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OE Kunishige  尾江 邦重

ORCIDConnect your ORCID iD *help
Researcher Number 20303927
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2014: 京都工芸繊維大学, 名誉教授
2006 – 2011: 京都工芸繊維大学, 工芸科学研究科, 教授
2005: 京都工芸繊維大学, 工芸学部, 教授
1999 – 2001: 京都工芸繊維大学, 工芸学部, 教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子デバイス・機器工学 / Electronic materials/Electric materials / Electron device/Electronic equipment
Except Principal Investigator
Applied materials science/Crystal engineering
Keywords
Principal Investigator
半導体レーザ / semiconductor laser / Waveleneth Division Multinlexing / Molecular Beam Enitaxy / GaNAsBi Alloy / Temnerature-insensitive / Semiconductor Laser / GaNABi結晶 / 波長多重通信 / 波長多重光通信 … More / 分子線エピタキシャル法 / GaNAsBi混晶 / 温度無依存波長 / GalnAsP / dry etching / (110) face / optical communication / quantum well / GaInAs / Ga In As / GaInAsP / ドライエッチ / (110)面 / 光通信 / 量子井戸 / MOVPE growth / metastable / Bi-containing semiconductor / GaAsBi alloy / temperature-insensitive / MOVPE成長 / 熱準安定 / Bi系半導体 / 発振波長 / 温度無依存 / DFB共振器 / 多色レーザ / 有機レーザ / 有機色素 / ナノインプリント / 有機発光材料 / 量子エレクトロニクス / 先端機能デバイス / 高性能レーザ … More
Except Principal Investigator
結晶成長 / レーザダイオード / III-V族半導体 / ビスマス / 分子線エピタキシー / 電子・電気材料 / 超格子 / 光物性 / 半導体物性 / 半金属半導体合金 / 局在準位 / レーザ / 半金属 / インジウムリン / ホトルミネセンス / 多重量子井戸 / 発光波長温度無依存 / 半導体半金属混晶 Less
  • Research Projects

    (7 results)
  • Research Products

    (139 results)
  • Co-Researchers

    (8 People)
  •  GaAsBi laser diodes with low temperature dependence of lasing wavelength

    • Principal Investigator
      MASAHIRO Yoshimoto
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical properties

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  インプリント技術による有機発光材料白色レーザ発振の実現Principal Investigator

    • Principal Investigator
      尾江 邦重
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kyoto Institute of Technology
  •  Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasersPrincipal Investigator

    • Principal Investigator
      OE Kunishige
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto Institute of Technology
  •  Study on New Semiconductors for Temperature-insensitive Wavelength Semiconductor LasersPrincipal Investigator

    • Principal Investigator
      OE Kunishige
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto Institute of Technology
  •  Study on (110)-QW Lasers with Low Threshold Current DensityPrincipal Investigator

    • Principal Investigator
      OE Kunishige
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Kyoto Institute of Technology

All 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book

  • [Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production"2012

    • Author(s)
      Masahiro Yoshimoto, Kunishige Oe
    • Total Pages
      12
    • Publisher
      Elsevier Inc.
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Book] 現代工学入門 半導体材料とデバイス2005

    • Author(s)
      松波弘之, 尾江邦重
    • Total Pages
      186
    • Publisher
      岩波書店
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Book] Molecular beam epitaxy of GaAs and related quaternary alloys Molecular Beam Epitaxy : From Quantum Wells to Quantum Dots ; From Research to Mass Production

    • Author(s)
      M. Yoshimoto and K. Oe
    • Publisher
      Elsevier(印刷中)
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2013

    • Author(s)
      Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe
    • Journal Title

      J. Cryst. Growth

      Volume: available online Pages: 73-76

    • DOI

      10.1016/j.jcrysgro.2012.12.157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Journal Article] Study of the Deep Levels of a GaAs/p-GaAs_1-xBixHeterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: 1432 Pages: 27-32

    • DOI

      10.1557/opl.2012.904

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
  • [Journal Article] High hole mobility in GaAs_<1-x> Bi_x alloys2012

    • Author(s)
      K. Kado, T. Fuyuki, K. Yamada, K. Oe, and M. Yoshimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51 Issue: 4R Pages: 040204-040204

    • DOI

      10.1143/jjap.51.040204

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Interface States in p-Type GaAs/GaAs_1-xBix Heterostructure2012

    • Author(s)
      T. Fuyuki. S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      The Japanese Journal of Applied Physics

      Volume: 51 Issue: 11S Pages: 11PC02-11PC02

    • DOI

      10.1143/jjap.51.11pc02

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
  • [Journal Article] Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XI

      Volume: 8277 Pages: 827702-827702

    • DOI

      10.1117/12.907098

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
  • [Journal Article] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      Materials Research Society Proceedings, Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

      Volume: (印刷中)

    • URL

      http://www.mrs.org/

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2012

    • Author(s)
      O.Ueda, Y.Tominaga, N.Ikenaga, M.Yoshimoto, K.Oe
    • Journal Title

      Proceedings of Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

      Pages: 1-4

    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM, Proceedings of Compound Semiconductor Week(CSW/IPRM)2012

    • Author(s)
      O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
    • Journal Title

      2011 and 23rd International Conference on Indium Phosphide and Related Materials

      Pages: 1-4

    • URL

      http://www.ieee.org/INSPECAccessionNumber:12172587

    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Deep-Hole traps in p-Type GaAs_<1-x>Bi_x Grown by Molecular Beam Epitaxy2011

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 50 Issue: 8R Pages: 080203-080203

    • DOI

      10.1143/jjap.50.080203

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
  • [Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x>Bi_x/GaAs multiquantum wells2011

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      physica status solidi (c)

      Volume: 8 Pages: 260-262

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum wells2011

    • Author(s)
      Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      physica status solidi(c)

      Volume: Vol.8 Issue: 2 Pages: 260-262

    • DOI

      10.1002/pssc.201000520

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs_<1-x>Bi_x Laser by Photo-Pumping2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027015196

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs_<1-x> Bi_x Laser by Photo-Pumping2010

    • Author(s)
      Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      Applied Physics Express

      Volume: Vol.3 Issue: 6 Pages: 062201-062201

    • DOI

      10.1143/apex.3.062201

    • NAID

      10027015196

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs_<1-x> Bi_x/Al_yGa_<1-y> As multi-quantum-well structures2010

    • Author(s)
      T. Fuyuki, Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.49 Issue: 7R Pages: 070211-070211

    • DOI

      10.1143/jjap.49.070211

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/AlyGa_<1-y>As Multi-Quantum-Well structures2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantumwells by molecular beam epitaxy, phys2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita,Gan Feng, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      stat.sol.(c) 5

      Pages: 2719-2721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Structural investigation of GaAs_<1-x>Bi_x/GaAsmultiquantum wells, App12008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Phys. Lett 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Structural investigation of GaAs1-xBix/GaAs multiquantum wells2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
    • Journal Title

      Appl. Phys. Lett. 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells by molecular beam epitaxy2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, G. Fene. K. Oe, M. Yoshimoto
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2719-2721

    • NAID

      10025650132

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Annealing effects of diluted GaAs nitrideand bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2007

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Journal Title

      Journal of Crystal Growth(SPEC. ISS.) 301-302

      Pages: 975-978

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-bismide alloy2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      Jpn. Appl. Phys., Part 2 46(29-32)

    • NAID

      40015553279

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature dependence of Bi behavior in MBE growth of InGaAs/InP2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      Journal of Crystal Growth(SPEC. ISS.) 301-302

      Pages: 121-124

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      M., Yoshimoto, G., Feng, K., Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006

    • Author(s)
      Y., Takehara, M., Yoshimoto, W., Huang, J., Saraie, K., Oe, A., Chayahara, Y., Horino
    • Journal Title

      Jpn. J. Appl. Phys., Part 1 Vol.45

      Pages: 67-69

    • NAID

      40007102777

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006

    • Author(s)
      Y.Takehara, M.Yoshimoto, W.Huang, J.Saraie, K.Oe, et al.
    • Journal Title

      Jpn J.Appl.Phys Part 1, Vol.45

      Pages: 67-69

    • NAID

      40007102777

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
    • Journal Title

      Proc. 32nd European Conference on Optical Communication, Sep. 2006, Cannes, France We3

      Pages: 39-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo, S.Tsuji
    • Journal Title

      32nd European Conference on Optical Communication Cannes, France

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K.Yamashita, M.Yoshimoto, K, Oe
    • Journal Title

      phys. stat. solidi (c)3

      Pages: 693-696

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, Y.Tanaka, K.Oe
    • Journal Title

      14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature-insensitive bandgap2006

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe
    • Journal Title

      phys. stat. solidi (b)243

      Pages: 1421-1425

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K.Yamashita, M.Yoshimoto, K.Oe
    • Journal Title

      phys.stat.sol. (c)3

      Pages: 693-696

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G.Feng, K.Oe, M.Yoshimoto
    • Journal Title

      14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo
    • Journal Title

      Northern Optics 2006 Bergen, Norway

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Journal Title

      phys. stat. sol (c)3

      Pages: 693-696

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Bi containing III-V quatemary alloy InGaAsBi grown by MBE2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      phys. stat. sol (a)203 No.11

      Pages: 2670-2673

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature- insensitive bandgap2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Journal Title

      Physica Status Solidi (b)243(7)

      Pages: 1421-1425

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005

    • Author(s)
      K.Oe, W.Huang, G.Feng, M.Yoshimoto.
    • Journal Title

      18th Annual Meeting IEEE Lasers & Electro-Optics Society (LEOS'05), Sydney, Australia 23-27 October

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005

    • Author(s)
      G.Feng, M.Yoshimoto, K.Oe, A.Chayahara, Y.Horino
    • Journal Title

      Jpn J.Appl.Phys Vol.44

    • NAID

      130004533539

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005

    • Author(s)
      K.Yamashita, M.Yoshimoto, K.Oe
    • Journal Title

      32nd International Symposium on Compound Semiconductors (ISCS-2005)、 Rust, Germany September 18-22

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005

    • Author(s)
      W.Huang, K.Oe, G.Feng, M.Yoshimoto
    • Journal Title

      J.Appl.Phys. Vol.98

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap (INVITED TALK)2005

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe;
    • Journal Title

      Materials Research Society 2005 Fall Meeting, Boston, USA, Nov.28 Dec.1

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] MBE-grown GaNAsBi- matched to GaAs with 1.3-um emission wavelength2005

    • Author(s)
      M., Yoshimoto, W., Huang, J., Saraie, K., Oe
    • Journal Title

      Mat. Res. Soc. Symp. Proc Proc.829

      Pages: 523-528

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005

    • Author(s)
      G., Feng, M., Yoshimoto, K., Oe, A., Chayahara, Y., Horino
    • Journal Title

      Jpn J. Appl. Phys Vol.44

    • NAID

      130004533539

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe
    • Journal Title

      International Conference on Nitride Semiconductors, Bremen, Germany August28-September 2

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005

    • Author(s)
      W., Huang, K., Oe, G., Feng, M., Yoshimoto
    • Journal Title

      J. Appl. Phys Vol.98

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] アドミタンス法によるGaAs/pGaAsBiヘテロ界面評価2012

    • Author(s)
      冬木琢真、柏山祥太, 尾江邦重, 吉本昌広
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] アドミタンス法によるGaAs/pGaAs_<1-x>Bi_x界面評価2012

    • Author(s)
      冬木琢真, 柏山祥太, 尾江邦重, 吉本昌広
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] High Hole Mobility in GaAs1-xBix Alloys2012

    • Author(s)
      Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      SPIE 2012 Photonic West
    • Place of Presentation
      Moscone Center (San Francisco, USA)(招待講演)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Photo-pumped GaAs_<1-x> Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      SPIE 2012 Photonic West
    • Place of Presentation
      Moscone Center(San Francisco, USA)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Organizer
      Materials Research Society 2012 Spring meeting, Symposium G
    • Place of Presentation
      Moscone Center(San Francisco, USA)
    • Year and Date
      2012-04-10
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2012 Materials Reserch Society (MRS) Spring Meeting
    • Place of Presentation
      San Francisco
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2012

    • Author(s)
      Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      奈良
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] DLTS法によるp型GaAsBi結晶中の点欠陥評価2011

    • Author(s)
      冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bix/GaAsヘテロ接合界面の急峻性の熱処理による変化2011

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xのp形ドーピング特性2011

    • Author(s)
      角浩輔, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_x/GaAsヘテロ接合界面の急峻性の熱処理による変化2011

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第58回 応用物理学関係連合大会
    • Place of Presentation
      東海大学(厚木市)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Variations in the abruptness at GaAs_<1-x>Bi_x/GaAs heterointerfaces caused by thermal annealing2011

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011

    • Author(s)
      Masahiro Yoshimoto, Y.Tominaga, Kunishige Oe
    • Organizer
      2nd International workshop on Bismuth-Containing Semiconductors : Theory, Simulation, and Experiment
    • Place of Presentation
      Univ.of Surrey (Guildford, UK)
    • Year and Date
      2011-07-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x> Bi_x mixed crystals2011

    • Author(s)
      T. Fuyuki, S. Kashiyama, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors(ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Stractural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2011

    • Author(s)
      O.Ueda, Y.Tominaga, N.Ikenaga, Masahiro Yoshimoto, K.Oe
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] p形GaAsBiの電気的特性2011

    • Author(s)
      角浩輔, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作(II)2011

    • Author(s)
      富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価(II)2011

    • Author(s)
      冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振-その発振波長の低温度依存性-2011

    • Author(s)
      富永依里子、尾江邦重, 吉本昌広
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      機械振興会館(東京)
    • Year and Date
      2011-12-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] MBE成長GaAs_<1-x>Bi_x結晶のTEM評価2011

    • Author(s)
      上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x>Bi_x mixed crystals2011

    • Author(s)
      T.Fuyuki, S.Kashiyama, Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価2011

    • Author(s)
      冬木琢真, 柏山祥太, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第58回 応用物理学関係連合大会
    • Place of Presentation
      東海大学(厚木市)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Stractural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM2011

    • Author(s)
      O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials(IPRM2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011

    • Author(s)
      M. Yoshimoto, Y. Tominaga, K. Oe
    • Organizer
      2nd International workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Univ. of Surrey(Guildford, UK)
    • Year and Date
      2011-07-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Variations in the abruptness at GaAs_<1-x> Bi_x/GaAs heterointerfaces caused by thermal annealing2011

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors(ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺(伊豆市)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Present status and future prospects of Bi-containing semiconductors2010

    • Author(s)
      M. Yoshimoto, K. Oe
    • Organizer
      1st International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      ミシガン大学(米国)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAs_<1-x> Bi_x/GaAs thin film cavity with low-temperature-dependent oscillation wavelength2010

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      2010 IEEE International Semiconductor Laser Conference
    • Place of Presentation
      全日空ホテル(京都市)
    • Year and Date
      2010-09-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第57回応用物理学関係連合大会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] TEMによるMBE成長GaAs_<1-x>Bi_x混晶の構造評価2010

    • Author(s)
      上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
    • Organizer
      第71回応用物理学会学術講会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Temperature insensitive Photoluminescence Emission Wavelength in GaAs_<1-x>Bi_x/GaAs Multiquantum Wells2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      37th International Symposium on Compound Semiconductors
    • Place of Presentation
      高松シンボルタワー(高松市)
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Present status and future prospects of Bi-containing semiconductors2010

    • Author(s)
      M.Yoshimoto, K.Oe
    • Organizer
      1st International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      ミシガン大学(米国)(招待講演)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100)GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010

    • Author(s)
      冬木琢真, 富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第57回応用物理学関係連合大会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第71回応用物理学会学術講会
    • Place of Presentation
      長崎大学(長崎市)(受賞記念講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振・その発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      機械振興会館(東京都)
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAs_<1-x>Bi_x/GaAs Thin Film Cavity with Low-Temperature-Dependent Oscillation Wavelength2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      2010 IEEE International Semiconductor Laser Conference
    • Place of Presentation
      全日空ホテル(京都市)
    • Year and Date
      2010-09-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum Wells2010

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      37th International Symposium on Compound Semiconductors
    • Place of Presentation
      高松シンボルタワー(高松市)
    • Year and Date
      2010-05-31
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of GaAs_<1-x> Bi_x/Al_yGa_<1-y> As multi-quantum well structures on GaAs2010

    • Author(s)
      T. Fuyuki, Y. Tominaga, K. Yamada, K. Oe, M. Yoshimoto
    • Organizer
      Electronic Materials Conference
    • Place of Presentation
      ノートルダム大学(米国)
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of GaAs_<1-x>Bi_x/Al_yGa_<1-y>As Multi-Quantum Well Structures on GaAs2010

    • Author(s)
      T.Fuyuki, Y Tominaga, K.Yamada, K.Oe, M.Yoshimoto
    • Organizer
      Electronic Materials Conference 2010
    • Place of Presentation
      ノートルダム大学(米国)
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xレーザの発振波長の低温度依存性2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺(伊豆市)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Structural investigation of GaAs_<1-x>Bi_x/GaAs multiquantum well structures fabricated by molecular beam epitaxy2009

    • Author(s)
      Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖 (守山市)
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 分子線エピタキシー法を用いて成長したGaAs_<1-x>Bi_xGaAs多重量子井戸の構造評価2009

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      応用物理学会結晶工学分科会2009年年末講演会
    • Place of Presentation
      学習院 (東京)
    • Year and Date
      2009-12-11
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100) GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009

    • Author(s)
      山田和弥, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs2009

    • Author(s)
      K.Yamada, Y.Tominaga,, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      関西大学 (吹田市)
    • Year and Date
      2009-05-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Fabrication of Growth of GaAs_<1-x>Bi_x/GaAs multiquantum well structure without distinct segregation for application to laser diodes with the temperature-insensitive wavelength2009

    • Author(s)
      Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2nd HOPE meeting
    • Place of Presentation
      箱根プリンスホテル (箱根町)
    • Year and Date
      2009-09-28
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on (100)GaAs substrate2009

    • Author(s)
      Kazuya Yamada, Yoriko Tominaga,Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      The 2009 InternationalMeeting for Future of Electron Devices, Kansai
    • Place of Presentation
      吹田市
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAs_<1-x>Bi_x/GaAs多重量子井戸の構造評価2009

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on(100) GaAs2009

    • Author(s)
      K. Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      関西大学(吹田市)
    • Year and Date
      2009-05-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009

    • Author(s)
      山田和弥, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] X線回折を用いたGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の評価2009

    • Author(s)
      富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      応用物理学会 第70回学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs Substrate2009

    • Author(s)
      K, Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      The 2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      吹田市
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Structures2008

    • Author(s)
      Y., Kinoshita, Y., Tominaga, K., Oe, M., Yoshimoto
    • Organizer
      TECHNICAL REPORT OF IEICE
    • Place of Presentation
      LQE OSAKADENKITUSHIN U. NEYAGAWA-SHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Growth of GaAs_<1-x>Bi_xB/GaAs multi-quantum wells with 1.3 μm photoluminescence emission2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      50th Electronic Materials Conference
    • Place of Presentation
      Santa Barbara, CA, USA
    • Year and Date
      2008-06-25
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells with 1.3μm photoluminescence emission2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
    • Organizer
      50th Electronic Materials Conference
    • Place of Presentation
      Santa Barbara, CA, USA
    • Year and Date
      2008-06-25
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_xB/GaAs多重量子井戸構造の製作2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第33回結晶成長討論会
    • Place of Presentation
      仙台市
    • Year and Date
      2008-09-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Fabrication of GaAsBi/GaAs multi-Quantum well structures with 1.3μm2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第27回電子材料シンポジウム
    • Place of Presentation
      伊豆市
    • Year and Date
      2008-07-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe. M. Yoshimoto
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2008
    • Place of Presentation
      京都市
    • Year and Date
      2008-10-10
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Fabrication of GaAsBi/GaAs multi-quantum well structures with 1.3μm2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第27回電子材料シンポジウム
    • Place of Presentation
      伊豆市
    • Year and Date
      2008-07-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第33回結晶成長討論会
    • Place of Presentation
      仙台市
    • Year and Date
      2008-09-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      IEEE Nanotechnology Materials and DevicesConference 2008
    • Place of Presentation
      京都市
    • Year and Date
      2008-10-10
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structure emitting 1.3 um wavelength2008

    • Author(s)
      Y., Tominaga, K., Oe, M., Yoshimoto
    • Organizer
      55th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-ZT-7)
    • Place of Presentation
      NIHON U. HUNABASHISHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Stmctures2007

    • Author(s)
      Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-2)
    • Place of Presentation
      AOYAMAGAKUIN U. SAGAMIHARASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaN_yAs_<1-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007

    • Author(s)
      K. Oe, et. al.
    • Organizer
      European Materials Reserch Society Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2007-05-31
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Organizer
      211th Electrochemical Society Meeting
    • Place of Presentation
      米国シカゴ
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      M., Yoshimoto, G., Feng, K., Oe
    • Organizer
      211th Electro Chemical Sosiety Meeting
    • Place of Presentation
      Chicago, IL, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Fabrication of GaAsBi/GaAs multi-quantum-well structures and their thermal stability2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      26th Electronic Materials Sympo.(EMS-26), Shiga
    • Place of Presentation
      A8
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structures(II)2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      68th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(7p-E-7)
    • Place of Presentation
      HOKKAIDOKOGYOU U. SAPPOROSHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Organizer
      211th Electrochemical Society Meeting
    • Place of Presentation
      Chicago, IL, USA
    • Year and Date
      2007-05-07
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Influence of thermal annealing treatment on 'the luminescence properties of dilute GaNAsBi alloy2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-3)
    • Place of Presentation
      AOYAMAGAKUIN U. SAGAMIHARASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaAsBi/GaAs Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy2007

    • Author(s)
      Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M. Yoshimoto
    • Organizer
      The 2007 Intemational Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaN_yAs_<1-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007

    • Author(s)
      K. Oe,.,
    • Organizer
      European Materials Reserch Society Spring Meting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2007-05-31
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaN_yAs_<i-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007

    • Author(s)
      K., Oe, G., Feng, Y., Kinoshita, M., Yoshimoto
    • Organizer
      European Materials Reserch Society Spring Meeting, 57
    • Place of Presentation
      Strasbourg, France
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Growth of GaAsBi/GaAs Multi-Quantum-Wells by Molecular Beam Epitaxy2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      The 34 th International Symposium on Compound Semiconductors(ISCS)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Organizer
      14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan, FrB3-4
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan, TuA2-2
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo
    • Organizer
      Northern Optics 2006
    • Place of Presentation
      Bergen, Norway, W39
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Low temperature dependence of light emission and absorption of GaNAsBi/GaAs DH diodes2006

    • Author(s)
      H., Kazama, Y., Tanaka, M., Yoshimoto, W., Huang, G., Feng, K., Yamashita, Y., Kondo, S., Tsuji, K., Oe
    • Organizer
      67th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(29a-B-8)
    • Place of Presentation
      RITSUMEIKAN U. KUSATSUSHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Molecular beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Organizer
      25th Electronic Materials Sympo. (EMS-25), Izu-no-kuni
    • Place of Presentation
      I5
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
    • Organizer
      32nd European Conference on Optical Communication
    • Place of Presentation
      Cannes, France, We3.P.39
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      53th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(25a-T-11)
    • Place of Presentation
      MUSASHIKOUGYOU U. TOUKYOUTO
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      (INVITED) Materials Research Society 2005 Fall Meeting, Symposium EE
    • Place of Presentation
      Boston, USA, EE 11.6
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE growth of quatemary InGaAsBi alloy", Jpn. J. Appl. Phys., Part I, Vol.45, pp.67-69, 20062005

    • Author(s)
      G., Feng, M., Yoshimoto, K., Oe, A.m, Chayahara, Y.m, Horino
    • Organizer
      66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-1)
    • Place of Presentation
      TOKUSHIMA U. TOKUSHIMASHL
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Organizer
      32nd International Symposium on Compound Semiconductors(ISCS-2005), WE P16, Rust, Germany
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      International Conference on Nitride Semiconductors
    • Place of Presentation
      Bremen, Germany, Tu-G2-6
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-insensitive refractive index of GaAsBi alloy2005

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Organizer
      66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-2)
    • Place of Presentation
      TOKUSHIMA U. TOKUSHIMASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] New semiconductor alloy GaNAsBi wit] ; temperature-insensitive bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      24th Electronic Materials Sympq.(EMS-24), Matsuyama
    • Place of Presentation
      D1
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005

    • Author(s)
      K., Oe, W., Huang, G., Feng, M., Yoshimoto
    • Organizer
      18th Annual Meeting IEEE Lasers & Electro-Optics Society(LEOS)
    • Place of Presentation
      Sydney, ThP2
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • 1.  YOSHIMOTO Masahiro (20210776)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 132 results
  • 2.  YAMASHITA Kenichi (00346115)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 12 results
  • 3.  FUKUZAWA Masayuki (60293990)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  YAMADA Masayoshi (70029320)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  柳 久雄 (00220179)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  TOMINAGA Yoriko
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 17 results
  • 7.  YAMADA Kazuya
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 8.  NAGNUMA Mitsuru
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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