Iwata Hiroyuki 岩田博之

… Alternative Names

岩田博之イワタヒロユキ

IWATA Hiroyuki 岩田博之

Less

Researcher Number	20261034
Other IDs
External Links
Affiliation (Current)	2025: 愛知工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2020 – 2023: 愛知工業大学, 工学部, 教授 2012: 愛知工業大学, 工学部, 准教授 2008: Aichi Institute of Technology, 工学部, 講師 2005 – 2008: 愛知工業大学, 工学部・電気学科, 講師
Review Section/Research Field	Principal Investigator Basic Section 26050:Material processing and microstructure control-related / Thin film/Surface and interfacial physical properties Except Principal Investigator Basic Section 28020:Nanostructural physics-related / Basic Section 26010:Metallic material properties-related / Applied materials science/Crystal engineering
Keywords	Principal Investigator 結晶欠陥 / 透過型電子顕微鏡 / レーザ集光 / レーザ加工 / レーザー損傷 / TEM / ステルスダイシング / 集光 / ボイド / レーザ損傷 … More / 透過電子顕微鏡 / 転位 / ナノデバイス / 格子欠陥 / RBS / ブリスタリング / スマートカット / 水素イオン注入 … More Except Principal Investigator 量子ドット / SiCドット / CVD / SiC/BN積層 / BN / SiC / 雰囲気 / シリコン / レーザ照射 / プラズマ / Si / ボイド / レーザ / FTIR評価 / TEM観察 / PL / TEM / 疑似格子整合 / MOVPE成長 / シリコンホトニクス / 遠赤外吸収スペクトル / 透過電子顕微鏡観察 / シリコン基板 / 不純物ドーピング / 格子欠陥 / 有機金属気相成長 / 窒化物半導体 Less

Fundamental Processes of Instantaneous Structural Transformation of Crystal Defects Using Synergistic Effects of Irradiation Damage and Localized Laser HeatingPrincipal Investigator
- Principal Investigator
  
  岩田博之
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 26050:Material processing and microstructure control-related
- Research Institution
  Aichi Institute of Technology
Mechanism of formation of voids by laser
- Principal Investigator
  
  坂公恭
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 26010:Metallic material properties-related
- Research Institution
  Aichi Institute of Technology
Multilayer SiC quantum dot formation and evaluation of their physical properties
- Principal Investigator
  
  Takeuchi Wakana
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 28020:Nanostructural physics-related
- Research Institution
  Aichi Institute of Technology
Growth of high quality GaN on an Si substrate
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
Understanding the dynamic behavior of blistering on the semiconductor surface and its application for nanofabricationPrincipal Investigator
- Principal Investigator
  
  IWATA Hiroyuki
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Aichi Institute of Technology

All 2024 2023 2022 2021 2020 2013 2012 2011 2008 2007 2006 2005

All Journal Article Presentation

[Journal Article] Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser2024
- Author(s)
  岩田博之, 坂公恭
- Journal Title
  
  Journal of the Japan Institute of Metals and Materials
  
  Volume: 88 Issue: 4 Pages: 69-80
- DOI
  10.2320/jinstmet.J2023032
- ISSN
  0021-4876, 1880-6880, 2433-7501
- Year and Date
  2024-04-01
- Language
  Japanese
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05066, KAKENHI-PROJECT-22K04783
[Journal Article] Whereabouts of msiing atoms in a laser-injected Si ( Part IV)2024
- Author(s)
  Hiroyasu Saka, Hiriyuki Iwata
- Journal Title
  
  Philosophical Magazine
  
  Volume: 104 Issue: 1 Pages: 55-67
- DOI
  10.1080/14786435.2023.2283115
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05066, KAKENHI-PROJECT-22K04783
[Journal Article] Electron microscopy on mechanism of voidage and caracking in Si bu onjection of a permeable infra^red laser2024
- Author(s)
  Hiriyuki Iwata,Hiroyasu Saka,
- Journal Title
  
  Materials Transaction
  
  Volume: 65
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] Whereabouts of msiing atoms in a laser-injected Si ( Part III)2023
- Author(s)
  Hiroyasu Saka, Hiriyuki Iwata, Makoto Tekagi
- Journal Title
  
  Philosophial Magazine
  
  Volume: 103 Issue: 14 Pages: 1345-1359
- DOI
  10.1080/14786435.2023.2211808
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] 機械研磨したGaN表面の格子欠陥評価2023
- Author(s)
  澤木宣彦, 岩田博之, 梅村樹, 隅田憲吾
- Journal Title
  
  愛知工業大学総合技術研究所報告
  
  Volume: 25 Pages: 81-82
- Data Source
  KAKENHI-PROJECT-22K04783
[Journal Article] 多元ナノ構造解析システムの構築と手法開発2023
- Author(s)
  岩田博之, 高木誠, 澤木宣彦, 坂公恭
- Journal Title
  
  愛知工業大学総合技術研究所報告
  
  Volume: 25 Pages: 73-75
- Data Source
  KAKENHI-PROJECT-22K04783
[Journal Article] Degradation of photoluminescence intensity induced by mechanical polish in aGaN epitaxial layer2022
- Author(s)
  Itsuki Umemura, Kengo Sumita, Masahiko Demachi, Kentaro Osakabe,Hiroyuki Iwata, Nobuhiko Sawaki
- Journal Title
  
  Proceeding of ISPlasma2023/IC-PLANTS2023
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-22K04783
[Journal Article] パルスレーザ集光により生ずるサファイヤ結晶欠陥の性状と加工効率”2021
- Author(s)
  岩田博之、河口大祐、坂公恭
- Journal Title
  
  愛知工業大学総合技術研究所の研究報告
  
  Volume: 23 Pages: 64-65
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] Whereabouts of missing atoms in a laser-injected Si (Part Ⅱ) Precision mass measurement of a laser-injected Si wafer and re-examination by transmission electron microscopy2021
- Author(s)
  H.Saka, H.Iwata
- Journal Title
  
  名古屋大学電子光学研究のあゆみ
  
  Volume: 32 Pages: 18-26
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] Pre-treatment with Stealth Type Laser Dicing for TEM Sample Preparation2021
- Author(s)
  岩田博之，高木誠，坂公恭
- Journal Title
  
  KENBIKYO
  
  Volume: 56 Issue: 3 Pages: 139-142
- DOI
  10.11410/kenbikyo.56.3_139
- NAID
  130008137912
- ISSN
  1349-0958, 2434-2386
- Year and Date
  2021-12-30
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] Effects of Atmosphere and Temperature on Microtribology between Silicon Single Crystals2020
- Author(s)
  高木誠、長江昂亮、木内亮介、岩田博之、坂公恭
- Journal Title
  
  Journal of the Japan Institute of Metals and Materials
  
  Volume: 84 Issue: 9 Pages: 304-309
- DOI
  10.2320/jinstmet.J2020014
- NAID
  130007890406
- ISSN
  0021-4876, 1880-6880, 2433-7501
- Year and Date
  2020-09-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05066
[Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Volume: 8625 Pages: 6-6
- DOI
  10.1117/12.2002738
- Data Source
  KAKENHI-PROJECT-22360009, KAKENHI-PROJECT-24656019
[Journal Article] TEM and HRTEM Observations of Microstructural Change of Silicon Single Crystal Scratched under Very Small Loading Forces by AFM2008
- Author(s)
  Makoto Takagi, Kenji Onodera, Akihito Matsumuro, Hiroyuki Iwata, Katsuhiro Sasaki, Hiroyasu Saka
- Journal Title
  
  Materials Transactions 49
  
  Pages: 1298-1302
- NAID
  10021147448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Impurity Co-implantation on Hydrogen Surface Blistering2008
- Author(s)
  H.Iwata, M.Takagi, Y.Tokuda
- Journal Title
  
  International Journal of Advanced Microscopy and TheoreticalCalculations 1
  
  Pages: 1262-263
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Impurity Co-implantation on Hydrogen Surface Blistering2008
- Author(s)
  H. Iwata, M. Takagi, Y. Tokuda
- Journal Title
  
  International Journal of Advanced Microscopy and Theoretical Calculations 1
  
  Pages: 262-263
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] TEM and HRTEM Observations of Microstructural Change of Silicon Single Crystal Scratched under Very Small Loading Forces by AFM Materials Transactions2008
- Author(s)
  Makoto Takagi, Kenji Onodera, Akihito Matsumuro, Hiroyuki Iwata, Katsuhiro Sasaki and Hiroyasu Saka
- Journal Title
  
  49
  
  Pages: 1298-1302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Impurity Co-implantation on Hydrogen Surface Exfoliation2008
- Author(s)
  H.Iwata, M.Takagi, Y.Tokuda
- Journal Title
  
  JAEA Takasaki Annual Report 2006 JAEA-Review 2007-060
  
  Pages: 150-150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] 水素ブリスタリングにおけるフッ素注入援用効果2008
- Author(s)
  岩田博之、徳田豊、高木誠, 井村徹
- Journal Title
  
  日本顕微鏡学会第61回学術講演会要旨集, 顕微鏡 Vol.40 Supplement 1
  
  Pages: 462-462
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Impurity Co-implantation on Hydrogen Surface Exfoliation2007
- Author(s)
  H. Iwata, M. Takagi, Y. Tokuda
- Journal Title
  
  JAEA-Review 060
  
  Pages: 150-150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] SPMを用いたSi単結晶のナノ加工と表面の構造変化2007
- Author(s)
  吉田浩也, 松室昭仁, 岩田博之, 高木誠
- Journal Title
  
  精密工学会誌 73
  
  Pages: 1149-1153
- NAID
  110006403576
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] 極微小電流計測型ナノプローブその場観察システムの開発2007
- Author(s)
  岩田博之, 奥田東
- Journal Title
  
  愛知工業大学総合技術研究所研究報告 9
  
  Pages: 47-52
- NAID
  110007163232
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] SPMによる引掻試験でシリコン単結晶に生じた微構造変化のTEM観察2006
- Author(s)
  高木誠, 小野寺健司, 岩田博之, 井村徹, 佐々木勝寛, 松公恭;
- Journal Title
  
  総合技術研究所総合報告 8
  
  Pages: 39-41
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Boron Co-implantation on Hydrogen induced Exfoliation;2006
- Author(s)
  H.Iwata, Y.Tojuda, M.Takagi, T.Imura
- Journal Title
  
  Proceedings of 16^th International Microscopy Congress 3
  
  Pages: 1352-1352
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] RBS/Cを用いた水素イオン注入欠陥の評価2006
- Author(s)
  岩田博之, 清水孝延, 横井久人, 石神龍哉, 伊藤慶文, 徳田豊, 高木誠
- Journal Title
  
  総合技術研究所総合報告 8
  
  Pages: 77-80
- NAID
  110004812523
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] カーボンナノチューブ短針を用いた高アスペクト比なのスケール穴加工法の開発2006
- Author(s)
  松室昭仁, 高木誠, 岩田博之, 松本章宏, 野間日出男, 井村徹;
- Journal Title
  
  総合技術研究所総合報告 8
  
  Pages: 33-37
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] RBS/Cを用いた水素イオン注入欠陥の評価2006
- Author(s)
  岩田博之、清水孝延、横井久人、石神龍哉、伊藤慶文、徳田豊、高木誠
- Journal Title
  
  総合技術研究所総合報告 8
  
  Pages: 77-80
- NAID
  110004812523
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Effect of Boron Co-implantation on Hydrogen induced Exfoliation2006
- Author(s)
  H.Iwata, Y.Tokuda, M.Takagi, T.Imura
- Journal Title
  
  Proceedings of 16^<th> International Microscopy Congress 3
  
  Pages: 1352-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Impact toughness of an ingot hypereutectic Al-23 mass% Si alloy improved by rotary-die equal-channel angular pressing2005
- Author(s)
  Aibin Ma, Kazutaka Suzuki, Naobumi Saito, Yoshinori Nishida, Makoto Takagi, Ichinose Shigematsu, Hiroyuki Iwata
- Journal Title
  
  Material Science and Engineering A399
  
  Pages: 181-189
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] TEM Observation of Microstructural Change of Silicon Single Crystal Caused by Scratching Tests Using SPM,2005
- Author(s)
  M.Takagi, K.Onodera, H.Iwata, T.Imura, K.Sasaki, H.Saka
- Journal Title
  
  Materials Research Society Sympo.Proc.
  
  Pages: 247-252
- NAID
  110004812516
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Tensile property of an Al-11 mass%Si alloy at elevated temperatures processed by rotary-die equal-channel angular pressing2005
- Author(s)
  Aibin Ma, Makoto Takagi, Naobumi Saito, Hiroyuki Iwata, Yoshinori Nishida, Kazutaka Suzuki, Ichinori Shigematsu
- Journal Title
  
  Material Science and Engineering A408
  
  Pages: 147-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Impact toughness of an ingot hypereutectic Al-23 mass% Si alloy improved by rotary-die equal-channel angular pressing,2005
- Author(s)
  Aibin Ma, Kazutaka Suzuki, Naobumi Saito, Yoshinori Nishida, Makoto Takagi, Ichinose Shigematsu, Hiroyuki Iwata
- Journal Title
  
  Material Science and Engineering, A399
  
  Pages: 181-189
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] 水素ブリスタリングにおけるフッ素注入援用効果,日本顕微鏡学会第61回学術講演会要旨集2005
- Author(s)
  岩田博之, 徳田豊, 高木誠, 井村徹
- Journal Title
  
  顕微鏡 Vol.40 Supplement 1
  
  Pages: 462-462
- Data Source
  KAKENHI-PROJECT-17560025
[Journal Article] Tensile property of an Al-11 mass%Si alloy at elevated temperatures processed by rotary-die equal-channel angular pressing,2005
- Author(s)
  Aibin Ma, Makoto Takagi, Naobumi Saito, Hiroyuki Iwata, Yoshinori Nishida, Kazutaka Suzuki, Ichinori Shigematsu
- Journal Title
  
  Material Science and Engineering, A408
  
  Pages: 147-153
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] 内部集光レーザダイシングによるボイド形成と消滅の赤外光顕・BF-STEM観察2023
- Author(s)
  岩田博之，高木誠、坂公恭
- Organizer
  顕微鏡学会学術講演会
- Data Source
  KAKENHI-PROJECT-22K04783
[Presentation] Modified Layers and Crack Formation Caused by Internal Focusing Pulse Laser Processing for Semiconductor and Ultra-Hard Materials2023
- Author(s)
  Hiroyuki Iwata, Makoto Takagi and Hiroyasu Saka
- Organizer
  International Micrscopy Congress (IMC20)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04783
[Presentation] 内部集光レーザダイシングによるサファイヤ内部欠陥の観察2022
- Author(s)
  岩田博之，坂公恭
- Organizer
  顕微鏡
- Data Source
  KAKENHI-PROJECT-22K04783
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawakui, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2012
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013, Feb. 4
- Place of Presentation
  San Francisco (USA).
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] nda, M.Yamaguchi, and H.Amano, "Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Ho
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on NitrideSemiconductors
- Place of Presentation
  Sapporo.
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba.
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Effect of Impurity Co-implantation on Hydrogen Surface Blistering2008
- Author(s)
  H. Iwata, M. Takagi, Y. Tokuda
- Organizer
  The 1^<st> International Symposium Advanced Microscopy and Theoretical Calculations
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] SiC水素ブリスタリングの注入温度依存性2008
- Author(s)
  岩田博之, 高木誠, 徳田豊
- Organizer
  日本顕微鏡学会第64回学術講演会
- Place of Presentation
  京都国際会議場
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] Sic水素ブリスタリングの注入温度依存性2008
- Author(s)
  岩田博之, 高木誠, 徳田豊
- Organizer
  日本顕微鏡学会第64回学術講演会
- Place of Presentation
  京都国際会議場
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] 低温イオン注入を用いた半導体材料の結晶欠陥評価とデバイス作製への応用2008
- Author(s)
  岩田博之, 高木誠, 徳田豊
- Organizer
  平成20年原子力機構施設利用一般共同研究成果報告会
- Place of Presentation
  茨城県東海村リコッティ
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] 光顕その場加熱観察によるSiC水素ブリスタリングの動的挙動2007
- Author(s)
  岩田博之, 高木誠, 徳田豊
- Organizer
  日本顕微鏡学会第64回学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-17560025
[Presentation] 光顕その場加熱観察によるSiC水素ブリスタリングの動的挙動2007
- Author(s)
  岩田博之, 高木誠, 徳田豊
- Organizer
  日本顕微鏡学会第64回学術講演会
- Place of Presentation
  朱鷺メッセ,新潟
- Data Source
  KAKENHI-PROJECT-17560025

1. SAWAKI Nobuhiko (70023330)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. HONDA Yoshio (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
3. Takeuchi Wakana (90569386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 坂公恭 (90023267)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. 五島敬史郎 (00550146)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Iwata Hiroyuki 岩田 博之

岩田 博之 イワタ ヒロユキ

IWATA Hiroyuki 岩田 博之

Research Projects

Research Products

Co-Researchers

Fundamental Processes of Instantaneous Structural Transformation of Crystal Defects Using Synergistic Effects of Irradiation Damage and Localized Laser HeatingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Mechanism of formation of voids by laser

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Multilayer SiC quantum dot formation and evaluation of their physical properties

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of high quality GaN on an Si substrate

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Understanding the dynamic behavior of blistering on the semiconductor surface and its application for nanofabricationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser2024

Author(s)

Journal Title

DOI

ISSN

Year and Date

Language

Data Source

[Journal Article] Whereabouts of msiing atoms in a laser-injected Si ( Part IV)2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electron microscopy on mechanism of voidage and caracking in Si bu onjection of a permeable infra^red laser2024

Author(s)

Journal Title

Data Source

[Journal Article] Whereabouts of msiing atoms in a laser-injected Si ( Part III)2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 機械研磨したGaN表面の格子欠陥評価2023

Author(s)

Journal Title

Data Source

[Journal Article] 多元ナノ構造解析システムの構築と手法開発2023

Author(s)

Journal Title

Data Source

[Journal Article] Degradation of photoluminescence intensity induced by mechanical polish in aGaN epitaxial layer2022

Author(s)

Journal Title

Data Source

[Journal Article] パルスレーザ集光により生ずるサファイヤ結晶欠陥の性状と加工効率”2021

Author(s)

Journal Title

Data Source

[Journal Article] Whereabouts of missing atoms in a laser-injected Si (Part Ⅱ) Precision mass measurement of a laser-injected Si wafer and re-examination by transmission electron microscopy2021

Author(s)

Journal Title

Data Source

[Journal Article] Pre-treatment with Stealth Type Laser Dicing for TEM Sample Preparation2021

Author(s)

Iwata Hiroyuki 岩田博之

岩田博之イワタヒロユキ

IWATA Hiroyuki 岩田博之