• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Honda Tohru  本田 徹

ORCIDConnect your ORCID iD *help
… Alternative Names

HONDA Tooru  本田 徹

HONDA Tohru  本田 徹

Less
Researcher Number 20251671
Other IDs
External Links
Affiliation (Current) 2025: 工学院大学, 先進工学部, 教授
Affiliation (based on the past Project Information) *help 2025: 工学院大学, 先進工学部, 教授
2016: 工学院大学, 工学部, 教授
2015: 工学院大学, 公私立大学の部局等, 教授
2013 – 2014: 工学院大学, 工学部, 教授
2006 – 2011: 工学院大学, 工学部, 教授 … More
2005 – 2006: 工学院大学, 工学部, 助教授
2000 – 2003: Kogakuin University, Electronic Engineering, Assistant Professor, 工学部, 助教授
1997 – 1999: 工学院大学, 工学部, 講師
1994 – 1996: 東京工業大学, 精密工学研究所, 助手 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Basic Section 21060:Electron device and electronic equipment-related
Except Principal Investigator
電子デバイス・機器工学 / Science and Engineering / Applied optics/Quantum optical engineering / Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords
Principal Investigator
窒化ガリウム / GaN / 発光ダイオード / MBE / 透明電極 / 集積化 / 面発光 / 分子線エピタキシャル成長 / エレクトロルミネッセンス / 分子線エピタキシー … More / 紫外 / 窒化物 / ホウ素 / 紫外半導体レーザ / 有機金属気相成長法 / 面発光レーザ / x線回折 / X線回折 / 酸化物 / リフトオフ / 結晶成長 / 分子線エピタキシャル成長法 / 3原色発光 / 紫外発光 / 光回路 / 光デバイス / ディスプレイ / 窒化物半導体 / アルミニウム / ショットキー型 / 紫外線発光 / 集積 / 発光素子 / 半導体 / 化合物原料 / 低温成長 / アモルファス / 共振器 / 有機金属気相成長 / 圧電効果 / 量子井戸 / 半導体レーザ / BGaN / 遷移確率 / 格子整合 / 6H-SiC / RHEED / MOMBE / MOVPE / GH-SiC … More
Except Principal Investigator
量子井戸 / 窒化物半導体 / 半導体レーザ / 超格子 / BAlGaN / GaN / エピタキシャル成長 / ワイドギャップ / 深紫外半導体レーザ / Epitaxy Lateral Over Growth / Multilayer Reflector / Current Structure / VCSELs / Blue Semiconductor Lasers / GaInN Semiconductor / 埋め込み成長 / 多層膜反射鏡 / 電流狭窄構造 / 面発光レーザ / 青色半導体レーザ / GaInN半導体 / Light Emitting Diode / Multi Buffer Layer Structure / Residual Strain Control / Optical Device / Deep-UV / 多重バッフア / 残留歪制御 / BAlGaN四元混晶 / 発光ダイオード / 多重バッファ / 残留歪み制御 / 発光デバイス / 紫外域 / Multi buffer layer / Strain control / Optical electrical integrated circuit / Hetero epitaxy / マルチ・バッファ層 / 歪制御 / 光・電子集積回路 / ヘテロ・エピタキシ / Pattern Recognition / Optical Processing / Micro Optics / Planar Microlens / 相互相関 / ポストプロセッサ / Walsh関数マスク / 文字認識 / 光処理 / 微小光学 / 平板マイクロレンズ / MBE / 先端機能デバイス / 半導体物性 / 窒化物 / 酸化物 / 分子線エピタキシー / エビタキシャル成長 / バッファ層 / バッフア層 / 歪み制御 / エピタキシル成長 / ドーピング材料 / p型半導体 / 交互供給法 / AlGaN / 炭素 / p型不純物 / 発振モード / 光学異方性 / 室化物半導体 / 深紫外 / ワイドギヤツプ / 窒化物半導体' / 量子井戸構造 / 深紫外域 Less
  • Research Projects

    (18 results)
  • Research Products

    (362 results)
  • Co-Researchers

    (11 People)
  •  窒化ガリウム系集積化マイクロLEDにおける無効電流低減手法の基礎検討Principal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Kogakuin University
  •  Pioneering development of fundamental technologies for fabrication of wide bandgap III-group oxide/nitride heterostructures

    • Principal Investigator
      Higashiwaki Masataka
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute of Information and Communications Technology
  •  Fabrication processes of GaN-based integrated surface-emitting devices using a chemical liftoff techniquesPrincipal Investigator

    • Principal Investigator
      Honda Tohru
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kogakuin University
  •  Fabrication of planar-type GaN-based surface emitting devicesPrincipal Investigator

    • Principal Investigator
      HONDA Tohru
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kogakuin University
  •  Growth of High Quality AlGaN and its Application to Deep UV LED and LD

    • Principal Investigator
      KAWANISHI Hideo
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Kogakuin University
  •  Fundamental Study on GaN-based Surface emitting devices and their integrationPrincipal Investigator

    • Principal Investigator
      HONDA Tohru
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kogakuin University
  •  Research on Deep-UV Semiconductor Laser Lasing in 205~250nm Region

    • Principal Investigator
      KAWANISHI Hideo
    • Project Period (FY)
      2005 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kogakuin University
  •  Next generation Using GaInN Blue VCSEL for a light source of the DVD with a large capacity

    • Principal Investigator
      SAKAGUCHI Takahiro
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  青・紫外域発光素子用BAlGaInN/GaN系多層膜と量子井戸の形成とデバイス化

    • Principal Investigator
      KAWANISHI Hideo
    • Project Period (FY)
      2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Review Section
      Science and Engineering
    • Research Institution
      Kogakuin University
  •  ホウ素添加したGaN系紫外微小共振器の製作Principal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kogakuin University
  •  青・紫外域発光素子用BAlGaN系多層膜と量子井戸の形成とデバイス化

    • Principal Investigator
      川西 英雄
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Kogakuin University
  •  BAlGaN/AlN High Efficient UV Emitting Devices in 200nm 355nm Region

    • Principal Investigator
      KAWANISHI Hideo
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Kogakuin University
  •  ホウ素を含むGaN系紫外半導体レーザ構造の製作Principal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kogakuin University
  •  Basic investigation of optical electrical integrated circuit adapting extreme environment

    • Principal Investigator
      KAWANISHI Hideo
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Kogakuin University
  •  導電性基板上への選択成長によるGaN系青色面発光レーザ構造の製作Principal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kogakuin University
  •  微小バッファ層を用いる選択有機金属気相成長法によるGaN系面発光レーザPrincipal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Tokyo Institute of Technology
  •  GaN系面発光レーザの基礎設計と有機金属気相成長法による試作Principal Investigator

    • Principal Investigator
      本田 徹
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Tokyo Institute of Technology
  •  A Study of Parallel Micoroptical System for Image

    • Principal Investigator
      IGA Kenichi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Tokyo Institute of Technology

All 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book

  • [Book] 電子デバイスの基礎と応用2011

    • Author(s)
      長谷川文夫, 本田徹
    • Total Pages
      235
    • Publisher
      産業図書出版
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Book] 電子デバイスの基礎と応用2011

    • Author(s)
      長谷川文夫、本田徹
    • Total Pages
      235
    • Publisher
      産業図書出版
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in beta-Ga2O3 single crystals2016

    • Author(s)
      T.Onuma, S.Saito, K.Sasaki, K.Goto, T.Masui, T.Yamaguchi, T.Honda, A.Kuramata, and M.Higashiwaki
    • Journal Title

      Applied Physics Letters

      Volume: 108 Issue: 10 Pages: 1019041-5

    • DOI

      10.1063/1.4943175

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25289093
  • [Journal Article] Spectroscopic ellipsometry studies on β-Ga2O3 films and single crystal2016

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, and M. Higashiwaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202B2-1202B2

    • DOI

      10.7567/jjap.55.1202b2

    • NAID

      210000147262

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Journal Article] Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate2015

    • Author(s)
      M. Sumiya, T. Honda, L. Sang, Y. Nakanon, K. Watanabe and F. Hasegawa
    • Journal Title

      Physics Status Solidi (A)

      Volume: 212 Issue: 5 Pages: 1033-1038

    • DOI

      10.1002/pssa.201431732

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Journal Article] Valence band ordering in beta-Ga2O3 studied by polarized transmittance and reflectance spectroscopy2015

    • Author(s)
      T.Onuma, S.Saito, K.Sasaki, T.Masui, T.Yamaguchi, T.Honda, and M.Higashiwaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 11 Pages: 1126011-5

    • DOI

      10.7567/jjap.54.112601

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25289093
  • [Journal Article] Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions2015

    • Author(s)
      H. Nagai, S. Mita, I. Takano, T. Honda and M. Sato
    • Journal Title

      Materials Letters

      Volume: 141 Pages: 235-237

    • DOI

      10.1016/j.matlet.2014.11.056

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-26810130, KAKENHI-PROJECT-25410204
  • [Journal Article] Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal2015

    • Author(s)
      R. Cusco, N. Domenech-Amador, T. Hatakeyama, T. Yamaguchi, T. Honda and L. Artus
    • Journal Title

      Journal of Applied Physics

      Volume: 117 Issue: 18 Pages: 185706-185706

    • DOI

      10.1063/1.4921060

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Journal Article] Impacts of AlOx formation on emission properties of AlN/GaN heterostructures2015

    • Author(s)
      Takeyoshi Onuma, Yohei Sugiura, Tomohiro Yamaguchi, Tohru Honda, and Masataka Higashiwaki
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 5 Pages: 0524011-3

    • DOI

      10.7567/apex.8.052401

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341
  • [Journal Article] Polarized Raman spectra in β-Ga2O3 single crystals2014

    • Author(s)
      T. Onuma, S. Fujioka, T. Yamaguchi, Y. Itoh, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
    • Journal Title

      Journal of Crystal Growth

      Volume: in press Pages: 330-333

    • DOI

      10.1016/j.jcrysgro.2013.12.061

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071
  • [Journal Article] Cathodoluminescence spectra of Ga-In-O Polycrystalline films fabricated by molecular precursor method2014

    • Author(s)
      尾沼猛儀、山口智広、本田徹他10名
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FF02-05FF02

    • DOI

      10.7567/jjap.53.05ff02

    • NAID

      210000143831

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25390071, KAKENHI-PROJECT-25420341
  • [Journal Article] Formation mechanism of p-type Cu2O thin films via intermediate Cu0 species derived from Cu(II) complex of ethylenediamine-N,N,N'N'-tetraacetic acid2014

    • Author(s)
      Hiroki Nagai, Tatsuya Suzuki, Chiro Mochizuki, Ichiro Takano, Tohru Honda, and Mitsunobu Sato
    • Journal Title

      Science of Advanced Materials

      Volume: 6 Issue: 3 Pages: 603-611

    • DOI

      10.1166/sam.2014.1788

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25410204, KAKENHI-PROJECT-25420341
  • [Journal Article] Growth of crystallized AlOx on AlN/GaN heterostructures by in-situ RF-MBE2014

    • Author(s)
      Yohei Sugiura, Tohru Honda, Masataka Higashiwaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 405 Pages: 64-67

    • DOI

      10.1016/j.jcrysgro.2014.07.055

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25420341
  • [Journal Article] Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE2013

    • Author(s)
      T. Yamaguchi, D. Tajimi, M. Hayashi, T. Igaki, Y. Sugiura and T. Honda
    • Journal Title

      Physica Status Solidi C

      Volume: 11 Issue: 11 Pages: 1549-1552

    • DOI

      10.1002/pssc.201300399

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341, KAKENHI-PROJECT-25706020
  • [Journal Article] Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation2013

    • Author(s)
      T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon and Y. Nanishi
    • Journal Title

      Journal of Crystal Growth

      Volume: 377 Pages: 123-126

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Journal Article] Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals2013

    • Author(s)
      T. Onuma, T. Yamaguchi and T. Honda
    • Journal Title

      Physica Status Solidi C

      Volume: 10 Pages: 869-872

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Journal Article] Fabrication of red, green and blue pixels using integrated GaN-based Schottky-type light-emitting diodes2013

    • Author(s)
      T Honda, T. Yamaguchi, N. Sakai, S. Fujioka and Y. Sugiura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JH12-08JH12

    • DOI

      10.7567/jjap.52.08jh12

    • NAID

      210000142705

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Journal Article] Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals2013

    • Author(s)
      T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
    • Journal Title

      Applied Physcs Letters

      Volume: 103 Issue: 4 Pages: 0419101-3

    • DOI

      10.1063/1.4816759

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25289093, KAKENHI-PROJECT-25390071
  • [Journal Article] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique2012

    • Author(s)
      Tohru Honda, Naoyuki Sakai, Shigetoshi Komiyama, Masato Hayashi and Tatsuhiro Igaki
    • Journal Title

      Physica Status Solidi(C)

      Volume: 9巻 Issue: 3-4 Pages: 778-781

    • DOI

      10.1002/pssc.201100387

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Surface Recombination of hexagonal GaN crystals2011

    • Author(s)
      Takeshi Onuma, Naoyuki Sakai, Takashi Okuhata, Atsushi A. Yamaguchi, and Tohru Honda
    • Journal Title

      Physica Status Solidi(C)

      Volume: 8巻 Issue: 7-8 Pages: 2321-2323

    • DOI

      10.1002/pssc.201001013

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361, KAKENHI-PROJECT-23760021
  • [Journal Article] Photoluminescence and photo reactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method2010

    • Author(s)
      H. Nagai, S. Aoyama, H. Hara, C. Mochizuki, I. Takano, T. Honda and M. Sato
    • Journal Title

      Journal of Materials Science

      Volume: 45巻 Issue: 20 Pages: 5704-5710

    • DOI

      10.1007/s10853-010-4640-z

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method2010

    • Author(s)
      T, Honda, T. Oda, Y. Mashiyama, H. Hara and M. Sato
    • Journal Title

      Physica Status Solidi(C)

      Volume: 7巻 Issue: 10 Pages: 2471-2473

    • DOI

      10.1002/pssc.200983871

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method2010

    • Author(s)
      T.Honda, T.Oda, Y.Mashiyama, H.Hara, M.Sato
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 2471-2473

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] 疑似(111)Al基板上GaN薄膜のRF-MBE成長2010

    • Author(s)
      本田徹, 林才人, 後藤大雅, 井垣辰浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 2010-100 Pages: 11-14

    • NAID

      110008152394

    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Photoluminescence and photo reactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method2010

    • Author(s)
      H.Nagai, S.Aoyama, H.Hara, C.Mochizuki, I.Takano, T.Honda, M.Sato
    • Journal Title

      Journal of Materials Science

      Volume: 45 Pages: 5704-5710

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Formation of AlN layer on(111)Al substrate by ammonia nitridation2009

    • Author(s)
      Tohru Honda, Hiromi Yamamoto, Masashi Sawadaishi, Satoshi Taguchi, Kouki Sasaya
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 1994-1996

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Fabrication of MgZnO films by molecular precursor method andtheir application to UV-transparent electrodes2009

    • Author(s)
      Y. Mashiyama, K. Yoshioka, S. Komiyama, H. Nomura, S. Adachi M. Sato, T. Honda
    • Journal Title

      Physica Status Solidi (c) 6

      Pages: 596-598

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] ショットキー型紫外発光ダイオードを用いたRGB発光素子の製作2009

    • Author(s)
      本田徹, 野崎理, 坂井直之, 野口和之
    • Journal Title

      信学技報 2009-122

      Pages: 69-72

    • NAID

      110007504289

    • Data Source
      KAKENHI-PROJECT-21560361
  • [Journal Article] Fabrication of GaN-based Schottky-type light-emitting diodes for micropixels in flat-panel displays2008

    • Author(s)
      T. Honda, T. Kobayashi, S. Komiyama, Y. Mashiyama, M. Arai and K. Yoshioka
    • Journal Title

      Physica Status Solidi (c) vol.5, no.6

      Pages: 2225-2227

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels2008

    • Author(s)
      M. Arai, K. Sugimoto, S. Egawa, T. Honda
    • Journal Title

      Physica Status Solidi (c) vol.5, no.6

      Pages: 2176-2178

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of AIN films at low temperature by CS-MBE technique2008

    • Author(s)
      T. Honda, K. Watanabe, K. Sugimoto, M. Arai, K. Takeda
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 3026-3028

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Introduction of preheated ammonia during GaN growth on Si by compound-source MBE at low temperature2008

    • Author(s)
      T. Honda, M. Sawadaishi, H. Yamamoto, M. Arai, K. Yoshioka and T. Okuhata
    • Journal Title

      Journal of Crystal Growth vol.310

      Pages: 1781-1784

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Introduction of preheated ammonia during GaN growth on Si bycompound-source MBE at low temperature2008

    • Author(s)
      T. Honda. M. Sawadaishi, H. Yamamoto, M. Arai, K. Yoshioka, T. Okuhata
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 1781-1784

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based Schottky-type light-emitting diodes formicropixels in flat-panel displays2008

    • Author(s)
      T. Honda. T. Kobayashi, SKomiyama, Y. Mashiyama, M. Arai, K. Yoshioka
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2225-2228

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of AlN films at low temperature by CS-MBE technique2008

    • Author(s)
      T. Honda, K. Watanabe, K. Sugimoto, M. Arai and K. Takeda
    • Journal Title

      Physica Status Solidi (c) vol.5, no.9

      Pages: 3026-3028

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy2008

    • Author(s)
      S. Komiyama, K. Noguchi, S. Suzuki, T. Honda
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5214-5216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels2008

    • Author(s)
      M. Arai, K. Sugimoto, S. Egawa, T. Honda
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 2176-2178

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy2007

    • Author(s)
      T. Honda, T. Kobayashi, S. Egawa, M. Sawada, K. Sugimoto and T. Baba
    • Journal Title

      Journal of Crystal Growth vol.300

      Pages: 90-93

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Compound-source molecular beam epitaxy of GaN on Si at low temperature using GaN powder and ammonia as sources2007

    • Author(s)
      T. Honda, M. Sawada, H. Yamamoto and M. Sawadaishi
    • Journal Title

      Mater. Res. Soc. Symp. Proc. 955E, Warrendale, PA

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] ZnO films fabricated by spin coating and their application to UV electroluminescent devices2007

    • Author(s)
      K.Yoshioka, S.Egawa, T.Kobayashi, T.Baba, K.Sugimoto, M.Arai, H.Nomura, M.Sato, T.Honda
    • Journal Title

      Physica Status Solidi (c) Vol.4, no.1

      Pages: 162-165

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] ZnO films fabricated by spin coating and their application to UV electroluminescent devices2007

    • Author(s)
      K. Yoshioka, S. Egawa, T. Kobayashi, T. Baba, K. Sugimoto, M. Arai, H. Nomura, M. Sato and T. Honda
    • Journal Title

      Physica Status Solidi (c) vol.4, no.1

      Pages: 162-165

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices2007

    • Author(s)
      T.Honda, T. Baba, M. Watanabe, T. Okuhata
    • Journal Title

      Physica Status Solidi(a) 204

      Pages: 1982-1986

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy2007

    • Author(s)
      T.Honda, T.Kobayashi, S.Egawa, M.Sawada, K.Sugimoto, T.Baba
    • Journal Title

      Journal of Crystal Growth 300

      Pages: 90-93

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based electroluminescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays2007

    • Author(s)
      K. Sugimoto, S. Egawa, M. Arai and T. Honda
    • Journal Title

      Physica Status Solidi (c) vol.4, no.1

      Pages: 53-56

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE technique2007

    • Author(s)
      T. Honda, S. Egawa, K. Sugimoto and M. Arai
    • Journal Title

      Journal of Crystal Growth vol.301-302

      Pages: 424-428

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based electroluminescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays2007

    • Author(s)
      K.Sugimoto, S.Egawa, M.Arai, T.Honda
    • Journal Title

      Physica Status Solidi (c) Vol.4, no.1

      Pages: 53-56

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources2007

    • Author(s)
      T. Honda, S. Egawa, K. Sugimoto, M. Arai
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 67-70

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays2007

    • Author(s)
      T. Kobayashi, S. Egawa, M. Sawada and T. Honda
    • Journal Title

      Physica Status Solidi (c) vol.4, no.1

      Pages: 61-64

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region2007

    • Author(s)
      T. Honda, T. Kobayashi, S. Komiyama and Y. Mashiyama
    • Journal Title

      Journal of Vacuum Science and Technology B vol.25,no.4

      Pages: 1529-1532

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region2007

    • Author(s)
      T. Honda, T. Kobayashi, S. Komiyama, Y. Mashiyama
    • Journal Title

      Journal of Vacuum Science and Technology B 25

      Pages: 1529-1532

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays2007

    • Author(s)
      T.Kobayashi, S.Egawa, M.Sawada, T.Honda
    • Journal Title

      Physica Status Solidi (c) Vol.4, no.1

      Pages: 61-64

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Integrated light-emitting diodes grown by MOVPE for flat panel displays2007

    • Author(s)
      T. Honda, T. Kobayashi, S. Egawa, M. Sawada, K. Sugimoto and T. Baba
    • Journal Title

      Journal of Crystal Growth vol.298

      Pages: 736-739

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources2007

    • Author(s)
      M. Sawada, M. Sawadaishi, H. Yamamoto, M. Arai and T. Honda
    • Journal Title

      Journal of Crystal Growth vol.301-302

      Pages: 67-70

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Integrated light-emitting diodes grown by MOVPE for flat panel displays2007

    • Author(s)
      T.Honda, T.Kobayashi, S.Egawa, M.Sawada, K.Sugimoto, T.Baba
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 736-739

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices2007

    • Author(s)
      M. Arai, K. Sugimoto, S. Egawa, T. Baba and T. Honda
    • Journal Title

      Physica Status Solidi (c) vol.4, no.5

      Pages: 1719-1722

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices2007

    • Author(s)
      T. Honda, T. Baba, M. Watanabe and T. Okuhata
    • Journal Title

      Physica Status Solidi (a) vol.204, no.6

      Pages: 1982-1986

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy2006

    • Author(s)
      T.Honda, M.Sawada, T.Kobayashi, S.Egawa, Y.Aoki, M.Akiyama, H.Kawanishi
    • Journal Title

      Physics Status Solidi (c) Vol.3, no.6

      Pages: 1870-1873

    • Data Source
      KAKENHI-PROJECT-18560344
  • [Journal Article] Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy2005

    • Author(s)
      N.Obinata, K.Sugimoto, K.Ijima, M.Ishibashi, S.Egawa, T.Honda, H.Kawanishi
    • Journal Title

      Japan.J.Appl.Phys. 44・12

      Pages: 8432-8434

    • NAID

      10016958670

    • Data Source
      KAKENHI-PROJECT-17106005
  • [Presentation] 単斜晶酸化ガリウム結晶における光学遷移過程2017

    • Author(s)
      尾沼 猛儀、齋藤 伸吾、佐々木 公平、後藤 健、増井 建和、山口 智広、本田 徹、倉又 朗人、東脇 正高
    • Organizer
      第64回応用物理学会春季学術講演会 シンポジウム「金属酸化物の結晶物性に迫る」
    • Place of Presentation
      神奈川県横浜市 横浜国際平和会議場(パシフィコ横浜)
    • Year and Date
      2017-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] β-Ga2O3結晶における光学的異方性の解析2017

    • Author(s)
      尾沼 猛儀、山口 智広、本田 徹、佐々木 公平、後藤 健、増井 建和、倉又 朗人、齋藤 伸吾、東脇 正高
    • Organizer
      日本学術振興会161委員会 第98回研究会「ワイドギャップ酸化物半導体β-Ga2O3結晶成長、結晶評価、デバイス応用」
    • Place of Presentation
      滋賀県長浜市 長浜ロイヤルホテル
    • Year and Date
      2017-01-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Optical properties of Ga2O3 films and crystals2017

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
    • Organizer
      Compound Semiconductor Week 2017 (CSW 2017)
    • Place of Presentation
      dbb forum berlin, Berlin, Germany
    • Year and Date
      2017-05-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Observation of exciton-LO-phonon interaction in β-Ga2O3 single crystals2016

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
    • Organizer
      German-Japanese Gallium Oxide Technology Meeting 2016
    • Place of Presentation
      Leibniz Institute for Crystal Growth, Berlin, Germany
    • Year and Date
      2016-09-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Beta-Ga2O3結晶における励起子-LOフォノン相互作用2016

    • Author(s)
      尾沼猛儀、齋藤伸吾、佐々木公平、後藤健、増井建和、山口智広、本田徹、倉又朗人、東脇正高
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京都目黒区東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] (0001)α-Al2O3基板上および(0001)GaNテンプレート上へのIn2O3膜のミストCVD成長2016

    • Author(s)
      小林 拓也, 田沼 圭亮, 山口 智広, 尾沼 猛儀, 本田 徹
    • Organizer
      2016年春季応用物理学会
    • Place of Presentation
      東京工業大学, 東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Valence band structure of monoclinic gallium oxide studied by polarized optical measurements2016

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
    • Place of Presentation
      Hong Kong
    • Year and Date
      2016-02-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Technical issues of GaInN growth with high indium composition for LEDs2016

    • Author(s)
      T. Honda, T. Yamaguchi, and T. Onuma
    • Organizer
      The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
    • Place of Presentation
      Hong Kong
    • Year and Date
      2016-02-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Anisotropic optical constants in β-Ga2O3 single crystal2016

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, A. Kuramata, M. Higashiwaki
    • Organizer
      58th Electronic Materials Conference (EMC 2016)
    • Place of Presentation
      University of Delaware, Newark, Delaware, USA
    • Year and Date
      2016-06-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] 分子プレカーサー法を用いたIn-Ga-Mg-O薄膜製作検討2016

    • Author(s)
      高橋 勇貴, 後藤 良介, 安野 泰平, 尾沼 猛儀, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
    • Organizer
      2016年春季応用物理学会
    • Place of Presentation
      東京工業大学, 東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3結晶における励起子-LOフォノン相互作用2016

    • Author(s)
      尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 後藤 健, 増井 建和, 山口 智広, 本田 徹, 倉又 朗人, 東脇 正高
    • Organizer
      2016年春季応用物理学会
    • Place of Presentation
      東京工業大学, 東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 分子プレカーサー法で製作した銀分散ZnO薄膜の光学的特性2016

    • Author(s)
      高 大地, 尾沼 猛儀, 澁川 貴史, 永井 裕己, 山口 智広, Ja-Soon Jang, 佐藤 光史, 本田 徹
    • Organizer
      2016年春季応用物理学会
    • Place of Presentation
      東京工業大学, 東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3薄膜と単結晶の光学定数の比較2016

    • Author(s)
      尾沼 猛儀、齋藤 伸吾、佐々木 公平、増井 建和、山口 智広、本田 徹、倉又 朗人、東脇 正高
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟県新潟市 朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] ミストCVD法により製作したα-(AlGa)2O3の熱的安定性2015

    • Author(s)
      高橋 幹夫, 畠山 匠, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      2015年秋季応用物理学会
    • Place of Presentation
      名古屋国際会議場, 愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaInN系LED製作へ向けた結晶成長とデバイスプロセス2015

    • Author(s)
      鳴谷建人, 尾沼猛儀、山口智広、本田徹
    • Organizer
      2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      工学院大学, 東京
    • Year and Date
      2015-11-01
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] "Determination of Direct and Indirect Bandgap-energies of beta-Ga2O3 by polarized transmittance and reflectance spectroscopy2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      57th Electronic Materials Conference (EMC-57)
    • Place of Presentation
      The Ohio State University, Columbus, Ohio, USA
    • Year and Date
      2015-06-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2015

    • Author(s)
      T. Yamaguchi, T. Honda, T. Onuma, T. Sasaki, M. Takahasi, T. Araki and Y. Nanishi
    • Organizer
      第25回日本MRS年次大会
    • Place of Presentation
      横浜
    • Year and Date
      2015-12-08
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE法によるGaN上GaInN成長におけるその場X線逆格子マッピング測定2015

    • Author(s)
      澤田 匡崇, 山口 智広, 佐々木 拓生, 鳴谷 建人, 出来 亮太, 尾沼 猛儀, 本田 徹, 高橋 正光, 名西 憓之
    • Organizer
      2015年秋季応用物理学会
    • Place of Presentation
      名古屋国際会議場, 愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Correlation between green fluorescence and impurities on pits formed on surface of InGa2015

    • Author(s)
      N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, M. Sumiya
    • Organizer
      The 5th Asia-Arab Sustainable Energy Forum & 7th Int. Workshop on SSB (5AASEF)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2015-05-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist-CVD Growth of In2O32015

    • Author(s)
      T. Kobayashi, K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth temperature dependence of Ga2O3 growth rate by mist CVD2015

    • Author(s)
      K. Tanuma, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-11-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Correlation between green fluorescent emission and pits formed on surface of GaInN films2015

    • Author(s)
      N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 情報化社会の快適化に向けたGaN系デバイス製作に関する研究2015

    • Author(s)
      磯野大樹, 尾沼猛儀、山口智広、本田徹
    • Organizer
      2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      工学院大学, 東京
    • Year and Date
      2015-11-01
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Study of nitridation conditions of Al layer for GaN growth by RF-MBE2015

    • Author(s)
      Y. Hoshikawa, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      Materials Research Society, 2015 Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2015-12-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth temperature dependence of Ga2O3 and In2O3 growth rates in Mist CVD2015

    • Author(s)
      K. Tanuma, T. Yamaguchi, T. Onuma, and T. Honda
    • Organizer
      Materials Research Society, 2015 Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2015-12-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical Anisotropy in (010) Plane of beta-Ga2O3 Single Crystals2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-11-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Comprehensive study on GaN and InN etching by inductively coupled plasma reactive ion etching2015

    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of alpha-(AlGa)2O3 by mist CVD and evaluation of its thermal stability2015

    • Author(s)
      M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-11-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Inductively coupled plasma reactive ion etching of GaN and InN2015

    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      La Forlet Biwako, Shiga
    • Year and Date
      2015-07-15
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] プラズモンによる青色LEDの高輝度化に向けた研究2015

    • Author(s)
      高大地, 尾沼猛儀、山口智広、本田徹
    • Organizer
      2nd Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      工学院大学, 東京
    • Year and Date
      2015-11-01
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of p-type NiO thin films by molecular precursor method2015

    • Author(s)
      R. Goto, T. Onuma, T. Yamaguchi, H. Nagai, M. Sato, and T. Honda
    • Organizer
      1st International Workshop on Gallium Oxide and Related Materials
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-11-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of ZnO thin film by mist CVD using molecular precursor solution2015

    • Author(s)
      R. Goto, T. Yasuno, H. Nagai, H. Hara, M. Sato, T. Honda
    • Organizer
      Conference on LED and its industrial application ’15 (LEDIA’15)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical anisotropy in (010) plane of beta-Ga2O3 single crystals2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      1st International Workshop on Gallium Oxide and Related Materials (IWGO-1)
    • Place of Presentation
      京都府京都市京都大学桂キャンパス
    • Year and Date
      2015-11-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] α-Ga2O3 and α-(AlGa)2O3 Buffer Layers in Growth of GaN2015

    • Author(s)
      T. Yamaguchi, T. Hatakeyama, K. Tanuma, T. Hirasaki, H. Murakami, T. Onuma and T. Honda
    • Organizer
      11th International Conference On Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of Group-III Oxides by Mist Chemical Vapor Deposition and Discussion on Thier Growth Mechanisms2015

    • Author(s)
      T. Yamaguchi, K. Tanuma, H. Nagai, T. Onuma, T. Honda, and M. Sato
    • Organizer
      22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
    • Place of Presentation
      Windwook, Namibia
    • Year and Date
      2015-08-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Investigation of in-situ X-ray reciprocal space mapping measurements in GaInN growth on GaN by RF-MBE2015

    • Author(s)
      M. Sawada, T. Yamaguchi, T. Sasaki, K. Narutani, R. Deki, T. Onuma, T. Honda, M. Takahashi, and Y. Nanishi
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Defect characterization in GaInN on compressive and strain-free GaN underlying layer2015

    • Author(s)
      N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Yamaguchi, T. Honda, Y. Nakano, and M. Sumiya
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical anisotropy in beta-Ga2O3 crystals grown by melt-growth methods2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      International Conference on Light-Emitting Devices and Thier Industrial Applications ’15 (LEDIA ’15)
    • Place of Presentation
      神奈川県横浜市横浜国際平和会議場(パシフィコ横浜)
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Aluminum growth on sapphire substrate with surface nitridation by RF-MBE2015

    • Author(s)
      Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Yamaguchi, T. Onuma, T. Honda
    • Organizer
      Conference on LED and its industrial application ’15 (LEDIA’15)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical Anisotropy in b-Ga2O3 Crystals Grown by Melt-Growth Methods2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki,
    • Organizer
      Conference on LED and its industrial application ’15 (LEDIA’15)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Impact of nitridation on GaN growth on sapphire with an Al layer as a sacrifice layer by RF-MBE2015

    • Author(s)
      Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of copper thin films using the molecular precursor method2015

    • Author(s)
      H. Nagai, T. Yamaguchi, T. Onuma, I. Takano, T. Honda and M. Sato
    • Organizer
      22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
    • Place of Presentation
      Windwook, Namibia
    • Year and Date
      2015-08-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 誘導結合型プラズマ反応性イオンエッチングによるInN エッチング2015

    • Author(s)
      鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
    • Organizer
      第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学, 宮城
    • Year and Date
      2015-05-09
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth condition dependence of Ga-In-O films by mist-CVD2015

    • Author(s)
      K. Tanuma, R. Goto, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      La Forlet Biwako, Shiga
    • Year and Date
      2015-07-15
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of (Ga, In)2O3-x films on GaN-based LED structures by molecular precursor method for near-UV transparent electrodes2015

    • Author(s)
      T. Honda, H. Nagai, S. Fujioka, R. Goto, T. Onuma, T. Yamaguchi, and M.Sato
    • Organizer
      22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
    • Place of Presentation
      Windwook, Namibia
    • Year and Date
      2015-08-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Study on spontaneous emission in nitride-based LEDs with Ag-nanocrystallites ZnO films fabricated by molecular precursor method2015

    • Author(s)
      T. Onuma, T. Shibukawa, D. Taka, K. Serizawa, E. Adachi, H. Nagai, T. Yamaguchi, J.-S. Jang, M. Sato, and T. Honda
    • Organizer
      22nd International Society of Pure & Applied Coordination Chemistry Symposium (SPACC 22)
    • Place of Presentation
      Windwook, Namibia
    • Year and Date
      2015-08-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Study on the Phase Transition Temperature of α-(AlGa)2O3 Grown by Mist CVD2015

    • Author(s)
      M. Takahashi, T. Hayakeyama, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth mechanisms of InN and its alloys using droplet elimination by radical beam irradiation2015

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma,, T. Honda, Y. Nanishi
    • Organizer
      Energy Materials Nanotechnology meeting (EMN)
    • Place of Presentation
      Phuket, Thailand,
    • Year and Date
      2015-05-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] ICP-RIEによるGaN,GaInN,InNエッチングとGaInN系LED製作への応用2015

    • Author(s)
      鳴谷建人, 山口智広, 荒木努, 名西憓之, 尾沼猛儀, 本田徹
    • Organizer
      第4回結晶工学未来塾
    • Place of Presentation
      東京農工大学, 小金井, 東京
    • Year and Date
      2015-10-29
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Discussion of ZnO based film by mist CVD method using molecular precursor solution2015

    • Author(s)
      R. Goto, K. Tanuma, T. Hatakeyama, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3結晶の(010)面における光学的異方性2015

    • Author(s)
      尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 増井 建和, 山口 智広, 本田 徹, 東脇正高
    • Organizer
      2015年秋季応用物理学会
    • Place of Presentation
      名古屋国際会議場, 愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Correlation between Deep-level Optical Spectroscopy and Cathodoluminescence on Pits Formed on Surface of GaInN Films2015

    • Author(s)
      N. Toyomitsu, Y. Harada, J. Wang, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Y. Nakano, and M.Sumiya
    • Organizer
      11th International Conference On Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] AR-XPS measurement of AlOx/AlN/GaN heterostructures2015

    • Author(s)
      D. Isono, S. Takahashi, Y. Sugiura, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Comprehensive study on inductively coupled plasma reactive ion etching of GaN and InN2015

    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma, and T. Honda
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera, Mexico
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Beta-Ga2O3結晶の(010)面における光学的異方性2015

    • Author(s)
      尾沼猛儀、齋藤伸吾、佐々木公平、増井建和、山口智広、本田徹、東脇正高
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      愛知県名古屋市名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Valence band structure of monoclinic gallium oxide studied by polarized optical measurements2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, K. Goto, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      The Collaborative Conference on Crystal Growth 2015 (3CG 2015)
    • Place of Presentation
      Eaton Hotel, Kowloon, Hong Kong
    • Year and Date
      2015-12-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Fundamental study on growth of α-(AlGa)2O3 alloys by mist CVD-A study on growth rate of α-Al2O3 compared with α-Ga2O32015

    • Author(s)
      M. Takahashi, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
    • Organizer
      Conference on LED and its industrial application ’15 (LEDIA’15)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Thermal stability of alpha-(AlGa)2O3 grown by mist CVD2015

    • Author(s)
      M. Takahashi,T. Hatakeyama,T. Onuma,T. Yamaguchi,and T. Honda
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera, Mexico
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Impact of nitridation on GaN growth on (0001)sapphire with an Al layer as a release layer by RF-MBE2015

    • Author(s)
      Y. Hoshikawa, S. Osawa, Y. Matsumoto, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fundamental Study on Local Surface Plasmons in Ag-nanocrystallites ZnO films toward Future Applications in Nitride-based LEDs2015

    • Author(s)
      D. Taka, T. Onuma, T. Shibukawa, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      The 14th International Symposium on Advanced Technology (ISAT-14)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2015-11-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] MgZnO growth on (0001)sapphire by mist chemical vapor deposition2015

    • Author(s)
      R. Goto, H. Nagai, T. Yamaguchi, T. Onuma, M. Sato and T. Honda,
    • Organizer
      17th International Conference on II-VI Compounds and Related Materials
    • Place of Presentation
      Paris, France
    • Year and Date
      2015-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Determination of Direct and Indirect Bandgap-Energies of beta-Ga2O3 by Polarized Transmittance and Reflectance Spectroscopy2015

    • Author(s)
      T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      57th Electronic Materials Conference (EMC-57)
    • Place of Presentation
      Ohio, USA
    • Year and Date
      2015-06-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Photoelectron spectra of AlN/GaN heterostructure observed by AR-XPS2015

    • Author(s)
      D. Isono, S. Takahashi, Y. Sugiura, T. Yamaguchi, T. Honda
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2015-05-17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ X-ray Reciprocal Space Mapping Measurements in GaInN Growth on GaN by RF-MBE2015

    • Author(s)
      T. Yamaguchi, T. Sasaki, K. Narutani, M. Sawada, R. Deki, T. Onuma, T. Honda, M. Takahasi, and Y. Nanishi
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera, Mexico
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 下地GaN層の歪みの異なるGaInN薄膜表面ピット形成と蛍光特性2014

    • Author(s)
      豊満 直樹, Liwen Sang, Wang Jianyu, 山口 智広, 本田 徹, 角谷 正友
    • Organizer
      第3回応用物理学会結晶工学分科会結晶工学未来塾
    • Place of Presentation
      学習院大学, 豊島区, 東京
    • Year and Date
      2014-11-03
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 分子プリカーサー法で製作したGa-In-O多結晶薄膜の発光特性2014

    • Author(s)
      尾沼猛儀、安野泰平、高野宗一郎、後藤良介、藤岡秀平、畠山匠、原広樹、望月千尋、永井裕己、山口智広、佐藤光史、本田徹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス、神奈川県
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of InGaN alloys using DERI method and fabrication of LED structures2014

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      Energy Materials Nanotechnology open access week (EMN open access week)
    • Place of Presentation
      Chengdu, China
    • Year and Date
      2014-09-24
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of GaN on alpha-Ga2O3 and mist CVD growth of Ga2O3 on GaN2014

    • Author(s)
      T. Honda, T. Yamaguchi, T. Hatakeyama, D. Tajimi and Y. Sugiura
    • Organizer
      SPIE Photonic West 2014 OPTO conference
    • Place of Presentation
      The Moscone Center, San Francisco, California, USA
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist chemical vapor deposition growth of group-III oxides and its growth mechanism2014

    • Author(s)
      T. Yamaguchi, T. Hatakeyama, K. Tanuma, M. Sugimoto, H. Nagai, T. Onuma, M. Sato and T. Honda
    • Organizer
      The Corroborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Phuket, Tailand
    • Year and Date
      2014-11-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 六方晶GaN中に挿入した一分子層InNの構造完全性による影響2014

    • Author(s)
      渡邊 菜月, 多次見 大樹, 尾沼 猛儀, 山口 智広, 本田 徹, 橋本 直樹, 草部 一秀, 王 科, 吉川 明彦
    • Organizer
      第3回応用物理学会結晶工学分科会結晶工学未来塾
    • Place of Presentation
      学習院大学, 豊島区, 東京
    • Year and Date
      2014-11-03
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of GaInN films using DERI method and fabrication of p-n homojunction blue-green light-emitting diodes2014

    • Author(s)
      T. Yamaguchi, K. Narutani, T. Onuma, T. Araki, T. Honda and Y. Nanishi
    • Organizer
      The 6th International Symposium on Functional Materials (ISFM 2014)
    • Place of Presentation
      Singapore
    • Year and Date
      2014-08-07
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Ga2O3基板の光学的特性評価2014

    • Author(s)
      尾沼 猛儀、山口 智広、伊藤 雄三、本田 徹、佐々木 公平、増井 建和、東脇 正高
    • Organizer
      日本学術振興会第162委員会第91回研究会「酸化物材料の最近の進展」
    • Place of Presentation
      東京都品川区京都大学東京オフィス
    • Year and Date
      2014-09-26
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Ga2O3基板の光学特性評価2014

    • Author(s)
      尾沼 猛儀, 山口 智広, 伊藤 雄三, 本田 徹, 佐々木 公平, 増井 建和, 東脇 正高
    • Organizer
      ワイドギャップ半導体光・電子デバイス第162委員会第91回研究会「酸化物材料の最近の進展」
    • Place of Presentation
      京都大学東京オフィス, 品川, 東京
    • Year and Date
      2014-09-26
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN成長2014

    • Author(s)
      大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学, 名古屋市, 愛知
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE法によるGaInN厚膜成長とpnホモ接合型LEDの製作2014

    • Author(s)
      鳴谷 建人, 山口 智広, Ke Wang, 荒木 努, 名西 憓之, Liwen Sang, 角谷 正友, 藤岡 秀平, 尾沼 猛儀, 本田 徹
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学, 名古屋市, 愛知
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes2014

    • Author(s)
      T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
    • Organizer
      International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2014-08-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜形成2013

    • Author(s)
      杉浦洋平、東脇正高、本田徹
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
    • Place of Presentation
      大阪大学銀杏会館、吹田市、大阪府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Chemical fabrication of transparent Cu metal thin film for infrared reflective thin film2013

    • Author(s)
      H. Nagai, T. Okada, T. Honda and M. Sato
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaInNのRF-MBE成長とpnホモ接合型青緑色LEDの製作2013

    • Author(s)
      鳴谷健人、山口智広、Ke Wang, 荒木努、名西やすし、Liwen Sang, 角谷正友、藤岡秀平、尾沼猛儀、本田徹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス、神奈川県
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Influence of native surface oxides on GaN surface band bending2013

    • Author(s)
      R. Amiya, Y. Sugiura, D. Tajimi, T. Yamaguchi and T. Honda
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] ミストCVD法を用いたGaN基板上へのGa2O3成長2013

    • Author(s)
      多次見大樹、奥秋良隆、畠山匠、金子健太郎、藤田静雄、尾沼猛儀、山口智広、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Crystallized AlOx/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy2013

    • Author(s)
      Y. Sugiura, T. Honda, and M. Higashiwaki
    • Organizer
      10th International Conference on Nitride Semiconductors (ICNS-10)
    • Place of Presentation
      Gaylord National Hotel and Convention Center, Washington, D.C., USA
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Characterization of fabricated Ga-In-O films by molecular precursor method and their future application of UV transparent electrodes2013

    • Author(s)
      T. Yasuno, R. Goto, H. Nagai, H. Hara, Y. SUgiura, T. Yamaguchi, M. Sato and T. Honda
    • Organizer
      The 20th International SPACC Symposium
    • Place of Presentation
      Changchun University of Science and Technology, China
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Effects of surface modification on emission property of GaN Schottky diodes2013

    • Author(s)
      S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 表面酸化物のGaN表面フェルミ準位と表面バンド曲がりに及ぼす影響2013

    • Author(s)
      網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaN系ショットキー型発光ダイオードにおける(Al, Ga)Ox/GaN界面準位の影響2013

    • Author(s)
      藤岡秀平、網谷良介、尾沼猛儀、山口智広、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 分子プレカーサー法を用いたIn添加ZnO薄膜の発光特性2013

    • Author(s)
      後藤良介、安野泰平、永井裕己、山口智広、本田徹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス、神奈川県
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ RF-MBE growth of AlOx/AlN/GaN heterostructures2013

    • Author(s)
      Y. Sugiura, T. Yamaguchi, T. Honda, and M. Higashiwaki
    • Organizer
      International Symposium on Compound Semiconductors (ISCS 2013)
    • Place of Presentation
      兵庫県神戸市神戸国際会議場
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] 蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価2013

    • Author(s)
      豊満直樹、Liwen Sang, 山口智広、本田徹、角谷正友
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス、神奈川県
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Characterization of Ga-In-O films fabricated by molecular precursor method2013

    • Author(s)
      T. Yasuno, T. Oda, H. Nagai, H. Hara, Y. Sugiura, T.Yamaguchi, M. Sato and T. Honda
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of InN and related alloys using DERI method toward fabrication of optoelectronic devices2013

    • Author(s)
      T. Yamaguchi, K. Wang, T. Honda, E. Yoon, T. Araki and Y. Nanishi
    • Organizer
      The 2nd International Conference on Advanced Electromaterials
    • Place of Presentation
      ICC jeju, Jeju, Korea
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 表面酸化物によるGaN表面フェルミ準位に及ぼす影響2013

    • Author(s)
      網谷良介、多次見大樹、杉浦洋平、山口智広、本田徹
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
    • Place of Presentation
      大阪大学銀杏会館、吹田市、大阪府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Polarized Raman spectra in β-Ga2O3 crystals2013

    • Author(s)
      T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] beta-Ga2O3結晶における青色発光強度と抵抗率の相関2013

    • Author(s)
      尾沼猛儀、藤岡秀平、山口智広、東脇正高、佐々木公平、増井建和、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ RF-MBEによるる窒化物構造上AlOx薄膜の結晶成長2013

    • Author(s)
      杉浦 洋平、本田 徹、東脇 正高
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪府吹田市大阪大学吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] RF-MBE growth of GaN films on nitridated alpha-Ga2O3 buffer layer2013

    • Author(s)
      T. Yamaguchi, T. Hatakeyama, D. Tajimi, Y. Sugiura, T. Onuma and T. Honda
    • Organizer
      The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of AlOx/AlN/GaN heterostructures2013

    • Author(s)
      杉浦 洋平、山口 智広、本田 徹、東脇 正高
    • Organizer
      32nd Electronic Materials Syposium
    • Place of Presentation
      滋賀県守山市ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Crystallized AlOx/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy2013

    • Author(s)
      Y. Sugiura, T. Honda and M. Higashiwaki
    • Organizer
      The 10th International Conference on Nitride Semiconductors
    • Place of Presentation
      Gaylord Convention Center, Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜成長2013

    • Author(s)
      杉浦洋平、東脇正高、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Effects of (Al, Ga)Ox/GaN interface states on GaN-based Schottky-type light-emitting diodes2013

    • Author(s)
      S. Fujioka, R. Amiya, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The 2nd International Conference on Advanced Electromaterials
    • Place of Presentation
      ICC jeju, Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of GaN films on alpha-Ga2O3/sapphire template2013

    • Author(s)
      T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] The GaN growth on pseudo Al templates by molecular beam epitaxy2013

    • Author(s)
      S. Osawa, T. Hatakeyama, D. Tajimi, T. Yamaguchi and T. Honda
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of GaN/Al heterostructures on 4H-SiC2013

    • Author(s)
      S. Osawa, D. Tajimi, T. Yamaguchi and T. Honda
    • Organizer
      The 2nd International Conference on Advanced Electromaterials
    • Place of Presentation
      ICC jeju, Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 4H-SiC上の疑似Al基板製作と疑似基板上へのGaN RF-MBE成長2013

    • Author(s)
      大澤真弥、多次見大樹、山口智広、本田徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Use of alpha-Ga2O3/alpha-Al2O3 templates in GaN growth2013

    • Author(s)
      T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. SUgiura and T. Honda
    • Organizer
      2013 JSPS-MRS Joint Symposia
    • Place of Presentation
      同志社大学京田辺キャンパス、京都府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Ga2O3 and In2O3 growth by mist CVD2013

    • Author(s)
      K. Tanuma, T. Yamaguchi, T. Hatakeyama, T. Onuma and T. Honda
    • Organizer
      The 12th International Symposium on Advanced Technology
    • Place of Presentation
      Southern Taiwan University of Science and Technology, Tainan, Taiwan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3結晶における青色発光強度と抵抗率の相関2013

    • Author(s)
      尾沼 猛儀、藤岡 秀平、山口 智広、東脇 正高、佐々木 公平、増井 建和、本田 徹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京都府京田辺市同志社大学京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Mist CVD growth of alpha-Ga2O3 on sapphire substrates and RF-MBE growth of GaN on alpha-Ga2O3/sapphire templates2013

    • Author(s)
      T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura, R. Amiya, T. Onuma and T. Honda
    • Organizer
      The 12th International Symposium on Advanced Technology
    • Place of Presentation
      Southern Taiwan University of Science and Technology, Tainan, Taiwan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ RF-MBEによるAlN/GaNヘテロ構造上へのAlOx薄膜成長2013

    • Author(s)
      杉浦 洋平、本田 徹、東脇 正高
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京都府京田辺市同志社大学京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] RF-MBE growth and characterization of GaN films on alpha-Ga2O3/sapphire template2013

    • Author(s)
      T. Hatakeyama, T. Yamaguchi, D. Tajimi, Y. Sugiura and T. Honda
    • Organizer
      The 10th International Conference on Nitride Semiconductors
    • Place of Presentation
      Gaylord Convention Center, Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] ミストCVD法を用いたGa2O3結晶成長における成長速度の温度依存性2013

    • Author(s)
      田沼圭亮、杉本麻由花、畠山匠、尾沼猛儀、山口智広、本田徹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス、神奈川県
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of Ga-In-O films by molecular precursor method and their future application of transparent electrodes2013

    • Author(s)
      T. Yasuno, H. Nagai, H. Hara, Y. Sugiura, T. Yamaguchi, M. Sato and T. Honda
    • Organizer
      The 16th International Conference on II-VI Compounds and Related Materials
    • Place of Presentation
      Nagahama Royal Hotel, Nagahama, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE法による疑似Al基板上へのGaN成長2013

    • Author(s)
      多次見大樹、大澤真弥、山口智広、本田徹
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第5回窒化物成長講演会
    • Place of Presentation
      大阪大学銀杏会館、吹田市、大阪府
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Polarized Raman spectra in beta-Ga2O3 crystals2013

    • Author(s)
      T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Matsui and T. Honda
    • Organizer
      The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of AlOx/AlN/GaN heterostructures2013

    • Author(s)
      Y. SUgiura, T. Yamaguchi, T. Hatakeyama, T. Honda and M. Higashiwaki
    • Organizer
      The 32nd Electromaterials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Impact of the surface modification of the Ga- and N-face n-GaN Schottky diodes with low reverse-bias leakage current2013

    • Author(s)
      T. Honda, T. Yamaguchi, N. Sakai, S. Fujioka, R. Amiya and Y. Sugiura
    • Organizer
      The 10th International Conference on Nitride Semiconductors
    • Place of Presentation
      Gaylord Convention Center, Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE伝による(GaN/AlN)交互供給緩衝層上GaN薄膜のX線回折測定2012

    • Author(s)
      杉浦洋平、井垣辰浩、林才人、多次見大樹、山口智広、本田徹
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 分子プレカーサー法によるZnO系透明電極製作におけるオゾン洗浄の効果2012

    • Author(s)
      安野泰平, 小田拓人, 佐藤光史, 原広樹, 本田徹
    • Organizer
      弟59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 極性・非極性バルクZnO表面におけるCLスペクトルの比較2012

    • Author(s)
      尾沼猛儀、大林亨、山口智広、山口敦史、本田徹
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Al緩衝層を用いた化合物原料MBE法による(0001)4H-SiC上GaN薄膜の製作2012

    • Author(s)
      長瀬赳史、篠原直也、林才人、杉浦洋平、山口智広、本田徹
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Low temperature of GaN on pseudo(111) Al substrates by RF-MBE2012

    • Author(s)
      M. Hayashi, T. Goto, T. Yamaguchi, T. Igaki, and T. Honda
    • Organizer
      Materials Research Society2011Fall Meeting(MRS 2011F)
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] AlおよびAlO_x膜堆積が極性GaNのPL強度にえる影響2012

    • Author(s)
      坂井直之、尾沼猛儀、山口敦史、山口智広、本田徹
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学、東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T. Honda, T. Igaki, Y. Kumagai and A. Kokitu
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
    • Place of Presentation
      San Diego, California, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] In-plane epitaxial relationship of(0001) sapphire grown by compound-source MBE2011

    • Author(s)
      Y. Sugiura, T. Oda, T. Onuma, T. Yamaguchi, and T. Honda
    • Organizer
      Materials Research Society 2011 Fall Meeting(MRS 2011F)
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification2011

    • Author(s)
      T.Honda, N.Sakai, S.Komiyama, M.Hayashi, T.Igaki
    • Organizer
      9th International Conference on Nitride Semicon ductors (ICNS 2011)
    • Place of Presentation
      SECC, Glasgow, Scotland, UK
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] InNおよびGaN成長における原子脱離過程その場観察2011

    • Author(s)
      山口智広、荒木努、本田徹、名西〓之
    • Organizer
      応用物理学会結晶工学分科会主催2011年・年末講演会
    • Place of Presentation
      学習院大学、東京
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 化合物原料MBE法を用いたZnO薄膜の結晶成長とその評価2011

    • Author(s)
      杉浦洋平、小田拓人、小畑聡、芳原義大、尾沼猛儀、山口智広、本田徹
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 化合物原料MBE法によるZnO薄膜の製作検討2011

    • Author(s)
      杉浦洋平, 小田拓人, 小畑聡, 芳原義大, 尾沼猛儀, 本田徹
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学、厚木、神奈川, 26p-BZ-7
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] In situ monitoring techniques by DERI method2011

    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
    • Organizer
      30th Electronic Materials Symposium (EMS-30)
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] X-ray diffraction pattern of ZnO layer grown by compound source MBE2011

    • Author(s)
      R.Amiya, Y.Sugiura, T.Yamaguchi, T.Honda
    • Organizer
      The 10th International Symposium on Advanced Technology (ISAT-10)
    • Place of Presentation
      北京化工大学(BUCT),Peking,China
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] ZnO growth for transparent electrodes by compound-source MBE2011

    • Author(s)
      Y.Sugiura, T.Oda, S.Obata, Y.Yoshihara, T.Onuma, T.Honda
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 極性および非極性GaN表面における表面再結合過程2011

    • Author(s)
      坂井直之、井垣辰浩、尾沼猛儀、山口敦史、山口智広、本田徹
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Recombination dynamics in polar and nonpolar GaN surfaces2011

    • Author(s)
      N.Sakai, T.Igaki, T.Onuma, A.A.Yamaguchi, T.Yamaguchi, T.Honda
    • Organizer
      30th Electronic Materials Symposium (EMS-30)
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-07-09
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] XPS spectra of c-face GaN and ZnO crystals2011

    • Author(s)
      T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Polarity control of MgZnO transparent electrodes by molecular precursor method2011

    • Author(s)
      T.Oda, T.Kizu, H.Hara, Y.Sugiura, M.Sato, T.Honda
    • Organizer
      30th Electronic Materials Symposium (EMS-30)
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN growth on pseudo (111)Al substrates by RF-MBE2011

    • Author(s)
      T.Honda, M.Hayashi, T.Goto, T.Igaki
    • Organizer
      E-MRS ICAM IUMRS 2011 Spring Meeting (E-MRS)
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-09
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface recombination in polar and nonpolar GaN surfaces2011

    • Author(s)
      N.Sakai, T.Onuma, A.A.Yamaguchi, T.Honda
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semicon ductors (APWS 2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T.Honda, T.Igaki, Y.Kumagai, A.Kokitu
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38)
    • Place of Presentation
      San Diego, California, USA, Mo 1220.
    • Year and Date
      2011-01-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN growth on pseudo(111) Al substrates by RF-MBE2011

    • Author(s)
      T. Honda, M. Hayashi, T. Goto and T. Igaki
    • Organizer
      E-MRS ICAM IUMRS2011Spring Meeting(E-MRS)
    • Place of Presentation
      Nice, France
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] XPS spectra of c-face GaN and ZnO crystals2011

    • Author(s)
      Tohru Honda
    • Organizer
      The 10th International Symposium on Advanced Technology (ISAT-10)
    • Place of Presentation
      北京化工大学(BUCT), Peking, China
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method2011

    • Author(s)
      T. Oda, T. Kidu, H. Hara, Y. Sugiura, M. Sato and T. Honda
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
    • Place of Presentation
      San Diego, California, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法による(GaN/AlN)交互供給緩衝層上GaN薄膜成長2011

    • Author(s)
      林才人、井垣辰浩、杉浦洋平、後藤大雅、山口智広、本田徹
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 六方晶GaNとZnOにおける表面再結合の比較2011

    • Author(s)
      尾沼猛儀、坂井直之、井垣辰浩、山口智広、山口敦史、本田徹
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学、山形
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] DERI法によるIn系窒化物半導体の結晶成長2011

    • Author(s)
      山口智広、荒木努、本田徹、名西〓之
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第75回研究会
    • Place of Presentation
      東京工業大学田町インキュベーションセンタ,東京
    • Year and Date
      2011-07-25
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] "Built-in potential along the c-axis in MBE-grown GaN layers observed by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T.Honda, T.Igaki, T.Yamaguchi, Y.Kumagai, A.Koukitu
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      2011-08-14
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Comparative Study of Surface recombination in hexagonal GaN and ZnO surfaces2011

    • Author(s)
      T.Onuma, N.Sakai, T.Igaki, T.Yamaguchi, A.A.Yamaguchi, T.Honda
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      2011-08-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification2011

    • Author(s)
      T. Honda, N. Sakai, S. Komiyama, M. Hayashi and T. Igaki
    • Organizer
      9th International Conference on Nitride Semiconductors(ICNS2011)
    • Place of Presentation
      Glasgow, Scotland, UK
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Comparative Study of Surface recombination in hexagonal GaN and ZnO surfaces2011

    • Author(s)
      T. Onuma, N. Sakai, T. Igaki, T. Yamaguchi, A. A. Yamaguchi and T. Honda
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
    • Place of Presentation
      San Diego, California, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 銀ナノ粒子-チタニアアロイ薄膜の導電性と光電流密度2011

    • Author(s)
      DANIEL Likius Shipwiisho, 永井裕己, 青山宗平, 原広樹, 望月千尋, 鷹野一朗, 本田徹, 佐藤光史
    • Organizer
      日本化学会第91春季年会
    • Place of Presentation
      神奈川大学横浜キャンパス,横浜、神奈川,4D7-21.
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Initial growth monitoring in GaN epitaxial growth on (GaN/AlN) buffer layer by RF-molecular beam epitaxy2011

    • Author(s)
      M.Hayashi, T.Goto, T.Igaki, J.Sugawara, R.Yonezawa, Y.Sugiura, T.Honda
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semicon ductors (APWS 2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Ozone treatment of the substrates for the ZnO deposition by molecular precursor method2011

    • Author(s)
      T. Oda, H. Hara, Y. Sugiura, T. Yasuno, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] (GaN/AlN)多重緩衝層を用いたRF-MBE法によるSi基板上GaN薄膜成長2011

    • Author(s)
      井垣辰浩、林才人、山口智広、本田徹
    • Organizer
      応用物理学会結晶工学分科会主催2011年・年末講演会
    • Place of Presentation
      学習院大学、東京
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法を用いた(GaN/AlN)交互供給緩衝層上GaN薄膜成長2011

    • Author(s)
      林才人, 後藤大雅, 井垣辰浩, 菅原順平, 米澤亮輔, 杉浦洋平, 本田徹
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学、厚木、神奈川, 26p-BZ-7
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Ozone treatment of the substrates for the ZnO deposition by molecular precursor method2011

    • Author(s)
      T.Oda, H.Hara, Y.Sugiura, T.Yasuno, T.Yamaguchi, M.Sato, T.Honda
    • Organizer
      The 10th International Symposium on Advanced Technology (ISAT-10)
    • Place of Presentation
      北京化工大学(BUCT),Peking,China
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] X-ray diffraction pattern of ZnO layer grown by compound source MBE2011

    • Author(s)
      R. Amiya, Y. Sugiura, T. Yamaguchi and T. Honda
    • Organizer
      The 10th International Symposium on Advanced Technology(ISAT-10
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Growths of InN/InGaN Pariodic Structure and Thick InGaN film using dropment elimination process by radical-beam irradiation2011

    • Author(s)
      T. Yamaguchi, T. Araki, T. Honda, E. Yoon and Y. Nanishi
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
    • Place of Presentation
      San Diego, California, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Growths of InN/InGaN Periodic Structure and Thick InGaN film using droplet elimination process by radical-beam irradiation2011

    • Author(s)
      T.Yamaguchi, T.Araki, T.Honda, E.Yoon, Y.Nanishi
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
    • Place of Presentation
      San Diego, California, USA
    • Year and Date
      2011-08-16
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method2011

    • Author(s)
      T.Oda, T.Kidu, H.Hara, Y.Sugiura, M.Sato, T.Honda
    • Organizer
      The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38)
    • Place of Presentation
      San Diego, California, USA, We 1200.
    • Year and Date
      2011-01-19
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Built-in potential along the C-axis in MBE-grown GaN layers observed by angle resolved X-ray photoelectron spectroscopy2011

    • Author(s)
      T. Honda, T. Igaki, T. Yamaguchi, Y. Kumagai and A. Koukitu
    • Organizer
      The 28th North American Conference on Molecular Beam Epitaxy(NAMBE 2011)
    • Place of Presentation
      San Diego, California, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 分子プレカーサー法により形成したp型酸化銅(1)透明薄膜の半導体特性2011

    • Author(s)
      鈴木達也, 永井裕己, 原広樹, 望月千尋, 鷹野一郎, 本田徹, 佐藤光史
    • Organizer
      日本化学会第91春季年会
    • Place of Presentation
      神奈川大学横浜キャンパス, 横浜、神奈川, 4D7-12.
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures2010

    • Author(s)
      T.Goto, M.Hayashi, T.Igaki, S.Taguchi, T.Honda
    • Organizer
      16th International Conference on molecular beam epitaxy (ICMBE 2010).
    • Place of Presentation
      bcc Belriner congress center, Belrin, Germany, P 2.21.
    • Year and Date
      2010-08-23
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] XPS study on(0001) and (000-1) GaN layers on sapphire substrates grown by molecular beam epitaxy2010

    • Author(s)
      T. Honda, K. Noguchi, N. Sakai, S. Taguchi, T. Goto, T. Igaki and M. Hayashi
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Montpellier Convention Center, Montpellier, France
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] The Electrical and optical properties of p-type cuprous oxides transparent thin films by the molecular precursor method2010

    • Author(s)
      T.Suzuki, H.Nagai, C.Mochizuki, H.Hara, I.Takano, T.Honda, M.Sato
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-18.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method2010

    • Author(s)
      T. Oda, H. Hara, C. Mochizuki, M. Sato and T. Honda
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
    • Place of Presentation
      Peking University, Beijing, China
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 小型フラットディスプレイのための窒化ガリウム系集積化発光素子の製作2010

    • Author(s)
      本田徹
    • Organizer
      物質・材料研究機構光学センシング材料グループ研究会
    • Place of Presentation
      物質・材料研究機構, つくば, 茨城県
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 化合物原料MBE法によるGaN/(111)Siの高品質化の検討2010

    • Author(s)
      長瀬赳史, 眼目貴大, 本田徹
    • Organizer
      応用物理学会結晶工学分科会2010年度年末講演会
    • Place of Presentation
      学習院大学, 東京, No.4.
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN epitaxial growth on pseudo Al substrates by RF-MBE2010

    • Author(s)
      M.Hayashi, T.Goto, T.Igaki, J.Sugawara, R.Yonezawa, S.Taguchi, T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-27.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] XPS study on (0001) and (000-1)GaN layers on sapphire substrates grown by molecular beam epitaxy2010

    • Author(s)
      T.Honda, K.Noguchi, N.Sakai, S.Taguchi, T.Goto, T.Igaki, M.Hayashi
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Montpellier Convention Center, Montpellier, France
    • Year and Date
      2010-07-05
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface recombination of hexagonal GaN crystals2010

    • Author(s)
      N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi, T.Honda
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010).
    • Place of Presentation
      Marriott Tampa Waterside Hotel & Marina, Tampa Bay, Florida, USA, GP 1.20.
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Polarity control of MgZnO thin films by molecular precursor method2010

    • Author(s)
      T.Oda, T.Kizu, Y.Sugiura, H.Hara, M.Sato, T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-26.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface recombination of hexagonal GaN crystals2010

    • Author(s)
      N. Sakai, T. Onuma, T. Okuhata, A. A. Yamaguchi and T. Honda
    • Organizer
      The International Workshop on Nitride semiconductors(IWN2010)
    • Place of Presentation
      Tampa Bay, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface recombination mechanism in hexagonal GaN crystals2010

    • Author(s)
      N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi, T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-28.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 化合物原料MBE法によるZnO薄膜の低温堆積検討2010

    • Author(s)
      杉浦洋平、小田拓人、小畑聡、芳原義大、尾沼猛儀、本田徹
    • Organizer
      応用物理学会結晶工学分科会2010年度年末講演会
    • Place of Presentation
      学習院大学, 東京, No.18.
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法によるGaN薄膜成長における極性制御の検討2010

    • Author(s)
      T.Igaki, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, P3-12.
    • Year and Date
      2010-08-10
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Polarity control of(0001) GaN epitaxial layers grown by RF-MBE2010

    • Author(s)
      T. Igaki, M. Hayashi, T. Goto, S. Taguchi and T. Honda
    • Organizer
      The 37th International Symposium on Compound Semiconductors(ISCS2010)
    • Place of Presentation
      Takamatsu Symbol Tower, Kagawa, Japan
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] III-N growth on pseudo Al substrates by MBE at low temperatures2010

    • Author(s)
      M.Hayashi, T.Goto, T.Igaki, S.Taguchi, T.Honda
    • Organizer
      29th Electronic Materials Symposium (EMS-29)
    • Place of Presentation
      Laforet Shuzenji, Izu, Shizuoka, Japan, Th6-12.
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method2010

    • Author(s)
      T.Oda, H.Hara, C.Mochizuki, M.Sato, T.Honda
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010).
    • Place of Presentation
      Peking University, Beijing, China, P16
    • Year and Date
      2010-05-20
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of RGB pixels based on UV Schottky-type LEDs2010

    • Author(s)
      Tohru Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, IL-9
    • Year and Date
      2010-11-05
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 分子プレカーサー法によるp型酸化銅(1)透明薄膜の形成2010

    • Author(s)
      鈴木達也, 永井裕己, 望月千尋, 原広樹, 鷹野一朗, 本田徹, 佐藤光史
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文京キャンパス, 長崎, 14p-NE-1.
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法による擬似Al基板上へのGaN成長2010

    • Author(s)
      M.Hayashi, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, P2-15.
    • Year and Date
      2010-08-10
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法を用いた疑似Al基板上GaN成長2010

    • Author(s)
      林才人, 後藤大雅, 井垣辰浩, 田口悟, 本田徹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文京キャンパス, 長崎, 14a-C-7.
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface Modification of (0001)GaN and its application to RGB pixels based on UV Schottky-type LEDs2010

    • Author(s)
      T.Honda, N.Sakai, T.Nozaki
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010).
    • Place of Presentation
      Peking University, Beijing, China, L-3.
    • Year and Date
      2010-05-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 分子プレカーサー法によるMgZnO薄膜の極性制御2010

    • Author(s)
      小田拓人, 木津拓人, 原広樹, 杉浦洋平, 佐藤光史, 本田徹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文京キャンパス, 長崎, 17a-NE-4.
    • Year and Date
      2010-09-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 疑似(111)Al基板上GaN薄膜のRF-MBE成長2010

    • Author(s)
      本田徹, 林才人, 後藤大雅, 井垣辰浩
    • Organizer
      電子情報通信学会エレクトロニクスソサイエティ, レーザ・量子エレクトロニクス研究会(LQE)11月研究会
    • Place of Presentation
      大阪大学中之島ホール, 大阪, 大阪府
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of c-axis oriented MgZnO films by molecular precursor method2010

    • Author(s)
      T.Oda, T.Kizu, H.Hara, Y.Sugiyama, M.Sato, T.Honda
    • Organizer
      29th Electronic Materials Symposium (EMS-29)
    • Place of Presentation
      Laforet Shuzenji, Izu, Shizuoka, Japan, We2-6.
    • Year and Date
      2010-07-16
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法による擬似Al基板上へのGaN薄膜の低温成長2010

    • Author(s)
      後藤大雅, 林才人, 井垣辰浩, 田口悟, 本田徹
    • Organizer
      東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      東北大学片平さくらホール,仙台,宮城県.
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Light propagation in GaN-based Schottky-type diodes using FDTD method2010

    • Author(s)
      N.Sakai, T.Kobayashi, T.Honda
    • Organizer
      29th Electronic Materials Symposium (EMS-29)
    • Place of Presentation
      Laforet Shuzenji, Izu, Shizuoka, Japan, Th2-4.
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 分子プレーカーサー法によるGa-doped MgZnO薄膜の配向性及び膜厚依存性の検討2010

    • Author(s)
      T.Oda, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, P2-29.
    • Year and Date
      2010-08-10
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures2010

    • Author(s)
      T. Goto, M. Hayashi, T. Igaki, S. Taguchi and T. Honda
    • Organizer
      16th International Conference on molecular beam epitaxy(ICMBE2010)
    • Place of Presentation
      Belrin, Germany
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Fabrication of ZnO layers by compound source molecular beam epitaxy2010

    • Author(s)
      Y.Sugiura, T.Oda, S.Obata, Y.Yoshihara, T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT 9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-25.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] MBE法による交互供給バッファー層を用いたGaN薄膜の製作2010

    • Author(s)
      後藤大雅、林才人、井垣辰浩、菅原順平、米澤亮輔、本田徹
    • Organizer
      応用物理学会結晶工学分科会2010年度年末講演会
    • Place of Presentation
      学習院大学, 東京, No.3.
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Polarity control of (0001)GaN epitaxial layers grown by RF-MBE2010

    • Author(s)
      T.Igaki, M.Hayashi, T.Goto, S.Taguchi, T.Honda
    • Organizer
      The 9th International Symposium on Advanced Technology (ISAT-9)
    • Place of Presentation
      Shinjuku, Tokyo, Japan, P-29.
    • Year and Date
      2010-11-06
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF励起窒素を用いた化合物原料MBE法によるGaN/(111)Siの製作検討2010

    • Author(s)
      長瀬赳史, 眼目貴大, 本田徹
    • Organizer
      東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      東北大学片平さくらホール,仙台,宮城県.
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface analysis of Ga-and N-polar GaN by angle resolved X-ray photoelectron spectroscopy2010

    • Author(s)
      T. Honda, K. Noguchi, Y. Kumagai and A. Koukitu
    • Organizer
      The 37th International Conference on Physics and Chemistry of Semiconductor Interfaces(PCSI37)
    • Place of Presentation
      New Mexico, USA
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN結晶における面方位とフォトルミネッセンスの発光寿命の関係2010

    • Author(s)
      N.Sakai, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, P3-4.
    • Year and Date
      2010-08-10
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] MBE法による交互供給バッッファ層を用いたGaN薄膜の製作検討2010

    • Author(s)
      T.Goto, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, E-2.
    • Year and Date
      2010-08-11
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Polarity control of (0001)GaN epitaxial layers grown by RF-MBE2010

    • Author(s)
      T.Igaki, M.Hayashi, T.Goto, S.Taguchi, T.Honda
    • Organizer
      The 37th International Symposium on Compound Semiconductors (ISCS 2010).
    • Place of Presentation
      Takamatsu Symbol Tower, Kagawa, Japan, FrP-63.
    • Year and Date
      2010-05-31
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] Surface Modification of(0001) GaN and its application to RGB pixels based on UV Schottky-type LEDs2010

    • Author(s)
      T. Honda, N. Sakai and T. Nozaki
    • Organizer
      8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
    • Place of Presentation
      Peking University, Beijing, China
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 化合物原料MBE法によるZnO薄膜の製作検討2010

    • Author(s)
      Y.Sugiura, T.Honda
    • Organizer
      The 33th International Symposium on Optical communications
    • Place of Presentation
      Makuhari, Chiba, Japan, P 1-22.
    • Year and Date
      2010-08-09
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] 36th Conference on the physics and chemistry of semiconductor interfaces (PCSI-36)2009

    • Author(s)
      T. Honda, S. Komiyama, T. Sakka and K. Noguchi
    • Organizer
      Hotel Mar Monte
    • Place of Presentation
      Santa Barbara, CA, U. S. A
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method2009

    • Author(s)
      T.Honda, T.Oda, Y.Mashiyama, H.Hara, M.Sato
    • Organizer
      The 36th International Symposium on Compound Semiconductors
    • Place of Presentation
      University of California Santa Barbara(CA, USA)
    • Year and Date
      2009-08-31
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] GaN系MOS型紫外発光ダイオードの逆方向リーク電流低減の検討2009

    • Author(s)
      野崎理, 小宮山重利, 渡辺謙二, 鈴木翔太, 本田徹
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学, 茨城
    • Year and Date
      2009-04-01
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Tremendous reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modificationusing the aluminum facepack technique2009

    • Author(s)
      T. Honda. S. Komiyama, T. Sakka, K. Noguchi
    • Organizer
      36th Conference on the physics and chemistry of semiconductor interfaces (PCSI-36)
    • Place of Presentation
      Hotel Mar Monte, SantaBarbara, CA, U. S. A
    • Year and Date
      2009-01-12
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] 化合物原料分子線エピタキシー法による(0001)Al_2O_3基板上へのGaN薄膜成長2009

    • Author(s)
      田口悟, 澤田石将士, 相原繁, 後藤大雅, 本田徹
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学, 茨城
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] XPS Spectra of(0001) and (000-1) GaN Surfaces2009

    • Author(s)
      K. Noguchi, T. Nozaki, N. Sakai, Y. Kumagai, A. Koukitu and T. Honda
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-21560361
  • [Presentation] RF-MBE法により成長したAlGaN薄膜を用いた紫外発光MOS-LEDの製作2008

    • Author(s)
      鈴木翔太, 小宮山重利, 奥畠隆嗣, 野口和之, 本田徹
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 愛知
    • Year and Date
      2008-09-05
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] GaN系MOS型紫外発光ダイオードの逆方向電流の低減2008

    • Author(s)
      鈴木翔太, 小宮山重利, 野崎理, 本田徹
    • Organizer
      応用物理学会結晶工学分科会2008年末講演会
    • Place of Presentation
      学習院大学, 東京
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of surface-coated GaN crystallites deposited on Si substrate2008

    • Author(s)
      T. Okuhata, K. Tomioka, M. Sawadaishi, S. Taguchi and T. Honda
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2008
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of AlGaN-based UV MOS LEDs grown by MBE2008

    • Author(s)
      T. Honda. S. Komiyama, S. Suzuki, T. Okuhata
    • Organizer
      35th International Symposium on CompoundSemiconductors (ISCS-2008)
    • Place of Presentation
      Europa-Park, Rust, Germany
    • Year and Date
      2008-09-22
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxy2008

    • Author(s)
      M. Sawadaishi, S. Taguchi, K. Sasaya, T. Honda
    • Organizer
      The 15th International Conference on Molecular Beam Epitaxy (ICMBE-15)
    • Place of Presentation
      UBC, Vancouver, Canada
    • Year and Date
      2008-08-05
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Surface-oxide etching on Al substrates for the formation of AlN2008

    • Author(s)
      S. Taguchi, M. Sawadaishi, K. Sasaya, H. Yamamoto and T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27), Laforet Shuzenji
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] AlO_x表面をコートしたGaN微結晶の製作とカソードルミネッセンスによる評価2008

    • Author(s)
      奥畠隆嗣, 澤田勝, 澤田石将士, 本田徹
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 愛知
    • Year and Date
      2008-09-04
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy2008

    • Author(s)
      S. Komiyama, K. Noguchi, S. Suzuki and T. Honda
    • Organizer
      14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-14)
    • Place of Presentation
      Metz, France, We-P. 69
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of MgZnO Films by Molecular Precursor Method and Its Application to UV-Transparent Electrodes2008

    • Author(s)
      Y. Mashiyama, K. Yoshioka, S. Komiyama, S. Adachi, M. Sato, T. Honda
    • Organizer
      International Symposium on Semiconductor Light Emitting Devices (ISSLED2008)
    • Place of Presentation
      Phoenix, Arizona, USA
    • Year and Date
      2008-04-29
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Formation of AlN layer on (111)Al substrate by ammonia nitridation2008

    • Author(s)
      T. Honda, H. Yamamoto, M. Sawadaishi, S. Taguchi and K. Sasaya
    • Organizer
      Second international Symposium on growth ofIII-Nitrides (ISGN-2), Laforet Shuzenji
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] GaN系MOS型紫外発光ダイオードの逆方向電流の低減2008

    • Author(s)
      本田徹、小宮山重利、増山佳宏、渡邊謙二
    • Organizer
      電子通信情報学会レーザ・量子エレクトロニクス研究会(LQE)
    • Place of Presentation
      名古屋工業大学, 名古屋市
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy2008

    • Author(s)
      S. Komiyama, K. Noguchi, S. Suzuki, T. Honda
    • Organizer
      14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-14)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of Ga-doped MgZnO-based Transparent Electrodes byMolecular Precursor Method for GaN-based UV LED2008

    • Author(s)
      T. Honda. Y. Mashiyama, S. Komiyama, M. Sato
    • Organizer
      Materials Research Society (MRS) 2008 fallmeeting
    • Place of Presentation
      Hynes Convention Center, Boston, USA
    • Year and Date
      2008-12-03
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Absorption loss in GaN-based Schottky-type UV-LEDs2008

    • Author(s)
      K. Noguchi, S. Komiyama and T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] GaN薄膜成長のための表面窒化Al基板製作2008

    • Author(s)
      田口悟, 澤田石将士, 笹谷光基, 山本博美, 本田徹
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 愛札
    • Year and Date
      2008-09-05
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of AlGaN-based UV MOS LEDs grown by MBE2008

    • Author(s)
      T. Honda, S. Komiyama, S. Suzuki and T. Okuhata
    • Organizer
      35th International Symposium on Compound Semiconductors (ISCS-2008), Europa-Park, Rust
    • Place of Presentation
      Germany
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] XPS spectra of GaN layers grown by compound-source MBE with RF-plasma assisted N2 supply2008

    • Author(s)
      T. Sakka, M. Arai, S. Egawa and T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Formation of AIN layer on (111)Al substrate by ammonia nitridation2008

    • Author(s)
      T. Honda, H. Yamamoto, M. Sawadaishi, S. Taguchi andK. Sasaya
    • Organizer
      Second international Symposium on growth of III-Nitrides (ISGN-2)
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Year and Date
      2008-07-08
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of surface-coated GaN crystallites deposited on Si substrate2008

    • Author(s)
      T. Okuhata, K. Tomioka, M. Sawadaishi, S. Taguchi andT. Honda
    • Organizer
      IEEE Nanotechnology Materials and DevicesConference 2008
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2008-10-22
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] 分子プレカーサー法を用いた紫外発光素子のためのGa-doped MgZnO透明電極の製作検討2008

    • Author(s)
      増山佳宏, 吉岡香織, 藤田健太郎, 野村裕久, 佐藤光史, 本田徹
    • Organizer
      応用物理学会結晶工学分科会2008年末講演会
    • Place of Presentation
      学習院大学, 東京
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of Ga-doped MgZnO-based Transparent Electrodes by Molecular Precursor Method for GaN-based UV LED2008

    • Author(s)
      T. Honda, Y. Mashiyama, S. Komiyama and M. Sato
    • Organizer
      Materials Research Society (MRS) 2008 fall meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Insertion of oxide layer to GaN-based Schottky-type UV light-emitting diode2008

    • Author(s)
      Tohru HONDA
    • Organizer
      日独スペインワークショップ
    • Place of Presentation
      プリンス箱根
    • Year and Date
      2008-03-08
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] CS-MBE法による表面窒化したAl基板上へのGaN薄膜の製作2008

    • Author(s)
      田口悟, 澤田石将士, 相原繁, 後藤大雅, 本田徹
    • Organizer
      応用物理学会結晶工学分科会2008年末講演会
    • Place of Presentation
      学習院大学, 東京
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Surface recombination of the GaN crystallites at low temperature2008

    • Author(s)
      T. Okuhata, K. Tomioka, M. Sawada, M. Sawadaishi, andT. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Surface-oxide etching on Al substrates for the formation of AIN2008

    • Author(s)
      S. Taguchi, M. Sawadaishi, K. Sasaya, H. Yamamoto, T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxy2008

    • Author(s)
      M. Sawadaishi, S. Taguchi, K. Sasaya and T. Honda
    • Organizer
      The 15th International Conference on Molecular Beam Epitaxy (ICMBE-15), Vancouver
    • Place of Presentation
      Canada
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] RFラジカル窒素源を用いた化合物原料分子線堆積法による(111)Si基板上へのGaN薄膜の低温堆積2008

    • Author(s)
      眼目貴大, 福島孝司, 澤田石将士, 本田徹
    • Organizer
      応用物理学会結晶工学分科会2008年末講演会
    • Place of Presentation
      学習院大学, 東京
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] XPS spectra of GaN layers grown by compound-source MBE with RF-plasma assisted N_2 supply2008

    • Author(s)
      T. Sakka, M. Arai, S. Egawa, T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Surface recombination of the GaN crystallites at low temperature2008

    • Author(s)
      T. Okuhata, K. Tomioka, M. Sawada, M. Sawadaishi, and T. Honda
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Izu
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Fabrication of MgZnO Films by Molecular Precursor Method and Its Application to UV-Transparent Electrodes2007

    • Author(s)
      Y. Mashiyama, K. Yoshioka, S. Komiyama, S. Adachi, M. Sato and T. Honda
    • Organizer
      International Symposium on Semiconductor Light Emitting Devices (ISSLED2008), Phoenix
    • Place of Presentation
      Arizona, USA
    • Data Source
      KAKENHI-PROJECT-18560344
  • [Presentation] Growth and doping of In-based nitride semiconductors using DERI method

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015)
    • Place of Presentation
      LOTTE Hotel, Jeju, Korea
    • Year and Date
      2015-02-24 – 2015-02-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Influence of Surface Oxides for Band Bending of N-Type GaN

    • Author(s)
      Y. Sugiura, R. Amiya, D. Isono, T. Yamaguchi and T. Honda
    • Organizer
      5th International Symposium on Growth of III-Nitrides (ISGN-5)
    • Place of Presentation
      The Westin, Peachtree Plaza, Atlanta, Georgia, USA
    • Year and Date
      2014-05-18 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性

    • Author(s)
      尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 増井 建和, 山口 智広, 本田 徹, 東脇 正高
    • Organizer
      第62回応用物理学会春季講演会
    • Place of Presentation
      東海大学湘南キャンパス, 秦野, 神奈川
    • Year and Date
      2015-03-11 – 2015-03-15
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys

    • Author(s)
      T. Yamaguchi, K. Tanuma, T. Hatakeyama, T. Onuma and T. Honda
    • Organizer
      he 41st International Symposium on Compound Semiconductor (ISCS 2014)
    • Place of Presentation
      Le Column, Montpellier, France
    • Year and Date
      2014-05-11 – 2014-05-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Characterization of Dark Spots on GaInN Films by Using Fluorescence Microscope and Secondary Ion Mass Spectroscopy

    • Author(s)
      N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-24
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 疑似Al基板上GaN薄膜のフォトルミネッセンス評価

    • Author(s)
      渡邉 悠斗, 大澤 真弥, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌, 北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Progress in InGaN growth by RF-MBE and development to optical device fabrication

    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      SPIE Photonic West 2015
    • Place of Presentation
      The Moscone Center, San Francisco, CA, USA
    • Year and Date
      2015-02-13 – 2015-02-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Impact of perfection on one-monolayer thick InN in hexagonal GaN

    • Author(s)
      N. Watanabe, D. Tajimi, T. Onuma, N. Hashimoto, K. Kusakabe, K. Wang, A. Yoshikawa, T. Yamaguchi and T. Honda
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 分子プレカーサー法によるZnO薄膜製作のための熱処理温度の検討

    • Author(s)
      後藤 良介, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of α-Ga2O3 on α-Al2O3 substrate by mist CVD and growth of GaN on α -Ga2O3 buffer layer by RF-MBE

    • Author(s)
      T. Yamaguchi, T. Hatakeyama, Y. Sugiura, T. Onuma and T. Honda
    • Organizer
      18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
    • Place of Presentation
      High Country conference center Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] In-situ MBE法を用いたAlOx/AlN/GaNヘテロ構造の製作

    • Author(s)
      杉浦 洋平, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Effect of Pseudo Aluminum Templates in RF-MBE Growth of GaN on 4H-SiC

    • Author(s)
      Y. Watanabe, S. Osawa, D. Tajimi, T. Yamaguchi, and T. Honda
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-24
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] AlOx/AlNヘテロ構造の発光特性

    • Author(s)
      尾沼 猛儀, 杉浦 洋平, 山口 智広, 本田 徹, 東脇 正高
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌, 北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth and characterization of Ga-In-O by mist CVD

    • Author(s)
      K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The 13th International Symposium on Advanced Technology (ISAT-13)
    • Place of Presentation
      Danang, Vietnam
    • Year and Date
      2014-11-13 – 2014-11-16
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] ミストCVDによるα-(AlGa)2O3混晶成長の基礎検討- α-Ga2O3と比較したα-Al2O3の成長速度の検討

    • Author(s)
      高橋 幹夫, 畠山 匠, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      第62回応用物理学会春季講演会
    • Place of Presentation
      東海大学湘南キャンパス, 秦野, 神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Properties of near-UV transparent Ga-In-O electrode in GaN-ased MOS-LED

    • Author(s)
      S. Fujioka, T. Yasuno, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
    • Organizer
      10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of copper thin films using the solution based method

    • Author(s)
      H. Nagai, T. Nakano, S. Mita, T. Yamaguchi, I. Takano, T. Honda and M. Sato
    • Organizer
      Third International Conference on Materials Energy and Environments (ICMEE 2014)
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-07-02 – 2014-07-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] X-ray photoelectron spectroscopy of C+, C- and M-GaN surfaces

    • Author(s)
      D. Isono, Y. Sugiura, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes

    • Author(s)
      K. Narutani, T. Yamaguchi, K. Wang, T Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
    • Organizer
      18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
    • Place of Presentation
      High Country conference center Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE法を用いたGaN成長が疑似Al基板に与える影響

    • Author(s)
      大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌, 北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist CVD法を用いて製作したα-Al2O3基板上Ga-In-O薄膜の評価

    • Author(s)
      田沼 圭亮, 畠山 匠, 尾沼 猛儀, 山口 智広, 窪谷 茂幸, 片山 竜二, 松岡 隆志, 本田 徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌, 北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] “Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes

    • Author(s)
      S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 疑似Al基板上に成長したGaN薄膜の特性評価

    • Author(s)
      渡邉 悠斗, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs

    • Author(s)
      T. Yamaguchi, K. Narutani, T. Onuma, T. Honda, T. Araki and Y. Nanishi
    • Organizer
      2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2014-08-04 – 2014-08-06
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Characterization of fluorescence emission of GaInN films

    • Author(s)
      N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Interface reaction between Al and N atoms in GaN growth on Al by RF-MBE

    • Author(s)
      S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist CVD growth of Ga-In-O films grown on α-Al2O3 substrates

    • Author(s)
      K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
    • Organizer
      International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2014-06-10 – 2014-06-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBEによる窒化サファイア基板上アルミニウム薄膜成長

    • Author(s)
      星川 侑也, 大澤 真弥, 松本 雄大, 尾沼 猛儀, 山口 智広, 本田 徹
    • Organizer
      第62回応用物理学会春季講演会
    • Place of Presentation
      東海大学湘南キャンパス, 秦野, 神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaN層のケミカルリフトオフに向けたAlの膜厚検討

    • Author(s)
      大澤 真弥, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] AR-XPS spectra of c-, c+ and m-plane n-GaN crystals

    • Author(s)
      D. Isono, R. Amiya, T. Yamaguchi and T. Honda
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE

    • Author(s)
      T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
    • Place of Presentation
      High Country conference center Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Influence of surface oxides for band bending of n-type GaN

    • Author(s)
      Y. Sugiura, D. Isono, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Raman scattering study of α-Ga2O3 single-crystal films grown by mist CVD

    • Author(s)
      L. Artus, N. Domenech-Amador, R. Cusco, T. Hatakeyama, T. Yamaguchi and T. Honda
    • Organizer
      Materials Research Society 2014 Fall Meeting
    • Place of Presentation
      Hynes Convention Center, Boston, MA, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of Pseudo Aluminum Templates on 4H-SiC and Growth of GaN on Pseudo Aluminum Templates by RF-MBE

    • Author(s)
      Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
    • Organizer
      5th International Symposium on Growth of III-Nitrides (ISGN-5)
    • Place of Presentation
      The Westin, Peachtree Plaza, Atlanta, Georgia, USA
    • Year and Date
      2014-05-18 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaN系MOS-LEDを用いたGa-In-O近紫外透明電極の評価

    • Author(s)
      藤岡 秀平, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Investigation of Ga-In-O films grown on α-Al2O3 substrates by mist CVD

    • Author(s)
      K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Growth of oxide thin films by mist chemical vapor deposition – Application of corundum-structured oxides for growth of GaN -

    • Author(s)
      T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The 13th International Symposium on Advanced Technology (ISAT-13)
    • Place of Presentation
      Danang, Vietnam
    • Year and Date
      2014-11-13 – 2014-11-16
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Blue-green light emitting diodes using pn-GaInN homojunction type-structure

    • Author(s)
      K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist CVDを用いた酸化物薄膜成長

    • Author(s)
      畠山 匠, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication and characterization of photovoltaic devices consisted of metal-oxide thin films fabricated by molecular precursor method

    • Author(s)
      Y. Inaoka, H. Nagai, T. Honda and M. Sato
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] AlOx/AlN/GaNヘテロ構造の発光特性

    • Author(s)
      尾沼 猛儀、杉浦 洋平、山口 智広、本田 徹、東脇 正高
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道札幌市北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Cathode luminescence at 520 nm related on fluorescence green emission from pits formed on surface of GaInN films

    • Author(s)
      N. Toyomitsu, L. Sang, J. Wang, T. Yamaguchi, T. Honda and M. Sumiya
    • Organizer
      10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Ga-In-O薄膜のウェットエッチングプロセス検討

    • Author(s)
      吉田 邦晃, 藤岡 秀平, 後藤 良介, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
    • Organizer
      第62回応用物理学会春季講演会
    • Place of Presentation
      東海大学湘南キャンパス, 秦野, 神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides

    • Author(s)
      T. Yamaguchi, T. Onuma, H. Nagai, C. Mochizuki, M. Sato, T. Honda, T. Araki and Y. Nanishi
    • Organizer
      Third International Conference on Materials Energy and Environments (ICMEE 2014)
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-07-02 – 2014-07-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist CVD法を用いて成長したα-Al2O3基板上Ga-In-O薄膜の製作

    • Author(s)
      田沼 圭亮, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Characterization of GaN thin film grown on pseudo Al templates by radio-frequency plasma-assisted molecular beam epitaxy

    • Author(s)
      Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Light emission properties of ultra thin InN in the GaN matrix

    • Author(s)
      T. Honda, T. Yamaguchi, T. Onuma, D. Tajimi, N. Watanabe, N. Hashimoto, K. Kusakabe and A. Yoshikawa
    • Organizer
      International Conference on Metamaterials and Nanophysics (Metanano2014)
    • Place of Presentation
      Hotel Melia Varadero, Varadero, Cuba
    • Year and Date
      2014-04-22 – 2014-05-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method

    • Author(s)
      T. Onuma, T. Yasuno, S. Takano, R. Goto, S. Fujioka, T. Hatakeyama, H. Hara, C. Mochizuki, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-25
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] GaInNからの蛍光発光と結晶性の相関

    • Author(s)
      豊満 直樹, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] n-GaN結晶のXPSにおける内部電界強度とピーク非対称性の検討

    • Author(s)
      磯野 大樹, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 窒化ガリウム系発光ダイオードにおける「グリーンギャップ」問題

    • Author(s)
      本田 徹, 山口 智広
    • Organizer
      JAEA放射光科学シンポジウム 2015 「環境・エネルギー研究開発における放射光科学」
    • Place of Presentation
      型放射光施設 SPring-8 放射光普及棟, 佐用町, 兵庫県
    • Year and Date
      2015-03-16 – 2015-03-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 厚膜GaInN成長とホモ接合型青緑LEDsの製作

    • Author(s)
      鳴谷 健人, 山口 智広, 本田 徹
    • Organizer
      37th International Symposium on Optical communications
    • Place of Presentation
      Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
    • Year and Date
      2014-08-09 – 2014-08-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性

    • Author(s)
      尾沼 猛儀、齋藤 伸吾、佐々木 公平、増井 建和、山口 智広、本田 徹、東脇 正高
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県平塚市東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25289093
  • [Presentation] Fabrication and electrochemical properties of LiNi0.5Mn0.5O2 thin-film cathode for lithium ion batteries

    • Author(s)
      K. Honma, H. Nagai, L. Lu, I. Takano, T. Honda, and M. Sato
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes

    • Author(s)
      S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-24
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of -(AlGa)2O3 on sapphire substrate by mist CVD

    • Author(s)
      T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
    • Organizer
      10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist chemical vapor deposition growth of α-(AlGa)2O3

    • Author(s)
      T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Template layer for c-axis oriented ZnO thin films by using a molecular precursor solution

    • Author(s)
      T. Shibukawa, H. Nagai, I. Takano, T. Honda, and M. Sato
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of In-Doped ZnO Thin Film by Molecular Precursor Method

    • Author(s)
      R. Goto, T. Yasuno, H. Nagai, H. Hara, M. Sato, and T. Honda
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-24
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Spin-coating fabrication of In-doped ZnO films by molecular precursor method

    • Author(s)
      R. Goto, T. Yasuno, T. Hatakeyama, H. Hara, H. Nagai, T. Yamaguchi, M. Sato, T. Honda
    • Organizer
      International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2014-06-10 – 2014-06-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces

    • Author(s)
      D. Isono, S. Fujioka, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      Materials Research Society 2014 Fall Meeting
    • Place of Presentation
      Hynes Convention Center, Boston, MA, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques

    • Author(s)
      N. Watanabe, D. Tajimi, N. Hashimoto, K. Kusakabe, K.Wang, T. Yamaguchi, A. Yoshikawa and T. Honda
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN 2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Mist chemical vapor deposition of Ga-In-O films

    • Author(s)
      K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of ZnO thin film by molecular precursor method

    • Author(s)
      R. Goto, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
    • Organizer
      The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
    • Place of Presentation
      Kogakuin University, Tokyo, Japan
    • Year and Date
      2014-11-01 – 2014-11-02
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Fabrication of the transparent and c-axis oriented ZnO thin film by molecular precursor method

    • Author(s)
      T. Shibukawa, H. Nagai, I. Takano, T. Honda and M. Sato
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] n-GaN結晶のXPSスペクトルにおける内殻準位ピーク非対称性の検討

    • Author(s)
      磯野 大樹, 網谷 良介, 杉浦 洋平, 山口 智広, 本田 徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌, 北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode

    • Author(s)
      K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma, and T. Honda
    • Organizer
      Conference on LED and Its Industrial Application ’14 (LEDIA’14)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-22 – 2014-04-24
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] Thickness dependence of pseudo aluminum templates in growth of GaN by RF-MBE

    • Author(s)
      S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN 2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-25420341
  • [Presentation] 分子プレカーサー水溶液を用いたミストCVD法によるZnO薄膜製作

    • Author(s)
      後藤 良介, 澁木 勇人, 田沼 圭亮, 畠山 匠, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
    • Organizer
      第62回応用物理学会春季講演会
    • Place of Presentation
      東海大学湘南キャンパス, 秦野, 神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420341
  • 1.  KAWANISHI Hideo (70016658)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 1 results
  • 2.  SAKAGUCHI Takahiro (70215622)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 3.  HASEGAWA Fumio (70143170)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  YAMAGUCHI Tomohiro (50454517)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 181 results
  • 5.  SAKAMOTO Tesuo (20313067)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  Higashiwaki Masataka (70358927)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 27 results
  • 7.  IGA Kenichi (10016785)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  KOYAMA Fumio (30178397)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  MIYAMOTO Tomoyuki (70282861)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  尾沼 猛儀 (10375420)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 24 results
  • 11.  SATO Mitsunobu
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi