NIRAULA Madan ＮｉｒａｕｌａＭａｄａｎ

… Alternative Names

Niraula Madan ニラウラマダン

MADAN Niraula マダンニラウラ

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Researcher Number	20345945
Other IDs
External Links
Affiliation (Current)	2025: 名古屋工業大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2024: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2020 – 2022: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2015: 名古屋工業大学, 大学院工学研究科, 准教授 2012 – 2015: 名古屋工業大学, 工学(系)研究科(研究院), 准教授 2007 – 2012: 名古屋工業大学, 工学研究科, 准教授 … More 2009 – 2010: 名古屋工業大学, 大学院・工学研究科, 准教授 2005: Nagoya Institute of Technology, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 2004 – 2005: 名古屋工業大学, 工学研究科, 助教授 2003 – 2004: 名古屋工業大学, 工学研究科, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 80040:Quantum beam science-related / Basic Section 21060:Electron device and electronic equipment-related / Social systems engineering/Safety system / Applied physics, general Except Principal Investigator Medical systems / Medical systems
Keywords	Principal Investigator 放射線検出器 / 暗電流 / エピタキシャル成長層 / エネルギー識別 / ヘテロ接合ダイオード / 画像検出器 / metal contacts / interface engineering / gamma ray detector / perovskite crystal … More / X線、ガンマ線 / 安定性 / 検出器特性 / 放射線画像検出器 / CdTe 厚膜成長層 / 熱処理 / 転位密度低減 / CdTe厚膜成長層 / 転位密度 / CdTe / 医療診断 / 電極形成技術 / ヘテロ接合ダイオー / エピタキシャル成長 / アニール効果 / テルル化カドミウム / 安全・セキュリティ / CdTe バルク結晶 / エマシマレーザープロセシング / 表面漏れ電流 / 電極構造 / エネルギー分解能 / CdTeバルク結晶 … More Except Principal Investigator 放射線検出器 / CdTe / 電子デバイス / エピタキシャル成長 / テルル化カドミウム / Imaging detector / Metalorganic Vapor Phase Epitaxy / Cadmium Telluride / Radiation detector / CdZnTe / MOVPE / γ線検出器 / X線検出器 / 画像検出器 / 有機金属気相成長 / 医療診断 / 結晶成長 / 放射線・X線 / 診断システム / 検査 / 自己補償機構 / ヨウ素ドーピング / 厚膜層成長 / 検出器アレイ / 成長前処理 / 放射線画画像検出器 / エネルギー弁別機能 / 有機金属気相成長法 / ヘテロ接合ダイオード / カドミウムテルル Less

Development of highly efficient and stable photon-counting type X-ray detectors using single crystal metal halide perovskite semiconductorsPrincipal Investigator
- Principal Investigator
  
  Niraula Madan
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 80040:Quantum beam science-related
- Research Institution
  Nagoya Institute of Technology
Study on performance and reliability improvements of CdTe/Si X-ray imaging detectorsPrincipal Investigator
- Principal Investigator
  
  Niraula Madan
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya Institute of Technology
Development of high performance large size x-ray video camera using CdTe layers grown on Si substrates
- Principal Investigator
  
  Yasuda Kazuhito
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Medical systems
- Research Institution
  Nagoya Institute of Technology
Development of high performance large-area X-lay imaging detectors with energy discrimination capabilities
- Principal Investigator
  
  YASUDA Kazuhito
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Medical systems
- Research Institution
  Nagoya Institute of Technology
Investigating ways to improve the performance of semiconductor nuclear radiation detectorsPrincipal Investigator
- Principal Investigator
  
  NIRAULA Madan
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Social systems engineering/Safety system
- Research Institution
  Nagoya Institute of Technology
Development of large-area X-ray imaging detectors with energy discrimination capability for medical use.
- Principal Investigator
  
  YASUDA Kazuhito
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Medical systems
- Research Institution
  Nagoya Institute of Technology
テルル化カドミウムによる高エネルギー分解能放射線画像検出器の開発Principal Investigator
- Principal Investigator
  
  NIRAULA Madan (ニラウラマダン)
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied physics, general
- Research Institution
  Nagoya Institute of Technology
Development of Large Area and High Performance Radiation Imaging Detectors for Medical Use
- Principal Investigator
  
  YASUDA Kazuhito
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Medical systems
- Research Institution
  Nagoya Institute of Technology

[Journal Article] Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing2023
- Author(s)
  B. S. Chaudhari, M. Niraula, Y. Takagi, R. Okumura, K. P. Sharma, T. Maruyama
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 52 Issue: 5 Pages: 3431-3435
- DOI
  10.1007/s11664-023-10318-9
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04619
[Journal Article] Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors2021
- Author(s)
  Chaudhari B. S.、Goto H.、Niraula M.、Yasuda K.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 130 Issue: 5 Pages: 055302-055302
- DOI
  10.1063/5.0058504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04619
[Journal Article] Surface processing of CdTe detectors using hydrogen bromide-based etching solution2015
- Author(s)
  M.Niraula, K.Yasuda, N.Takai, M.Matsumoto, Y.Suzuki, Y.Tsukamoto, Y.Ito, S.Sugimoto, S.Kouno, D.Yamazaki, Y.Agata
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 16 Issue: 8 Pages: 856-858
- DOI
  10.1109/led.2015.2450835
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE2014
- Author(s)
  K.Yasuda, M.Niraula, Y.Wajima et al.
- Journal Title
  
  J. Electron. Materials
  
  Volume: 43 Issue: 8 Pages: 2860-2863
- DOI
  10.1007/s11664-014-3132-3
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates2014
- Author(s)
  M.Niraula, K.Yasuda, H.Yamashita et al.
- Journal Title
  
  IEEE Trans. Nucl. Sci.
  
  Volume: 61 Issue: 5 Pages: 2555-2558
- DOI
  10.1109/tns.2014.2347374
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development2014
- Author(s)
  M.Niraula, K.Yasuda, H.Yamashita et al.
- Journal Title
  
  Phys. Status Solid
  
  Volume: C11 Issue: 7-8 Pages: 1333-1336
- DOI
  10.1002/pssc.201300559
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers2013
- Author(s)
  M.Niraula, K.Yasuda, Y.Wajima
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 114 Issue: 16 Pages: 164510-164515
- DOI
  10.1063/1.4828479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy2013
- Author(s)
  K.Yasuda, M.Niraula, S.Namba, et al.
- Journal Title
  
  J. Electron. Mater.
  
  Volume: 42 Issue: 11 Pages: 3125-3128
- DOI
  10.1007/s11664-013-2680-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25242048
[Journal Article] Fabrication and characterization ofX-ray spectroscopic imaging array basedon thick single crystal CdTe epitaxiallayers2012
- Author(s)
  M.Niraula, K. Yasuda, S. Namba
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59(12) Issue: 12 Pages: 3450-3455
- DOI
  10.1109/ted.2012.2222413
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Fabrication of radiation imagingdetector arrays using MOVPE grownthick single crystal CdTe layers on Sisubstrates2012
- Author(s)
  K.Yasuda, M. Niraula, T. Tachi
- Journal Title
  
  Phys. Status. Solidi
  
  Volume: C9(8-9) Issue: 8-9 Pages: 1848-1851
- DOI
  10.1002/pssc.201100517
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development2012
- Author(s)
  M.Niraula, K.Yasuda,　et al.
- Journal Title
  
  Proc.IEEE 19th International Workshop on the Room Temperature Semiconductor Detectors
  
  Volume: N/A
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Dark-current characteristics ofradiation detector arrays developedusing MOVPE grown thick CdTe layers onSi substrates2012
- Author(s)
  K.Yasuda, M. Niraula, N. Fujimura
- Journal Title
  
  J. Electron. Mater.
  
  Volume: 41(10) Issue: 10 Pages: 2754-2758
- DOI
  10.1007/s11664-012-2121-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Development of Spectroscopic ImagingArrays Using Epitaxially Grown ThickSingle Crystal CdTe Layers on SiSubstrate2012
- Author(s)
  M.Niraula, K. Yasuda, N. Fujimura
- Journal Title
  
  IEEE Trans. Nucl. Sci
  
  Volume: 59(6) Issue: 6 Pages: 3201-3204
- DOI
  10.1109/tns.2012.2215628
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] 放射線エネルギーを識別可能な画像検出器の開発2012
- Author(s)
  安田和人、ニラウラマダン
- Journal Title
  
  光アライアンス
  
  Volume: 23(6) Pages: 33-36
- NAID
  40019331899
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy2012
- Author(s)
  K.Yasuda, M.Niraula,　et al.
- Journal Title
  
  Ext. Abstracts 2012 US Workshop on the Phys. Chem. II-VI Materials (2012, Seattle)
  
  Volume: N/A Pages: 131-134
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epiLaxy2011
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Journal Title
  
  SPIE Proceedings vol.7995
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate2011
- Author(s)
  M.Niraula, K.Yasuda, et al
- Journal Title
  
  18th International Workshop on the Room Temperature Semiconductor Detectors(RTSD) (2011, Valencia, Spain)
  
  Volume: (CD-ROM)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2011
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Journal Title
  
  SPIE Proceedings
  
  Volume: 7995
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] MOVPE法によるSi基板上のCdTe厚膜層を用いた放射線検出アレイの開発2011
- Author(s)
  舘忠裕、安田和人、ニラウラマダン
- Journal Title
  
  電子情報通信学会技報
  
  Volume: ED2011-26 Pages: 131-134
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Dark-current characteristics of radiation｀detector arrays developed using MOVPE grown thick CdTe layers on Si substartes2011
- Author(s)
  K.Yasuda, M.Niraula, et al
- Journal Title
  
  Ext.Abstracts, 2011 US Workshop on the Phys.Chem.II-VI Materials (2011, Chicago)
  
  Pages: 163-166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Development of radiation imagingdevices with energy discriminationcapability using thick CdTe layersgrown on Si substrates by metal organicvapor phase epitaxy2011
- Author(s)
  K.Yasuda, M. Niraula, Y. Agata
- Journal Title
  
  Proc. SPIE
  
  Volume: 7995 Pages: 79952T-79952T
- DOI
  10.1117/12.888229
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2010
- Author(s)
  安田和人、ニラウラマダン, 他7名
- Journal Title
  
  放射線 vol.36, no.2
  
  Pages: 41-48
- NAID
  10026604059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究2010
- Author(s)
  後藤達彦、安田和人、ニラウラマダン
- Journal Title
  
  電子情報通信学会技報
  
  Volume: ED2010-29 Pages: 65-68
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, 他
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 39 Pages: 1118-1123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究-Si基板上の厚膜CdTe層高岨質化の検討2010
- Author(s)
  後藤達彦、ニラウラマダン、安田和人, 他8名
- Journal Title
  
  電気情報通信学会信学技報 ED2010-29,CPM2010-19, SDM2010-29
  
  Pages: 65-68
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy2010
- Author(s)
  K. Yasuda, M. Niraula, 他7名, 1番目
- Journal Title
  
  J. Electron. Mater. 39(in-press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2010
- Author(s)
  安田和人、ニラウラマダン、岡寛樹
- Journal Title
  
  放射線
  
  Pages: 41-48
- NAID
  10026604059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] Electricalproperties of halogen-dopedCdTe layers on Si substrates grown bymetalorganic vapor phase epitaxy2010
- Author(s)
  K.Yasuda, M. Niraula, H. Oka
- Journal Title
  
  J.Electron. Mater
  
  Volume: 39(7) Issue: 7 Pages: 1118-1123
- DOI
  10.1007/s11664-010-1241-1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22240062
[Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2010
- Author(s)
  安田和人、ニラウラマダン, 他
- Journal Title
  
  放射線
  
  Volume: 36 Pages: 41-48
- NAID
  10026604059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Mctalorganic Vapor-Phase Epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, 他7名
- Journal Title
  
  J.Electron.Materials vol.39, no.7
  
  Pages: 1118-1123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2009
- Author(s)
  M.Niraula, K.Yasuda, et al.
- Journal Title
  
  IEEE Trans.Nuclear Science 56(3)
  
  Pages: 836-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxally Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M.Niraula, K.Yasuda, et al.
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. 1164
  
  Pages: 35-44
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2009
- Author(s)
  M. Niraula, K. Yasuda, 他11名, 2番目
- Journal Title
  
  IEEE Trans. Nuclear Science 56(3)
  
  Pages: 836-540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2009
- Author(s)
  M.Niraula, K.Yasuda, et al.
- Journal Title
  
  IEEE Trans, Nuclear Science 56(4)
  
  Pages: 1731-1735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2009
- Author(s)
  M.Niraula, 他
- Journal Title
  
  IEEE Transactions on Nuclear Science 56
  
  Pages: 1731-1735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxially Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M.Niraula, K.Yasuda, 他11名
- Journal Title
  
  Mater.Res.Soc.Symp.Proc. vol.1164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2009
- Author(s)
  M.Niraula, K.Yasuda, 他11名
- Journal Title
  
  IEEE Trans.Nucl.Sci. Vol.56, no.4
  
  Pages: 1731-1735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2009
- Author(s)
  M.Niraula, K.Yasuda, 他11名
- Journal Title
  
  IFEE Trans.Nucl.Sci. vol.56, no.3
  
  Pages: 836-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2009
- Author(s)
  M. Niraula, K. Yasuda, 他11名, 2番目
- Journal Title
  
  IEEE Trans. Nuclear Science 56(4)
  
  Pages: 1731-1735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxally Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M. Niraula, K. Yasuda, 他11名, 2番目
- Journal Title
  
  Mat. Res. Soc. Symp. Proc. 1164
  
  Pages: 35-44
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2009
- Author(s)
  M.Niraula, 他
- Journal Title
  
  IEEE Transactions on Nuclear Science 56
  
  Pages: 836-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxially Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M.Niraula, 他
- Journal Title
  
  Material Research Society Symposium Proceeding 1164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2008
- Author(s)
  M.Niraula, K.Yasuda, 他11名
- Journal Title
  
  IEEE2008 Intl.Workshop on Room-Temp.Semicond.X-, Gamma- Ray Detectors
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2008
- Author(s)
  M. Niraula
- Journal Title
  
  IEEE 16th Intern. Workshop on RoomTemperature Semiconductor X-and gamma-Ray Detectors (RTSD) (2008, Dresden) Conference Record
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2008
- Author(s)
  M. Niraula
- Journal Title
  
  IEEE 2008-16^<th> Intern Workshop on Room-Temp Semiconductor x-and Gamma-Ray Detectors
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310095
[Journal Article] Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches2007
- Author(s)
  K. Yasuda, M. Niraula, 他7名, 1番目
- Journal Title
  
  J. Electron. Mater. 36(8)
  
  Pages: 837-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Characterization of CdTe/n+-Si Heterojunction Diodes for Nuclear Radiation Imaging Detectors2007
- Author(s)
  M. Niraula, K. Yasuda, 他9名, 2番目
- Journal Title
  
  IEEE Trans. Nuclear Science 54(4)
  
  Pages: 817-820
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19200044
[Journal Article] Development of Large Area Radiation Imaging Detectors Using Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2006
- Author(s)
  K.Yasuda, M.Niraula et al.
- Journal Title
  
  Ionizing Radiation (invited)(in Japanese) 32(1)
  
  Pages: 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] 有機金属気相成長法によるCdTe厚膜を用いた大面積放射線画像検出器の研究2006
- Author(s)
  安田和人, ニラウラマダン他5名
- Journal Title
  
  放射線 32(1)
  
  Pages: 3-9
- NAID
  10017263893
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging2006
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  J.Electron.Materials (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging2006
- Author(s)
  M.Niraula, K.Yasuda 他5名
- Journal Title
  
  J. Electron. Materials (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging2005
- Author(s)
  M.Niraula, K.Yasuda 他5名
- Journal Title
  
  Ext. Abstract 2005 US Workshop on the Phys. Chem. II-VI Materials (2005, Boston),
  
  Pages: 73-76
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2005
- Author(s)
  K.Yasuda, M.Niraula他6名
- Journal Title
  
  IEEE Trans.Nuclear Science 52(5)
  
  Pages: 1951-1955
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Control of Zn Composition (0<x<1) in Cdl-xZnxTe Epitaxial Layers on GaAs Substrates Grown by MOVPE2005
- Author(s)
  K.Yasuda, N.Niraula 他5名
- Journal Title
  
  Applied Surface Science (in press)
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  IEEE Trans.Nuclear Science 52(5)
  
  Pages: 1951-1955
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Resolution Capability Based on CdTe/n^<+->GaAs Heterojunction Diodes2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  IEEE Electron Device Lett 26(1)
  
  Pages: 8-10
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging2005
- Author(s)
  M.Niraula, K.Yasuda他5名
- Journal Title
  
  Ext.Abstract 2005 US Workshop on the Phys.Chem.II-VI Materials (2005, Boston), J.Electron.Mater. (in-press)
  
  Pages: 73-76
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2005
- Author(s)
  K.Yasuda, M.Niraula 他6名
- Journal Title
  
  IEEE Trans. Nuclear Science 52(5)
  
  Pages: 1951-1955
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2005
- Author(s)
  K.Yasuda, M.Niraula 他6名
- Journal Title
  
  IEEE Trans.Nuclear Science (in press)
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Control of Zn Composition (0<x<1) in Cd1-xZnxTe Epitaxial Layers on GaAs Substrates Grown by MOVPE2005
- Author(s)
  K.Yasuda, N.Niraula他5名
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 347-350
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxally Grown Thick CdTe Layers on n+^-GaAs Substrates2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  J.Electron.Materials 34(6)
  
  Pages: 815-819
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Control of Zn Composition (0<x<1) in Cd1^-xZnxTe Epitaxial Layers on GaAs Substrates Grown by MOVPE2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 347-350
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Resolution Capability Based on CdTe/n^+-GaAs Heterojunction Diodes2005
- Author(s)
  M.Niraula, K.Yasuda 他5名
- Journal Title
  
  IEEE Electron Device Lett 26(1)
  
  Pages: 8-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Control of Zn Composition (0<x<1) in Cd1-xZnxTe Epitaxial Layers on GaAs Substrates Grown by MOVPE2005
- Author(s)
  K.Yasuda, M.Niraula 他5名
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 347-350
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxally Grown Thick CdTe Layers on n+-GaAs Substrates2005
- Author(s)
  M.Niraula, K.Yasuda他6名
- Journal Title
  
  J.Electron.Materials 34(6)
  
  Pages: 815-819
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor-phase Epitaxy2005
- Author(s)
  M.Niraula, K.Yasuda他5名
- Journal Title
  
  J.Crystal Growth 284
  
  Pages: 15-19
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxally Grown Thick CdTe Layers on n+-GaAs Substrates2005
- Author(s)
  M.Niraula, K.Yasuda 他6名
- Journal Title
  
  J Electron. Materials 34(6)
  
  Pages: 815-819
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  Ext.Abstract 2005 US Workshop on the Phys.Chem.II-VI Materials, (2005, Boston)
  
  Pages: 73-76
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor-Phase Epitaxy2005
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  J.Crystal Growth 284
  
  Pages: 15-19
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Direct Growth of High-quality CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor-phase Epitaxy2005
- Author(s)
  M.Niraula, K.Yasuda 他5名
- Journal Title
  
  J. Crystal Growth 284
  
  Pages: 15-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] MOVPE growth of Thick CdTe Heteroepitaxial Layers for X-ray Imaging Detectors2004
- Author(s)
  M.Niraula, K.Yasuda 他4名
- Journal Title
  
  Phys. Stat. Sol. (C) 1(4)
  
  Pages: 1075-1078
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n^+-GaAs Substrates2004
- Author(s)
  M.Niraula, K.Yasuda 他6名
- Journal Title
  
  Extend.Abst.2004 US Workshop on Phys.Chem.II-VI Materials (2004, Chicago)
  
  Pages: 99-102
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors with Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2004
- Author(s)
  K.Yasuda, M.Niraula 他6名
- Journal Title
  
  IEEE 2004 14^<th> Intern. Workshop on R-T. Semicon. X- and Gamma Ray Detectors (RTSD) Conference Record (Invited)
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxy Grown Thick CdTe Layers on n^<+->GaAs Substrades2004
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  Extend.Abst.2004 US Workshop on Phys.Chem.II-VI Materials, (2004, Chicago)
  
  Pages: 99-102
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n^+-GaAs Heterojunction Diodes for an X-Ray Imaging Detector2004
- Author(s)
  M.Niraula, K.Yasuda 他5名
- Journal Title
  
  J. Electronic Materials 33(6)
  
  Pages: 645-650
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] MOVPE growth of Thick CdTe Heteroepitaxial Layers for X-ray Imaging Detectors2004
- Author(s)
  M.Niraula, K.Yasuda 他4名
- Journal Title
  
  Phys.Stat.Sol.C 1(4)
  
  Pages: 1075-1078
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Study of Multi-Electrodes Structure in CdTe Nuclear Radiation Detectors2004
- Author(s)
  M.Niraula, Y.Agata, K.Yasuda
- Journal Title
  
  IEEE 2004- 14^<th> International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors Conference Record
- Data Source
  KAKENHI-PROJECT-15760038
[Journal Article] MOVPE growth of Thick CdTe Heteroepitaxial Layers for X-ray Imaging Detectors2004
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  Phys.Stat.Sol.(C) 1(4)
  
  Pages: 1075-1078
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n^<+->GaAs Heterojunction Diodes for an X-Ray Imaging Detector2004
- Author(s)
  M.Niraula, K.Yasuda et al.
- Journal Title
  
  J.Electronic Materials 33(6)
  
  Pages: 645-650
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n^+-GaAs Substrates2004
- Author(s)
  M.Niraula, K.Yasuda 他6名
- Journal Title
  
  Extend. Abst. 2004 US Workshop on Phys. Chem. II-VI Materials (2004, Chicago)
  
  Pages: 99-102
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Journal Article] Development of Nuclear Radiation Detectors Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy2004
- Author(s)
  K.Yasuda, M.Niraula et al.
- Journal Title
  
  IEEE 2004 14^<th> Intern. Workshop on R-T.Semicon.X- and Gamma Ray Detectors (RTSD), Conference Record (Invited) R1-3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Patent] 放射線検出器の製造方法2011
- Inventor(s)
  安田和人,ニラウラマダン
- Industrial Property Rights Holder
  名古屋工業大学
- Industrial Property Number
  2011-109374
- Filing Date
  2011-05-16
- Data Source
  KAKENHI-PROJECT-22240062
[Patent] 放射線検出器の製造方法2011
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  名古屋工業大学
- Industrial Property Number
  2011-109374
- Filing Date
  2011-05-16
- Data Source
  KAKENHI-PROJECT-22240062
[Patent] Method for manufacturing asemiconductor radiation detector2011
- Inventor(s)
  安田和人,ニラウラマダン
- Industrial Property Rights Holder
  中部TLO
- Acquisition Date
  2011-07-06
- Overseas
- Data Source
  KAKENHI-PROJECT-22240062
[Patent] 半導体放射線検出器の製造方法2008
- Inventor(s)
  安田和人, M. ニラウラ
- Industrial Property Rights Holder
  中部TLO
- Acquisition Date
  2008-04-11
- Data Source
  KAKENHI-PROJECT-19200044
[Patent] PCT出願「半導体放射線検出器」2004
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  (財)名古屋産業科学研究所
- Industrial Property Number
  2003-397978
- Filing Date
  2004-11-24
- Data Source
  KAKENHI-PROJECT-15300181
[Patent] PCT出願半導体放射線検出器2004
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  (財)名古屋産業科学研究所
- Industrial Property Number
  2003-397978
- Filing Date
  2004-11-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Patent] 半導体放射線検出器及びその製造方法(Semiconductor Radiation Detector and Process for Producing the Same)2004
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  中部TLO
- Filing Date
  2004-11-24
- Data Source
  KAKENHI-PROJECT-19200044
[Patent] 半導体放射線検出器2003
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  中部TLO
- Filing Date
  2003-11-27
- Data Source
  KAKENHI-PROJECT-19200044
[Patent] 半導体放射線検出器の製造方法2003
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  中部TLO
- Filing Date
  2003-11-27
- Data Source
  KAKENHI-PROJECT-19200044
[Patent] 半導体放射線検出器1998
- Inventor(s)
  安田和人, ニラウラマダン
- Industrial Property Rights Holder
  (財)名古屋産業科学研究所
- Industrial Property Number
  2003-397978
- Filing Date
  1998-11-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15300181
[Presentation] Investigation on threading dislocation reduction in CdTe/Si epitaxial layer using post-growth patterning and annealing technique2022
- Author(s)
  Bal Singh Chaudhari, Yutaka Takagi, Ryo Okumura, Madan Niraula
- Organizer
  2022年　第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04619
[Presentation] Low Temperature Annealing of CdTe Detectors with Evaporated Gold Contacts and its effect on Detector Performance2021
- Author(s)
  M. Niraula, K. Yasuda, Y. Takagi, and S. Fuji
- Organizer
  IEEE-2021 The 28th International Symposium on Room-Temperature Semiconductor Detectors (RTSD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04619
[Presentation] MOVPE法によるn+-(211)Si上のCdTe成長層の成長室内アニール処理検討2021
- Author(s)
  松原敏樹, 小林竜大, 後藤颯汰, 藤井成弥, 中島幸寛, 平野颯涼, ニラウラマダン, 安田和人
- Organizer
  2021年　第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04619
[Presentation] Evaluation of dislocation densities and their distribution in epitaxial (211)CdTe/Si2021
- Author(s)
  Bal Singh Chaudhari, Hayata Goto, Madan Niraula, Kazuhito Yasuda
- Organizer
  2021年　第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04619
[Presentation] Epitaxial CdTe on Si Heterojunction Diode-Type Detector Performance and Analysis2020
- Author(s)
  M. Niraula, K. Yasuda, B. S. Chaudhari, H. Goto, T. Kobayashi, S. Fujii,
- Organizer
  IEEE-2020 The 27th International Symposium on Room-Temperature Semiconductor Detectors (RTSD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04619
[Presentation] MOVPE法による(211)Si基板上のAsドープCdTe層のフォトルミネッセンス特性2016
- Author(s)
  小島將弘、伊藤祐葵、神野悟史、杉本宗一郎、山崎大輔、北川翔三、坪田眞太郎、安田和人、ニラウラマダン､安形保則
- Organizer
  2016第63回応用物理学会春期学術講演会
- Place of Presentation
  東工大(東京）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] MOVPE法による(211)CdTe／Si成長層のエッチピット評価2016
- Author(s)
  坪田眞太郎、杉本宗一郎、伊藤祐葵、山崎大輔、神野悟史、小島將弘、北川翔三、、安田和人、ニラウラマダン､安形保則
- Organizer
  2016第63回応用物理学会春期学術講演会
- Place of Presentation
  東工大(東京）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] MOVPE法による(211)及び(100)Si基板上のCdTe成長層のフォトルミネッセンス特性2016
- Author(s)
  北川翔三、神野悟史、伊藤祐葵、杉本宗一郎、山崎大輔、小島將弘、坪田眞太郎、､安形保則、ニラウラマダン、安田和人
- Organizer
  2016第63回応用物理学会春期学術講演会
- Place of Presentation
  東工大(東京）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] Study of CdTe surface processed with hydrogen bromide based etching solution2015
- Author(s)
  M.Niraula, K.Yasuda, Y,Ito, D.Yamazaki, S.Sugimoto, S.Kouno, S.Kitagawa, K.Kojima, Y.Agata
- Organizer
  IEEE 2015 22nd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors
- Place of Presentation
  San Diego (USA)
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] Chracterization of large-area spectroscopic imaging array fabricated using epitaxially grown thick single crystal CdTe layers on Si substrates2015
- Author(s)
  M.Niraula, K.Yasuda, S.Kouno, S.Sugimoto, Y,Ito, D.Yamazaki, K.Kojima, S.Kitagawa, Y.Agata
- Organizer
  IEEE 2015 22nd International Workshop on Room-Temperature
- Place of Presentation
  San Diego (USA)
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE2013
- Author(s)
  K.Yasuda, M.Niraula, Y.Wajima, et al.
- Organizer
  2013 US Workshop on the Phys. Chem. II-VI Materials
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII)2013
- Author(s)
  山下隼、ニラウラマダン、安田和人
- Organizer
  2013春期第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Development oflarge‐area imaging arrays using epitaxTally grown thick single crystalCdTe layers on Si substrates2013
- Author(s)
  Madan Nirau1,安田和人
- Organizer
  2013春期第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-30
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII)-CdTe/Si成長層のアニール処理の検討一2013
- Author(s)
  和嶋悠人、ニラウラマダン、安田和人
- Organizer
  2013春期第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development2013
- Author(s)
  M.Niraula, K.Yasuda, H.Yamashita, et al.
- Organizer
  The 16th International Conference on II-VI Compounds and Related Materials
- Place of Presentation
  Nagahama, Japan
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates2013
- Author(s)
  M.Niraula, 安田和人, 他
- Organizer
  2013春期第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates2013
- Author(s)
  M.Niraula, K.Yasuda, H.Yamashita, et al.
- Organizer
  IEEE 2013 20th International Workshop on Room-Temperature
- Place of Presentation
  Seoul, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(1)2012
- Author(s)
  近藤嵩輝、ニラウラマダン、安田和人
- Organizer
  2012春期第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Post -growth annealing of CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2012
- Author(s)
  K. Yasuda, M. Niraula, S. Namba
- Organizer
  2012 US Workshop on the Phys. Chem. II-VI Materials
- Place of Presentation
  Seattle
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development2012
- Author(s)
  M.Niraula, K.Yasuda,　et al.
- Organizer
  IEEE 19th International Workshop on the Room Temperature Semiconductor Detectors(RTSD)
- Place of Presentation
  Anaheim, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)～検出器アレイの暗電流特性(II)～2012
- Author(s)
  館忠裕、ニラウラマダン、安田和人
- Organizer
  2012春期第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)～検出器アレイの暗電流特性(1)～2012
- Author(s)
  難波秀平、ニラウラマダン、安田和人
- Organizer
  2012春期第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development2012
- Author(s)
  M. Niraula, K. Yasuda, S. Namba
- Organizer
  19th International Workshop on the Room Temperature Semiconductor Detectors (RTSD)
- Place of Presentation
  Anaheim CA
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] CdZnTe層成長と特性評価2012
- Author(s)
  和嶋悠人、ニラウラマダン、安田和人
- Organizer
  2012秋期第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Post growth annealing of CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2012
- Author(s)
  K.Yasuda, M.Niraula, et al.
- Organizer
  2012 US Workshop on the Phys. Chem. II-VI Materials
- Place of Presentation
  Seattle, USA
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(H)2012
- Author(s)
  村松慎也、ニラウラマダン、安田和人
- Organizer
  2012春期第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate2011
- Author(s)
  M. Niraula, K. Yasuda, N. Fu j imura
- Organizer
  18th International Workshop on the Room Temperature Semiconductor Detectors(RTSD)
- Place of Presentation
  Valencia, Spain
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X)2011
- Author(s)
  館忠裕、ニラウラマダン、安田和人
- Organizer
  2011春期応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate2011
- Author(s)
  M.Niraula, K.Yasuda, et al
- Organizer
  IEEE 18th International Workshop on the Room Temperature Semiconductor Detectors
- Place of Presentation
  Valencia, Spain(Invited)
- Year and Date
  2011-10-25
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(IX)2011
- Author(s)
  藤村直也、ニラウラマダン、安田和人
- Organizer
  2011春期応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Dark-current characteristics of radiation detector arrays developed using MOVPE grown thick CdTe layers on Si substartes2011
- Author(s)
  K.Yasuda, M.Niraula, et al
- Organizer
  2011 us Workshop on the Phys.Chem.II-VI Materials
- Place of Presentation
  Chicago, USA
- Year and Date
  2011-10-04
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Fabrication of radiation imaging detector arrays using MOVPE grown thick single crystal CdTe layers on Si substrates2011
- Author(s)
  K.Yasuda, M.Niraula, et al
- Organizer
  15-th International Conference on II-VI Compounds
- Place of Presentation
  Mayan Riviera, Mexico
- Year and Date
  2011-08-23
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Dark-current characteristics of radiation detector arrays developed using MOVPE grown thick CdTe layers on Si substartes2011
- Author(s)
  K. Yasuda, M. Niraula
- Organizer
  2011 US Workshop on the Phys. Chem. II-VI Materials
- Place of Presentation
  Chicago
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Organizer
  7＾<th> International Conference on Thin Film Physics and Applications
- Place of Presentation
  Tongi University Shanghai, China(招待講演)
- Year and Date
  2010-09-26
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Hetero-epitaxial Growth and Doping Properties of CdTe Layers by Metalorganic Vapor Phase Epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Organizer
  The 2010 International Symposium on Optoelectronic Materials and Devices
- Place of Presentation
  Chicago, USA.(招待講演)
- Year and Date
  2010-07-12
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Hetero-epitaxial Growth and Doping Properties of CdTe Layers by Metalorganic Vapor Phase Epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Organizer
  The 2010 International Symposium on Optoelectronic Materials and Devices
- Place of Presentation
  Chicago, USA(招待講演)
- Year and Date
  2010-07-12
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy2010
- Author(s)
  K.Yasuda, M.Niraula, Y.Agata
- Organizer
  7^<th> International Conference on Thin Film Physics and Applications
- Place of Presentation
  Tongi University, Shanghai, China.(招待講演)
- Year and Date
  2010-09-26
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxally Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M. Niraula, K. Yasuda, 他11名
- Organizer
  2009 MRS Spring Meeting
- Place of Presentation
  San Francisco(Invited)
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2009
- Author(s)
  安田和人, ニラウラマダン, 他
- Organizer
  第70回応用物理学会学術講演会、(シンポジウム)
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] CdTe厚膜のMOVPE成長と放射線検出器への応用特性2009
- Author(s)
  安田和人, ニラウラマダン, 他7名
- Organizer
  第70回応物物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxally Grown Single Crystal Thick CdTe Films2009
- Author(s)
  ニラウラマダン, 安田和人, et al.
- Organizer
  Mat.Res.Soc.Symp.(Invited)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxially Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M.Niraula, 他
- Organizer
  Spring Meeting Mat. Research Society Symposium
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy2009
- Author(s)
  K.Yasuda, M.Niraula, 他
- Organizer
  The 2009 US Workshop on the Physics and Chemistry of II-VI Materials
- Place of Presentation
  Chicago, USA.
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy2009
- Author(s)
  安田和人, ニラウラマダン, et al
- Organizer
  US Workshop on the Phys. & Chem.of II-VI Materials
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2009
- Author(s)
  M. Niraula
- Organizer
  2008 Symposium on Radiation Measurements and Applications (SORMA WEST 2008)
- Place of Presentation
  Berkeley, UA
- Year and Date
  2009-06-02
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy2009
- Author(s)
  K. Yasuda, M. Niraula, 他6名
- Organizer
  2009 US Workshop on the Phys. Chem. II-VI Materials
- Place of Presentation
  Chicago
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] Development of X-ray, Gamma Ray Spectroscopic Detector Using Fpitaxially Grown Single Crystal Thick CdTe Films2009
- Author(s)
  M.Niraula, 他
- Organizer
  Mater.Res.Soc.Symp.(Spring Meeting)
- Place of Presentation
  San Francisco, USA.(招待講演)
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2008
- Author(s)
  M. Niraula, K. Yasuda, 他11名
- Organizer
  2008 Symposium on Radfiation Measurement and Applications (SORMA WEST 2008)
- Place of Presentation
  Barkeley
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2008
- Author(s)
  M.Niraula, 他
- Organizer
  IEEE 2008-16^<th> Intern Workshop on Room-Temp Semiconductor X-and Gamma-Ray Detectors
- Place of Presentation
  Dresden, Germany.(招待講演)
- Year and Date
  2008-10-22
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE2008
- Author(s)
  M. Niraula, K. Yasuda, 他11名
- Organizer
  IEEE 2008 16th Intern. Workshop on Room-Temperature Semiconductor X- and gamma-Ray Detectors (RTSD)
- Place of Presentation
  Dresden(Invited)
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication2008
- Author(s)
  M.Niraula, 他
- Organizer
  2008 Symposium on Radiation Measurements and Applications (SORMA WEST 2008)
- Place of Presentation
  Berkeley, USA.
- Year and Date
  2008-06-02
- Data Source
  KAKENHI-PROJECT-20310095
[Presentation] Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors2007
- Author(s)
  M.Niraula
- Organizer
  2007 US Workshop on the Phys.Chem.II-VI Materials
- Place of Presentation
  Baltimore, U.S.A.
- Year and Date
  2007-10-30
- Data Source
  KAKENHI-PROJECT-19200044
[Presentation] HBr系エッチング液によるCdTe検出器の表面処理の検討
- Author(s)
  神野悟史、ニラウラマダン、安田和人他
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25242048
[Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metal organic vapor phase epitaxy
- Author(s)
  K. Yasuda, M. Niraula, Y. Agata
- Organizer
  7th International Conference on Thin Film Physics and Application
- Place of Presentation
  Tongji Univ., Shanghai, China
- Data Source
  KAKENHI-PROJECT-22240062
[Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究
- Author(s)
  松本雅彦，ニラウラマダン、安田和人他
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25242048

1. YASUDA Kazuhito (60182333)

# of Collaborated Projects: 5 results

# of Collaborated Products: 117 results
2. 富田康弘 (50394169)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SUZUKI Kazuhiko (30226500)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

NIRAULA Madan Ｎｉｒａｕｌａ Ｍａｄａｎ

Niraula Madan ニラウラ マダン

MADAN Niraula マダン ニラウラ

Research Projects

Research Products

Co-Researchers

Development of highly efficient and stable photon-counting type X-ray detectors using single crystal metal halide perovskite semiconductorsPrincipal Investigator

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Study on performance and reliability improvements of CdTe/Si X-ray imaging detectorsPrincipal Investigator

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Development of high performance large size x-ray video camera using CdTe layers grown on Si substrates

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Development of high performance large-area X-lay imaging detectors with energy discrimination capabilities

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Investigating ways to improve the performance of semiconductor nuclear radiation detectorsPrincipal Investigator

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Development of large-area X-ray imaging detectors with energy discrimination capability for medical use.

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テルル化カドミウムによる高エネルギー分解能放射線画像検出器の開発Principal Investigator

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Development of Large Area and High Performance Radiation Imaging Detectors for Medical Use

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[Journal Article] Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing2023

Author(s)

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DOI

Data Source

[Journal Article] Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors2021

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[Journal Article] Surface processing of CdTe detectors using hydrogen bromide-based etching solution2015

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[Journal Article] Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE2014

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[Journal Article] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates2014

Author(s)

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DOI

Data Source

[Journal Article] Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development2014

NIRAULA Madan ＮｉｒａｕｌａＭａｄａｎ

Niraula Madan ニラウラマダン

MADAN Niraula マダンニラウラ