Ohi Akihiko 大井暁彦

… Alternative Names

大井暁彦オオイアキヒコ

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Researcher Number	20370364
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 主任エンジニア
Affiliation (based on the past Project Information) *help	2020 – 2023: 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 主任エンジニア
Review Section/Research Field	Except Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Except Principal Investigator Al2O3 / ZrO2 / 電気特性 / 積層膜 / 複合酸化物 / キャパシタ / 巨大誘電率 / 酸素欠損 / ナノラミネート複合機能膜 / 誘電率 … More / MIMキャパシタ / (HfO2)/(ZrO2)膜 / ナノラミネート膜 / GaNパワーデバイス / HfZrOx膜 / HfAlOx膜 / 高誘電率 / 機能性複合酸化物膜 / ナノラミネート構造 / 原子層堆積法 Less

Nanolaminate multifunctional film with the atomic-level oxygen vacancy control and its mechanism of giant dielectric constant
- Principal Investigator
  
  NABATAME TOSHIHIDE
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science

All 2021 2020

All Journal Article Presentation

[Journal Article] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing2021
- Author(s)
  Hirose Masafumi、Nabatame Toshihide、Irokawa Yoshihiro、Maeda Erika、Ohi Akihiko、Ikeda Naoki、Sang Liwen、Koide Yasuo、Kiyono Hajime
- Journal Title
  
  Journal of Vacuum Science &Technology A
  
  Volume: 39 Issue: 1 Pages: 012401-012401
- DOI
  10.1116/6.0000626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189
[Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress2021
- Author(s)
  Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SC Pages: SCCM01-SCCM01
- DOI
  10.35848/1347-4065/abe685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O32021
- Author(s)
  Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 3 Pages: 030903-030903
- DOI
  10.35848/1347-4065/abde54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition2021
- Author(s)
  Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Irokawa Yoshihiro、Ohi Akihiko、Ikeda Naoki、Onaya Takashi、Shiozaki Koji、Ochi Ryota、Hashizume Tamotsu、Koide Yasuo
- Journal Title
  
  Journal of Vacuum Science &Technology A
  
  Volume: 39 Issue: 6 Pages: 062405-062405
- DOI
  10.1116/6.0001334
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021
- Author(s)
  Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 121-128
- DOI
  10.1149/10404.0121ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Presentation] Control of ferroelectric phase formation in HfxZr1－xO2 thin films using nano-ZrO2 nucleation layer technique2021
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
- Organizer
  MANA International Symposium 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1-xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor2021
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Naomi, Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
- Organizer
  AVS 21st International Conference on Atomic Layer Deposition (ALD 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas2021
- Author(s)
  Toshihide Nabatame, Mari Inoue, Erika Maeda, Takashi Onaya, Masashi Hirose, Riku Kobayashi, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi
- Organizer
  21st International Conference on Atomic Layer Deposition. 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] mportance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021
- Author(s)
  Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
- Organizer
  240th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性2020
- Author(s)
  小林陸, 生田目俊秀, 女屋崇, 大井暁彦, 池田直樹, 長田貴弘, 塚越一仁, 小椋厚志
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] GaNパワーデバイス用HfAlOx、HfSiOx、AlSiOx、Al2O3及びHfO2 絶縁膜の特性比較2020
- Author(s)
  前田瑛里香, 生田目俊秀, 廣瀨雅史, 井上万里, 大井暁彦, 池田直樹, 塩崎宏司, 橋詰保, 清野肇
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Characteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperature2020
- Author(s)
  Toshihide Nabatame, Tomoji Oishi, Mari Inoue, Makoto Takahashi, Kazuhiro Ito, Naoki Ikeda, Akihiko Ohi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] nfluence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel2020
- Author(s)
  Riku Kobayashi, Toshihide Nabatame, Takahsi Onaya, Akihiko Ohi,Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsusi Ogura
- Organizer
  33rd International Microprocesses and Nanotechnology Conference 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189

1. NABATAME TOSHIHIDE (10551343)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. 池田直樹 (10415771)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
3. 塚越一仁 (50322665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results

Ohi Akihiko 大井 暁彦

大井 暁彦 オオイ アキヒコ

Research Projects

Research Products

Co-Researchers

Nanolaminate multifunctional film with the atomic-level oxygen vacancy control and its mechanism of giant dielectric constant

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O32021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021

Author(s)

Journal Title

DOI

Data Source

[Presentation] Control of ferroelectric phase formation in HfxZr1－xO2 thin films using nano-ZrO2 nucleation layer technique2021

Author(s)

Organizer

Data Source

[Presentation] Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1-xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor2021

Author(s)

Organizer

Data Source

[Presentation] Study of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas2021

Author(s)

Organizer

Data Source

[Presentation] mportance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021

Author(s)

Organizer

Data Source

[Presentation] Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性2020

Author(s)

Organizer

Data Source

[Presentation] GaNパワーデバイス用HfAlOx、HfSiOx、AlSiOx、Al2O3及びHfO2 絶縁膜の特性比較2020

Author(s)

Organizer

Data Source

[Presentation] Characteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperature2020

Author(s)

Organizer

Data Source

[Presentation] nfluence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel2020

Author(s)

Organizer

Data Source

Ohi Akihiko 大井暁彦

大井暁彦オオイアキヒコ