FURUKAWA Yuzo 古川雄三

Researcher Number	20324486
Affiliation (based on the past Project Information) *help	2009 – 2010: Toyohashi University of Technology, 工学部, 准教授 2008: Toyohashi University of Technology, 工学部, 講師 2000 – 2005: 豊橋技術科学大学, 工学部, 助手 2003: Toyohashi University of Technology, Dept. of Electrical and Electronic Engineering, Research Associate 2001: 豊橋技術科学大学, 工学部, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Engineering / Science and Engineering / Science and Engineering / Applied optics/Quantum optical engineering
Keywords	Principal Investigator GaPN / GaAsN / OMVPE / モノリシックOEIC / 量子ドット構造 / 歪量子井戸構造 / キャリア濃度低減化 / MBE / 光・電子集積回路(OEIC) / Si … More / III-V-N混晶 / MEE / 格子整合 / 微傾斜基板 / 高温水素エッチング / 分子線エピタキシー / BAlN / SiC / AlN … More Except Principal Investigator GaPN / 格子整合 / InGaPN / motion detection / 局所適応 / アナログ集積回路 / エッジ検出 / 動き検出 / 脳機能 / GaAs-on-Si / GaAsPN / 無転位 / III-V-N混晶 / optoelectronic integrated system / light emitting diode / MOS FET / device process / electric conductivity control / point defect / III-V-N alloy / 超並列集積回路 / GaP LED / Si-GaPN / Si-III-V-N融合システム / 伝導度制御 / 光学定数 / 光-電子融合シスデム / GaPNダブルヘテロ構造LED / 格子間原子 / 発光効率 / 光-電子融合システム / 発光ダイオード / MOSトランジスタ / デバイスプロセス / 電気伝導度制御 / 点欠陥 / III-V-N / shape recognition / motion-detection / edge-detection / analog LSI / biological retinas / vision / parallel networks / 超高集積回路 / オプティカルフロー / 特徴抽出 / 特性ばらつき / 広ダイナミックレンジ / 特徴点抽出 / アナログLSI / 視覚機能 / 形状認識 / 網膜・脳機能 / 超並列ネットワーク / analog integrated circuit / analog network / dendrite / edge detection / brain / retina / 集積回路 / 広域明暗順応 / 局所明暗順応 / SPICEシミュレーション / アナログ・ネットワーク / 相関モデル / 内網膜 / 外網膜 / アナログネットワーク / 樹状突起 / 網膜機能 / III-V-N compound semiconductor / dislocation-free / lattice-matching / lattice-mismatch / hetero-epitaxy / すべり転位 / ミスフィット転位 / 熱膨張係数差 / GaP / Si / 臨界膜厚 / 光電子融合集積回路 / ダブルヘテロ構造 / 量子井戸構造 / GaAsN / III-V-N半導体 / 格子不整合 / ヘテロエピタキシー / 光電子集積回路 / 深い順位 / ヘテロエピキタシー / シリコン Less

超並列光・電子集積回路の基本機能の実現Principal Investigator
- Principal Investigator
  
  古川雄三
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyohashi University of Technology
Device Process for Integrated Systems Composed of Dislocation-Free III-V-N Alloys and Silicon
- Principal Investigator
  
  YONEZU Hiroo
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Toyohashi University of Technology
化合物半導体-シリコン無転位一体化層の高品質化と光デバイスへの応用
- Principal Investigator
  
  YONEZU Hiroo
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Toyohashi University of Technology
格子整合系ヘテロエピタキシーによる無転位窒化物半導体層の形成Principal Investigator
- Principal Investigator
  
  古川雄三
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Toyohashi University of Technology
Massively Parallel Intelligent Preprocessing
- Principal Investigator
  
  YONEZU Hiroo
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Toyohashi University of Technology
Fabrication of Functional Heteroepitaxial Layers Embedding Devices
- Principal Investigator
  
  YONEZU Hiroo
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Toyohashi University of Technology
Implementation of Analog Integrated Circuits for Motion-Detection Network Based on Retina and Brain
- Principal Investigator
  
  YONEZU Hiroo
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Toyohashi University of Technology

All 2010 2009 2008 2006 2005 2004

All Journal Article Presentation

[Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy2010
- Author(s)
  K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, H.Yonezu, A.Wakahara, F.Ishikawa, M.Kondow
- Journal Title
  
  Journal of Vacuum Science and Technology B (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy2010
- Author(s)
  K.Umeno, Y.Furukawa, N.Urakami, R.Noma, S.Mitsuyoshi, A.Wakahara, H.Yonezu
- Journal Title
  
  Physica E (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Electrical and luminsence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy2010
- Author(s)
  S.Mitsuyoshi, K.Umeno, Y.Furukawa, N.Urakami, A.Wakahara, H.Yonezu
- Journal Title
  
  Physica Status Solidi C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy2010
- Author(s)
  Y.Takagi, Y.Furukawa, A.Wakahara, H.Kan
- Journal Title
  
  Journal of Applied Physics (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE2010
- Author(s)
  K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, H.Yonezu, A.Wakahara
- Journal Title
  
  Journal of Crystal Growth 312(1)
  
  Pages: 231-237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Growth of Pit-Free GaP on Si by Suppression of a Surface Reaction at an Initial Growth Stage2009
- Author(s)
  K. Yamane. T. Kobayashi, Y. Furukawa, H. Okada, H. Yonezu, A. Wakahara
- Journal Title
  
  Journal of Crystal Growth 311(3)
  
  Pages: 794-797
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates2009
- Author(s)
  K.Umeno, Y.Furukawa, A.Wakahara, R.Noma, H.Okada, H.Yonezu, Y.Takagi, H.Kan
- Journal Title
  
  Journal of Crystal Growth 311(7)
  
  Pages: 1748-1754
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] III-V Epitaxy on Si for Photonics Applications2008
- Author(s)
  H. Yonezu, Y. Furukawa, A. Wakahara (Invited)
- Journal Title
  
  Journal of Crystal Growth 310(23)
  
  Pages: 4757-4762
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Doping Control and Evaluation of pn-junction LED in GaPN Grown by OMVPE2008
- Author(s)
  S. Halakenaka, Y. Nakanishi, A. Wakahara, Y. Furukawa, H. Okada
- Journal Title
  
  Journal of Crystal Growth 310(23)
  
  Pages: 5147-5150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360158
[Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006
- Author(s)
  D.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
- Journal Title
  
  Applied Physics Letters Vol. 88,No. 10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006
- Author(s)
  Y.Furukawa, H.Yonezu, A.Wakahara, Y.Yoshizumi, Y.Morita, A.Sato
- Journal Title
  
  Applied Physics Letters Vol. 88, No. 14
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006
- Author(s)
  Y.Furukawa, H.Yonezu, A.Wakahara Y.Yoshizumi, Y.Morita, A.Sato
- Journal Title
  
  Applied Physics Letters (to be published)
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Growth of Low-Dislocation-Density AlN under Ga Irradiation2006
- Author(s)
  A.Nakajima, Y.Furukawa, H.Yokoya, S.Yamaguchi, H.Yonezu
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45,No.4A(to be published)
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006
- Author(s)
  D.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
- Journal Title
  
  Applied Physics Letters Vol. 88, No. 10
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Analog Integrated Circuit for Detection of an Approaching Object with Simple-Shape Recognition Based on Lower Animal Vision2006
- Author(s)
  K.Nishio, H.Yonezu, Y.Furukawa
- Journal Title
  
  IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences Vol.E89-A, No.2
  
  Pages: 416-427
- NAID
  110004656487
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Analog Integrated Circuit for Edge Detection with Wide Dynamic Range Based on Vertebrate Outer Retina2006
- Author(s)
  S.Sawa, K.Nishio, Y.Furukawa, H.Yonezu, J.-K.Shin
- Journal Title
  
  Intelligent Automation and Soft Computing Vol.11(to be published)
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006
- Author(s)
  U.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
- Journal Title
  
  Applied Physics Letters Vol.88,No.10
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006
- Author(s)
  Y.Furukawa, H.Yonezu, A.Wakahara, Y.Yoshizumi, Y.Morita, A.Sato
- Journal Title
  
  Applied Physics Letters Vol. 88,No. 14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Properties of Ga-Interstitial Defects in Al_xGa_<1-x>N_yP_<1-y>2005
- Author(s)
  N.Q.Thinh, I.P.Vorona, I.A.Buyanova, W.M.Chen, Sukit Limpijumnong, S.B.Zhang, Y.G.Hong, H.P.Xin, C.W.Tu, A.Utsumi, Y.Furukawa, S.Moon, A.Wakahara, H.Yonezu
- Journal Title
  
  Physical Review B Vol.71,No.12
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Optical Properties of Lattice Matched InxGa1-xP1-yNy Heteroepitaxial Layers on GaP2005
- Author(s)
  T.Imanishi, A.Wakahara, S.-M.Kim, H.Yonezu, Y.Furukawa
- Journal Title
  
  Phys.Stat.Sol.(a) Vol.202, No.5
  
  Pages: 854-858
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Dislocation- Free In_xGa_<1-x>P_<1-y>N_y/GaP_<1-z>N_z Double -Heterostructure Light Emitting Diode on Si Substrate2005
- Author(s)
  S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44,No.4A
  
  Pages: 1752-1755
- NAID
  10015470221
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate2005
- Author(s)
  S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, No. 4A
  
  Pages: 1752-1755
- NAID
  130004533576
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005
- Author(s)
  S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44,No.12
  
  Pages: 8309-8313
- NAID
  10016958323
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Dislocation-Free In_xGa_<1-x>P_<1-y>N_y/GaP_<1-z>N_z Double-Heterostructure Light Emitting Diode on Si Substrate2005
- Author(s)
  S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44,No. 4A
  
  Pages: 1752-1755
- NAID
  10015470221
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005
- Author(s)
  S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, No. 12
  
  Pages: 8309-8313
- NAID
  10016958323
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Elemental Devices, Circuits and Processes for a Monolithic Si/III-V-N Alloy OEIC2005
- Author(s)
  H.Yonezu, Y.Furukawa, H.Abe, Y.Yoshikawa, S.-Y.Moon, A.Utsumi, Y.Yoshizumi, A.Wakahara, M.Ohtani
- Journal Title
  
  Optical Materials Vol. 27
  
  Pages: 799-803
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Elemental Devices, Circuits and Processes for a Monolithic Si/III-V-N Alloy OEIC2005
- Author(s)
  H.Yonezu, Y.Furukawa, H.Abe, Y.Yoshikawa, S.-Y.Moon, A.Utsumi, Y.Yoshizumi, A.Wakahara, M.Ohtani
- Journal Title
  
  Optical Materials Vol.27
  
  Pages: 799-803
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Step Control of Vicinal 6H-SiC(0001) Surface by H_2 Etching2005
- Author(s)
  A.Nakajima, H.Yokoya, Y.Furukawa, H.Yonezu
- Journal Title
  
  Journal of Applied Physics Vol.97
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Growth of B_xAl_<1-x>N Layers Using Decaborane on SiC Substrates2005
- Author(s)
  A.Nakajima, Y.Furukawa, H.Yokoya, H.Yonezu
- Journal Title
  
  Journal of Crystal Growth Vol.278
  
  Pages: 437-442
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effects of Rapid Thermal Annealing on Optical Properties of GaN_xP_<1-x> Alloys Grown by Solid Source Molecular Beam Epitaxy2005
- Author(s)
  M.Izadifard, I.A.Buyanova, J.P.Bergman, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
- Journal Title
  
  Semiconductor Science and Technology Vol.20
  
  Pages: 353-356
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005
- Author(s)
  S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44,No. 12
  
  Pages: 8309-8313
- NAID
  10016958323
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Improvement of Crystalline Quality of GaPN Layers Grown by RF-MBE with Ion Collector2005
- Author(s)
  A.Utsumi, Y.Furukawa, H.Yonezu, Y.Yoshizumi, Y.Morita, A.Wakahara
- Journal Title
  
  Phys.Stat.Sol.(a) Vol.202, No.5
  
  Pages: 758-762
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Analog Integrated Circuit for Edge Detection with Massively Parallel Processing Based on Vertebrate Outer Retina2005
- Author(s)
  Y.Furukawa, H.Yonezu, S.Sawa, K.Nishio, J.-K.Shin
- Journal Title
  
  Sensors and Materials Vol.17,No.5
  
  Pages: 299-306
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Analog Integrated Circuit for Motion Detection of Approaching Object Based on the Insect Visual System2004
- Author(s)
  K.Nishio, H.Yonezu, M.Ohtani, H.Yamada, Y.Furukawa
- Journal Title
  
  Opt.Rev. Vol.11, No.1
  
  Pages: 38-47
- NAID
  10012050685
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Growth of High-Quality AIN with Low Pit Density on SiC Substrates2004
- Author(s)
  A.Nakajima, Y.Furukawa, S.Koga, H.Yonezu
- Journal Title
  
  J.Cryst.Growth Vol.265
  
  Pages: 351-356
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] GaPN-GaP Double Heterostructure Light Emitting Diode Grown on GaP Substrate by Solid-Source Molecular Beam Epitaxy2004
- Author(s)
  S.Y.Moon, A.Utsumi, H.Yonezu, Y.Furukawa, T.Ikeda, A.Wakahara
- Journal Title
  
  Phys.Stat.Sol.(a) Vol.201, No.12
  
  Pages: 2695-2698
- Data Source
  KAKENHI-PROJECT-15002007
[Journal Article] Growth of High-Quality A1N with Low Pit Density on SiC Substrates2004
- Author(s)
  A.Nakajima, Y.Furukawa, S.Koga, H.Yonezu
- Journal Title
  
  Journal of Crystal Growth Vol. 265
  
  Pages: 351-356
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15002007
[Presentation] 固体ソースMBE法によるAlPNの成長2010
- Author(s)
  河合剛, 山根啓輔, 古川雄三, 岡田浩, 若原昭浩
- Organizer
  第57回応用物理関係連合講演会, 18p-TW-13, p. 15-091
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Si/III-V-N/Siヘテロ界面を有するLEDの駆動電圧の低減2010
- Author(s)
  山根啓輔, 山田真太郎, 古川雄三, 岡田浩, 若原昭浩
- Organizer
  第57回応用物理関係連合講演会, 19a-TW-11, p. 15-104
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] 自己形成InGaAsN/GaP量子ドットの発光特性に与える熱処理効果2010
- Author(s)
  浦上法之, 梅野和行, 光吉三郎, 深見太志, 米津宏雄, 古川雄三, 若原昭浩
- Organizer
  第57回応用物理関係連合講演会, 17p-TW-12, p. 15-060
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] 光出力を有したSi/III-V-N/Si構造上のモノリシック光・電子集積回路2010
- Author(s)
  野口健太, 田中誠造, 山根啓輔, 出口裕輝, 古川雄三, 岡田浩, 若原昭浩, 米津宏雄
- Organizer
  第57回応用物理関係連合講演会, 19a-TW-11, p. 15-105
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] 自己形成InGaAsN/GaP量子ドットに対する量子準位の解析2010
- Author(s)
  深見太志, 梅野和行, 浦上法之, 光吉三郎, 古川雄三, 米津宏雄, 若原昭浩
- Organizer
  第57回応用物理関係連合講演会, 17p-TW-13, p. 15-061
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] MBE成長したGaAsN/GaPN歪量子井戸の発光特性2009
- Author(s)
  梅野和行, 光吉三郎, 浦上法之, 岡田浩, 米津宏雄, 古川雄三, 若原昭浩
- Organizer
  第70回応用物理学会学術講演会, 9p-C-3, p. 302
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Reduction of impurity concentration in Si epilayer and fabrication of photodiodes for monolithic optoelectronic integrated circuits2009
- Author(s)
  K.Noguchi, K.Yamane, S.Iwahashi, Y.Furukawa, H.Okada, A.Wakahara
- Organizer
  28th Electronic Materials Symposium (EMS-28) C5, pp. 67-68
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] 自己形成InGaAsN/GaPN量子ドットの成長と発光特性2009
- Author(s)
  浦上法之・野間亮佑・梅野和行・光吉三郎・岡田浩・古川雄三・若原昭浩
- Organizer
  電子情報通信学会, 信学技報, vol. 109, no. 23, ED2009-31, pp. 71-76
- Place of Presentation
  豊橋技術科学大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Si基板上無転位発光素子に向けたGaPN/GaP/Si構造におけるGaP中間層依存性2009
- Author(s)
  山根啓輔, 古川雄三, 岡田浩, 若原昭浩
- Organizer
  第70回応用物理学会学術講演会, 9p-C-16, p. 306
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Optimization of shutter sequence on migration enhanced epitaxy for pseudomorphic GaP on Si with low dislocation density2009
- Author(s)
  K.Yamane, T.Kawai, Y.Furukawa, H.Okada, A.Wakahara
- Organizer
  28th Electronic Materials Symposium (EMS-28) E5, pp. 133-134
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Luminescence characterization of p-GaPN and application for modulation p-doped GaAsN/GaPN highly strained quantum wells2009
- Author(s)
  光吉三郎, 梅野和行, 浦上法之, 米津宏雄, 岡田浩, 古川雄三, 若原昭浩
- Organizer
  28th Electronic Materials Symposium (EMS-28) A15, pp. 35-36
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Si上III-Vデバイス用GaPN/GaP/Si構造のMBE成長2009
- Author(s)
  河合剛, 山根啓輔, 古川雄三, 岡田浩, 若原昭浩
- Organizer
  第39回結晶成長国内会議 (NCCG-39) 予稿集, 12PS32, p. 70
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] 「講演奨励賞受賞記念講演」MBE成長したGaAsN混晶の発光特性に与えるMg添加効果2009
- Author(s)
  梅野和行, 浦上法之, 光吉三郎, 岡田浩, 米津宏雄, 古川雄三, 若原昭浩
- Organizer
  第70回応用物理学会学術講演会, 9p-C-1, p. 301
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Growth and luminescence characterization of dilute InPN alloys grown by solid source molecular beam epitaxy2009
- Author(s)
  K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, F.Ishikawa, H.Yonezu, A.Wakahara, M.Kondow
- Organizer
  26th North American Molecular Beam Epitaxy Conference (NAMBE-26), P1.20
- Place of Presentation
  Princeton University, Princeton, NJ
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Doping control and the electrical characterization of Mg doped p-GaAsN alloys grown by MBE2009
- Author(s)
  梅野和行, 浦上法之, 光吉三郎, 米津宏雄, 岡田浩, 古川雄三, 若原昭浩
- Organizer
  28th Electronic Materials Symposium (EMS-28) A5, pp. 15-16
- Place of Presentation
  28th Electronic Materials Symposium (EMS-28) A5, pp. 15-16
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Effects of Mg doping on the luminescence characterization of GaAsN alloys grown by MBE2009
- Author(s)
  梅野和行, 古川雄三, 光吉三郎, 浦上法之, 岡田浩, 若原昭浩, 米津宏雄
- Organizer
  51st Electronic Materials Conference (EMC51), A2, Tech.Prog.P.13
- Place of Presentation
  University Park, Pennsylvania
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots for photonics applications on Si2009
- Author(s)
  K.Umeno, R.Noma, Y.Furukawa, S.Mitsuyoshi, H.Okada, A.Wakahara, H.Yonezu
- Organizer
  14th International Conference on Modulated Semiconductor Structures (MSS-14), Mo-mP52
- Place of Presentation
  Kobe International Conference Center, Kobe
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Electrical and Luminescence Properties of Mg Doped p-GaPN Grown by MBE2009
- Author(s)
  光吉三郎, 梅野和行, 古川雄三, 浦上法之, 岡田浩, 若原昭浩, 米津宏雄
- Organizer
  The 36th International Symposium on Compound Semiconductors (ISCS2009), 5.5
- Place of Presentation
  University of California, Santa Barbra
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Si基板上のInGaAsN/GaPN量子構造のバンドアライメントの解析2009
- Author(s)
  浦上法之, 梅野和行, 光吉三郎, 米津宏雄, 岡田浩, 古川雄三, 若原昭浩
- Organizer
  第70回応用物理学会学術講演会, 9p-C-2, p. 302
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] Annihilation mechanism of stacking faults on GaP layers grown on Si substrates within the critical thickness2009
- Author(s)
  Y.Keisuke, T.Kawai, Y.Furukawa, A.Wakahara, H.Okada, H.Yonezu
- Organizer
  51st Electronic Materials Conference (EMC51), S1, Tech.Prog.P.45
- Place of Presentation
  University Park, Pennsylvania
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] p-GaPNの発光機構と変調ドープGaAsN/GaPN高歪量子井戸への応用2009
- Author(s)
  光吉三郎・梅野和行・浦上法之・岡田浩・古川雄三・若原昭浩
- Organizer
  電子情報通信学会, 信学技報, vol. 109, no. 23, ED2009-30, pp. 65-70
- Place of Presentation
  豊橋技術科学大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] III-V on Si格子整合ヘテロエピタキシーとモノリシック光・電子融合システム2009
- Author(s)
  古川雄三, 若原昭浩, 米津宏雄
- Organizer
  第70回応用物理学会学術講演会, 9p-TE-2, p. 87
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] MBE growth of self-assembled InGaAsN/GaPN quantum dots for photonics applications on Si substrate2009
- Author(s)
  N.Urakami, K.Umeno, R.Noma, S.Mitsuyoshi, H.Yonezu, H.Okada, Y.Furukawa, A.Wakahara
- Organizer
  28th Electronic Materials Symposium (EMS-28) F10, pp. 167-168
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga
- Data Source
  KAKENHI-PROJECT-20360158
[Presentation] III-V Epitaxy on Si for Photonics Applications2008
- Author(s)
  H. Yonezu, Y. Furukawa, A. Wakahara (Invited)
- Organizer
  14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-14)
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-20360158

1. YONEZU Hiroo (90191668)

# of Collaborated Projects: 5 results

# of Collaborated Products: 28 results
2. WAKAHARA Akihiro (00230912)

# of Collaborated Projects: 2 results

# of Collaborated Products: 19 results
3. OHSHIMA Naoki (70252319)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results

FURUKAWA Yuzo 古川 雄三

Research Projects

Research Products

Co-Researchers

超並列光・電子集積回路の基本機能の実現Principal Investigator

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Device Process for Integrated Systems Composed of Dislocation-Free III-V-N Alloys and Silicon

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Research Institution

化合物半導体-シリコン無転位一体化層の高品質化と光デバイスへの応用

Principal Investigator

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格子整合系ヘテロエピタキシーによる無転位窒化物半導体層の形成Principal Investigator

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Massively Parallel Intelligent Preprocessing

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Fabrication of Functional Heteroepitaxial Layers Embedding Devices

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Implementation of Analog Integrated Circuits for Motion-Detection Network Based on Retina and Brain

Principal Investigator

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[Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy2010

Author(s)

Journal Title

Data Source

[Journal Article] Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy2010

Author(s)

Journal Title

Data Source

[Journal Article] Electrical and luminsence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy2010

Author(s)

Journal Title

Data Source

[Journal Article] Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy2010

Author(s)

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[Journal Article] Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE2010

Author(s)

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Data Source

[Journal Article] Growth of Pit-Free GaP on Si by Suppression of a Surface Reaction at an Initial Growth Stage2009

Author(s)

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[Journal Article] MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates2009

Author(s)

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[Journal Article] III-V Epitaxy on Si for Photonics Applications2008

Author(s)

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[Journal Article] Doping Control and Evaluation of pn-junction LED in GaPN Grown by OMVPE2008

Author(s)

FURUKAWA Yuzo 古川雄三