• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Nagashio Kosuke  長汐 晃輔

… Alternative Names

NAGASHIO Kosuke  長汐 晃輔

Less
Researcher Number 20373441
Other IDs
  • ORCIDhttps://orcid.org/0000-0003-1181-8644
External Links
Affiliation (Current) 2022: 東京大学, 大学院工学系研究科(工学部), 教授
Affiliation (based on the past Project Information) *help 2020 – 2022: 東京大学, 大学院工学系研究科(工学部), 教授
2015 – 2019: 東京大学, 大学院工学系研究科(工学部), 准教授
2017: 東京大学, 大学院工学研究科, 教授
2012 – 2015: 東京大学, 工学(系)研究科(研究院), 准教授
2012: 東京大学, 大学院・工学系研究科, 准教授 … More
2007 – 2010: The University of Tokyo, 大学院・工学系研究科, 講師
2009: 独立行政法人 宇宙航空研究開発機構, 宇宙科学研究本部, 助手
2006: Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Assistant
2005: Institute of Space and Astronautical Science, Department of Space Biology and Microgravity Sciences, 宇宙科学研究本部宇宙環境利用学研究系, 助手
2005: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部宇宙環境利用科学研究系, 助手
2004 – 2005: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部・宇宙環境利用科学研究系, 助手 Less
Review Section/Research Field
Principal Investigator
Medium-sized Section 21:Electrical and electronic engineering and related fields / Material processing/treatments / Electronic materials/Electric materials / Microdevices/Nanodevices / Metal making engineering / Science and Engineering / Electron device/Electronic equipment / Metal making/Resorce production engineering / Broad Section D
Except Principal Investigator
Material processing/treatments … More / Physical properties of metals / Science and Engineering / Transformative Research Areas, Section (II) / Nanomaterials chemistry / Medium-sized Section 28:Nano/micro science and related fields Less
Keywords
Principal Investigator
2次元材料 / グラフェン / h-BN / 超低消費電力 / トンネルFET / 急速凝固 / トランジスタ / ゲート絶縁膜 / 移動度 / CVD … More / コンタクト抵抗 / 電界効果トランジスタ / 層状物質 / ALD / 過冷却 / 酸化物 / ペロブスカイト構造 / 準安定相 / ベロブスカイト構造 / メルトスピン / シリコン / 赤外カメラ / 冷却基板 / 熱伝達係数 / ナノ電子デバイス / グラフェン電界効果トランジスタ / 電界効果 / 単結晶 / 高移動度 / Cu / MICA / 状態密度 / コンタクト / 化学結合 / 物理吸着 / 輸送特性 / 原子層 / 複層化 / 結晶育成 / 結晶評価 / 原子層膜 / 散乱機構 / 複層化技術 / 服装界面相互作用 / トランスポート / 結晶成長 / 複層界面相互作用 / トップゲート / ホットエレクトロントランジスタ / バッファー層 / ホットエレクトロン / Y2O3 / 2次元層状材料 / 絶縁膜堆積 / high-kゲート / 2D材料 / 複合化 / 高誘電率 / high-k絶縁膜 / 絶縁破壊 / 2次元層状半導体 / ゲートスタック / ファンでアワールスヘテロ / 直接成長 / ヘテロ構造 / CVD成長 / 環境発電 / 圧電・強誘電 / SnS / 2次元強誘電体 / 強誘電特性 / 圧電 / トンネル現象 / 超低消費電力デバイス / トンネルトランジスタ / 2次元層状材料 / ヘテロ界面 / 低消費電力 / 2Dヘテロ界面 / MoS2 / WSe2 … More
Except Principal Investigator
グラフェン / 無容器プロセス / 原子層物質 / 遷移金属ダイカルコゲナイド / 準安定相 / ドロップチューブ法 / ドロップチューブ / 過冷凝固 / 相変態 / シリコン / 過冷融液 / 遷移金属カルコゲナイド / 複合原子層 / Nd-Fe-B / 二層グラフェン / インターカレーション / 2.5次元物質 / ナノコンポジット / Nd-Fe-B合 / Nd-Fe-B合金 / 球状Si結晶 / semi-solidプロセス / AlP / 溶解度積 / AIP / 球状結晶 / セミソリッド / 静電浮遊炉 / 電子・磁気物性 / 金属物性 / 過冷却液 / 磁性 / 物性実験 / 原子層超伝導 / グラフェンフラッグシップ / 量子デバイス / A3シンポジウム / CNT25 / 複合原子層物質 / NT15 / 気相化学合成 / 中間報告書 / 原子層 / 遷移金属カルコゲン物質 / ニアネットシェイプキャスティング / ニアネットシェイプ キャスティング / Containerless processing / Undercooling / Metastable phase / Near-net shape casting / Phase transformation / 熱伝導率 / Wiedemann-Franz則 / ゲルマニウム / 密度 / 拡散 / 電磁浮遊法 / 過冷却 / 半導体融液 / 電磁浮遊 / 熱物性 / 対流 / 静磁場 / undercooled melt / thermal conductivity / Wiedemann-Franz law / silicon / germanium / density / diffusion / electromagnetic levitation / 2次元物理 / 六方窒化ホウ素 / h-BN 資料提供 / 強磁場施設 / THz分光 / 角度分解光電子分光 / 有機合成 / THz分光 / バレートロニクス / h-BN / ナノシート / モアレ構造 / 量子ホール状態 / 電極材料 / SIC / 原子層分子 / ナノ材料 / マイクロ・ナノデバイス / 結晶成長 / 触媒・化学プロセス / マイクロ・ナノテバイス / 単層グラフェン / CVD / 電界効果トランジスタ / CVD成長 / 転写プロセス / トランジスタ / 転写技術 / 転写法 / ファンデルワールス制御 / 二次元ナノ空間 / 社会変革 / 二次元ヘテロ構造 / ファンデルワールス相互作用 / モアレ超格子 / 層間ナノ空間 / 界面・空間 / 電子デバイス / 光デバイス / エネルギーデバイス Less
  • Research Projects

    (24 results)
  • Research Products

    (448 results)
  • Co-Researchers

    (52 People)
  •  Proposal of integratable two dimensional tunnel FET structure and demonstration of its ultra-low power operationPrincipal Investigator

    • Principal Investigator
      長汐 晃輔
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      The University of Tokyo
  •  Integration of 2 dimensional tunnel FET for ultra-low power consumption systemPrincipal Investigator

    • Principal Investigator
      長汐 晃輔
    • Project Period (FY)
      2022 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section D
    • Research Institution
      The University of Tokyo
  •  General Management of Innovative Area of 2.5 Dimensional Materials Science

    • Principal Investigator
      吾郷 浩樹
    • Project Period (FY)
      2021 – 2025
    • Research Category
      Grant-in-Aid for Transformative Research Areas (A)
    • Review Section
      Transformative Research Areas, Section (II)
    • Research Institution
      Kyushu University
  •  Development of Electronic, Photonic, and Energy Applications with 2.5 Dimensional Structures

    • Principal Investigator
      上野 貢生
    • Project Period (FY)
      2021 – 2025
    • Research Category
      Grant-in-Aid for Transformative Research Areas (A)
    • Review Section
      Transformative Research Areas, Section (II)
    • Research Institution
      Hokkaido University
  •  Demonstration of piezoelectric properties of novel 2D materials toward energy harvestingPrincipal Investigator

    • Principal Investigator
      Nagashio Kosuke
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      The University of Tokyo
  •  2D tunnel FET based on understanding of 2D hetero interface characteristicsPrincipal Investigator

    • Principal Investigator
      Kosuke NAGASHIO
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      The University of Tokyo
  •  Tailor-made synthesis and future development of graphene

    • Principal Investigator
      AGO Hiroki
    • Project Period (FY)
      2018 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 28:Nano/micro science and related fields
    • Research Institution
      Kyushu University
  •  Universal gate stack for 2D layered channelPrincipal Investigator

    • Principal Investigator
      Nagashio Kosuke
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  Direct growth of graphene on h-BN using the Cu vaporPrincipal Investigator

    • Principal Investigator
      Nagashio Kosuke
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Metal making/Resorce production engineering
    • Research Institution
      The University of Tokyo
  •  International supports of atomic layered materials and promoting the collaborated research

    • Principal Investigator
      Saito Riichiro
    • Project Period (FY)
      2015 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Tohoku University
  •  Synthesis and device applications of AB-stacked bilayer graphene

    • Principal Investigator
      AGO HIROKI
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Nanomaterials chemistry
    • Research Institution
      Kyushu University
  •  Improvement of current gain for graphene-base hot electron transistorsPrincipal Investigator

    • Principal Investigator
      Nagashio Kosuke
    • Project Period (FY)
      2014 – 2015
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Promotion of Science Atomic layers

    • Principal Investigator
      Saito Riichiro
    • Project Period (FY)
      2013 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Tohoku University
  •  Understanding and device application of the hetero-atomic layersPrincipal Investigator

    • Principal Investigator
      NAGASHIO Kosuke
    • Project Period (FY)
      2013 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Improvement of mobility for CVD graphene by removing catalytic metalPrincipal Investigator

    • Principal Investigator
      NAGASHIO Kosuke
    • Project Period (FY)
      2012 – 2013
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Metal making engineering
    • Research Institution
      The University of Tokyo
  •  Current injection at the graphene/metal interface with the large difference in DOSsPrincipal Investigator

    • Principal Investigator
      NAGASHIO Kosuke
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Increase in off current of bilayer graphene by band gap engineering caused by external electrostatic fieldPrincipal Investigator

    • Principal Investigator
      NAGASHIO Kosuke
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Microdevices/Nanodevices
    • Research Institution
      The University of Tokyo
  •  Magnetic Property of Undercooled Co Alloy Melt

    • Principal Investigator
      INATOMI Yuko
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Physical properties of metals
    • Research Institution
      Japan Aerospace Exploration Agency
  •  赤外線カメラを用いたメルトスピンによる急速凝固過程の解明Principal Investigator

    • Principal Investigator
      長汐 晃輔
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      The University of Tokyo
      Japan Aerospace Exploration Agency
  •  Manufacturing Process of Axisymmetric Teardrop Crystal of Si for Solar-cell

    • Principal Investigator
      KURIBAYASHI Kazuhiko
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      Japan Aerospace Exploration Agency
  •  準安定相の生成・分解を利用したNd-Fe-Bナノコンポジット磁石の創成

    • Principal Investigator
      栗林 一彦
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Material processing/treatments
    • Research Institution
      Japan Aerospace Exploration Agency
  •  大過冷を利用した新しい非線形光学材料創成プロセスの提案Principal Investigator

    • Principal Investigator
      長汐 晃輔
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Material processing/treatments
    • Research Institution
      Japan Aerospace Exploration Agency
  •  Heat and Mass Transport in Undercooled Melts of Germanium and Silicon

    • Principal Investigator
      INATOMI Yuko
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Physical properties of metals
    • Research Institution
      Japan Aerospace Exploration Agency
  •  Near-net Shape Casting of Rare-earth Iron Magnet from Undercooled Melt

    • Principal Investigator
      KURIBAYASHI Kazuhiko
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Material processing/treatments
    • Research Institution
      Japan Aerospace Exploration Agency

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] 2 次元層状 SnS の面内強誘電性の実証2021

    • Author(s)
      東垂水直樹,長汐晃輔
    • Total Pages
      4
    • Publisher
      セラミックス,2021, 56, 447-450.
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 183-191.
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Book] "2次元層状ヘテロFETにおける界面特性制御",2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      8
    • Publisher
      応用物理, 2020, 89, 139-146.
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 33-41, ISBN:9784860436636
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      10
    • Publisher
      エヌ・ティー・エス, 東京,2020, pp. 251-260.
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] "2次元層状ヘテロFETにおける界面特性制御",2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      8
    • Publisher
      応用物理, 2020, 89, 139-146.
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      10
    • Publisher
      エヌ・ティー・エス, 東京,2020, pp. 251-260.
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 33-41
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 183-191. ISBN:9784860436636
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] ”hBNの絶縁性破壊強さの異方性とその起源”2019

    • Author(s)
      服部吉晃,長汐晃輔,
    • Total Pages
      5
    • Publisher
      NEW DIAMOND,2019, 35
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Book] ”hBNの絶縁性破壊強さの異方性とその起源”2019

    • Author(s)
      服部吉晃,長汐晃輔,
    • Total Pages
      5
    • Publisher
      NEW DIAMOND,2019, 35
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Book] 「グラフェンの伝導特性とエネルギーギャップ形成」, 二次元物質の科学 グラフェンなどの分子シートが生み出す新世界, 61-67,2017,日本化学会編 p61-67.2017

    • Author(s)
      長汐晃輔
    • Total Pages
      7
    • Publisher
      化学同人
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Book] "2次元層状チャネルFETの電子輸送特性"2017

    • Author(s)
      長汐晃輔
    • Total Pages
      6
    • Publisher
      応用電子物性分科会誌
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号,2017

    • Author(s)
      長汐晃輔
    • Publisher
      日本化学会編 化学同人
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Book] "2次元層状チャネルFETの電子輸送特性"2017

    • Author(s)
      長汐晃輔
    • Publisher
      応用電子物性分科会誌
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号, 日本化学会編2017

    • Author(s)
      長汐晃輔
    • Total Pages
      7
    • Publisher
      化学同人
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Book] 2D materials for nanoelectronics2016

    • Author(s)
      A. Toriumi, K. Nagashio
    • Publisher
      CRC Press
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Book] 「電界効果トランジスタにおけるゲートスタック形成と評価」カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔
    • Publisher
      エヌ・ティー・エス
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Book] 「Metal contacts to Graphene」 2D materials for nanoelectronics, edited by M.Houssa, A. Dimoulas, A. Molle2016

    • Author(s)
      Akira Toriumi, Koske Nagashio
    • Publisher
      CRC Press
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Book] "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔,
    • Publisher
      エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Book] , "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔
    • Publisher
      エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Book] 2D materials for nanoelectronics2016

    • Author(s)
      A. Toriumi, K. Nagashio
    • Publisher
      CRC Press
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Book] 「Graphene/metal contact」 in Frontiers of graphene and carbon nanotubes-Devices and applications2015

    • Author(s)
      K. Nagashio, A. Toriumi
    • Publisher
      Springer
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Book] Frontiers of graphene and carbon nanotubes2015

    • Author(s)
      K. Nagashio, A. Toriumi
    • Total Pages
      25
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Book] Frontiers of graphene and carbon nanotubes2015

    • Author(s)
      K. Nagashio, A. Toriumi
    • Total Pages
      25
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Book] グラフェンの最先端技術と拡がる応用2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Publisher
      フロンティア出版
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Book] グラフェンの機能と応用展望II2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Publisher
      フロンティア出版
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Book] グラフェン・イノベーション2011

    • Author(s)
      長汐晃輔, 鳥海明
    • Total Pages
      13
    • Publisher
      日経BP社,東京
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Book] Crystal growth of spherical Si, Crystal growth of Si forsolar cells(ed. by T. Fukuda)(in press)

    • Author(s)
      K. Nagashio, K. Kuribayashi
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation2022

    • Author(s)
      Ago Hiroki、Okada Susumu、Miyata Yasumitsu、Matsuda Kazunari、Koshino Mikito、Ueno Kosei、Nagashio Kosuke
    • Journal Title

      Science and Technology of Advanced Materials

      Volume: -

    • DOI

      10.1080/14686996.2022.2062576

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-ORGANIZER-21H05232, KAKENHI-PLANNED-21H05233, KAKENHI-PLANNED-21H05235, KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-18H03864, KAKENHI-PROJECT-21K18878
  • [Journal Article] Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices2021

    • Author(s)
      Chang Yih-Ren、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 13 Pages: 43282-43289

    • DOI

      10.1021/acsami.1c13279

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Journal Article] Identification of the position of piezoelectric polarization at the MoS<sub>2</sub>/metal interface2021

    • Author(s)
      Umeda Masaya、Higashitarumizu Naoki、Kitaura Ryo、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      Applied Physics Express

      Volume: 14 Pages: 125002-125002

    • DOI

      10.35848/1882-0786/ac3d1f

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-21H05237, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-20H02566, KAKENHI-PROJECT-21K18930
  • [Journal Article] Quantitative determination of contradictory bandgap values of bulk PdSe2 from electrical transport properties2021

    • Author(s)
      Nishiyama Wataru、Nishimura Tomonori、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Functional Materials

      Volume: 32 Pages: 2108061-2108061

    • DOI

      10.1002/adfm.202108061

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Journal Article] Intrinsic Electronic Transport Properties and Carrier Densities in PtS 2 and SnSe 2 : Exploration of n + ‐Source for 2D Tunnel FETs2021

    • Author(s)
      Sato Yuichiro、Nishimura Tomonori、Duanfei Dong、Ueno Keiji、Shinokita Keisuke、Matsuda Kazunari、Nagashio Kosuke
    • Journal Title

      Advanced Electronic Materials

      Volume: 7 Pages: 2100292-2100292

    • DOI

      10.1002/aelm.202100292

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K22142, KAKENHI-PROJECT-19H00755
  • [Journal Article] Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory2021

    • Author(s)
      Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      ACS Nano

      Volume: 15 Pages: 6658-6668

    • DOI

      10.1021/acsnano.0c10005

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Journal Article] Thickness-dependent Raman active modes of SnS thin films2021

    • Author(s)
      Yonemori Itsuki、Dutta Sudipta、Nagashio Kosuke、Wakabayashi Katsunori
    • Journal Title

      AIP Advances

      Volume: 11 Pages: 095106-095106

    • DOI

      10.1063/5.0062857

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-21H01019
  • [Journal Article] Quantum-mechanical effect in atomically thin MoS 2 FET2020

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      2D Materials

      Volume: 7 Pages: 014001-014001

    • DOI

      10.1088/2053-1583/ab42c0

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Purely in-plane ferroelectricity in monolayer SnS at room temperature2020

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Lee Chien-Ju、Lin Bo-Han、Chu Fu-Hsien、Yonemori Itsuki、Nishimura Tomonori、Wakabayashi Katsunori、Chang Wen-Hao、Nagashio Kosuke
    • Journal Title

      Nature communications

      Volume: 11 Pages: 2428-2428

    • DOI

      10.1038/s41467-020-16291-9

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-18H01154, KAKENHI-PROJECT-19J13579, KAKENHI-PROJECT-19K21956
  • [Journal Article] Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene2020

    • Author(s)
      Solis-Fernandez Pablo、Terao Yuri、Kawahara Kenji、Nishiyama Wataru、Uwanno Teerayut、Lin Yung-Chang、Yamamoto Keisuke、Nakashima Hiroshi、Nagashio Kosuke、Hibino Hiroki、Suenaga Kazu、Ago Hiroki
    • Journal Title

      ACS Nano

      Volume: 14 Pages: 6834-6844

    • DOI

      10.1021/acsnano.0c00645

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K14119, KAKENHI-PROJECT-16H06333, KAKENHI-PROJECT-18H03864, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19K22113
  • [Journal Article] Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS22020

    • Author(s)
      Maruyama Mina、Nagashio Kosuke、Okada Susumu
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 2 Pages: 1352-1357

    • DOI

      10.1021/acsaelm.0c00139

    • NAID

      120007127633

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01069, KAKENHI-PROJECT-20K05253, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Carrier Distribution Control in van der Waals Heterostructures of MoS2 and WS2 by Field-Induced Band-Edge Engineering2020

    • Author(s)
      Maruyama Mina、Nagashio Kosuke、Okada Susumu
    • Journal Title

      Physical Review Applied

      Volume: 14 Pages: 044028-044028

    • DOI

      10.1103/physrevapplied.14.044028

    • NAID

      120007132502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K05253, KAKENHI-PROJECT-20H05664, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Micrometer-scale monolayer SnS growth by physical vapor deposition2020

    • Author(s)
      Kawamoto H.、Higashitarumizu N.、Nagamura N.、Nakamura M.、Shimamura K.、Ohashi N.、Nagashio K.
    • Journal Title

      Nanoscale

      Volume: 12 Pages: 23274-23281

    • DOI

      10.1039/d0nr06022d

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19J13579, KAKENHI-PROJECT-19K21956
  • [Journal Article] All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality2020

    • Author(s)
      Nakamura Keigo、Nagamura Naoka、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 12 Pages: 51598-51606

    • DOI

      10.1021/acsami.0c13233

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Understanding interface properties in 2D heterostructure FETs2020

    • Author(s)
      Nagashio Kosuke
    • Journal Title

      Semiconductor Science and Technology

      Volume: 35 Pages: 103003-103003

    • DOI

      10.1088/1361-6641/aba287

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage2020

    • Author(s)
      Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      Small

      Volume: 16 Pages: 2004907-2004907

    • DOI

      10.1002/smll.202004907

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-19K21956
  • [Journal Article] Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics2020

    • Author(s)
      N. Fang, K. Otsuka, A. Ishii, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato
    • Journal Title

      ACS Photo

      Volume: 7 Pages: 1773-1779

    • DOI

      10.1021/acsphotonics.0c00406

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K15120, KAKENHI-PROJECT-20K15137, KAKENHI-PROJECT-19K23593, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-20H00354, KAKENHI-PROJECT-19J00894, KAKENHI-PROJECT-19K21956
  • [Journal Article] Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS22019

    • Author(s)
      Asakura Eito、Suzuki Masaki、Karube Shutaro、Nitta Junsaku、Nagashio Kosuke、Kohda Makoto
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 6 Pages: 063005-063005

    • DOI

      10.7567/1882-0786/ab21a8

    • NAID

      210000156025

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21956, KAKENHI-PLANNED-15H05854, KAKENHI-PROJECT-15H02099, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-15H05699
  • [Journal Article] Influence of interface dipole layers on the performance of graphene field effect transistors2019

    • Author(s)
      Nagamura Naoka、Fukidome Hirokazu、Nagashio Kosuke、Horiba Koji、Ide Takayuki、Funakubo Kazutoshi、Tashima Keiichiro、Toriumi Akira、Suemitsu Maki、Horn Karsten、Oshima Masaharu
    • Journal Title

      Carbon

      Volume: 152 Pages: 680-687

    • DOI

      10.1016/j.carbon.2019.06.038

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-16H06361, KAKENHI-PROJECT-19H00755, KAKENHI-PROJECT-18K19011, KAKENHI-PROJECT-19H02590
  • [Journal Article] Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices2019

    • Author(s)
      Li Weisheng、Zhou Jian、Cai Songhua、Yu Zhihao、Zhang Jialin、Fang Nan、Li Taotao、Wu Yun、Chen Tangsheng、Xie Xiaoyu、Ma Haibo、Yan Ke、Dai Ningxuan、Wu Xiangjin、Zhao Huijuan、Wang Zixuan、He Daowei、Pan Lijia、Shi Yi、Wang Peng、Chen Wei、Nagashio Kosuke、Duan Xiangfeng、Wang Xinran
    • Journal Title

      Nature Electronics

      Volume: 2 Pages: 563-571

    • DOI

      10.1038/s41928-019-0334-y

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
  • [Journal Article] Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue2019

    • Author(s)
      Matsuoka Ryota、Toyoda Ryojun、Shiotsuki Ryo、Fukui Naoya、Wada Keisuke、Maeda Hiroaki、Sakamoto Ryota、Sasaki Sono、Masunaga Hiroyasu、Nagashio Kosuke、Nishihara Hiroshi
    • Journal Title

      ACS Appl. Mater. Int.

      Volume: 10 Pages: 2730-2733

    • DOI

      10.1021/acsami.8b00743

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26708005, KAKENHI-PUBLICLY-16H00900, KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755, KAKENHI-PUBLICLY-17H05354, KAKENHI-PROJECT-26220801, KAKENHI-PROJECT-17H03028
  • [Journal Article] Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors2019

    • Author(s)
      Fang Nan、Toyoda Satoshi、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Functional Materials

      Volume: 29 Pages: 1904465-1904465

    • DOI

      10.1002/adfm.201904465

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
  • [Journal Article] Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes2019

    • Author(s)
      Toyoda Satoshi、Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 5 Pages: 055008-055008

    • DOI

      10.7567/1882-0786/ab176b

    • NAID

      210000155715

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21956, KAKENHI-PROJECT-19H00755
  • [Journal Article] Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation2018

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Nakamura Masaru、Shimamura Kiyoshi、Ohashi Naoki、Ueno Keiji、Nagashio Kosuke
    • Journal Title

      Nanoscale

      Volume: 10 Pages: 22474-22483

    • DOI

      10.1039/c8nr06390g

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Journal Article] Hydrogen-Assisted Epitaxial Growth of Monolayer Tungsten Disulfide and Seamless Grain Stitching2018

    • Author(s)
      Ji Hyun Goo、Lin Yung-Chang、Nagashio Kosuke、Maruyama Mina、Sol?s-Fern?ndez Pablo、Sukma Aji Adha、Panchal Vishal、Okada Susumu、Suenaga Kazu、Ago Hiroki
    • Journal Title

      Chemistry of Materials

      Volume: 30 Pages: 403-411

    • DOI

      10.1021/acs.chemmater.7b04149

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19036, KAKENHI-PUBLICLY-16H00917, KAKENHI-PROJECT-15H03530, KAKENHI-PROJECT-16H04343
  • [Journal Article] Type-II HfS<sub>2</sub>/MoS<sub>2</sub> Heterojunction Transistors2018

    • Author(s)
      Netsu Seiko、Kanazawa Toru、Uwanno Teerayut、Amemiya Tomohiro、Nagashio Kosuke、Miyamoto Yasuyuki
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E101-C Issue: 5 Pages: 338-342

    • DOI

      10.1587/transele.e101.c.338

      10.1587/transele.E101.C.338

    • NAID

      130006729710

    • ISSN
      0916-8524, 1745-1353
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-16H00905, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16H06082
  • [Journal Article] Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor2018

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 51 Pages: 065110-065110

    • DOI

      10.1088/1361-6463/aaa58c

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17J09690, KAKENHI-PROJECT-16H04343
  • [Journal Article] Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors2018

    • Author(s)
      Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Pages: 28780-28788

    • DOI

      10.1021/acsami.8b08959

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Journal Article] Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET2018

    • Author(s)
      Taniguchi Koki、Fang Nan、Nagashio Kosuke
    • Journal Title

      Applied Physics Letters

      Volume: 113 Pages: 133505-133505

    • DOI

      10.1063/1.5048099

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Journal Article] Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application2018

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Ueno Keiji、Nagashio Kosuke
    • Journal Title

      MRS Advances

      Volume: 3 Pages: 2809-2814

    • DOI

      10.1557/adv.2018.404

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Journal Article] Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule2018

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Pages: 32355-32364

    • DOI

      10.1021/acsami.8b10687

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-17J09690
  • [Journal Article] Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement2018

    • Author(s)
      Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Physical Review B

      Volume: 97

    • DOI

      10.1103/physrevb.97.045425

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K14656, KAKENHI-PROJECT-16H04343
  • [Journal Article] 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source2018

    • Author(s)
      He Junyang、Fang Nan、Nakamura Keigo、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Electronic Materials

      Volume: 4 Pages: 1800207-1800207

    • DOI

      10.1002/aelm.201800207

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Journal Article] Determination of Carrier Polarity in Fowler?Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface2018

    • Author(s)
      Hattori Yoshiaki、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Pages: 11732-11738

    • DOI

      10.1021/acsami.7b18454

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K14656, KAKENHI-PROJECT-16H04343
  • [Journal Article] Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance2017

    • Author(s)
      Nagashio Kosuke
    • Journal Title

      Journal of Materials Research

      Volume: 32 Pages: 64-72

    • DOI

      10.1557/jmr.2016.366

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343
  • [Journal Article] Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics2017

    • Author(s)
      N. Fang, K. Nagashio, and A. Toriumi
    • Journal Title

      2D mater

      Volume: 4 Pages: 015035-015035

    • DOI

      10.1088/2053-1583/aa50c4

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13941, KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
  • [Journal Article] Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface2017

    • Author(s)
      Ryota Matsuoka, *Ryota Sakamoto, Ken Hoshiko, Sono Sasaki, Hiroyasu Masunaga, Kosuke Nagashio, *Hiroshi Nishihara
    • Journal Title

      J. Am. Chem. Soc

      Volume: 139 Pages: 3145-3152

    • DOI

      10.1021/jacs.6b12776

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26220801, KAKENHI-PROJECT-14J09288, KAKENHI-PROJECT-26620039, KAKENHI-PUBLICLY-15H00862, KAKENHI-PROJECT-26708005, KAKENHI-PUBLICLY-16H00957, KAKENHI-PROJECT-16K14446, KAKENHI-PUBLICLY-16H00900, KAKENHI-PROJECT-16H04343
  • [Journal Article] ”Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition”,2017

    • Author(s)
      S. Kurabayashi, and K. Nagashio
    • Journal Title

      Nanoscale

      Volume: 9 Pages: 13264-13264

    • DOI

      10.1039/c7nr05385a

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
  • [Journal Article] Graphene field-effect transistor application -Electric band structure of graphene in transistor structure extracted from quantum capacitance-",2017

    • Author(s)
      K. Nagashio
    • Journal Title

      J. Mater. Res.

      Volume: 32 Pages: 64-64

    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Journal Article] (Invited) Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h -BN Insulator2017

    • Author(s)
      Nagashio Kosuke、Hattori Yoshiaki、Takahashi Nobuaki、Taniguchi Takashi、Watanabe Kenji、Bao Jianfeng、Norimatsu Wataru、Kusunoki Michiko
    • Journal Title

      ECS Transactions

      Volume: 79 Pages: 91-97

    • DOI

      10.1149/07901.0091ecst

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343
  • [Journal Article] Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator2017

    • Author(s)
      K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao
    • Journal Title

      ECS Transactions

      Volume: 79 Pages: 91-97

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Journal Article] Molecularly-Thin Anatase Field-Effect Transistors Fabricated through the Solid-State Transformation of Titania Nanosheets2017

    • Author(s)
      S. Sekizaki, M. Osada, K. Nagashio
    • Journal Title

      Nanoscale

      Volume: 9 Pages: 6471-6471

    • DOI

      10.1039/c7nr01305a

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-17H03395, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
  • [Journal Article] Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition2016

    • Author(s)
      N. Takahashi and K. Nagashio
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 12 Pages: 125101-125101

    • DOI

      10.7567/apex.9.125101

    • NAID

      210000138125

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
  • [Journal Article] Anisotropic breakdown strength of single crystal hexagonal Boron Nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio
    • Journal Title

      ACS appl. mater. interfaces

      Volume: 8 Pages: 27877-27877

    • DOI

      10.1021/acsami.6b06425

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
  • [Journal Article] Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio
    • Journal Title

      Appl. Phys. Lett

      Volume: 109 Pages: 253111-253111

    • DOI

      10.1063/1.4972555

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16K14446
  • [Journal Article] Subthreshold transport in mono- and multilayered MoS2 FETs2015

    • Author(s)
      N. Fang, K. Nagashio, and A. Toriumi
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 6 Pages: 065203-065203

    • DOI

      10.7567/apex.8.065203

    • NAID

      210000137562

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13941, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] Atomic layer deposition of Y2O3 on h-BN for a gate stack in FETs2015

    • Author(s)
      N. Takahashi, T. Taniguchi, K. Watanabe, and K. Nagashio
    • Journal Title

      Nanotechnology

      Volume: 26(17) Pages: 175708-175708

    • DOI

      10.1088/0957-4484/26/17/175708

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] Fully dry PMMA transfer of on h-BN using a heating/cooling system2015

    • Author(s)
      K. Kanayama, and K. Nagashio
    • Journal Title

      2D mater.

      Volume: 5 Pages: 041002-041002

    • DOI

      10.1038/srep15789

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system2015

    • Author(s)
      T. Uwanno, Y. Hattori, T Taniguchi, K Watanabe and K Nagashio
    • Journal Title

      2D mater.

      Volume: 2

    • DOI

      10.1088/2053-1583/2/4/041002

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Journal Article] Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride2015

    • Author(s)
      Y. Hattori, K. Watanabe, T. Taniguchi, and K. Nagashio
    • Journal Title

      ACS nano

      Volume: 9 Pages: 916-916

    • DOI

      10.1021/nn506645q

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26886003, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Journal Title

      ECS Trans

      Volume: 61 Pages: 75-75

    • DOI

      10.1149/06103.0075ecst

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
  • [Journal Article] Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica2014

    • Author(s)
      J. L. Qi, K. Nagashio, T. Nishimura, A. Toriumi
    • Journal Title

      Nanotechnology

      Volume: 25 Pages: 185602-185602

    • DOI

      10.1088/0957-4484/25/18/185602

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators2014

    • Author(s)
      K. Kanayama, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett

      Volume: 104 Pages: 083519-083519

    • DOI

      10.1063/1.4867202

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
  • [Journal Article] The crystal orientation relation and macroscopic surface roughness in heteroepitaxial graphene grown on Cu/mica2014

    • Author(s)
      J. L. Qi, K. Nagashio, T. Nishimura and A. Toriumi
    • Journal Title

      Nanotechnology

      Volume: 25 Pages: 185602-185602

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Journal Article] Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica2014

    • Author(s)
      J. L. Qi, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      nanotechnology

      Volume: na

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Journal Article] グラフェン/金属コンタクト形成に対する理解と制御2013

    • Author(s)
      長汐晃輔,鳥海明
    • Journal Title

      応用物理学会分科会シリコンテクノロジー

      Volume: 158 Pages: 18-21

    • Data Source
      KAKENHI-PROJECT-24686039
  • [Journal Article] Direct observation of charge transfer region at interfaces in graphene devicve2013

    • Author(s)
      Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, and Akira Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102 Pages: 241604-241604

    • DOI

      10.1063/1.4808083

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24686039
  • [Journal Article] The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity2013

    • Author(s)
      R.Ifuku, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 103 Pages: 033514-033514

    • DOI

      10.1063/1.4815990

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
  • [Journal Article] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement2013

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Journal Title

      IEDM Tech. Dig.

      Volume: na Pages: 503-503

    • DOI

      10.1109/iedm.2013.6724661

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
  • [Journal Article] Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement2013

    • Author(s)
      K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102 Pages: 173507-173507

    • DOI

      10.1063/1.4804430

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
  • [Journal Article] Carrier density modulation in graphene underneath the Ni electrode2013

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura, and A. Toriumi
    • Journal Title

      J. Appl. Phys.

      Volume: 114 Pages: 024503-024503

    • DOI

      10.1063/1.4813216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686039, KAKENHI-PLANNED-25107004
  • [Journal Article] 本質的なグラフェン/金属界面特性2013

    • Author(s)
      長汐晃輔,井福亮太,森山喬史,西村知紀,鳥海明
    • Journal Title

      応用物理学会分科会シリコンテクノロジー

      Volume: 154 Pages: 15-18

    • Data Source
      KAKENHI-PROJECT-24686039
  • [Journal Article] Intrinsic graphene/metal contact2012

    • Author(s)
      K. Nagashio, R. Ifuku, T. Moriyama, I. Nishimura and A Toriumi
    • Journal Title

      IEDM Tech. Dig.

      Pages: 68-71

    • NAID

      110009728053

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Journal Article] グラフェン/Si02基板相互作用に対する理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      表面科学

      Volume: 33 Pages: 552-556

    • DOI

      10.1380/jsssj.33.552

    • NAID

      130004486705

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Journal Article] グラフェンFETの界面に対する理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      電子情報通信学会誌

      Volume: 95 Pages: 284-284

    • NAID

      110009437459

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Journal Article] グラフェントランジスタの接合/界面に対する理解と制御2011

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      グラフェン・イノベーション,日経BP社

      Pages: 66-79

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] グラフェンナノエレクトロニクス素子の開発に向けて-素子シュミレーションと素子作成・物性評価-2010

    • Author(s)
      相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔
    • Journal Title

      固体物理 45

      Pages: 63-63

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Impact of graphene/SiO_2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films2010

    • Author(s)
      K.Nagashio, T.Yamashita, J.Fujita, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      IEEE International Electron Device Meeting (IEDM) Tech.Dig.

      Pages: 564-567

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Systematic investigation of intrinsic channel properties and contact resistance on mono- and multilayered graphene FET2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] グラフェンナノエレクトロニクス素子の開発に向けて-素子シュミレーションと素子作成・物性評価-2010

    • Author(s)
      相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔
    • Journal Title

      固体物理

      Volume: 45 Pages: 63-76

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Contact resistivity and current flow path at metal/graphene contact2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      Appl.Phys.Lett. 97

      Pages: 143514-143514

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Systematic investigation of intrinsic channel properties and contact resistance on mono-and multilayered graphene FET2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages: 51304-51304

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Impact of graphene/SiO_2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films2010

    • Author(s)
      K.Nagashio, T.Yamashita, J.Fujita, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      IEEE Int.Electron Device Meeting, Tech.Dig.

      Volume: 1 Pages: 564-567

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Contact resistivity and current flow path at metal/graphene contact2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      Appl.Phys.Lett.

      Volume: 97 Pages: 143514-143514

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene - Analysis of Intrinsic Mobility and Contact Resistance -2009

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      IEEE International Electron Device Meeting (IEDM) Tech.Dig.

      Pages: 565-568

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Spherical crystallization of Si during free fall in drop-tube2009

    • Author(s)
      K. Kuribayashi, K. Nagashio and M. Tajima
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 722-726

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Spherical crystallization of Si during free fall in drop-tube2009

    • Author(s)
      K. Kuribayashi, K. Nagashio, M. Tajima
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 722-726

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] グラファイトからグラフェンへ-バンドオーバーラップ減少に伴う電子輸送特性の連続的変化-2009

    • Author(s)
      長汐晃輔, 鳥海明
    • Journal Title

      応用電子物性分科会誌 15

      Pages: 120-125

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Mobility Variations in Mono-and Multi-Layer Graphene Films Appl.2009

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Journal Title

      Phys.Express 2

      Pages: 25003-25003

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Solidification behavior of intermetallic compound with strong crystallographic anisotropy2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      J. Jpn Soc. Microgravity Appl 25

      Pages: 583-586

    • NAID

      10024269052

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Metastable phase formation from undercooled melt of REFeO_3 (RE : Rareearth Element)2008

    • Author(s)
      K. Kuribayashi, K. Nagashio, K. Niwata, M. S. V. Kumar, T. Hibiya
    • Journal Title

      Review of Advanced Materials Science 18

      Pages: 444-447

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008

    • Author(s)
      長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 田島道夫
    • Journal Title

      まてりあ 47

      Pages: 147-153

    • NAID

      10021148978

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Orientation analysis of hexagonal dendrite formed from an undercooled melt of α-Fe_2Si_52008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Metallurgical and Materials Transactions A 39

      Pages: 135-141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] In-situ observation of solidification behaviour from undercooled α -Fe_2Si_5 melt using an electromagnetic levitator2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Review of Advanced Materials Science 18

      Pages: 439-443

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Microstructure formation and in situ phase identification from undercooled Co-61. 8 at. % Si melts solidified on an electromagnetic levitator and an electrostatic levitator2008

    • Author(s)
      M. Li, K. Nagashio, T. Ishikawa, A. Mizuno, M. Adachi, M. Watanabe, S. Yoda, K. Kuribayashi, Y. K atayama
    • Journal Title

      Acta Materialia 56

      Pages: 2514-2525

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Formation of hexagonal metastable phases from an undercooled LuFeO_3 melt in an atmosphere with low oxygen partial pressure2008

    • Author(s)
      M. S. Vijaya Kumar, K. Nagashio, T. Hibiya, K. Kuribayashi
    • Journal Title

      Journal of the American Ceramic Society 91

      Pages: 806-812

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Formation of Hexagonal Metastable phase from an undercooled LuFeO_3 melt in an atmosphere with low oxygen partial pressure2008

    • Author(s)
      M. S. Vijaya Kumar, K. Nagashio. T. Hibiya, and K. Kuribayashi
    • Journal Title

      J. Am. Ceram. Soc. 91

      Pages: 806-812

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Orientation analysis of hexagonal dendrite formed from undercooled melt of □-FeSi_22008

    • Author(s)
      K. Nozaki, K. Nagashio, and K. Kuribayashi
    • Journal Title

      Metal. Mater. Trans. A 39A

      Pages: 135-141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008

    • Author(s)
      長汐晃輔, 安藤等, 山崎智裕, 栗林一彦, 神保至, 田島道夫
    • Journal Title

      まてりあ : 日本金属学会会報 47

      Pages: 147-153

    • NAID

      10021148978

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Nucleation of cubic phase in deeply undercooled melt of anisotropic material2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Transaction of the Materials Research Society of Japan 33

      Pages: 385-388

    • NAID

      130007809441

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] In-situ observation of solidification behavior from undercooled α-Fe_2Si_5 melt using an electromagnetic levitator2008

    • Author(s)
      K. Nozaki, K. Nagashio, K. Kuribayashi
    • Journal Title

      Review of Advanced Materials Science 18

      Pages: 439-443

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] 低コスト・省資源を実現する太陽電池用Si球状結晶の育成2008

    • Author(s)
      長汐 晃輔, 安藤 等, 山崎 智裕, 栗林 一彦, 神保 至, 田島 道夫
    • Journal Title

      まてりあ 47

      Pages: 147-153

    • NAID

      10021148978

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Spreading and solidification of a highly undercooled Y_3Al_5O_<12> droplet impinging on a substrate2008

    • Author(s)
      K. Nagashio, K. Kodaira, K. Kuribayashi, T. Motegi
    • Journal Title

      International Journal of Heat and Mass Transfer 51

      Pages: 2455-2461

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007

    • Author(s)
      H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
    • Journal Title

      J. Jpn. Soc. Microgravity Appl. 24

      Pages: 3-8

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007

    • Author(s)
      K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
    • Journal Title

      J. Am. Ceram. Soc. 90

      Pages: 238-243

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007

    • Author(s)
      K. Kuribayashi, K. Nagashio, K. Niwata, M.S.V. Kumar, T. Hibiya
    • Journal Title

      Materials Science and Engineering A 448-451

      Pages: 675-679

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Density and thermal conductivity measurements for silicon melt by electromagnetic levitation under static magnetic field2007

    • Author(s)
      F. Onishi, Y. Inatomi, K. Nagashio, and K. Kuribayashi
    • Journal Title

      Int. J. Thermophysics 28

      Pages: 44-59

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Direct observation of the melt/substrate interface in melt spinning2007

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 1033-1035

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat2007

    • Author(s)
      K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
    • Journal Title

      J.Am.Ceram.Soc. 90

      Pages: 238-243

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Direct observation of the melt/substrate interface in melt spinning2007

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 1033-1035

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Direct observation of the melt/substrate interface in melt spinning2007

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Mater.Sci.Eng.A 449/451

      Pages: 1033-1035

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Dynamic process of dendrite fragmentation in solidification from undercooled Si melt using time-resolved x-ray diffraction2007

    • Author(s)
      K. Nagashio, K. Nozaki, K. Kuribayashi, Y. Katayama
    • Journal Title

      Applied Physics Letters 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007

    • Author(s)
      K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 675-679

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007

    • Author(s)
      K.Nagashio, K.Kuribayashi, O.Yamaguchi, T.Hibiya
    • Journal Title

      J. Am. Ceram. Soc. 90

      Pages: 238-243

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Rapid X-ray diffractometry on the metastable phase during solidification from the undercooled YFeO_3 melt2007

    • Author(s)
      K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, Y. Katayama
    • Journal Title

      Proceedings of the 5th Decennial international conference on solidification processing 2007

      Pages: 326-330

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007

    • Author(s)
      K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 675-679

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Dynamic process ofdendrite fragmentation in solidification from undercooled Simelt using time-resolved x-ray diffi-action2007

    • Author(s)
      K.Nagashio, K.nozaki & K.Kuribayashi
    • Journal Title

      Applied Physics Letters 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007

    • Author(s)
      M. Li, T. Ishikawa, K. Nagashio, K. Kuribayashi, S. Yoda
    • Journal Title

      Mater Sci. Eng. A 449-451

      Pages: 684-688

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Direct observation of the melt/substrate interface in melt spinning2007

    • Author(s)
      K. Nagashio and K. Kuribayashi
    • Journal Title

      Mater Sci. Eng. A 449-451

      Pages: 1033-1035

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007

    • Author(s)
      H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
    • Journal Title

      J.Jpn.Soc.Microgravity Appl. 24

      Pages: 3-8

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Microtexture formation of Ni_<99>Bi_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 684-688

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt2007

    • Author(s)
      K. Kuribayashi, K. Nagashio. K. Niwata, M. S. Vijaya Kumar, and T. Hibiya
    • Journal Title

      Mater Sci. Eng. A 449-451

      Pages: 675-679

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2007

    • Author(s)
      H.Okamoto, K.Nagashio, K.Kuribayashi, I.Jimbo
    • Journal Title

      J. Jpn. Soc. Microgravity Appl. 24

      Pages: 3-8

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based on the EBSP technique2007

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Mater. Sci. Eng. A 449/451

      Pages: 684-688

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Orientation analysis of hexagonal dendrite formed from an undercooled melt ofa-Fe_2Si_52007

    • Author(s)
      K.Nozaki, K.Nagashio & K.Kuribayashi
    • Journal Title

      Metallurgical and Materials Transactions A 39

      Pages: 135-141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Microtexture formation of Ni_<99>B_1 alloys solidified on an ESL and an EML-a study based onthe EBSP technique2007

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Mater.Sci.Eng.A 449/451

      Pages: 684-688

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] 金属間化合物のデンドライト成長メカニズム-結晶構造の異方性がもたらす多様性-2007

    • Author(s)
      野崎潔, 長汐晃輔, 栗林一彦
    • Journal Title

      日本結晶成長学会誌 34

      Pages: 29-36

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] The dynamic process of dendrite fragmentation in solidification from undercooled Si melt using time-resolved X-ray diffraction2007

    • Author(s)
      K. Nagashio. K. Nozaki, K. Kuribayashi, and Y. Katayama
    • Journal Title

      Int. J. Thermophysics 91

      Pages: 61916-61916

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] In-situ observation of formation of metastable rare-earth iron garnet by splat quenching2007

    • Author(s)
      K. Nagashio, K. Kuribayashi, O. Yamaguchi, and T. Hibiya
    • Journal Title

      J. Am. Ceram. Soc. 90

      Pages: 238-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled me2007

    • Author(s)
      K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
    • Journal Title

      Mater.Sci.Eng.A 449/451

      Pages: 675-679

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] High-speed imaging of quenched interface of an undercooled droplet impinging on a silicon wafer2007

    • Author(s)
      K. Nagashio. K. Kodaira, K. Kuribayashi and T. Motegi
    • Journal Title

      Proceedings of the 5th Decennial international conference on solidification processing 2007

      Pages: 297-300

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006

    • Author(s)
      長汐晃輔
    • Journal Title

      まてりあ 45

      Pages: 294-297

    • NAID

      10017413740

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>B_1 melts solidified on an electrostatic levitator ad an electromagnetic levitator2006

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Acta mater. 54

      Pages: 3791-3799

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006

    • Author(s)
      長汐晃輔
    • Journal Title

      まてりあ 45

      Pages: 294-297

    • NAID

      10017413740

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006

    • Author(s)
      K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
    • Journal Title

      J. Appl. Phys. 100

      Pages: 33524-33524

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta mater. 54

      Pages: 2353-2360

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>B_1 melts solidified on an electrostatic levitator and an electromagnetic levitator2006

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Acta mater. 54

      Pages: 3791-3799

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta mater. 54

      Pages: 2353-2360

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Seeing is believing -急冷凝固過程の可視化を目指して-2006

    • Author(s)
      長汐晃輔
    • Journal Title

      まてりあ 45

      Pages: 294-297

    • NAID

      10017413740

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006

    • Author(s)
      K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
    • Journal Title

      Appl.Phys.Lett. 89

      Pages: 241923-241923

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006

    • Author(s)
      K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
    • Journal Title

      Jpn. J. Appl. Phys. 45

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006

    • Author(s)
      M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
    • Journal Title

      J. Crystal Growth 294

      Pages: 16-21

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006

    • Author(s)
      L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
    • Journal Title

      J. Appl. Phys. 99

      Pages: 13512-13515

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊融液の密度測定2006

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      日本マイクログラビティ応用学会誌 23巻・1号

      Pages: 26-29

    • NAID

      10017253810

    • Data Source
      KAKENHI-PROJECT-16360320
  • [Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006

    • Author(s)
      K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
    • Journal Title

      Jpn.J.Appl.Phys. 45

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006

    • Author(s)
      K.Nagashio, K, Kuribayashi
    • Journal Title

      Acta materialia 54

      Pages: 2353-2360

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊液滴の密度測定2006

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      日本マイクログラビティ応用学会誌 23

      Pages: 26-29

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006

    • Author(s)
      K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 241923-241923

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] In-situ identification of the metastable phase during solidification from the undercooled YFeO_3 melt by fast X-ray diffractometry at 250 Hz2006

    • Author(s)
      K.Nagashio, K.Kuribayashi, M.S.Vijaya Kumar, K.Niwata, T.Hibiya, A.Mizuno, M.Watanabe, Y.Katayama
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 241923-241923

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta mater. 54

      Pages: 2353-2360

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006

    • Author(s)
      L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
    • Journal Title

      J.Appl.Phys. 99

      Pages: 13512-5

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006

    • Author(s)
      M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
    • Journal Title

      J.Crystal Growth 294

      Pages: 16-21

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] 重畳磁場電磁浮遊法を用いたシリコン浮遊液滴の密度測定2006

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      日本マイクログラビティ応用学会誌 23

      Pages: 26-29

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Spherical silicon crystal formed by semisolid process in drop tube2006

    • Author(s)
      K. Nagashio, H. Okamoto, H. Ando, K. Kuribayashi, I. Jimbo
    • Journal Title

      Japanese Journal of Applied Physics, Part 2: Letters 45

    • NAID

      10017653177

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Spherical Si crystal formed by semisolid process in drop tube2006

    • Author(s)
      K.Nagashio, H.Okamoto, H.Ando, K.Kuribayashi, I.Jimbo
    • Journal Title

      Jpn. J. Appl. Phys. 45

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning2006

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta Materialia 54

      Pages: 2353-2360

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Formation of metastable rare-earth iron garnet by splat quenching2006

    • Author(s)
      K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
    • Journal Title

      J. Am. Ceram. Soc. 89

      Pages: 1504-1509

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006

    • Author(s)
      K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
    • Journal Title

      J. Appl. Phys. 100

      Pages: 33524-33524

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] A comparative EBSP study of microstructure and microtexture formation from undercooled Ni_<99>Bi_1 melts solidified on an electrostatic levitator and an electromagnetic levitator2006

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Acta mater. 54

      Pages: 3791-3799

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Correlation of the electrical and optical properties of CdGeAs_22006

    • Author(s)
      L.Bai, C.Xu, N.C.Giles, K.Nagashio, R.S.Feigelson
    • Journal Title

      J. Appl. Phys. 99

      Pages: 13512-13515

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Measuring equipment for thermopysical properties of droplet electromagnetically-levitated under axial static magnetic field2006

    • Author(s)
      Fumitomo Onishi, Kosuke Nagashio, Yuko Inatomi, Kazuhiko Kuribayashi
    • Journal Title

      56th International Astronautical Congress Final Program

    • Data Source
      KAKENHI-PROJECT-16360320
  • [Journal Article] Formation of metastable rare-rarth iron garnet by splat quenching2006

    • Author(s)
      K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
    • Journal Title

      J.Am.Ceram.Soc. 89

      Pages: 1504-1509

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Structural change in silicon from undercooled liquid state to crystalline state during crystallization2006

    • Author(s)
      M.Watanabe, K.Higuchi, A.Mizuno, K.Nagashio, K.Kuribayashi, Y.Katayama
    • Journal Title

      J. Crystal Growth 294

      Pages: 16-21

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Real time X-ray observation of solidification from undercooled Si melt2006

    • Author(s)
      K.Nagashio, M.Adachi, K.Higuchi, A.Mizuno, M.Watanabe, K.Kuribayashi, Y.Katayama
    • Journal Title

      J.Appl.Phys. 100

      Pages: 33524-33524

    • Data Source
      KAKENHI-PROJECT-18206077
  • [Journal Article] Formation of metastable rare-earth iron garnet by splat quenching2006

    • Author(s)
      K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
    • Journal Title

      J. Am. Ceram. Soc. 89

      Pages: 1504-1509

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Fragmentation of faceted dendrite in solidification of undercooled B-doped Si melts2005

    • Author(s)
      K.Nagashio, H.Okamoto, K.Kuribayashi, I.Jimbo.
    • Journal Title

      Metallurgical and Materials Transaction A 36

      Pages: 3407-3413

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005

    • Author(s)
      Nagashio, K., Kuribayashi, K.
    • Journal Title

      Acta mater. 53

      Pages: 3021-3029

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2005

    • Author(s)
      Nagashio, K., Okamoto, H., Kuribayashi, K., Jinbo, I.
    • Journal Title

      Metall.Mater.Trans.A. 36A

      Pages: 3407-3413

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>Bl Melts Processed on an Electrostatic Levitator2005

    • Author(s)
      Li, M., Ishikawa, T., Nagashio, K., Kuribayashi, K.Yoda, S.
    • Journal Title

      Metall.Mater.Trans.A. 36A

      Pages: 3254-3257

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005

    • Author(s)
      Li, M., Nagashio, K., Ishikawa, T., Yoda, S., Kuribayashi, K.
    • Journal Title

      Acta mater. 53

      Pages: 731-741

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] 静磁場におけるSi浮遊融液の熱膨張率と熱伝導率の測定2005

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      日本金属学会講演概要

      Pages: 269-269

    • Data Source
      KAKENHI-PROJECT-16360320
  • [Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta materialia 53

      Pages: 3021-3029

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta materialia 53

      Pages: 3021-3029

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] 過冷融液からのファセットSiのデンドライト成長-球状単結晶育成へ向けて-2005

    • Author(s)
      長汐晃輔, 栗林一彦
    • Journal Title

      日本結晶成長学会誌 23

      Pages: 314-324

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005

    • Author(s)
      Li, M., Nagashio, K., Ishikawa, T., Yoda, S., Kuribayashi, K.
    • Journal Title

      Acta mater. 53

      Pages: 731-741

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Growth mechanism of twin-related and twin-free facet Si dendrites2005

    • Author(s)
      Nagashio, K., Kuribayashi, K.
    • Journal Title

      Acta mater. 53

      Pages: 3021-3029

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Fragmentation of facet dendrites in solidification of undercooled B-doped Si melt2005

    • Author(s)
      Nagashio, K., Okamoto, H., Kuribayashi, K., Jinbo, I.
    • Journal Title

      Metall.Mater.Trans.A. 36A

      Pages: 3407-3413

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] Fragmentation of faceted dendrite in solidification of undercooled B-doped Si melts2005

    • Author(s)
      K.Nagashio, H.Okamoto, K.Kuribayashi, I.Jimbo.
    • Journal Title

      Metallurgical and Materials Transaction A 36

      Pages: 3407-3413

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] シリコン浮遊融液の熱伝導率測定2005

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      日本熱物性シンポジウム講演論文集

      Pages: 475-477

    • Data Source
      KAKENHI-PROJECT-16360320
  • [Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_99B_1 Melts Processed on an Electrostatic Levitator2005

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Metallurgical and Materials Transaction A 36A

      Pages: 3254-3257

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>B_1 Melts Processed on an Electrostatic Levitator2005

    • Author(s)
      M.Li, T.Ishikawa, K.Nagashio, K.Kuribayashi, S.Yoda
    • Journal Title

      Metallurgical and Materials Transaction A 36A

      Pages: 3254-3257

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Microtexture and macrotexture formation in the containerless solidification of undercooled Ni-18.7 at% Sn eutectic melts2005

    • Author(s)
      M.Li, K Nagashio, T.Ishikawa, S.Yoda, K.Kuribayashi
    • Journal Title

      Acta Materialia 53

      Pages: 731-741

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Experimental evidence of crystal fragmentation from highly undercooled Ni_<99>B1 Melts Processed on an Electrostatic Levitator2005

    • Author(s)
      Li, M., Ishikawa, T., Nagashio, K., Kuribayashi, K.Yoda, S.
    • Journal Title

      Metall.Mater.Trans.A. 36A

      Pages: 3254-3257

    • Data Source
      KAKENHI-PROJECT-17686063
  • [Journal Article] 過冷融液からのファセットSiのデンドライト成長-球状単結晶育成へ向けて-2005

    • Author(s)
      長汐晃輔, 栗林一彦
    • Journal Title

      日本結晶成長学会誌 23

      Pages: 314-324

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004

    • Author(s)
      K.Nagashio, H.Murata, K.Kuribayashi
    • Journal Title

      Acta Materialia 52

      Pages: 5295-5301

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004

    • Author(s)
      Nagashio, K., Murata, H., Kuribayashi, K.
    • Journal Title

      Acta Mater. 52

      Pages: 5295-5301

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Phase selection in undercooled Y_3Al_5O_<12> melt2004

    • Author(s)
      Nagashio, K.Sasaki, J., Kuribayashi, K.
    • Journal Title

      Mater.Trans. 45

      Pages: 2723-2727

    • NAID

      10013474735

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] 静磁場における電磁浮遊融液のその場観察2004

    • Author(s)
      大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦
    • Journal Title

      第25回日本熱物性シンポジウム講演論文集

      Pages: 186-188

    • Data Source
      KAKENHI-PROJECT-16360320
  • [Journal Article] Correlation between dislocation etch pits and optical absorption in CdGeAs_22004

    • Author(s)
      Nagashio, K., et al.
    • Journal Title

      J.Crystal Growth 269

      Pages: 195-206

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Phase selection in undercooled Y_3AI_5O_12 melt2004

    • Author(s)
      K.Nagashio, J.Sasaki, K.Kuribayashi
    • Journal Title

      Materials Transaction 45

      Pages: 2723-2727

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melts2004

    • Author(s)
      M.Li, K.Nagashio, K.Kuribayashi
    • Journal Title

      Materials Science and Engineering A 373-377

      Pages: 528-533

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Fiber growth of near stoichiometric LiNbO_3 single crystal by laser heated pedestal growth method2004

    • Author(s)
      Nagashio, K., et al.
    • Journal Title

      J.Crystal Growth 265

      Pages: 190-197

    • Data Source
      KAKENHI-PROJECT-16656231
  • [Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melt2004

    • Author(s)
      M.Li, K.Nagashio, K.Kuribayashi
    • Journal Title

      Mat.Sci.Eng.A 375-377

      Pages: 528-533

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Spreading and solidification behavior of molten Si droplets impinging on substrates2004

    • Author(s)
      K.Nagashio, H, Murata, K.Kuribayashi
    • Journal Title

      Acta materialia 52

      Pages: 5295-5301

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Phase selection in undercooled Y_3Al_50_<12> melt2004

    • Author(s)
      K.Nagashio, J.Sasaki, K.Kuribayashi
    • Journal Title

      Materials Transactions 45

      Pages: 2723-2727

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Containerless solidification of undercooled oxide and metallic eutectic melt2004

    • Author(s)
      M.Li, K.Nagashio, K.Kuribayashi
    • Journal Title

      Mat. Sci. Eng. A 375-377

      Pages: 528-533

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Phase selection in undercooled Y_3Al_5O_<12> melt2004

    • Author(s)
      K.Nagashioa J.Sasaki, K.Kuribayashi
    • Journal Title

      Materials Transaction 45

      Pages: 2723-2727

    • NAID

      10013474735

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Containerless solidification of highly undercooled Al_20_3-ZrO_2 eutectic melts on an aero-acoustic levitator2003

    • Author(s)
      M.Li, K.Nagashio, K.Kuribayashi
    • Journal Title

      Crystal Growth 249

      Pages: 625-633

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Containerless solidification and net shaping by splat quenching of undercooled Nd_2Fe_14B melts2003

    • Author(s)
      K.Nagashio, M.Li, K.Kuribayashi.
    • Journal Title

      Materials Transaction 44

      Pages: 853-860

    • NAID

      10011911588

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Nucleation behaviour and anomalous eutectic formation in highly undercooled Fe_2O_3-La_2O_3 eutectic melts2003

    • Author(s)
      M.Li, K.Nagashio, K.Kuribayashi
    • Journal Title

      Philosophical Magazine 83

      Pages: 1095-1109

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Containerless solidification and net shaping by splat quenching of undercooled Nd_2Fe_<14>B melts2003

    • Author(s)
      K.Nagashio, M.Li, K.Kuribayashi
    • Journal Title

      Materials Transactions 44

      Pages: 853-860

    • NAID

      10011911588

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt spinning

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta materialia (in press)

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Formation of Metastable Rare-Earth Iron Garnet by Splat Quenching

    • Author(s)
      K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
    • Journal Title

      Journal of American Ceramic Society (in press)

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Experimental verification of ribbon formation process in chill-block melt Spinning

    • Author(s)
      K.Nagashio, K.Kuribayashi
    • Journal Title

      Acta materialia (in press)

    • Data Source
      KAKENHI-PROJECT-17656241
  • [Journal Article] Novel criterion for formation of metastable phase from undercooled melt

    • Author(s)
      K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
    • Journal Title

      Mat.Sci.Eng.A (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] DOS-limited contact resistance in graphene FETs

    • Author(s)
      K.Nagashio, A.Toriumi
    • Journal Title

      Jpn.J.Appl.Phys. in press.

    • Data Source
      KAKENHI-PROJECT-21710136
  • [Journal Article] Formation of Metastable Rare-Earth Iron Garnet by Splat Quenching

    • Author(s)
      K.Nagashio, O.Yamaguchi, T.Hibiya, K.Kuribayashi
    • Journal Title

      Journal of American Ceramic Society (in press)

    • Data Source
      KAKENHI-PROJECT-15206081
  • [Journal Article] Novel criterion for formation ofmetastable phase from undercooled melt

    • Author(s)
      K.Kuribayashi, K.Nagashio, K.Niwata, M.S.Vijaya Kumar, T.Hibiya
    • Journal Title

      Mat. Sci. Eng. A (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Patent] 球状シリコン単結晶の製造方法及び装置2008

    • Inventor(s)
      長汐晃輔, 栗林一彦, 岡本英樹
    • Industrial Property Rights Holder
      独立行政法人 宇宙航空研究開発機構
    • Acquisition Date
      2008-06-20
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Patent] 球状シリコン結晶の製造方法2008

    • Inventor(s)
      栗林一彦, 長汐晃輔, 安藤等
    • Industrial Property Rights Holder
      独立行政法人 宇宙航空研究開発機構
    • Industrial Property Number
      2008-021319
    • Filing Date
      2008-01-31
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Patent] 球状シリコン単結晶の製造方法及び装置2005

    • Inventor(s)
      長汐 晃輔, 栗林 一彦, 岡本 英樹
    • Industrial Property Rights Holder
      宇宙航空研究開発機構
    • Industrial Property Number
      2005-293807
    • Filing Date
      2005-10-06
    • Data Source
      KAKENHI-PROJECT-17656241
  • [Patent] 球状シリコン単結晶の 製造方法及び装置2005

    • Inventor(s)
      長汐晃輔, 栗林一彦, 岡本英樹
    • Industrial Property Rights Holder
      宇宙航空研究開発機構
    • Industrial Property Number
      2005-293807
    • Filing Date
      2005-10-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Patent] ガーネット組成物の製造方法2005

    • Inventor(s)
      長汐 晃輔, 栗林 一彦, 日比谷 孟俊, 山口 沖枝
    • Industrial Property Rights Holder
      独立行政法人宇宙航空研究開発機構
    • Industrial Property Number
      2005-090733
    • Filing Date
      2005-03-28
    • Data Source
      KAKENHI-PROJECT-16656231
  • [Patent] 球状シリコン単結晶の製造方法及び装置2005

    • Inventor(s)
      長汐 晃輔, 栗林 一彦, 岡本 英樹
    • Industrial Property Rights Holder
      宇宙航空研究開発機構
    • Industrial Property Number
      2005-293807
    • Filing Date
      2005-10-06
    • Data Source
      KAKENHI-PROJECT-15206081
  • [Presentation] 2D メモリデバイス超高速動作の物理的起源(講演奨励賞受賞講演)2022

    • Author(s)
      佐々木 太郎、上野 啓司、谷口 尚、渡邉 賢司、西村 知紀、長汐 晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] 1-nm EOTの実現に向けた高誘電率絶縁膜Er2O3を用いたトップゲート型2次元材料電界効果トランジスタの創製(注目講演)2022

    • Author(s)
      内山 晴貴、西村 知紀、長汐 晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] WSe2の p型動作に向けた Au/Bi薄膜の仕事関数変調効果2022

    • Author(s)
      中島 隆一、西村 知紀、上野 啓司、長汐 晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] 2次元層状物質の新機能デバイスへの展開2022

    • Author(s)
      長汐 晃輔
    • Organizer
      電子デバイス界面テクノロジー研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] Characterization of single-crystalline carbon-doped h-BN/metal contact for current injection2022

    • Author(s)
      Supawan Ngamprapawat、Tomonori Nishimura、Kenji Watanabe、Takashi Taniguchi、Kosuke Nagashio
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] 金属/Si界面のフェルミレベルピンニング機構の理解に向けた残渣フリーの大面積グラフェン転写2022

    • Author(s)
      西村 知紀、中島 隆一、張 益仁、内山 晴貴、長汐 晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] 光電流測定によるバルクPdSe2のバンドギャップ値評価と光応答機構の考察2022

    • Author(s)
      西山 航、西村 知紀、西岡 政雄、上野 啓司、岩本 敏、長汐 晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] ステップ端誘起スパイラル成長による空間反転対称性の破れたバルクSnS形成2022

    • Author(s)
      張 益仁、名苗 遼、篠北 啓介、松田 一成、長汐 晃輔
    • Organizer
      2022年第170回日本金属学会講演大会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] MoS2 FETから10年:何が解決して何が未解決なのか?2022

    • Author(s)
      長汐晃輔
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] グラフェン&2Dデバイスの現状と将来展望2022

    • Author(s)
      長汐 晃輔
    • Organizer
      システムデバイスロードマップ委員会2021年度第5回BC, MtM合同委員会
    • Invited
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] High temperature stability of MoS2 probed by combining thermal desorption spectroscopy and atomic layer deposition2022

    • Author(s)
      Li Shuhong、Tomonori Nishimura、Mina, Maruyama、Susumu Okada、Kosuke Nagashio
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-21H05237
  • [Presentation] "All 2D Heterostructure Tunnel Field Effect Transistors"2021

    • Author(s)
      K. Nagashio
    • Organizer
      5th IEEE Electron Devices Technology and Manufacturing conference 2021 (EDTM), (April, 9, 2021, Chengdu, China, Online). "
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "次元層状物質の新機能デバイスへの展開”2021

    • Author(s)
      長汐晃輔
    • Organizer
      グラフェンコンソーシアム第26回研究講演会,(2021年8月3日, オンライン開催).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Two-dimensional tunnel FET"2021

    • Author(s)
      K. Nagashio
    • Organizer
      International Conference on Materials and Systems for Sustainability (ICMaSS),(Nov. 5th, Online, 2021).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2D layered semiconductors: Challenge & Perspective"2021

    • Author(s)
      K. Nagashio
    • Organizer
      2021 International Symposium n VLSI Technology, System and Applications (VLSI-TSA), (April, 21, Hsinchu,Taiwan, Online).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] " Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of PVD SnS”2021

    • Author(s)
      Yih-Ren Chang, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio "
    • Organizer
      2021 virtual Materials Research Society (MRS) spring meeting, (April, 19, 2021, online).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "High performance SnS/h-BN heterostructure p-FET via Ti contact reaction"2021

    • Author(s)
      Yih-Ren Chang, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio "
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "50 ns Ultrafast P/E Operation in 2D Heterostructured Non-Volatile Memory Device"2021

    • Author(s)
      Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura,Kosuke Nagashio "
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Qualitative Judgement of Inconsistent Band Gap Values for Bulk PdSe2 from Electrical Transport Properties"2021

    • Author(s)
      Wataru Nishiyama, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "MoS2 同一結晶面内ヘテロを利用した単一ゲート TFET の動作実証"2021

    • Author(s)
      福井 智博, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐晃輔
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Current injection into single-crystalline carbon-doped h-BN",2021

    • Author(s)
      "Supawan Ngamprapawat, Takashi Taniguchi,Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月12日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "巨大シュタルク効果による2次元材料電界効果トランジスタの移動度変調"2021

    • Author(s)
      "内山 晴貴, 丸山 実那, 岡田 晋, 西村 知紀, 長汐晃輔 "
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Thermodynamics perspective to surface oxide amelioration in 2D devices",2021

    • Author(s)
      YihRen Chang, Tomonori Nishimura,Kosuke Nagashio
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "高速パルス電圧ストレス下におけるh-BNの強靭な絶縁破壊耐性による2Dメモリデバイスの超高速動作"2021

    • Author(s)
      佐々木 太郎, 上野 啓司, 谷口 尚, 渡邉 賢司, 西村 知紀, 長汐 晃輔
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催). "
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] ”2次元層状物質のデバイス応用の現状と将来展望”2021

    • Author(s)
      長汐晃輔
    • Organizer
      化学工学会エレクトロニクス部会 先端技術シンポジウム,(2021年12月7日, オンライン開催).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] Room temperature in-plane ferroelectricity in SnS2021

    • Author(s)
      K. Nagashio
    • Organizer
      International Microprocesses and Nanotechnology Conference (MNC2021),(Oct. 27th, Online, 2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] Polarity transition from n-type to p-type WS2 FET by controlling Schottky barrier2021

    • Author(s)
      R. Kato, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "バルクPdSe2 のバンドギャップ値に対する電気伝導特性からの定量的評価",2021

    • Author(s)
      西山 航, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔
    • Organizer
      2021年第82回応用物理学会秋季学術講演会, (2021年9月11日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] ”2次元電子デバイス”,2020

    • Author(s)
      長汐晃輔,
    • Organizer
      応用物理学会東海支部55周年記念講演,東海ニューフロンティアリサーチワークショップ,(2020年12月-1月,online on-demand).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "YSZ極薄膜の高温インピーダンス解析",2020

    • Author(s)
      西村 知紀, 小島 俊哉, 長汐 晃輔, 丹羽 正昭,
    • Organizer
      2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学(東京都千代田区)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Carrier Density of Apparently Degenerated PtS2 Determined by Hall Measurement",2020

    • Author(s)
      Yuichiro Sato, Keiji Ueno, Tomonori Nishimura, Kosuke Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2020, All-VIRTUAL conference).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Interface engineering for 2D laVirtual MRS Syered semiconductors",2020

    • Author(s)
      K. Nagashio,
    • Organizer
      2020 pring/Fall meeting, (Nov./Dec. 2020, online, USA).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] Atomic step induced spiral growth in PVD SnS,2020

    • Author(s)
      YihRen Chang, Naoki Higashitarumizu, Hayami Kawamoto, Tomonori Nishimura, Kosuke Nagashio,
    • Organizer
      2020年第81回応用物理学会秋季学術講演会, (2020年9月10日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Screw dislocation driven spiral growth in SnS initiated by atomic graphene steps",2020

    • Author(s)
      Yih-Ren Chang, Naoki Higashitarumizu, Hayami Kawamoto, Fu-Hsien Chu, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2020, All-VIRTUAL conference).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage",2020

    • Author(s)
      Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio,
    • Organizer
      International Conference on Solid State Devices and ypMaterials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] 浮遊ゲート電位(VFG)のトラジェクトリを用いた2Dメモリデバイスの動作理解,2020

    • Author(s)
      佐々木 太郎, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
    • Organizer
      2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] CVD-2層グラフェンのh-BNヘテロFET動作解析による結晶性評価,2020

    • Author(s)
      西山 航, Solis-Fernandez Pablo, 寺尾 友里, 河原 憲治, 吾郷 浩樹, 西村 知紀, 長汐 晃輔,
    • Organizer
      2020年第81回応用物理学会秋季学術講演会, (2020年9月9日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "p+-MoS2/n-MoS2 2D-TFETにおける60 mV/dec以下のS.S.実現",2020

    • Author(s)
      中村 圭吾, 永村 直佳, 上野 啓司, 谷口 尚, 渡邊 賢司, 長汐 晃輔,
    • Organizer
      2020年第67回応用物理学会春季学術講演会, (2020年3月13日, 上智大学(東京都千代田区)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Experimental Demonstration of In-Plane Ferroelectricity in SnS Down to Monolayer",2020

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B.-H. Lin, F.-H. Chu, I. Yonemori, T. Nishimura, K. Wakabayashi, W.-H. Chang, K. Nagashio,t.
    • Organizer
      2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] ”2次元電子デバイス”,2020

    • Author(s)
      長汐晃輔,
    • Organizer
      応用物理学会東海支部55周年記念講演,東海ニューフロンティアリサーチワークショップ,(2020年12月-1月,online on-demand).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Understanding the device operation of ambipolar channel based 2D memory devices by trajectory of floating gate voltage",2020

    • Author(s)
      T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio,
    • Organizer
      78th Device Research Conference, (June 23, 2020, Online).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "浮遊ゲート電位の測定による2Dメモリデバイス動作の理解",2020

    • Author(s)
      佐々木 太郎, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
    • Organizer
      2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学(東京都千代田区)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2次元材料の電子デバイス応用",2020

    • Author(s)
      長汐晃輔,
    • Organizer
      FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET",2020

    • Author(s)
      K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, Kosuke Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps",2020

    • Author(s)
      YihRen Chang, Hayami Kawamoto, Naoki Higashitarumizu, Tomonori Nishimura, Kosuke Nagashio,
    • Organizer
      2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学(東京都千代田区))
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] 完全2次元ヘテロTFETによる室温での60mV/dec以下のSS実現,2020

    • Author(s)
      中村 圭吾, 永村 直佳, 上野 啓司, 谷口 尚, 渡邊 賢司, 長汐 晃輔,
    • Organizer
      2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] 浮遊ゲート電位の測定による2DメモリデバイスのMemory window過大評価の理解,2020

    • Author(s)
      佐々木 太郎, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
    • Organizer
      2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] 完全AB積層した二層グラフェンのCVD成長2020

    • Author(s)
      P. Solis-Fernandez, 寺尾友里, 河原憲治,長汐晃輔, Y.-C. Lin, 山本圭介, 中島寛, 日比野浩樹, 末永和知, 吾郷浩樹
    • Organizer
      2020年 第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H03864
  • [Presentation] Isothermal growth and stacking evolution of highly uniform AB-stacked bilayer graphene2020

    • Author(s)
      P. Solis-Fernandez, Y. Terao, K. Kawahara, W. Nishiyama, T. Uwanno, Y.-C. Lin, K. Yamamoto,H. Nakashima, K. Nagashio, H. Hibino, K. Suenaga, H. Ago
    • Organizer
      第59回FNTG総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-18H03864
  • [Presentation] "層状マイカ基板上の 2 次元ピエゾ材料を用いたナノ発電素子",2020

    • Author(s)
      東垂水 直樹, 川元 颯巳, 梅田 雅也, 北浦 良, 長汐 晃輔,
    • Organizer
      [講演奨励賞受賞記念講演] 2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学(東京都千代田区)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Interface engineering for 2D layered semiconductors",2020

    • Author(s)
      K. Nagashio,
    • Organizer
      2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2次元材料の電子デバイス応用",2020

    • Author(s)
      長汐晃輔,
    • Organizer
      FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Ferroelectricity in monolayer SnS",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      JSPS/EPSRC C2C meeting, (Nov. 22, 2019, Tohoku univ., Sendai)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Full energy spectra of interface states density for n- and p-type MoS2 field effect transistors2019

    • Author(s)
      K. Nagashio,
    • Organizer
      Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "How to understand interface properties in 2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] Synthesis of AB-stacked bilayer graphene on Cu-Ni films2019

    • Author(s)
      P. Solis-Fernandez, Y. Terao, Y. Takesaki, K. Kawahara, K. Suenaga, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, H. Ago
    • Organizer
      九大2D物質研究会
    • Data Source
      KAKENHI-PROJECT-18H03864
  • [Presentation] "2次元層状トランジスタの界面の理解と制御",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      2019年電子情報通信学会シリコン材料・デバイス研究会 ,(2019年10月7日, 機械振興会館 (東京)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "All solid-state 2D tunnel FET",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      Compound semiconductor week 2019 (CSW2019), (May 19-23, 2019, Kasugano International Forum, Nara, Japan).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Understanding interface properties in 2D heterostructure FETs"2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "Understanding interface properties in 2D heterostructure FETs"2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Full energy spectra of interface states density for n and p-type MoS2 field effect transistors",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "Electromechanical Response of Few-to-monolayer SnS PVD-grown on Flexible Mica",2019

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Nagashio,
    • Organizer
      2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] ”2次元層状SnSの室温強誘電特性",2019

    • Author(s)
      東垂水 直樹, 川元 颯巳, 西村 知紀, 張 文豪, 長汐 晃輔",
    • Organizer
      2019年第80回応用物理学会秋季学術講演会,(2019年9月19日, 北海道大学(札幌市)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2D layered semiconductors",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "2D layered semiconductors",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "中心対称性の破れた2次元層状物質の圧電特性",2019

    • Author(s)
      東垂水 直樹, 川元 颯巳, 梅田 雅也, 北浦 良, 長汐 晃輔,
    • Organizer
      2019年第80回応用物理学会秋季学術講演会,(2019年9月19日, 北海道大学(札幌市)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "How to understand interface properties in 2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "2次元層状SnSの圧電・強誘電特性",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      第23回VBLシンポジウム ,(2019年10月6日, 名古屋大学 (愛知)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "2次元層状SnSの圧電・強誘電特性",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      第23回VBLシンポジウム ,(2019年10月6日, 名古屋大学 (愛知)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”,2019

    • Author(s)
      K. Nagashio, K. Taniguchi, and N. Fang,
    • Organizer
      Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "PVD growth of monolayer SnS under S-rich condition toward piezoelectric application",2019

    • Author(s)
      H. Kawamoto, N. Higashitarumizu, M. Nakamura, I. Yonemori, K. Wakabayashi, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor",2019

    • Author(s)
      Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio,
    • Organizer
      2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications",2019

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "2次元層状トランジスタの界面の理解と制御",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      2019年電子情報通信学会シリコン材料・デバイス研究会 ,(2019年10月7日, 機械振興会館 (東京)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K21956
  • [Presentation] "MoS2/h-BN/Graphite積層構造による不揮発性メモリデバイスの動作解析",2019

    • Author(s)
      佐々木 太郎, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
    • Organizer
      2019年第80回応用物理学会秋季学術講演会,(2019年9月20日, 北海道大学(札幌市)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”,2019

    • Author(s)
      T. Uwanno, T. Taniguchi, K. Watanabe, K. Nagashio,
    • Organizer
      Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "388 K High Temperature Retention Study of 2D Hetero-stack Based Non- Volatile Memory",2019

    • Author(s)
      T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "PtS2/WSe2によるp型2D-TFETにおけるBTBT電流の観測",2019

    • Author(s)
      佐藤 雄一朗,中村 圭吾,上野 啓司,長汐 晃輔,
    • Organizer
      2019年第80回応用物理学会秋季学術講演会,(2019年9月19日, 北海道大学(札幌市)).
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] "Band Alignment in Charge- Transfer-Type p+-WSe2/MoS2 Tunnel FET",2019

    • Author(s)
      K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00755
  • [Presentation] Selective growth of AB-stacked bilayer graphene2018

    • Author(s)
      寺尾友里,河原憲治, 末永健志朗, 山本圭介, 中島寛, 長汐晃輔, 日比野浩樹, 吾郷浩樹
    • Organizer
      第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03530
  • [Presentation] "Interface engineering for 2D layered semiconductors"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Interface engineering for 2D layered semiconductors2018

    • Author(s)
      K. Nagashio
    • Organizer
      UMRS-ICEM2018, (August, 23, 2018, Daejeon, Korea).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "High-k Er2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation",2018

    • Author(s)
      K. Maruyama, K. Nagashio.
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Interface Traps“Extrinsically” Deliver MIT in Monolayer MoS2 FET",2018

    • Author(s)
      N. Fang, K. Nagashio
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 12, 2018, Univ. of Tokyo, Tokyo)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Electrically inert interface in 2D heterostructure FETs"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      3rd Japan-EU flagship workshop on graphene and related 2D materials, (2018, Nov. 19, Sendai, Japan.)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Electrically Inert Interface in 2D Heterostructure FETs"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      Workshop on innovative nanoscale devices and systems (WINDS2018), (Nov. 28, 2018, The Westin Hapuna Beach Resort, Kohala, Hawaii, USA).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Understanding of layered heterointerfaces in 2D semiconductors"2018

    • Author(s)
      [Invited] K. Nagashio
    • Organizer
      10th anniversary international symposium on advanced Plasma science (ISPlamsa2018)、 (March, 5, 2018, Meijyo univ., Nagoya).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Purely AB-stacked bilayer graphene grown on Cu-Ni films2018

    • Author(s)
      P. Solis-Fernandez, Y. Terao, K. Kawahara, K. Suenaga, K. Yamamoto, H. Nakashima, K. Nagashio, H. Hibino, H. Ago
    • Organizer
      9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy and Environment
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H03864
  • [Presentation] "Interface engineerign for 2D electronics",2018

    • Author(s)
      K. Nagashio,
    • Organizer
      Core to core program, (April, 16-17, 2018, Cambridge university, UK).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Fabrication and Surface Engineering of Two-dimensional SnS toward Piezoelectric Nanogenerator Application"2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Ueno, K. Nagashio,
    • Organizer
      2018 MRS Spring Meeting, (April, 4, 2018, Phoenix Convention Center, Phoenix, USA).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Interface engineering for 2D layered semiconductors"2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Nagashio,
    • Organizer
      UTokyo-NTU joint conference at NUT 2018, (Dec. 12-13, 2018, NTU, Taiwan).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Pinpoint pick up and bubble free transfer in 2D heterostructure fabrication"2018

    • Author(s)
      K. Nagashio,
    • Organizer
      JSPS/EPSRC C2C meeting, (Oct. 30, 2018, Tohoku univ., Sendai).
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Electrically inert interface in 2D heterostructure FETs2018

    • Author(s)
      K. Nagashio
    • Organizer
      AWAD2018, (July, 3, 2018, Kitakyusyu, Japan).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET"2018

    • Author(s)
      S. Toyoda, T. Taniguchi, K.Watanabe, K. Nagashio.
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Strongp-type SnS FETs: From Bulk to Monolayer",2018

    • Author(s)
      N. Higashitarumizu, H. Kawamoto, K. Maruyama, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, K. Nagashio,
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM), (September. 13, 2018, Univ. of Tokyo, Tokyo)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] "Interface engineering for 2D electonics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 NEA Symposium of Emerging Materials Innovation, Lotte hotel, Soul, Korea
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] 2次元原子膜応用のためのゲートスタック形成2017

    • Author(s)
      長汐晃輔
    • Organizer
      2017真空・表面科学合同講演会 (2017年8月17日,横浜市立大,(横浜市))
    • Invited
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Interface engineering for 2D electonics2017

    • Author(s)
      K. Nagashio
    • Organizer
      Nippon-Taiwan Workshop
    • Place of Presentation
      Kwansei Gakuin Univ. Sanda, Hyogo
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] [Invited] "Gap engineering and reliability study for 2Delectronics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] "Gap engineering and reliability study for 2Delectronics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      6th Int. Conf. on Semiconductor Technology for ULSI & TFT, Schloss Hernstein, Hernstein, Austria
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Gap engineering and reliability study for 2Delectronics2017

    • Author(s)
      K. Nagashio
    • Organizer
      6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      応用電子物性分科会研究例会, 東工大,目黒区
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Interface engineering for 2D electronics2017

    • Author(s)
      K. Nagashio
    • Organizer
      Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] "Interface engineering for 2D layered semiconductors"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 PKU-UTokyo nano-carbon summer camp, Hongo, UTokyo
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] [12][招待講演] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      応用電子物性分科会研究例会, (2017年10月19日,東工大,(東京都目黒区)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] 2次元層状チャネルFETの電子輸送特性及び界面特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      応用電子物性分科会研究例会 (2017年10月19日,東工大,(東京都目黒区))
    • Invited
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] グラフェンの伝導特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学
    • Place of Presentation
      慶応大学, 神奈川
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Interface engineering for 2D layered semiconductors2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] "2次元原子膜応用のためのゲートスタック形成"2017

    • Author(s)
      長汐晃輔
    • Organizer
      [招待講演] 2017真空・表面科学合同講演会, (2017年8月17日,横浜市立大,(横浜市)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] 2次元原子層半導体における層状ヘテロ界面の理解と制御2017

    • Author(s)
      長汐晃輔
    • Organizer
      第36回電子材料シンポジウム, (2017年11月9日,長浜ロイヤルホテル,(滋賀県長浜市)).
    • Invited
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] グラフェンの伝導特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年3月16日, 慶応大学, 日吉, (神奈川)).
    • Invited
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] [Invited] "Interface engineering for 2D electonics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Understanding of layered heterointerfaces in 2D semiconductors2017

    • Author(s)
      K. Nagashio
    • Organizer
      10th anniversary international symposium on advanced Plasma science (ISPlamsa2018), (March, 5, 2018, Meijyo univ., Nagoya).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] 2次元原子層半導体における層状ヘテロ界面の理解と制御2017

    • Author(s)
      長汐晃輔
    • Organizer
      第36回電子材料シンポジウム,長浜ロイヤルホテル
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] グラフェンの伝導特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学
    • Place of Presentation
      慶応大学, 日吉, 神奈川
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] "2次元原子膜応用のためのゲートスタック形成"2017

    • Author(s)
      長汐晃輔
    • Organizer
      2017真空・表面科学合同講演会, 横浜市立大,横浜市
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] [Invited]"Interface engineering for 2D electonics".2017

    • Author(s)
      K. Nagashio,
    • Organizer
      Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] [招待講演] "グラフェンの伝導特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年3月16日, 慶応大学, 日吉, ( 神奈川)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Interface engineering for 2D electronics2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] [招待講演]2次元原子層半導体における層状ヘテロ界面の理解と制御,2017

    • Author(s)
      長汐晃輔
    • Organizer
      第36回電子材料シンポジウム, (2017年11月9日,長浜ロイヤルホテル,(滋賀県長浜市)).
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Interface engineering for 2D electonics2017

    • Author(s)
      K. Nagashio
    • Organizer
      Nippon-Taiwan Workshop
    • Place of Presentation
      Kwansei Gakuin Univ. Sanda, Hyogo
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] [Invited] "Interface engineering for 2D layered semiconductors"2017

    • Author(s)
      K. Nagashio,
    • Organizer
      2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Gap state analysis and reliability study on 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Cambridge university, UK
    • Year and Date
      2016-07-18
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      K. Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      K. Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Dielectric breakdown of hexiagonal boronitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      UTokyo-NTU joint conference at NUT 2016
    • Place of Presentation
      NTU, Taiwan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Gap state analysis and reliability study on 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Cambridge university,UK
    • Year and Date
      2016-07-18
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      GM-2016Graphene and related Materials: Properties and Applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Graphene transistor application2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Tohoku university, Sendai
    • Year and Date
      2016-11-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      International conference on graphene and related materials: properties and applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      Kosuke Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      International conference on graphene and related materials: properties and applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] prograGraphene transistor applicationm2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core
    • Place of Presentation
      Tohoku university, Sendai
    • Year and Date
      2016-11-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14446
  • [Presentation] Dielectric breakdown of hexiagonal boronitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      UTokyo-NTU joint conference at NUT 2016
    • Place of Presentation
      NTU, Taiwan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04343
  • [Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015

    • Author(s)
      K. Nagashio
    • Organizer
      11th Topical workshop on Heterostructure Microelectronics
    • Place of Presentation
      Hida Hotel Plaza,Takayama, Gifu
    • Year and Date
      2015-08-26
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      11th Topical workshop on Heterostructure Microelectronics
    • Place of Presentation
      Hida Hotel Plaza, Takayama, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] グラフェンの電子デバイス応用へ向けた基礎知識 ~デバイス作製・電子輸送特性・ゲート絶縁膜・コンタクト抵抗~2015

    • Author(s)
      長汐晃輔
    • Organizer
      サイエンス&テクノロジーセミナー
    • Place of Presentation
      きゅりあん(東京都品川区)
    • Year and Date
      2015-04-22
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Bilayer graphene field-effect transistors2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      US/Japan Workshop on 2D Materials
    • Place of Presentation
      Institute Technology, Ookayama, Tokyo
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] トランジスタを作る!グラフェン電界効果トランジスタ2015

    • Author(s)
      長汐晃輔
    • Organizer
      第5回CSJ化学フェスタ
    • Place of Presentation
      タワーホール船堀(東京都江戸川区)
    • Year and Date
      2015-10-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Graphene field effect transistor application2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      1st Japan-EU workshop on graphene and related 2D materials
    • Place of Presentation
      Sapia tower, Tokyo, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Graphene field effect transistor2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      UTokyo-NTU joint conference at UTokyo 2015
    • Place of Presentation
      Tokyo univ, Tokyo, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] FET応用の可能性2015

    • Author(s)
      長汐晃輔
    • Organizer
      ナノカーボンの技術開発動向に係るワークショップ
    • Place of Presentation
      NEDO本部(神奈川県川崎市)
    • Year and Date
      2015-06-17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Graphene field effect transistor application2015

    • Author(s)
      K. Nagashio
    • Organizer
      1st Japan-EU workshop on graphene and related 2D materials
    • Place of Presentation
      Sapia tower, Tokyo, Chiyoda
    • Year and Date
      2015-11-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Bilayer graphene field-effect transistors2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      US/Japan Workshop on 2D Materials
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2015-03-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Graphene field effect transistors2015

    • Author(s)
      K. Nagashio
    • Organizer
      UTokyo-NTU joint conference at UTokyo
    • Place of Presentation
      Tokyo Institute of Technology, Tokyo, Meguro
    • Year and Date
      2015-12-09
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Layer-by-layer dielectric breakdown of hexagonal Boron Nitride2015

    • Author(s)
      Kosuke Nagashio
    • Organizer
      NanoCarbon workshop of PKU-UTokyo
    • Place of Presentation
      Tokyo, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] グラフェンの電子デバイス応用 -グラフェン・金属接合の理解と制御-2015

    • Author(s)
      長汐晃輔
    • Organizer
      第112回マイクロ接合研究委員会
    • Place of Presentation
      阪大東京ブランチ(東京都中央区)
    • Year and Date
      2015-11-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] semiconducting properties in bilayer graphene under the ultara-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      IEEE INEC2014
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2014-07-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] 2層グラフェンの外部電界印加によるギャップ形成とギャップ内準位の評価2014

    • Author(s)
      長汐晃輔
    • Organizer
      学振専門委員会
    • Place of Presentation
      東京大学(東京都文京区)
    • Year and Date
      2014-06-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] グラフェンFETの実現へ向けて –コンダクタンス法によるギャップ内準位解析-2014

    • Author(s)
      長汐晃輔
    • Organizer
      第9回ATI合同研究会
    • Place of Presentation
      東北大学東京分室(東京都千代田区)
    • Year and Date
      2014-11-26
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      Japan-Korea Joint Symposium on Semiconductor Physics and Technology
    • Place of Presentation
      国際会議場,北海道札幌市
    • Year and Date
      2014-09-17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      45th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Bahia Resort Hotel, SaDiego,USA
    • Year and Date
      2014-12-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] semiconducting properties in bilayer graphene under the ultara-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      IEEE INEC2014
    • Place of Presentation
      Sapporo
    • Year and Date
      2014-07-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      225rd ECS meeting
    • Place of Presentation
      Orlando,USA
    • Year and Date
      2014-05-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] 2層グラフェンにおけるギャップ内のキャリア応答と高キャリア密度下でのサブバンド散乱2014

    • Author(s)
      長汐晃輔
    • Organizer
      日本表面科学会 第82回表面科学研究会
    • Place of Presentation
      東工大(東京都目黒区)
    • Year and Date
      2014-07-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      45th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2014-12-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Energy gap formation and gap states analysis in bilayer graphene under the ultra-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      Japan-Korea Joint Symposium on Semiconductor Physics and Technology
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2014-09-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Energy gap formation & gap states analysis in bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      Indo-Japan program on Graphene and related materials
    • Place of Presentation
      JNCASR, Bangalore, India
    • Year and Date
      2014-11-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] 電界印加による2層グラフェンのギャップ形成2014

    • Author(s)
      長汐晃輔
    • Organizer
      第78回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京理科大学(東京都新宿区)
    • Year and Date
      2014-07-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Carrier response in electric-field-induced bandgap of bilayer graphene2014

    • Author(s)
      K. Nagashio
    • Organizer
      45th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Bahia Resort Hotel, SaDiego
    • Year and Date
      2014-12-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      225rd ECS meeting
    • Place of Presentation
      Orlando
    • Year and Date
      2014-05-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-26630121
  • [Presentation] Semiconducting properties in bilayer graphene under the ultara-high displacement2014

    • Author(s)
      K. Nagashio
    • Organizer
      IEEE INEC2014
    • Place of Presentation
      北海道大学,北海道札幌市
    • Year and Date
      2014-07-30
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] Quantum capacitance measurement of bilayer graphene2014

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      225rd ECS meeting
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2014-05-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-25107004
  • [Presentation] CH_4-CVD単層グラフェン成長におけるH_2流量効果2013

    • Author(s)
      斉鈞雷, 長汐晃輔, 西村知紀, 鳥海明
    • Organizer
      2013年第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科
    • Year and Date
      2013-03-27
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Presentation] レジストフリーコンタクト形成プロセスに基づくグラフェンの金属界面の理解2013

    • Author(s)
      長汐晃輔, 井福亮太, 森山喬史, 西村知紀 鳥海明
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市・神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Metal/Graphene contact2013

    • Author(s)
      K. Nagashio
    • Organizer
      4th A3 symp. on emerging materials
    • Place of Presentation
      Jeju, Korea
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research2013

    • Author(s)
      J. L. Qi, K. Nagashio, W. Liu, T. Nishimura and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Year and Date
      2013-09-26
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Presentation] 金属と接触したグラフェンの量子容量測定による状態密度の抽出と結合機構の解明2013

    • Author(s)
      井福亮太, 長汐晃輔, 西村知紀, 鳥海明
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市・神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Intrinsic graphene/metal contact2012

    • Author(s)
      K. Nagashio, R. Ifuku, T. Morivama T Nishimura and A
    • Organizer
      EEE International Electron Device Meeting
    • Place of Presentation
      米国・サンフランシスコ(招待講演)
    • Year and Date
      2012-12-10
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] 金属電極直下のグラフェンは本当にグラフェンか?2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      筑波大学プレ戦略イニシアティブ講演会
    • Place of Presentation
      つくば市・筑波大学(招待講演)
    • Year and Date
      2012-08-07
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] グラフェンデバイスにおける界面の理解と制御2012

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      第32回表面科学学術講演会シンポジウム講演
    • Place of Presentation
      仙台市・東北大学(招待講演)
    • Year and Date
      2012-11-21
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Estimation of Metal-graphene Interaction Strength Through Quanium Capacitance Extraction of Graphene in Contact with Metal2012

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      京都市・国際会議場
    • Year and Date
      2012-09-26
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Electrical transport properties of graphene in contact with Ni2012

    • Author(s)
      T. Moriyama, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      米国・サンフランシスコ
    • Year and Date
      2012-04-10
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Estimaon of Metal-graphene Interaction Strength Through Quantum Capacitance Extraction of Graphene in Contact with Metal2012

    • Author(s)
      R. Ifuku, K. Nagashio, T. Nishimura and A Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      京都市・国際会議場
    • Year and Date
      2012-09-26
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] グラフェン/SiO_2基板相互作用に対する理解と制御2011

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      第58回応用物理学会,神奈川(中止)
    • Place of Presentation
      神奈川工科大
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラフェンFETの接合/界面に対する理解と制御2011

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      電子情報通信学会,電子デバイス研究会特別ワークショップ
    • Place of Presentation
      東京,首都大学東京
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラフェンFETの接合/界面に対する理解と制御2011

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      電子情報通信学会,電子デバイス研究会特別ワークショップ
    • Place of Presentation
      大阪,阪大
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Graphene devices2010

    • Author(s)
      K.Nagashio, A.Toriumi
    • Organizer
      International Mircoprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka, Kokura, Japan
    • Year and Date
      2010-11-08
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Graphene/metal contact for graphene FET2010

    • Author(s)
      K.Nagashio, A.Toriumi
    • Organizer
      International symposium on Graphene Devices (ISGD 2010)
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Current crowding at metal contacts in graphene FETs2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      MRS spring meeting
    • Place of Presentation
      San Francisco, CA, USA
    • Year and Date
      2010-04-07
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Graphene/metal contact for graphene FET2010

    • Author(s)
      K.Nagashio, A.Toriumi
    • Organizer
      International symposium on Graphene Devices
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2010-10-28
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラフェン/金属界面での電荷移動2010

    • Author(s)
      長汐晃輔, 西村知紀, 喜多浩之, 鳥海明
    • Organizer
      第57回応用物理学会
    • Place of Presentation
      神奈川,東海大
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] DOS bottleneck for contact resistance in Graphene FETs2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] 金属/グラフェンコンタクトの基礎特性2010

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      真空・表面科学会合同講演会
    • Place of Presentation
      大阪,阪大
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラフェンデバイス-実験技術の観点から-2010

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      International Mircoprocesses and Nanotechnology Conference (MNC 2010)
    • Place of Presentation
      Fukuoka, Kokura
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] DOS bottleneck for contact resistance in Graphene FETs2010

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Importance of graphene/metal contact for high-performance graphene FET2009

    • Author(s)
      K.Nagashio. T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      International microprocesses and nanotechnology conference
    • Place of Presentation
      Hokkaido, JAPAN
    • Year and Date
      2009-11-11
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラファイトからグラフェンへ-バンドオーバーラップ減少に伴う電子輸送特性の連続的変化-2009

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      応用物理学会応用電子物性分科会
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Study of metal/graphene contact with different electrode geometry2009

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      Int.conf.on Solid State Devices and Materials
    • Place of Presentation
      Sendai, JAPAN
    • Year and Date
      2009-10-09
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Metal/Graphene Contact as a Performance Killer of Ultra-high Mobility Graphene-Analysis of Intrinsic Mobility and Contact Resistance-2009

    • Author(s)
      K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      IEEE International Electron Device Meeting
    • Place of Presentation
      Baltimore, USA
    • Year and Date
      2009-12-09
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Metal dependent contact properties for graphene-based FET2009

    • Author(s)
      K.Nagashio. T.Nishimura, K.Kita, A.Toriumi
    • Organizer
      40th IEEE Semiconductor Interface Specialists Conference International
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2009-12-04
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Graphene/Cr間のコンタクト抵抗の数桁に及ぶバラツキ2009

    • Author(s)
      長汐晃輔, 西村知紀, 喜多浩之, 鳥海明
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山,富山大
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] グラファイトから単層グラフェンまでの系統的な電子輸送特性評価2009

    • Author(s)
      長汐晃輔, 鳥海明
    • Organizer
      日本学術振興会,ワイドギャップ半導体光・電子デバイス第162委員会
    • Place of Presentation
      静岡,熱海
    • Data Source
      KAKENHI-PROJECT-21710136
  • [Presentation] Spherical crystallization of Si during free fall in drop-tube2008

    • Author(s)
      K. Kuribayashi, K. Nagashio, M. Tajima
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology, CGCT-4
    • Place of Presentation
      Sendai, Japan.(invited presentation)
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Presentation] Spherical crystallization of Si during free fall in drop-tube (invited)2008

    • Author(s)
      K. Kuribayashi, K. Nagashio, M. Tajima
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology, CGCT-4
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Presentation] High-speed IR imaging of a quenched interface of an undercooled droplet impinging on a silicon wafer2007

    • Author(s)
      K. Nagashio, K. Kodaira, K. Kuribayashi, and T. Motegi
    • Organizer
      5th Decennial international conference on solidification processing, 2007
    • Place of Presentation
      Sheffield, UK
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Presentation] High-speed IR imaging of a quenched interface of an undercooled droplet impinging on a silicon wafer2007

    • Author(s)
      K. Nagashio, K. Kodaira, K. Kuribayashi, T. Motegi
    • Organizer
      SP^<07> Proceedings of the 5th Decennial International Conference on Solidification Processing
    • Place of Presentation
      Sheffield
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Presentation] 基板上に落下させたY_3Al_5O_<12>液滴の扁平化及び凝固挙動のその場観察2007

    • Author(s)
      長汐晃輔, 小平和弘, 栗林一彦, 茂木哲一
    • Organizer
      85回溶射協会全国講演大会
    • Place of Presentation
      大阪・大阪市
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Presentation] Rapid X-Ray diffractometry of a metastable phase during solidification from the undercooled YFeO_3 melt2007

    • Author(s)
      K. Nagashio, K. Kuribayashi, M. S. Vijaya Kumar, K. Niwata, T. Hibiya, A. Mizuno, M. Watanabe, and Y. Katayama
    • Organizer
      5th Decennial international conference on solidification processing, 2007
    • Place of Presentation
      Sheffield, UK
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Presentation] Y_3Al_5O_<12>過冷却液滴の扁平化挙動への粘性の影響2007

    • Author(s)
      長汐晃輔, 小平和弘, 栗林一彦, 茂木徹一
    • Organizer
      141回金属学会秋季大会
    • Place of Presentation
      岐阜,岐阜大
    • Data Source
      KAKENHI-PROJECT-17686063
  • [Presentation] Growth Morphology of Si in Rapid Crystallization into Undercooled Melt2007

    • Author(s)
      K.Kuribayashi & K.Nagashio
    • Organizer
      Third International Symposium on Physical Sciences in Space(3rd lSPS 2007)
    • Place of Presentation
      Nara, Japan
    • Year and Date
      2007-10-23
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Presentation] Metastable phase formation from undercooled melt in containerless processing2006

    • Author(s)
      K. Kuribayashi, K. Nagashio
    • Organizer
      19^<th> General Meeting of the International Mineralogical Association, IMA2006
    • Place of Presentation
      Kobe, Japan(invited presentation)
    • Data Source
      KAKENHI-PROJECT-18206077
  • [Presentation] グラフェン/金属コンタクトの理解と制御

    • Author(s)
      長汐晃輔
    • Organizer
      グラフェンコンソーシアム第2回研究講演会
    • Place of Presentation
      秋葉原,東京
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Carrier response in band gap and multiband transport in bilayer graphene under the ultra-high displacement

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi
    • Organizer
      IEEE International Electron Device Meeting (IEDM)
    • Place of Presentation
      Washington, D.C., USA
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Estimation of DOS in graphene in contact with metals by quantum capacitance measurment

    • Author(s)
      K. Nagashio, R. Ifuku, T. Nishimura, and A. Toriumi
    • Organizer
      The 40th Int. Symp. on Compound Semiconductors
    • Place of Presentation
      Kove convention center, Hyogo
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] DOS estimation of graphene in the contact structre by quantum capacitance measurment

    • Author(s)
      K. Nagashio, R. Ifuku, T. Nishimura and A. Toriumi
    • Organizer
      RPGR2013
    • Place of Presentation
      Tokyo Tech Front, Tokyo
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research

    • Author(s)
      J. L. Qi, K. Nagashio, W. Liu, T. Nishimura, and A. Toriumi
    • Organizer
      2013 International conference on solid state devices and materials (SSDM)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Presentation] CH4-CVD単層グラフェン成長におけるH2流量効果

    • Author(s)
      斉均雷,長汐晃輔,西村知紀,鳥海明
    • Organizer
      応用物理学会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24656456
  • [Presentation] Quantum capacitance measurements in monolayer & bilayer graphene

    • Author(s)
      K. Nagashio, K. Kanayama, T. Nishimura and A. Toriumi
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyoto
    • Data Source
      KAKENHI-PROJECT-24686039
  • [Presentation] Si集積化の限界を超える –グラフェンFET実現へ向けて-

    • Author(s)
      長汐晃輔
    • Organizer
      SEMI FORUM
    • Place of Presentation
      グランキューブ大阪,大阪
    • Invited
    • Data Source
      KAKENHI-PROJECT-24686039
  • 1.  KURIBAYASHI Kazuhiko (70092195)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 88 results
  • 2.  AGO HIROKI (10356355)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 9 results
  • 3.  上野 啓司 (40223482)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 4.  町田 友樹 (00376633)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 5.  塚越 一仁 (50322665)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  越野 幹人 (60361797)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 1 results
  • 7.  INATOMI Yuko (50249934)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  Saito Riichiro (00178518)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  長田 俊人 (00192526)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  依光 英樹 (00372566)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  楠 美智子 (10134818)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  若林 克法 (50325156)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 13.  宮田 耕充 (80547555)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 14.  上野 貢生 (00431346)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 5 results
  • 15.  大野 雄高 (10324451)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 16.  NOZAKI Kiyoshi (40415899)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 17.  HIGUCHI Kensuke (10462897)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  WATANABE Kenji (20343840)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 19.  YAMADA Takatoshi (30306500)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  Hibino Hiroki (60393740)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 21.  小澤 俊平 (80404937)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  長谷川 雅考 (20357776)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  坂本 良太 (80453843)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 24.  水野 清義 (60229705)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  岡田 晋 (70302388)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 26.  松田 一成 (40311435)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 27.  高村 由起子 (90344720)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  櫻井 英博 (00262147)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  西堀 英治 (10293672)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  松尾 吉晃 (20275308)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  NISHINA yuta
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 32.  YANAGI kazuhiro
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 33.  KAWANO yukio
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 34.  広沢 哲
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 35.  SUEMITSU Tetsuya
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 36.  SUENAGA Kazutomo
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 37.  KOHDA Makoto
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 38.  NITTA Junsaku
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 39.  KITAURA Ryo
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 40.  AMEMIYA Tomohiro
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 41.  TANIGUCHI Takashi
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 42.  鳥海 明
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 43.  西原 寛
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 44.  末光 眞希
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 45.  吹留 博一
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 46.  Lin YungChang
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 47.  稲富 祐光
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 5 results
  • 48.  宮本 恭幸
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 49.  服部 吉晃
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results
  • 50.  長田 実
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 51.  Fang Nan
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 52.  大塚 慶吾
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

URL: 

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi