Nagashio Kosuke 長汐晃輔

… Alternative Names

NAGASHIO Kosuke 長汐晃輔

Less

Researcher Number	20373441
Other IDs	https://orcid.org/0000-0003-1181-8644
External Links
Affiliation (Current)	2024: 東京大学, 大学院工学系研究科(工学部), 教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 東京大学, 大学院工学系研究科(工学部), 教授 2015 – 2019: 東京大学, 大学院工学系研究科(工学部), 准教授 2017: 東京大学, 大学院工学研究科, 教授 2012 – 2015: 東京大学, 工学(系)研究科(研究院), 准教授 2012: 東京大学, 大学院・工学系研究科, 准教授 … More 2007 – 2010: The University of Tokyo, 大学院・工学系研究科, 講師 2009: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部, 助手 2006: Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Assistant 2005: Institute of Space and Astronautical Science, Department of Space Biology and Microgravity Sciences, 宇宙科学研究本部宇宙環境利用学研究系, 助手 2005: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部宇宙環境利用科学研究系, 助手 2004 – 2005: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部・宇宙環境利用科学研究系, 助手 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Material processing/treatments / Broad Section D / Metal making/Resorce production engineering / Electron device/Electronic equipment / Science and Engineering / Metal making engineering / Microdevices/Nanodevices Except Principal Investigator Material processing/treatments … More / Transformative Research Areas, Section (II) / Medium-sized Section 28:Nano/micro science and related fields / Science and Engineering / Physical properties of metals / Nanomaterials chemistry Less
Keywords	Principal Investigator 2次元材料 / グラフェン / トンネルFET / 超低消費電力 / h-BN / トンネルトランジスタ / 超低消費電力デバイス / ALD / 層状物質 / 電界効果トランジスタ … More / コンタクト抵抗 / CVD / 移動度 / ゲート絶縁膜 / トランジスタ / 急速凝固 / 置換型ドーピング / 超低消費電力動作 / ドーピング / WSe2 / MoS2 / 2Dヘテロ界面 / 低消費電力 / ヘテロ界面 / 2次元層状材料 / トンネル現象 / 圧電 / 強誘電特性 / 2次元強誘電体 / SnS / 圧電・強誘電 / 環境発電 / CVD成長 / ヘテロ構造 / 直接成長 / ファンでアワールスヘテロ / ゲートスタック / 2次元層状半導体 / 絶縁破壊 / high-k絶縁膜 / 高誘電率 / 複合化 / 2D材料 / high-kゲート / 絶縁膜堆積 / ２次元層状材料 / Y2O3 / ホットエレクトロン / バッファー層 / ホットエレクトロントランジスタ / トップゲート / 複層界面相互作用 / 結晶成長 / トランスポート / 服装界面相互作用 / 複層化技術 / 散乱機構 / 原子層膜 / 結晶評価 / 結晶育成 / 複層化 / 原子層 / 輸送特性 / 物理吸着 / 化学結合 / コンタクト / 状態密度 / MICA / Cu / 高移動度 / 単結晶 / 電界効果 / グラフェン電界効果トランジスタ / ナノ電子デバイス / 熱伝達係数 / 冷却基板 / 赤外カメラ / シリコン / メルトスピン / ベロブスカイト構造 / 準安定相 / ペロブスカイト構造 / 酸化物 / 過冷却 … More Except Principal Investigator グラフェン / 遷移金属ダイカルコゲナイド / 原子層物質 / 無容器プロセス / ２.５次元物質 / インターカレーション / 二層グラフェン / Nd-Fe-B / 複合原子層 / 遷移金属カルコゲナイド / 過冷融液 / シリコン / 相変態 / 過冷凝固 / ドロップチューブ / ドロップチューブ法 / 準安定相 / 2D Materials / Wafer-scale / epitaxy growth / MoS2 / sapphire / mono-orientation / single-crystallinity / Symmetry / エネルギーデバイス / 光デバイス / 電子デバイス / 界面・空間 / 層間ナノ空間 / ファンデルワールス相互作用 / モアレ超格子 / ファンデルワールス相互小夜 / 二次元ヘテロ構造 / 社会変革 / 二次元ナノ空間 / ファンデルワールス制御 / 転写法 / 転写技術 / トランジスタ / 転写プロセス / CVD成長 / 電界効果トランジスタ / CVD / 単層グラフェン / マイクロ・ナノテバイス / 触媒・化学プロセス / 結晶成長 / マイクロ・ナノデバイス / ナノ材料 / 原子層分子 / SIC / 電極材料 / 量子ホール状態 / モアレ構造 / ナノシート / h-BN / バレートロニクス / THｚ分光 / 有機合成 / 角度分解光電子分光 / THz分光 / 強磁場施設 / h-BN 資料提供 / 六方窒化ホウ素 / ２次元物理 / electromagnetic levitation / diffusion / density / germanium / silicon / Wiedemann-Franz law / thermal conductivity / undercooled melt / 静磁場 / 対流 / 熱物性 / 電磁浮遊 / 半導体融液 / 過冷却 / 電磁浮遊法 / 拡散 / 密度 / ゲルマニウム / Wiedemann-Franz則 / 熱伝導率 / Phase transformation / Near-net shape casting / Metastable phase / Undercooling / Containerless processing / ニアネットシェイプキャスティング / ニアネットシェイプキャスティング / 遷移金属カルコゲン物質 / 原子層 / 中間報告書 / 気相化学合成 / NT15 / 複合原子層物質 / CNT25 / A3シンポジウム / 量子デバイス / グラフェンフラッグシップ / 原子層超伝導 / 物性実験 / 磁性 / 過冷却液 / 金属物性 / 電子・磁気物性 / 静電浮遊炉 / セミソリッド / 球状結晶 / AIP / 溶解度積 / AlP / semi-solidプロセス / 球状Si結晶 / Nd-Fe-B合金 / Nd-Fe-B合 / ナノコンポジット Less

Symmetry-directed Epitaxy Growth of 2D Semiconducting Transition Metal Dichalcogenides with continuous single crystallinity and ultralow defect density
- Principal Investigator
  
  トンヴィンセント
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  The University of Tokyo
Proposal of integratable two dimensional tunnel FET structure and demonstration of its ultra-low power operationPrincipal Investigator
- Principal Investigator
  
  長汐晃輔
- Project Period (FY)
  2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Integration of 2 dimensional tunnel FET for ultra-low power consumption systemPrincipal Investigator
- Principal Investigator
  
  長汐晃輔
- Project Period (FY)
  2022 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  The University of Tokyo
General Management of Innovative Area of 2.5 Dimensional Materials Science
- Principal Investigator
  
  吾郷浩樹
- Project Period (FY)
  2021 – 2025
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Kyushu University
Development of Electronic, Photonic, and Energy Applications with 2.5 Dimensional Structures
- Principal Investigator
  
  上野貢生
- Project Period (FY)
  2021 – 2025
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Hokkaido University
Demonstration of piezoelectric properties of novel 2D materials toward energy harvestingPrincipal Investigator
- Principal Investigator
  
  Nagashio Kosuke
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
2D tunnel FET based on understanding of 2D hetero interface characteristicsPrincipal Investigator
- Principal Investigator
  
  Kosuke NAGASHIO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Tailor-made synthesis and future development of graphene
- Principal Investigator
  
  AGO Hiroki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Kyushu University
Universal gate stack for 2D layered channelPrincipal Investigator
- Principal Investigator
  
  Nagashio Kosuke
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Direct growth of graphene on h-BN using the Cu vaporPrincipal Investigator
- Principal Investigator
  
  Nagashio Kosuke
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Metal making/Resorce production engineering
- Research Institution
  The University of Tokyo
International supports of atomic layered materials and promoting the collaborated research
- Principal Investigator
  
  Saito Riichiro
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Synthesis and device applications of AB-stacked bilayer graphene
- Principal Investigator
  
  AGO HIROKI
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials chemistry
- Research Institution
  Kyushu University
Improvement of current gain for graphene-base hot electron transistorsPrincipal Investigator
- Principal Investigator
  
  Nagashio Kosuke
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Promotion of Science Atomic layers
- Principal Investigator
  
  Saito Riichiro
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Understanding and device application of the hetero-atomic layersPrincipal Investigator
- Principal Investigator
  
  NAGASHIO Kosuke
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Improvement of mobility for CVD graphene by removing catalytic metalPrincipal Investigator
- Principal Investigator
  
  NAGASHIO Kosuke
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Metal making engineering
- Research Institution
  The University of Tokyo
Current injection at the graphene/metal interface with the large difference in DOSsPrincipal Investigator
- Principal Investigator
  
  NAGASHIO Kosuke
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Increase in off current of bilayer graphene by band gap engineering caused by external electrostatic fieldPrincipal Investigator
- Principal Investigator
  
  NAGASHIO Kosuke
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The University of Tokyo
Magnetic Property of Undercooled Co Alloy Melt
- Principal Investigator
  
  INATOMI Yuko
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Japan Aerospace Exploration Agency
赤外線カメラを用いたメルトスピンによる急速凝固過程の解明Principal Investigator
- Principal Investigator
  
  長汐晃輔
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Material processing/treatments
- Research Institution
  The University of Tokyo
  Japan Aerospace Exploration Agency
Manufacturing Process of Axisymmetric Teardrop Crystal of Si for Solar-cell
- Principal Investigator
  
  KURIBAYASHI Kazuhiko
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Material processing/treatments
- Research Institution
  Japan Aerospace Exploration Agency
準安定相の生成・分解を利用したNd-Fe-Bナノコンポジット磁石の創成
- Principal Investigator
  
  栗林一彦
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Material processing/treatments
- Research Institution
  Japan Aerospace Exploration Agency
大過冷を利用した新しい非線形光学材料創成プロセスの提案Principal Investigator
- Principal Investigator
  
  長汐晃輔
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Material processing/treatments
- Research Institution
  Japan Aerospace Exploration Agency
Heat and Mass Transport in Undercooled Melts of Germanium and Silicon
- Principal Investigator
  
  INATOMI Yuko
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Japan Aerospace Exploration Agency
Near-net Shape Casting of Rare-earth Iron Magnet from Undercooled Melt
- Principal Investigator
  
  KURIBAYASHI Kazuhiko
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Material processing/treatments
- Research Institution
  Japan Aerospace Exploration Agency

[Book] 遷移金属ダイカルコゲナイドの基礎と最新動向2023
- Author(s)
  宮田耕充、吾郷浩樹、松田一成、長汐晃輔、他
- Total Pages
  326
- Publisher
  シーエムシー出版
- ISBN
  9784781317588
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Book] 遷移金属ダイカルコゲナイドの基礎と最新動向2023
- Author(s)
  宮田耕充、吾郷浩樹、松田一成、長汐晃輔
- Total Pages
  120
- Publisher
  シーエムシー出版
- ISBN
  9784781317588
- Data Source
  KAKENHI-PROJECT-22H04957
[Book] 固体物理2023
- Author(s)
  越野幹人，松田一成，岩佐義宏，谷口尚，町田友樹，長汐晃輔，末永和知，佐藤宇史，中野匡規，花栗哲郎，島崎佑也，笹川崇男，山本倫久，斎藤優
- Total Pages
  204
- Publisher
  アグネ技術センター
- Data Source
  KAKENHI-PROJECT-22H04957
[Book] 遷移金属ダイカルコゲナイドの基礎と最新動向2023
- Author(s)
  宮田耕充, 吾郷浩樹, 松田一成, 長汐晃輔
- Total Pages
  324
- Publisher
  シーエムシー出版
- ISBN
  9784781317588
- Data Source
  KAKENHI-PLANNED-21H05237
[Book] 固体物理2023
- Author(s)
  長汐晃輔
- Total Pages
  206
- Publisher
  アグネ技術センター
- Data Source
  KAKENHI-PLANNED-21H05237
[Book] 2 次元層状 SnS の面内強誘電性の実証2021
- Author(s)
  東垂水直樹，長汐晃輔
- Total Pages
  4
- Publisher
  セラミックス，2021, 56, 447-450.
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用,2020
- Author(s)
  長汐晃輔,
- Total Pages
  9
- Publisher
  エヌ・ティー・エス, 東京, 2020, pp. 183-191.
- Data Source
  KAKENHI-PROJECT-19K21956
[Book] "2次元層状ヘテロFETにおける界面特性制御",2020
- Author(s)
  長汐晃輔,
- Total Pages
  8
- Publisher
  応用物理, 2020, 89, 139-146.
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用,2020
- Author(s)
  長汐晃輔,
- Total Pages
  9
- Publisher
  エヌ・ティー・エス, 東京, 2020, pp. 33-41, ISBN:9784860436636
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線,2020
- Author(s)
  長汐晃輔,
- Total Pages
  10
- Publisher
  エヌ・ティー・エス, 東京,2020, pp. 251-260.
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] "2次元層状ヘテロFETにおける界面特性制御",2020
- Author(s)
  長汐晃輔,
- Total Pages
  8
- Publisher
  応用物理, 2020, 89, 139-146.
- Data Source
  KAKENHI-PROJECT-19K21956
[Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線,2020
- Author(s)
  長汐晃輔,
- Total Pages
  10
- Publisher
  エヌ・ティー・エス, 東京,2020, pp. 251-260.
- Data Source
  KAKENHI-PROJECT-19K21956
[Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用,2020
- Author(s)
  長汐晃輔,
- Total Pages
  9
- Publisher
  エヌ・ティー・エス, 東京, 2020, pp. 33-41
- Data Source
  KAKENHI-PROJECT-19K21956
[Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用,2020
- Author(s)
  長汐晃輔,
- Total Pages
  9
- Publisher
  エヌ・ティー・エス, 東京, 2020, pp. 183-191. ISBN:9784860436636
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] ”hBNの絶縁性破壊強さの異方性とその起源”2019
- Author(s)
  服部吉晃，長汐晃輔，
- Total Pages
  5
- Publisher
  NEW DIAMOND，2019, 35
- Data Source
  KAKENHI-PROJECT-19H00755
[Book] ”hBNの絶縁性破壊強さの異方性とその起源”2019
- Author(s)
  服部吉晃，長汐晃輔，
- Total Pages
  5
- Publisher
  NEW DIAMOND，2019, 35
- Data Source
  KAKENHI-PROJECT-19K21956
[Book] 「グラフェンの伝導特性とエネルギーギャップ形成」, 二次元物質の科学グラフェンなどの分子シートが生み出す新世界, 61-67,2017，日本化学会編 p61-67.2017
- Author(s)
  長汐晃輔
- Total Pages
  7
- Publisher
  化学同人
- Data Source
  KAKENHI-PLANNED-25107004
[Book] "2次元層状チャネルFETの電子輸送特性"2017
- Author(s)
  長汐晃輔
- Total Pages
  6
- Publisher
  応用電子物性分科会誌
- Data Source
  KAKENHI-PROJECT-16H04343
[Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号,2017
- Author(s)
  長汐晃輔
- Publisher
  日本化学会編化学同人
- Data Source
  KAKENHI-PROJECT-16K14446
[Book] "2次元層状チャネルFETの電子輸送特性"2017
- Author(s)
  長汐晃輔
- Publisher
  応用電子物性分科会誌
- Data Source
  KAKENHI-PROJECT-16K14446
[Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号, 日本化学会編2017
- Author(s)
  長汐晃輔
- Total Pages
  7
- Publisher
  化学同人
- Data Source
  KAKENHI-PROJECT-16H04343
[Book] 2D materials for nanoelectronics2016
- Author(s)
  A. Toriumi, K. Nagashio
- Publisher
  CRC Press
- Data Source
  KAKENHI-PROJECT-16K14446
[Book] 「電界効果トランジスタにおけるゲートスタック形成と評価」カーボンナノチューブ・グラフェンの応用研究最前線2016
- Author(s)
  長汐晃輔
- Publisher
  エヌ・ティー・エス
- Data Source
  KAKENHI-PLANNED-25107004
[Book] 「Metal contacts to Graphene」 2D materials for nanoelectronics, edited by M.Houssa, A. Dimoulas, A. Molle2016
- Author(s)
  Akira Toriumi, Koske Nagashio
- Publisher
  CRC Press
- Data Source
  KAKENHI-PLANNED-25107004
[Book] "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016
- Author(s)
  長汐晃輔,
- Publisher
  エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-16K14446
[Book] , "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016
- Author(s)
  長汐晃輔
- Publisher
  エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-16H04343
[Book] 2D materials for nanoelectronics2016
- Author(s)
  A. Toriumi, K. Nagashio
- Publisher
  CRC Press
- Data Source
  KAKENHI-PROJECT-16H04343
[Book] 「Graphene/metal contact」 in Frontiers of graphene and carbon nanotubes-Devices and applications2015
- Author(s)
  K. Nagashio, A. Toriumi
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-25107004
[Book] Frontiers of graphene and carbon nanotubes2015
- Author(s)
  K. Nagashio, A. Toriumi
- Total Pages
  25
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-24686039
[Book] Frontiers of graphene and carbon nanotubes2015
- Author(s)
  K. Nagashio, A. Toriumi
- Total Pages
  25
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-26630121
[Book] グラフェンの最先端技術と拡がる応用2012
- Author(s)
  長汐晃輔, 鳥海明
- Publisher
  フロンティア出版
- Data Source
  KAKENHI-PROJECT-24686039
[Book] グラフェンの機能と応用展望II2012
- Author(s)
  長汐晃輔, 鳥海明
- Publisher
  フロンティア出版
- Data Source
  KAKENHI-PROJECT-24686039
[Book] グラフェン・イノベーション2011
- Author(s)
  長汐晃輔, 鳥海明
- Total Pages
  13
- Publisher
  日経BP社,東京
- Data Source
  KAKENHI-PROJECT-21710136
[Book] Crystal growth of spherical Si, Crystal growth of Si forsolar cells(ed. by T. Fukuda)(in press)
- Author(s)
  K. Nagashio, K. Kuribayashi
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction2024
- Author(s)
  Fukui Tomohiro、Nishimura Tomonori、Miyata Yasumitsu、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials and Interfaces
  
  Volume: 16 Issue: 7 Pages: 8993-9001
- DOI
  10.1021/acsami.3c15535
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05234, KAKENHI-PUBLICLY-22H05445, KAKENHI-PROJECT-22H00283
[Journal Article] Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics2023
- Author(s)
  Ogura Hiroto、Kawasaki Seiya、Liu Zheng、Endo Takahiko、Maruyama Mina、Gao Yanlin、Nakanishi Yusuke、Lim Hong En、Yanagi Kazuhiro、Irisawa Toshifumi、Ueno Keiji、Okada Susumu、Nagashio Kosuke、Miyata Yasumitsu
- Journal Title
  
  ACS Nano
  
  Volume: 17 Issue: 7 Pages: 6545-6554
- DOI
  10.1021/acsnano.2c11927
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K14484, KAKENHI-PLANNED-21H05234, KAKENHI-PUBLICLY-22H05445, KAKENHI-PROJECT-20H02080, KAKENHI-PROJECT-20H02572, KAKENHI-PROJECT-20H02605, KAKENHI-PROJECT-22KJ2554, KAKENHI-PROJECT-21K14498, KAKENHI-PLANNED-21H05237, KAKENHI-PUBLICLY-22H05469, KAKENHI-PROJECT-22H04957, KAKENHI-PROJECT-23K26500
[Journal Article] Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS2023
- Author(s)
  Chang Yih‐Ren、Nanae Ryo、Kitamura Satsuki、Nishimura Tomonori、Wang Haonan、Xiang Yubei、Shinokita Keisuke、Matsuda Kazunari、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Advanced Materials
  
  Volume: 35 Issue: 29 Pages: 2301172-2301172
- DOI
  10.1002/adma.202301172
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K18986, KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05235, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-20H05664, KAKENHI-PROJECT-22H04957, KAKENHI-PROJECT-21H01012
[Journal Article] p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors2023
- Author(s)
  Kato Ryoichi、Uchiyama Haruki、Nishimura Tomonori、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Chen Edward、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials and Interfaces
  
  Volume: 15 Issue: 22 Pages: 26977-26984
- DOI
  10.1021/acsami.3c04052
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05237, KAKENHI-PUBLICLY-22H05445, KAKENHI-PROJECT-22H04957
[Journal Article] Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes2023
- Author(s)
  Fang N.、Chang Y. R.、Yamashita D.、Fujii S.、Maruyama M.、Gao Y.、Fong C. F.、Otsuka K.、Nagashio K.、Okada S.、Kato Y. K.
- Journal Title
  
  Nature Communications
  
  Volume: 14 Issue: 1 Pages: 8152-8159
- DOI
  10.1038/s41467-023-43928-2
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K14623, KAKENHI-PROJECT-22KF0407, KAKENHI-PROJECT-22K14624, KAKENHI-PROJECT-22K14625, KAKENHI-PROJECT-20H02558, KAKENHI-ORGANIZER-21H05232, KAKENHI-PROJECT-22H04957
[Journal Article] Experimental verification of SO2 and S desorption contributing to defect formation in MoS2 by thermal desorption spectroscopy2023
- Author(s)
  Li Shuhong、Nishimura Tomonori、Maruyama Mina、Okada Susumu、Nagashio Kosuke
- Journal Title
  
  Nanoscale Advances
  
  Volume: 5 Issue: 2 Pages: 405-411
- DOI
  10.1039/d2na00636g
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K14484, KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices2023
- Author(s)
  Ngamprapawat Supawan、Kawase Jimpei、Nishimura Tomonori、Watanabe Kenji、Taniguchi Takashi、Nagashio Kosuke
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: 9 Issue: 8 Pages: 2300083-2300083
- DOI
  10.1002/aelm.202300083
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KJ0416, KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Work Function Modulation of Bi/Au Bilayer System toward p-Type WSe2 FET2023
- Author(s)
  Nakajima Ryuichi、Nishimura Tomonori、Ueno Keiji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 6 Issue: 1 Pages: 144-149
- DOI
  10.1021/acsaelm.3c01091
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PUBLICLY-22H05445
[Journal Article] 2次元圧電/強誘電物質2023
- Author(s)
  長汐晃輔
- Journal Title
  
  固体物理
  
  Volume: 58 Pages: 49-56
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Journal Article] A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-k Er2O3 Insulator Through Thermal Evaporation2023
- Author(s)
  Uchiyama Haruki、Maruyama Kohei、Chen Edward、Nishimura Tomonori、Nagashio Kosuke
- Journal Title
  
  Small
  
  Volume: 19 Issue: 15 Pages: 2207394-2207394
- DOI
  10.1002/smll.202207394
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Is band gap of bulk PdSe2 located really in far infrared region? Determination by Fourier Transform Photocurrent Spectroscopy2022
- Author(s)
  W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, and K. Nagashio
- Journal Title
  
  Adv. Photonics Res.
  
  Volume: 3 Issue: 11 Pages: 231-232
- DOI
  10.1002/adpr.202200231
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PUBLICLY-22H05445, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN2022
- Author(s)
  T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
- Journal Title
  
  ACS Appl. Mater. Interfaces
  
  Volume: 14 Issue: 22 Pages: 25659-25669
- DOI
  10.1021/acsami.2c03198
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-22H05445, KAKENHI-PROJECT-20H00354, KAKENHI-PLANNED-21H05233, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers2022
- Author(s)
  Moqbel Redhwan、Chang Yih-Ren、Li Zi-Yi、Kung Sheng-Hsun、Cheng Hao-Yu、Lee Chi-Cheng、Nagashio Kosuke、Lin Kung-Hsuan
- Journal Title
  
  2D Materials
  
  Volume: 10 Issue: 1 Pages: 015022-015022
- DOI
  10.1088/2053-1583/acab74
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PROJECT-22H04957
[Journal Article] Current Injection into Single-Crystalline Carbon-Dope h-BN toward Electronic and Optoelectronic Applications2022
- Author(s)
  Ngamprapawat Supawan、Nishimura Tomonori、Watanabe Kenji、Taniguchi Takashi、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials and Interfaces
  
  Volume: 14 Issue: 22 Pages: 25731-25740
- DOI
  10.1021/acsami.2c04544
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00354, KAKENHI-PLANNED-21H05233, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets2022
- Author(s)
  Fang Nan、Yamashita Daiki、Fujii Shun、Otsuka Keigo、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke、Kato Yuichiro K.
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 10 Issue: 19 Pages: 2200538-2200538
- DOI
  10.1002/adom.202200538
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PROJECT-22K14624, KAKENHI-PLANNED-21H05233, KAKENHI-PROJECT-22H04957, KAKENHI-PROJECT-20H02558, KAKENHI-PROJECT-20J00817
[Journal Article] Performance Enhancement of SnS/{\it h}-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method2022
- Author(s)
  Chang Yih-Ren、Nishimura Tomonori、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 14 Issue: 17 Pages: 19928-19937
- DOI
  10.1021/acsami.2c05534
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21H05233, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation2022
- Author(s)
  Ago Hiroki、Okada Susumu、Miyata Yasumitsu、Matsuda Kazunari、Koshino Mikito、Ueno Kosei、Nagashio Kosuke
- Journal Title
  
  Science and Technology of Advanced Materials
  
  Volume: - Issue: 1 Pages: 275-299
- DOI
  10.1080/14686996.2022.2062576
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05235, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-18H03864, KAKENHI-PROJECT-21K18878, KAKENHI-PLANNED-21H05234, KAKENHI-PLANNED-21H05236, KAKENHI-PROJECT-20H01840, KAKENHI-PROJECT-18H05205, KAKENHI-PLANNED-21H05233, KAKENHI-PROJECT-20H05664, KAKENHI-PROJECT-22H04957
[Journal Article] Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices2021
- Author(s)
  Chang Yih-Ren、Nishimura Tomonori、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 13 Issue: 36 Pages: 43282-43289
- DOI
  10.1021/acsami.1c13279
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755
[Journal Article] Identification of the position of piezoelectric polarization at the MoS2/metal interface2021
- Author(s)
  Umeda Masaya、Higashitarumizu Naoki、Kitaura Ryo、Nishimura Tomonori、Nagashio Kosuke
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 12 Pages: 125002-125002
- DOI
  10.35848/1882-0786/ac3d1f
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-20H02566, KAKENHI-PROJECT-21K18930
[Journal Article] Quantitative determination of contradictory bandgap values of bulk PdSe2 from electrical transport properties2021
- Author(s)
  Nishiyama Wataru、Nishimura Tomonori、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Advanced Functional Materials
  
  Volume: 32 Issue: 9 Pages: 2108061-2108061
- DOI
  10.1002/adfm.202108061
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-22H04957
[Journal Article] Intrinsic Electronic Transport Properties and Carrier Densities in PtS and SnSe: Exploration of n+‐Source for 2D Tunnel FETs2021
- Author(s)
  Sato Yuichiro、Nishimura Tomonori、Duanfei Dong、Ueno Keiji、Shinokita Keisuke、Matsuda Kazunari、Nagashio Kosuke
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: 7 Issue: 12 Pages: 2100292-2100292
- DOI
  10.1002/aelm.202100292
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K22142, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-20H05664
[Journal Article] Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory2021
- Author(s)
  Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
- Journal Title
  
  ACS Nano
  
  Volume: 15 Issue: 4 Pages: 6658-6668
- DOI
  10.1021/acsnano.0c10005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755
[Journal Article] Thickness-dependent Raman active modes of SnS thin films2021
- Author(s)
  Yonemori Itsuki、Dutta Sudipta、Nagashio Kosuke、Wakabayashi Katsunori
- Journal Title
  
  AIP Advances
  
  Volume: 11 Issue: 9 Pages: 095106-095106
- DOI
  10.1063/5.0062857
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-21H01019
[Journal Article] Quantum-mechanical effect in atomically thin MoS 2 FET2020
- Author(s)
  Fang Nan、Nagashio Kosuke
- Journal Title
  
  2D Materials
  
  Volume: 7 Issue: 1 Pages: 014001-014001
- DOI
  10.1088/2053-1583/ab42c0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Purely in-plane ferroelectricity in monolayer SnS at room temperature2020
- Author(s)
  Higashitarumizu Naoki、Kawamoto Hayami、Lee Chien-Ju、Lin Bo-Han、Chu Fu-Hsien、Yonemori Itsuki、Nishimura Tomonori、Wakabayashi Katsunori、Chang Wen-Hao、Nagashio Kosuke
- Journal Title
  
  Nature Communications
  
  Volume: 11 Issue: 1 Pages: 1-5
- DOI
  10.1038/s41467-020-16291-9
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-18H01154, KAKENHI-PROJECT-19J13579, KAKENHI-PROJECT-19K21956
[Journal Article] Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene2020
- Author(s)
  Solis-Fernandez Pablo、Terao Yuri、Kawahara Kenji、Nishiyama Wataru、Uwanno Teerayut、Lin Yung-Chang、Yamamoto Keisuke、Nakashima Hiroshi、Nagashio Kosuke、Hibino Hiroki、Suenaga Kazu、Ago Hiroki
- Journal Title
  
  ACS Nano
  
  Volume: 14 Issue: 6 Pages: 6834-6844
- DOI
  10.1021/acsnano.0c00645
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K14119, KAKENHI-PROJECT-16H06333, KAKENHI-PROJECT-18H03864, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19K22113
[Journal Article] Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS22020
- Author(s)
  Maruyama Mina、Nagashio Kosuke、Okada Susumu
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 2 Issue: 5 Pages: 1352-1357
- DOI
  10.1021/acsaelm.0c00139
- NAID
  120007127633
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01069, KAKENHI-PROJECT-20K05253, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Carrier Distribution Control in van der Waals Heterostructures of MoS2 and WS2 by Field-Induced Band-Edge Engineering2020
- Author(s)
  Maruyama Mina、Nagashio Kosuke、Okada Susumu
- Journal Title
  
  Physical Review Applied
  
  Volume: 14 Issue: 4 Pages: 044028-044028
- DOI
  10.1103/physrevapplied.14.044028
- NAID
  120007132502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05253, KAKENHI-PROJECT-20H05664, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Micrometer-scale monolayer SnS growth by physical vapor deposition2020
- Author(s)
  Kawamoto H.、Higashitarumizu N.、Nagamura N.、Nakamura M.、Shimamura K.、Ohashi N.、Nagashio K.
- Journal Title
  
  Nanoscale
  
  Volume: 12 Issue: 45 Pages: 23274-23281
- DOI
  10.1039/d0nr06022d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19J13579, KAKENHI-PROJECT-19K21956
[Journal Article] All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality2020
- Author(s)
  Nakamura Keigo、Nagamura Naoka、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 12 Issue: 46 Pages: 51598-51606
- DOI
  10.1021/acsami.0c13233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Understanding interface properties in 2D heterostructure FETs2020
- Author(s)
  Nagashio Kosuke
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 35 Issue: 10 Pages: 103003-103003
- DOI
  10.1088/1361-6641/aba287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage2020
- Author(s)
  Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
- Journal Title
  
  Small
  
  Volume: 16 Issue: 47 Pages: 2004907-2004907
- DOI
  10.1002/smll.202004907
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
[Journal Article] Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics2020
- Author(s)
  N. Fang, K. Otsuka, A. Ishii, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato
- Journal Title
  
  ACS Photonics
  
  Volume: 7 Issue: 7 Pages: 1773-1779
- DOI
  10.1021/acsphotonics.0c00406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K15120, KAKENHI-PROJECT-20K15137, KAKENHI-PROJECT-19K23593, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-20H00354, KAKENHI-PROJECT-19J00894, KAKENHI-PROJECT-19K21956
[Journal Article] Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS22019
- Author(s)
  Asakura Eito、Suzuki Masaki、Karube Shutaro、Nitta Junsaku、Nagashio Kosuke、Kohda Makoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 6 Pages: 063005-063005
- DOI
  10.7567/1882-0786/ab21a8
- NAID
  210000156025
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21956, KAKENHI-PLANNED-15H05854, KAKENHI-PROJECT-15H02099, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-15H05699
[Journal Article] Influence of interface dipole layers on the performance of graphene field effect transistors2019
- Author(s)
  Nagamura Naoka、Fukidome Hirokazu、Nagashio Kosuke、Horiba Koji、Ide Takayuki、Funakubo Kazutoshi、Tashima Keiichiro、Toriumi Akira、Suemitsu Maki、Horn Karsten、Oshima Masaharu
- Journal Title
  
  Carbon
  
  Volume: 152 Pages: 680-687
- DOI
  10.1016/j.carbon.2019.06.038
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-16H06361, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-18K19011, KAKENHI-PROJECT-19H02590
[Journal Article] Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices2019
- Author(s)
  Li Weisheng、Zhou Jian、Cai Songhua、Yu Zhihao、Zhang Jialin、Fang Nan、Li Taotao、Wu Yun、Chen Tangsheng、Xie Xiaoyu、Ma Haibo、Yan Ke、Dai Ningxuan、Wu Xiangjin、Zhao Huijuan、Wang Zixuan、He Daowei、Pan Lijia、Shi Yi、Wang Peng、Chen Wei、Nagashio Kosuke、Duan Xiangfeng、Wang Xinran
- Journal Title
  
  Nature Electronics
  
  Volume: 2 Issue: 12 Pages: 563-571
- DOI
  10.1038/s41928-019-0334-y
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
[Journal Article] Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors2019
- Author(s)
  Fang Nan、Toyoda Satoshi、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Advanced Functional Materials
  
  Volume: 29 Issue: 49 Pages: 1904465-1904465
- DOI
  10.1002/adfm.201904465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
[Journal Article] Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes2019
- Author(s)
  Toyoda Satoshi、Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 5 Pages: 055008-055008
- DOI
  10.7567/1882-0786/ab176b
- NAID
  210000155715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
[Journal Article] Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation2018
- Author(s)
  Higashitarumizu Naoki、Kawamoto Hayami、Nakamura Masaru、Shimamura Kiyoshi、Ohashi Naoki、Ueno Keiji、Nagashio Kosuke
- Journal Title
  
  Nanoscale
  
  Volume: 10 Issue: 47 Pages: 22474-22483
- DOI
  10.1039/c8nr06390g
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343
[Journal Article] Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue2018
- Author(s)
  Matsuoka Ryota、Toyoda Ryojun、Shiotsuki Ryo、Fukui Naoya、Wada Keisuke、Maeda Hiroaki、Sakamoto Ryota、Sasaki Sono、Masunaga Hiroyasu、Nagashio Kosuke、Nishihara Hiroshi
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 10 Issue: 3 Pages: 2730-2733
- DOI
  10.1021/acsami.8b00743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26708005, KAKENHI-PUBLICLY-16H00900, KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755, KAKENHI-PUBLICLY-17H05354, KAKENHI-PROJECT-26220801, KAKENHI-PROJECT-17H03028
[Journal Article] Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching2018
- Author(s)
  Ji Hyun Goo、Lin Yung-Chang、Nagashio Kosuke、Maruyama Mina、Sol?s-Fern?ndez Pablo、Sukma Aji Adha、Panchal Vishal、Okada Susumu、Suenaga Kazu、Ago Hiroki
- Journal Title
  
  Chemistry of Materials
  
  Volume: 30 Issue: 2 Pages: 403-411
- DOI
  10.1021/acs.chemmater.7b04149
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19036, KAKENHI-PUBLICLY-16H00917, KAKENHI-PROJECT-15H03530, KAKENHI-PROJECT-16H04343
[Journal Article] Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor2018
- Author(s)
  Fang Nan、Nagashio Kosuke
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 51 Issue: 6 Pages: 065110-065119
- DOI
  10.1088/1361-6463/aaa58c
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17J09690, KAKENHI-PROJECT-16H04343
[Journal Article] Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors2018
- Author(s)
  Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 10 Issue: 34 Pages: 28780-28788
- DOI
  10.1021/acsami.8b08959
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343
[Journal Article] Type-II HfS<sub>2</sub>/MoS<sub>2</sub> Heterojunction Transistors2018
- Author(s)
  Netsu Seiko、Kanazawa Toru、Uwanno Teerayut、Amemiya Tomohiro、Nagashio Kosuke、Miyamoto Yasuyuki
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E101.C Issue: 5 Pages: 338-342
- DOI
  10.1587/transele.E101.C.338
- NAID
  130006729710
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2018-05-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-16H00905, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16H06082
[Journal Article] Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET2018
- Author(s)
  Taniguchi Koki、Fang Nan、Nagashio Kosuke
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 13 Pages: 133505-133505
- DOI
  10.1063/1.5048099
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343
[Journal Article] Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application2018
- Author(s)
  Higashitarumizu Naoki、Kawamoto Hayami、Ueno Keiji、Nagashio Kosuke
- Journal Title
  
  MRS Advances
  
  Volume: 3 Issue: 45-46 Pages: 2809-2814
- DOI
  10.1557/adv.2018.404
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343
[Journal Article] Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule2018
- Author(s)
  Fang Nan、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 10 Issue: 38 Pages: 32355-32364
- DOI
  10.1021/acsami.8b10687
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-17J09690
[Journal Article] Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement2018
- Author(s)
  Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Physical Review B
  
  Volume: 97 Issue: 4
- DOI
  10.1103/physrevb.97.045425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14656, KAKENHI-PROJECT-16H04343
[Journal Article] 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source2018
- Author(s)
  He Junyang、Fang Nan、Nakamura Keigo、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: 4 Issue: 7 Pages: 1800207-1800207
- DOI
  10.1002/aelm.201800207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04343
[Journal Article] Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface2018
- Author(s)
  Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 10 Issue: 14 Pages: 11732-11738
- DOI
  10.1021/acsami.7b18454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14656, KAKENHI-PROJECT-16H04343
[Journal Article] Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance2017
- Author(s)
  Nagashio Kosuke
- Journal Title
  
  J. Mater. Res
  
  Volume: 32 Issue: 1 Pages: 64-72
- DOI
  10.1557/jmr.2016.366
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343
[Journal Article] "Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics"2017
- Author(s)
  N. Fang, K. Nagashio, and A. Toriumi
- Journal Title
  
  2D Materials
  
  Volume: 4 Issue: 1 Pages: 015035-015035
- DOI
  10.1088/2053-1583/aa50c4
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13941, KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
[Journal Article] Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface2017
- Author(s)
  Ryota Matsuoka, *Ryota Sakamoto, Ken Hoshiko, Sono Sasaki, Hiroyasu Masunaga, Kosuke Nagashio, *Hiroshi Nishihara
- Journal Title
  
  J. Am. Chem. Soc.
  
  Volume: 139 Issue: 8 Pages: 3145-3152
- DOI
  10.1021/jacs.6b12776
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220801, KAKENHI-PROJECT-14J09288, KAKENHI-PROJECT-26620039, KAKENHI-PUBLICLY-15H00862, KAKENHI-PROJECT-26708005, KAKENHI-PUBLICLY-16H00957, KAKENHI-PROJECT-16K14446, KAKENHI-PUBLICLY-16H00900, KAKENHI-PROJECT-16H04343
[Journal Article] Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition2017
- Author(s)
  S. Kurabayashi, and K. Nagashio
- Journal Title
  
  Nanoscale
  
  Volume: 9 Issue: 35 Pages: 13264-13264
- DOI
  10.1039/c7nr05385a
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
[Journal Article] Graphene field-effect transistor application -Electric band structure of graphene in transistor structure extracted from quantum capacitance-",2017
- Author(s)
  K. Nagashio
- Journal Title
  
  J. Mater. Res.
  
  Volume: 32 Pages: 64-64
- Data Source
  KAKENHI-PROJECT-16K14446
[Journal Article] (Invited) Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h -BN Insulator2017
- Author(s)
  Nagashio Kosuke、Hattori Yoshiaki、Takahashi Nobuaki、Taniguchi Takashi、Watanabe Kenji、Bao Jianfeng、Norimatsu Wataru、Kusunoki Michiko
- Journal Title
  
  ECS Transactions
  
  Volume: 79 Issue: 1 Pages: 91-97
- DOI
  10.1149/07901.0091ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343
[Journal Article] Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator2017
- Author(s)
  K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao
- Journal Title
  
  ECS Transactions
  
  Volume: 79 Pages: 91-97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K14446
[Journal Article] Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets2017
- Author(s)
  S. Sekizaki, M. Osada, K. Nagashio
- Journal Title
  
  Nanoscale, 9, 6471
  
  Volume: 9 Issue: 19 Pages: 6471-6471
- DOI
  10.1039/c7nr01305a
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-17H03395, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
[Journal Article] Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition2016
- Author(s)
  N. Takahashi and K. Nagashio
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 9 Issue: 12 Pages: 125101-125101
- DOI
  10.7567/apex.9.125101
- NAID
  210000138125
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
[Journal Article] Anisotropic breakdown strength of single crystal hexagonal Boron Nitride2016
- Author(s)
  Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio
- Journal Title
  
  ACS appl. mater. interfaces
  
  Volume: 8 Issue: 41 Pages: 27877-27877
- DOI
  10.1021/acsami.6b06425
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
[Journal Article] Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride2016
- Author(s)
  Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 25 Pages: 253111-253111
- DOI
  10.1063/1.4972555
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
[Journal Article] "Subthreshold transport in mono- and multilayered MoS2 FETs"2015
- Author(s)
  N. Fang, K. Nagashio, and A. Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 6 Pages: 065203-065203
- DOI
  10.7567/apex.8.065203
- NAID
  210000137562
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13941, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs2015
- Author(s)
  N. Takahashi, T. Taniguchi, K. Watanabe, and K. Nagashio
- Journal Title
  
  Nanotechnology
  
  Volume: 26(17) Issue: 17 Pages: 175708-175708
- DOI
  10.1088/0957-4484/26/17/175708
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] Gap state analysis in electric-field-induced band gap for bilayer graphene2015
- Author(s)
  K. Kanayama, and K. Nagashio
- Journal Title
  
  Sci. Rep.
  
  Volume: 5 Issue: 1 Pages: 041002-041002
- DOI
  10.1038/srep15789
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system2015
- Author(s)
  T. Uwanno, Y. Hattori, T Taniguchi, K Watanabe and K Nagashio
- Journal Title
  
  2D mater.
  
  Volume: 2 Issue: 4 Pages: 041002-041002
- DOI
  10.1088/2053-1583/2/4/041002
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Journal Article] Layer-by-layer dielectric breakdown of hexagonal boron nitride2015
- Author(s)
  Y. Hattori, K. Watanabe, T. Taniguchi, and K. Nagashio
- Journal Title
  
  ACS nano
  
  Volume: 9 Issue: 1 Pages: 916-921
- DOI
  10.1021/nn506645q
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26886003, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] Quantum capacitance measurement of bilayer graphene2014
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Journal Title
  
  ECS Trans.
  
  Volume: 61 Issue: 3 Pages: 75-75
- DOI
  10.1149/06103.0075ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
[Journal Article] Crystal orientation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica2014
- Author(s)
  J. L. Qi, K. Nagashio, T. Nishimura, A. Toriumi
- Journal Title
  
  Nanotechnology
  
  Volume: 25 Issue: 18 Pages: 185602-185602
- DOI
  10.1088/0957-4484/25/18/185602
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] Large Fermi level modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators2014
- Author(s)
  K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Issue: 8 Pages: 083519-083519
- DOI
  10.1063/1.4867202
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] The crystal orientation relation and macroscopic surface roughness in heteroepitaxial graphene grown on Cu/mica2014
- Author(s)
  J. L. Qi, K. Nagashio, T. Nishimura and A. Toriumi
- Journal Title
  
  Nanotechnology
  
  Volume: 25 Pages: 185602-185602
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656456
[Journal Article] Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica2014
- Author(s)
  J. L. Qi, K. Nagashio, T. Nishimura, and A. Toriumi
- Journal Title
  
  nanotechnology
  
  Volume: na
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656456
[Journal Article] グラフェン/金属コンタクト形成に対する理解と制御2013
- Author(s)
  長汐晃輔，鳥海明
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー
  
  Volume: 158 Pages: 18-21
- Data Source
  KAKENHI-PROJECT-24686039
[Journal Article] Direct observation of charge transfer region at interfaces in graphene devices2013
- Author(s)
  Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 24 Pages: 241604-241604
- DOI
  10.1063/1.4808083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24686039
[Journal Article] The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity2013
- Author(s)
  R.Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 103 Issue: 3 Pages: 33514-33514
- DOI
  10.1063/1.4815990
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
[Journal Article] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement2013
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Journal Title
  
  IEEE International Electron Device Meeting (IEDM) Tech. Dig.
  
  Volume: na Pages: 503-503
- DOI
  10.1109/iedm.2013.6724661
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
[Journal Article] Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement2013
- Author(s)
  K. Nagashio, T. Nishimura, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102 Issue: 17 Pages: 173507-173507
- DOI
  10.1063/1.4804430
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
[Journal Article] Carrier density modulation in graphene underneath the Ni electrode2013
- Author(s)
  T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi
- Journal Title
  
  J. Appl. Phys
  
  Volume: 114 Issue: 2 Pages: 24503-24503
- DOI
  10.1063/1.4813216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
[Journal Article] 本質的なグラフェン/金属界面特性2013
- Author(s)
  長汐晃輔，井福亮太，森山喬史，西村知紀，鳥海明
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー
  
  Volume: 154 Pages: 15-18
- Data Source
  KAKENHI-PROJECT-24686039
[Journal Article] Intrinsic graphene/metal contact2012
- Author(s)
  K. Nagashio, R. Ifuku, T. Moriyama, I. Nishimura and A Toriumi
- Journal Title
  
  IEDM Tech. Dig.
  
  Pages: 68-71
- NAID
  110009728053
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039
[Journal Article] グラフェン/Si02基板相互作用に対する理解と制御2012
- Author(s)
  長汐晃輔, 鳥海明
- Journal Title
  
  表面科学
  
  Volume: 33 Issue: 10 Pages: 552-556
- DOI
  10.1380/jsssj.33.552
- NAID
  130004486705
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039
[Journal Article] グラフェンFETの界面に対する理解と制御2012
- Author(s)
  長汐晃輔, 鳥海明
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95 Pages: 284-284
- NAID
  110009437459
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686039
[Journal Article] グラフェントランジスタの接合/界面に対する理解と制御2011
- Author(s)
  長汐晃輔, 鳥海明
- Journal Title
  
  グラフェン・イノベーション,日経BP社
  
  Pages: 66-79
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] グラフェンナノエレクトロニクス素子の開発に向けて-素子シュミレーションと素子作成・物性評価-2010
- Author(s)
  相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔
- Journal Title
  
  固体物理 45
  
  Pages: 63-63
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Impact of graphene/SiO_2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films2010
- Author(s)
  K.Nagashio, T.Yamashita, J.Fujita, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  IEEE International Electron Device Meeting (IEDM) Tech.Dig.
  
  Pages: 564-567
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Systematic investigation of intrinsic channel properties and contact resistance on mono- and multilayered graphene FET2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] グラフェンナノエレクトロニクス素子の開発に向けて-素子シュミレーションと素子作成・物性評価-2010
- Author(s)
  相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔
- Journal Title
  
  固体物理
  
  Volume: 45 Pages: 63-76
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Contact resistivity and current flow path at metal/graphene contact2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 97
  
  Pages: 143514-143514
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Systematic investigation of intrinsic channel properties and contact resistance on mono-and multilayered graphene FET2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 51304-51304
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Impact of graphene/SiO_2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films2010
- Author(s)
  K.Nagashio, T.Yamashita, J.Fujita, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  IEEE Int.Electron Device Meeting, Tech.Dig.
  
  Volume: 1 Pages: 564-567
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Contact resistivity and current flow path at metal/graphene contact2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 97 Pages: 143514-143514
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene - Analysis of Intrinsic Mobility and Contact Resistance -2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  IEEE International Electron Device Meeting (IEDM) Tech.Dig.
  
  Pages: 565-568
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Spherical crystallization of Si during free fall in drop-tube2009
- Author(s)
  K. Kuribayashi, K. Nagashio and M. Tajima
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 722-726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Spherical crystallization of Si during free fall in drop-tube2009
- Author(s)
  K. Kuribayashi, K. Nagashio, M. Tajima
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 722-726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] グラファイトからグラフェンへ-バンドオーバーラップ減少に伴う電子輸送特性の連続的変化-2009
- Author(s)
  長汐晃輔, 鳥海明
- Journal Title
  
  応用電子物性分科会誌 15
  
  Pages: 120-125
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Mobility Variations in Mono-and Multi-Layer Graphene Films Appl.2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Phys.Express 2
  
  Pages: 25003-25003
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Solidification behavior of intermetallic compound with strong crystallographic anisotropy2008
- Author(s)
  K. Nozaki, K. Nagashio, K. Kuribayashi
- Journal Title
  
  J. Jpn Soc. Microgravity Appl 25
  
  Pages: 583-586
- NAID
  10024269052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Metastable phase formation from undercooled melt of REFeO_3 (RE : Rareearth Element)2008
- Author(s)
  K. Kuribayashi, K. Nagashio, K. Niwata, M. S. V. Kumar, T. Hibiya
- Journal Title
  
  Review of Advanced Materials Science 18
  
  Pages: 444-447
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008
- Author(s)
  長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 田島道夫
- Journal Title
  
  まてりあ 47
  
  Pages: 147-153
- NAID
  10021148978
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Orientation analysis of hexagonal dendrite formed from an undercooled melt of α-Fe_2Si_52008
- Author(s)
  K. Nozaki, K. Nagashio, K. Kuribayashi
- Journal Title
  
  Metallurgical and Materials Transactions A 39
  
  Pages: 135-141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] In-situ observation of solidification behaviour from undercooled α -Fe_2Si_5 melt using an electromagnetic levitator2008
- Author(s)
  K. Nozaki, K. Nagashio, K. Kuribayashi
- Journal Title
  
  Review of Advanced Materials Science 18
  
  Pages: 439-443
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Microstructure formation and in situ phase identification from undercooled Co-61. 8 at. % Si melts solidified on an electromagnetic levitator and an electrostatic levitator2008
- Author(s)
  M. Li, K. Nagashio, T. Ishikawa, A. Mizuno, M. Adachi, M. Watanabe, S. Yoda, K. Kuribayashi, Y. K atayama
- Journal Title
  
  Acta Materialia 56
  
  Pages: 2514-2525
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Formation of hexagonal metastable phases from an undercooled LuFeO_3 melt in an atmosphere with low oxygen partial pressure2008
- Author(s)
  M. S. Vijaya Kumar, K. Nagashio, T. Hibiya, K. Kuribayashi
- Journal Title
  
  Journal of the American Ceramic Society 91
  
  Pages: 806-812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Formation of Hexagonal Metastable phase from an undercooled LuFeO_3 melt in an atmosphere with low oxygen partial pressure2008
- Author(s)
  M. S. Vijaya Kumar, K. Nagashio. T. Hibiya, and K. Kuribayashi
- Journal Title
  
  J. Am. Ceram. Soc. 91
  
  Pages: 806-812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Orientation analysis of hexagonal dendrite formed from undercooled melt of □-FeSi_22008
- Author(s)
  K. Nozaki, K. Nagashio, and K. Kuribayashi
- Journal Title
  
  Metal. Mater. Trans. A 39A
  
  Pages: 135-141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008
- Author(s)
  長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 神保至, 田島道夫
- Journal Title
  
  まてりあ : 日本金属学会会報 47
  
  Pages: 147-153
- NAID
  10021148978
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Nucleation of cubic phase in deeply undercooled melt of anisotropic material2008
- Author(s)
  K. Nozaki, K. Nagashio, K. Kuribayashi
- Journal Title
  
  Transaction of the Materials Research Society of Japan 33
  
  Pages: 385-388
- NAID
  130007809441
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] In-situ observation of solidification behavior from undercooled α-Fe_2Si_5 melt using an electromagnetic levitator2008
- Author(s)
  K. Nozaki, K. Nagashio, K. Kuribayashi
- Journal Title
  
  Review of Advanced Materials Science 18
  
  Pages: 439-443
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008
- Author(s)
  長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 神保至, 田島道夫
- Journal Title
  
  まてりあ 47
  
  Pages: 147-153
- NAID
  10021148978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Spreading and solidification of a highly undercooled Y_3Al_5O_<12> droplet impinging on a substrate2008
- Author(s)
  K. Nagashio, K. Kodaira, K. Kuribayashi, T. Motegi
- Journal Title
  
  International Journal of Heat and Mass Transfer 51
  
  Pages: 2455-2461
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007
- Author(s)
  H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
- Journal Title
  
  J. Jpn. Soc. Microgravity Appl. 24
  
  Pages: 3-8
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007
- Author(s)
  K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
- Journal Title
  
  J. Am. Ceram. Soc. 90
  
  Pages: 238-243
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007
- Author(s)
  K. Kuribayashi, K. Nagashio, K. Niwata, M.S.V. Kumar, T. Hibiya
- Journal Title
  
  Materials Science and Engineering A 448-451
  
  Pages: 675-679
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Density and thermal conductivity measurements for silicon melt by electromagnetic levitation under static magnetic field2007
- Author(s)
  F. Onishi, Y. Inatomi, K. Nagashio, and K. Kuribayashi
- Journal Title
  
  Int. J. Thermophysics 28
  
  Pages: 44-59
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Direct observation of the melt/substrate interface in melt spinning2007
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 1033-1035
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat2007
- Author(s)
  K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
- Journal Title
  
  J.Am.Ceram.Soc. 90
  
  Pages: 238-243
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Direct observation of the melt/substrate interface in melt spinning2007
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 1033-1035
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Direct observation of the melt/substrate interface in melt spinning2007
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Mater.Sci.Eng.A 449/451
  
  Pages: 1033-1035
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Dynamic process of dendrite fragmentation in solidification from undercooled Si melt using time-resolved x-ray diffraction2007
- Author(s)
  K. Nagashio, K. Nozaki, K. Kuribayashi, Y. Katayama
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007
- Author(s)
  K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 675-679
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007
- Author(s)
  K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
- Journal Title
  
  J. Am. Ceram. Soc. 90
  
  Pages: 238-243
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Rapid X-ray diffractometry on the metastable phase during solidification from the undercooled YFeO_3 melt2007
- Author(s)
  K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, Y. Katayama
- Journal Title
  
  Proceedings of the 5th Decennial international conference on solidification processing 2007
  
  Pages: 326-330
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007
- Author(s)
  K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 675-679
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Dynamic process ofdendrite fragmentation in solidification from undercooled Simelt using time-resolved x-ray diffi-action2007
- Author(s)
  K.Nagashio, K.nozaki & K.Kuribayashi
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007
- Author(s)
  M. Li, T. Ishikawa, K. Nagashio, K. Kuribayashi, S. Yoda
- Journal Title
  
  Mater Sci. Eng. A 449-451
  
  Pages: 684-688
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Direct observation of the melt/substrate interface in melt spinning2007
- Author(s)
  K. Nagashio and K. Kuribayashi
- Journal Title
  
  Mater Sci. Eng. A 449-451
  
  Pages: 1033-1035
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007
- Author(s)
  H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
- Journal Title
  
  J.Jpn.Soc.Microgravity Appl. 24
  
  Pages: 3-8
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Microtexture formation of Ni_<99>Bi_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 684-688
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007
- Author(s)
  K. Kuribayashi, K. Nagashio. K. Niwata, M. S. Vijaya Kumar, and T. Hibiya
- Journal Title
  
  Mater Sci. Eng. A 449-451
  
  Pages: 675-679
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007
- Author(s)
  H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
- Journal Title
  
  J. Jpn. Soc. Microgravity Appl. 24
  
  Pages: 3-8
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Mater. Sci. Eng. A 449/451
  
  Pages: 684-688
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Orientation analysis of hexagonal dendrite formed from an undercooled melt ofa-Fe_2Si_52007
- Author(s)
  K.Nozaki, K.Nagashio & K.Kuribayashi
- Journal Title
  
  Metallurgical and Materials Transactions A 39
  
  Pages: 135-141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based onthe EBSP technique2007
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Mater.Sci.Eng.A 449/451
  
  Pages: 684-688
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] 金属間化合物のデンドライト成長メカニズム-結晶構造の異方性がもたらす多様性-2007
- Author(s)
  野崎潔, 長汐晃輔, 栗林一彦
- Journal Title
  
  日本結晶成長学会誌 34
  
  Pages: 29-36
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] The dynamic process of dendrite fragmentation in solidification from undercooled Si melt using time-resolved X-ray diffraction2007
- Author(s)
  K. Nagashio. K. Nozaki, K. Kuribayashi, and Y. Katayama
- Journal Title
  
  Int. J. Thermophysics 91
  
  Pages: 61916-61916
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007
- Author(s)
  K. Nagashio, K. Kuribayashi, O. Yamaguchi, and T. Hibiya
- Journal Title
  
  J. Am. Ceram. Soc. 90
  
  Pages: 238-243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Novel criterion for formation of metastable phase from undercooled me2007
- Author(s)
  K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
- Journal Title
  
  Mater.Sci.Eng.A 449/451
  
  Pages: 675-679
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] High-speed imaging of quenched interface of an undercooled droplet impinging on a silicon wafer2007
- Author(s)
  K. Nagashio. K. Kodaira, K. Kuribayashi and T. Motegi
- Journal Title
  
  Proceedings of the 5th Decennial international conference on solidification processing 2007
  
  Pages: 297-300
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006
- Author(s)
  長汐晃輔
- Journal Title
  
  まてりあ 45
  
  Pages: 294-297
- NAID
  10017413740
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>B_1 melts solidified on an electrostatic levitator ad an electromagnetic levitator2006
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Acta mater. 54
  
  Pages: 3791-3799
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006
- Author(s)
  長汐晃輔
- Journal Title
  
  まてりあ 45
  
  Pages: 294-297
- NAID
  10017413740
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006
- Author(s)
  K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J. Appl. Phys. 100
  
  Pages: 33524-33524
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta mater. 54
  
  Pages: 2353-2360
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>B_1 melts solidified on an electrostatic levitator and an electromagnetic levitator2006
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Acta mater. 54
  
  Pages: 3791-3799
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta mater. 54
  
  Pages: 2353-2360
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006
- Author(s)
  長汐晃輔
- Journal Title
  
  まてりあ 45
  
  Pages: 294-297
- NAID
  10017413740
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006
- Author(s)
  K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
- Journal Title
  
  Appl.Phys.Lett. 89
  
  Pages: 241923-241923
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006
- Author(s)
  K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
- Journal Title
  
  Jpn. J. Appl. Phys. 45
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006
- Author(s)
  M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J. Crystal Growth 294
  
  Pages: 16-21
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006
- Author(s)
  L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
- Journal Title
  
  J. Appl. Phys. 99
  
  Pages: 13512-13515
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊融液の密度測定2006
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  日本マイクログラビティ応用学会誌 23巻・1号
  
  Pages: 26-29
- NAID
  10017253810
- Data Source
  KAKENHI-PROJECT-16360320
[Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006
- Author(s)
  K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
- Journal Title
  
  Jpn.J.Appl.Phys. 45
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006
- Author(s)
  K.Nagashio, K, Kuribayashi
- Journal Title
  
  Acta materialia 54
  
  Pages: 2353-2360
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊液滴の密度測定2006
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  日本マイクログラビティ応用学会誌 23
  
  Pages: 26-29
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006
- Author(s)
  K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
- Journal Title
  
  Appl. Phys. Lett. 89
  
  Pages: 241923-241923
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006
- Author(s)
  K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
- Journal Title
  
  Appl. Phys. Lett. 89
  
  Pages: 241923-241923
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta mater. 54
  
  Pages: 2353-2360
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006
- Author(s)
  L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
- Journal Title
  
  J.Appl.Phys. 99
  
  Pages: 13512-5
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006
- Author(s)
  M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J.Crystal Growth 294
  
  Pages: 16-21
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊液滴の密度測定2006
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  日本マイクログラビティ応用学会誌 23
  
  Pages: 26-29
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Spherical silicon crystal formed by semisolid process in drop tube2006
- Author(s)
  K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, I. Jimbo
- Journal Title
  
  Japanese Journal of Applied Physics, Part 2: Letters 45
- NAID
  10017653177
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006
- Author(s)
  K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
- Journal Title
  
  Jpn. J. Appl. Phys. 45
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta Materialia 54
  
  Pages: 2353-2360
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Formation of metastable rare-earth iron garnet by splat quenching2006
- Author(s)
  K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
- Journal Title
  
  J. Am. Ceram. Soc. 89
  
  Pages: 1504-1509
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006
- Author(s)
  K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J. Appl. Phys. 100
  
  Pages: 33524-33524
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>Bi_1 melts solidified on an electrostatic levitator and an electromagnetic levitator2006
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Acta mater. 54
  
  Pages: 3791-3799
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006
- Author(s)
  L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
- Journal Title
  
  J. Appl. Phys. 99
  
  Pages: 13512-13515
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Measuring equipment for thermopysical properties of droplet electromagnetically-levitated under axial static magnetic field2006
- Author(s)
  Fumitomo Onishi, Kosuke Nagashio, Yuko Inatomi, Kazuhiko Kuribayashi
- Journal Title
  
  56th International Astronautical Congress Final Program
- Data Source
  KAKENHI-PROJECT-16360320
[Journal Article] Formation of metastable rare-rarth iron garnet by splat quenching2006
- Author(s)
  K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
- Journal Title
  
  J.Am.Ceram.Soc. 89
  
  Pages: 1504-1509
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006
- Author(s)
  M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J. Crystal Growth 294
  
  Pages: 16-21
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006
- Author(s)
  K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
- Journal Title
  
  J.Appl.Phys. 100
  
  Pages: 33524-33524
- Data Source
  KAKENHI-PROJECT-18206077
[Journal Article] Formation of metastable rare-earth iron garnet by splat quenching2006
- Author(s)
  K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
- Journal Title
  
  J. Am. Ceram. Soc. 89
  
  Pages: 1504-1509
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Fragmentation of faceted dendrite in solidification of undercooled B-doped Si melts2005
- Author(s)
  K.Nagashio, H.Okamoto, K.Kuribayashi, I.Jimbo.
- Journal Title
  
  Metallurgical and Materials Transaction A 36
  
  Pages: 3407-3413
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005
- Author(s)
  Nagashio, K., Kuribayashi, K.
- Journal Title
  
  Acta mater. 53
  
  Pages: 3021-3029
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2005
- Author(s)
  Nagashio, K., Okamoto, H., Kuribayashi, K., Jinbo, I.
- Journal Title
  
  Metall.Mater.Trans.A. 36A
  
  Pages: 3407-3413
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>Bl Melts Processed on an Electrostatic Levitator2005
- Author(s)
  Li, M., Ishikawa, T., Nagashio, K., Kuribayashi, K.Yoda, S.
- Journal Title
  
  Metall.Mater.Trans.A. 36A
  
  Pages: 3254-3257
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005
- Author(s)
  Li, M., Nagashio, K., Ishikawa, T., Yoda, S., Kuribayashi, K.
- Journal Title
  
  Acta mater. 53
  
  Pages: 731-741
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] 静磁場におけるSi浮遊融液の熱膨張率と熱伝導率の測定2005
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  日本金属学会講演概要
  
  Pages: 269-269
- Data Source
  KAKENHI-PROJECT-16360320
[Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta materialia 53
  
  Pages: 3021-3029
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta materialia 53
  
  Pages: 3021-3029
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] 過冷融液からのファセットSiのデンドライト成長-球状単結晶育成へ向けて-2005
- Author(s)
  長汐晃輔, 栗林一彦
- Journal Title
  
  日本結晶成長学会誌 23
  
  Pages: 314-324
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005
- Author(s)
  Li, M., Nagashio, K., Ishikawa, T., Yoda, S., Kuribayashi, K.
- Journal Title
  
  Acta mater. 53
  
  Pages: 731-741
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005
- Author(s)
  Nagashio, K., Kuribayashi, K.
- Journal Title
  
  Acta mater. 53
  
  Pages: 3021-3029
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2005
- Author(s)
  Nagashio, K., Okamoto, H., Kuribayashi, K., Jinbo, I.
- Journal Title
  
  Metall.Mater.Trans.A. 36A
  
  Pages: 3407-3413
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] Fragmentation of faceted dendrite in solidification of undercooled B-doped Si melts2005
- Author(s)
  K.Nagashio, H.Okamoto, K.Kuribayashi, I.Jimbo.
- Journal Title
  
  Metallurgical and Materials Transaction A 36
  
  Pages: 3407-3413
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] シリコン浮遊融液の熱伝導率測定2005
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  日本熱物性シンポジウム講演論文集
  
  Pages: 475-477
- Data Source
  KAKENHI-PROJECT-16360320
[Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_99B_1 Melts Processed on an Electrostatic Levitator2005
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Metallurgical and Materials Transaction A 36A
  
  Pages: 3254-3257
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>B_1 Melts Processed on an Electrostatic Levitator2005
- Author(s)
  M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
- Journal Title
  
  Metallurgical and Materials Transaction A 36A
  
  Pages: 3254-3257
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005
- Author(s)
  M.Li, K Nagashio, T.Ishikawa, S.Yoda, K.Kuribayashi
- Journal Title
  
  Acta Materialia 53
  
  Pages: 731-741
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>B1 Melts Processed on an Electrostatic Levitator2005
- Author(s)
  Li, M., Ishikawa, T., Nagashio, K., Kuribayashi, K.Yoda, S.
- Journal Title
  
  Metall.Mater.Trans.A. 36A
  
  Pages: 3254-3257
- Data Source
  KAKENHI-PROJECT-17686063
[Journal Article] 過冷融液からのファセットSiのデンドライト成長-球状単結晶育成へ向けて-2005
- Author(s)
  長汐晃輔, 栗林一彦
- Journal Title
  
  日本結晶成長学会誌 23
  
  Pages: 314-324
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004
- Author(s)
  K.Nagashio, H.Murata, K.Kuribayashi
- Journal Title
  
  Acta Materialia 52
  
  Pages: 5295-5301
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004
- Author(s)
  Nagashio, K., Murata, H., Kuribayashi, K.
- Journal Title
  
  Acta Mater. 52
  
  Pages: 5295-5301
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Phase selection in undercooled Y_3Al_5O_<12> melt2004
- Author(s)
  Nagashio, K.Sasaki, J., Kuribayashi, K.
- Journal Title
  
  Mater.Trans. 45
  
  Pages: 2723-2727
- NAID
  10013474735
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] 静磁場における電磁浮遊融液のその場観察2004
- Author(s)
  大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
- Journal Title
  
  第25回日本熱物性シンポジウム講演論文集
  
  Pages: 186-188
- Data Source
  KAKENHI-PROJECT-16360320
[Journal Article] Correlation between dislocation etch pits and optical absorption in CdGeAs_22004
- Author(s)
  Nagashio, K., et al.
- Journal Title
  
  J.Crystal Growth 269
  
  Pages: 195-206
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Phase selection in undercooled Y_3AI_5O_12 melt2004
- Author(s)
  K.Nagashio, J.Sasaki, K.Kuribayashi
- Journal Title
  
  Materials Transaction 45
  
  Pages: 2723-2727
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melts2004
- Author(s)
  M.Li, K.Nagashio, K.Kuribayashi
- Journal Title
  
  Materials Science and Engineering A 373-377
  
  Pages: 528-533
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Fiber growth of near stoichiometric LiNbO_3 single crystal by laser heated pedestal growth method2004
- Author(s)
  Nagashio, K., et al.
- Journal Title
  
  J.Crystal Growth 265
  
  Pages: 190-197
- Data Source
  KAKENHI-PROJECT-16656231
[Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melt2004
- Author(s)
  M.Li, K.Nagashio, K.Kuribayashi
- Journal Title
  
  Mat.Sci.Eng.A 375-377
  
  Pages: 528-533
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004
- Author(s)
  K.Nagashio, H, Murata, K.Kuribayashi
- Journal Title
  
  Acta materialia 52
  
  Pages: 5295-5301
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Phase selection in undercooled Y_3Al_50_<12> melt2004
- Author(s)
  K.Nagashio, J.Sasaki, K.Kuribayashi
- Journal Title
  
  Materials Transactions 45
  
  Pages: 2723-2727
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melt2004
- Author(s)
  M.Li, K.Nagashio, K.Kuribayashi
- Journal Title
  
  Mat. Sci. Eng. A 375-377
  
  Pages: 528-533
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Phase selection in undercooled Y_3Al_5O_<12> melt2004
- Author(s)
  K.Nagashioa J.Sasaki, K.Kuribayashi
- Journal Title
  
  Materials Transaction 45
  
  Pages: 2723-2727
- NAID
  10013474735
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Containerless solidification of highly undercooled Al_20_3-ZrO_2 eutectic melts on an aero-acoustic levitator2003
- Author(s)
  M.Li, K.Nagashio, K.Kuribayashi
- Journal Title
  
  Crystal Growth 249
  
  Pages: 625-633
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Containerless solidification and net shaping by splat quenching of undercooled Nd_2Fe_14B melts2003
- Author(s)
  K.Nagashio, M.Li, K.Kuribayashi.
- Journal Title
  
  Materials Transaction 44
  
  Pages: 853-860
- NAID
  10011911588
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Nucleation behaviour and anomalous eutectic formation in highly undercooled Fe_2O_3-La_2O_3 eutectic melts2003
- Author(s)
  M.Li, K.Nagashio, K.Kuribayashi
- Journal Title
  
  Philosophical Magazine 83
  
  Pages: 1095-1109
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Containerless solidification and net shaping by splat quenching of undercooled Nd_2Fe_<14>B melts2003
- Author(s)
  K.Nagashio, M.Li, K.Kuribayashi
- Journal Title
  
  Materials Transactions 44
  
  Pages: 853-860
- NAID
  10011911588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta materialia (in press)
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Formation of Metastable Rare-Earth Iron Garnet by Splat Quenching
- Author(s)
  K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
- Journal Title
  
  Journal of American Ceramic Society (in press)
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Experimental verification of ribbon formation process in chill-block melt Spinning
- Author(s)
  K.Nagashio, K.Kuribayashi
- Journal Title
  
  Acta materialia (in press)
- Data Source
  KAKENHI-PROJECT-17656241
[Journal Article] Novel criterion for formation of metastable phase from undercooled melt
- Author(s)
  K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
- Journal Title
  
  Mat.Sci.Eng.A (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] DOS-limited contact resistance in graphene FETs
- Author(s)
  K.Nagashio, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys. in press.
- Data Source
  KAKENHI-PROJECT-21710136
[Journal Article] Formation of Metastable Rare-Earth Iron Garnet by Splat Quenching
- Author(s)
  K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
- Journal Title
  
  Journal of American Ceramic Society (in press)
- Data Source
  KAKENHI-PROJECT-15206081
[Journal Article] Novel criterion for formation ofmetastable phase from undercooled melt
- Author(s)
  K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
- Journal Title
  
  Mat. Sci. Eng. A (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Patent] 球状シリコン単結晶の製造方法及び装置2008
- Inventor(s)
  長汐晃輔, 栗林一彦, 岡本英樹
- Industrial Property Rights Holder
  独立行政法人宇宙航空研究開発機構
- Acquisition Date
  2008-06-20
- Data Source
  KAKENHI-PROJECT-18206077
[Patent] 球状シリコン結晶の製造方法2008
- Inventor(s)
  栗林一彦, 長汐晃輔, 安藤等
- Industrial Property Rights Holder
  独立行政法人宇宙航空研究開発機構
- Industrial Property Number
  2008-021319
- Filing Date
  2008-01-31
- Data Source
  KAKENHI-PROJECT-18206077
[Patent] 球状シリコン単結晶の製造方法及び装置2005
- Inventor(s)
  長汐晃輔, 栗林一彦, 岡本英樹
- Industrial Property Rights Holder
  宇宙航空研究開発機構
- Industrial Property Number
  2005-293807
- Filing Date
  2005-10-06
- Data Source
  KAKENHI-PROJECT-17656241
[Patent] 球状シリコン単結晶の製造方法及び装置2005
- Inventor(s)
  長汐晃輔, 栗林一彦, 岡本英樹
- Industrial Property Rights Holder
  宇宙航空研究開発機構
- Industrial Property Number
  2005-293807
- Filing Date
  2005-10-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206081
[Patent] ガーネット組成物の製造方法2005
- Inventor(s)
  長汐晃輔, 栗林一彦, 日比谷孟俊, 山口沖枝
- Industrial Property Rights Holder
  独立行政法人宇宙航空研究開発機構
- Industrial Property Number
  2005-090733
- Filing Date
  2005-03-28
- Data Source
  KAKENHI-PROJECT-16656231
[Patent] 球状シリコン単結晶の製造方法及び装置2005
- Inventor(s)
  長汐晃輔, 栗林一彦, 岡本英樹
- Industrial Property Rights Holder
  宇宙航空研究開発機構
- Industrial Property Number
  2005-293807
- Filing Date
  2005-10-06
- Data Source
  KAKENHI-PROJECT-15206081
[Presentation] " 2次元層状強誘電SnSにおけるバルク光起電力効果",2024
- Author(s)
  長汐晃輔
- Organizer
  Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-27)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] " 2次元層状材料トランジスタの発表から約10年ー課題と将来展望ー",2024
- Author(s)
  長汐晃輔
- Organizer
  日本学術振興会 R031　ハイブリッド量子ナノ技術委員会第14回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] 2次元層状強誘電SnSにおけるバルク光起電力効果2024
- Author(s)
  長汐晃輔
- Organizer
  Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-27)
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 2次元層状材料トランジスタの発表から約10年ー課題と将来展望ー2024
- Author(s)
  長汐晃輔
- Organizer
  日本学術振興会 R031　ハイブリッド量子ナノ技術委員会第14回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Shift current photovoltaics in ferroelectric SnS2023
- Author(s)
  Kosuke Nagashio
- Organizer
  International Conference on Materials and Systems for Sustainability 2023 (ICMaSS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 2次元層状材料トランジスタの発表から約10年2023
- Author(s)
  長汐晃輔
- Organizer
  第2回 NanoHubシンポジウム
- Invited
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting2023
- Author(s)
  Kosuke Nagashio
- Organizer
  3rd Nucleation and Growth Research Conference (NGRC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] “2D layered semiconductors: Challenge & Perspective”2023
- Author(s)
  Kosuke Nagashio
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] Shift current photovoltaics in ferroelectric SnS2023
- Author(s)
  長汐晃輔
- Organizer
  International Conference on Materials and Systems for Sustainability 2023(ICMaSS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] “Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting”2023
- Author(s)
  Kosuke Nagashio
- Organizer
  3rd Nucleation and Growth Research Conference (NGRC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] 2D layered semiconductors: Challenge & Perspective2023
- Author(s)
  Kosuke Nagashio
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective2023
- Author(s)
  Kosuke Nagashio
- Organizer
  2023 Symposia on VLSI Technology and Circuits
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] 2D layered semiconductors: Challenge & Perspective2023
- Author(s)
  Kosuke Nagashio
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective2023
- Author(s)
  Kosuke Nagashio
- Organizer
  2023 Symposia on VLSI Technology and Circuits
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Inversion Symmetry Broken Bulk SnS Formed by Step-edge-induced Spiral Growth for Energy Harvesting2023
- Author(s)
  Kosuke Nagashio
- Organizer
  3rd Nucleation and Growth Research Conference (NGRC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] 二次元原子層材料デバイスの現状課題と開発展望2023
- Author(s)
  長汐晃輔
- Organizer
  2023年電子情報通信学会シリコン材料・デバイス研究会
- Invited
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] “Shift current photovoltaics in ferroelectric SnS”2023
- Author(s)
  Kosuke Nagashio
- Organizer
  International Conference on Materials and Systems for Sustainability 2023(ICMaSS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] Device Technology for 2D Layered Semiconductor FETs: Challenge & Perspective2023
- Author(s)
  Kosuke Nagashio
- Organizer
  2023 Symposia on VLSI Technology and Circuits
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] MoS2FETから10年：何が解決して何が未解決なのか？2022
- Author(s)
  長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 2D メモリデバイス超高速動作の物理的起源（講演奨励賞受賞講演）2022
- Author(s)
  佐々木太郎、上野啓司、谷口尚、渡邉賢司、西村知紀、長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 1-nm EOTの実現に向けた高誘電率絶縁膜Er2O3を用いたトップゲート型2次元材料電界効果トランジスタの創製（注目講演）2022
- Author(s)
  内山晴貴、西村知紀、長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Ultrafast memory operation in 2D heterostructured non-volatile memory device2022
- Author(s)
  Kosuke Nagashio
- Organizer
  The 22nd Int. Conf. on Sci & Appl. of Nanotubes and Low-dimensional Materials (NT22)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Novel high-k insulator deposition on 2D materials for future electronics2022
- Author(s)
  Kosuke Nagashio
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] “Novel high-k insulator deposition on 2D materials for future electronics”,2022
- Author(s)
  Kosuke Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] WSe2の p型動作に向けた Au/Bi薄膜の仕事関数変調効果2022
- Author(s)
  中島隆一、西村知紀、上野啓司、長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] “50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”2022
- Author(s)
  K. Nagashio,
- Organizer
  241st ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] 2次元層状物質の新機能デバイスへの展開2022
- Author(s)
  長汐晃輔
- Organizer
  光電相互変換第125委員会第260回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 2次元層状物質の新機能デバイスへの展開2022
- Author(s)
  長汐晃輔
- Organizer
  電子デバイス界面テクノロジー研究会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Characterization of single-crystalline carbon-doped h-BN/metal contact for current injection2022
- Author(s)
  Supawan Ngamprapawat、Tomonori Nishimura、Kenji Watanabe、Takashi Taniguchi、Kosuke Nagashio
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 金属/Si界面のフェルミレベルピンニング機構の理解に向けた残渣フリーの大面積グラフェン転写2022
- Author(s)
  西村知紀、中島隆一、張益仁、内山晴貴、長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 光電流測定によるバルクPdSe2のバンドギャップ値評価と光応答機構の考察2022
- Author(s)
  西山航、西村知紀、西岡政雄、上野啓司、岩本敏、長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] 2次元層状物質の新機能デバイスへの展開2022
- Author(s)
  長汐晃輔
- Organizer
  光電相互変換第125委員会第260回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] ２次元層状SnSの強誘電特性と自発起電力発電への展開2022
- Author(s)
  長汐晃輔
- Organizer
  日本セラミックス協会第35回秋季シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] ステップ端誘起スパイラル成長による空間反転対称性の破れたバルクSnS形成2022
- Author(s)
  張益仁、名苗遼、篠北啓介、松田一成、長汐晃輔
- Organizer
  2022年第170回日本金属学会講演大会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] ２次元層状SnSの強誘電特性と自発起電力発電への展開2022
- Author(s)
  長汐晃輔
- Organizer
  日本セラミックス協会第35回秋季シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] MoS2 FETから10年：何が解決して何が未解決なのか？2022
- Author(s)
  長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] グラフェン&2Dデバイスの現状と将来展望2022
- Author(s)
  長汐晃輔
- Organizer
  システムデバイスロードマップ委員会2021年度第5回BC, MtM合同委員会
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Novel high-k insulator deposition on 2D materials for future electronics2022
- Author(s)
  Kosuke Nagashio
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] 超高速 2D フラッシュメモリーの実証2022
- Author(s)
  長汐晃輔
- Organizer
  第86回半導体・集積回路技術シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] 50 Ns ultrafast memory operation in 2D heterostructured non-volatile memory device2022
- Author(s)
  Kosuke Nagashio
- Organizer
  241st ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] Consider the S vacancy formation in MoS22022
- Author(s)
  Kosuke Nagashio
- Organizer
  A3 Foresight International Symposium 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] “Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device”,2022
- Author(s)
  K. Nagashio,
- Organizer
  The 22nd Int. Conf. on Sci & Appl. of Nanotubes and Low-dimensional Materials (NT22)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] 超高速 2Dフラッシュメモリーの実証2022
- Author(s)
  長汐晃輔
- Organizer
  第86回半導体・集積回路技術シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] MoS2 FETから10年：何が解決して何が未解決なのか？2022
- Author(s)
  長汐晃輔
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] Consider the S vacancy formation in MoS22022
- Author(s)
  Kosuke Nagashio
- Organizer
  A3 Foresight International Symposium 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-21H05232
[Presentation] High temperature stability of MoS2 probed by combining thermal desorption spectroscopy and atomic layer deposition2022
- Author(s)
  Li Shuhong、Tomonori Nishimura、Mina, Maruyama、Susumu Okada、Kosuke Nagashio
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-21H05237
[Presentation] “Consider the S vacancy formation in MoS2”,2022
- Author(s)
  Kosuke Nagashio,
- Organizer
  A3 Foresight International Symposium 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H04957
[Presentation] "All 2D Heterostructure Tunnel Field Effect Transistors"2021
- Author(s)
  K. Nagashio
- Organizer
  5th IEEE Electron Devices Technology and Manufacturing conference 2021 (EDTM), (April, 9, 2021, Chengdu, China, Online). "
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "次元層状物質の新機能デバイスへの展開”2021
- Author(s)
  長汐晃輔
- Organizer
  グラフェンコンソーシアム第26回研究講演会，(2021年8月3日, オンライン開催)．
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Two-dimensional tunnel FET"2021
- Author(s)
  K. Nagashio
- Organizer
  International Conference on Materials and Systems for Sustainability (ICMaSS),(Nov. 5th, Online, 2021).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2D layered semiconductors: Challenge & Perspective"2021
- Author(s)
  K. Nagashio
- Organizer
  2021 International Symposium n VLSI Technology, System and Applications (VLSI-TSA), (April, 21, Hsinchu,Taiwan, Online).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] " Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of PVD SnS”2021
- Author(s)
  Yih-Ren Chang, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio "
- Organizer
  2021 virtual Materials Research Society (MRS) spring meeting, (April, 19, 2021, online).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "High performance SnS/h-BN heterostructure p-FET via Ti contact reaction"2021
- Author(s)
  Yih-Ren Chang, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio "
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "50 ns Ultrafast P/E Operation in 2D Heterostructured Non-Volatile Memory Device"2021
- Author(s)
  Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura,Kosuke Nagashio "
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Qualitative Judgement of Inconsistent Band Gap Values for Bulk PdSe2 from Electrical Transport Properties"2021
- Author(s)
  Wataru Nishiyama, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "MoS2 同一結晶面内ヘテロを利用した単一ゲート TFET の動作実証"2021
- Author(s)
  福井智博, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Current injection into single-crystalline carbon-doped h-BN",2021
- Author(s)
  "Supawan Ngamprapawat, Takashi Taniguchi,Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月12日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "巨大シュタルク効果による2次元材料電界効果トランジスタの移動度変調"2021
- Author(s)
  "内山晴貴, 丸山実那, 岡田晋, 西村知紀, 長汐晃輔 "
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Thermodynamics perspective to surface oxide amelioration in 2D devices",2021
- Author(s)
  YihRen Chang, Tomonori Nishimura,Kosuke Nagashio
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "高速パルス電圧ストレス下におけるh-BNの強靭な絶縁破壊耐性による2Dメモリデバイスの超高速動作"2021
- Author(s)
  佐々木太郎, 上野啓司, 谷口尚, 渡邉賢司, 西村知紀, 長汐晃輔
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催). "
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] ”2次元層状物質のデバイス応用の現状と将来展望”2021
- Author(s)
  長汐晃輔
- Organizer
  化学工学会エレクトロニクス部会先端技術シンポジウム，(2021年12月7日, オンライン開催)．
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] Room temperature in-plane ferroelectricity in SnS2021
- Author(s)
  K. Nagashio
- Organizer
  International Microprocesses and Nanotechnology Conference (MNC2021),(Oct. 27th, Online, 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] Polarity transition from n-type to p-type WS2 FET by controlling Schottky barrier2021
- Author(s)
  R. Kato, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "バルクPdSe2 のバンドギャップ値に対する電気伝導特性からの定量的評価",2021
- Author(s)
  西山航, 上野啓司, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔
- Organizer
  2021年第82回応用物理学会秋季学術講演会, (2021年9月11日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] ”２次元電子デバイス”，2020
- Author(s)
  長汐晃輔，
- Organizer
  応用物理学会東海支部55周年記念講演，東海ニューフロンティアリサーチワークショップ，(2020年12月-1月，online on-demand)．
- Invited
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "YSZ極薄膜の高温インピーダンス解析",2020
- Author(s)
  西村知紀, 小島俊哉, 長汐晃輔, 丹羽正昭,
- Organizer
  2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学（東京都千代田区)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Carrier Density of Apparently Degenerated PtS2 Determined by Hall Measurement",2020
- Author(s)
  Yuichiro Sato, Keiji Ueno, Tomonori Nishimura, Kosuke Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2020, All-VIRTUAL conference).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Interface engineering for 2D laVirtual MRS Syered semiconductors",2020
- Author(s)
  K. Nagashio,
- Organizer
  2020 pring/Fall meeting, (Nov./Dec. 2020, online, USA).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] Atomic step induced spiral growth in PVD SnS,2020
- Author(s)
  YihRen Chang, Naoki Higashitarumizu, Hayami Kawamoto, Tomonori Nishimura, Kosuke Nagashio,
- Organizer
  2020年第81回応用物理学会秋季学術講演会, (2020年9月10日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Screw dislocation driven spiral growth in SnS initiated by atomic graphene steps",2020
- Author(s)
  Yih-Ren Chang, Naoki Higashitarumizu, Hayami Kawamoto, Fu-Hsien Chu, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2020, All-VIRTUAL conference).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage",2020
- Author(s)
  Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio,
- Organizer
  International Conference on Solid State Devices and ypMaterials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] 浮遊ゲート電位（VFG）のトラジェクトリを用いた2Dメモリデバイスの動作理解,2020
- Author(s)
  佐々木太郎, 上野啓司, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔,
- Organizer
  2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] CVD-2層グラフェンのh-BNヘテロFET動作解析による結晶性評価,2020
- Author(s)
  西山航, Solis-Fernandez Pablo, 寺尾友里, 河原憲治, 吾郷浩樹, 西村知紀, 長汐晃輔,
- Organizer
  2020年第81回応用物理学会秋季学術講演会, (2020年9月9日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "p+-MoS2/n-MoS2 2D-TFETにおける60 mV/dec以下のS.S.実現",2020
- Author(s)
  中村圭吾, 永村直佳, 上野啓司, 谷口尚, 渡邊賢司, 長汐晃輔,
- Organizer
  2020年第67回応用物理学会春季学術講演会, (2020年3月13日, 上智大学（東京都千代田区)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Experimental Demonstration of In-Plane Ferroelectricity in SnS Down to Monolayer",2020
- Author(s)
  N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B.-H. Lin, F.-H. Chu, I. Yonemori, T. Nishimura, K. Wakabayashi, W.-H. Chang, K. Nagashio,t.
- Organizer
  2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] ”２次元電子デバイス”，2020
- Author(s)
  長汐晃輔，
- Organizer
  応用物理学会東海支部55周年記念講演，東海ニューフロンティアリサーチワークショップ，(2020年12月-1月，online on-demand)．
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Understanding the device operation of ambipolar channel based 2D memory devices by trajectory of floating gate voltage",2020
- Author(s)
  T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio,
- Organizer
  78th Device Research Conference, (June 23, 2020, Online).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "浮遊ゲート電位の測定による2Dメモリデバイス動作の理解",2020
- Author(s)
  佐々木太郎, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔,
- Organizer
  2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学（東京都千代田区)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2次元材料の電子デバイス応用",2020
- Author(s)
  長汐晃輔,
- Organizer
  FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
- Invited
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET",2020
- Author(s)
  K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, Kosuke Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps",2020
- Author(s)
  YihRen Chang, Hayami Kawamoto, Naoki Higashitarumizu, Tomonori Nishimura, Kosuke Nagashio,
- Organizer
  2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学（東京都千代田区))
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] 完全2次元ヘテロTFETによる室温での60mV/dec以下のSS実現,2020
- Author(s)
  中村圭吾, 永村直佳, 上野啓司, 谷口尚, 渡邊賢司, 長汐晃輔,
- Organizer
  2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] 浮遊ゲート電位の測定による2DメモリデバイスのMemory window過大評価の理解,2020
- Author(s)
  佐々木太郎, 上野啓司, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔,
- Organizer
  2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] 完全AB積層した二層グラフェンのCVD成長2020
- Author(s)
  P. Solis-Fernandez, 寺尾友里, 河原憲治，長汐晃輔, Y.-C. Lin, 山本圭介, 中島寛, 日比野浩樹, 末永和知, 吾郷浩樹
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03864
[Presentation] Isothermal growth and stacking evolution of highly uniform AB-stacked bilayer graphene2020
- Author(s)
  P. Solis-Fernandez, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Lin, K. Yamamoto,H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, H. Ago
- Organizer
  第59回FNTG総合シンポジウム
- Data Source
  KAKENHI-PROJECT-18H03864
[Presentation] "層状マイカ基板上の 2 次元ピエゾ材料を用いたナノ発電素子",2020
- Author(s)
  東垂水直樹, 川元颯巳, 梅田雅也, 北浦良, 長汐晃輔,
- Organizer
  [講演奨励賞受賞記念講演] 2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学（東京都千代田区)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Interface engineering for 2D layered semiconductors",2020
- Author(s)
  K. Nagashio,
- Organizer
  2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2次元材料の電子デバイス応用",2020
- Author(s)
  長汐晃輔,
- Organizer
  FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Ferroelectricity in monolayer SnS",2019
- Author(s)
  K. Nagashio,
- Organizer
  JSPS/EPSRC C2C meeting, (Nov. 22, 2019, Tohoku univ., Sendai)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Full energy spectra of interface states density for n- and p-type MoS2 field effect transistors2019
- Author(s)
  K. Nagashio,
- Organizer
  Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "How to understand interface properties in 2D heterostructure FETs",2019
- Author(s)
  K. Nagashio,
- Organizer
  2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] Synthesis of AB-stacked bilayer graphene on Cu-Ni films2019
- Author(s)
  P. Solis-Fernandez, Y. Terao, Y. Takesaki, K. Kawahara, K. Suenaga, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, H. Ago
- Organizer
  九大2D物質研究会
- Data Source
  KAKENHI-PROJECT-18H03864
[Presentation] "2次元層状トランジスタの界面の理解と制御",2019
- Author(s)
  長汐晃輔,
- Organizer
  2019年電子情報通信学会シリコン材料・デバイス研究会 ,（2019年10月7日, 機械振興会館 (東京)).
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "All solid-state 2D tunnel FET",2019
- Author(s)
  K. Nagashio,
- Organizer
  Compound semiconductor week 2019 (CSW2019), (May 19-23, 2019, Kasugano International Forum, Nara, Japan).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Understanding interface properties in 2D heterostructure FETs"2019
- Author(s)
  K. Nagashio,
- Organizer
  2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "Understanding interface properties in 2D heterostructure FETs"2019
- Author(s)
  K. Nagashio,
- Organizer
  2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Full energy spectra of interface states density for n and p-type MoS2 field effect transistors",2019
- Author(s)
  K. Nagashio,
- Organizer
  Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "Electromechanical Response of Few-to-monolayer SnS PVD-grown on Flexible Mica",2019
- Author(s)
  N. Higashitarumizu, H. Kawamoto, K. Nagashio,
- Organizer
  2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] ”2次元層状SnSの室温強誘電特性",2019
- Author(s)
  東垂水直樹, 川元颯巳, 西村知紀, 張文豪, 長汐晃輔",
- Organizer
  2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2D layered semiconductors",2019
- Author(s)
  K. Nagashio,
- Organizer
  7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "2D layered semiconductors",2019
- Author(s)
  K. Nagashio,
- Organizer
  7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "中心対称性の破れた2次元層状物質の圧電特性",2019
- Author(s)
  東垂水直樹, 川元颯巳, 梅田雅也, 北浦良, 長汐晃輔,
- Organizer
  2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "How to understand interface properties in 2D heterostructure FETs",2019
- Author(s)
  K. Nagashio,
- Organizer
  2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "2次元層状SnSの圧電・強誘電特性",2019
- Author(s)
  長汐晃輔,
- Organizer
  第23回VBLシンポジウム ,（2019年10月6日, 名古屋大学 (愛知)).
- Invited
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2D heterostructure FETs",2019
- Author(s)
  K. Nagashio,
- Organizer
  PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "2次元層状SnSの圧電・強誘電特性",2019
- Author(s)
  長汐晃輔,
- Organizer
  第23回VBLシンポジウム ,（2019年10月6日, 名古屋大学 (愛知)).
- Invited
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”,2019
- Author(s)
  K. Nagashio, K. Taniguchi, and N. Fang,
- Organizer
  Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "PVD growth of monolayer SnS under S-rich condition toward piezoelectric application",2019
- Author(s)
  H. Kawamoto, N. Higashitarumizu, M. Nakamura, I. Yonemori, K. Wakabayashi, K. Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2D heterostructure FETs",2019
- Author(s)
  K. Nagashio,
- Organizer
  PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor",2019
- Author(s)
  Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio,
- Organizer
  2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications",2019
- Author(s)
  N. Higashitarumizu, H. Kawamoto, K. Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "2次元層状トランジスタの界面の理解と制御",2019
- Author(s)
  長汐晃輔,
- Organizer
  2019年電子情報通信学会シリコン材料・デバイス研究会 ,（2019年10月7日, 機械振興会館 (東京)).
- Invited
- Data Source
  KAKENHI-PROJECT-19K21956
[Presentation] "MoS2/h-BN/Graphite積層構造による不揮発性メモリデバイスの動作解析",2019
- Author(s)
  佐々木太郎, 谷口尚, 渡邊賢司, 西村知紀, 長汐晃輔,
- Organizer
  2019年第80回応用物理学会秋季学術講演会,（2019年9月20日, 北海道大学(札幌市)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”,2019
- Author(s)
  T. Uwanno, T. Taniguchi, K. Watanabe, K. Nagashio,
- Organizer
  Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "388 K High Temperature Retention Study of 2D Hetero-stack Based Non- Volatile Memory",2019
- Author(s)
  T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "PtS2/WSe2によるp型2D-TFETにおけるBTBT電流の観測",2019
- Author(s)
  佐藤雄一朗，中村圭吾，上野啓司，長汐晃輔,
- Organizer
  2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] "Band Alignment in Charge- Transfer-Type p+-WSe2/MoS2 Tunnel FET",2019
- Author(s)
  K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00755
[Presentation] Selective growth of AB-stacked bilayer graphene2018
- Author(s)
  寺尾友里，河原憲治, 末永健志朗, 山本圭介, 中島寛, 長汐晃輔, 日比野浩樹, 吾郷浩樹
- Organizer
  第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Data Source
  KAKENHI-PROJECT-15H03530
[Presentation] "Interface engineering for 2D layered semiconductors"2018
- Author(s)
  K. Nagashio,
- Organizer
  UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Interface engineering for 2D layered semiconductors2018
- Author(s)
  K. Nagashio
- Organizer
  UMRS-ICEM2018, (August, 23, 2018, Daejeon, Korea).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "High-k Er2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation",2018
- Author(s)
  K. Maruyama, K. Nagashio.
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Interface Traps“Extrinsically” Deliver MIT in Monolayer MoS2 FET",2018
- Author(s)
  N. Fang, K. Nagashio
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 12, 2018, Univ. of Tokyo, Tokyo)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Electrically inert interface in 2D heterostructure FETs"2018
- Author(s)
  K. Nagashio,
- Organizer
  3rd Japan-EU flagship workshop on graphene and related 2D materials, (2018, Nov. 19, Sendai, Japan.)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Electrically Inert Interface in 2D Heterostructure FETs"2018
- Author(s)
  K. Nagashio,
- Organizer
  Workshop on innovative nanoscale devices and systems (WINDS2018), (Nov. 28, 2018, The Westin Hapuna Beach Resort, Kohala, Hawaii, USA).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Understanding of layered heterointerfaces in 2D semiconductors"2018
- Author(s)
  [Invited] K. Nagashio
- Organizer
  10th anniversary international symposium on advanced Plasma science (ISPlamsa2018)、 (March, 5, 2018, Meijyo univ., Nagoya).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Purely AB-stacked bilayer graphene grown on Cu-Ni films2018
- Author(s)
  P. Solis-Fernandez, Y. Terao, K. Kawahara, K. Suenaga, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, H. Ago
- Organizer
  9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy and Environment
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03864
[Presentation] "Interface engineerign for 2D electronics",2018
- Author(s)
  K. Nagashio,
- Organizer
  Core to core program, (April, 16-17, 2018, Cambridge university, UK).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Fabrication and Surface Engineering of Two-dimensional SnS toward Piezoelectric Nanogenerator Application"2018
- Author(s)
  N. Higashitarumizu, H. Kawamoto, K. Ueno, K. Nagashio,
- Organizer
  2018 MRS Spring Meeting, (April, 4, 2018, Phoenix Convention Center, Phoenix, USA).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Interface engineering for 2D layered semiconductors"2018
- Author(s)
  N. Higashitarumizu, H. Kawamoto, K. Nagashio,
- Organizer
  UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Pinpoint pick up and bubble free transfer in 2D heterostructure fabrication"2018
- Author(s)
  K. Nagashio,
- Organizer
  JSPS/EPSRC C2C meeting, (Oct. 30, 2018, Tohoku univ., Sendai).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Electrically inert interface in 2D heterostructure FETs2018
- Author(s)
  K. Nagashio
- Organizer
  AWAD2018, (July, 3, 2018, Kitakyusyu, Japan).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET"2018
- Author(s)
  S. Toyoda, T. Taniguchi, K.Watanabe, K. Nagashio.
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Strongp-type SnS FETs: From Bulk to Monolayer",2018
- Author(s)
  N. Higashitarumizu, H. Kawamoto, K. Maruyama, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, K. Nagashio,
- Organizer
  International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] "Interface engineering for 2D electonics"2017
- Author(s)
  K. Nagashio
- Organizer
  2017 NEA Symposium of Emerging Materials Innovation, Lotte hotel, Soul, Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] 2次元原子膜応用のためのゲートスタック形成2017
- Author(s)
  長汐晃輔
- Organizer
  2017真空・表面科学合同講演会 (2017年8月17日，横浜市立大，(横浜市))
- Invited
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Interface engineering for 2D electonics2017
- Author(s)
  K. Nagashio
- Organizer
  Nippon-Taiwan Workshop
- Place of Presentation
  Kwansei Gakuin Univ. Sanda, Hyogo
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] [Invited] "Gap engineering and reliability study for 2Delectronics"2017
- Author(s)
  K. Nagashio
- Organizer
  6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] "Gap engineering and reliability study for 2Delectronics"2017
- Author(s)
  K. Nagashio
- Organizer
  6th Int. Conf. on Semiconductor Technology for ULSI & TFT, Schloss Hernstein, Hernstein, Austria
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Gap engineering and reliability study for 2Delectronics2017
- Author(s)
  K. Nagashio
- Organizer
  6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017
- Author(s)
  長汐晃輔
- Organizer
  応用電子物性分科会研究例会, 東工大，目黒区
- Invited
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Interface engineering for 2D electronics2017
- Author(s)
  K. Nagashio
- Organizer
  Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] "Interface engineering for 2D layered semiconductors"2017
- Author(s)
  K. Nagashio
- Organizer
  2017 PKU-UTokyo nano-carbon summer camp, Hongo, UTokyo
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] [12][招待講演] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017
- Author(s)
  長汐晃輔
- Organizer
  応用電子物性分科会研究例会, (2017年10月19日，東工大，(東京都目黒区)).
- Invited
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] 2次元層状チャネルFETの電子輸送特性及び界面特性2017
- Author(s)
  長汐晃輔
- Organizer
  応用電子物性分科会研究例会 (2017年10月19日，東工大，(東京都目黒区))
- Invited
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] グラフェンの伝導特性2017
- Author(s)
  長汐晃輔
- Organizer
  日本化学会第97春季年会「特別企画」二次元物質の科学
- Place of Presentation
  慶応大学, 神奈川
- Invited
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Interface engineering for 2D layered semiconductors2017
- Author(s)
  K. Nagashio
- Organizer
  2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] "2次元原子膜応用のためのゲートスタック形成"2017
- Author(s)
  長汐晃輔
- Organizer
  [招待講演] 2017真空・表面科学合同講演会, (2017年8月17日，横浜市立大，(横浜市)).
- Invited
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] 2次元原子層半導体における層状ヘテロ界面の理解と制御2017
- Author(s)
  長汐晃輔
- Organizer
  第36回電子材料シンポジウム, (2017年11月9日，長浜ロイヤルホテル，(滋賀県長浜市)).
- Invited
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] グラフェンの伝導特性2017
- Author(s)
  長汐晃輔
- Organizer
  日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年３月16日，慶応大学, 日吉, (神奈川)).
- Invited
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] [Invited] "Interface engineering for 2D electonics"2017
- Author(s)
  K. Nagashio
- Organizer
  2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Understanding of layered heterointerfaces in 2D semiconductors2017
- Author(s)
  K. Nagashio
- Organizer
  10th anniversary international symposium on advanced Plasma science (ISPlamsa2018), (March, 5, 2018, Meijyo univ., Nagoya).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] ２次元原子層半導体における層状ヘテロ界面の理解と制御2017
- Author(s)
  長汐晃輔
- Organizer
  第36回電子材料シンポジウム,長浜ロイヤルホテル
- Invited
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] グラフェンの伝導特性2017
- Author(s)
  長汐晃輔
- Organizer
  日本化学会第97春季年会「特別企画」二次元物質の科学
- Place of Presentation
  慶応大学, 日吉, 神奈川
- Invited
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] "2次元原子膜応用のためのゲートスタック形成"2017
- Author(s)
  長汐晃輔
- Organizer
  2017真空・表面科学合同講演会, 横浜市立大，横浜市
- Invited
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] [Invited]"Interface engineering for 2D electonics".2017
- Author(s)
  K. Nagashio,
- Organizer
  Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] [招待講演] "グラフェンの伝導特性"2017
- Author(s)
  長汐晃輔
- Organizer
  日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年３月16日，慶応大学, 日吉, ( 神奈川)).
- Invited
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Interface engineering for 2D electronics2017
- Author(s)
  K. Nagashio
- Organizer
  2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] [招待講演]２次元原子層半導体における層状ヘテロ界面の理解と制御,2017
- Author(s)
  長汐晃輔
- Organizer
  第36回電子材料シンポジウム, (2017年11月9日，長浜ロイヤルホテル，(滋賀県長浜市)).
- Invited
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Interface engineering for 2D electonics2017
- Author(s)
  K. Nagashio
- Organizer
  Nippon-Taiwan Workshop
- Place of Presentation
  Kwansei Gakuin Univ. Sanda, Hyogo
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] [Invited] "Interface engineering for 2D layered semiconductors"2017
- Author(s)
  K. Nagashio,
- Organizer
  2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Gap state analysis and reliability study on 2D electronics2016
- Author(s)
  K. Nagashio
- Organizer
  Core to core program
- Place of Presentation
  Cambridge university, UK
- Year and Date
  2016-07-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Reliability study on layered 2D insulator2016
- Author(s)
  K. Nagashio
- Organizer
  230th Electrochemical Society Meeting
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Reliability study on layered 2D insulator2016
- Author(s)
  K. Nagashio
- Organizer
  230th Electrochemical Society Meeting
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Dielectric breakdown of hexiagonal boronitride2016
- Author(s)
  K. Nagashio
- Organizer
  UTokyo-NTU joint conference at NUT 2016
- Place of Presentation
  NTU, Taiwan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Reliability study on layered 2D insulator2016
- Author(s)
  Kosuke Nagashio
- Organizer
  230th Electrochemical Society Meeting
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Gap state analysis and reliability study on 2D electronics2016
- Author(s)
  K. Nagashio
- Organizer
  Core to core program
- Place of Presentation
  Cambridge university,UK
- Year and Date
  2016-07-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Gap engineering & reliability study for 2D electronics2016
- Author(s)
  K. Nagashio
- Organizer
  Graphene week
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-06-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Ｄielectric breakdown of hexagonal Boron Nitride2016
- Author(s)
  Kosuke Nagashio
- Organizer
  GM-2016Graphene and related Materials: Properties and Applications
- Place of Presentation
  Paestum, Italy
- Year and Date
  2016-05-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Graphene transistor application2016
- Author(s)
  K. Nagashio
- Organizer
  Core to core program
- Place of Presentation
  Tohoku university, Sendai
- Year and Date
  2016-11-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Dielectric breakdown of hexagonal Boron Nitride2016
- Author(s)
  K. Nagashio
- Organizer
  International conference on graphene and related materials: properties and applications
- Place of Presentation
  Paestum, Italy
- Year and Date
  2016-05-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Gap engineering & reliability study for 2D electronics2016
- Author(s)
  Kosuke Nagashio
- Organizer
  Graphene week
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-06-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Dielectric breakdown of hexagonal Boron Nitride2016
- Author(s)
  K. Nagashio
- Organizer
  International conference on graphene and related materials: properties and applications
- Place of Presentation
  Paestum, Italy
- Year and Date
  2016-05-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] prograGraphene transistor applicationm2016
- Author(s)
  K. Nagashio
- Organizer
  Core to core
- Place of Presentation
  Tohoku university, Sendai
- Year and Date
  2016-11-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14446
[Presentation] Dielectric breakdown of hexiagonal boronitride2016
- Author(s)
  K. Nagashio
- Organizer
  UTokyo-NTU joint conference at NUT 2016
- Place of Presentation
  NTU, Taiwan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Gap engineering & reliability study for 2D electronics2016
- Author(s)
  K. Nagashio
- Organizer
  Graphene week
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-06-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04343
[Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015
- Author(s)
  K. Nagashio
- Organizer
  11th Topical workshop on Heterostructure Microelectronics
- Place of Presentation
  Hida Hotel Plaza,Takayama, Gifu
- Year and Date
  2015-08-26
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015
- Author(s)
  Kosuke Nagashio
- Organizer
  11th Topical workshop on Heterostructure Microelectronics
- Place of Presentation
  Hida Hotel Plaza, Takayama, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] グラフェンの電子デバイス応用へ向けた基礎知識～デバイス作製・電子輸送特性・ゲート絶縁膜・コンタクト抵抗～2015
- Author(s)
  長汐晃輔
- Organizer
  サイエンス&テクノロジーセミナー
- Place of Presentation
  きゅりあん(東京都品川区）
- Year and Date
  2015-04-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Bilayer graphene field-effect transistors2015
- Author(s)
  Kosuke Nagashio
- Organizer
  US/Japan Workshop on 2D Materials
- Place of Presentation
  Institute Technology, Ookayama, Tokyo
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] トランジスタを作る！グラフェン電界効果トランジスタ2015
- Author(s)
  長汐晃輔
- Organizer
  第5回CSJ化学フェスタ
- Place of Presentation
  タワーホール船堀（東京都江戸川区）
- Year and Date
  2015-10-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Graphene field effect transistor application2015
- Author(s)
  Kosuke Nagashio
- Organizer
  1st Japan-EU workshop on graphene and related 2D materials
- Place of Presentation
  Sapia tower, Tokyo, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Graphene field effect transistor2015
- Author(s)
  Kosuke Nagashio
- Organizer
  UTokyo-NTU joint conference at UTokyo 2015
- Place of Presentation
  Tokyo univ, Tokyo, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] FET応用の可能性2015
- Author(s)
  長汐晃輔
- Organizer
  ナノカーボンの技術開発動向に係るワークショップ
- Place of Presentation
  NEDO本部（神奈川県川崎市）
- Year and Date
  2015-06-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Graphene field effect transistor application2015
- Author(s)
  K. Nagashio
- Organizer
  1st Japan-EU workshop on graphene and related 2D materials
- Place of Presentation
  Sapia tower, Tokyo, Chiyoda
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Bilayer graphene field-effect transistors2015
- Author(s)
  Kosuke Nagashio
- Organizer
  US/Japan Workshop on 2D Materials
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2015-03-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Graphene field effect transistors2015
- Author(s)
  K. Nagashio
- Organizer
  UTokyo-NTU joint conference at UTokyo
- Place of Presentation
  Tokyo Institute of Technology, Ｔｏｋｙｏ, Meguro
- Year and Date
  2015-12-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015
- Author(s)
  Kosuke Nagashio
- Organizer
  NanoCarbon workshop of PKU-UTokyo
- Place of Presentation
  Tokyo, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] グラフェンの電子デバイス応用 -グラフェン・金属接合の理解と制御-2015
- Author(s)
  長汐晃輔
- Organizer
  第112回マイクロ接合研究委員会
- Place of Presentation
  阪大東京ブランチ（東京都中央区）
- Year and Date
  2015-11-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] semiconducting properties in bilayer graphene under the ultara-high displacement2014
- Author(s)
  K. Nagashio
- Organizer
  IEEE INEC2014
- Place of Presentation
  北海道大学(札幌市）
- Year and Date
  2014-07-29
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] 2層グラフェンの外部電界印加によるギャップ形成とギャップ内準位の評価2014
- Author(s)
  長汐晃輔
- Organizer
  学振専門委員会
- Place of Presentation
  東京大学（東京都文京区）
- Year and Date
  2014-06-10
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] グラフェンFETの実現へ向けて –コンダクタンス法によるギャップ内準位解析-2014
- Author(s)
  長汐晃輔
- Organizer
  第9回ATI合同研究会
- Place of Presentation
  東北大学東京分室（東京都千代田区）
- Year and Date
  2014-11-26
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement2014
- Author(s)
  K. Nagashio
- Organizer
  Japan-Korea Joint Symposium on Semiconductor Physics and Technology
- Place of Presentation
  国際会議場，北海道札幌市
- Year and Date
  2014-09-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014
- Author(s)
  K. Nagashio
- Organizer
  45th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Bahia Resort Hotel, SaDiego,USA
- Year and Date
  2014-12-05
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] semiconducting properties in bilayer graphene under the ultara-high displacement2014
- Author(s)
  K. Nagashio
- Organizer
  IEEE INEC2014
- Place of Presentation
  Sapporo
- Year and Date
  2014-07-29
- Invited
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Quantum capacitance measurement of bilayer graphene2014
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Organizer
  225rd ECS meeting
- Place of Presentation
  Orlando,USA
- Year and Date
  2014-05-12
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] 2層グラフェンにおけるギャップ内のキャリア応答と高キャリア密度下でのサブバンド散乱2014
- Author(s)
  長汐晃輔
- Organizer
  日本表面科学会第82回表面科学研究会
- Place of Presentation
  東工大(東京都目黒区）
- Year and Date
  2014-07-25
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014
- Author(s)
  K. Nagashio
- Organizer
  45th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, USA
- Year and Date
  2014-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement2014
- Author(s)
  K. Nagashio
- Organizer
  Japan-Korea Joint Symposium on Semiconductor Physics and Technology
- Place of Presentation
  北海道大学(札幌市）
- Year and Date
  2014-09-17
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Energy gap formation & gap states analysis in bilayer graphene2014
- Author(s)
  K. Nagashio
- Organizer
  Indo-Japan program on Graphene and related materials
- Place of Presentation
  JNCASR, Bangalore, India
- Year and Date
  2014-11-05
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] 電界印加による2層グラフェンのギャップ形成2014
- Author(s)
  長汐晃輔
- Organizer
  第78回半導体・集積回路技術シンポジウム
- Place of Presentation
  東京理科大学（東京都新宿区）
- Year and Date
  2014-07-17
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014
- Author(s)
  K. Nagashio
- Organizer
  45th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Bahia Resort Hotel, SaDiego
- Year and Date
  2014-12-05
- Invited
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Quantum capacitance measurement of bilayer graphene2014
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Organizer
  225rd ECS meeting
- Place of Presentation
  Orlando
- Year and Date
  2014-05-12
- Invited
- Data Source
  KAKENHI-PROJECT-26630121
[Presentation] Semiconducting properties in bilayer graphene under the ultara-high displacement2014
- Author(s)
  K. Nagashio
- Organizer
  IEEE INEC2014
- Place of Presentation
  北海道大学，北海道札幌市
- Year and Date
  2014-07-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] Quantum capacitance measurement of bilayer graphene2014
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Organizer
  225rd ECS meeting
- Place of Presentation
  Orlando, USA
- Year and Date
  2014-05-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-25107004
[Presentation] CH_4-CVD単層グラフェン成長におけるH_2流量効果2013
- Author(s)
  斉鈞雷, 長汐晃輔, 西村知紀, 鳥海明
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-24656456
[Presentation] レジストフリーコンタクト形成プロセスに基づくグラフェンの金属界面の理解2013
- Author(s)
  長汐晃輔, 井福亮太, 森山喬史, 西村知紀鳥海明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木市・神奈川工科大学
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Metal/Graphene contact2013
- Author(s)
  K. Nagashio
- Organizer
  4th A3 symp. on emerging materials
- Place of Presentation
  Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research2013
- Author(s)
  J. L. Qi, K. Nagashio, W. Liu, T. Nishimura and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-24656456
[Presentation] 金属と接触したグラフェンの量子容量測定による状態密度の抽出と結合機構の解明2013
- Author(s)
  井福亮太, 長汐晃輔, 西村知紀, 鳥海明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木市・神奈川工科大学
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Intrinsic graphene/metal contact2012
- Author(s)
  K. Nagashio, R. Ifuku, T. Morivama T Nishimura and A
- Organizer
  EEE International Electron Device Meeting
- Place of Presentation
  米国・サンフランシスコ(招待講演)
- Year and Date
  2012-12-10
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] 金属電極直下のグラフェンは本当にグラフェンか?2012
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  筑波大学プレ戦略イニシアティブ講演会
- Place of Presentation
  つくば市・筑波大学(招待講演)
- Year and Date
  2012-08-07
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] グラフェンデバイスにおける界面の理解と制御2012
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  第32回表面科学学術講演会シンポジウム講演
- Place of Presentation
  仙台市・東北大学(招待講演)
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Estimation of Metal-graphene Interaction Strength Through Quanium Capacitance Extraction of Graphene in Contact with Metal2012
- Author(s)
  T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  京都市・国際会議場
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Electrical transport properties of graphene in contact with Ni2012
- Author(s)
  T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
- Organizer
  MRS Spring Meeting
- Place of Presentation
  米国・サンフランシスコ
- Year and Date
  2012-04-10
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Estimaon of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal2012
- Author(s)
  R. Ifuku, K. Nagashio, T. Nishimura and A Toriumi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  京都市・国際会議場
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] グラフェン/SiO_2基板相互作用に対する理解と制御2011
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  第58回応用物理学会,神奈川(中止)
- Place of Presentation
  神奈川工科大
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラフェンFETの接合/界面に対する理解と制御2011
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  電子情報通信学会,電子デバイス研究会特別ワークショップ
- Place of Presentation
  東京,首都大学東京
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラフェンFETの接合/界面に対する理解と制御2011
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  電子情報通信学会,電子デバイス研究会特別ワークショップ
- Place of Presentation
  大阪,阪大
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Graphene devices2010
- Author(s)
  K.Nagashio, A.Toriumi
- Organizer
  International Mircoprocesses and Nanotechnology Conference
- Place of Presentation
  Fukuoka, Kokura, Japan
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Graphene/metal contact for graphene FET2010
- Author(s)
  K.Nagashio, A.Toriumi
- Organizer
  International symposium on Graphene Devices (ISGD 2010)
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Current crowding at metal contacts in graphene FETs2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  MRS spring meeting
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2010-04-07
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Graphene/metal contact for graphene FET2010
- Author(s)
  K.Nagashio, A.Toriumi
- Organizer
  International symposium on Graphene Devices
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-28
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラフェン/金属界面での電荷移動2010
- Author(s)
  長汐晃輔, 西村知紀, 喜多浩之, 鳥海明
- Organizer
  第57回応用物理学会
- Place of Presentation
  神奈川,東海大
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] DOS bottleneck for contact resistance in Graphene FETs2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] 金属/グラフェンコンタクトの基礎特性2010
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  真空・表面科学会合同講演会
- Place of Presentation
  大阪,阪大
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラフェンデバイス-実験技術の観点から-2010
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  International Mircoprocesses and Nanotechnology Conference (MNC 2010)
- Place of Presentation
  Fukuoka, Kokura
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] DOS bottleneck for contact resistance in Graphene FETs2010
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Importance of graphene/metal contact for high-performance graphene FET2009
- Author(s)
  K.Nagashio. T.Nishimura, K.Kita, A.Toriumi
- Organizer
  International microprocesses and nanotechnology conference
- Place of Presentation
  Hokkaido, JAPAN
- Year and Date
  2009-11-11
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラファイトからグラフェンへ-バンドオーバーラップ減少に伴う電子輸送特性の連続的変化-2009
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  応用物理学会応用電子物性分科会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Study of metal/graphene contact with different electrode geometry2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  Int.conf.on Solid State Devices and Materials
- Place of Presentation
  Sendai, JAPAN
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene-Analysis of Intrinsic Mobility and Contact Resistance-2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  IEEE International Electron Device Meeting
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Metal dependent contact properties for graphene-based FET2009
- Author(s)
  K.Nagashio. T.Nishimura, K.Kita, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference International
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-04
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Graphene/Cr間のコンタクト抵抗の数桁に及ぶバラツキ2009
- Author(s)
  長汐晃輔, 西村知紀, 喜多浩之, 鳥海明
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山,富山大
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] グラファイトから単層グラフェンまでの系統的な電子輸送特性評価2009
- Author(s)
  長汐晃輔, 鳥海明
- Organizer
  日本学術振興会,ワイドギャップ半導体光・電子デバイス第162委員会
- Place of Presentation
  静岡,熱海
- Data Source
  KAKENHI-PROJECT-21710136
[Presentation] Spherical crystallization of Si during free fall in drop-tube2008
- Author(s)
  K. Kuribayashi, K. Nagashio, M. Tajima
- Organizer
  The 4th Asian Conference on Crystal Growth and Crystal Technology, CGCT-4
- Place of Presentation
  Sendai, Japan.(invited presentation)
- Data Source
  KAKENHI-PROJECT-18206077
[Presentation] Spherical crystallization of Si during free fall in drop-tube (invited)2008
- Author(s)
  K. Kuribayashi, K. Nagashio, M. Tajima
- Organizer
  The 4th Asian Conference on Crystal Growth and Crystal Technology, CGCT-4
- Place of Presentation
  Tohoku University, Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18206077
[Presentation] High-speed IR imaging of a quenched interface of an undercooled droplet impinging on a silicon wafer2007
- Author(s)
  K. Nagashio, K. Kodaira, K. Kuribayashi, and T. Motegi
- Organizer
  5th Decennial international conference on solidification processing, 2007
- Place of Presentation
  Sheffield, UK
- Data Source
  KAKENHI-PROJECT-17686063
[Presentation] High-speed IR imaging of a quenched interface of an undercooled droplet impinging on a silicon wafer2007
- Author(s)
  K. Nagashio, K. Kodaira, K. Kuribayashi, T. Motegi
- Organizer
  SP^<07> Proceedings of the 5th Decennial International Conference on Solidification Processing
- Place of Presentation
  Sheffield
- Data Source
  KAKENHI-PROJECT-18206077
[Presentation] 基板上に落下させたY_3Al_5O_<12>液滴の扁平化及び凝固挙動のその場観察2007
- Author(s)
  長汐晃輔, 小平和弘, 栗林一彦, 茂木哲一
- Organizer
  85回溶射協会全国講演大会
- Place of Presentation
  大阪・大阪市
- Data Source
  KAKENHI-PROJECT-17686063
[Presentation] Rapid X-Ray diffractometry of a metastable phase during solidification from the undercooled YFeO_3 melt2007
- Author(s)
  K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, and Y. Katayama
- Organizer
  5th Decennial international conference on solidification processing, 2007
- Place of Presentation
  Sheffield, UK
- Data Source
  KAKENHI-PROJECT-17686063
[Presentation] Y_3Al_5O_<12>過冷却液滴の扁平化挙動への粘性の影響2007
- Author(s)
  長汐晃輔, 小平和弘, 栗林一彦, 茂木徹一
- Organizer
  141回金属学会秋季大会
- Place of Presentation
  岐阜,岐阜大
- Data Source
  KAKENHI-PROJECT-17686063
[Presentation] Growth Morphology of Si in Rapid Crystallization into Undercooled Melt2007
- Author(s)
  K.Kuribayashi & K.Nagashio
- Organizer
  Third International Symposium on Physical Sciences in Space(3rd lSPS 2007)
- Place of Presentation
  Nara, Japan
- Year and Date
  2007-10-23
- Data Source
  KAKENHI-PROJECT-18206077
[Presentation] Metastable phase formation from undercooled melt in containerless processing2006
- Author(s)
  K. Kuribayashi, K. Nagashio
- Organizer
  19^<th> General Meeting of the International Mineralogical Association, IMA2006
- Place of Presentation
  Kobe, Japan(invited presentation)
- Data Source
  KAKENHI-PROJECT-18206077
[Presentation] グラフェン/金属コンタクトの理解と制御
- Author(s)
  長汐晃輔
- Organizer
  グラフェンコンソーシアム第2回研究講演会
- Place of Presentation
  秋葉原，東京
- Invited
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
- Organizer
  IEEE International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D.C., USA
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Estimation of DOS in graphene in contact with metals by quantum capacitance measurment
- Author(s)
  K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi
- Organizer
  The 40th Int. Symp. on Compound Semiconductors
- Place of Presentation
  Kove convention center, Hyogo
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] DOS estimation of graphene in the contact structre by quantum capacitance measurment
- Author(s)
  K. Nagashio, R. Ifuku, T. Nishimura and A. Toriumi
- Organizer
  RPGR2013
- Place of Presentation
  Tokyo Tech Front, Tokyo
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research
- Author(s)
  J. L. Qi, K. Nagashio, W. Liu, T. Nishimura, and A. Toriumi
- Organizer
  2013 International conference on solid state devices and materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk
- Data Source
  KAKENHI-PROJECT-24656456
[Presentation] CH4-CVD単層グラフェン成長におけるH2流量効果
- Author(s)
  斉均雷，長汐晃輔，西村知紀，鳥海明
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24656456
[Presentation] Quantum capacitance measurements in monolayer & bilayer graphene
- Author(s)
  K. Nagashio, K. Kanayama, T. Nishimura and A. Toriumi
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto
- Data Source
  KAKENHI-PROJECT-24686039
[Presentation] Si集積化の限界を超える　–グラフェンFET実現へ向けて-
- Author(s)
  長汐晃輔
- Organizer
  SEMI FORUM
- Place of Presentation
  グランキューブ大阪，大阪
- Invited
- Data Source
  KAKENHI-PROJECT-24686039

1. KURIBAYASHI Kazuhiko (70092195)

# of Collaborated Projects: 6 results

# of Collaborated Products: 88 results
2. AGO HIROKI (10356355)

# of Collaborated Projects: 4 results

# of Collaborated Products: 9 results
3. 上野啓司 (40223482)

# of Collaborated Projects: 4 results

# of Collaborated Products: 2 results
4. 町田友樹 (00376633)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. 塚越一仁 (50322665)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. 越野幹人 (60361797)

# of Collaborated Projects: 3 results

# of Collaborated Products: 1 results
7. INATOMI Yuko (50249934)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. Saito Riichiro (00178518)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 長田俊人 (00192526)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. 依光英樹 (00372566)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. 楠美智子 (10134818)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. 若林克法 (50325156)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. 上野貢生 (00431346)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
14. 大野雄高 (10324451)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. 宮田耕充 (80547555)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
16. NOZAKI Kiyoshi (40415899)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
17. HIGUCHI Kensuke (10462897)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. WATANABE Kenji (20343840)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
19. YAMADA Takatoshi (30306500)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. Hibino Hiroki (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
21. 小澤俊平 (80404937)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 長谷川雅考 (20357776)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 坂本良太 (80453843)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
24. 水野清義 (60229705)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 櫻井英博 (00262147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. 西堀英治 (10293672)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 松田一成 (40311435)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
28. 岡田晋 (70302388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
29. 高村由起子 (90344720)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 松尾吉晃 (20275308)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. トンヴィンセント (50971628)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. NISHINA yuta

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. YANAGI kazuhiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. KAWANO yukio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
35. 広沢哲

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
36. SUEMITSU Tetsuya

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
37. TANIGUCHI Takashi

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
38. 丸山実那

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
39. 鳥海明

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
40. 西原寛

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
41. 末光眞希

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
42. 吹留博一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
43. Lin YungChang

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
44. 稲富祐光

# of Collaborated Projects: 0 results

# of Collaborated Products: 5 results
45. Fong CheeFai

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
46. NGAMPRAPAWAT SUPAWAN

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
47. 服部吉晃

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
48. Fang Nan

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Nagashio Kosuke 長汐 晃輔

NAGASHIO Kosuke 長汐 晃輔

Research Projects

Research Products

Co-Researchers

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Proposal of integratable two dimensional tunnel FET structure and demonstration of its ultra-low power operationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Integration of 2 dimensional tunnel FET for ultra-low power consumption systemPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Demonstration of piezoelectric properties of novel 2D materials toward energy harvestingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

2D tunnel FET based on understanding of 2D hetero interface characteristicsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Universal gate stack for 2D layered channelPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Direct growth of graphene on h-BN using the Cu vaporPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Improvement of current gain for graphene-base hot electron transistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Nagashio Kosuke 長汐晃輔

NAGASHIO Kosuke 長汐晃輔