Tsuchiya Toshiaki 土屋敏章

… Alternative Names

TSUCHIYA Toshiaki 土屋敏章

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Researcher Number	20304248
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2015 – 2016: 島根大学, 総合理工学研究科, 教授 2013 – 2016: 島根大学, 総合理工学研究科(研究院), 教授 2006 – 2011: 島根大学, 総合理工学部, 教授 1999 – 2003: 島根大学, 総合理工学部, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Science and Engineering Except Principal Investigator Electron device/Electronic equipment / Microdevices/Nanodevices / Science and Engineering
Keywords	Principal Investigator SiGe / マイクロ・ナノデバイス / CMOS / ヘテロ構造 / SOI / チャージポンピング法 / MOS / 表面・界面物性 / 電子デバイス・機器 / 半導体超微細化 … More / ホットキャリア / hot carrier / low-frequency noise / high speed / low power / hetero-structure / 極浅ソース・ドレイン / ヘテロ界面準位 / 低周波雑音 / 超高速 / 低消費電力 / 電子デバイス・電子機器 / ヘテロ界面 / 雑音 / 界面準位 / 揺らぎ / MOSFET … More Except Principal Investigator 電子スピン共鳴 / チャージポンピング / シリコン酸化膜界面 / 不純物原子 / 単一電子 / 電子正孔再結合 / 単一電子転送 / ドナー / ナノ物性制御 / マイクロ・ナノデバイス / ナノ・マイクロ科学 / 単一電子制御 / シングルドーパント / 高選択異方性エッチング / 不純物拡散 / in-situ不純物ドーピング / CVD低温選択成長 / 高精度エッチング / 不純物ドーピング / 選択成長 / CVD / HBT / MOS / SiGeC / SiGe Less

Development of sensitive charge-pumping spin-resonance method and its application to spin control in electron-pair recombination process
- Principal Investigator
  
  ONO YUKINORI
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shizuoka University
  University of Toyama
Development of detection and characterization techniques of single traps and innovative progress of trap physicsPrincipal Investigator
- Principal Investigator
  
  Tsuchiya Toshiaki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shimane University
Research on high-precision charge transfer using dopant atoms in silicon
- Principal Investigator
  
  Ono Yukinori
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Silicon Single-Dopant Electronics
- Principal Investigator
  
  ONO Yukinori
- Project Period (FY)
  2008 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  NTT Basic Research Laboratories
Fluctuations in Interface Properties and Noise in Nano-Scaled DevicesPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Shimane University
Pioneer study on hetero-interfaces to realize non-classical nano-hetero-devicesPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shimane University
人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
IV族半導体ヘテロ構造におけるホットキャリアの挙動に関する研究Principal Investigator
- Principal Investigator
  
  土屋敏章
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shimane University
Research on extremely low-power and scaled Si-based CMOS devices making the best use of SiGe and SOIPrincipal Investigator
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Shimane University

All 2017 2016 2015 2014 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation

[Journal Article] Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory2017
- Author(s)
  T. Tsuchiya and P. M. Lenahan
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56(3) Issue: 3 Pages: 031301-031301
- DOI
  10.7567/jjap.56.031301
- NAID
  210000147460
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Journal Article] Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor2017
- Author(s)
  M.Hori, T.Tsuchiya, Y.Ono
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10 Issue: 1 Pages: 015701-015701
- DOI
  10.7567/apex.10.015701
- NAID
  210000135738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-15K13970
[Journal Article] Time-domain charge pumping on silicon-on-indulator MOS devices2017
- Author(s)
  T.Watanabe, M.Hori, T.Tsuchiya, A.Fujiwara, Y.Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 56 Issue: 1 Pages: 011303-011303
- DOI
  10.7567/jjap.56.011303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-15K13970
[Journal Article] チャージポンピング法による単一界面トラップ（欠陥）の検出と評価2016
- Author(s)
  土屋敏章
- Journal Title
  
  応用物理
  
  Volume: 85(5) Pages: 422-426
- NAID
  130007715381
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289105
[Journal Article] Characterization of Interface Defects by the Charge Pumping Technique,2016
- Author(s)
  Toshiaki Tsuchiya
- Journal Title
  
  ECS Transactions
  
  Volume: 74(4) Issue: 4 Pages: 29-37
- DOI
  10.1149/07504.0029ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289105
[Journal Article] Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method2015
- Author(s)
  T. Tsuchiya, Y. Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DC01-04DC01
- DOI
  10.7567/jjap.54.04dc01
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289098
[Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain2015
- Author(s)
  T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E98.C Issue: 5 Pages: 390-394
- DOI
  10.1587/transele.E98.C.390
- NAID
  130005067742
- ISSN
  0916-8524, 1745-1353
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13970, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-25706003
[Journal Article] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method2015
- Author(s)
  Toshiaki Tsuchiya, Yukinori Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54(4S)
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26289105
[Journal Article] Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory2015
- Author(s)
  Toshiaki Tsuchiya
- Journal Title
  
  ECS Transactions
  
  Volume: 69(10) Issue: 10 Pages: 145-154
- DOI
  10.1149/06910.0145ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289105
[Journal Article] Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current2015
- Author(s)
  M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 4
- DOI
  10.1063/1.4906997
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-25706003, KAKENHI-PROJECT-26289105
[Journal Article] Analysis of electron capture process in charge pumping sequence using time domain measurements2014
- Author(s)
  M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 26
- DOI
  10.1063/1.4905032
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-25706003, KAKENHI-PROJECT-26289105
[Journal Article] Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs2011
- Author(s)
  T. Tsuchiya
- Journal Title
  
  Key Engineering Materials
  
  Volume: Vol.470 Pages: 201-206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Interactions between Interface Traps in Electron Capture/Emission Processes : Deviation from Charge Pumping Current Based on the Shockley2011
- Author(s)
  T.Tsuchiya
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.4 Issue: 9 Pages: 094104-094104
- DOI
  10.1143/apex.4.094104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  T. Tsuchiya
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.49
- NAID
  40017176026
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  T.Tsuchiya
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: Vol.49
- NAID
  40017176026
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009
- Author(s)
  土屋敏章
- Journal Title
  
  応用物理
  
  Volume: vol.78 Pages: 868-872
- NAID
  10025088628
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009
- Author(s)
  土屋敏章
- Journal Title
  
  応用物理 78(9)
  
  Pages: 868-872
- NAID
  10025088628
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009
- Author(s)
  土屋敏章
- Journal Title
  
  応用物理 78(9)
  
  Pages: 868-872
- NAID
  10025088628
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20241036
[Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009
- Author(s)
  土屋敏章
- Journal Title
  
  応用物理第78巻,第9号
  
  Pages: 868-872
- NAID
  10025088628
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Journal Title
  
  Thin Solid Films vol. 517, no. 1
  
  Pages: 346-349
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Journal Title
  
  Thin Solid Films vol.517,no.1
  
  Pages: 346-349
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Influence of Grain Boundaries on the Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains2007
- Author(s)
  T. Tsuchiya, T. Miura, T. Yamai, G. Kawachi, and M. Matsumura
- Journal Title
  
  Jpn. J. Appl. Plys 46
  
  Pages: 1312-1317
- NAID
  10018902148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. vol.46,no.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Influence of Grain Boundaries on the Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains2007
- Author(s)
  T. Tsuchiya, T. Miura, T. Yamai, G. Kawachi, and M. Matsumura
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1312-1317
- NAID
  10018902148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
- Journal Title
  
  Jpn.J.Appl.Phys. vol.46, no.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] "Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps,"2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. vol. 46, no. 8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 83-84
- NAID
  10018312310
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生,"2006
- Author(s)
  土屋敏章,櫻庭政夫,室田淳一
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
- Journal Title
  
  IEEE Semiconductor Interface Specialist Conference (SISC 2006)
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
  
  Pages: 21-24
- NAID
  110004813188
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Thin Solid Films Vol.508・Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Journal Title
  
  Thin Solid Films Vol. 508, Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.508,Issues1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  T.Tsuchiya, M.Sakuraba, and J.Murota
- Journal Title
  
  Thin Solid Films Vol.508, Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Thin Solid Films Vol. 508・Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
- Journal Title
  
  IEEE Semiconductor Interface Specialist Conference (SISC 2006)
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
  
  Pages: 21-24
- NAID
  110004813188
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] ,"BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET,"2006
- Author(s)
  竹廣忍,櫻庭政夫,室田淳一,土屋敏章
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 83-84
- NAID
  10018312310
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Author(s)
  T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami, Y.Ohji
- Journal Title
  
  Jpn.J.Appl.Phys. (印刷中)
- NAID
  40017176026
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Author(s)
  T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
- Journal Title
  
  Jpn. J. Appl. Phys. (印刷中)
- NAID
  40017176026
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] シリコンにおけるチャージポンプー電荷とスピンの室温極限操作に向けてー2017
- Author(s)
  小野行徳, 堀匡寛, 土屋敏章
- Organizer
  第29回シリサイド系半導体研究会
- Place of Presentation
  八洲学園大学（神奈川県・横浜市）
- Invited
- Data Source
  KAKENHI-PROJECT-15K13970
[Presentation] Silicon-on-insulator MOSデバイスにおける実時間チャージポンピングの応用2017
- Author(s)
  渡辺時暢，堀匡寛，土屋敏章，藤原聡，小野行徳
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 原子スケール信頼性に関わるMOS界面近傍の単一欠陥評価2017
- Author(s)
  土屋敏章
- Organizer
  薄膜材料デバイス研究会山陰特別研究会
- Place of Presentation
  青嵐荘，奥出雲
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Silicon-on-insulator MOS デバイスにおける実時間チャージポンピングの応用2017
- Author(s)
  渡邉時暢, 堀匡寛, 土屋敏章, 藤原聡, 小野行徳
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Data Source
  KAKENHI-PROJECT-15K13970
[Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method2016
- Author(s)
  土屋敏章,小野行徳
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15K13970
[Presentation] Detection and Characterization of Single MOS Interface Traps by the Charge Pumping Method2016
- Author(s)
  Toshiaki Tsuchiya
- Organizer
  International Meeting for Future of Electron Devices
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Year and Date
  2016-06-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 高感度チャージポンピングEDMR法の開発2016
- Author(s)
  堀　匡寛，成松諒一，土屋敏章，小野行徳
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 界面トラップ数の真の値とばらつき，および従来のチャージポンピング理論による値との比較2016
- Author(s)
  土屋敏章
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Characterization of Interface Defects by the Charge Pumping Technique2016
- Author(s)
  Toshiaki Tsuchiya
- Organizer
  The 14th Symp. on High Purity and High Mobility Semiconductors, PRiME 2016/The 230th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] チャージポンピング法による単一MOS界面トラップの個別検出と解析－原子スケールの視点で新たなトラップ物理を目指して－2016
- Author(s)
  土屋敏章
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会，応用物理学会シリコンテクノロジ分科会共催
- Place of Presentation
  機械振興会館，東京
- Year and Date
  2016-11-10
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 電子捕獲放出過程における界面トラップ間の相互作用2016
- Author(s)
  土屋敏章
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] チャージポンピング（CP）法によるMOS界面欠陥評価：CP法の原理的改善と単一欠陥評価への進展2016
- Author(s)
  土屋敏章
- Organizer
  第13回薄膜材料デバイス研究会
- Place of Presentation
  龍谷大学響都ホール校友会館，京都
- Year and Date
  2016-10-21
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 高感度チャージポンピングEDMR法の開発2016
- Author(s)
  堀匡寛, 成松諒一, 土屋敏章, 小野行徳
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13970
[Presentation] MOS界面トラップのエネルギー分布形状に及ぼす使用パラメータ値の影響2016
- Author(s)
  田代晃之，土屋敏章
- Organizer
  応用物理学会中国四国支部2016年度学術講演会
- Place of Presentation
  岡山大学津島キャンパス，岡山
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method2016
- Author(s)
  土屋敏章，小野行徳
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] 単一界面トラップの準位密度分布：”U字型“分布は定説か？”2016
- Author(s)
  土屋敏章，P. M. レナハン
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory2015
- Author(s)
  Toshiaki Tsuchiya
- Organizer
  The 228th Electrochemical Society Meeting, the Symp. on ULSI Process Integration 9
- Place of Presentation
  Hyatt Regency Phoenix & Phoenix Convention Center, Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Distribution of the energy levels of single interface traps in nanoscale MOSFETs and a comparison of the actual number of traps with the values determined by conventional charge pumping theory2015
- Author(s)
  Toshiaki Tsuchiya,
- Organizer
  46th IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  Key Bridge Marriott, Arlington, VA, USA
- Year and Date
  2015-12-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Detection of Single Traps and Characterization of Individual Traps: Beginning of “Atomistic Reliability Physics”2015
- Author(s)
  Toshiaki Tsuchiya
- Organizer
  The 4th International Symposium on Next-Generation Electronics
- Place of Presentation
  National Taiwan Univ. of Science and Technology, Taipei, Taiwan
- Year and Date
  2015-05-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Detection and Characterization of Single MOS Interface Traps2015
- Author(s)
  Toshiaki Tsuchiya
- Organizer
  IEEE EDS DL-Workshop –Carrier Trapping Origin of Device Degradation-
- Place of Presentation
  Hiroshima Univ., Hiroshima
- Year and Date
  2015-08-26
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] MOS界面近傍の個々のトラップ評価：CP法による単一Pbセンターの直接観測･評価と多値RTN関与の個別トラップ評価2015
- Author(s)
  土屋敏章
- Organizer
  独立行政法人日本学術振興会半導体界面制御技術第154委員会第95回研究会
- Place of Presentation
  CIC東京，東京
- Year and Date
  2015-05-29
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] チャージポンピング法によるMOS界面評価2014
- Author(s)
  土屋敏章
- Organizer
  産業技術総合研究所SiC酸化膜界面検討会
- Place of Presentation
  発明会館（虎の門）
- Year and Date
  2014-06-26
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Fluctuations in Electronic Properties of Individual Interface Traps in Nanoscale MOSFETs2010
- Author(s)
  T. Tsuchiya
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2010
- Author(s)
  T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学(仙台)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Direct Observation of Fluctuation in the Carrier Capture Process of Single Interface Traps in MOSFETs2010
- Author(s)
  M.Hu, Y.Morimural, T.Mogami, T.Tsuchiya
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2010
- Author(s)
  T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009
- Author(s)
  T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami, Y.Ohji
- Organizer
  39th European Solid-State Device Research Conference
- Place of Presentation
  アテネ(ギリシャ)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2009
- Author(s)
  T. Tsuchiya
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] 界面準位を数個含む極微細MOSFETのチャージポンピング特性2009
- Author(s)
  森村由太, 最上徹, 大路譲, 土屋敏章
- Organizer
  応用物理学会中国四国支部 2009年度学術講演会
- Place of Presentation
  広島大学(広島)
- Year and Date
  2009-08-01
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009
- Author(s)
  T. Tsuchiya
- Organizer
  39th European Solid-State Device Research Conference
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009
- Author(s)
  T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
- Organizer
  Proc. of the 39th European Solid-State Device Research Conference
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] MOSFETの界面準位密度に及ぼすチャネルドープの影響2009
- Author(s)
  嘉藤俊宏, 最上徹, 大路譲, 土屋敏章
- Organizer
  応用物理学会中国四国支部 2009年度学術講演会
- Place of Presentation
  広島大学(広島)
- Year and Date
  2009-08-01
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] ナノスケールMOSFETにおけるSi/SiO2界面準位数の揺らぎ2009
- Author(s)
  森祐樹, 最上徹, 大路譲, 土屋敏章
- Organizer
  応用物理学会中国四国支部 2009年度学術講演会
- Place of Presentation
  広島大学(広島)
- Year and Date
  2009-08-01
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed inthe Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  39th IEEE Semiconductor Interface SpecialistConference (SISC 2008)
- Place of Presentation
  San Diego (USA)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
- Organizer
  4th International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  応用物理学会中国四国支部2008年度学術講演会
- Place of Presentation
  松山
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] シリコン及びシリコン系ヘテロMOSデバイスの信頼性物理2008
- Author(s)
  土屋敏章
- Organizer
  第5回薄膜材料デバイス研究会
- Place of Presentation
  奈良(招待講演)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  応用物理学会中国四国支部2008年度学術講演会
- Place of Presentation
  松山
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  第10回IEEE広島支部学生シンポジウム(IEEE HISS)
- Place of Presentation
  広島
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego (USA)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  第10回IEEE広島支部学生シンポジウム(IEEE HISS)
- Place of Presentation
  広島
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] MOSデバイスにおける信頼性物理とヘテロ界面に関する研究2008
- Author(s)
  土屋敏章
- Organizer
  応用物理学会中国四国支部貢献賞受賞記念講演
- Place of Presentation
  松山
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-20241036
[Presentation] "シリコン及びシリコン系ヘテロMOSデバイスの信頼性物理,"2008
- Author(s)
  土屋敏章
- Organizer
  第5回薄膜材料デバイス研究会
- Place of Presentation
  奈良100年会館
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu (Taiwan)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] MOSデバイスにおける信頼性物理とヘテロ界面に関する研究2008
- Author(s)
  土屋敏章
- Organizer
  応用物理学会中国四国支部貢献賞受賞記念講演
- Place of Presentation
  松山
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] シリコン及びシリコン系ヘテロMOSデバイスの信頼性物理(招待講演)2008
- Author(s)
  土屋敏章
- Organizer
  第5回薄膜材料デバイス研究会
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu (Taiwan)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "MOSデバイスにおける信頼性物理とヘテロ界面に関する研究,"2008
- Author(s)
  土屋敏章
- Organizer
  応用物理学会中国四国支部貢献賞受賞記念講演
- Place of Presentation
  メルパルク松山,松山
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2007
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  Int'l Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille (France)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  Int'l Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille(France)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2007
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain,"2006
- Author(s)
  S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain2006
- Author(s)
  S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress,"2006
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Time domain measurement of the charge pumping current
- Author(s)
  Masahiro Hori, Tokinobu Watanabe, Toshiaki Tsuchiya, Yukinori Ono
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village (Honolulu)
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] ナノスケールMOSFETにおいて多値RTNに関与している個々の酸化膜トラップのキャラクタリゼーション
- Author(s)
  土屋敏章
- Organizer
  映像情報メディア学会・電子情報通信学会共催情報センシング・集積回路合同研究会
- Place of Presentation
  大社文化プレイスうらら館（出雲市）
- Year and Date
  2014-07-03 – 2014-07-04
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Time-domain measurements of charge pimping current
- Author(s)
  M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
- Organizer
  2014 Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-25289098
[Presentation] 電子捕獲履歴現象を利用したナノスケールMOSFETにおける多値ランダムテレグラフノイズの解析
- Author(s)
  土屋敏章
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  東北大学未来科学技術共同研究センター（仙台）
- Year and Date
  2014-10-16 – 2014-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] チャージポンピング電流の実時間計測による電子放出，再結合過程の直接観察
- Author(s)
  堀　匡寛，渡辺時暢，土屋敏章，小野行徳
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method
- Author(s)
  Toshiaki Tsuchiya, Yukinori Ono
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method
- Author(s)
  T. Tsuchiya, Y. Ono
- Organizer
  2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25289098
[Presentation] 単一Si/SiO2界面トラップのチャージポンピング(CP)特性：Pb0センターの電気的直接観測と従来CP理論の原理的改善
- Author(s)
  土屋敏章，小野行徳
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] チャージポンピング電流の実時間計測による電子捕獲過程の解析
- Author(s)
  堀　匡寛，渡辺時暢，土屋敏章，小野行徳
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Evaluation of Accuracy of Time Domain Charge Pumping
- Author(s)
  Tokinobu Watanabe, Masahiro Hori1, Toshiaki Tsuchiya, Yukinori Ono
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Kanazawa Bunka Hall
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-26289105
[Presentation] Evaluation of accuracy of time-domain charge pumping
- Author(s)
  T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
- Organizer
  2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Kanazawa, Japan
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-25289098

1. MUROTA Junichi (70182144)

# of Collaborated Projects: 5 results

# of Collaborated Products: 29 results
2. ONO Yukinori (80374073)

# of Collaborated Projects: 4 results

# of Collaborated Products: 22 results
3. SAKURABA Masao (30271993)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. MATSUURA Takashi (60181690)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. HORI Masahiro (50643269)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
6. TAKEHIRO Shinobu

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
7. MISHIMA Seiji

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
8. YOSHIDA Keiichi

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
9. MORI Yuki

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
10. HORIGUCHI Seiji (60375219)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. NISHIGUCHI Katsuhiko (00393760)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. YAMAGUCHI Toru (30393763)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. MOHAMMED Khalafalla (70463627)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 栗野浩之 (70282093)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 小柳光正 (60205531)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. MOGAMI Tohru

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
17. MORIMURA Yuta

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
18. 杉山直治

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 小野昭一

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 櫻場政夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 63 results

Tsuchiya Toshiaki 土屋 敏章

TSUCHIYA Toshiaki 土屋 敏章

Research Projects

Research Products

Co-Researchers

Development of sensitive charge-pumping spin-resonance method and its application to spin control in electron-pair recombination process

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Development of detection and characterization techniques of single traps and innovative progress of trap physicsPrincipal Investigator

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Research on high-precision charge transfer using dopant atoms in silicon

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Silicon Single-Dopant Electronics

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Fluctuations in Interface Properties and Noise in Nano-Scaled DevicesPrincipal Investigator

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Pioneer study on hetero-interfaces to realize non-classical nano-hetero-devicesPrincipal Investigator

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人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

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IV族半導体ヘテロ構造におけるホットキャリアの挙動に関する研究Principal Investigator

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Research on extremely low-power and scaled Si-based CMOS devices making the best use of SiGe and SOIPrincipal Investigator

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[Journal Article] Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory2017

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NAID

Data Source

[Journal Article] Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor2017

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NAID

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[Journal Article] Time-domain charge pumping on silicon-on-indulator MOS devices2017

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[Journal Article] チャージポンピング法による単一界面トラップ（欠陥）の検出と評価2016

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NAID

Tsuchiya Toshiaki 土屋敏章

TSUCHIYA Toshiaki 土屋敏章