とC面の差異2019
- Author(s)
  郡山春人、遠田義晴
- Organizer
  第８０回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 窒素を添加したDLC膜特性へのアニール効果2019
- Author(s)
  長内公哉、中村和樹、郡山春人、小林康之、遠田義晴、鈴木裕史、末光眞希、中澤日出樹
- Organizer
  電子情報通信学会　電子部品・材料研究会
- Data Source
  KAKENHI-PROJECT-19K03694
[Presentation] 電子線照射によるSiO2/Si界面反応2018
- Author(s)
  遠田義晴
- Organizer
  半導体薄膜高額の過去・現在・未来　－ICT社会の将来を見据えて－
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 室温電子線照射によるSiO2膜／Si基板界面でのSi微細構造形成2018
- Author(s)
  遠田　義晴，増田　悠右，千田　陽介
- Organizer
  第６５回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] Effects of nitrogen doping on the chemical bonding states and properties of silicon-doped diamond-like carbon films2017
- Author(s)
  Kazuki Nakamura, Haruka Ohashi, Tai Yokoyama, Kei-ichiro Tajima, Norifumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Hideki Nakazawa
- Organizer
  The 8th International Symposium on Surface Science（ISSS-8）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] Effects of Organic-Compounds Doses on Silicon Fine Structures Formed in Voids on Silicon Dioxide Layers by Annealing in Vacuum2017
- Author(s)
  Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa
- Organizer
  The 8th International Symposium on Surface Science（ISSS-8）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 真空蒸着と低温アニールによるBi媒介Geナノドット形成-２2017
- Author(s)
  対馬和都, 滝田健介, 中澤日出樹, 遠田義晴, 俵毅彦, 舘野功太, 章国強, 後藤秀樹, 岡本浩
- Organizer
  第６４回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン基板上シリコン酸化膜の電子線照射による還元反応2017
- Author(s)
  増田悠右、遠田義晴
- Organizer
  第７８回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価2017
- Author(s)
  滝田健介，対馬和都, 遠田義晴, 俵毅彦，舘野功太，章国強，後藤秀樹，岡本浩
- Organizer
  平成29年度電気関係学会東北支部連合大会
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 真空蒸着と低温アニールによるBi媒介Geナノドット形成-１2017
- Author(s)
  滝田健介, 対馬和都, 遠田義晴, 俵毅彦, 舘野功太, 章国強, 後藤秀樹, 池田高之, 水野誠一郎, 岡本浩
- Organizer
  第６４回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 水素原子を用いた3C-SiC/Si基板上へのグラフェンの低温形成2017
- Author(s)
  荒畑宏樹、成田克、遠藤則史、末光眞希、遠田義晴、中澤日出樹
- Organizer
  第７８回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価2017
- Author(s)
  滝田健介，対馬和都, 遠田義晴, 俵毅彦，舘野功太，章国強，後藤秀樹，岡本浩
- Organizer
  平成29年度電気関係学会東北支部連合大会
- Data Source
  KAKENHI-PROJECT-17K06338
[Presentation] 希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加 DLC 薄膜の作製と評価2017
- Author(s)
  中村和樹，大橋遼, 横山大, 田島圭一郎,　遠藤則史, 末光眞希, 遠田義晴, 小林康之, 中澤日出樹
- Organizer
  応用物理学会第７２回東北支部学術講演会
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] Electron Beam Irradiation Effects on SiO2 Layer on Silicon Substrate at Room Temperature2017
- Author(s)
  Yusuke Masuda, Yoshiharu Enta
- Organizer
  The 8th International Symposium on Surface Science（ISSS-8）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果2016
- Author(s)
  中村和樹，大橋遼, 横山大, 田島圭一郎,　遠藤則史, 末光眞希, 遠田義晴, 中澤日出樹
- Organizer
  応用物理学会第７１回東北支部学術講演会
- Place of Presentation
  東北大学
- Year and Date
  2016-12-01
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas2016
- Author(s)
  Yoshiharu Enta, Makoto Wada, Mariko Arita, and Takahiro Takami
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces ISCSI-VII: International SiGe Technology and Device Meeting ISTDM 2016
- Place of Presentation
  名古屋大学
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果2016
- Author(s)
  中村和樹,　大橋遼, 横山大, 田島圭一郎,　遠藤則史, 末光眞希, 遠田義晴, 中澤日出樹
- Organizer
  第７７回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン酸化膜熱脱離によるボイド内リング構造形成の雰囲気依存性2016
- Author(s)
  遠田義晴，長内翔大，小笠原崇仁
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 希釈ガスに水素ガスを用いたプラズマCVD法によるN添加およびSi/N共添加DLC膜の特性比較2016
- Author(s)
  中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹
- Organizer
  第30回ダイヤモンドシンポジウム
- Place of Presentation
  東京大学
- Year and Date
  2016-11-16
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加ダイヤモンドライクカーボンの膜特性2016
- Author(s)
  中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹
- Organizer
  2016年真空・表面科学合同講演会第36回表面科学学術講演会第57回真空に関する連合講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] Silicon Fine Structures Formed by Thermal Desorption of Silicon Dioxide Layer in Vacuum2016
- Author(s)
  Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa
- Organizer
  Asian Conference on Nanoscience and Nanotechnology 2016
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2016-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン酸窒化膜内殻準位異常シフトの解析2015
- Author(s)
  高見貴弘，和田誠，遠田義晴
- Organizer
  応用物理学会第７０回東北支部学術講演会
- Place of Presentation
  ホテルアップルランド
- Year and Date
  2015-12-03
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン酸化膜のボイド状熱脱離とボイド内微細構造2015
- Author(s)
  遠田義晴，永井孝幸，吉田太祐，長内翔大，小笠原崇仁
- Organizer
  応用物理学会第７０回東北支部学術講演会
- Place of Presentation
  ホテルアップルランド
- Year and Date
  2015-12-03
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン酸窒化膜の内殻準位異常シフトに対する表面吸着種の影響2015
- Author(s)
  高見貴弘，和田誠，遠田義晴
- Organizer
  電子情報通信学会　電子部品・材料研究会
- Place of Presentation
  弘前大学
- Year and Date
  2015-08-10
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] 気相熱励起N2Oガスを用いたシリコン熱酸窒化反応2015
- Author(s)
  高見貴弘，遠田義晴
- Organizer
  第７６回応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K04618
[Presentation] シリコン酸化膜の不均一な熱分解2011
- Author(s)
  遠田義晴
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  弘前大学
- Year and Date
  2011-08-11
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] シリコン基板上SiO2膜の熱分解によるボイド形成2011
- Author(s)
  遠田義晴
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] シリコン酸化膜のSi 2p光イオン化断面積2011
- Author(s)
  遠田義晴
- Organizer
  第24回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-01-10
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] シリコン基板上SiO2膜の熱分解によるボイド形成2011
- Author(s)
  遠田義晴
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] シリコン酸化膜の不均一な熱分解2011
- Author(s)
  遠田義晴
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  弘前大学(青森県)
- Year and Date
  2011-08-11
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] シリコン酸化膜のSi 2p光イオン化断面積2011
- Author(s)
  遠田義晴
- Organizer
  第24回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  つくば国際会議場(茨城県)
- Year and Date
  2011-01-10
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] 酸化膜厚2nmまでのシリコン急速初期酸化2010
- Author(s)
  遠田義晴
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE2010
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
- Organizer
  2nd International Symposium on Graphene Devices
- Place of Presentation
  仙台
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] 酸化膜厚2nmまでのシリコン急速初期酸化2010
- Author(s)
  遠田義晴
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] Nanoscale Control of Structure of Epitaxial Graphene by Using Substrate Microfabrication2010
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
- Organizer
  2nd International Symposium on Graphene Devices
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate2010
- Author(s)
  H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe, T. Kinoshita
- Organizer
  23rd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  福岡
- Year and Date
  2010-11-09
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Silicon thermal oxidation and its thermal desorption investigated by Si2p core-level photoemission2009
- Author(s)
  Y.Enta
- Organizer
  International Workshop on Electronic Spectroscopy for Gas-phase Molecules and Solid Surfaces
- Place of Presentation
  Hotel Taikansou (宮城県)
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-21560321
[Presentation] Chemical Composition of Ge(Si)Islands on Si(100)substrate capped with Si2009
- Author(s)
  A.Arnold, Y.Enta, M.Suemitsu, M.Kotsugi, T.Ohkochi, T.Kinoshita, Y.Watanabe
- Organizer
  IWES2009
- Place of Presentation
  松島
- Year and Date
  2009-10-11
- Data Source
  KAKENHI-PROJECT-20656007
[Presentation] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission2009
- Author(s)
  Y. Enta
- Organizer
  International Workshop on Electronic Spectroscopy for Gas-phase Molecules and Solid Surfaces
- Place of Presentation
  宮城県松島町ホテル大観荘
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-21560321

1. HIWANO Michio (20134075)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
2. SUEMITSU Maki (00134057)

# of Collaborated Projects: 6 results

# of Collaborated Products: 6 results
3. MIYAMOTO Nobuo (00006222)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. Okamoto Hiroshi (00513342)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
5. FUKIDOME Hirokazu (10342841)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
6. SAKISAKA Yasuo (80108977)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
7. KAMAKURA Nozomu (50323118)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KIMURA Yasuo (40312673)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 三村秀典 (90144055)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 朝岡秀人 (40370340)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 加藤博雄 (20152738)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 手塚泰久 (20236970)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 高桑雄二 (20154768)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 庄子大生 (30312672)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 伊高健治 (40422399)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Enta Yoshiharu 遠田 義晴

ENTA YOSHIHARU 遠田 義晴

ENTA Yoshiharu 遠田 義春

Research Projects

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Co-Researchers

複合励起分子を用いた炭化ケイ素表面絶縁膜のリアルタイム反応制御と高品質化Principal Investigator

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Quantum-dots formation in a buried interface by external-electron-energy injectionPrincipal Investigator

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Formation and reaction control of silicon nanostructures by vacuum thermal decompositionPrincipal Investigator

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Reaction mechanism of nano-scale silicon-insulator thin films by real-time observationPrincipal Investigator

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リアルタイム光電子分光法によるシリコン熱酸化過程の研究Principal Investigator

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リアルタイム光電子分光による半導体表面準位の新解析法Principal Investigator

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Enta Yoshiharu 遠田義晴

ENTA YOSHIHARU 遠田義晴

ENTA Yoshiharu 遠田義春