Taizoh SADOH 佐道泰造

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SADOH Taizoh 佐道泰造

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Researcher Number	20274491
Other IDs
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Affiliation (Current)	2025: 九州大学, 総合理工学研究院, 教授
Affiliation (based on the past Project Information) *help	2019 – 2025: 九州大学, システム情報科学研究院, 准教授 2016 – 2017: 九州大学, システム情報科学研究院, 准教授 2015: 九州大学, 大学院システム情報科学研究院, 准教授 2012 – 2015: 九州大学, システム情報科学研究科(研究院, 准教授 2013: 九州大学, 大学院システム情報科学研究院, 准教授 … More 2012: 九州大学, 大学院・システム情報科学研究院, 准教授研究者番号 2007 – 2011: Kyushu University, 大学院・システム情報科学研究院, 准教授 2006: Kyushu University, Department of Electronics, Associate professor, システム情報科学研究院, 助教授 2006: Kyushu University, Department of Electronics, Associate professor, 大学院システム情報科学研究院, 助教授 2000 – 2006: 九州大学, 大学院・システム情報科学研究院, 助教授 1999: Kyushu University, Department of Electronic Device Engineering, Associate Professor, 大学院・システム情報科学研究科, 助教授 1998: 九州大学, 大学院システム情報科学研究科, 助教授 1997: 九州大学, 大学院・システム情報科学研究科, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Applied materials science/Crystal engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields / Applied materials science/Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / Science and Engineering / Medium-sized Section 26:Materials engineering and related fields … More / Basic Section 26040:Structural materials and functional materials-related / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties / 表面界面物性 Less
Keywords	Principal Investigator 結晶成長 / トランジスタ / 集積回路 / 半導体 / 薄膜トランジスタ / シリコンゲルマニウム / ディスプレイ / 電子デバイス・機器 / 電子・電気材料 / シリコン … More / イオンビーム / Ⅳ族系ヘテロ半導体 / 電気・電子材料 / Ⅳ族系ヘテロ材料 / IV族系ヘテロ材料 / IV族系ヘテロ半導体 / Thin-film transistor / Silicon-germanium / Display / Integrated circuit / Electronic device / Oxidation / Crystallization / Silicidation / Rradiation-induced defect / Ion-beam / Silicon / 酸化 / シリサイド / 照射誘起欠陥 / Si系ヘテロ材料 / 溶融成長 / SiGe / ヘテロ半導体 / 照射欠陥 … More Except Principal Investigator 電子デバイス・機器 / 集積回路 / 結晶成長 / ディスプレイ / 半導体 / シリコン / silicon / 強磁性体 / スピントランジスタ / 薄膜トランジスタ / シリコンゲルマニウム / SiGeSn / SiSn / GeSn / 高圧相変態 / 電気特性 / 構造およびミクロ組織解析 / 電子ビーム結晶化 / アモルファスGeSn / 電子ビーム / 結晶化 / アモルファス / Semiconducting silicide / Crystal Growth / Opto-electronic integrated circuit / Optical communication / Opto-device / Electronic device / シリサイド半導体 / 光・電気集積回路 / 光通信 / オプトデバイス / crystal growth / display / large-scale integrated circuit / electron device / solid-phase crystallization / ion beam / 固相成長 / イオン線 / Si系ヘテロ半導体 / Ｓｉ系ヘテロ半導体 / 電気・電子材料 / エピタキシャル成長 / 次世代 LSI / Si 系スピントランジスタ / フレキシブル / シリコンゲルマニウ / システムオンパネル / 多結晶シリコン / シリコン薄膜 / レーザーアニール / 金属誘起固相結晶化 / ナノインプリント / スピントロニクス / マイクロマシン / エッチング / LIGA / リソグラフィ / LSI / シンクロトロン放射光 Less

絶縁膜上における極薄半導体膜の固相成長の探求と次世代トランジスタへの展開Principal Investigator
- Principal Investigator
  
  佐道泰造
- Project Period (FY)
  2025 – 2029
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Development of Novel SiGeSn alloys Using High-Pressure Phase Transformation and Their Application to Environment-friendly Devices
- Principal Investigator
  
  生駒嘉史
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Kyushu University
Formation of high-quality semiconductor thin films on insulator for transistor applicationPrincipal Investigator
- Principal Investigator
  
  佐道泰造
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Development of rapid crystallization technique of amorphous GeSn films at room temperature by electron beam and electrical characterization of the products
- Principal Investigator
  
  仲村龍介
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26040:Structural materials and functional materials-related
- Research Institution
  The University of Shiga Prefecture
Development of Non-Equilibrium Processing of High Carrier Mobility Semiconductors on Insulator for High Speed Large Scale Integrated CircuitsPrincipal Investigator
- Principal Investigator
  
  Taizoh SADOH
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kyushu University
Development for High-Performance Tunnel Transistors with Direct-Transition-Type GeSnPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Low temperature growth of GeSn crystals on insulator and application to high-speed transistors for three dimensional LSIPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development for High-Performance Tunnel Transistors with Direct-Transition Band Structure of GePrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Non-Thermal-Equilibrium Solid-Phase Crystallization of GeSn-on-Insulator on Si Platform
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development of Hetero-Materials Integration Technology for Multi-Functional Hybrid Large-Scale Integrated Circuits
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
High-Quality Formation of Strained-Ge-on-Insulator for Ultrahigh-Speed Transistor ApplicationPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Atomically-control of halfmetal/Si interface for spin-transistors
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development of spin-function on flexible semiconductors
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Formation of strained quasi-single crystal SiGe on glass for transistor applicationPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh, 権丈淳
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
High-Quality Formation of SiGe on Flexible Substrates for Transistor Application
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Control of Strain and Orientation of SiGe on Glass for High-Performance TransistorPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Growth of Ferromagnetic Silicide for Source/Drain Engineering
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyushu University
Study of the Formation of Single-Crystal Silicon Thin-Film Using Nanoimprint Seeding
- Principal Investigator
  
  ASANO Tanemasa
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kyushu University
Formation of strained SiGe on glass and its application to high-speed thin-film transistorPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYUSHU UNIVERCITY
Lattice-strain control of semiconducting silicide for 1.5μm light-emission and wave-length modulation
- Principal Investigator
  
  KENJO Atsushi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Low-temperature orientation-control of SiGe quasi-single crystal on glass and its device application
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
ヘテロ半導体におけるドライプロセス誘起欠陥の挙動解明と制御Principal Investigator
- Principal Investigator
  
  佐道泰造
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Si系ヘテロ混晶の非熱平衡成長の創出とボンド配列の局在制御による新機能探索研究
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyushu University
Formation of Si Quasi-Single Crystal by Controlled Excess Vacancy
- Principal Investigator
  
  MIYAO Masanobu
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Dynamic Behavior of Radiation-induced Defects in Silicon Crystal and Its Application to Semiconductor TechnologyPrincipal Investigator
- Principal Investigator
  
  SADOH Taizoh, 鶴島稔夫
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYUSHU UNIVERSITY
九州シンクロトロン放射光のエレクトロニクス応用研究に関する調査研究
- Principal Investigator
  
  黒木幸令
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Kyushu University

[Journal Article] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing2023
- Author(s)
  Koga Taishiro、Nagano Takaya、Moto Kenta、Yamamoto Keisuke、Sadoh Taizoh
- Journal Title
  
  Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials
  
  Volume: - Pages: 873-874
- DOI
  10.7567/ssdm.2023.ps-11-04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186
[Journal Article] Grain Enlargement of Ultrathin Si Films on Insulators by Sn-Doping2023
- Author(s)
  Hanafusa Yuki、Okamoto Kota、Sadoh Taizoh
- Journal Title
  
  Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials
  
  Volume: - Pages: 871-872
- DOI
  10.7567/ssdm.2023.ps-11-03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186
[Journal Article] Ultra-High Concentration Doping by Excimer Laser Annealing Using Solid-Diffusion Source2023
- Author(s)
  Aoki Ren、Katayama Keita、Nakamura Daisuke、Yabuta Hisato、Ikenoue Hiroshi、Sadoh Taizoh
- Journal Title
  
  Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials
  
  Volume: - Pages: 883-884
- DOI
  10.7567/ssdm.2023.ps-11-09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186
[Journal Article] Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing2023
- Author(s)
  Katayama Keita、Ikenoue Hiroshi、Sadoh Taizoh
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 160 Pages: 107433-107433
- DOI
  10.1016/j.mssp.2023.107433
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186
[Journal Article] Improved carrier mobility of Sn-doped Ge thin films (<20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation2023
- Author(s)
  Nagano Takaya、Hara Ryutaro、Moto Kenta、Yamamoto Keisuke、Sadoh Taizoh
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 165 Pages: 107692-107692
- DOI
  10.1016/j.mssp.2023.107692
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186, KAKENHI-PROJECT-23K13674
[Journal Article] Solid-Phase Crystallization Characteristics of Interface-Modulated Sn- Doped Ge Thin Films on Insulator with Capping2022
- Author(s)
  Nagano Takaya、Hara Ryutaro、Sadoh Taizoh
- Journal Title
  
  International Workshop on Active-Matrix Flatpanel Displays and Devices
  
  Volume: 29 Pages: 114-115
- DOI
  10.23919/am-fpd54920.2022.9851292
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04186
[Journal Article] レーザープロセスを用いたIV族系半導体の結晶成長とドーピング2021
- Author(s)
  佐道泰造, 片山慶太, 池上浩, 白谷正治
- Journal Title
  
  シリコンテクノロジー（応用物理学会シリコンテクノロジー分科会）
  
  Volume: 231 Pages: 22-25
- Data Source
  KAKENHI-PROJECT-19K21976
[Journal Article] Layer-exchange crystallization for low-temperature (450°C) formation of n-type tensile-strained Ge on insulator2020
- Author(s)
  Gao Hongmiao、Sadoh Taizoh
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 17 Pages: 172102-172102
- DOI
  10.1063/5.0020489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21976
[Journal Article] Enhanced mobility of Sn-doped Ge thin-films (≦50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization2019
- Author(s)
  Xu Chang、Gong Xiangsheng、Miyao Masanobu、Sadoh Taizoh
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 4 Pages: 042101-042101
- DOI
  10.1063/1.5096798
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21976
[Journal Article] Low-Temperature (～250°C) Gold-Induced Lateral Growth of Sn-Doped Ge on Insulator Enhanced by Layer-Exchange Reaction2019
- Author(s)
  Sadoh Taizoh、Sakai Takatsugu、Matsumura Ryo
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8 Issue: 10 Pages: P609-P614
- DOI
  10.1149/2.0281910jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21976
[Journal Article] Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics2017
- Author(s)
  Masanobu Miyao and Taizoh Sadoh
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 5S1 Pages: 05DA06-05DA06
- DOI
  10.7567/jjap.56.05da06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-16K14234
[Journal Article] Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing2017
- Author(s)
  Sadoh T.、Kurosawa M.、Heya A.、Matsuo N.、Miyao M.
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 8-11
- DOI
  10.1016/j.mssp.2016.10.033
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14234
[Journal Article] Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (>10%) GeSn on insulator enhanced by weak laser irradiation2017
- Author(s)
  Moto Kenta、Sugino Takayuki、Matsumura Ryo、Ikenoue Hiroshi、Miyao Masanobu、Sadoh Taizoh
- Journal Title
  
  AIP Advances
  
  Volume: 7 Issue: 7 Pages: 075204-075204
- DOI
  10.1063/1.4993220
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-17J00544
[Journal Article] Low-Temperature Formation of Large-Grain (≧10μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning2016
- Author(s)
  R. Aoki, Jong-Hyeok Park, M. Miyao, and T. Sadoh
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Issue: 3 Pages: P179-P182
- DOI
  10.1149/2.0161603jss
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization2016
- Author(s)
  T. Sakai, R. Matsumura, T. Sadoh, and M. Miyao
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 10 Pages: 105-108
- DOI
  10.1149/07510.0105ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14234
[Journal Article] High Sn-concentration (~8%) GeSn by low-temperature (~150 °C) solid-phase epitaxy of a-GeSn/c-Ge2016
- Author(s)
  T. Sadoh , A. Ooato, J.-H. Parkb, M. Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 20-23
- DOI
  10.1016/j.tsf.2015.09.069
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics2016
- Author(s)
  T. Sadoh, Jong-Hyeok Park, R. Aoki, and M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 3S1 Pages: 03CB01-03CB01
- DOI
  10.7567/jjap.55.03cb01
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics2016
- Author(s)
  T. Sadoh, R. Aoki, T. Tanaka, J.-H. Park, and M. Miyao
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 10 Pages: 95-103
- DOI
  10.1149/07510.0095ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03976
[Journal Article] High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness- dependent low-temperature solid-phase crystallization2016
- Author(s)
  T. Sadoh, Y. Kai, R. Matsumura, K. Moto, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: 109 Issue: 23
- DOI
  10.1063/1.4971825
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976
[Journal Article] Low-temperature (≦300℃) formation of orientation-controlled large-grain (≧10μm) Ge-rich SiGe on insulator by gold-induced crystallization2016
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, M.Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 3-6
- DOI
  10.1016/j.tsf.2015.10.057
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-15H03976
[Journal Article] Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration2016
- Author(s)
  K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 26
- DOI
  10.1063/1.4955059
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976
[Journal Article] Low-temperature (≦300℃) formation of orientation-controlled large-grain (≧10μm) Ge-rich SiGe on insulator by gold-induced crystallization2016
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, M. Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 3-6
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289089
[Journal Article] Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of -GeSn/c-Si structures2015
- Author(s)
  T. Sadoh, H. Chikita, R. Matsumura and M. Miyao
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118 Issue: 9
- DOI
  10.1063/1.4929878
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250◦C)2015
- Author(s)
  R. Matsumura, M. Sasaki, H. Chikita, T. Sadoh,　and M. Miyao
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4 Issue: 12 Pages: 95-97
- DOI
  10.1149/2.0021512ssl
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-25289089
[Journal Article] High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region2015
- Author(s)
  R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, and M. Miyao
- Journal Title
  
  AIP Advances
  
  Volume: ５ Issue: 6
- DOI
  10.1063/1.4922266
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Low-temperature (～180 ℃) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding2015
- Author(s)
  R. Matsumura, H. Chikita, Y. Kai, T. Sadoh, H. Ikenoue, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 26
- DOI
  10.1063/1.4939109
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator2015
- Author(s)
  Y. Kai, H. Chikita, R. Matsumura, T. Sadoh and M. Miyao
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Issue: 2 Pages: 76-79
- DOI
  10.1149/2.0241602jss
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03976, KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-26630133, KAKENHI-PROJECT-25289089
[Journal Article] Sn-induced low-temperature (～150℃) crystallization of Ge on insulator2014
- Author(s)
  A. Ooato, T. Suzuki, J. -H. PARK, M. Miyao, T. Sadoh
- Journal Title
  
  Thin solid films
  
  Volume: 557 Pages: 155-158
- DOI
  10.1016/j.tsf.2013.08.123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06549, KAKENHI-PROJECT-25289089
[Journal Article] In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth2014
- Author(s)
  H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 139-142
- DOI
  10.1016/j.tsf.2013.08.035
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656209, KAKENHI-PROJECT-25289089
[Journal Article] Dynamic analysis of rapid-melting growth using SiGe on insulator2014
- Author(s)
  R. Matsumura , Y. Tojo, M. Kurosawa, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 125-128
- DOI
  10.1016/j.tsf.2013.08.129
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656209
[Journal Article] (111)-oriented large-grain (≥50 μm) Ge crystals directly formed on flexible plast ic substrate by gold-induced layer-exchange crystallization2014
- Author(s)
  J. -H. Park, M. Miyao, T. Sadoh
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 2 Pages: 020302-020302
- DOI
  10.7567/jjap.53.020302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06549, KAKENHI-PROJECT-23360138
[Journal Article] Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates2014
- Author(s)
  M. Kurosawa, T. Sadoh, and M. Miyao
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 17
- DOI
  10.1063/1.4901262
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-12J04434, KAKENHI-PROJECT-25289089, KAKENHI-PROJECT-26630133
[Journal Article] Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization2014
- Author(s)
  T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 135-138
- DOI
  10.1016/j.tsf.2013.08.127
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-12J04434, KAKENHI-PROJECT-23360138, KAKENHI-PROJECT-25289089
[Journal Article] Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding2014
- Author(s)
  H. Chikita, R. Matsumura, Y. Kai, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 20
- DOI
  10.1063/1.4902344
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14J04366, KAKENHI-PROJECT-25289089
[Journal Article] Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region2014
- Author(s)
  R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao
- Journal Title
  
  ECS Solid State Letters
  
  Volume: Vol.3, No.5 Issue: 5 Pages: 61-64
- DOI
  10.1149/2.003405ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656209
[Journal Article] High carrier mobility in orientation-controlled large-grain (～50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization2014
- Author(s)
  J.-H. Park, K. Kasahara, K. Hamaya, M. Miyao, and T. Sadoh
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 25
- DOI
  10.1063/1.4885716
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-12J06549, KAKENHI-PROJECT-25289089, KAKENHI-PROJECT-25889041, KAKENHI-PROJECT-26630133
[Journal Article] Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth2014
- Author(s)
  R. Matsumura, R. Kato, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 10
- DOI
  10.1063/1.4895512
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289089
[Journal Article] Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth2013
- Author(s)
  R. Matsumura, Mohammad Anisuzzaman, H. Yokoyama, T. Sadoh, and M. Miyao
- Journal Title
  
  ECS Solid State Letters
  
  Volume: Vol.2, No.7 Issue: 7 Pages: 58-60
- DOI
  10.1149/2.002307ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth2013
- Author(s)
  Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.102 Issue: 9
- DOI
  10.1063/1.4794409
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656209
[Journal Article] (Invited) Hybrid- Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---2013
- Author(s)
  M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
- Journal Title
  
  ECS Transactions
  
  Volume: Vol.50 Issue: 5 Pages: 59-70
- DOI
  10.1149/05005.0059ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360127, KAKENHI-PROJECT-24656209
[Journal Article] Orientation-Control of Ge-Stripes-on-Insulator by Narrowing in Rapid-Melting Growth from Si(111) Seed2013
- Author(s)
  M. Anisuzzaman, S. Muta, M. Takahashi, Abdul Manaf Hashim, and T. Sadoh
- Journal Title
  
  ECS Solid State Letters
  
  Volume: Vol.2, No.9 Issue: 9 Pages: 76-78
- DOI
  10.1149/2.008309ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral- Crystallization2013
- Author(s)
  M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: Vol.2, No.3 Issue: 3 Pages: 54-57
- DOI
  10.1149/2.005303jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (～ 250℃)2013
- Author(s)
  J. -H. Park, T. Suzuki, M. Kurosawa, M. Miyao, T. Sadoh
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 8
- DOI
  10.1063/1.4819015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06549, KAKENHI-PROJECT-23360138
[Journal Article] "Low temperature(1~ 250oC) layer exchange crystallization of Si1? xGex(x=1? 0) on insulator for advanced flexible devices2012
- Author(s)
  Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520 Pages: 3293-3295
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures2012
- Author(s)
  T.Sadoh, M.Kurosawa, A.Heya, N.Matsuo, M.Miyao
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Issue: 8 Pages: 3276-3278
- DOI
  10.1016/j.tsf.2011.10.088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J01769, KAKENHI-PROJECT-23360138
[Journal Article] Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth2012
- Author(s)
  M. Kurasawa, et al.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 100 Issue: 17
- DOI
  10.1063/1.4705733
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J04434, KAKENHI-PROJECT-23360138
[Journal Article] Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform2012
- Author(s)
  Abdul Manaf Hashim, Mohamad Anisuzzaman, S. Muta, T. Sadoh, and M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.51 Issue: 6S Pages: 06FF04-06FF04
- DOI
  10.1143/jjap.51.06ff04
- NAID
  210000140769
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth2012
- Author(s)
  R. Matsumura, Y Tojo, M Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.101 Issue: 24
- DOI
  10.1063/1.4769998
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656209
[Journal Article] Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template2012
- Author(s)
  H. Yokoyama, K. Toko, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.100 Issue: 9
- DOI
  10.1063/1.3691258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Effects of dose on activation characteristics of P in Ge2012
- Author(s)
  M. Anisuzzaman and T. Sadoh
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520 Issue: 8 Pages: 3255-3258
- DOI
  10.1016/j.tsf.2011.10.076
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Au-Induced Low-Temperature(~ 250oC) Crystallization of Si on Insulator Through Layer-Exchange Process2011
- Author(s)
  Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: Vol.14, No.6 Pages: 232-234
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth2011
- Author(s)
  K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.99 Issue: 3
- DOI
  10.1063/1.3611904
- NAID
  120005133110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138, KAKENHI-PROJECT-23860011
[Journal Article] Growth-direction-dependent characteristics of Ge-on-insulator by Si - Ge mixing triggered melting growth2011
- Author(s)
  Y. Ohta, T. Tanaka, K. Toko, T. Sadoh, M. Miyao
- Journal Title
  
  Solid-State Electronics
  
  Volume: Vol.60 Issue: 1 Pages: 18-21
- DOI
  10.1016/j.sse.2011.01.039
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization2011
- Author(s)
  M.Kurosawa, N.Kawabata, R.Kato, T.Sadoh, M.Miyao
- Journal Title
  
  ECS Transactions
  
  Volume: 35 Issue: 5 Pages: 51-54
- DOI
  10.1149/1.3570776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J01769, KAKENHI-PROJECT-23360138
[Journal Article] Au-Catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator2011
- Author(s)
  J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Journal Title
  
  ECS Transactions
  
  Pages: 39-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Low-Temperature(~ 250oC) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator2011
- Author(s)
  T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: Vol.14, No.7 Pages: 274-276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Low-Temperature (～250℃) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator2011
- Author(s)
  T.Sadoh, M.Kurosawa, T.Hagihara, K.Toko, M.Miyao
- Journal Title
  
  Electrochemical and Solid-State Letters Vol.14, No.7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds2011
- Author(s)
  T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao
- Journal Title
  
  Solid-State Electronics
  
  Volume: Vol.60 Issue: 1 Pages: 22-25
- DOI
  10.1016/j.sse.2011.01.037
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Au-Induced Low-Temperature (～250℃) Crystallization of Si on Insulator Through Layer-Exchange Process : Jong-Hyeok Park2011
- Author(s)
  M.Kurosawa, N.Kawabata, M.Miyao, T.Sadoh
- Journal Title
  
  Electrochemical and Solid-State Letters Vol.14, No.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Dehydrogenation-Enhanced Large Strain (～1.6%) in Si Pillars Covered by Si_3N_4 Stress Liners2011
- Author(s)
  T.Sadoh, et al.
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 14
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Dehydrogenation-Enhanced Large Strain(～1.6%) in Si Pillars Covered by Si 3N 4 Stress Liners2011
- Author(s)
  M.Kurosawa, T.Sadoh, M.Miyao
- Journal Title
  
  Electrochemical and Solid-State Letters Vol.14, No.4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Source-Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications2011
- Author(s)
  K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50 Issue: 1R Pages: 010101-010101
- DOI
  10.1143/jjap.50.010101
- NAID
  210000138174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360127
[Journal Article] Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth2011
- Author(s)
  H. Yokoyama, Y. Ohta, K. Toko, T. Sadoh, and M. Miyao
- Journal Title
  
  ECS Transactions, The Electrochemical Society
  
  Volume: Vol.35, No.5 Issue: 5 Pages: 55-60
- DOI
  10.1149/1.3570777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman pectroscopy2011
- Author(s)
  M.Kurosawa, T.Sadoh, M.Miyao
- Journal Title
  
  Applied Physics Letters Vol.98, No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100),(110) and (111) Ge networks on insulators2011
- Author(s)
  I. Mizushima, K.Toko, Y. Ohta, T. Sakane, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol. 98, No.182107-1-3 Issue: 18
- DOI
  10.1063/1.3586259
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360138
[Journal Article] Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy2010
- Author(s)
  K. Toko, T. Tanaka, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Microscopic studies of metal-induced lateral crystallization in SiGe2010
- Author(s)
  M.Itakura, S.Masumori, N.Kuwano, H.Kanno, T.Sadoh, M.Miyao
- Journal Title
  
  Applied Physics Letters Vol.96, No.18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique2010
- Author(s)
  K.Toko, M.Kurosawa, H.Yokoyama, N.Kawabata, T.Sakane, Y.Ohta, T.Tanaka, T.Sadoh, M.Miyao
- Journal Title
  
  Applied Physics Express Vol.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices2010
- Author(s)
  M. Miyao, K. Hamaya, T. Sadoh, H. Itoh, Y. Maeda
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low-temperature (≦250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique : Jong-Hyeok Park2010
- Author(s)
  M.Kurosawa, N.Kawabata, M.Miyao, T.Sadoh
- Journal Title
  
  TENCON 2010-2010 IEEE Region 10
  
  Pages: 2196-2198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy2010
- Author(s)
  T. Tanaka, M. Tanaka, M. Itakura, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H^+ Irradiation and Postannealing2010
- Author(s)
  M.Tanaka, T.Sadoh, M.Miyao
- Journal Title
  
  Journal of The Electrochemical Society Vol.157, No.11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique2010
- Author(s)
  J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Journal Title
  
  Proceedings of TENCON 2010-2010 IEEE Region 10 Conference
  
  Pages: 2196-2198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Al-induced low-temperature crystallization of Si <1 x>Ge x (0<x<1) by controlling layer exchange process2010
- Author(s)
  M.Kurosawa, T.Sadoh, M.Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Al-induced low-temperature crystallization of Si1-xGex (0<x<1) by controlling layer exchange process2010
- Author(s)
  M. Kurosawa, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces2010
- Author(s)
  K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Letters Vol.96,No.16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed2010
- Author(s)
  K. Toko, T. Sakane, T. Tanaka, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy2010
- Author(s)
  S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces2010
- Author(s)
  K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.96
- URL
  http://dx.doi.org/10.1063/1.336870
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360127
[Journal Article] High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-doping Controlled Rapid Melting Growth2010
- Author(s)
  T. Tanaka, K. Toko, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Express 3,3
  
  Pages: 31301-31301
- NAID
  10027013905
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures2009
- Author(s)
  M. Kurosawa, Y. Tsumura, T. Sadoh, M. Miyao
- Journal Title
  
  Journal of the Korean Physical Society 54,1
  
  Pages: 451-454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x: 0-1) on insulator2009
- Author(s)
  K. Toko, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Letters 94,19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures2009
- Author(s)
  M.Kurosawa, Y.Tsumura, T.Sadoh, M.Miyao
- Journal Title
  
  Journal of the Korean Physical Society Vol.54, No.1
  
  Pages: 451-454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation2009
- Author(s)
  T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, M. Miyao
- Journal Title
  
  Applied Physics Letters 95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth2009
- Author(s)
  M. Miyao, K. Toko, T. Tanaka, T. Sadoh
- Journal Title
  
  Applied Physics Letters 95,2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] "Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces2009
- Author(s)
  Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, . K. Matsuyama, and M. Miyao
- Journal Title
  
  J. Appl. Phys
  
  Volume: Vol.105, No.7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces2009
- Author(s)
  Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda,. K. Matsuyama, M. Miyao
- Journal Title
  
  Journal of Applied Physics Vol.105,No.7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Journal Title
  
  電子情報通信学会信学技報
  
  Pages: 19-21
- NAID
  110007227256
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization2009
- Author(s)
  K.Toko, I.Nakao, T.Sadoh, T.Noguchi, M.Miyao
- Journal Title
  
  Solid-State Electronics Vol.53
  
  Pages: 1159-1164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures2009
- Author(s)
  T. Sadoh, H. Ohta, M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics 48,3
- NAID
  210000066423
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO 2 Structures2009
- Author(s)
  T.Sadoh, H.Ohta, M.Miyao
- Journal Title
  
  Japanese Journal of Applied Physics Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_<1-x>Ge_x(x : 0-1)on Insulating Substrate2009
- Author(s)
  M.Kurosawa, Y. Tsumira, T. Sadoh, and M. Miyao
- Journal Title
  
  Jpn. J. Appl. Phys Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009
- Author(s)
  M. Kurosawa, N. Kawabata, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Letters 95,13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009
- Author(s)
  M.Kurosawa, N.Kawabata, T.Sadoh, M.Miyaob
- Journal Title
  
  Applied Physics Letters Vol.95, No.13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si <1-x>Ge x (x : 0-1) on Insulating Substrate2009
- Author(s)
  M.Kurosawa, Y.Tsumira, T.Sadoh, M.Miyao
- Journal Title
  
  Japanese Journal of Applied Physics Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2009
- Author(s)
  K.Toko, T.Sadoh, M.Miyao
- Journal Title
  
  Japanese Journal of Applied Physics Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate2009
- Author(s)
  M. Kurosawa, Y. Tsumira, T. Sadoh, M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics 48,3
- NAID
  210000066421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier2009
- Author(s)
  Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Letters Vol.94,No.18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009
- Author(s)
  T. Sadoh, T. Tanaka, Y. Ohta, K. Toko, M. Miyao
- Journal Title
  
  電子情報通信学会信学技報
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Defect-free single-crystal Ge island arrays on insulator by rapid-melting growth combined with seed-positioning technique2009
- Author(s)
  K. Toko, T. Sakane, T. Tanaka, T. Sadoh, M. Miyao
- Journal Title
  
  Applied Physics Letters 95,11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation2009
- Author(s)
  T.Tanaka, T.Sadoh, M.Kurosawa, M.Tanaka, M.Yamaguchi, S.Suzuki, T.Kitamura, M.Miyao
- Journal Title
  
  Applied Physics Letters Vol.95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2009
- Author(s)
  K. Toko, T. Sadoh, M. Miyao
- Journal Title
  
  Japanese Journal of Applied Physics 48,3
- NAID
  210000066426
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Indentation-induced low-temperature solid-phase crystallization of Si <1-x>Ge x (x : 0-1) on insulator2009
- Author(s)
  K.Toko, T.Sadoh, M.Miyao
- Journal Title
  
  Applied Physics Letters Vol.94, No.19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization2009
- Author(s)
  K. Toko, I. Nakao, T. Sadoh, T. Noguchi, M. Miyao
- Journal Title
  
  Solid-State Electronics 53
  
  Pages: 1159-1164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2009
- Author(s)
  K. Toko, T. Sadoh, and M. Miyao
- Journal Title
  
  Jpn. J. Appl. Phys Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures2009
- Author(s)
  M. Kurosawa, Y. Tsumura, T. Sadoh and M. Miyao
- Journal Title
  
  J. Korean Phys. Soc Vol.54, No.1
  
  Pages: 451-454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO_2 Structures2009
- Author(s)
  T. Sadoh, H. Ohta, and M. Miyao
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.48, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Journal Title
  
  電子情報通信学会信学技報 SDM2009-5
  
  Pages: 19-21
- NAID
  110007227256
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier2009
- Author(s)
  Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: Vol.94, No.18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656005
[Journal Article] Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation2008
- Author(s)
  M.Tanaka, T.Tanaka, T.Sadoh, J.Morioka, T.Kitamura, M.Miyao
- Journal Title
  
  ECS Transactions Vol.16 No.10
  
  Pages: 189-192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008
- Author(s)
  T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M.Miyao
- Journal Title
  
  ECS Transactions Vol.16 No.10
  
  Pages: 219-222
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence2008
- Author(s)
  Dong Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura
- Journal Title
  
  Thin Solid Films 517,1
  
  Pages: 31-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Comprehensive study of low temperature (<1000°C) oxidation process in SiGe/SOI structures2008
- Author(s)
  M.Tanaka, T.Ohka, T.Sadoh, M.Miyao
- Journal Title
  
  Thin Solid Films Vol.517, No.1
  
  Pages: 251-253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Low- Temperature Molecular Beam Epitaxy of a Ferromagnetic Full-Heusler Alloy Fe2MnSi on Ge(111)2008
- Author(s)
  K. Ueda, K. Hamaya, K. Yamamoto, Y. Ando, T. Sadoh, Y. Maeda, and M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.93, No.11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Epitaxial Ferromagnetic Fe3Si/ Si(111) Structures with High-Quality Heterointerfaces2008
- Author(s)
  K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, and M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.93, No.13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] 次世代TFTに向けたa-Ge/石英の低温固相成長2008
- Author(s)
  中尾勇兼, 都甲薫, 野口隆, 佐道泰造
- Journal Title
  
  電子情報通信学会信学技報 SDM2008-17
  
  Pages: 83-88
- NAID
  110006792721
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate2008
- Author(s)
  K. Ueda, T. Sadoh, Y. Ando, T. Jonishi, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  Thin Solid Films Vol.517, No.1
  
  Pages: 422-424
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Abnormal oxidation characteristics of SiGe/SOI structures depending on piled-up Ge fraction at SiO2/SiGe interface2008
- Author(s)
  M. Tanaka, T. Ohka, T. Sadoh, M. Miyao
- Journal Title
  
  J. Appl. Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008
- Author(s)
  K. Toko, H. Kanno, A. Kenjo, T. Sadoh T. Asano, M. Miyao
- Journal Title
  
  Solid-State Electronics 52,8
  
  Pages: 1221-1224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence2008
- Author(s)
  Dong Wang, H.Nakashima, M.Tanaka, T.Sadoh, M.Miyao, J.Morioka, T.Kitamura
- Journal Title
  
  Thin Solid Films Vol.517, No.1
  
  Pages: 31-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Comprehensive study of low temperature (<1000oC) oxidation process in SiGe/SOI structures2008
- Author(s)
  M. Tanaka, T. Ohka, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 517,1
  
  Pages: 251-253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Low-Temperature Molecular Beam Epitaxy of a Ferromagnetic Full-Heusler Alloy Fe2MnSi on Ge(111)2008
- Author(s)
  K. Ueda, K. Hamaya, K. Yamamoto, Y. Ando, T. Sadoh, Y. Maeda, M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.93,No.11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application2008
- Author(s)
  M. Miyao, K. Ueda, Y. Ando, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda
- Journal Title
  
  Thin Solid Films Vol.517,No.1
  
  Pages: 181-183
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application2008
- Author(s)
  Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  IEICE Transaction on Electronics Vol.E91-C,No.5
  
  Pages: 708-711
- NAID
  110006343819
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008
- Author(s)
  K.Toko, H.Kanno, A.Kenjo, T.Sadoh, T.Asano, M.Miyao
- Journal Title
  
  Solid-State Electronics Vol.52, No.8
  
  Pages: 1221-1224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method2008
- Author(s)
  M. Tanaka, A. Kenjo, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films 517,1
  
  Pages: 248-250
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H^+ irradiation-assisted Ge condensation method2008
- Author(s)
  M.Tanaka, A.Kenjo, T.Sadoh, M.Miyao
- Journal Title
  
  Thin Solid Films Vol.517, No.1
  
  Pages: 248-250
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si_<1-x>Ge_x with Whole Ge Fraction on Insulator2008
- Author(s)
  T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.47, No.3
  
  Pages: 1876-1879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application2008
- Author(s)
  M. Miyao , K. Ueda, Y. Ando, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda
- Journal Title
  
  Thin Solid Films Vol.517, No.1
  
  Pages: 181-183
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Epitaxial Ferromagnetic Fe3Si/Si(111) Structures with High-Quality Heterointerfaces2008
- Author(s)
  K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.93,No.13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008
- Author(s)
  T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, M. Miyao
- Journal Title
  
  ECS Transactions 16,10
  
  Pages: 219-222
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain2008
- Author(s)
  M. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao
- Journal Title
  
  Applied Surface Science 254,19
  
  Pages: 6226-6228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008
- Author(s)
  T.Sadoh, K.Toko, K.Ikeda, S.Hata, M.Itakura, H.Nakashima, M.Nishida, M.Miyao
- Journal Title
  
  ECS Transactions Vol.16, No.10
  
  Pages: 219-222
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain2008
- Author(s)
  M.Tanaka, T.Sadoh, J.Morioka, T.Kitamura, M.Miyao
- Journal Title
  
  Applied Surface Science Vol.254, No.19
  
  Pages: 6226-6228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560011
[Journal Article] 次世代TFTに向けたa-Ge/石英の低温固相成長2008
- Author(s)
  中尾勇兼, 都甲薫, 野口隆, 佐道泰造
- Journal Title
  
  電子情報通信学会信学技報
  
  Pages: 83-88
- NAID
  110006792721
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] 縁膜上における非晶質SiGeのインデント誘起固相成長2008
- Author(s)
  都甲薫, 佐道泰造, 宮尾正信
- Journal Title
  
  電気学会・電子材料研究会資料 EFM-08-29
  
  Pages: 31-34
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si_<1-x>Ge_x with Whole Ge Fraction on Insulator2008
- Author(s)
  T. Sadoh, et al.
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 1876-1879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate2008
- Author(s)
  K. Ueda, T. Sadoh, Y. Ando, T. Jonishi, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  Thin Solid Films Vol.517,No.1
  
  Pages: 422-424
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation2008
- Author(s)
  M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao
- Journal Title
  
  ECS Transactions 16,10
  
  Pages: 189-192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films2008
- Author(s)
  K. Ueda, M. Kumano, T. Sadoh, M. Miyao
- Journal Title
  
  Thin Solid Films Vol.517,No.1
  
  Pages: 425-427
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator2008
- Author(s)
  T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, M. Miyao
- Journal Title
  
  Jpn. J. Appl. Phys. 47,3
  
  Pages: 1876-1879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008
- Author(s)
  K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
- Journal Title
  
  Solid-State Electronics Vol.52, No.8
  
  Pages: 1221-1224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor: Y.2008
- Author(s)
  Kishi, M. Kumano, K. Ueda, T. Sadoh, M. Miyao
- Journal Title
  
  ECS Transactions Vol.16No.10
  
  Pages: 277-280
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] 縁膜上における非晶質SiGeのインデント誘起固相成長2008
- Author(s)
  都甲薫, 佐道泰造宮尾正信
- Journal Title
  
  電気学会・電子材料研究会資料
  
  Pages: 31-34
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application2008
- Author(s)
  K. Ueda, Y. Ando, K. Yamamoto, M. Kumano, K. Hamaya, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  ECS Transactions Vol.16No.10
  
  Pages: 273-276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge2008
- Author(s)
  K. Ueda, Y. Ando, M. Kumano, T. Sadoh, Y. Maeda, M. Miyao
- Journal Title
  
  Applied Surface Science Vol.254,No.19
  
  Pages: 6215-6217
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成~電界印加効果、触媒種効果~2008
- Author(s)
  萩原貴嗣, 都甲薫, 佐道泰造
- Journal Title
  
  電子情報通信学会信学技報 SDM2008-17
  
  Pages: 101-105
- NAID
  110006792724
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成~電界印加効果、触媒種効果~2008
- Author(s)
  萩原貴嗣, 都甲薫, 佐道泰造
- Journal Title
  
  電子情報通信学会信学技報
  
  Pages: 101-105
- NAID
  110006792724
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Ni-imprint induced solid-phase crystallization in Sil-xGex(x:0-1) on insulator2007
- Author(s)
  K.ToKo, H. Kanno, A. Kenjo, T.Sadoh, T.Asano and M.Miyao
- Journal Title
  
  Appl.Phys.Lett. 91
- Data Source
  KAKENHI-PROJECT-18360025
[Journal Article] Ge-channel thin-film transistor with Schottky source/drain fabricated by low-temperature processing2007
- Author(s)
  T.Sadoh, et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 46(3B)
  
  Pages: 1250-1253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] 強磁性体シリサイド/半導体積層構造の低温エピタキシャル成長-Si系スピントロノクスの創出を目指して-2007
- Author(s)
  佐道泰造, 熊野守, 安藤裕一郎, 上田公二, 権丈淳, 宮尾正信
- Journal Title
  
  九州大学中央分析センター報告第25号
  
  Pages: 7-11
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Effect of Fe/Si Ratio on Epitaxial Growth of Fe3Si on Ge Substrate2007
- Author(s)
  M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  ECS Transactions Vol.11,No.6
  
  Pages: 481-486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film2007
- Author(s)
  Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, M. Miyao
- Journal Title
  
  ECS Transactions 11,6
  
  Pages: 395-402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Ni-Imprint Induced Solid-Phase Crystallization in Si_<1-x>Ge_x(x : 0-1) on Insulator2007
- Author(s)
  K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
- Journal Title
  
  Appl. Phys. Lett Vol.91, No.4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application2007
- Author(s)
  T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  ECS Transactions Vol.11,No.6
  
  Pages: 473-480
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Fe3Si/Ge(111)ヘテロエピタキシャル成長の軸配向性の評価2007
- Author(s)
  平岩佑介, 安藤裕一郎, 熊野守, 上田公二, 佐道泰造, 宮尾正信, 鳴海一雅, 前田佳均
- Journal Title
  
  電子情報通信学会信学技報 SDM2007-230
  
  Pages: 35-38
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Catalytic Effect of Ni in Crystallization of Amorphous SiGe Films by Imprint Technique2007
- Author(s)
  K.Toko, H. Kanno, A. Kenjo, T.Sadoh, T.Asano and M.Miyao
- Journal Title
  
  Dig.Tech.Papers, The 14th Int.Workshop on Active-Matrix Flatpanel Displays and Devices
  
  Pages: 275-278
- Data Source
  KAKENHI-PROJECT-18360025
[Journal Article] Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application2007
- Author(s)
  Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao
- Journal Title
  
  電子情報通信学会信学技報 ED2007-101
  
  Pages: 221-224
- NAID
  110006343819
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low-Temperature Epitaxial Growth of [Fe_3Si/SuGe]_n(n=1-2) Multi-Layered Structures for Spintronics Application2007
- Author(s)
  T., Sadoh, et. al.
- Journal Title
  
  ECS Transactions 11
  
  Pages: 473-480
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Axial orientation of molecular-beam-epitaxy-grown Fe3Si/Ge hybrid structures and its degradation2007
- Author(s)
  Y. Maeda, T. Jonishi, K. Narumi, Y. Ando, K. Ueda, M. Kumano, T. Sadoh, M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.91,No.17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Formation of Fe3Si/Ge/Fe3Si Multi-Layer by Double Heteroepitaxy on High Quality Fe3Si/Ge Substrate for Spintronics Application2007
- Author(s)
  K. Ueda, Y. Ando, M. Kumano, T. Sadoh, Y. Maeda, M. Miyao
- Journal Title
  
  ECS Transactions Vol.11,No.6
  
  Pages: 487-492
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain2007
- Author(s)
  T. Sadoh, H. Kamizuru, A. Kenjo, M. Miyao
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1181-1184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film2007
- Author(s)
  Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao
- Journal Title
  
  ECS Transactions Vol.11, No.6
  
  Pages: 395-402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] Ge-channel thin-film transistor with Schottky source/drain fabricated by low-temperature processing2007
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Jpn. J. Appl. Phys. 46(3B)
  
  Pages: 1250-1253
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] High-Performance Poly-Ge Thin-Film Transistor with Nice Schottky Source/Drain2007
- Author(s)
  T. Sadoh, et. al.
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1181-1184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360011
[Journal Article] Influence of Substrate Orientation on Low-Temperature Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si2007
- Author(s)
  K. Ueda, R. Kizuka, H. Takeuchi, A. Kenjo, T. Sadoh,., M. Miyao
- Journal Title
  
  Thin Solid Films Vol.515,No.22
  
  Pages: 8250-8253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain2007
- Author(s)
  T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao
- Journal Title
  
  Materials Science Forum Vol.561-565
  
  Pages: 1181-1184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560316
[Journal Article] スピントロニクス用強磁性シリサイド(Fe3Si)/SiGeの低温形成2006
- Author(s)
  佐道泰造, 上田公二, 熊野守, 宮尾正信
- Journal Title
  
  電気材料研究会資料 EFM-06-17
  
  Pages: 11-14
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006
- Author(s)
  T.Sadoh, et al.
- Journal Title
  
  Appl.Phys.Lett. 89(19)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] Epitaxial Growth of Ferromagnetic Silicide Fe_3Si on Si (111) Substrate2006
- Author(s)
  T.Sadoh et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 45(4B)
  
  Pages: 3598-3600
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Appl. Phys. Lett. 89(19)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] Epitaxial Growth of Ferromagnetic Silicide Fe_3Si on Si (111) Substrate2006
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Jpn. J. Appl. Phys. 45(4B)
  
  Pages: 3598-3600
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe_3Si on Ge2006
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Appl. Phys. Lett. 89(18)
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] スピントロニクス用強磁性シリサイド (Fe_3Si)/SiGeの低温形成2006
- Author(s)
  佐道他
- Journal Title
  
  電気学会・電気材料研究会資料 EFM-06-17
  
  Pages: 11-14
- NAID
  10018312331
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Low-temperature formation (<500℃) of poly-Ge thin-film transistor with NiGe Schottky source/drain2006
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Applied Physics Letters 89(19)
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] Epitaxial Growth of Ferromagnetic Silicide Fe_3Si on Si(111) Substrate2006
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Japanese Journal of Applied Physics 45(4B)
  
  Pages: 3598-3600
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge2006
- Author(s)
  T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, M. Miyao
- Journal Title
  
  Appl. Phys. Lett. Vol.89,No.18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063018
[Journal Article] Molecular Beam Epitaxy of Fe_3Si Film on Si Substrate2005
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Tech. Dig. 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices
  
  Pages: 27-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Si基板上におけるFe_3Si薄膜のエピタキシャル成長と評価2005
- Author(s)
  佐道泰造他
- Journal Title
  
  電子情報通信学会技報 2005-13
  
  Pages: 23-26
- NAID
  10015723880
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Positon Control of Nucleation in Solid-Phase Crystallization of a-Si/SiO_2 by Ge Layer Insertion2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  MRS Symp.Proc. 796
  
  Pages: 39-43
- Data Source
  KAKENHI-PROJECT-15360169
[Journal Article] Enhanced crystal nucleation in a-Si on SiO_2 by local Ge doping2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Thin Solid Films 464-465
  
  Pages: 99-102
- Data Source
  KAKENHI-PROJECT-15360169
[Journal Article] Strain in β-FeSi_2 modulation by Ge segregation in solid-phase growth of [a-Si/a- FeSiGe]_n stacked structure2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Applied Surface Science 237
  
  Pages: 146-149
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Positon control of Nucleation in Solid-Phase Crystallization of a-Si/SiO2 by Ge Layer Insertion2004
- Author(s)
  T.Sadoh et al.
- Journal Title
  
  MRS Symp.Proc. Vol.796
  
  Pages: 39-43
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360169
[Journal Article] Lattice Strain Engineering of β-FeSi_2 by Ge Doping2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Tech. Dig. 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices
  
  Pages: 243-246
- NAID
  110003175625
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Formation of SiGe/β-FeSi_2 Superstructures from Amorphous Si/FeSiGe Layers2004
- Author(s)
  T.Sadoh et al.
- Journal Title
  
  Thin Solid Films 461
  
  Pages: 77-80
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Ge-dependent Morphological Change in Poly-SiGe Formed by Ni-mediated Crystallization2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Applied Surface Science 224(1-4)
  
  Pages: 227-230
- Data Source
  KAKENHI-PROJECT-16360010
[Journal Article] Formation of SiGe/β-FeSi_2 Superstructures from Amorphous Si/FeSiGe Layers2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Thin Solid Films 461
  
  Pages: 77-80
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Formation of β-FeSi_<2-x>Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n, Multilayered Structure2004
- Author(s)
  T.Sadoh et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43(4B)
  
  Pages: 1879-1881
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Formation of β-FeSi_<2-x> Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Jpn.J.Appl.Phys. 43(4B)
  
  Pages: 1879-1881
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Strain in β-FeSi_2 modulation by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe]_n stacked structure2004
- Author(s)
  T.Sadoh 他
- Journal Title
  
  Applied Surface Science 237
  
  Pages: 146-149
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Journal Article] Strain in β-FeSi_2 modulation by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe]_n stacked structure2004
- Author(s)
  T.Sadoh et al.
- Journal Title
  
  Applied Surface Science 2372
  
  Pages: 146-149
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560277
[Presentation] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing2023
- Author(s)
  Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh
- Organizer
  2023 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Effects of Capping Layers on Solid-Phase Crystallization of Sn-Doped Ge Thin Films on Insulators2023
- Author(s)
  Ryu Hashimoto, Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh
- Organizer
  14th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Growth Characteristics of Sn-Doped Si Thin-Filmson Insulator2023
- Author(s)
  Yuki Hanafusa, Kota Okamoto, and Taizoh. Sadoh
- Organizer
  2023 Asia-Pacific Workshop on Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] 基板に成膜したアモルファスGe薄膜への低エネルギー電子ビーム照射による爆発的結晶化2023
- Author(s)
  坂元響，仲村龍介，柳澤淳一，佐道泰造
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23083
[Presentation] Ultra-High Concentration Doping by Excimer Laser Annealing Using Solid-Diffusion Source2023
- Author(s)
  Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh
- Organizer
  2023 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] 絶縁膜上におけるSn添加Ge薄膜の固相成長とTFT応用2023
- Author(s)
  佐道泰造
- Organizer
  第４１回シリサイド系半導体研究会
- Invited
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] 絶縁膜上におけるIV族系半導体薄膜の低温固相成長2023
- Author(s)
  古賀泰志郎, 花房佑樹, 茂藤健太, 山本圭介, 佐道泰造
- Organizer
  薄膜材料デバイス研究会第20回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Improved Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Post-Annealing for Thin-Film Transistor Application2023
- Author(s)
  T. Koga, T. Nagano, K. Moto, K. Yamamoto, and T. Sadoh
- Organizer
  30th International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Sn-Doped Si Thin-Films on Insulator by Solid-Phase Crystallization2023
- Author(s)
  Y. Hanafusa, K. Okamoto, and T. Sadoh
- Organizer
  30th International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Grain Enlargement of Ultrathin Si Films on Insulators by Sn-Doping2023
- Author(s)
  Yuki Hanafusa, Kota Okamoto, and Taizoh Sadoh
- Organizer
  2023 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Formation of pn Junctions by Doping Using Excimer Laser Annealing2023
- Author(s)
  Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh
- Organizer
  The 12th Asia-Pacific Laser Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget2023
- Author(s)
  R. Aoki, K. Katayama, D. Nakamura, H. Ikenoue, and T. Sadoh
- Organizer
  30th International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Improved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (< 50 nm) on Insulator by a-Si Capping2022
- Author(s)
  Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Solid-Phase Crystallization Characteristics of SiSn Thin Film on Insulating Substrates2022
- Author(s)
  Kota Okamoto, Tomohiro Kosugi, and Taizoh Sadoh
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Neを用いてガラス上にスパッタ堆積したInSb膜のRTAによる結晶化2022
- Author(s)
  霜田音吉, コスワッタゲーチャリットジャヤナダ, 野口隆, 梶原隆司, 佐道泰造, 岡田竜弥
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] (Invited) Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultra-thin Films for Advanced TFT2022
- Author(s)
  Taizoh Sadoh, Takaya Nagano, Taishiro Koga, Kenta Moto, and Keisuke Yamamoto
- Organizer
  The 29th International Display Workshops
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] 界面変調Sn添加Ge極薄膜/絶縁基板の固相成長特性2022
- Author(s)
  永野貴弥, 原龍太郎, 千代薗修典, 佐道泰造
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Improved Carrier Mobility of Sn-Doped Ge Ultrathin (<50nm) Films on Insulator by a-Si Capping in Solid-Phase Crystallization2022
- Author(s)
  Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh
- Organizer
  2022 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Ultrathin Large Grain Si Films on Insulator by Solid-Phase Crystallization Combined with Sn-Doping2022
- Author(s)
  Kota Okamoto, Tomohiro Kosugi, and Taizoh Sadoh
- Organizer
  2022 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Solid-Phase Crystallization Characteristics of Interface-Modulated Sn-Doped Ge Thin Films on Insulator with Capping2022
- Author(s)
  Takaya Nagano, Ryutaro Hara, and Taizoh Sadoh
- Organizer
  29th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04186
[Presentation] Effect of Sn doping to Solid-Phase Crystallization of Si thin film on Insulator2021
- Author(s)
  Tomohiro Kosugi, Kota Okamoto, and Taizoh Sadoh
- Organizer
  2021 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] High Carrier Mobility of Sn-Doped Ge Ultrathin Films on Insulator by Capping-Enhanced Solid-Phase Crystallization2021
- Author(s)
  Ryutaro Hara, Masanori Chiyozono, and Taizoh Sadoh
- Organizer
  2021 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Crystallization of SiN Capped InSb Films on Glass by Rapid Thermal Annealing2021
- Author(s)
  Otokichi Shimoda, Yuki Sawama, C. J. Koswaththage, Takashi Noguchi, Takashi Kajiwara, Taizoh Sadoh, and Tatsuya Okada
- Organizer
  The 21st International Meeting on Information Display
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SiSn on Insulator2021
- Author(s)
  K. Okamoto, T. Kosugi, and T. Sadoh
- Organizer
  28th International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] レーザープロセスを用いたIV族系半導体の結晶成長とドーピング2021
- Author(s)
  佐道泰造, 片山慶太, 池上浩, 白谷正治
- Organizer
  応用物理学会シリコンテクノロジー分科会第231回研究集会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換成長法によるn型GeSn低温形成2021
- Author(s)
  河原聡, 劉森, 佐道泰造
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Low-Temperature Crystallization of Group-IV Semiconductors on Insulator for Advanced Electronics2021
- Author(s)
  Taizoh SADOH
- Organizer
  4th International Conference on Circuits, Systems and Simulation & 4th International Conference on Consumer Electronics and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] a-SiキャップによるSn添加Ge極薄膜/絶縁基板のキャリア移動度向上2021
- Author(s)
  原龍太郎, 千代薗修典, 佐道泰造
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換法によるSn添加n型Geの低温形成2021
- Author(s)
  河原聡, 劉森, 佐道泰造
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 急速熱処理法によるInSb薄膜/ガラス基板の結晶成長2021
- Author(s)
  梶原隆司, 霜田音吉, 岡田竜弥, チャリットジャヤナダコスワッタゲー, 野口隆, 佐道泰造
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] a-Siキャップ付加による界面変調Sn添加Ge極薄膜/絶縁基板のキャリア移動度向上2021
- Author(s)
  原龍太郎, 千代薗修典, 茂藤健太, 山本圭介, 佐道泰造
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 界面変調固相成長法で形成したSn添加多結晶Ge極薄膜/絶縁基板の電気特性に与えるアニール効果2021
- Author(s)
  千代薗修典, 原龍太郎, 佐道泰造
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 絶縁基板上におけるSi薄膜の固相成長に与えるSn添加効果2021
- Author(s)
  小杉智浩, 岡本紘汰, 佐道泰造
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization2021
- Author(s)
  R. Hara, M. Chiyozono, and T. Sadoh
- Organizer
  28th International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換成長法によるSiGe/絶縁膜基板の低温成長2021
- Author(s)
  永野貴弥，河原聡，劉森，佐道泰造
- Organizer
  2021年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 高Sn濃度SiSn薄膜/絶縁膜の低温固相成長特性の膜厚依存性2021
- Author(s)
  岡本紘汰, 小杉智浩, 佐道泰造
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi触媒によるn型Ge薄膜の低温形成2020
- Author(s)
  劉森, 公祥生, 佐道泰造
- Organizer
  第73回電気・情報関係学会九州支部連合大会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Sn添加Ge極薄膜/絶縁基板の界面変調型固相成長に与えるa-Si キャップ効果2020
- Author(s)
  原龍太郎, 千代薗修典, 佐道泰造
- Organizer
  2020年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Low-Temperature Solid-Phase Crystallization of SiSn on Insulator - Effects of Sn Concentration and Film Thickness -2020
- Author(s)
  Tomohiro Kosugi, Kazuki Yagi, and Taizoh Sadoh
- Organizer
  2020 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Improved Carrier Mobility of Sn-Doped Ge Thin-Films (50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning2020
- Author(s)
  M. Chiyozono, X. Gong, and T. Sadoh
- Organizer
  27th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 絶縁基板上におけるSiSn薄膜の低温固相成長特性2020
- Author(s)
  小杉智浩, 八木和樹, 佐道泰造
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 界面変調型固相成長法で形成したSn添加多結晶Ge極薄膜/絶縁基板の粒界障壁解析2020
- Author(s)
  千代薗修典, 公祥生, 徐暢, 佐道泰造
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換成長法によるGeSn/絶縁基板の低温形成2020
- Author(s)
  河原聡, 劉森, 佐道泰造
- Organizer
  2020年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation2020
- Author(s)
  Yuta Tan, Daiki Tsuruta, Taizoh Sadoh
- Organizer
  2020 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization2020
- Author(s)
  Masanori Chiyozono, Xiangsheng Gong, Taizoh Sadoh
- Organizer
  2020 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 高Sn濃度GeSn/絶縁基板の低温固相成長(～200℃)に与える下地変調効果2020
- Author(s)
  丹優太, 鶴田太基, 佐道泰造
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Growth Characteristics of SiSn on Insulator by Solid Phase Crystallization2020
- Author(s)
  Tomohiro Kosugi, Kazuki Yagi, Taizoh Sadoh
- Organizer
  5th Asian Applied Physics Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換成長法によるn型Ge/絶縁基板の低温形成2020
- Author(s)
  劉森, 公祥生, 高洪ミョウ, 佐道泰造
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization2020
- Author(s)
  T. Kosugi, K. Yagi, T. Sadoh
- Organizer
  27th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 界面変調によるSn添加極薄Ge薄膜/絶縁基板のキャリア移動度向上2019
- Author(s)
  公祥生, 徐暢, 佐道泰造
- Organizer
  電子情報通信会九州支部　学生会講演会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] GeSn/絶縁基板の低温固相成長に与える下地変調効果2019
- Author(s)
  丹優太，鶴田太基，公祥生，佐道泰造
- Organizer
  半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] 非晶質シリコン層挿入によるスズ添加ゲルマニウム薄膜の特性向上2019
- Author(s)
  公祥生, 徐暢, 佐道泰造
- Organizer
  電気・情報関係学会九州支部連合会
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Low-Temperature Bi-Induced Layer Exchange Crystallization for Formation of n-Type Ge on Insulator2019
- Author(s)
  Xiangsheng Gong, Sen Liu, Hongmiao Gao, and Taizoh Sadoh
- Organizer
  2019 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] Bi誘起層交換法によるn型Ge/絶縁基板の低温成長2019
- Author(s)
  劉森,公祥生, 高洪ミョウ, 佐道泰造
- Organizer
  半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] High Carrier Mobility Sn-Doped Ge Thin-Films (≦50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature2019
- Author(s)
  Xiangsheng Gong, Chang Xu, and Taizoh Sadoh
- Organizer
  2019 International Conference on Solid State Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21976
[Presentation] (Invited) Low-Temperature Crystallization of Group-IV Semiconductors on Insulator Using Catalysis2018
- Author(s)
  T. Sadoh, M. Miyao, and I. Tsunoda
- Organizer
  International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization2017
- Author(s)
  H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh
- Organizer
  International Workshop on Junction Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] Thickness-Dependent Substitutional-Sn-Concentration in GeSn-on-Insulator by Weak- Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (180°C)2017
- Author(s)
  T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] （招待講演）触媒成長法を用いたIV族半導体/絶縁膜の低温形成－高性能フレキシブル・エレクトロニクスの創出を目指して－2017
- Author(s)
  佐道泰造，宮尾正信，角田功
- Organizer
  応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization2017
- Author(s)
  Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh
- Organizer
  International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization of GeSn-on-Insulator at Low-Temperature (180°C) - Thickness-Dependent High Substitutional-Sn-Concentration -2017
- Author(s)
  T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh
- Organizer
  International Workshop on Junction Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization2017
- Author(s)
  H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator2017
- Author(s)
  H. Gao, R. Aoki, M. Miyao, and T. Sadoh
- Organizer
  International Conference on Solid-State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C)2017
- Author(s)
  T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao, and T. Sadoh
- Organizer
  International Conference on Solid-State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] 18.Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding2016
- Author(s)
  R. Matsumura, K. Moto, Y. Kai, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2016
- Place of Presentation
  Tsukuba
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] 21.Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing2016
- Author(s)
  K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science, PRiME 2016& 230th ECS Meeting
- Place of Presentation
  Honolulu
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14234
[Presentation] Low Temperature (~150oC) Au-Induced Lateral Growth of a-GeSn on Insulator2016
- Author(s)
  T. Sakai, R. Matsumura , T. Sadoh and M. Miyao
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of GeSn Crystals with High Sn Concentration on Insulating Substrate by Pulsed Laser-Annealing2016
- Author(s)
  K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue and M. Miyao
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Thickness-Controlled Low-Temperature (~380°C) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm2/Vs)2016
- Author(s)
  K. Moto, T. Sadoh, Y. Kai, R. Matsumura, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2016
- Place of Presentation
  Tsukuba
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics2016
- Author(s)
  T. Sadoh, R. Aoki, T. Tanaka, J. H. Park, and M. Miyao
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science, PRiME 2016& 230th ECS Meeting
- Place of Presentation
  Honolulu
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate2015
- Author(s)
  K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, and M.u Miyao
- Organizer
  2015 International Electron Devices and Materials Symposium
- Place of Presentation
  Tainan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Melting Sn Induced Low-Temperature Seeding for Position Controlled Giant GeSn Crystal Arrays2015
- Author(s)
  Y. Kai, H. Chikita, R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Orientation-controlled large-grain SiGe on insulator by gold-induced crystallization at low-temperature for flexible opto-electronics2015
- Author(s)
  T. Sadoh, J.-H. Park R. Aoki, M. Miyao
- Organizer
  The 11th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Fukuoka
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≦300℃)2015
- Author(s)
  R. Aoki, J-H Park, M. Miyao, and T. Sadoh
- Organizer
  2015 International Electron Devices and Materials Symposium
- Place of Presentation
  Tainan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn2015
- Author(s)
  T. Sadoh, A. Ooato, J.-H. Park, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2015
- Place of Presentation
  Sapporo
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] High Sn-Concentration (~8%) GeSn by Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge2015
- Author(s)
  T. Sadoh, A. Ooato, J.-H. Park, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] High Sn-Concentration (~8%) GeSn by Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge2015
- Author(s)
  T. Sadoh, A. Ooato, J.-H. Park, and M. Miyao
- Organizer
  the 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Motreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Gold-induced low-temperature (≦300℃) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics2015
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, M. Miyao
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Low temperature solid phase crystallization of GeSn on insulator for flexible electronics2015
- Author(s)
  R. Matsumura, M. Sasaki, H. Chikita, M. Miyao, T. Sadoh
- Organizer
  The 11th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Fukuoka
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Gold-induced low-temperature (≦300℃) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics2015
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, M. Miyao
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Low-Temperature (≦300℃) Formation of Orientation-Controlled Large-Grain (≧10μm) Ge-Rich SiGe on Insulator by Gold-Induced Crystallization2015
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400°C)2015
- Author(s)
  T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Crystallization of GeSn on insulating substrates by lateral solid-phase crystallization technique2015
- Author(s)
  R. Matsumura, K. Moto, H. Chikita, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  34th Electronic Materials Symposium
- Place of Presentation
  Shiga
- Year and Date
  2015-07-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn2015
- Author(s)
  T. Sadoh, A. Ooato, J.-H. Park, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2015
- Place of Presentation
  Sapporo
- Year and Date
  2015-08-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≦300℃)2015
- Author(s)
  R. Aoki, J-H Park, M. Miyao, and T. Sadoh
- Organizer
  2015 International Electron Devices and Materials Symposium
- Place of Presentation
  Tainan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Gold-induced low-temperature (≦300℃) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics2015
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, M. Miyao
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≦300℃)2015
- Author(s)
  R. Aoki, J-H Park, M. Miyao, and T. Sadoh
- Organizer
  2015 International Electron Devices and Materials Symposium
- Place of Presentation
  Tainan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03976
[Presentation] Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≦400℃)2015
- Author(s)
  T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao
- Organizer
  the 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Laser-Anneal Seeded Solid-Phase Crystallization for　Ultra-Low Temperature Growth of Germanium-Tin2015
- Author(s)
  R. Matsumura, K. Moto, H. Chikita, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  24th International Materials Research Congress
- Place of Presentation
  Cancun
- Year and Date
  2015-08-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition2015
- Author(s)
  R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  24th International Materials Research Congress
- Place of Presentation
  Cancun
- Year and Date
  2015-08-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Sn-precipitation-suppressed solid-phase epitaxy of GeSn on Ge at low-temperatures (~150°C)2015
- Author(s)
  T. Sadoh, A. Ooato, J. -H. ParkH. M. Miyao
- Organizer
  The 11th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Fukuoka
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Low-Temperature (≦300℃) Formation of Orientation-Controlled Large-Grain (≧10μm) Ge-Rich SiGe on Insulator by Gold-Induced Crystallization2015
- Author(s)
  T. Sadoh, J.-H. Park, R. Aoki, and M. Miyao
- Organizer
  the 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Thickness dependent solid phase crystallization of amorphous GeSn on insulating substrates2015
- Author(s)
  R. Matsumura, M. Sasaki, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Quasi-Single Crystal SiGe on Insulator by Au-Induced Crystallization for Flexible Electronics2015
- Author(s)
  T. Sadoh, J-H Park, R. Aoki, and M. Miyao
- Organizer
  The 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Kyoto
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Orientation-controlled large-grain SiGe on insulator by gold-induced crystallization at low-temperature for flexible opto-electronics2015
- Author(s)
  T. Sadoh, J.-H. Park R. Aoki, M. Miyao
- Organizer
  The 11th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Fukuoka
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Sn-precipitation-suppressed solid-phase epitaxy of GeSn on Ge at low-temperatures (~150°C)2015
- Author(s)
  T. Sadoh, A. Ooato, J. -H. ParkH. M. Miyao
- Organizer
  The 11th International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Fukuoka
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Ultra-low temperature (~180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding2015
- Author(s)
  R. Matsumura, K. Moto, Y. Kai, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth2015
- Author(s)
  R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  2015 International Electron Devices and Materials Symposium
- Place of Presentation
  Tainan
- Year and Date
  2015-11-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding2015
- Author(s)
  R. Matsumura, H. Chikita, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Non-thermal equilibrium formation of Ge1-xSnx (0≦x≦0.2) crystals on insulator by pulsed laser annealing2015
- Author(s)
  K. Moto, R. Matsumura, H. Chikita, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Quasi-Single Crystal SiGe on Insulator by Au-Induced Crystallization for Flexible Electronics2015
- Author(s)
  T. Sadoh, J-H Park, R. Aoki, and M. Miyao
- Organizer
  The 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Kyoto
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding2015
- Author(s)
  R. Matsumura, K. Moto, Y. Kai1, T. Sadoh, H. Ikenoue, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2015
- Place of Presentation
  Sapporo
- Year and Date
  2015-08-27
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate2014
- Author(s)
  R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] (Invited) Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low -Temperature Metal-Induced Crystallization2014
- Author(s)
  T. Sadoh, J.-H. Park, and M. Miyao
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Invited
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Influences of Sn on low-temperature crystallization of a-GeSn mixed or a-Ge/Sn stacked layer on crystal substrate2014
- Author(s)
  H. Chikita, R. Matsumura, Y. Kinoshita, A. Ooato, T. Sadoh and M. Miyao
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate2014
- Author(s)
  R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films2013
- Author(s)
  Y. Kinoshita, Y. Tojo, R. Matsumura, T. Sadoh, T. Nishimura, and M. Miyao
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Recent Progress of Rapid- Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator2013
- Author(s)
  T. Sadoh and M. Miyao
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Invited
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator2013
- Author(s)
  R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
- Organizer
  The 17th International Conference on Crystal Growth and Epitaxy, ICCGE-17
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid -Melting Growth2013
- Author(s)
  Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Narrowing-Induced Orientation-Stabilization in Rapid-Melting Growth of Ge-on- Insulator2013
- Author(s)
  S. Muta, M. Anisuzzaman, A.M.Hashim, and T. Sadoh
- Organizer
  International Conference in Asia 2013, IUMRS-ICA
- Place of Presentation
  Bangalore, India
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn /Si(100) Structure2013
- Author(s)
  H. Chikita, R. Matsumura, Y. Tojo, Y. Kinoshita, T. Sadoh, and M. Miyao
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGe2013
- Author(s)
  H. Chikita, R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  The Electrochemical Society, 224th ECS Meeting
- Place of Presentation
  San Fransisco, USA
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] (Invited) Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth2013
- Author(s)
  M. Miyao, R. Matsumura, M. Kurosawa, K. Toko, and T. Sadoh
- Organizer
  International Conference on Solid State Devices and Materials 2013
- Place of Presentation
  福岡
- Invited
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator2013
- Author(s)
  T. Sadoh
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  仙台
- Invited
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid -Melting-Growth2013
- Author(s)
  R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth2013
- Author(s)
  R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2013, SSDM2013
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] (Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics2013
- Author(s)
  T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
- Organizer
  The Electrochemical Society, 224th ECS Meeting
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator2013
- Author(s)
  T. Sadoh
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Invited
- Data Source
  KAKENHI-PROJECT-22360127
[Presentation] High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature -Induced-Melting Growth2013
- Author(s)
  Y. Kinoshita, R. Matsumura, T. Sadoh, T. Nishimura and M. Miyao
- Organizer
  The Electrochemical Society, 224th ECS Meeting
- Place of Presentation
  San Fransisco, USA
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of Orientation-Controlled Thin (~50 nm) Ge(111)-on-Insulator by Rapid- Melting Growth Combined with Narrow-Striping2013
- Author(s)
  S. Muta, M. Anisuzzaman, .M.Hashim, and T. Sadoh
- Organizer
  26th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Low-Temperature (～300℃) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing2013
- Author(s)
  H. Chikita, R. Matsumura, Y. Tojo, Y. Kinoshita, T. Sadoh, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2013
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator2013
- Author(s)
  R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, M. Miyao
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth2013
- Author(s)
  M. Miyao, R. Matsumura, M. Kurosawa, K. Toko, and T. Sadoh
- Organizer
  International Conference on Solid State Devices and Materials2013, SSDM2013
- Place of Presentation
  Fukuoka
- Invited
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth2013
- Author(s)
  R. Matsumura, R. Kato, Y. Tojo, T. Sadoh, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2013
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---2012
- Author(s)
  M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh
- Organizer
  PRiME 2012, ECS Pacific RIM Meeting 2012
- Place of Presentation
  awaii, U.S.A
- Data Source
  KAKENHI-PROJECT-22360127
[Presentation] Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth2012
- Author(s)
  R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
- Organizer
  PRiME 2012, ECS Pacific RIM Meeting 2012
- Place of Presentation
  Hawaii
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth2012
- Author(s)
  R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials 2012, SSDM2012
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process2012
- Author(s)
  R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  PRiME 2012, ECS Pacific RIM Meeting 2012
- Place of Presentation
  Hawaii
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] A u誘起層交換成長法による大粒径G e(1 1 1)結晶/絶縁膜の形成:界面酸化膜挿入効果2012
- Author(s)
  朴鍾.,鈴木恒晴,黒澤昌志,宮尾正信,佐道泰造
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform2012
- Author(s)
  Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao
- Organizer
  E-MRS 2012 Fall Meeting
- Place of Presentation
  Warsaw
- Data Source
  KAKENHI-PROJECT-24656209
[Presentation] AlC初期過程におけるSi <0.5>Ge <0.5>薄膜の微細構造解析2011
- Author(s)
  犬塚純平, 光原昌寿, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  2011年春季第58回応用物理学関係連合講演会,27p-BA-3
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 金属誘起反応を用いたSi <1-x>Ge x/絶縁膜(x : 0～1)の低温結晶成長2011
- Author(s)
  佐道泰造, 黒澤昌志, 川畑直之, 朴鍾, 都甲薫, 宮尾正信
- Organizer
  2011年春季第58回応用物理学関係連合講演会,24p-BK-10
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Advanced Hetero-epitaxial Growth based on SiGe for Multifunctional Devices2011
- Author(s)
  M. Miyao, T. Sadoh, and K. Hamaya
- Organizer
  15th International Conference on Thin Films 2011, ICTF-15, 11/8
- Place of Presentation
  Kyoto
- Invited
- Data Source
  KAKENHI-PROJECT-23360138
[Presentation] Low-temperature(~ 250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics2011
- Author(s)
  J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, T. Sadoh
- Organizer
  AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
- Place of Presentation
  Daejeon, Korea
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] 次世代フレキシブルデバイスの為の多結晶Si <1-x>Ge x(x=0-1)/絶縁膜の極低温層交換成長(～250^0C):朴鍾2011
- Author(s)
  黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造
- Organizer
  2011年春季第58回応用物理学関係連合講演会,24a-P2-8
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Au-catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator2011
- Author(s)
  J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Organizer
  219th ECS Meeting, The Electrochemical Society, Montreal
- Place of Presentation
  Canada
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] 次世代フレキシブルデバイスの為の多結晶Si1-xGex(x=0-1)/絶縁膜の極低温層交換成長(~ 250oC)2011
- Author(s)
  朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  川工科大学
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] エキシマレーザアニールによるSiN誘起ローカル歪みの増強2011
- Author(s)
  佐道泰造, 黒澤昌志, 部家彰, 松尾直人, 宮尾正信
- Organizer
  2011年春季第58回応用物理学関係連合講演会,25a-P3-22
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] "Lateral-liquid phase epitaxy of(101) Ge-on-insulator from Si template by metal-induced crystallization2011
- Author(s)
  M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao
- Organizer
  219th ECS Meeting, The Electrochemical Society, Montreal
- Place of Presentation
  Canada
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Low Temperature(~ 250oC) Layer Exchange Crystallization of Si1-xGex(x=1-0) on Insulator for Advanced Flexible Devices2011
- Author(s)
  Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] フレキシブルデバイス実現に向けたSi及びGe結晶/絶縁膜の極低温成長(~ 250oC)2011
- Author(s)
  佐道泰造,黒澤昌志,川畑直之,朴鍾.,都甲薫,宮尾正信
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] "Single-crystalline(110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds2011
- Author(s)
  M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh and M. Miyao
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Low-Temperature Formation of(111) Si1-xGex(0<x<1) on Insulator by Al-Induced Crystallization2011
- Author(s)
  M. Kurosawa, T. Sadoh, and M. Miyao
- Organizer
  AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
- Place of Presentation
  Daejeon, Korea
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template2010
- Author(s)
  M.Kurosawa, N.Kawabata, K.Toko, T.Sadoh, M.Miyao
- Organizer
  5th International WorkShop on New Group IV Semiconductor Nanoelectronics,29-30
- Place of Presentation
  Sendai, Japan (Jan.)
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム:2010
- Author(s)
  川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  電子情報通信学会研究会SDM2010
- Place of Presentation
  沖縄
- Year and Date
  2010-04-23
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 絶縁膜上におけるSi単結晶粒の方位制御とSiGeシキシング誘起横方向Geエピタキシヤル成長2010
- Author(s)
  黒澤昌志, 川畑直之, 都甲薫, 佐道泰造, 宮尾正信
- Organizer
  第57回応用物理学関係連合講演会,18a-D-8
- Place of Presentation
  湘南
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Strained Single-Crystal GOI (Ge on Insulator) Arrays by Rapid-Melting Growth from Si (111) Micro-Seeds2010
- Author(s)
  T.Sakane, K.Toko, T.Tanaka, T.Sadoh, M.Miyao
- Organizer
  5th ISTDM2010, 8-2
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Al誘起層交換法によるSiGe 結晶の配向成長機構2010
- Author(s)
  川畑直之, 黒澤昌志, 朴鍾, 佐道泰造, 宮尾正信
- Organizer
  第71回応用物理学会学術講演会,15p-ZD-2
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] "Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique2010
- Author(s)
  J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Gold-Induced Crystallization of Si at Low-Temperature(. 250oC) for Flexible Electronics2010
- Author(s)
  J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
- Organizer
  Nanotech Malaysia 2010 : Conference on Enabling Science and Nanotechnology
- Place of Presentation
  Kuala Lumpur, Malaysia
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices2010
- Author(s)
  M. Miyao, T. Sadoh, and K. Hamaya
- Organizer
  ICSI7 2011
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22360127
[Presentation] SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator)2010
- Author(s)
  K. Toko, M. Kurosawa, T. Tanaka, T. Sadoh, M. Miyao
- Organizer
  5th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, JAPAN(招待講演)
- Data Source
  KAKENHI-PROJECT-19360011
[Presentation] インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成2010
- Author(s)
  坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
- Organizer
  電子情報通信学会研究会SDM2010
- Place of Presentation
  沖縄
- Year and Date
  2010-04-23
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Al誘起結晶化Si <0.5>Ge <0.5>薄膜の微細構造解析2010
- Author(s)
  犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第57回応用物理学関係連合講演会,18p-TM-4
- Place of Presentation
  湘南
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Al誘起層交換成長法により形成したSiGe/絶縁膜の配向性制御2010
- Author(s)
  川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第57回応用物理学関係連合講演会,18p-TN-12
- Place of Presentation
  湘南
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Au誘起層交換成長法による多結晶Si/絶縁膜の極低温形成(~ 250oC)2010
- Author(s)
  朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth2010
- Author(s)
  M.Kurosawa, N.Kawabata, K.Toko, T.Sadoh, M.Miyao
- Organizer
  5th ISTDM2010, 8-5
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization2010
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  ITC' 10 5A-3, 28-29
- Place of Presentation
  Himeji, Japan, (Jan.)
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Al誘起層交換法によるSiGe結晶の配向成長機構2010
- Author(s)
  川畑直之,黒澤昌志,朴鍾.,佐道泰造,宮尾正信
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21656005
[Presentation] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009
- Author(s)
  T. Sadoh, T. Tanaka, Y. Ohta, K. Toko, M. Miyao
- Organizer
  AWAD2009
- Place of Presentation
  Busan, Korea(招待講演)
- Data Source
  KAKENHI-PROJECT-19360011
[Presentation] UV照射アニールによるSiN誘起ローカル歪みの増強2009
- Author(s)
  田中貴規, 田中政典, 黒澤昌志, 佐道泰造, 宮尾正信, 山口真典, 鈴木信二, 北村徳秀
- Organizer
  第56回応用物理学関係連合講演会,30p-E-9
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Molecular Beam Epitaxial Growth of Ferromagnetic Heusler Alloys for Group-IV Semiconductor Spintronic Devices2009
- Author(s)
  M. Miyao, K. Hamaya, T. Sadoh, H. Itoh, Y. Maeda
- Organizer
  ICSI-6
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Orientation-Controlled poly-Si on glass by Al-induced layer exchange technique2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  MRS Fall Meeting, Q7-3
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] インプリント法による非晶質Siの方位制御結晶化とGeの歪ヘテロエピタキシャル成長2009
- Author(s)
  坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会, 1a-T-6
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  電子情報通信学会研究会, SDM-7
- Place of Presentation
  鳥栖
- Year and Date
  2009-04-24
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Improvement of Electrical Characteristics of Poly-Ge by Two-Step Solid-Phase Crystallization2009
- Author(s)
  T. Sadoh, I. Nakao, K. Toko, T. Noguchi, and M. Miyao
- Organizer
  ITC' 09, Palaiseau
- Place of Presentation
  Palaiseau, France
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Si/Ge多層構造のAl誘起層交換成長とSi-Geミキシング2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会,30a-TF-10
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] AIC法で作製したSi_<0.5>Ge_<0.5>薄膜の微細構造解析2009
- Author(s)
  犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会, 1a-T-5
- Place of Presentation
  第56回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Si/Ge多層構造のAl誘起層交換成長とSi-Geミキシング2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会, 30a-TF-10
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Al-Induced Low Temperature Crystallization of Si <1-x>Ge x (0<x<1) by Interfacial Al Oxide Layer Control2009
- Author(s)
  黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  ICSI-6, 657524
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 2段熱処理固相成長法による多結晶Geの高品質形成2009
- Author(s)
  佐道泰造, 中尾勇兼, 都甲薫, 野口隆
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] (招待講演)Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009
- Author(s)
  T.Sadoh, et al.
- Organizer
  AWAD2009
- Place of Presentation
  韓国・プサン
- Data Source
  KAKENHI-PROJECT-19360011
[Presentation] 金属触媒誘起横方向成長法による多結晶Geの極低温成長2009
- Author(s)
  佐道泰造, 萩原貴嗣, 黒澤昌志, 都甲薫, 権丈淳
- Organizer
  第56回応用物理学関係連合講演会,1a-T-3
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] インプリント法による非晶質Siの方位制御結晶化とGeの歪ヘテロエピタキシャル成長2009
- Author(s)
  坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会,1a-T-6
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Formation of Single Crystalline Ge on Insulator by Liquid-Phase Epitaxy from Ni-Imprint-Induced Si Seed2009
- Author(s)
  K. Toko, T. Sakane, T. Tanaka, T. Sadoh, and M. Miyao
- Organizer
  ITC' 09, Palaiseau
- Place of Presentation
  France
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] 金属触媒誘起横方向成長法による多結晶Geの極低温成長2009
- Author(s)
  佐道泰造, 萩原貴嗣, 黒澤昌志, 都甲薫, 権丈淳
- Organizer
  第56回応用物理学関係連合講演会, 1a-T-3
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] 界面酸化膜制御によるSi_<1-x>Ge_x(0≦x≦1)混晶のAl誘起層交換成長2009
- Author(s)
  黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会, 30a-TF-9
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  電子情報通信学会研究会,SDM-7
- Place of Presentation
  鳥栖
- Year and Date
  2009-04-24
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 界面酸化膜制御によるSi <1-x>Ge x(0≦x≦1)混晶のAl誘起層交換成長2009
- Author(s)
  黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会,30a-TF-9
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Orientation control of large grain poly-Si on glass by interfacial oxide layer controlled Al-induced crystallization2009
- Author(s)
  黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
- Organizer
  SSDM2009, H-8-4
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] AIC法で作製したSi <0.5>Ge <0.5>薄膜の微細構造解析2009
- Author(s)
  犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
- Organizer
  第56回応用物理学関係連合講演会,1a-T-5
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 強磁性ホイスラー合金の原子層制御エピタキシャル成長とSiGeスピントロニクス2008
- Author(s)
  宮尾正信, 浜屋宏平, 上田公二, 安藤裕一郎, 佐道泰造, 能崎幸雄, 松山公秀, 伊藤博介, 前田佳均
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] ナノインデント誘起固相成長法によるSGOIの方位制御2008
- Author(s)
  都甲薫, 萩原隆嗣, 佐道泰造
- Organizer
  第69回応用物理学会学術講演会, 2a-CH-8
- Place of Presentation
  愛知
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Effects of Si-Layer Thickness on Solid-Phase Crystalization of Stacked Ge/Si/SiO2 Structure2008
- Author(s)
  T. Sadoh, H. Ohta, M. Miyao
- Organizer
  AM-FPD 08, 3-2
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成 : 電界印加効果、触媒種効果2008
- Author(s)
  萩原貴嗣, 都甲薫, 佐道泰造
- Organizer
  電子情報通信学会研究会SDM, 12-21
- Place of Presentation
  沖縄
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for Group-IV- Semiconductor Spintronic Applications (invited)2008
- Author(s)
  M. Miyao, K. Hamaya, T. Sadoh, K. Ueda, Y. Ando, Y. Nozaki, K. Matsuyama, H. Itoh, and Y. Maeda
- Organizer
  IUMRS-ICA, ZI-4
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] 絶縁膜上における非晶質SiGeのインデント誘起固相成長2008
- Author(s)
  都甲薫, 佐道泰造, 宮尾正信
- Organizer
  電子材料研究会, EFM-08-29
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Low Temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film Transistor2008
- Author(s)
  T. Sadoh, K. Toko, T. Noguchi, and M. Miyao
- Organizer
  ITC '08, LTPS-P29
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Effects of Si-Layer Thickness on Solid-Phase Crystalization of Stacked Ge/Si/SiO 2 Structure2008
- Author(s)
  T.Sadoh, H.Ohta, M.Miyao
- Organizer
  AM-FPD 08, 3-2
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 絶縁膜上におけるSiGe成長とデバイス応用2008
- Author(s)
  佐道泰造, 都甲薫
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  東京
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008
- Author(s)
  T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M. Miyao
- Organizer
  ECS-PRiME 2008, E15-23-2396
- Place of Presentation
  Hawaii, U.S.A.
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Indentation-Induced Solid-Phase Crystallization of SiGe on Insulator2008
- Author(s)
  K.Toko, T.Sadoh, M.Miyao
- Organizer
  New Group IV Semiconductor Nanoelectronics, Z-07
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Ge Fraction Dependence of Al-Induced Crystallization of SiGe at Low-Temperature2008
- Author(s)
  M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
- Organizer
  ITC '08, LTPS-2-1
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Interfacial-Oxide Controlled Al-Induced Crystallization of Si_<1-x>Ge_x(x : 0-1)on Insulating Substrate2008
- Author(s)
  M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
- Organizer
  AM-FPD 08, P-16
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2008
- Author(s)
  K.Toko, T. Sadoh, and M. Miyao
- Organizer
  AM-FPD 08, P-15
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] ガラス基板上における非晶質Geの低温固相成長2008
- Author(s)
  佐道泰造, 都甲薫, 中尾勇兼, 野口隆, 宮尾正信
- Organizer
  第55回応用物理学関係連合講演会, 27a-G-3
- Place of Presentation
  千葉
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] SiGeのAl誘起層交換成長に与える界面酸化膜効果2008
- Author(s)
  黒澤昌志, 津村宜孝, 佐道泰造, 宮尾正信
- Organizer
  第55回応用物理学関係連合講演会, 27a-G-1
- Place of Presentation
  千葉
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Low-Temperature(111)-Oriented SiGe Growth on Insulating Substrate by Al-Induced Crystallization2008
- Author(s)
  T. Sadoh, Y. Tsumura, M. Kurosawa, and M. Miyao
- Organizer
  4th ISTDM 2008, S3-04
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Interfacial-Oxide Controlled Al-Induced Crystallization of Si <1-x>Ge x (x : 0-1) on Insulating Substrate2008
- Author(s)
  M.Kurosawa, Y.Tsumura, T.Sadoh, M.Miyao
- Organizer
  AM-FPD 08, P-16
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] Atomically Controlled Epitaxy of Ferromagnetic Silicide on SiGe for SiGe-Channel Schottky Source/Drain Spin Transistor2008
- Author(s)
  T. Sadoh, K. Ueda, Y. Ando, Y. Kishi, K. Hamaya, Y. Maeda, M. Miyao
- Organizer
  NSC-JST Nano Device Workshop, Sn. 2-1
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Electrical Properties of Poly-Ge on Glass Substrate Grown by Two-Step Solid-Phase Crystallization2008
- Author(s)
  K. Toko, I. Nakao, T. Sadoh, T. Noguchi, and M. Miyao
- Organizer
  4th ISTDM 2008, S2-04
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization:2008
- Author(s)
  K.Toko, T.Sadoh, M.Miyao
- Organizer
  AM-FPD 08, P-15
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20560011
[Presentation] 次世代TFTに向けたa-Ge/石英の低温固相成長2008
- Author(s)
  中尾勇兼, 都甲薫, 野口隆, 佐道泰造
- Organizer
  電子情報通信学会研究会 SDM, 12-18
- Place of Presentation
  沖縄
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Si/Ge多層構造に於けるAl誘起層交換成長とSi/Ge相互拡散2008
- Author(s)
  黒澤昌志, 津村宜孝, 佐道泰造, 宮尾正信
- Organizer
  第69回応用物理学会学術講演会, 2a-CH-10
- Place of Presentation
  愛知
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Materials Innovation for Advanced TFT : Why and How?2008
- Author(s)
  M. Miyao, T. Sadoh, Y. Maeda
- Organizer
  The 4th International Thin-Film Transistor Conference
- Place of Presentation
  Seoul, Korea(招待講演)
- Data Source
  KAKENHI-PROJECT-19360011
[Presentation] ナノインデント法で結晶化させたSi薄膜の微細構造評価2008
- Author(s)
  村田大輔, 板倉賢, 西田稔, 佐道泰造, 宮尾正信
- Organizer
  日本金属学会九州支部
- Place of Presentation
  福岡
- Year and Date
  2008-06-08
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Indentation-Induced Solid-Phase Crystallization of SiGe on Insulator2008
- Author(s)
  K. Toko, T. Sadoh, and M. Miyao
- Organizer
  New Group IV Semiconductor Nanoelectronics, Z-07
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for Group-IV-Semiconductor Spintronic Applications2008
- Author(s)
  M. Miyao, K. Hamaya, T. Sadoh, K. Ueda, Y. Ando, Y. Nozaki, K. Matsuyama, H. Itoh, Y. Maed
- Organizer
  IUMRS-ICA 2008
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain2007
- Author(s)
  T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao
- Organizer
  PRICM 6, 9-4-5
- Place of Presentation
  Jeju Island, Korea
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Atomically Controlled Hetero-Epitaxy of Fe3Si/SiGe for Spintronics Application (invited)2007
- Author(s)
  M. Miyao, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Andoh, and Y. Maeda
- Organizer
  ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures, S7-I27
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Recent Progress in Low-Temperature Epitaxy of Silicon Based Heterostructures for Novel Devices (invited)2007
- Author(s)
  M. Miyao, H. Kanno, K. Ueda and T. Sadoh
- Organizer
  2007 MRS Spring Meeting, F8-3
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Low-Temperature Fabrication of Advanced Thin-Film Transistor with Ge Channel and Schottky Source/Drain2007
- Author(s)
  T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao
- Organizer
  ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures, S6-O12
- Place of Presentation
  Marseille France
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Atomically Controlled Hetero-Epitaxy of Fe3Si/SiGe for Spintronics Application2007
- Author(s)
  M. Miyao, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Andoh, Y. Maeda
- Organizer
  ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille France
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Al誘起層交換成長法による多結晶SiGe薄膜の低温形成2007
- Author(s)
  津村宜孝, 権丈淳, 佐道泰造. 宮尾正信
- Organizer
  薄膜材料デバイス研究会第4回研究集会, IIa-2
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Catalytic Effect of Ni in Crystallization of Amorphous SiGe Films by Imprint Technique2007
- Author(s)
  K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
- Organizer
  AM-FPD 07 , 9-4
- Place of Presentation
  Awaji, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Recent Progress in Low-Temperature Epitaxy of Silicon Based Heterostructures for Novel Devices2007
- Author(s)
  M. Miyao, H. Kanno, K. Ueda, T. Sadoh
- Organizer
  2007 MRS Spring Meeting, F8-3
- Place of Presentation
  San Francisco, CA, USA
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator2007
- Author(s)
  T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao
- Organizer
  AM-FPD 07 , 9-5
- Place of Presentation
  Awaji, Japan
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] 絶縁膜上におけるSiGeのAl誘起層交換成長2007
- Author(s)
  津村宜孝, 中尾勇兼, 権丈淳, 佐道泰造, 宮尾正信
- Organizer
  第68回応用物理学会学術講演会6a-P10-28
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film2007
- Author(s)
  Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao
- Organizer
  212th ECS Meeting, 1294
- Place of Presentation
  Washington D.C. , U.S.A.
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] RBS study of epitaxial growth of ferromagnetic Fe3Si on Ge (invited)2007
- Author(s)
  Y. Ando, T. Jonishi, K. Narumi, K. Ueda, T. Sadoh, M. Miyao, and Y. Maeda
- Organizer
  European MRS 2007 Spring Meeting, B-13-1
- Place of Presentation
  Strasburg, France
- Data Source
  KAKENHI-PROJECT-18063018
[Presentation] Position Controlled Solid-Phase Crystallization of SiGe by Ni-Imprint Technique2007
- Author(s)
  T. Sadoh, K. Toko, H. Kanno, T. Asano, and M. Miyao
- Organizer
  ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures, 21P 1-29
- Place of Presentation
  Marseille France
- Data Source
  KAKENHI-PROJECT-19560316
[Presentation] Self-Organized Technologies of Group-IV Based Hetero-Semiconductors on Insulator for Multi-Functional Devices
- Author(s)
  M. Miyao, Jong-Hyeok Park, and T. Sadoh
- Organizer
  The International Conference on Thin Films
- Place of Presentation
  Croatia
- Year and Date
  2014-10-13 – 2014-10-16
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of Large Grain Ge single crystal on Insulating substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn)
- Author(s)
  R. Matsumura, Y. Kai, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  The Electrochemical Society, 225th ECS Meeting
- Place of Presentation
  Orland, USA
- Year and Date
  2014-05-11 – 2014-05-16
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Orientation-Controlled Large-Grain SiGe on Flexible Substrate by Nucleation-Controlled Gold-Induced Crystallization
- Author(s)
  Jong-Hyeok Park, M. Miyao, and T. Sadoh
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Low-Temperature Gold-Induced Crystallization of Orientation Controlled Sige on Plastic for Flexible Electronics
- Author(s)
  T. Sadoh and M. Miyao
- Organizer
  The International Conference on Thin Films
- Place of Presentation
  Croatia
- Year and Date
  2014-10-13 – 2014-10-16
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Self-Organized Crystallization of Group IV Mixed-Crystal Semiconductors on Insulating Substrate for Advanced Thin-Film-Transistors
- Author(s)
  R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  The Twenty-second Annual International Conference on Composites-Nano Engineering
- Place of Presentation
  Malta
- Year and Date
  2014-07-13 – 2014-07-19
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of Quasi-Single-Crystal Ge on Plastic by Nucleation-Controlled Au-Induced Layer-Exchange Growth for Flexible Electronics
- Author(s)
  Jong-Hyeok Park, M. Miyao, and T. Sadoh
- Organizer
  The 21th International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Kyoto
- Year and Date
  2014-07-02 – 2014-07-04
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator
- Author(s)
  T. Sadoh, Y. Kai, H. Chikita, R. Matsumura, and M. Miyao
- Organizer
  JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Invited
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of Large-Grain Ge-Based Group-IV Crystals on Insulator by Seedless Rapid-Melting Growth in Solid-Liquid-Coexisting Temperature Region
- Author(s)
  R. Matsumura, Y. Kai, H.Chikita, T. Sadoh, and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Formation of Large Grain Ge on Insulator Structure by Liquid-Solid Coexisting Annealing of a-GeSn
- Author(s)
  Y. Kai, R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  The IUMRS International Conference in Asia
- Place of Presentation
  Fukuoka
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Low-Temperature Formation of Atomically-Controlled GeSn Thin-Films on SiGe Virtua-Substrate by Liquid-Solid Coexisting Annealing
- Author(s)
  H. Chikita, R. Matsumura, T. Sadoh, and M. Miyao
- Organizer
  The Twenty-second Annual International Conference on Composites-Nano Engineering
- Place of Presentation
  Malta
- Year and Date
  2014-07-13 – 2014-07-19
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Ultralow-Temperature Catalyst-Induced-Crystallization of SiGe on Plastic for Flexible Electronics
- Author(s)
  T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Invited
- Data Source
  KAKENHI-PROJECT-26630133
[Presentation] Composite-Structures of Single-Crystalline Ge(SiSn) and Amorphous Insulator on Si Platform for Multi-Functional Transistors by Self-Organized Processing
- Author(s)
  M. Miyao, R. Matsumura, H. Chikita, and T. Sadoh
- Organizer
  The Twenty-second Annual International Conference on Composites-Nano Engineering
- Place of Presentation
  Malta
- Year and Date
  2014-07-13 – 2014-07-19
- Invited
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Self-organized-seeding process for melt-back lateral-growth of group-IV mixed-crystal on insulator
- Author(s)
  R. Matsumura, H. Chikita, T. Sadoh, and M. Miyao
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Sn-enhanced low-temperature crystallization of a-GeSn/c-Si Stacked Structure for high-quality SiGe on Si platform
- Author(s)
  H. Chikita, R. Matsumura, Y. Kinoshita, A. Ooato, T. Sadoh, and M. Miyao
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-25289089
[Presentation] Melting-Sn Induced Seeding-Processing for Low-Temperature Lateral-Crystallization of a-GeSn on Insulating Substrate
- Author(s)
  H. Chikita, R. Matsumura, Y. Kai, T. Sadoh,and M. Miyao
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25289089

1. MIYAO Masanobu (60315132)

# of Collaborated Projects: 12 results

# of Collaborated Products: 171 results
2. ATSUSHI Kenjo (20037899)

# of Collaborated Projects: 10 results

# of Collaborated Products: 8 results
3. HAMAYA Kohei (90401281)

# of Collaborated Projects: 2 results

# of Collaborated Products: 15 results
4. 鶴島稔夫 (10236953)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. ASANO Tanemasa (50126306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
6. 黒木幸令 (40234596)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 日高昌則 (50037298)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 柿本浩一 (90291509)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 仲村龍介 (70396513)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. 石丸学 (00264086)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 生駒嘉史 (90315119)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 河野正道 (50311634)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Taizoh SADOH 佐道 泰造

SADOH Taizoh 佐道 泰造

Research Projects

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Co-Researchers

絶縁膜上における極薄半導体膜の固相成長の探求と次世代トランジスタへの展開Principal Investigator

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Formation of high-quality semiconductor thin films on insulator for transistor applicationPrincipal Investigator

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Development of Non-Equilibrium Processing of High Carrier Mobility Semiconductors on Insulator for High Speed Large Scale Integrated CircuitsPrincipal Investigator

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Development for High-Performance Tunnel Transistors with Direct-Transition-Type GeSnPrincipal Investigator

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Low temperature growth of GeSn crystals on insulator and application to high-speed transistors for three dimensional LSIPrincipal Investigator

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Development for High-Performance Tunnel Transistors with Direct-Transition Band Structure of GePrincipal Investigator

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High-Quality Formation of Strained-Ge-on-Insulator for Ultrahigh-Speed Transistor ApplicationPrincipal Investigator

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Formation of strained quasi-single crystal SiGe on glass for transistor applicationPrincipal Investigator

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Taizoh SADOH 佐道泰造

SADOH Taizoh 佐道泰造