OE Kunishige 尾江邦重

Researcher Number	20303927
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2014: 京都工芸繊維大学, 名誉教授 2006 – 2011: 京都工芸繊維大学, 工芸科学研究科, 教授 2005: 京都工芸繊維大学, 工芸学部, 教授 1999 – 2001: 京都工芸繊維大学, 工芸学部, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子デバイス・機器工学 / Electronic materials/Electric materials / Electron device/Electronic equipment Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator 半導体レーザ / semiconductor laser / Waveleneth Division Multinlexing / Molecular Beam Enitaxy / GaNAsBi Alloy / Temnerature-insensitive / Semiconductor Laser / GaNABi結晶 / 波長多重通信 / 波長多重光通信 … More / 分子線エピタキシャル法 / GaNAsBi混晶 / 温度無依存波長 / GalnAsP / dry etching / (110) face / optical communication / quantum well / GaInAs / Ga In As / GaInAsP / ドライエッチ / (110)面 / 光通信 / 量子井戸 / MOVPE growth / metastable / Bi-containing semiconductor / GaAsBi alloy / temperature-insensitive / MOVPE成長 / 熱準安定 / Bi系半導体 / 発振波長 / 温度無依存 / DFB共振器 / 多色レーザ / 有機レーザ / 有機色素 / ナノインプリント / 有機発光材料 / 量子エレクトロニクス / 先端機能デバイス / 高性能レーザ … More Except Principal Investigator 結晶成長 / レーザダイオード / III-V族半導体 / ビスマス / 分子線エピタキシー / 電子・電気材料 / 超格子 / 光物性 / 半導体物性 / 半金属半導体合金 / 局在準位 / レーザ / 半金属 / インジウムリン / ホトルミネセンス / 多重量子井戸 / 発光波長温度無依存 / 半導体半金属混晶 Less

GaAsBi laser diodes with low temperature dependence of lasing wavelength
- Principal Investigator
  
  MASAHIRO Yoshimoto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength
- Principal Investigator
  
  YOSHIMOTO Masahiro
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical properties
- Principal Investigator
  
  YOSHIMOTO Masahiro
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto Institute of Technology
インプリント技術による有機発光材料白色レーザ発振の実現Principal Investigator
- Principal Investigator
  
  尾江邦重
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyoto Institute of Technology
Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasersPrincipal Investigator
- Principal Investigator
  
  OE Kunishige
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto Institute of Technology
Study on New Semiconductors for Temperature-insensitive Wavelength Semiconductor LasersPrincipal Investigator
- Principal Investigator
  
  OE Kunishige
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto Institute of Technology
Study on (110)-QW Lasers with Low Threshold Current DensityPrincipal Investigator
- Principal Investigator
  
  OE Kunishige
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kyoto Institute of Technology

All 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book

[Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production"2012
- Author(s)
  Masahiro Yoshimoto, Kunishige Oe
- Total Pages
  12
- Publisher
  Elsevier Inc.
- Data Source
  KAKENHI-PROJECT-24246008
[Book] 現代工学入門半導体材料とデバイス2005
- Author(s)
  松波弘之, 尾江邦重
- Total Pages
  186
- Publisher
  岩波書店
- Data Source
  KAKENHI-PROJECT-17360140
[Book] Molecular beam epitaxy of GaAs and related quaternary alloys Molecular Beam Epitaxy : From Quantum Wells to Quantum Dots ; From Research to Mass Production
- Author(s)
  M. Yoshimoto and K. Oe
- Publisher
  Elsevier(印刷中)
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2013
- Author(s)
  Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe
- Journal Title
  
  J. Cryst. Growth
  
  Volume: available online Pages: 73-76
- DOI
  10.1016/j.jcrysgro.2012.12.157
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246008
[Journal Article] Study of the Deep Levels of a GaAs/p-GaAs_1-xBixHeterostructure Grown by Molecular Beam Epitaxy2012
- Author(s)
  T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: 1432 Pages: 27-32
- DOI
  10.1557/opl.2012.904
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
[Journal Article] High hole mobility in GaAs_<1-x> Bi_x alloys2012
- Author(s)
  K. Kado, T. Fuyuki, K. Yamada, K. Oe, and M. Yoshimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.51 Issue: 4R Pages: 040204-040204
- DOI
  10.1143/jjap.51.040204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Interface States in p-Type GaAs/GaAs_1-xBix Heterostructure2012
- Author(s)
  T. Fuyuki. S. Kashiyama, K. Oe, M. Yoshimoto
- Journal Title
  
  The Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 11S Pages: 11PC02-11PC02
- DOI
  10.1143/jjap.51.11pc02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
[Journal Article] Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012
- Author(s)
  Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
- Journal Title
  
  Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XI
  
  Volume: 8277 Pages: 827702-827702
- DOI
  10.1117/12.907098
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
[Journal Article] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012
- Author(s)
  T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
- Journal Title
  
  Materials Research Society Proceedings, Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
  
  Volume: (印刷中)
- URL
  http://www.mrs.org/
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Structural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2012
- Author(s)
  O.Ueda, Y.Tominaga, N.Ikenaga, M.Yoshimoto, K.Oe
- Journal Title
  
  Proceedings of Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  
  Pages: 1-4
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Structural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM, Proceedings of Compound Semiconductor Week(CSW/IPRM)2012
- Author(s)
  O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
- Journal Title
  
  2011 and 23rd International Conference on Indium Phosphide and Related Materials
  
  Pages: 1-4
- URL
  http://www.ieee.org/INSPECAccessionNumber:12172587
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Deep-Hole traps in p-Type GaAs_<1-x>Bi_x Grown by Molecular Beam Epitaxy2011
- Author(s)
  Takuma Fuyuki, Shota Kashiyama, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8R Pages: 080203-080203
- DOI
  10.1143/jjap.50.080203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
[Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x>Bi_x/GaAs multiquantum wells2011
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Journal Title
  
  physica status solidi (c)
  
  Volume: 8 Pages: 260-262
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum wells2011
- Author(s)
  Y. Tominaga, K. Oe and M. Yoshimoto
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.8 Issue: 2 Pages: 260-262
- DOI
  10.1002/pssc.201000520
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs_<1-x>Bi_x Laser by Photo-Pumping2010
- Author(s)
  T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 2
- NAID
  10027015196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs_<1-x> Bi_x Laser by Photo-Pumping2010
- Author(s)
  Y. Tominaga, K. Oe and M. Yoshimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3 Issue: 6 Pages: 062201-062201
- DOI
  10.1143/apex.3.062201
- NAID
  10027015196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Growth of GaAs_<1-x> Bi_x/Al_yGa_<1-y> As multi-quantum-well structures2010
- Author(s)
  T. Fuyuki, Y. Tominaga, K. Oe and M. Yoshimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.49 Issue: 7R Pages: 070211-070211
- DOI
  10.1143/jjap.49.070211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Growth of GaAs_<1-x>Bi_x/AlyGa_<1-y>As Multi-Quantum-Well structures2010
- Author(s)
  T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360008
[Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantumwells by molecular beam epitaxy, phys2008
- Author(s)
  Yoriko Tominaga, Yusuke Kinoshita,Gan Feng, Kunishige Oe, Masahiro Yoshimoto
- Journal Title
  
  stat.sol.(c) 5
  
  Pages: 2719-2721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Structural investigation of GaAs_<1-x>Bi_x/GaAsmultiquantum wells, App12008
- Author(s)
  Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
- Journal Title
  
  Phys. Lett 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Structural investigation of GaAs1-xBix/GaAs multiquantum wells2008
- Author(s)
  Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
- Journal Title
  
  Appl. Phys. Lett. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells by molecular beam epitaxy2008
- Author(s)
  Y. Tominaga, Y. Kinoshita, G. Fene. K. Oe, M. Yoshimoto
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 2719-2721
- NAID
  10025650132
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Annealing effects of diluted GaAs nitrideand bismide on photoluminescence2007
- Author(s)
  Masahiro Yoshimoto, Gan Feng, Kunishige Oe
- Journal Title
  
  ECS Transaction 6
  
  Pages: 45-51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2007
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
- Journal Title
  
  Journal of Crystal Growth(SPEC. ISS.) 301-302
  
  Pages: 975-978
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-bismide alloy2007
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Journal Title
  
  Jpn. Appl. Phys., Part 2 46(29-32)
- NAID
  40015553279
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature dependence of Bi behavior in MBE growth of InGaAs/InP2007
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Journal Title
  
  Journal of Crystal Growth(SPEC. ISS.) 301-302
  
  Pages: 121-124
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007
- Author(s)
  M., Yoshimoto, G., Feng, K., Oe
- Journal Title
  
  ECS Transaction 6
  
  Pages: 45-51
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007
- Author(s)
  Masahiro Yoshimoto, Gan Feng, Kunishige Oe
- Journal Title
  
  ECS Transaction 6
  
  Pages: 45-51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360008
[Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006
- Author(s)
  Y., Takehara, M., Yoshimoto, W., Huang, J., Saraie, K., Oe, A., Chayahara, Y., Horino
- Journal Title
  
  Jpn. J. Appl. Phys., Part 1 Vol.45
  
  Pages: 67-69
- NAID
  40007102777
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006
- Author(s)
  Y.Takehara, M.Yoshimoto, W.Huang, J.Saraie, K.Oe, et al.
- Journal Title
  
  Jpn J.Appl.Phys Part 1, Vol.45
  
  Pages: 67-69
- NAID
  40007102777
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006
- Author(s)
  K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
- Journal Title
  
  Proc. 32nd European Conference on Optical Communication, Sep. 2006, Cannes, France We3
  
  Pages: 39-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006
- Author(s)
  K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo, S.Tsuji
- Journal Title
  
  32nd European Conference on Optical Communication Cannes, France
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006
- Author(s)
  K.Yamashita, M.Yoshimoto, K, Oe
- Journal Title
  
  phys. stat. solidi (c)3
  
  Pages: 693-696
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006
- Author(s)
  M.Yoshimoto, W.Huang, G.Feng, Y.Tanaka, K.Oe
- Journal Title
  
  14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] New semiconductor alloy GaNAsBi with temperature-insensitive bandgap2006
- Author(s)
  M.Yoshimoto, W.Huang, G.Feng, K.Oe
- Journal Title
  
  phys. stat. solidi (b)243
  
  Pages: 1421-1425
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006
- Author(s)
  K.Yamashita, M.Yoshimoto, K.Oe
- Journal Title
  
  phys.stat.sol. (c)3
  
  Pages: 693-696
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006
- Author(s)
  G.Feng, K.Oe, M.Yoshimoto
- Journal Title
  
  14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006
- Author(s)
  K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo
- Journal Title
  
  Northern Optics 2006 Bergen, Norway
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006
- Author(s)
  K., Yamashita, M., Yoshimoto, K., Oe
- Journal Title
  
  phys. stat. sol (c)3
  
  Pages: 693-696
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Bi containing III-V quatemary alloy InGaAsBi grown by MBE2006
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Journal Title
  
  phys. stat. sol (a)203 No.11
  
  Pages: 2670-2673
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] New semiconductor alloy GaNAsBi with temperature- insensitive bandgap2006
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, K., Oe
- Journal Title
  
  Physica Status Solidi (b)243(7)
  
  Pages: 1421-1425
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005
- Author(s)
  K.Oe, W.Huang, G.Feng, M.Yoshimoto.
- Journal Title
  
  18th Annual Meeting IEEE Lasers & Electro-Optics Society (LEOS'05), Sydney, Australia 23-27 October
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005
- Author(s)
  G.Feng, M.Yoshimoto, K.Oe, A.Chayahara, Y.Horino
- Journal Title
  
  Jpn J.Appl.Phys Vol.44
- NAID
  130004533539
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005
- Author(s)
  K.Yamashita, M.Yoshimoto, K.Oe
- Journal Title
  
  32nd International Symposium on Compound Semiconductors (ISCS-2005)、 Rust, Germany September 18-22
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005
- Author(s)
  W.Huang, K.Oe, G.Feng, M.Yoshimoto
- Journal Title
  
  J.Appl.Phys. Vol.98
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap (INVITED TALK)2005
- Author(s)
  M.Yoshimoto, W.Huang, G.Feng, K.Oe;
- Journal Title
  
  Materials Research Society 2005 Fall Meeting, Boston, USA, Nov.28 Dec.1
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] MBE-grown GaNAsBi- matched to GaAs with 1.3-um emission wavelength2005
- Author(s)
  M., Yoshimoto, W., Huang, J., Saraie, K., Oe
- Journal Title
  
  Mat. Res. Soc. Symp. Proc Proc.829
  
  Pages: 523-528
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005
- Author(s)
  G., Feng, M., Yoshimoto, K., Oe, A., Chayahara, Y., Horino
- Journal Title
  
  Jpn J. Appl. Phys Vol.44
- NAID
  130004533539
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005
- Author(s)
  M.Yoshimoto, W.Huang, G.Feng, K.Oe
- Journal Title
  
  International Conference on Nitride Semiconductors, Bremen, Germany August28-September 2
- Data Source
  KAKENHI-PROJECT-17360140
[Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005
- Author(s)
  W., Huang, K., Oe, G., Feng, M., Yoshimoto
- Journal Title
  
  J. Appl. Phys Vol.98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] アドミタンス法によるGaAs/pGaAsBiヘテロ界面評価2012
- Author(s)
  冬木琢真、柏山祥太, 尾江邦重, 吉本昌広
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  守山市
- Data Source
  KAKENHI-PROJECT-24246008
[Presentation] アドミタンス法によるGaAs/pGaAs_<1-x>Bi_x界面評価2012
- Author(s)
  冬木琢真, 柏山祥太, 尾江邦重, 吉本昌広
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] High Hole Mobility in GaAs1-xBix Alloys2012
- Author(s)
  Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
- Place of Presentation
  Victoria, Canada
- Data Source
  KAKENHI-PROJECT-24246008
[Presentation] Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  SPIE 2012 Photonic West
- Place of Presentation
  Moscone Center (San Francisco, USA)(招待講演)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Photo-pumped GaAs_<1-x> Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012
- Author(s)
  Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  SPIE 2012 Photonic West
- Place of Presentation
  Moscone Center(San Francisco, USA)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy2012
- Author(s)
  Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
- Place of Presentation
  Victoria, Canada
- Data Source
  KAKENHI-PROJECT-24246008
[Presentation] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012
- Author(s)
  T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
- Organizer
  Materials Research Society 2012 Spring meeting, Symposium G
- Place of Presentation
  Moscone Center(San Francisco, USA)
- Year and Date
  2012-04-10
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy2012
- Author(s)
  Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  2012 Materials Reserch Society (MRS) Spring Meeting
- Place of Presentation
  San Francisco
- Data Source
  KAKENHI-PROJECT-24246008
[Presentation] Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2012
- Author(s)
  Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-24246008
[Presentation] DLTS法によるp型GaAsBi結晶中の点欠陥評価2011
- Author(s)
  冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第30回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bix/GaAsヘテロ接合界面の急峻性の熱処理による変化2011
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第30回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bi_xのp形ドーピング特性2011
- Author(s)
  角浩輔, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bi_x/GaAsヘテロ接合界面の急峻性の熱処理による変化2011
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第58回応用物理学関係連合大会
- Place of Presentation
  東海大学(厚木市)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Variations in the abruptness at GaAs_<1-x>Bi_x/GaAs heterointerfaces caused by thermal annealing2011
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Maritim proArte Hotel (Berlin, Germany)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011
- Author(s)
  Masahiro Yoshimoto, Y.Tominaga, Kunishige Oe
- Organizer
  2nd International workshop on Bismuth-Containing Semiconductors : Theory, Simulation, and Experiment
- Place of Presentation
  Univ.of Surrey (Guildford, UK)
- Year and Date
  2011-07-19
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x> Bi_x mixed crystals2011
- Author(s)
  T. Fuyuki, S. Kashiyama, Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  38th International Symposium on Compound Semiconductors(ISCS2011)
- Place of Presentation
  Maritim proArte Hotel(Berlin, Germany)
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Stractural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2011
- Author(s)
  O.Ueda, Y.Tominaga, N.Ikenaga, Masahiro Yoshimoto, K.Oe
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Maritim proArte Hotel (Berlin, Germany)
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] p形GaAsBiの電気的特性2011
- Author(s)
  角浩輔, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  第30回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作(II)2011
- Author(s)
  富永依里子, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価(II)2011
- Author(s)
  冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振-その発振波長の低温度依存性-2011
- Author(s)
  富永依里子、尾江邦重, 吉本昌広
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  機械振興会館(東京)
- Year and Date
  2011-12-16
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] MBE成長GaAs_<1-x>Bi_x結晶のTEM評価2011
- Author(s)
  上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
- Organizer
  第30回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県守山市)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x>Bi_x mixed crystals2011
- Author(s)
  T.Fuyuki, S.Kashiyama, Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Maritim proArte Hotel (Berlin, Germany)
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価2011
- Author(s)
  冬木琢真, 柏山祥太, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  第58回応用物理学関係連合大会
- Place of Presentation
  東海大学(厚木市)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Stractural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM2011
- Author(s)
  O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials(IPRM2011)
- Place of Presentation
  Maritim proArte Hotel(Berlin, Germany)
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011
- Author(s)
  M. Yoshimoto, Y. Tominaga, K. Oe
- Organizer
  2nd International workshop on Bismuth-Containing Semiconductors
- Place of Presentation
  Univ. of Surrey(Guildford, UK)
- Year and Date
  2011-07-19
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Variations in the abruptness at GaAs_<1-x> Bi_x/GaAs heterointerfaces caused by thermal annealing2011
- Author(s)
  Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  38th International Symposium on Compound Semiconductors(ISCS2011)
- Place of Presentation
  Maritim proArte Hotel(Berlin, Germany)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010
- Author(s)
  T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺(伊豆市)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Present status and future prospects of Bi-containing semiconductors2010
- Author(s)
  M. Yoshimoto, K. Oe
- Organizer
  1st International Workshop on Bismuth-Containing Semiconductors
- Place of Presentation
  ミシガン大学(米国)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Lasing in GaAs_<1-x> Bi_x/GaAs thin film cavity with low-temperature-dependent oscillation wavelength2010
- Author(s)
  Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  2010 IEEE International Semiconductor Laser Conference
- Place of Presentation
  全日空ホテル(京都市)
- Year and Date
  2010-09-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第57回応用物理学関係連合大会
- Place of Presentation
  東海大学 (平塚市)
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] TEMによるMBE成長GaAs_<1-x>Bi_x混晶の構造評価2010
- Author(s)
  上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
- Organizer
  第71回応用物理学会学術講会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Temperature insensitive Photoluminescence Emission Wavelength in GaAs_<1-x>Bi_x/GaAs Multiquantum Wells2010
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  37th International Symposium on Compound Semiconductors
- Place of Presentation
  高松シンボルタワー(高松市)
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Present status and future prospects of Bi-containing semiconductors2010
- Author(s)
  M.Yoshimoto, K.Oe
- Organizer
  1st International Workshop on Bismuth-Containing Semiconductors
- Place of Presentation
  ミシガン大学(米国)(招待講演)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] (100)GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010
- Author(s)
  冬木琢真, 富永依里子, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  第57回応用物理学関係連合大会
- Place of Presentation
  東海大学 (平塚市)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第71回応用物理学会学術講会
- Place of Presentation
  長崎大学(長崎市)(受賞記念講演)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振・その発振波長の低温度依存性2010
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  機械振興会館(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Lasing in GaAs_<1-x>Bi_x/GaAs Thin Film Cavity with Low-Temperature-Dependent Oscillation Wavelength2010
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  2010 IEEE International Semiconductor Laser Conference
- Place of Presentation
  全日空ホテル(京都市)
- Year and Date
  2010-09-30
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum Wells2010
- Author(s)
  Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  37th International Symposium on Compound Semiconductors
- Place of Presentation
  高松シンボルタワー(高松市)
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Growth of GaAs_<1-x> Bi_x/Al_yGa_<1-y> As multi-quantum well structures on GaAs2010
- Author(s)
  T. Fuyuki, Y. Tominaga, K. Yamada, K. Oe, M. Yoshimoto
- Organizer
  Electronic Materials Conference
- Place of Presentation
  ノートルダム大学(米国)
- Year and Date
  2010-06-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Growth of GaAs_<1-x>Bi_x/Al_yGa_<1-y>As Multi-Quantum Well Structures on GaAs2010
- Author(s)
  T.Fuyuki, Y Tominaga, K.Yamada, K.Oe, M.Yoshimoto
- Organizer
  Electronic Materials Conference 2010
- Place of Presentation
  ノートルダム大学(米国)
- Year and Date
  2010-06-24
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] GaAs_<1-x>Bi_xレーザの発振波長の低温度依存性2010
- Author(s)
  Y.Tominaga, K.Oe, M.Yoshimoto
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺(伊豆市)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Structural investigation of GaAs_<1-x>Bi_x/GaAs multiquantum well structures fabricated by molecular beam epitaxy2009
- Author(s)
  Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖 (守山市)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] 分子線エピタキシー法を用いて成長したGaAs_<1-x>Bi_xGaAs多重量子井戸の構造評価2009
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院 (東京)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] (100) GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009
- Author(s)
  山田和弥, 富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第56回応用物理関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs2009
- Author(s)
  K.Yamada, Y.Tominaga,, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  2009 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  関西大学 (吹田市)
- Year and Date
  2009-05-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Fabrication of Growth of GaAs_<1-x>Bi_x/GaAs multiquantum well structure without distinct segregation for application to laser diodes with the temperature-insensitive wavelength2009
- Author(s)
  Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  2nd HOPE meeting
- Place of Presentation
  箱根プリンスホテル (箱根町)
- Year and Date
  2009-09-28
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on (100)GaAs substrate2009
- Author(s)
  Kazuya Yamada, Yoriko Tominaga,Kunishige Oe, Masahiro Yoshimoto
- Organizer
  The 2009 InternationalMeeting for Future of Electron Devices, Kansai
- Place of Presentation
  吹田市
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] GaAs_<1-x>Bi_x/GaAs多重量子井戸の構造評価2009
- Author(s)
  富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第56回応用物理関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on(100) GaAs2009
- Author(s)
  K. Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  2009 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  関西大学(吹田市)
- Year and Date
  2009-05-14
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009
- Author(s)
  山田和弥, 富永依里子, 尾江邦重, 吉本昌広
- Organizer
  第56回応用物理関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] X線回折を用いたGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の評価2009
- Author(s)
  富永依里子, 山田和弥, 尾江邦重, 吉本昌広
- Organizer
  応用物理学会第70回学術講演会
- Place of Presentation
  富山大学 (富山市)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360008
[Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs Substrate2009
- Author(s)
  K, Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
- Organizer
  The 2009 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  吹田市
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Structures2008
- Author(s)
  Y., Kinoshita, Y., Tominaga, K., Oe, M., Yoshimoto
- Organizer
  TECHNICAL REPORT OF IEICE
- Place of Presentation
  LQE OSAKADENKITUSHIN U. NEYAGAWA-SHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Growth of GaAs_<1-x>Bi_xB/GaAs multi-quantum wells with 1.3 μm photoluminescence emission2008
- Author(s)
  Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  50th Electronic Materials Conference
- Place of Presentation
  Santa Barbara, CA, USA
- Year and Date
  2008-06-25
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells with 1.3μm photoluminescence emission2008
- Author(s)
  Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
- Organizer
  50th Electronic Materials Conference
- Place of Presentation
  Santa Barbara, CA, USA
- Year and Date
  2008-06-25
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_xB/GaAs多重量子井戸構造の製作2008
- Author(s)
  富永依里子, 木下雄介, 尾江邦重, 吉本昌広
- Organizer
  第33回結晶成長討論会
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Fabrication of GaAsBi/GaAs multi-Quantum well structures with 1.3μm2008
- Author(s)
  富永依里子, 木下雄介, 尾江邦重, 吉本昌広
- Organizer
  第27回電子材料シンポジウム
- Place of Presentation
  伊豆市
- Year and Date
  2008-07-11
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008
- Author(s)
  Y. Tominaga, Y. Kinoshita, K. Oe. M. Yoshimoto
- Organizer
  IEEE Nanotechnology Materials and Devices Conference 2008
- Place of Presentation
  京都市
- Year and Date
  2008-10-10
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Fabrication of GaAsBi/GaAs multi-quantum well structures with 1.3μm2008
- Author(s)
  富永依里子, 木下雄介, 尾江邦重, 吉本昌広
- Organizer
  第27回電子材料シンポジウム
- Place of Presentation
  伊豆市
- Year and Date
  2008-07-11
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2008
- Author(s)
  富永依里子, 木下雄介, 尾江邦重, 吉本昌広
- Organizer
  第33回結晶成長討論会
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008
- Author(s)
  Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
- Organizer
  IEEE Nanotechnology Materials and DevicesConference 2008
- Place of Presentation
  京都市
- Year and Date
  2008-10-10
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structure emitting 1.3 um wavelength2008
- Author(s)
  Y., Tominaga, K., Oe, M., Yoshimoto
- Organizer
  55th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-ZT-7)
- Place of Presentation
  NIHON U. HUNABASHISHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Stmctures2007
- Author(s)
  Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M., Yoshimoto
- Organizer
  54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-2)
- Place of Presentation
  AOYAMAGAKUIN U. SAGAMIHARASHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaN_yAs_<1-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007
- Author(s)
  K. Oe, et. al.
- Organizer
  European Materials Reserch Society Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2007-05-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007
- Author(s)
  Masahiro Yoshimoto, Gan Feng, Kunishige Oe
- Organizer
  211th Electrochemical Society Meeting
- Place of Presentation
  米国シカゴ
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007
- Author(s)
  M., Yoshimoto, G., Feng, K., Oe
- Organizer
  211th Electro Chemical Sosiety Meeting
- Place of Presentation
  Chicago, IL, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Fabrication of GaAsBi/GaAs multi-quantum-well structures and their thermal stability2007
- Author(s)
  Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
- Organizer
  26th Electronic Materials Sympo.(EMS-26), Shiga
- Place of Presentation
  A8
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structures(II)2007
- Author(s)
  Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
- Organizer
  68th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(7p-E-7)
- Place of Presentation
  HOKKAIDOKOGYOU U. SAPPOROSHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007
- Author(s)
  Masahiro Yoshimoto, Gan Feng, Kunishige Oe
- Organizer
  211th Electrochemical Society Meeting
- Place of Presentation
  Chicago, IL, USA
- Year and Date
  2007-05-07
- Data Source
  KAKENHI-PROJECT-19360008
[Presentation] Influence of thermal annealing treatment on 'the luminescence properties of dilute GaNAsBi alloy2007
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Organizer
  54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-3)
- Place of Presentation
  AOYAMAGAKUIN U. SAGAMIHARASHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaAsBi/GaAs Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy2007
- Author(s)
  Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M. Yoshimoto
- Organizer
  The 2007 Intemational Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaN_yAs_<1-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007
- Author(s)
  K. Oe,.,
- Organizer
  European Materials Reserch Society Spring Meting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2007-05-31
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaN_yAs_<i-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007
- Author(s)
  K., Oe, G., Feng, Y., Kinoshita, M., Yoshimoto
- Organizer
  European Materials Reserch Society Spring Meeting, 57
- Place of Presentation
  Strasbourg, France
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Growth of GaAsBi/GaAs Multi-Quantum-Wells by Molecular Beam Epitaxy2007
- Author(s)
  Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
- Organizer
  The 34 th International Symposium on Compound Semiconductors(ISCS)
- Place of Presentation
  Kyoto, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
- Organizer
  14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan, FrB3-4
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Organizer
  14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Tokyo, Japan, TuA2-2
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006
- Author(s)
  K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo
- Organizer
  Northern Optics 2006
- Place of Presentation
  Bergen, Norway, W39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Low temperature dependence of light emission and absorption of GaNAsBi/GaAs DH diodes2006
- Author(s)
  H., Kazama, Y., Tanaka, M., Yoshimoto, W., Huang, G., Feng, K., Yamashita, Y., Kondo, S., Tsuji, K., Oe
- Organizer
  67th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(29a-B-8)
- Place of Presentation
  RITSUMEIKAN U. KUSATSUSHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Molecular beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2006
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
- Organizer
  25th Electronic Materials Sympo. (EMS-25), Izu-no-kuni
- Place of Presentation
  I5
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006
- Author(s)
  K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
- Organizer
  32nd European Conference on Optical Communication
- Place of Presentation
  Cannes, France, We3.P.39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006
- Author(s)
  G., Feng, K., Oe, M., Yoshimoto
- Organizer
  53th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(25a-T-11)
- Place of Presentation
  MUSASHIKOUGYOU U. TOUKYOUTO
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap2005
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, K., Oe
- Organizer
  (INVITED) Materials Research Society 2005 Fall Meeting, Symposium EE
- Place of Presentation
  Boston, USA, EE 11.6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] MBE growth of quatemary InGaAsBi alloy", Jpn. J. Appl. Phys., Part I, Vol.45, pp.67-69, 20062005
- Author(s)
  G., Feng, M., Yoshimoto, K., Oe, A.m, Chayahara, Y.m, Horino
- Organizer
  66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-1)
- Place of Presentation
  TOKUSHIMA U. TOKUSHIMASHL
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005
- Author(s)
  K., Yamashita, M., Yoshimoto, K., Oe
- Organizer
  32nd International Symposium on Compound Semiconductors(ISCS-2005), WE P16, Rust, Germany
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, K., Oe
- Organizer
  International Conference on Nitride Semiconductors
- Place of Presentation
  Bremen, Germany, Tu-G2-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] Temperature-insensitive refractive index of GaAsBi alloy2005
- Author(s)
  K., Yamashita, M., Yoshimoto, K., Oe
- Organizer
  66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-2)
- Place of Presentation
  TOKUSHIMA U. TOKUSHIMASHI
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] New semiconductor alloy GaNAsBi wit] ; temperature-insensitive bandgap2005
- Author(s)
  M., Yoshimoto, W., Huang, G., Feng, K., Oe
- Organizer
  24th Electronic Materials Sympq.(EMS-24), Matsuyama
- Place of Presentation
  D1
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140
[Presentation] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005
- Author(s)
  K., Oe, W., Huang, G., Feng, M., Yoshimoto
- Organizer
  18th Annual Meeting IEEE Lasers & Electro-Optics Society(LEOS)
- Place of Presentation
  Sydney, ThP2
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360140

1. YOSHIMOTO Masahiro (20210776)

# of Collaborated Projects: 4 results

# of Collaborated Products: 132 results
2. YAMASHITA Kenichi (00346115)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
3. FUKUZAWA Masayuki (60293990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YAMADA Masayoshi (70029320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 柳久雄 (00220179)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. TOMINAGA Yoriko

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
7. YAMADA Kazuya

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
8. NAGNUMA Mitsuru

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OE Kunishige 尾江 邦重

Research Projects

Research Products

Co-Researchers

GaAsBi laser diodes with low temperature dependence of lasing wavelength

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Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength

Principal Investigator

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Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical properties

Principal Investigator

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インプリント技術による有機発光材料白色レーザ発振の実現Principal Investigator

Principal Investigator

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Research Institution

Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasersPrincipal Investigator

Principal Investigator

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Study on New Semiconductors for Temperature-insensitive Wavelength Semiconductor LasersPrincipal Investigator

Principal Investigator

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Study on (110)-QW Lasers with Low Threshold Current DensityPrincipal Investigator

Principal Investigator

Project Period (FY)

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[Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production"2012

Author(s)

Total Pages

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Data Source

[Book] 現代工学入門 半導体材料とデバイス2005

Author(s)

Total Pages

Publisher

Data Source

[Book] Molecular beam epitaxy of GaAs and related quaternary alloys Molecular Beam Epitaxy : From Quantum Wells to Quantum Dots ; From Research to Mass Production

Author(s)

Publisher

Data Source

[Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Study of the Deep Levels of a GaAs/p-GaAs_1-xBixHeterostructure Grown by Molecular Beam Epitaxy2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High hole mobility in GaAs_<1-x> Bi_x alloys2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Interface States in p-Type GaAs/GaAs_1-xBix Heterostructure2012

Author(s)

Journal Title

DOI

Data Source

OE Kunishige 尾江邦重

[Book] 現代工学入門半導体材料とデバイス2005